WO2011117161A3 - Light sensor having a photosensitive semiconductor structure - Google Patents

Light sensor having a photosensitive semiconductor structure Download PDF

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Publication number
WO2011117161A3
WO2011117161A3 PCT/EP2011/054173 EP2011054173W WO2011117161A3 WO 2011117161 A3 WO2011117161 A3 WO 2011117161A3 EP 2011054173 W EP2011054173 W EP 2011054173W WO 2011117161 A3 WO2011117161 A3 WO 2011117161A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
substrate
light sensor
collector node
epitaxial layer
semiconductor structure
Prior art date
Application number
PCT/EP2011/054173
Other languages
German (de)
French (fr)
Other versions
WO2011117161A2 (en )
Inventor
Michael Franke
Lars Lehmann
Original Assignee
Iee International Electronics & Engineering S.A.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491Details of non-pulse systems
    • G01S7/4912Receivers
    • G01S7/4913Details of detection, sampling, integration or read-out circuits
    • G01S7/4914Details of detection, sampling, integration or read-out circuits of detector arrays
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infra-red, visible or ultraviolet radiation

Abstract

The invention relates to a light sensor comprising a photosensitive semiconductor structure having a slightly to highly doped semiconductor substrate (3) and an epitaxial semiconductor layer (2) applied thereto, comprising a weaker doping of the same type as the substrate (3), wherein a collector node in the form of a region (1) having greater doping of the same type again is disposed on the side of the epitaxial layer (2) facing away from the substrate, such that an electrical field running through the epitaxial layer (2) is formed by applying a voltage between the collector node and the substrate (3), said field drawing minority charge carriers generated by impinging light in the epitaxial layer (2) to the collector node.
PCT/EP2011/054173 2010-03-26 2011-03-21 Light sensor having a photosensitive semiconductor structure WO2011117161A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
LU91670 2010-03-26
LU91670 2010-03-26

Publications (2)

Publication Number Publication Date
WO2011117161A2 true WO2011117161A2 (en) 2011-09-29
WO2011117161A3 true true WO2011117161A3 (en) 2012-02-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/054173 WO2011117161A3 (en) 2010-03-26 2011-03-21 Light sensor having a photosensitive semiconductor structure

Country Status (1)

Country Link
WO (1) WO2011117161A3 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016123258B4 (en) 2016-12-01 2018-07-19 Leica Microsystems Cms Gmbh Lumineszenzdetektoranordnung, fluorescent microscope and method for detecting a luminescence signal

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134960A (en) * 1981-02-16 1982-08-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
EP1241710A2 (en) * 2001-03-15 2002-09-18 Philips Corporate Intellectual Property GmbH Light-sensitive semiconductor device
US20030076484A1 (en) * 2000-11-09 2003-04-24 Canesta, Inc. Systems for CMOS-compatible three-dimensional image sensing using quantum efficiency modulation
EP1513202A1 (en) * 2003-09-02 2005-03-09 Vrije Universiteit Brussel Detector for electromagnetic radiation assisted by majority current
US20060192938A1 (en) * 2003-02-03 2006-08-31 National University Corporation Shizuoka University Distance image sensor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19704496C2 (en) 1996-09-05 2001-02-15 Rudolf Schwarte Method and apparatus for determining an electromagnetic wave of the phase and / or amplitude information
EP1624490B1 (en) 2004-08-04 2018-10-03 Heptagon Micro Optics Pte. Ltd. Large-area pixel for use in an image sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134960A (en) * 1981-02-16 1982-08-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
US20030076484A1 (en) * 2000-11-09 2003-04-24 Canesta, Inc. Systems for CMOS-compatible three-dimensional image sensing using quantum efficiency modulation
EP1241710A2 (en) * 2001-03-15 2002-09-18 Philips Corporate Intellectual Property GmbH Light-sensitive semiconductor device
US20060192938A1 (en) * 2003-02-03 2006-08-31 National University Corporation Shizuoka University Distance image sensor
EP1513202A1 (en) * 2003-09-02 2005-03-09 Vrije Universiteit Brussel Detector for electromagnetic radiation assisted by majority current

Also Published As

Publication number Publication date Type
WO2011117161A2 (en) 2011-09-29 application

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