WO2011052941A3 - Etching composition for texturing crystalline silicon-based wafer - Google Patents
Etching composition for texturing crystalline silicon-based wafer Download PDFInfo
- Publication number
- WO2011052941A3 WO2011052941A3 PCT/KR2010/007323 KR2010007323W WO2011052941A3 WO 2011052941 A3 WO2011052941 A3 WO 2011052941A3 KR 2010007323 W KR2010007323 W KR 2010007323W WO 2011052941 A3 WO2011052941 A3 WO 2011052941A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystalline silicon
- etching composition
- based wafer
- texturing
- texturing crystalline
- Prior art date
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- 238000005530 etching Methods 0.000 title abstract 2
- 238000009835 boiling Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 150000001923 cyclic compounds Chemical class 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
Disclosed is an etching composition for texturing a crystalline silicon-based wafer, including (A) 0.1 ~ 20 wt% of at least one alkaline compound, (B) 0.1 ~ 50 wt% of at least one cyclic compound having a boiling point of 100 ~ 400°C, and (C) the remainder of water, based on the total weight of the composition.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20090101698 | 2009-10-26 | ||
KR10-2009-0101698 | 2009-10-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011052941A2 WO2011052941A2 (en) | 2011-05-05 |
WO2011052941A3 true WO2011052941A3 (en) | 2011-10-27 |
Family
ID=43922785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2010/007323 WO2011052941A2 (en) | 2009-10-26 | 2010-10-25 | Etching composition for texturing crystalline silicon-based wafer |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW201118154A (en) |
WO (1) | WO2011052941A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014534630A (en) * | 2011-10-19 | 2014-12-18 | ドングウー ファイン−ケム カンパニー、 リミテッドDongwoo Fine−Chem Co., Ltd. | Texture etching solution composition for crystalline silicon wafer and texture etching method |
US8765001B2 (en) | 2012-08-28 | 2014-07-01 | Rohm And Haas Electronic Materials Llc | Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance |
TWI480264B (en) * | 2013-04-12 | 2015-04-11 | Daxin Materials Corp | Liquid crystal alignment agent, liquid crystal alignment film, and liquid crystal display element and method of manufacturing the same |
CN104911037A (en) * | 2015-07-03 | 2015-09-16 | 高旭 | Cleaning fluid for industrial products |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980024804A (en) * | 1996-09-20 | 1998-07-06 | 하라 타카시 | Resin Etching Solution and Etching Method |
KR20050043928A (en) * | 2002-09-04 | 2005-05-11 | 메르크 파텐트 게엠베하 | Etching pastes for silicon surfaces and layers |
KR100718527B1 (en) * | 2006-04-12 | 2007-05-16 | 테크노세미켐 주식회사 | Stripper composition for negative photoresist |
-
2010
- 2010-10-25 TW TW099136383A patent/TW201118154A/en unknown
- 2010-10-25 WO PCT/KR2010/007323 patent/WO2011052941A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980024804A (en) * | 1996-09-20 | 1998-07-06 | 하라 타카시 | Resin Etching Solution and Etching Method |
KR20050043928A (en) * | 2002-09-04 | 2005-05-11 | 메르크 파텐트 게엠베하 | Etching pastes for silicon surfaces and layers |
KR100718527B1 (en) * | 2006-04-12 | 2007-05-16 | 테크노세미켐 주식회사 | Stripper composition for negative photoresist |
Also Published As
Publication number | Publication date |
---|---|
TW201118154A (en) | 2011-06-01 |
WO2011052941A2 (en) | 2011-05-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2011081286A3 (en) | Novel compound for an organic photoelectric device, and organic photoelectric device including same | |
WO2012021026A3 (en) | Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1) | |
WO2011139702A3 (en) | Modified nucleosides and oligomeric compounds prepared therefrom | |
WO2010151855A3 (en) | Iii-v semiconductor structures including aluminum-silicon nitride passivation | |
WO2008102761A1 (en) | Impact absorber composition | |
WO2011155803A3 (en) | Novel compound having hearing protection effects | |
WO2011052941A3 (en) | Etching composition for texturing crystalline silicon-based wafer | |
WO2011041819A3 (en) | Method and device for recognizing faults in a photovoltaic system | |
WO2012028727A3 (en) | Method for the wet-chemical etching back of a solar cell emitter | |
WO2012021025A3 (en) | Texture-etchant composition for crystalline silicon wafer and method for texture-etching (2) | |
EP2311474A4 (en) | Antioxidant, anti-inflammatory, or anti-aging composition containing a plant stem cell line derived from taxus cambium or procambium as an active ingredient | |
WO2011110235A3 (en) | Wall portion for a wind turbine tower | |
WO2010150279A3 (en) | Process for synthesis of diarylpyrimidine non-nucleoside reverse transcriptase inhibitor | |
WO2009152238A3 (en) | A process of forming a silicon solar cell | |
WO2008089733A3 (en) | Etching solution and etching method | |
WO2010100470A3 (en) | Biocidal compositions comprising a phosphonium salt and a polymeric quaternary ammonium compound | |
WO2011008038A3 (en) | Group iii nitride semiconductor light-emitting device | |
WO2009129208A8 (en) | Compositions and methods of inducing endoplasmic reticulum stress reponse | |
WO2009095098A3 (en) | Use of benzothiadiazoles | |
WO2013026538A3 (en) | Determining the energy yield loss of a wind turbine | |
WO2011149261A3 (en) | Interdental cleaner | |
WO2011033316A3 (en) | Uses of carpet | |
WO2012144733A3 (en) | Texture-etchant composition for a crystalline silicon wafer, and texture-etching method | |
WO2011081326A3 (en) | Light-transmitting resin for an encapsulating material and electronic device comprising same | |
MX2009010629A (en) | Compounds made of polyvinyl acetate and vinyl acetate-vinyl laurate copolymer. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10827025 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10827025 Country of ref document: EP Kind code of ref document: A2 |