WO2011028360A3 - Circuit à transistor de puissance - Google Patents

Circuit à transistor de puissance Download PDF

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Publication number
WO2011028360A3
WO2011028360A3 PCT/US2010/044550 US2010044550W WO2011028360A3 WO 2011028360 A3 WO2011028360 A3 WO 2011028360A3 US 2010044550 W US2010044550 W US 2010044550W WO 2011028360 A3 WO2011028360 A3 WO 2011028360A3
Authority
WO
WIPO (PCT)
Prior art keywords
power supply
coupled
circuit
supply terminal
power transistor
Prior art date
Application number
PCT/US2010/044550
Other languages
English (en)
Other versions
WO2011028360A2 (fr
Inventor
Thierry Sicard
Original Assignee
Freescale Semiconductor Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc. filed Critical Freescale Semiconductor Inc.
Publication of WO2011028360A2 publication Critical patent/WO2011028360A2/fr
Publication of WO2011028360A3 publication Critical patent/WO2011028360A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

Un transistor de puissance (44) comprend une première électrode de courant couplée à une première borne d'alimentation électrique (Vbat) et une seconde électrode de courant servant comme sortie du circuit (10). Un circuit de commande d'attaque (20) est couplé entre un premier (19) et un second (17) nœud interne d'alimentation électrique et couplé à une électrode de commande du transistor de puissance. Un premier commutateur (18) couple sélectivement la première borne d'alimentation électrique au premier nœud interne d'alimentation électrique (19). Une seconde borne d'alimentation électrique est couplée au second nœud interne d'alimentation électrique (17). Une diode (38) présente une anode couplée au second nœud interne d'alimentation électrique. Un second commutateur (40) est couplé entre la diode et la sortie du circuit de telle manière que, lorsque le circuit est en mode actif, il couple la cathode de la diode à la sortie du circuit sélectivement selon que la seconde borne d'alimentation électrique est ou non couplée à une terre externe.
PCT/US2010/044550 2009-09-04 2010-08-05 Circuit à transistor de puissance WO2011028360A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/554,537 US8259427B2 (en) 2009-09-04 2009-09-04 Power transistor circuit
US12/554,537 2009-09-04

Publications (2)

Publication Number Publication Date
WO2011028360A2 WO2011028360A2 (fr) 2011-03-10
WO2011028360A3 true WO2011028360A3 (fr) 2011-06-16

Family

ID=43647189

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/044550 WO2011028360A2 (fr) 2009-09-04 2010-08-05 Circuit à transistor de puissance

Country Status (2)

Country Link
US (1) US8259427B2 (fr)
WO (1) WO2011028360A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8514530B2 (en) * 2011-04-28 2013-08-20 Freescale Semiconductor, Inc. Load control and protection system
US9229066B2 (en) * 2013-08-15 2016-01-05 Texas Instruments Incorporated Integrated fluxgate magnetic sensor and excitation circuitry
US9618155B2 (en) 2013-12-19 2017-04-11 Lincoln Industrial Corporation Apparatus and method for controlling a lubrication unit using flow rate feedback
US11092656B2 (en) 2015-05-12 2021-08-17 Texas Instruments Incorporated Fluxgate magnetic field detection method and circuit
JP2023038716A (ja) * 2021-09-07 2023-03-17 三菱電機株式会社 半導体装置
JP2023068978A (ja) * 2021-11-04 2023-05-18 株式会社オートネットワーク技術研究所 制御装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070268726A1 (en) * 2006-05-16 2007-11-22 Honeywell International Inc. Method and apparatus for integrated active-diode-oring and soft power switching
US20080231240A1 (en) * 2007-03-23 2008-09-25 Freescale Semiconductor, Inc. High voltage protection for a thin oxide cmos device
US20080259515A1 (en) * 2004-11-26 2008-10-23 Freescale Semiconductor, Inc. Power Switching Apparatus With Open-Load Detection
US7495939B2 (en) * 2005-11-07 2009-02-24 Freescale Semiconductor, Inc. Ripple filter circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3712083B2 (ja) * 1995-11-28 2005-11-02 株式会社ルネサステクノロジ 内部電源電位供給回路及び半導体装置
DE19815628C1 (de) 1998-04-07 1999-09-23 Siemens Ag Steuereinrichtung für ein Kraftstoff-Einspritzsystem
JP4963144B2 (ja) * 2000-06-22 2012-06-27 ルネサスエレクトロニクス株式会社 半導体集積回路
DE10356089B4 (de) 2003-12-01 2005-11-03 Siemens Ag Schaltungsanordnung und Verfahren zum Steuern eines induktiven Verbrauchers
US8030986B2 (en) * 2009-08-28 2011-10-04 Freescale Semiconductor, Inc. Power transistor with turn off control and method for operating

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080259515A1 (en) * 2004-11-26 2008-10-23 Freescale Semiconductor, Inc. Power Switching Apparatus With Open-Load Detection
US7495939B2 (en) * 2005-11-07 2009-02-24 Freescale Semiconductor, Inc. Ripple filter circuit
US20070268726A1 (en) * 2006-05-16 2007-11-22 Honeywell International Inc. Method and apparatus for integrated active-diode-oring and soft power switching
US20080231240A1 (en) * 2007-03-23 2008-09-25 Freescale Semiconductor, Inc. High voltage protection for a thin oxide cmos device

Also Published As

Publication number Publication date
WO2011028360A2 (fr) 2011-03-10
US8259427B2 (en) 2012-09-04
US20110057592A1 (en) 2011-03-10

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