WO2011072061A2 - Procédé de passivation amélioré pour protéger le silicium avant un décapage d'implantation à forte dose - Google Patents
Procédé de passivation amélioré pour protéger le silicium avant un décapage d'implantation à forte dose Download PDFInfo
- Publication number
- WO2011072061A2 WO2011072061A2 PCT/US2010/059547 US2010059547W WO2011072061A2 WO 2011072061 A2 WO2011072061 A2 WO 2011072061A2 US 2010059547 W US2010059547 W US 2010059547W WO 2011072061 A2 WO2011072061 A2 WO 2011072061A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- work piece
- plasma
- seconds
- sit
- wafer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 90
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 239000007943 implant Substances 0.000 title abstract description 28
- 238000002161 passivation Methods 0.000 title abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000001257 hydrogen Substances 0.000 claims abstract description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000007789 gas Substances 0.000 claims description 51
- 229910052731 fluorine Inorganic materials 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 6
- 229910020776 SixNy Inorganic materials 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 51
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 16
- 239000001301 oxygen Substances 0.000 abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 abstract description 16
- 238000005468 ion implantation Methods 0.000 abstract description 11
- 210000002381 plasma Anatomy 0.000 description 70
- 235000012431 wafers Nutrition 0.000 description 58
- 150000002500 ions Chemical class 0.000 description 26
- 241000894007 species Species 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 9
- 229910002092 carbon dioxide Inorganic materials 0.000 description 8
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000001273 butane Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000183024 Populus tremula Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- IKWTVSLWAPBBKU-UHFFFAOYSA-N a1010_sial Chemical compound O=[As]O[As]=O IKWTVSLWAPBBKU-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000413 arsenic oxide Inorganic materials 0.000 description 1
- 229960002594 arsenic trioxide Drugs 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- -1 e.g. Chemical class 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
Definitions
- the present invention pertains to methods and apparatuses to remove or strip photoresist material and removing related residues from a work piece surface.
- this application relates to methods and apparatus for stripping resist after ion implant or plasma assisting doping implant (low dose or high-dose implanted resist).
- Photoresist is a light sensitive material used in certain fabrication processes to form a patterned coating on a work piece, e.g., a semiconductor wafer, during processing. After exposing the photoresist coated surface to a pattern of high energy radiation, a portion of the photoresist is removed to reveal the surface below, leaving the rest of the surface protected. Semiconductor processes such as etching, depositing, and ion implanting are performed on the uncovered surface and the remaining photoresist. After performing one or more semiconductor processes, the remaining photoresist is removed in a strip operation.
- the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues.
- a passivation plasma allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues.
- aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate.
- methods and apparatus remove photoresist material after high-dose ion implantation processes.
- One aspect of the invention relates to a method of removing material from a work piece surface in a reaction chamber, and involves exposing the work piece to a plasma generated from forming gas; after exposing the work piece to the forming gas plasma, allowing the wafer to sit in a non-plasma environment for a time period of at least 30 seconds; and after allowing the wafer to sit, exposing the wafer to an oxygen- or hydrogen-based plasma to remove the material.
- the work piece is allowed to sit for at least about 100 seconds, at least about 150 seconds, at least about 200 seconds, or at least about 220 seconds.
- At least one of the oxygen- or hydrogen-based plasma includes fluorine species; in other embodiments, neither do.
- the material removed from the work piece surface may be a high-dose implanted resist.
- the forming gas plasma is remotely generated.
- a protective film forms on exposed silicon portions of the workpiece after exposure to the forming gas plasma.
- the protective film may be a Si x N y film.
- Another aspect of the invention relates to an apparatus for removing material from a work piece surface including a reaction chamber including a plasma source, a showerhead positioned downstream of the plasma source, and a work piece support downstream of the showerhead, said work piece support comprising a pedestal and temperature-controlling mechanism to control a temperature of a work piece supported on the work piece support; and a controller for executing a set of instructions, said set of instruction including instructions for exposing the work piece to a plasma generated from forming gas; after exposing the work piece to the forming gas plasma, allowing the wafer to sit in a non-plasma environment for a time period of at least 30 seconds; and after allowing the wafer to sit, exposing the wafer to an oxygen- or hydrogen-based plasma to remove the material.
- Figures 1A - ID depict various stages of semiconductor device fabrication before and after ion implantation and stripping operations.
- Figure 2 is a process flow diagram illustrating operations in accordance with certain embodiments of the present invention.
- Figure 3 is a graph showing silicon loss as a function of post-passivation wait time.
- Figure 4 is a schematic illustration showing an apparatus suitable for implementing aspects of the present invention.
- Figure 5 shows a multi-station sequential architecture suitable for implementing aspects of the present invention.
- the terms "work piece”, “semiconductor wafer”, “wafer” and “partially fabricated integrated circuit” will be used interchangeably.
- the term “partially fabricated integrated circuit” can refer to a silicon wafer during any of many stages of integrated circuit fabrication thereon. The following detailed description assumes the invention is implemented on a wafer. However, the invention is not so limited.
- the work piece may be of various shapes, sizes, and materials.
- other work pieces that may take advantage of this invention include various articles such as displays, printed circuit boards, and the like.
- Photoresist is a light sensitive material used in certain fabrication processes to form a patterned coating on a work piece, e.g., a semiconductor wafer, during processing. After exposing the photoresist coated surface to a pattern of high energy radiation, a portion of the photoresist is removed to reveal the surface below, leaving the rest of the surface protected. Semiconductor processes such as etching, depositing, and ion implanting are performed on the uncovered surface and the remaining photoresist. After performing one or more semiconductor processes, the remaining photoresist is removed in a strip operation.
- dopant ions e.g., ions of boron, boron difluoride, indium, gallium, thallium, phosphorous, arsenic, antimony, bismuth, or germanium
- the ions implant in exposed regions of the work piece as well as in the remaining photoresist surface.
- the process may form well regions (source/drain) and lightly doped drain (LDD) and doubled diffused drain (DDD) regions.
- LDD lightly doped drain
- DDD doubled diffused drain
- the ion implant impregnates the resist with the implant species and depletes the surface of hydrogen.
- the outer layer or crust of the resist forms a carbonized layer that may be much denser than the underlying bulk resist layer. These two layers have different thermal expansion rates and react to stripping processes at different rates.
- HDIS high dose implantation strip
- monatomic oxygen plasma is formed away from the process chamber and then directed at the work piece surface.
- the reactive oxygen combines with the photoresist to form gaseous by-products which is removed with a vacuum pump.
- additional gases are needed to remove the implanted dopants with oxygen.
- Primary HDIS considerations include strip rate, amount of residue, and film loss of the exposed and underlying film layer.
- Residues are commonly found on the substrate surface after HDIS and stripping. They may result from sputtering during the high-energy implant, incomplete removal of crust, and/or oxidation of implant atoms in the resist. After stripping, the surface should be residue free or substantially residue free to ensure high yield and eliminate the need for additional residue removal processing. Residues may be removed by overstripping, i.e., a continuation of the strip process past the point nominally required to remove all photoresist. Unfortunately, in conventional HDIS operations, overstripping sometimes removes some of the underlying functional device structure. At the device layer, even very little silicon loss from the transistor source/drain regions may adversely affect device performance and yield, especially for ultra shallow junction devices fabricated at the ⁇ 32nm design rule or below.
- the methods and apparatus of the invention may be used to efficiently and effectively to remove photoresist materials after high-dose ion implantation.
- the invention is not limited to high-dose implant strip (HDIS).
- HDIS high-dose implant strip
- the invention is also not limited to any particular category of dopants implanted.
- described methods and apparatus may be effectively used with stripping after medium or low dose implant.
- specific dopant ions such as boron, arsenic, and phosphorous are discussed, the described methods and apparatus may be effectively used to strip resist impregnated with other dopants, such as nitrogen, oxygen, carbon, germanium, and aluminum.
- the methods and apparatus of the present invention use passivation plasmas that are produced from forming gas.
- the methods and apparatus also use photoresist stripping and ion removal plasmas that are generated from plasmas gases that contain oxygen and/or hydrogen.
- the gases also contain a fluorine-containing gas, a weak oxidizing agent and one or more additional components.
- the actual species present in the plasma may be a mixture of different ions, radicals, and molecules derived from the particular gases used to generate the plasmas described herein.
- other species may be present in the reaction chamber, such as small hydrocarbons, carbon dioxide, water vapor and other volatile components as the plasma reacts with and breaks down the organic photoresist and other residues.
- the initial gas/gases introduced into the plasma is/are often different from the gas/gases that exist in the plasma as well as the gas/gases contact the work piece surface during strip.
- Figure 1A to ID depicts various stages of semiconductor fabrication before and after ion implantation and stripping operations.
- Figure 1A shows a semiconductor substrate 101 coated with photoresist material 103.
- the substrate 101 may include one or more layers of deposited film, e.g., oxide film, silicide contact, and/or polysilicon film, or may be a bare silicon substrate, including for example a silicon-on-insulator type substrate.
- the photoresist material coats the entire substrate surface.
- the photoresist is then exposed to patterned radiation generated through a mask and developed to remove a portion of the material, e.g., the opening 104 shown in Figure 1A between the remaining photoresist materials 103.
- the substrate is then exposed to an ion implant process.
- ion implant the surface of the work piece or wafer is implanted with dopant ions.
- the process may be, for example, a plasma-immersion ion implantation (PHI) or ion beam implantation.
- the ions bombard the substrate surface, including the exposed silicon layer 101 and the photoresist 103.
- PHI plasma-immersion ion implantation
- small amounts of the underlying material 107 may be sputtered to the photoresist sidewalls. See Figure IB.
- This material may include some of the implant species, other material in the plasma or ion beam, and by-products of the implantation. They include silicon, aluminum, carbon, fluorine, titanium, other contact materials such as cobalt, and oxygen in both elemental and compound form.
- the actual species depend on the composition of the substrate before ion implant, the photoresist, and the implanted species.
- a doped region 109 is created.
- the ion energy or intensity of the bombardment determines the depth or thickness of the doped region.
- the density of the ion flux determines the extent of doping.
- the ions also impregnate the photoresist surface creating a crust layer 105.
- the crust layer 105 may be carbonized and highly cross-linked polymer chains.
- the crust is usually depleted of hydrogen and impregnated with the implant species.
- the crust layer 105 is denser than the bulk resist layer 103. The relative density depends on the ion flux while the thickness of the crust layer depends on the ion energy.
- This crust layer 105 is harder to strip than the bulk photoresist 103 below. Removal rates of the crust layer may be 50% or 75% slower than the underlying bulk Enhanced Passivation process to protect Silicon prior to High Dose Implant Enhanced Passivation process to protect Silicon prior to High Dose Implant photoresist.
- the bulk photoresist contains relatively high levels of chemically bonded nitrogen and some of its original casting solvent. At elevated wafer temperature, e.g., above 150 to above 200oC, the bulk resist can outgas and expand relative to the crust layer. The entire photoresist can then "pop" as the underlying bulk photoresist builds up pressure under the crust.
- Photoresist popping is a source of particles and process defects because the residues are especially hard to clean from the wafer surface and chamber internal parts. With high- dose ion implantation, the density difference between the crust and underlying bulk photoresist layer is even higher. The crust may also be thicker.
- Figure 1C shows the substrate after a strip that fails to completely remove the photoresist 103 and the sidewall sputter residue 107.
- the sidewall sputter residue 107 may include particles that do not form a volatile compound under conventional strip chemistries. These particles may remain after a conventional strip operation.
- the residue may also include oxides of implanted species formed with the reactive oxygen used in oxygen-based strip chemistries, such as boron oxide and arsenic oxide.
- Portions of the crust 105 may also remain on the substrate. Crust sidewalls and corners at the bottom of photoresist vias may be hard to strip because of geometries. These residue particles may be removed by overstripping in some cases, using fluorinated chemistry, or wet cleaning the wafer.
- Silicon loss is a function of resist thickness, crust thickness, and percent overstrip. Longer and more aggressive stripping to remove thicker resist can also remove more silicon. For resist with thicker crust, the difference between the crust layer and bulk resist layer is even more pronounced. The thicker crust sidewalls and corners are even harder to strip. Thus, strip processes designed to remove thick crust also tends to remove more silicon. Overstrip may be used to address resist uniformity and geometries in addition to residue removal.
- Overstrip is a continuation of the strip process past the point nominally required to remove all photoresist. If the photoresist is totally removed in some areas of the wafer but not others, continuation of the strip process would cause additional material, typically silicon and silicon oxide, to be removed from areas that are already stripped.
- Figure ID shows the substrate after all residue has been removed. According to various embodiments, the residue is removed without additional silicon loss or oxidation and with minimum delay. In certain embodiments, the strip process leaves no residue and thus reduces the number of process steps.
- HDIS high dose implant strip
- FIG. 2 is a process flow diagram 200 illustrating operations in a method according to certain embodiments.
- a wafer having photoresist and implant residue material is provided in an operation 201.
- the wafer may be provided to a chamber capable of containing a plasma.
- the wafer is optionally pre-heated (prior to, during, or after operation 201) to a set temperature low enough to prevent popping, but high enough to provide energy for formation of a passivation layer and an acceptable etch rate in further operations.
- the wafer is then exposed to a plasma generated from forming gas an operation 203.
- the forming gas comprises hydrogen and an inert dilutant, such as, for example, nitrogen, helium, or the like, or a combination thereof.
- the forming gas is about 0.5 to about 10 molar percent (%) hydrogen. In a particular embodiment of the invention, the forming gas is about 3 to about 6 % hydrogen, e.g., 4% hydrogen. In certain embodiments, pure nitrogen gas with essentially no hydrogen is used. It has been found that pure nitrogen can provide as similar passivation effect as forming gas.
- the wafer is exposed to the forming gas plasma for a period of time, e.g., on the order of about 10 to 90 seconds, e.g., about 20 to 40 seconds.
- the plasma is a remotely-generated plasma, though it may be an in-situ plasma.
- the plasma is generated from a gas consisting essentially of forming gas. In other embodiments, other species may be added. In certain embodiments, substantially no oxygen or fluorine is present in the gases inlet to the plasma generator.
- the plasma is extinguished and the wafer sits for a period of time.
- the wafer is allowed to cool during this operation, for example to about 35 C.
- a protective surface forms on the exposed silicon to slow prevent oxidation or etching from subsequent oxygen-based or hydrogen-based stripping chemistries that may include fluorine species.
- the protective surface may be a SixNy film.
- Figure 3 is a graph showing silicon loss (Angstroms) as a function of wait time (seconds) between exposure to the forming gas plasma, and a subsequent stripping process using a hydrogen-based chemistry containing fluorine. The silicon loss decreases sharply as the wait time increases, eventually leveling off around 220 seconds.
- the wait time is at least about 30 seconds, at least about 60 seconds, at least about 100 seconds, at least about 120 seconds, at least about 140 seconds, at least about 160 seconds, at least about 180 seconds, at least about 200 seconds, at least about 220 seconds, at least about 240, at least about 260 seconds, or at least about 280 seconds.
- the effect observed in Figure 3 is unexpected as the chemical kinetics of the reaction to form a SixNy film would be expected to be much faster.
- a stripping process is performed in an operation 207.
- the stripping process may use one or more oxygen-based or hydrogen- based plasmas.
- the stripping chemistry additionally contains fluorine species in one or more operations.
- Fluorine compounds that may be fed to the plasma generator to generate such species include nitrogen trifluoride (NF3), sulfur hexafluoride (SF6), hexafluoroethane (C2F6), tetrafluoromethane (CF4), trifluoromethane (CHF3), difluoromethane (CH2F2), octofluoropropane (C3F8), octofluorocyclobutane (C4F8), octofluoro[l-]butane (C4F8), octofluoro[2-]butane (C4F8), octofluoroisobutylene (C4F8), fluorine (F2), and the like.
- NF3 nitrogen trifluoride
- SF6 sulfur hexafluoride
- C2F6 hexafluoroethane
- CF4F4 tetrafluoromethane
- CHF3F3
- plasmas to remove photoresist and HDI residue include plasmas generated from the following:
- forming gas is added to one or more of these HDI strip operations.
- forming gas is added to all non-fluorine containing plasma operations. It has been found that using forming gas or pure nitrogen in the fluorine-containing stations can adversely affect silicon loss. Without being bound by a particular theory, it is believed that this may be due to nitrogen in the forming gas facilitating the disassociation of the NF3, releasing more F- ions. Typically, no significant wait time is imposed after these operations, though in certain embodiments, it may be. Examples are:
- RF plasma sources may be used in accordance with the invention, including RF, DC, and microwave based plasma sources.
- a downstream RF plasma source is used.
- the RF plasma power for a 300 mm wafer ranges between about 300 Watts to about 10 Kilowatts. In some embodiments, the RF plasma power is between about 2000 Watts and 5000 Watts, e.g., 3500 W.
- the plasma gas is distributed to the work surface via a showerhead assembly.
- the showerhead assembly may be grounded or have an applied voltage to attract some charge species while not affecting the flow of neutral species to the wafer, e.g., 0-1000 watt bias. Many of the electrically charged species in the plasma recombine at the showerhead.
- the assembly includes the showerhead itself which may be a metal plate having holes to direct the plasma and inert gas mixture into the reaction chamber.
- the showerhead redistributes the active hydrogen from the plasma source over a larger area, allowing a smaller plasma source to be used.
- the number and arrangement of the showerhead holes may be set to optimize strip rate and strip rate uniformity.
- the showerhead holes are preferably smaller and fewer in the center of the showerhead in order to push the active gases toward the outer regions.
- the showerhead may have at least 100 holes.
- Suitable showerhead include the Gamma xPR showerhead or the GxT drop-in showerhead available from Novellus Systems, Inc. of San Jose, CA. In embodiments in which there is no showerhead assembly, the plasma enters the process chamber directly.
- the process chamber may be any suitable reaction chamber for the strip operation being performed. It may be one chamber of a multi-chambered apparatus or it may simply be a single chamber apparatus. The chamber may also include multiple stations where different wafers are processed simultaneously. The process chamber may be the same chamber where the implant, etch, or other resist-mediated process takes place. In other embodiments, a separate chamber is reserved for the strip. Process chamber pressure may range from about 600 mTorr to 2 Torr. In certain embodiments, the pressure ranges from about 0.9 Torr to 1.5 Torr. [0043] The process chamber includes one or more processing stations on which strip operations are performed. In certain embodiments, the one or more processing stations includes a preheat station, at least one strip station, and an over-ash station.
- the wafer support is configured to support the wafer during processing.
- the wafer support may also transfer heat to and from the wafer during processing to adjust the wafer temperature as necessary.
- the wafer is supported on a plurality of minimum contacts and does not physically contact the wafer support surface plane.
- a spindle picks up the wafer and transfers the wafer from one station to another.
- FIG 4 is a schematic illustration showing aspects of a downstream plasma apparatus 400 suitable for practicing the present invention on wafers.
- This apparatus may be used both for passivation and strip operations.
- Apparatus 400 has a plasma producing portion 411 and an exposure chamber 401 separated by a showerhead assembly 417. Inside exposure chamber 401, a wafer 403 rests on a platen (or stage) 405. Platen 405 is fitted with a heating/cooling element. In some embodiments, platen 405 is also configured for applying a bias to wafer 403. Low pressure is attained in exposure chamber 401 via vacuum pump via conduit 407.
- Sources of gaseous hydrogen (with or without dilution/carrier gas) and carbon dioxide (or other weak oxidizing agent) provide a flow of gas via inlet 409 into plasma producing portion 411 of the apparatus.
- Plasma producing portion 411 is surrounded in part by induction coils 413, which are in turn connected to a power source 415.
- gas mixtures are introduced into plasma producing portion 411, induction coils 413 are energized and a plasma is generated in plasma producing portion 411.
- showerhead assembly 417 may have an applied voltage or be grounded directs the flow of species into exposure chamber 401.
- wafer 403 may be temperature controlled and/or a RF bias may be applied.
- induction coils 413 may loop around the plasma source 411 in an interlaced pattern.
- the plasma source 411 may be shaped as a dome instead of a cylinder.
- a controller 450 may be connected to components of the process chamber, and control process gas composition, pressure, temperature and wafer indexing of the stripping operations.
- Machine -readable media may be coupled to the controller and contain instructions for controlling process conditions for these operations.
- Suitable plasma chambers and systems include the Gamma 2100, 2130 I2CP (Interlaced Inductively Coupled Plasma), G400, and GxT offered by Novellus Systems, Inc. of San Jose, CA.
- Other systems include the Fusion line from Axcelis Technologies Inc. of Rockville, Maryland, TERA21 from PSK Tech Inc. in Korea, and the Aspen from Mattson Technology Inc. in Fremont, CA.
- various strip chambers may be configured onto cluster tools. For example, a strip chamber may be added to a Centura cluster tool available from Applied Materials of Santa Clara, CA.
- the work piece used in accordance with the methods and apparatus of the invention is a semiconductor wafer. Any size wafer may be used. Most modern wafer fabrication facilities use either 200 mm or 300 mm wafers.
- the process and apparatus disclosed herein strips photoresist after a processing operation such as etching, ion implant, or deposition.
- the present invention is suitable for wafers having very small features or critical dimensions, e.g., sub 100 nm, at 65 nm, or at or less than 45 nm.
- the low silicon loss feature of the HDIS as disclosed is particularly suitable for very shallow junctions of advanced logic devices.
- the present invention is also specifically suitable for wafers undergoing front end of the line (FEOL) ion implantation, especially high-dose ion implantation.
- FEOL front end of the line
- the plasma-activated species reacts with the photoresist and sputter residue on the wafer.
- the reactive gas may include a number of plasma activated species, radicals, charged species, and gas by-products.
- the volume concentration of various hydrogen species may be about 20-80% of the gas at the wafer, typically over 50%.
- the volume concentration of various oxygen species may be about 20-80%) of the gas at the wafer, typically over 50%>.
- the volume concentration of various fluorine species may be 0.01% to about 2% or less than 1%.
- the volume concentration of various species from the weak oxidizing agent may be 0.05 to about 5% or about 1.2%. These species may include H2*, H2+, H+, H*, e-, OH, O*, CO, C02, H20, HF, F*, F-, CF, CF2, and CF3.
- Process conditions may vary depending upon the wafer size. In some embodiments of the invention, it is desired to keep the work piece at a particular temperature during the application of plasmas to its surface. Wafer temperatures can range between about 110 degrees and about 500 degrees Celsius. To reduce the likelihood of photoresist popping described above, wafer temperature is preferably increased slowly until enough crust has been removed and photoresist popping ceases to be a concern. Initial station temperature may be about 110 degrees to about 260 degrees Celsius, for example, about 240 degrees Celsius. Later stations can use higher temperatures such as 285 degrees Celsius and about 350 degrees Celsius successfully with good strip rates. In certain embodiments, the temperature is lowered during NF3 spikes to reduce Si loss associated with these spikes. EXAMPLE PROCESSES
- a multi-station strip apparatus is employed to perform the photoresist and residue stripping processes described herein.
- Figure 5 is a simplified schematic showing a top view of such an apparatus including stations 1, 2, 3, 4, 5 and 6. Wafers enter the apparatus at station 1 via chamber 501, are transferred to each station in sequence for a processing operation at that station and exit from station 6 via chamber 502 after the process is complete.
- the architecture permits pausing or cooling the wafer after the passivation process to protect against silicon erosion by HDIS strip chemistries.
- a first pass on 6 stations is performed to provide the forming gas passivation, followed by pre-heat in station 1 and strip operations in stations 2-6 in a second pass.
- the waiting operation may take place outside the chamber, in a non- oxidative environment.
- the disclosed methods and apparatus may be implemented in systems including lithography and/or patterning hardware for semiconductor fabrication. Further, the disclosed methods may be implemented in a process with lithography and/or patterning processes preceding or following the disclosed methods.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201080055428.6A CN102652351B (zh) | 2009-12-11 | 2010-12-08 | 在高剂量植入剥除前保护硅的增强式钝化工艺 |
JP2012543261A JP5770740B2 (ja) | 2009-12-11 | 2010-12-08 | 高ドーズインプラントストリップの前に行われる、シリコンを保護するためのパッシベーションプロセスの改善方法およびそのための装置 |
KR1020127017871A KR101770008B1 (ko) | 2009-12-11 | 2010-12-08 | 고주입량 주입 박리 전에 실리콘을 보호하기 위한 개선된 패시베이션 공정 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28591809P | 2009-12-11 | 2009-12-11 | |
US61/285,918 | 2009-12-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011072061A2 true WO2011072061A2 (fr) | 2011-06-16 |
WO2011072061A3 WO2011072061A3 (fr) | 2011-09-22 |
Family
ID=44141527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2010/059547 WO2011072061A2 (fr) | 2009-12-11 | 2010-12-08 | Procédé de passivation amélioré pour protéger le silicium avant un décapage d'implantation à forte dose |
Country Status (6)
Country | Link |
---|---|
US (1) | US8721797B2 (fr) |
JP (1) | JP5770740B2 (fr) |
KR (1) | KR101770008B1 (fr) |
CN (1) | CN102652351B (fr) |
TW (1) | TWI518773B (fr) |
WO (1) | WO2011072061A2 (fr) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8591661B2 (en) | 2009-12-11 | 2013-11-26 | Novellus Systems, Inc. | Low damage photoresist strip method for low-K dielectrics |
US8641862B2 (en) | 2004-12-13 | 2014-02-04 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
US8716143B1 (en) | 2005-05-12 | 2014-05-06 | Novellus Systems, Inc. | Plasma based photoresist removal system for cleaning post ash residue |
JP2015529014A (ja) * | 2012-07-16 | 2015-10-01 | マットソン テクノロジー インコーポレイテッドMattson Technology, Inc. | 純還元性プラズマ中で高アスペクト比のフォトレジストを除去する方法 |
US9373497B2 (en) | 2007-04-04 | 2016-06-21 | Novellus Systems, Inc. | Methods for stripping photoresist and/or cleaning metal regions |
US9613825B2 (en) | 2011-08-26 | 2017-04-04 | Novellus Systems, Inc. | Photoresist strip processes for improved device integrity |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7740768B1 (en) | 2006-10-12 | 2010-06-22 | Novellus Systems, Inc. | Simultaneous front side ash and backside clean |
US20110143548A1 (en) | 2009-12-11 | 2011-06-16 | David Cheung | Ultra low silicon loss high dose implant strip |
JP5770740B2 (ja) | 2009-12-11 | 2015-08-26 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 高ドーズインプラントストリップの前に行われる、シリコンを保護するためのパッシベーションプロセスの改善方法およびそのための装置 |
US9514954B2 (en) | 2014-06-10 | 2016-12-06 | Lam Research Corporation | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films |
US11360384B2 (en) * | 2018-09-28 | 2022-06-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of fabricating and servicing a photomask |
US11164876B2 (en) | 2019-02-07 | 2021-11-02 | Micron Technology, Inc. | Atom implantation for passivation of pillar material |
US11501972B2 (en) * | 2020-07-22 | 2022-11-15 | Applied Materials, Inc. | Sacrificial capping layer for passivation using plasma-based implant process |
CN114823297B (zh) * | 2022-04-19 | 2023-01-31 | 度亘激光技术(苏州)有限公司 | 光刻胶去除工艺及半导体制造工艺 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5767021A (en) * | 1992-06-22 | 1998-06-16 | Matsushita Electric Industrial Co., Ltd. | Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate |
US20020111041A1 (en) * | 2001-02-12 | 2002-08-15 | Lam Research Corporation | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
JP2007019367A (ja) * | 2005-07-11 | 2007-01-25 | Ricoh Co Ltd | 半導体装置の製造方法 |
US20090221148A1 (en) * | 2008-02-29 | 2009-09-03 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus and computer-readable storage medium |
Family Cites Families (181)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US790755A (en) * | 1904-06-28 | 1905-05-23 | Max Rockstroh | Platen printing-press. |
US4201579A (en) | 1978-06-05 | 1980-05-06 | Motorola, Inc. | Method for removing photoresist by hydrogen plasma |
US4357203A (en) | 1981-12-30 | 1982-11-02 | Rca Corporation | Plasma etching of polyimide |
US4699689A (en) | 1985-05-17 | 1987-10-13 | Emergent Technologies Corporation | Method and apparatus for dry processing of substrates |
US5292393A (en) | 1986-12-19 | 1994-03-08 | Applied Materials, Inc. | Multichamber integrated process system |
US5158644A (en) | 1986-12-19 | 1992-10-27 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
JPH0770524B2 (ja) | 1987-08-19 | 1995-07-31 | 富士通株式会社 | 半導体装置の製造方法 |
US5354386A (en) | 1989-03-24 | 1994-10-11 | National Semiconductor Corporation | Method for plasma etching tapered and stepped vias |
US5122225A (en) | 1990-11-21 | 1992-06-16 | Texas Instruments Incorporated | Selective etch method |
JPH05275326A (ja) * | 1992-03-30 | 1993-10-22 | Sumitomo Metal Ind Ltd | レジストのアッシング方法 |
US5522932A (en) | 1993-05-14 | 1996-06-04 | Applied Materials, Inc. | Corrosion-resistant apparatus |
EP0664347A3 (fr) | 1994-01-25 | 1997-05-14 | Applied Materials Inc | Appareillage pour déposer une couche uniforme d'un matériau sur un substrat. |
US5744049A (en) | 1994-07-18 | 1998-04-28 | Applied Materials, Inc. | Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same |
US5900351A (en) | 1995-01-17 | 1999-05-04 | International Business Machines Corporation | Method for stripping photoresist |
US5817406A (en) | 1995-07-14 | 1998-10-06 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and brazing material connection |
US5633073A (en) | 1995-07-14 | 1997-05-27 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and eutectic connection |
JP3585591B2 (ja) | 1995-07-29 | 2004-11-04 | 株式会社半導体エネルギー研究所 | エッチング装置及びエッチング方法 |
US6045618A (en) | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
US6194628B1 (en) | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Method and apparatus for cleaning a vacuum line in a CVD system |
US6187072B1 (en) | 1995-09-25 | 2001-02-13 | Applied Materials, Inc. | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
US6193802B1 (en) | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment |
US5792269A (en) | 1995-10-31 | 1998-08-11 | Applied Materials, Inc. | Gas distribution for CVD systems |
US5968324A (en) | 1995-12-05 | 1999-10-19 | Applied Materials, Inc. | Method and apparatus for depositing antireflective coating |
US5707485A (en) | 1995-12-20 | 1998-01-13 | Micron Technology, Inc. | Method and apparatus for facilitating removal of material from the backside of wafers via a plasma etch |
JPH09205130A (ja) | 1996-01-17 | 1997-08-05 | Applied Materials Inc | ウェハ支持装置 |
US6013574A (en) | 1996-01-30 | 2000-01-11 | Advanced Micro Devices, Inc. | Method of forming low resistance contact structures in vias arranged between two levels of interconnect lines |
US5660682A (en) | 1996-03-14 | 1997-08-26 | Lsi Logic Corporation | Plasma clean with hydrogen gas |
US5814155A (en) | 1996-06-26 | 1998-09-29 | Vlsi Technology, Inc. | Plasma ashing enhancement |
US6127262A (en) | 1996-06-28 | 2000-10-03 | Applied Materials, Inc. | Method and apparatus for depositing an etch stop layer |
US6083852A (en) | 1997-05-07 | 2000-07-04 | Applied Materials, Inc. | Method for applying films using reduced deposition rates |
US6156149A (en) | 1997-05-07 | 2000-12-05 | Applied Materials, Inc. | In situ deposition of a dielectric oxide layer and anti-reflective coating |
US6129091A (en) | 1996-10-04 | 2000-10-10 | Taiwan Semiconductor Manfacturing Company | Method for cleaning silicon wafers with deep trenches |
US6562544B1 (en) | 1996-11-04 | 2003-05-13 | Applied Materials, Inc. | Method and apparatus for improving accuracy in photolithographic processing of substrates |
US5844195A (en) | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US5911834A (en) | 1996-11-18 | 1999-06-15 | Applied Materials, Inc. | Gas delivery system |
US5830775A (en) | 1996-11-26 | 1998-11-03 | Sharp Microelectronics Technology, Inc. | Raised silicided source/drain electrode formation with reduced substrate silicon consumption |
US5811358A (en) | 1997-01-03 | 1998-09-22 | Mosel Vitelic Inc. | Low temperature dry process for stripping photoresist after high dose ion implantation |
US6039834A (en) | 1997-03-05 | 2000-03-21 | Applied Materials, Inc. | Apparatus and methods for upgraded substrate processing system with microwave plasma source |
US6077764A (en) | 1997-04-21 | 2000-06-20 | Applied Materials, Inc. | Process for depositing high deposition rate halogen-doped silicon oxide layer |
US6306564B1 (en) | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
US6177023B1 (en) | 1997-07-11 | 2001-01-23 | Applied Komatsu Technology, Inc. | Method and apparatus for electrostatically maintaining substrate flatness |
JP3317209B2 (ja) | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US5908672A (en) | 1997-10-15 | 1999-06-01 | Applied Materials, Inc. | Method and apparatus for depositing a planarized passivation layer |
US6797188B1 (en) | 1997-11-12 | 2004-09-28 | Meihua Shen | Self-cleaning process for etching silicon-containing material |
US6536449B1 (en) * | 1997-11-17 | 2003-03-25 | Mattson Technology Inc. | Downstream surface cleaning process |
US6098568A (en) | 1997-12-01 | 2000-08-08 | Applied Materials, Inc. | Mixed frequency CVD apparatus |
US6340435B1 (en) | 1998-02-11 | 2002-01-22 | Applied Materials, Inc. | Integrated low K dielectrics and etch stops |
US6413583B1 (en) | 1998-02-11 | 2002-07-02 | Applied Materials, Inc. | Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6593247B1 (en) | 1998-02-11 | 2003-07-15 | Applied Materials, Inc. | Method of depositing low k films using an oxidizing plasma |
US6287990B1 (en) | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
US6660656B2 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6203657B1 (en) | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
US5980770A (en) | 1998-04-16 | 1999-11-09 | Siemens Aktiengesellschaft | Removal of post-RIE polymer on Al/Cu metal line |
US6432830B1 (en) * | 1998-05-15 | 2002-08-13 | Applied Materials, Inc. | Semiconductor fabrication process |
US6086952A (en) | 1998-06-15 | 2000-07-11 | Applied Materials, Inc. | Chemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomer |
US6800571B2 (en) | 1998-09-29 | 2004-10-05 | Applied Materials Inc. | CVD plasma assisted low dielectric constant films |
US6277733B1 (en) | 1998-10-05 | 2001-08-21 | Texas Instruments Incorporated | Oxygen-free, dry plasma process for polymer removal |
US6342446B1 (en) | 1998-10-06 | 2002-01-29 | Texas Instruments Incorporated | Plasma process for organic residue removal from copper |
US6171945B1 (en) | 1998-10-22 | 2001-01-09 | Applied Materials, Inc. | CVD nanoporous silica low dielectric constant films |
US6245690B1 (en) | 1998-11-04 | 2001-06-12 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
US6107184A (en) | 1998-12-09 | 2000-08-22 | Applied Materials, Inc. | Nano-porous copolymer films having low dielectric constants |
US6417080B1 (en) | 1999-01-28 | 2002-07-09 | Canon Kabushiki Kaisha | Method of processing residue of ion implanted photoresist, and method of producing semiconductor device |
US6130166A (en) | 1999-02-01 | 2000-10-10 | Vlsi Technology, Inc. | Alternative plasma chemistry for enhanced photoresist removal |
US6242350B1 (en) | 1999-03-18 | 2001-06-05 | Taiwan Semiconductor Manufacturing Company | Post gate etch cleaning process for self-aligned gate mosfets |
US6204192B1 (en) | 1999-03-29 | 2001-03-20 | Lsi Logic Corporation | Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures |
US6709715B1 (en) | 1999-06-17 | 2004-03-23 | Applied Materials Inc. | Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds |
US6030901A (en) | 1999-06-24 | 2000-02-29 | Advanced Micro Devices, Inc. | Photoresist stripping without degrading low dielectric constant materials |
US6177347B1 (en) | 1999-07-02 | 2001-01-23 | Taiwan Semiconductor Manufacturing Company | In-situ cleaning process for Cu metallization |
US6281135B1 (en) | 1999-08-05 | 2001-08-28 | Axcelis Technologies, Inc. | Oxygen free plasma stripping process |
US6313042B1 (en) | 1999-09-03 | 2001-11-06 | Applied Materials, Inc. | Cleaning contact with successive fluorine and hydrogen plasmas |
US6767698B2 (en) | 1999-09-29 | 2004-07-27 | Tokyo Electron Limited | High speed stripping for damaged photoresist |
US6287643B1 (en) * | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
JP4221847B2 (ja) | 1999-10-25 | 2009-02-12 | パナソニック電工株式会社 | プラズマ処理装置及びプラズマ点灯方法 |
JP3366301B2 (ja) | 1999-11-10 | 2003-01-14 | 日本電気株式会社 | プラズマcvd装置 |
US6352938B2 (en) | 1999-12-09 | 2002-03-05 | United Microelectronics Corp. | Method of removing photoresist and reducing native oxide in dual damascene copper process |
US6365516B1 (en) | 2000-01-14 | 2002-04-02 | Advanced Micro Devices, Inc. | Advanced cobalt silicidation with in-situ hydrogen plasma clean |
US20010027023A1 (en) | 2000-02-15 | 2001-10-04 | Shigenori Ishihara | Organic substance removing methods, methods of producing semiconductor device, and organic substance removing apparatuses |
JP2001308078A (ja) | 2000-02-15 | 2001-11-02 | Canon Inc | 有機物除去方法、半導体装置の製造方法及び有機物除去装置並びにシステム |
US6184134B1 (en) | 2000-02-18 | 2001-02-06 | Infineon Technologies North America Corp. | Dry process for cleaning residues/polymers after metal etch |
US6667244B1 (en) * | 2000-03-24 | 2003-12-23 | Gerald M. Cox | Method for etching sidewall polymer and other residues from the surface of semiconductor devices |
JP4470274B2 (ja) | 2000-04-26 | 2010-06-02 | 東京エレクトロン株式会社 | 熱処理装置 |
JP4371543B2 (ja) | 2000-06-29 | 2009-11-25 | 日本電気株式会社 | リモートプラズマcvd装置及び膜形成方法 |
US6426304B1 (en) | 2000-06-30 | 2002-07-30 | Lam Research Corporation | Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications |
US20020185226A1 (en) | 2000-08-10 | 2002-12-12 | Lea Leslie Michael | Plasma processing apparatus |
US6562090B1 (en) * | 2000-08-28 | 2003-05-13 | Hercules Incorporated | Fluid abrasive suspension for use in dentifrices |
DE10051380C2 (de) | 2000-10-17 | 2002-11-28 | Advanced Micro Devices Inc | Verfahren zur Herstellung eines Halbleiterbauteils unter Anwendung eines Schrumpfprozesses eines Strukturmerkmals |
US6569257B1 (en) | 2000-11-09 | 2003-05-27 | Applied Materials Inc. | Method for cleaning a process chamber |
US6692903B2 (en) | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
US6733594B2 (en) | 2000-12-21 | 2004-05-11 | Lam Research Corporation | Method and apparatus for reducing He backside faults during wafer processing |
US6479391B2 (en) | 2000-12-22 | 2002-11-12 | Intel Corporation | Method for making a dual damascene interconnect using a multilayer hard mask |
US20020127853A1 (en) | 2000-12-29 | 2002-09-12 | Hubacek Jerome S. | Electrode for plasma processes and method for manufacture and use thereof |
US6319842B1 (en) | 2001-01-02 | 2001-11-20 | Novellus Systems Incorporated | Method of cleansing vias in semiconductor wafer having metal conductive layer |
US6589879B2 (en) | 2001-01-18 | 2003-07-08 | Applied Materials, Inc. | Nitride open etch process based on trifluoromethane and sulfur hexafluoride |
US7753546B2 (en) * | 2001-02-07 | 2010-07-13 | World Factory, Inc. | Umbrella apparatus |
CN101038863B (zh) | 2001-02-15 | 2011-07-06 | 东京毅力科创株式会社 | 被处理件的处理方法及处理装置 |
US7186648B1 (en) | 2001-03-13 | 2007-03-06 | Novellus Systems, Inc. | Barrier first method for single damascene trench applications |
US6764940B1 (en) | 2001-03-13 | 2004-07-20 | Novellus Systems, Inc. | Method for depositing a diffusion barrier for copper interconnect applications |
US6723654B2 (en) | 2001-03-30 | 2004-04-20 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer |
US6951823B2 (en) | 2001-05-14 | 2005-10-04 | Axcelis Technologies, Inc. | Plasma ashing process |
US6834656B2 (en) | 2001-05-23 | 2004-12-28 | Axcelis Technology, Inc. | Plasma process for removing polymer and residues from substrates |
US6875702B2 (en) | 2001-06-11 | 2005-04-05 | Lsi Logic Corporation | Plasma treatment system |
US6632735B2 (en) | 2001-08-07 | 2003-10-14 | Applied Materials, Inc. | Method of depositing low dielectric constant carbon doped silicon oxide |
US20030036284A1 (en) | 2001-08-16 | 2003-02-20 | Yu-Ren Chou | Method for removing the photoresist layer of ion-implanting process |
US6872652B2 (en) | 2001-08-28 | 2005-03-29 | Infineon Technologies Ag | Method of cleaning an inter-level dielectric interconnect |
US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
JP4838464B2 (ja) | 2001-09-26 | 2011-12-14 | 東京エレクトロン株式会社 | 処理方法 |
US6680164B2 (en) | 2001-11-30 | 2004-01-20 | Applied Materials Inc. | Solvent free photoresist strip and residue removal processing for post etching of low-k films |
JP4326746B2 (ja) | 2002-01-07 | 2009-09-09 | 東京エレクトロン株式会社 | プラズマ処理方法 |
US6720132B2 (en) | 2002-01-08 | 2004-04-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bi-layer photoresist dry development and reactive ion etch method |
US7390755B1 (en) | 2002-03-26 | 2008-06-24 | Novellus Systems, Inc. | Methods for post etch cleans |
US6848455B1 (en) | 2002-04-22 | 2005-02-01 | Novellus Systems, Inc. | Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species |
US7074298B2 (en) | 2002-05-17 | 2006-07-11 | Applied Materials | High density plasma CVD chamber |
US6656832B1 (en) | 2002-07-25 | 2003-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd | Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical properties |
AU2003257636A1 (en) | 2002-08-22 | 2004-03-11 | Daikin Industries, Ltd. | Removing solution |
US6900135B2 (en) | 2002-08-27 | 2005-05-31 | Applied Materials, Inc. | Buffer station for wafer backside cleaning and inspection |
US6693043B1 (en) | 2002-09-20 | 2004-02-17 | Novellus Systems, Inc. | Method for removing photoresist from low-k films in a downstream plasma system |
JP2004152136A (ja) * | 2002-10-31 | 2004-05-27 | Matsushita Electric Ind Co Ltd | データ更新システム、データ更新システムの差分データ生成装置及びプログラム、並びに更新後ファイル復元装置及びプログラム |
US6837967B1 (en) | 2002-11-06 | 2005-01-04 | Lsi Logic Corporation | Method and apparatus for cleaning deposited films from the edge of a wafer |
US6787452B2 (en) | 2002-11-08 | 2004-09-07 | Chartered Semiconductor Manufacturing Ltd. | Use of amorphous carbon as a removable ARC material for dual damascene fabrication |
KR100476136B1 (ko) | 2002-12-02 | 2005-03-10 | 주식회사 셈테크놀러지 | 대기압 플라즈마를 이용한 표면처리장치 |
US6780782B1 (en) | 2003-02-04 | 2004-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bi-level resist structure and fabrication method for contact holes on semiconductor substrates |
US20040195208A1 (en) | 2003-02-15 | 2004-10-07 | Pavel Elizabeth G. | Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal |
US20040237997A1 (en) | 2003-05-27 | 2004-12-02 | Applied Materials, Inc. ; | Method for removal of residue from a substrate |
US7205240B2 (en) | 2003-06-04 | 2007-04-17 | Applied Materials, Inc. | HDP-CVD multistep gapfill process |
JP4278444B2 (ja) * | 2003-06-17 | 2009-06-17 | 株式会社日立製作所 | 仮想ポート名の管理装置 |
US7270237B2 (en) * | 2003-07-24 | 2007-09-18 | Stanely T. Mandeltort | Waterproof document storage device |
US7256134B2 (en) | 2003-08-01 | 2007-08-14 | Applied Materials, Inc. | Selective etching of carbon-doped low-k dielectrics |
US6924239B2 (en) | 2003-10-14 | 2005-08-02 | Texas Instruments Incorporated | Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidation |
US20050106888A1 (en) | 2003-11-14 | 2005-05-19 | Taiwan Semiconductor Manufacturing Co. | Method of in-situ damage removal - post O2 dry process |
US20050158667A1 (en) | 2004-01-20 | 2005-07-21 | Applied Materials, Inc. | Solvent free photoresist strip and residue removal processing for post etching of low-k films |
US7361605B2 (en) | 2004-01-20 | 2008-04-22 | Mattson Technology, Inc. | System and method for removal of photoresist and residues following contact etch with a stop layer present |
CN1914714B (zh) | 2004-03-31 | 2011-09-28 | 富士通半导体股份有限公司 | 基板处理装置及半导体装置的制造方法 |
US7628864B2 (en) | 2004-04-28 | 2009-12-08 | Tokyo Electron Limited | Substrate cleaning apparatus and method |
US7288484B1 (en) | 2004-07-13 | 2007-10-30 | Novellus Systems, Inc. | Photoresist strip method for low-k dielectrics |
US7029967B2 (en) * | 2004-07-21 | 2006-04-18 | Texas Instruments Incorporated | Silicide method for CMOS integrated circuits |
US20060016202A1 (en) * | 2004-07-23 | 2006-01-26 | Daniel Lyvers | Refrigerator with system for controlling drawer temperatures |
US7632756B2 (en) * | 2004-08-26 | 2009-12-15 | Applied Materials, Inc. | Semiconductor processing using energized hydrogen gas and in combination with wet cleaning |
US7597816B2 (en) | 2004-09-03 | 2009-10-06 | Lam Research Corporation | Wafer bevel polymer removal |
US20060051965A1 (en) | 2004-09-07 | 2006-03-09 | Lam Research Corporation | Methods of etching photoresist on substrates |
US20060102197A1 (en) | 2004-11-16 | 2006-05-18 | Kang-Lie Chiang | Post-etch treatment to remove residues |
US7202176B1 (en) | 2004-12-13 | 2007-04-10 | Novellus Systems, Inc. | Enhanced stripping of low-k films using downstream gas mixing |
US8193096B2 (en) | 2004-12-13 | 2012-06-05 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
KR100607777B1 (ko) | 2004-12-27 | 2006-08-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US7601272B2 (en) | 2005-01-08 | 2009-10-13 | Applied Materials, Inc. | Method and apparatus for integrating metrology with etch processing |
US7344993B2 (en) | 2005-01-11 | 2008-03-18 | Tokyo Electron Limited, Inc. | Low-pressure removal of photoresist and etch residue |
US7268071B2 (en) | 2005-01-12 | 2007-09-11 | Sony Corporation | Dual damascene interconnections having low K layer with reduced damage arising from photoresist stripping |
US7432172B2 (en) | 2005-01-21 | 2008-10-07 | Tokyo Electron Limited | Plasma etching method |
JP2006221772A (ja) * | 2005-02-14 | 2006-08-24 | Fuji Photo Film Co Ltd | ディスク状情報媒体の製造方法 |
US7198677B2 (en) | 2005-03-09 | 2007-04-03 | Wafermasters, Inc. | Low temperature wafer backside cleaning |
US8129281B1 (en) | 2005-05-12 | 2012-03-06 | Novellus Systems, Inc. | Plasma based photoresist removal system for cleaning post ash residue |
JP2006351594A (ja) * | 2005-06-13 | 2006-12-28 | Toshiba Ceramics Co Ltd | 半導体ウェーハの電気特性の測定方法 |
JP5011852B2 (ja) | 2005-07-20 | 2012-08-29 | 富士通セミコンダクター株式会社 | 電子デバイスの製造方法 |
US7411298B2 (en) * | 2005-08-17 | 2008-08-12 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices |
US7468326B2 (en) | 2005-08-24 | 2008-12-23 | United Microelectronics Corp. | Method of cleaning a wafer |
US7465680B2 (en) | 2005-09-07 | 2008-12-16 | Applied Materials, Inc. | Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 |
US7909960B2 (en) | 2005-09-27 | 2011-03-22 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
KR100742279B1 (ko) | 2005-12-22 | 2007-07-24 | 삼성전자주식회사 | 반도체 소자의 제조 장치 및 방법 |
KR20070069802A (ko) | 2005-12-28 | 2007-07-03 | 엘지.필립스 엘시디 주식회사 | 평판표시소자의 제조장치 및 그를 이용한 기판파손방지방법 |
US7432209B2 (en) | 2006-03-22 | 2008-10-07 | Applied Materials, Inc. | Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material |
US8034176B2 (en) | 2006-03-28 | 2011-10-11 | Tokyo Electron Limited | Gas distribution system for a post-etch treatment system |
US7851369B2 (en) | 2006-06-05 | 2010-12-14 | Lam Research Corporation | Hardmask trim method |
US8124516B2 (en) | 2006-08-21 | 2012-02-28 | Lam Research Corporation | Trilayer resist organic layer etch |
US7740768B1 (en) | 2006-10-12 | 2010-06-22 | Novellus Systems, Inc. | Simultaneous front side ash and backside clean |
US7655571B2 (en) | 2006-10-26 | 2010-02-02 | Applied Materials, Inc. | Integrated method and apparatus for efficient removal of halogen residues from etched substrates |
US7595005B2 (en) | 2006-12-11 | 2009-09-29 | Tokyo Electron Limited | Method and apparatus for ashing a substrate using carbon dioxide |
DE102006062035B4 (de) * | 2006-12-29 | 2013-02-07 | Advanced Micro Devices, Inc. | Verfahren zum Entfernen von Lackmaterial nach einer Implantation mit hoher Dosis in einem Halbleiterbauelement |
US8435895B2 (en) | 2007-04-04 | 2013-05-07 | Novellus Systems, Inc. | Methods for stripping photoresist and/or cleaning metal regions |
JP5332052B2 (ja) | 2007-06-01 | 2013-11-06 | シャープ株式会社 | レジスト除去方法、半導体製造方法、及びレジスト除去装置 |
KR101440282B1 (ko) | 2007-07-11 | 2014-09-17 | 주성엔지니어링(주) | 플라즈마 세정 방법 |
US20090061623A1 (en) | 2007-09-05 | 2009-03-05 | United Microelectronics Corp. | Method of forming electrical connection structure |
SG188140A1 (en) | 2008-02-08 | 2013-03-28 | Lam Res Corp | Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal |
US20090277871A1 (en) * | 2008-03-05 | 2009-11-12 | Axcelis Technologies, Inc. | Plasma mediated ashing processes that include formation of a protective layer before and/or during the plasma mediated ashing process |
US8791001B2 (en) | 2008-09-08 | 2014-07-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | N2 based plasma treatment and ash for HK metal gate protection |
US8591661B2 (en) | 2009-12-11 | 2013-11-26 | Novellus Systems, Inc. | Low damage photoresist strip method for low-K dielectrics |
US8268722B2 (en) * | 2009-06-03 | 2012-09-18 | Novellus Systems, Inc. | Interfacial capping layers for interconnects |
WO2011008436A2 (fr) | 2009-07-13 | 2011-01-20 | Applied Materials, Inc. | Procédé d'élimination de résine photosensible implantée, à partir de substrats d'unités de disque dur |
JP5770740B2 (ja) | 2009-12-11 | 2015-08-26 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 高ドーズインプラントストリップの前に行われる、シリコンを保護するためのパッシベーションプロセスの改善方法およびそのための装置 |
US20110143548A1 (en) | 2009-12-11 | 2011-06-16 | David Cheung | Ultra low silicon loss high dose implant strip |
US9613825B2 (en) | 2011-08-26 | 2017-04-04 | Novellus Systems, Inc. | Photoresist strip processes for improved device integrity |
-
2010
- 2010-12-08 JP JP2012543261A patent/JP5770740B2/ja active Active
- 2010-12-08 CN CN201080055428.6A patent/CN102652351B/zh active Active
- 2010-12-08 US US12/963,503 patent/US8721797B2/en active Active
- 2010-12-08 WO PCT/US2010/059547 patent/WO2011072061A2/fr active Application Filing
- 2010-12-08 KR KR1020127017871A patent/KR101770008B1/ko active IP Right Grant
- 2010-12-10 TW TW099143366A patent/TWI518773B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5767021A (en) * | 1992-06-22 | 1998-06-16 | Matsushita Electric Industrial Co., Ltd. | Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate |
US20020111041A1 (en) * | 2001-02-12 | 2002-08-15 | Lam Research Corporation | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
JP2007019367A (ja) * | 2005-07-11 | 2007-01-25 | Ricoh Co Ltd | 半導体装置の製造方法 |
US20090221148A1 (en) * | 2008-02-29 | 2009-09-03 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus and computer-readable storage medium |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8641862B2 (en) | 2004-12-13 | 2014-02-04 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
US9941108B2 (en) | 2004-12-13 | 2018-04-10 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
US8716143B1 (en) | 2005-05-12 | 2014-05-06 | Novellus Systems, Inc. | Plasma based photoresist removal system for cleaning post ash residue |
US9373497B2 (en) | 2007-04-04 | 2016-06-21 | Novellus Systems, Inc. | Methods for stripping photoresist and/or cleaning metal regions |
US8591661B2 (en) | 2009-12-11 | 2013-11-26 | Novellus Systems, Inc. | Low damage photoresist strip method for low-K dielectrics |
US9613825B2 (en) | 2011-08-26 | 2017-04-04 | Novellus Systems, Inc. | Photoresist strip processes for improved device integrity |
JP2015529014A (ja) * | 2012-07-16 | 2015-10-01 | マットソン テクノロジー インコーポレイテッドMattson Technology, Inc. | 純還元性プラズマ中で高アスペクト比のフォトレジストを除去する方法 |
US10431469B2 (en) | 2012-07-16 | 2019-10-01 | Mattson Technology, Inc. | Method for high aspect ratio photoresist removal in pure reducing plasma |
US11107693B2 (en) | 2012-07-16 | 2021-08-31 | Beijing E-town Semiconductor Technology Co., Ltd. | Method for high aspect ratio photoresist removal in pure reducing plasma |
Also Published As
Publication number | Publication date |
---|---|
JP2013513949A (ja) | 2013-04-22 |
TW201140686A (en) | 2011-11-16 |
WO2011072061A3 (fr) | 2011-09-22 |
US20110139175A1 (en) | 2011-06-16 |
CN102652351A (zh) | 2012-08-29 |
KR101770008B1 (ko) | 2017-08-21 |
TWI518773B (zh) | 2016-01-21 |
CN102652351B (zh) | 2016-10-05 |
JP5770740B2 (ja) | 2015-08-26 |
KR20120107487A (ko) | 2012-10-02 |
US8721797B2 (en) | 2014-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8721797B2 (en) | Enhanced passivation process to protect silicon prior to high dose implant strip | |
US9564344B2 (en) | Ultra low silicon loss high dose implant strip | |
US9941108B2 (en) | High dose implantation strip (HDIS) in H2 base chemistry | |
US8591661B2 (en) | Low damage photoresist strip method for low-K dielectrics | |
US9613825B2 (en) | Photoresist strip processes for improved device integrity | |
US9514954B2 (en) | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films | |
TWI497235B (zh) | 於基於氫氣之化學物中的高劑量植入剝離法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080055428.6 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10836643 Country of ref document: EP Kind code of ref document: A1 |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10836643 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012543261 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20127017871 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10836643 Country of ref document: EP Kind code of ref document: A2 |