WO2011075967A1 - Enamel solar building wall panel - Google Patents

Enamel solar building wall panel Download PDF

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Publication number
WO2011075967A1
WO2011075967A1 PCT/CN2010/071090 CN2010071090W WO2011075967A1 WO 2011075967 A1 WO2011075967 A1 WO 2011075967A1 CN 2010071090 W CN2010071090 W CN 2010071090W WO 2011075967 A1 WO2011075967 A1 WO 2011075967A1
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WO
WIPO (PCT)
Prior art keywords
layer
enamel
substrate
wall panel
panel
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PCT/CN2010/071090
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French (fr)
Chinese (zh)
Inventor
谢跃武
梁明
Original Assignee
四会市维力有限公司
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Publication date
Priority to CN2009202655248U priority Critical patent/CN201635286U/en
Priority to CN200920265524.8 priority
Application filed by 四会市维力有限公司 filed Critical 四会市维力有限公司
Publication of WO2011075967A1 publication Critical patent/WO2011075967A1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00Supporting structures for PV modules
    • H02S20/20Supporting structures directly fixed to an immovable object
    • H02S20/22Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/26Building materials integrated with PV modules, e.g. façade elements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

An enamel solar building wall panel is provided. The structure of the wall panel is composed of an antireflection layer (1), an upper electrode layer (2), a transparent conducting layer (3), a buffer layer (4), an absorbing layer (5), a base electrode layer (6), a substrate (7), an adhesive layer (8) and a heat insulation and isolation layer (9) from the top to the bottom. The buffer layer is an n-type CdS film layer, the absorbing layer is a p-type CIGS film layer and the substrate is an enamel panel. Utilizing the enamel panel as the carrier of the solar battery, the wall panel according to the present invention has the strength of steel panel and the chemical stability of glass. The invention presents the advantages of easy production, low cost and convenience of assembling. Especially the product can be integrally fixed on the outer wall surface of a building in the method of fixing the enamel panel directly, so the sunlight can be received to generate electrical power and good decorative effect is presented. The invention enables the application of solar power generation technology on the outer wall of high buildings and expands the application field of solar power generation.

Description

搪瓷太阳能建筑墙板 技术领域  Enamel solar building wall panel
本实用新型涉及太阳能电池技术,特别是涉及一种可作为建筑外墙装饰板的 太阳能电池。  The utility model relates to a solar cell technology, in particular to a solar cell which can be used as a decorative wall for a building exterior wall.
背景技术 Background technique
太阳能电池是一种将光能转化成电能的装置, 目前比较成熟的工艺是将硅薄 膜太阳能电池沉积在玻璃或陶瓷基片上, 由于玻璃或陶瓷基体容易破碎, 还存在 对耐高温应变能力差的缺点,在玻璃或陶瓷基体上沉积制备硅薄膜难度大, 成本 高。 同时这些以玻璃或陶瓷为基体的太阳能电池难以直接安装在墙面, 影响其在 建筑物外墙上的推广应用。  A solar cell is a device for converting light energy into electrical energy. At present, a relatively mature process is to deposit a silicon thin film solar cell on a glass or ceramic substrate. Since the glass or ceramic substrate is easily broken, there is also a poor resistance to high temperature strain. Disadvantages, it is difficult and costly to deposit a silicon film on a glass or ceramic substrate. At the same time, these solar cells based on glass or ceramics are difficult to install directly on the wall, which affects their promotion and application on the external walls of buildings.
发明内容 Summary of the invention
本实用新型的目的是提出一种将太阳能电池技术与建筑装饰面板相结合,容 易加工制造和安装应用的搪瓷太阳能建筑墙板。  The purpose of the utility model is to provide an enamel solar building wallboard which combines solar cell technology with architectural decorative panels and is easy to process, manufacture and install.
实现上述目的的技术方案如下: 所提出的搪瓷太阳能建筑墙板, 包括减反射 层、 上电极层、 透明导电层、 底电极层和基板, 减反射层是最上层, 之下是上电 极层和透明导电层,基底的上面是底电极层, 其特征在于在透明导电层和底电极 层之间具有缓冲层和吸收层, 所述的缓冲层为 n型 CdS薄膜层, 所述的吸收层 为 p型 CIGS薄膜层, 所述的基板为搪瓷板, 该基板的下面通过粘胶层连接一层 保温隔离层。  The technical solution for achieving the above object is as follows: The proposed enamel solar building wall panel comprises an anti-reflection layer, an upper electrode layer, a transparent conductive layer, a bottom electrode layer and a substrate, wherein the anti-reflection layer is the uppermost layer, and the upper electrode layer is a transparent conductive layer, the upper surface of the substrate is a bottom electrode layer, characterized by having a buffer layer and an absorbing layer between the transparent conductive layer and the bottom electrode layer, wherein the buffer layer is an n-type CdS film layer, and the absorbing layer is The p-type CIGS film layer, the substrate is an enamel plate, and the underside of the substrate is connected with a thermal insulation layer through an adhesive layer.
本实用新型的制造方法是,在搪瓷基板的上面,由下而上依次沉积底电极层、 吸收层 (p型 CIGS薄膜层)、 缓冲层 (n型 CdS薄膜层)、 透明导电层、 上电极 层、减反射层, 形成薄膜太阳能电池, 再在搪瓷基板的底面通过粘胶层粘附一层 保温隔离层即形成本实用新型产品。  In the manufacturing method of the present invention, a bottom electrode layer, an absorption layer (p-type CIGS film layer), a buffer layer (n-type CdS film layer), a transparent conductive layer, and an upper electrode are sequentially deposited from the bottom to the top of the enamel substrate. The layer and the anti-reflection layer form a thin film solar cell, and then a layer of the thermal insulation layer is adhered on the bottom surface of the enamel substrate through the adhesive layer to form the product of the utility model.
所述的搪瓷板可为钢板搪瓷或铝搪瓷, 其厚度以 1.5〜2.5mm为宜。  The enamel plate may be a steel plate enamel or an aluminum enamel, and the thickness thereof is preferably 1.5 to 2.5 mm.
本实用新型进一步的技术方案是在所述的基板的底面四周设置安装连接件, 使本搪瓷太阳能建筑墙板可以很方便地安装固定在建筑物的外墙上。  A further technical solution of the present invention is to provide a mounting connector around the bottom surface of the substrate, so that the enamel solar building wall panel can be conveniently installed and fixed on the outer wall of the building.
本实用新型所提供的搪瓷太阳能建筑墙板利用搪瓷板面作为太阳能电池的 载体, 具有钢板的强度, 玻璃的化学稳定性, 产品容易加工制造, 成本低, 方便 安装, 特别是产品整体可以直接按搪瓷面板的安装方式固定在建筑物的外墙面, 既能接收太阳光发电, 又具有很好的装饰效果, 使太阳能发电技术在高大建筑物 的外墙上应用成为现实, 大大地扩大了太阳能发电的应用领域。 The enamel solar building wall panel provided by the utility model uses the enamel board surface as the carrier of the solar battery, has the strength of the steel plate, the chemical stability of the glass, the product is easy to process and manufacture, and the cost is low and convenient. Installation, especially the product as a whole can be fixed directly on the outer wall surface of the building according to the installation method of the enamel panel, which can receive solar power and have a good decorative effect, so that the solar power generation technology is on the outer wall of the tall building. The application has become a reality, greatly expanding the application field of solar power generation.
附图说明 DRAWINGS
图 1是本实用新型的结构示意图;  Figure 1 is a schematic view of the structure of the present invention;
图 2是本实用新型的整体外观视图;  Figure 2 is an overall appearance view of the utility model;
图 3是图 2的 A-A向剖视图。  Fig. 3 is a cross-sectional view taken along line A-A of Fig. 2;
具体实施方式 detailed description
以下结合附图对本实用新型的结构细节做进一步的详细说明。  The structural details of the present invention will be further described in detail below with reference to the accompanying drawings.
实施例一  Embodiment 1
如图一所示, 本搪瓷太阳能建筑墙板自上至下由减反射层 1、 上电极层 2、 透明导电层 3、 缓冲层 4、 吸收层 5、 底电极层 6、 基板 7, 粘胶层 8和保温隔离 层 9构成。 减反射层 1为 ^1§?2材料层, 上电极层 2为 Ni/Al材料层, 透明导电 层 3为 Zn及 A1材料层, 缓冲层 4为 n型 CdS薄膜层, 吸收层 5为 p型 CIGS 薄膜层, 底电极层 6为 Cu-Mo材料层, 基板 7为钢板搪瓷外墙板, 由底釉层、 面釉层和钢板基体构成,保温隔离层 9通过粘胶层 8粘附在基板 Ί的底面。本搪 瓷太阳能建筑墙板的整体外形如图 2、 图 3所示, 搪瓷太阳能建筑墙板呈矩形, 其钢板搪瓷基板的厚度为 1. 5mm, 在上面 (面釉层上) 由下而上依次沉积底电极 层、 吸收层 (p型 CIGS薄膜层)、 缓冲层 (n型 CdS薄膜层)、 透明导电层、 上 电极层、 减反射层, 形成薄膜太阳能电池 T, 在基板 7的底面 (即钢板搪瓷外墙 板的底釉层面上)通过粘胶层粘附一层保温隔离层 9, 在该基板的底面四周设有 8块安装连接件 10, 每块安装连接件上具有安装孔 11, 方便本搪瓷太阳能建筑 墙板在建筑物外墙的安装使用。 As shown in FIG. 1, the enamel solar building wall panel is composed of an anti-reflection layer 1, an upper electrode layer 2, a transparent conductive layer 3, a buffer layer 4, an absorbing layer 5, a bottom electrode layer 6, and a substrate 7, from top to bottom. The layer 8 and the insulating barrier layer 9 are formed. The anti-reflection layer 1 is a material layer of ^1 § 2 , the upper electrode layer 2 is a Ni/Al material layer, the transparent conductive layer 3 is a Zn and A1 material layer, the buffer layer 4 is an n-type CdS film layer, and the absorption layer 5 is a p layer. The CIGS film layer, the bottom electrode layer 6 is a Cu-Mo material layer, and the substrate 7 is a steel plate enamel outer wall plate, which is composed of a bottom glaze layer, a surface glaze layer and a steel plate substrate, and the heat insulating isolation layer 9 is adhered through the adhesive layer 8 The bottom surface of the substrate. The overall shape of the enamel solar building wall panel is shown in Fig. 2 and Fig. 3, the enamel solar building wall panel is rectangular, and the thickness of the steel enamel substrate is 1. 5 mm, on the top (on the glaze layer) from bottom to top. Depositing a bottom electrode layer, an absorbing layer (p-type CIGS film layer), a buffer layer (n-type CdS film layer), a transparent conductive layer, an upper electrode layer, and an anti-reflection layer to form a thin film solar cell T on the bottom surface of the substrate 7 (ie, On the bottom glaze layer of the steel plate enamel outer wall panel, a layer of insulating insulation layer 9 is adhered through the adhesive layer, and eight mounting connectors 10 are arranged around the bottom surface of the substrate, and each mounting connector has a mounting hole 11 therein. Facilitate the installation and use of this enamel solar building wall panel in the exterior wall of the building.
实施例二  Embodiment 2
本搪瓷太阳能建筑墙板实施例采用 2. 5mm厚度的铝搪瓷作为基板 7, 所述的铝 搪瓷由底釉层、铝板基体和面釉层构成, 在其面釉层上由下而上依次沉积底电极 层 6、 吸收层 5 (p型 CIGS薄膜层)、 缓冲层 4 ( n型 CdS薄膜层)、 透明导电层 3、 上电极层 2、 减反射层 1, 形成薄膜太阳能电池, 在所述的基板 7的底面通过 粘胶层 8粘附一层保温隔离层 9, 其基本结构和制造方法与实施例一基本相同。  The enamel solar building wall panel embodiment adopts an aluminum enamel having a thickness of 2.5 mm as the substrate 7, and the aluminum enamel is composed of a bottom glaze layer, an aluminum plate base body and a surface glaze layer, and is deposited on the surface glaze layer from bottom to top. a bottom electrode layer 6, an absorbing layer 5 (p-type CIGS film layer), a buffer layer 4 (n-type CdS film layer), a transparent conductive layer 3, an upper electrode layer 2, and an anti-reflection layer 1 to form a thin film solar cell, The bottom surface of the substrate 7 is adhered to the insulating spacer 9 by the adhesive layer 8. The basic structure and manufacturing method are basically the same as those in the first embodiment.

Claims

权 利 要 求 Rights request
1. 一种搪瓷太阳能建筑墙板, 包括减反射层 (1 )、 上电极层 (2)、 透明导 电层 (3)、 底电极层 (6)和基板 (7), 反射层 (1 ) 是最上层, 之下是上电极层An enamel solar building wall panel comprising an anti-reflection layer (1), an upper electrode layer (2), a transparent conductive layer (3), a bottom electrode layer (6) and a substrate (7), wherein the reflective layer (1) is Uppermost layer, lower electrode layer
(2)和透明导电层 (3), 基底 (7) 的上面是底电极层 (6), 其特征在于在透明 导电层 (3) 和底电极层 (6) 之间具有缓冲层 (4) 和吸收层 (5), 所述的缓冲 层 (4) 为 n型 CdS薄膜层, 所述的吸收层 (5) 为 p型 CIGS薄膜层, 所述的基 板(7)为搪瓷板, 该基板(7)的下面通过粘胶层(8)连接一层保温隔离层(9)。 (2) and a transparent conductive layer (3), the upper surface of the substrate (7) is a bottom electrode layer (6), characterized by having a buffer layer (4) between the transparent conductive layer (3) and the bottom electrode layer (6) And an absorbing layer (5), wherein the buffer layer (4) is an n-type CdS film layer, the absorbing layer (5) is a p-type CIGS film layer, and the substrate (7) is an enamel plate, the substrate A layer of insulating spacer (9) is connected to the underside of (7) via an adhesive layer (8).
2. 根据权利要求 1所述的搪瓷太阳能建筑墙板, 其特征在于所述的搪瓷板 为钢板搪瓷或铝搪瓷。  2. The enamel solar building wall panel according to claim 1, wherein the enamel plate is a steel plate enamel or an aluminum enamel.
3. 根据权利要求 1或 2所述的搪瓷太阳能建筑墙板, 其特征在于所述的搪 瓷板的厚度为 1.5〜2.5mm。  The enamel solar building wall panel according to claim 1 or 2, wherein the enamel plate has a thickness of 1.5 to 2.5 mm.
4.根据权利要求 1所述的搪瓷太阳能建筑墙板,其特征在于所述的基板(7) 的底面四周设有安装连接件 (10)。  The enamel solar building wall panel according to claim 1, characterized in that the bottom surface of the substrate (7) is provided with a mounting connecting member (10).
PCT/CN2010/071090 2009-12-24 2010-03-17 Enamel solar building wall panel WO2011075967A1 (en)

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CN110416352A (en) * 2018-04-28 2019-11-05 北京铂阳顶荣光伏科技有限公司 A kind of preparation method of glassed steel substrate film solar battery
CN110429150A (en) * 2018-04-28 2019-11-08 北京铂阳顶荣光伏科技有限公司 A kind of glassed steel based thin film solar cell
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