WO2011013556A1 - 加工対象物切断方法 - Google Patents
加工対象物切断方法 Download PDFInfo
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- WO2011013556A1 WO2011013556A1 PCT/JP2010/062250 JP2010062250W WO2011013556A1 WO 2011013556 A1 WO2011013556 A1 WO 2011013556A1 JP 2010062250 W JP2010062250 W JP 2010062250W WO 2011013556 A1 WO2011013556 A1 WO 2011013556A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0004—Cutting, tearing or severing, e.g. bursting; Cutter details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49787—Obtaining plural composite product pieces from preassembled workpieces
Definitions
- the present invention relates to a workpiece cutting method for cutting a plate-like workpiece along a planned cutting line.
- a modified region is formed at least inside the substrate by irradiating the workpiece with a substrate and a laminated portion provided on the surface of the substrate with laser light. And what cut
- the substrate is made of LTCC (Low Temperature Co-fired Ceramics) or the like and has a scattering property with respect to laser light
- LTCC Low Temperature Co-fired Ceramics
- the present invention has an object to provide a processing object cutting method capable of accurately cutting a processing object along a scheduled cutting line without being influenced by the material of the processing object to be cut. To do.
- a processing object cutting method has a main surface on one end surface of a plate-shaped first processing object including a silicon substrate whose main surface is a (100) surface. And joining the other end face of the plate-like second workpiece so as to face the second workpiece, and irradiating the first workpiece with laser light, thereby cutting the second workpiece to be cut.
- the crack generated from the melting processing region is the cleavage direction of the silicon substrate (that is, the silicon substrate) in the first processing object. It extends in the direction perpendicular to the main surface of the substrate.
- the first workpiece since the other end surface of the second workpiece is joined to one end surface of the first workpiece, the first workpiece extends in a direction perpendicular to the main surface of the silicon substrate. The crack propagates to the second workpiece without changing its direction and reaches one end face of the second workpiece.
- the crack generated from the melting processing region has reached the other end surface of the first workpiece, and therefore, the crack is removed from the second workpiece. It can be easily extended to the workpiece side. Therefore, if the melting region is formed inside the silicon substrate of the first workpiece along the planned cutting line of the second workpiece, no cutting starting point is formed on the second workpiece. However, the second workpiece can be accurately cut along the planned cutting line.
- one end face of the first workpiece and the other end face of the second workpiece are joined by anodic bonding.
- one end face of the first workpiece and the other end face of the second workpiece are joined by surface activated direct joining. According to these joining methods, one end face of the first workpiece and the other end face of the second workpiece are firmly and directly joined. Therefore, the crack extended in the direction orthogonal to the main surface of the silicon substrate in the first workpiece is continuous at the interface between one end surface of the first workpiece and the other end surface of the second workpiece.
- the second workpiece can be reliably extended without changing its direction.
- the laser beam is applied to the first processing object with the other end face of the first processing object as the laser light incident surface.
- the melt processing region is reliably formed inside the silicon substrate of the first workpiece. be able to.
- the stress is generated in the first processing object by expanding an expandable holding member attached to the other end surface of the first processing object.
- the crack generated from the melting processing region has reached the other end surface of the first workpiece, only the holding member attached to the other end surface of the first workpiece is expanded.
- the crack can be easily extended to the second workpiece side.
- the thickness of the silicon substrate is thicker than the thickness of the second workpiece.
- the straight advanceability of the crack extending in the direction orthogonal to the main surface of the silicon substrate in the first workpiece is further enhanced. Therefore, the crack is continuously formed at the interface between one end surface of the first workpiece and the other end surface of the second workpiece, and the second workpiece is hardly changed in direction. Can be extended reliably.
- the second workpiece has a plurality of functional elements, and the line to be cut is set so as to pass between adjacent functional elements.
- the line to be cut is set so as to pass between adjacent functional elements.
- the second workpiece may include a glass substrate, an LTCC substrate, or a sapphire substrate.
- the second workpiece can be accurately cut along the planned cutting line without forming any starting point of cutting on the glass substrate, LTCC substrate, or sapphire substrate.
- the processing object can be accurately cut along the scheduled cutting line regardless of the material of the processing object to be cut.
- the quality of the cut surface is very high (clean) and the chip is not bent. The strength is also very high.
- FIG. 3 is a cross-sectional view taken along the line III-III of the workpiece in FIG. 2. It is a top view of the processing target after laser processing.
- FIG. 5 is a cross-sectional view taken along the line VV of the workpiece in FIG. 4.
- FIG. 5 is a cross-sectional view taken along line VI-VI of the workpiece in FIG. 4. It is the figure showing the photograph of the cut surface of the silicon wafer after laser processing. It is a graph which shows the relationship between the wavelength of a laser beam, and the transmittance
- FIG. 11 is a partial cross-sectional view of the object to be processed shown in FIG. 10 along a planned cutting line. It is a partial cross section figure of the processed object for demonstrating the processed object cutting method which concerns on 1st Embodiment. It is a partial cross section figure of the processed object for demonstrating the processed object cutting method which concerns on 1st Embodiment. It is a partial cross section figure of the processed object for demonstrating the processed object cutting method which concerns on 1st Embodiment. It is a partial cross section figure of the processed object for demonstrating the processed object cutting method which concerns on 1st Embodiment.
- a modified region is formed in the processing object along the planned cutting line by irradiating the plate-shaped processing object with a laser beam with a focusing point aligned. . Therefore, first, the formation of the modified region in the workpiece cutting method according to the present embodiment will be described with reference to FIGS.
- a laser processing apparatus 100 includes a laser light source 101 that oscillates a laser beam (processing laser beam) L, and a dichroic mirror that is disposed so as to change the direction of the optical axis of the laser beam L by 90 °. 103 and a condensing lens 105 for condensing the laser light L.
- the laser processing apparatus 100 also includes a support 107 for supporting the workpiece 1 irradiated with the laser light L collected by the condensing lens 105, and the support 107 in the X, Y, and Z axis directions.
- the laser light L emitted from the laser light source 101 has its optical axis changed by 90 ° by the dichroic mirror 103, and the inside of the processing object 1 placed on the support base 107.
- the light is condensed by the condenser lens 105.
- the stage 111 is moved, and the workpiece 1 is moved relative to the laser beam L along the planned cutting line 5.
- a modified region serving as a starting point for cutting is formed on the workpiece 1 along the planned cutting line 5.
- the modified region will be described in detail.
- a scheduled cutting line 5 for cutting the workpiece 1 is set on the plate-like workpiece 1.
- the planned cutting line 5 is a virtual line extending linearly.
- the laser beam L is projected along the planned cutting line 5 in a state where the focused point P is aligned with the inside of the workpiece 1. It moves relatively (that is, in the direction of arrow A in FIG. 2).
- the modified region 7 is formed inside the workpiece 1 along the planned cutting line 5, and the modified region 7 formed along the planned cutting line 5 is cut. This is the starting point region 8.
- the condensing point P is a location where the laser light L is condensed.
- the planned cutting line 5 is not limited to a straight line, but may be a curved line, or may be a line actually drawn on the surface 3 of the workpiece 1 without being limited to a virtual line.
- the modified region 7 may be formed continuously or intermittently.
- region 7 should just be formed in the inside of the workpiece 1 at least.
- a crack may be formed starting from the modified region 7, and the crack and modified region 7 may be exposed on the outer surface (front surface, back surface, or outer peripheral surface) of the workpiece 1.
- the laser beam L passes through the workpiece 1 and is particularly absorbed in the vicinity of the condensing point inside the workpiece 1, thereby forming a modified region 7 in the workpiece 1 (internal) Absorption laser processing). Therefore, since the laser beam L is hardly absorbed by the surface 3 of the workpiece 1, the surface 3 of the workpiece 1 is not melted. Generally, when a removed portion such as a hole or a groove is formed by being melted and removed from the front surface 3, the processing region gradually proceeds from the front surface 3 side to the back surface side (surface absorption laser processing).
- the modified region formed by the workpiece cutting method according to the present embodiment refers to a region in which density, refractive index, mechanical strength, and other physical characteristics are different from the surroundings. For example, there are (1) a melt treatment region, (2) a crack region, a dielectric breakdown region, and (3) a refractive index change region, and there are regions where these are mixed.
- the modified region in the workpiece cutting method according to the present embodiment is formed by a phenomenon of local absorption of laser light or multiphoton absorption.
- melt-processed region by multiphoton absorption is described in, for example, “Evaluation of silicon processing characteristics by picosecond pulse laser” on pages 72 to 73 of the 66th Annual Meeting of the Japan Welding Society (April 2000). Are listed.
- the focusing point is set inside the object to be processed (for example, a semiconductor material such as silicon), and the electric field intensity at the focusing point is 1 ⁇ 10 8 (W / cm 2 ) or more and the pulse width is 1 ⁇ s or less.
- Laser light L is irradiated. As a result, the laser beam L is absorbed in the vicinity of the condensing point, and the inside of the processing object is locally heated, and a melting treatment region is formed inside the processing object by this heating.
- the melting treatment region is a region once solidified after being melted, a region just in a molten state, a region re-solidified from a molten state, and can also be referred to as a phase-changed region or a region where the crystal structure has changed.
- the melt treatment region can also be said to be a region in which one structure is changed to another structure in a single crystal structure, an amorphous structure, or a polycrystalline structure.
- a region changed from a single crystal structure to an amorphous structure a region changed from a single crystal structure to a polycrystalline structure, or a region changed from a single crystal structure to a structure including an amorphous structure and a polycrystalline structure.
- the melt processing region has, for example, an amorphous silicon structure.
- FIG. 7 is a view showing a photograph of a cross section of a part of a silicon wafer (semiconductor substrate) irradiated with laser light. As shown in FIG. 7, a melt processing region 13 is formed inside the semiconductor substrate 11.
- FIG. 8 is a diagram showing the relationship between the wavelength of the laser beam and the transmittance inside the silicon substrate. However, the reflection components on the front side and the back side of the silicon substrate are removed to show the transmittance only inside. The above relationship was shown for each of the thickness t of the silicon substrate of 50 ⁇ m, 100 ⁇ m, 200 ⁇ m, 500 ⁇ m, and 1000 ⁇ m.
- the thickness of the silicon substrate is 500 ⁇ m or less at the wavelength of 1064 nm of the Nd: YAG laser
- the laser light L is transmitted by 80% or more inside the silicon substrate.
- the thickness of the semiconductor substrate 11 shown in FIG. 7 is 350 ⁇ m
- the melt processing region 13 is formed near the center of the semiconductor substrate 11, that is, at a portion of 175 ⁇ m from the surface.
- the transmittance is 90% or more with reference to a silicon wafer having a thickness of 200 ⁇ m. Therefore, the laser light L is hardly absorbed inside the semiconductor substrate 11 and almost all is transmitted.
- the laser beam L is condensing the laser beam L inside the silicon wafer under the conditions of 1 ⁇ 10 8 (W / cm 2 ) or more and a pulse width of 1 ⁇ s or less, the laser beam is absorbed locally at and near the focal point. Then, the melt processing region 13 is formed inside the semiconductor substrate 11.
- cracks may occur in the silicon wafer starting from the melt processing region.
- cracks are included in the melt treatment region.
- the cracks are formed over the entire surface in the melt treatment region, or only in a part or in a plurality of parts.
- the crack may grow naturally or may grow by applying a force to the silicon wafer.
- the melt processing region is formed inside the silicon wafer, and the melt processing region is formed inside the cut surface as shown in FIG. (2)
- the modified region includes a crack region
- the focusing point is set inside the object to be processed (for example, a piezoelectric material made of glass or LiTaO 3 ), and the electric field intensity at the focusing point is 1 ⁇ 10 8 (W / cm 2 ) or more and the pulse width is 1 ⁇ s or less.
- the laser beam L is irradiated under conditions.
- the magnitude of the pulse width is a condition that the laser beam L is absorbed inside the workpiece and a crack region is formed.
- a phenomenon called optical damage occurs inside the workpiece. This optical damage induces thermal strain inside the workpiece, thereby forming a crack region containing one or more cracks inside the workpiece. It can be said that the crack region is a dielectric breakdown region.
- FIG. 9 is a diagram showing experimental results of the relationship between the electric field strength and the crack size.
- the horizontal axis represents the peak power density. Since the laser beam L is a pulse laser beam, the electric field strength is represented by the peak power density.
- the vertical axis indicates the size of a crack portion (crack spot) formed inside the workpiece by one pulse of laser light L. Crack spots gather to form a crack region. The size of the crack spot is the size of the portion having the maximum length in the shape of the crack spot. Data indicated by black circles in the graph is for the case where the magnification of the condenser lens (C) is 100 times and the numerical aperture (NA) is 0.80.
- the data indicated by the white circles in the graph is when the magnification of the condenser lens (C) is 50 times and the numerical aperture (NA) is 0.55. From the peak power density of about 10 11 (W / cm 2 ), it can be seen that a crack spot is generated inside the workpiece, and the crack spot increases as the peak power density increases. (3) When the modified region includes a refractive index changing region
- the focusing point is set inside the object to be processed (for example, glass), and the laser beam L is irradiated under the condition that the electric field strength at the focusing point is 1 ⁇ 10 8 (W / cm 2 ) or more and the pulse width is 1 ns or less.
- the laser beam L is absorbed inside the object to be processed in a state where the pulse width is extremely short, the energy is not converted into thermal energy, and the ion valence change, crystallization occurs inside the object to be processed.
- a permanent structural change such as a polarization orientation is induced, and a refractive index change region is formed.
- the modified region includes the melt-processed region, the dielectric breakdown region, the refractive index change region, etc., and the mixed region thereof, and the density of the modified region in the material is compared with the density of the non-modified region. It may be a changed region or a region where lattice defects are formed. These can be collectively referred to as a high-density transition region.
- the area where the density of the melt-processed area, the refractive index changing area, the modified area is changed compared to the density of the non-modified area, and the area where lattice defects are formed are further divided into these areas and the modified area.
- cracks (cracks, microcracks) are included in the interface with the non-modified region.
- the included crack may be formed over the entire surface of the modified region, or may be formed in only a part or a plurality of parts.
- the modified region is formed as follows in consideration of the crystal structure of the object to be processed and its cleavage property, the object to be processed can be accurately cut.
- the orientation flat on the substrate along the direction in which the modified region is to be formed (for example, the direction along the (111) plane in the single crystal silicon substrate) or the direction perpendicular to the direction in which the modified region is to be formed. If this is formed, the modified region can be easily and accurately formed on the substrate by using the orientation flat as a reference.
- FIG. 10 is a plan view of a processing target to which the processing target cutting method according to the first embodiment is applied
- FIG. 11 is a partial cross-section along the planned cutting line of the processing target in FIG. FIG.
- a plate-like workpiece (second workpiece) 1 ⁇ / b> A includes an LTCC substrate 2 not containing an alkali metal and a device layer formed on the surface 2 a of the LTCC substrate 2. 4 and a glass layer 6 formed on the back surface 2 b of the LTCC substrate 2.
- the surface 4a of the device layer 4 is the surface (one end face) 1a of the workpiece 1A
- the back surface 6b of the glass layer 6 is the back face (the other end face) 1b of the workpiece 1A.
- the device layer 4 is a layer containing silicon and has a plurality of functional elements 15 arranged in a matrix.
- the functional element 15 is, for example, a semiconductor operation layer formed by crystal growth, a light receiving element such as a photodiode, a light emitting element such as a laser diode, or a circuit element formed as a circuit.
- the scheduled cutting lines 5 for cutting the workpiece 1A into a plurality of chips are set in a lattice shape so as to pass between adjacent functional elements 15.
- the glass layer 6 is a layer made of glass containing alkali metal such as # 7740, and is formed to a thickness of about 400 nm by, for example, a sputtering method.
- the glass layer 6 is patterned in a lattice shape so as to include the planned cutting line 5 when viewed from the thickness direction of the workpiece 1A.
- the processing object cutting method according to the first embodiment is applied to the processing object 1A configured as described above as follows.
- a plate-shaped workpiece for cutting including a silicon substrate 12 whose main surfaces (that is, the front surface 12a and the back surface 12b) are (100) surfaces.
- (Object) 10A is prepared.
- the cutting object 10A is composed only of the silicon substrate 12
- the surface 12a of the silicon substrate 12 is the surface (one end face) 10a of the cutting object 10A
- the back surface 12b of the silicon substrate 12 is for cutting. It becomes the back surface (the other end surface) 10b of the workpiece 10A.
- the front surface 10a of the workpiece 10A for cutting and the back surface 1b of the workpiece 1A are directly joined.
- the back surface 1b of the workpiece 1A is opposed to the main surface of the silicon substrate 12.
- the front surface 10a of the workpiece 10A for cutting and the back surface 1b of the workpiece 1A are joined by anodic bonding. That is, with the surface 10a of the workpiece 10A for cutting and the back surface 1b of the workpiece 1A in contact with each other, the workpiece 10A for cutting is applied to the workpiece 1A while being heated to 300 ° C. or higher. A positive voltage of several hundred V to several kV is applied. Thereby, electrostatic attraction is generated between the workpiece 10A for cutting and the workpiece 1A, and the surface 10a of the workpiece 10A for cutting and the back surface 1b of the workpiece 1A are joined by covalent bonding.
- alkali metal ions in the glass layer 6 of the workpiece 1A move to the cutting workpiece 10A, and the back surface 6b of the glass layer 6 is negatively charged (polarization).
- the dividing workpiece 10A side is positive, an electrostatic attractive force is generated between the dividing workpiece 10A and the workpiece 1A, and they are attracted to contact at the atomic level.
- surplus oxygen atoms are released as oxygen gas on the surface 10a of the workpiece 10A for cutting and the back surface 1b of the workpiece 1A, the remaining oxygen atoms are released from the silicon atoms and the glass layer 6 of the silicon substrate 12.
- the silicon atoms are shared, and the surface 10a of the workpiece 10A for cutting and the back surface 1b of the workpiece 1A are firmly bonded.
- the workpieces 1A and 10A are fixed on a support base (not shown) of the laser processing apparatus with the back surface 10b of the workpiece 10A for cutting being on the upper side.
- segmentation is made into a laser beam incident surface, the condensing point P is set inside the silicon substrate 12, and the laser beam L is irradiated, By the movement, the condensing point P is relatively moved along each scheduled cutting line 5.
- the relative movement of the condensing point P along each of the scheduled cutting lines 5 is performed a plurality of times with respect to one scheduled cutting line 5, but the distance between the position where the converging points P are aligned and the back surface 10 b is determined each time.
- a plurality of rows of melt processing regions 13 are formed in the silicon substrate 12 one by one with respect to one cutting scheduled line 5 in order from the surface 10a side.
- the crack 17 generated in the thickness direction of the workpiece 10A for cutting is started from the melting region 13 and reaches the back surface 10b of the workpiece 10A for cutting along the planned cutting line 5.
- the number of rows of the melt processing regions 13 to be formed for one scheduled cutting line 5 varies depending on the thickness or the like of the workpiece 10A for cutting.
- the dividing workpiece 10A is relatively thin, and the crack 17 reaches the rear surface 10b of the dividing workpiece 10A by forming one row of the melt processing region 13 for one scheduled cutting line 5. If it can be made, it is not necessary to form a plurality of rows of melt processing regions 13 for one cutting scheduled line 5.
- an expanding tape (holding member) 21 is attached to the back surface 10b of the cutting object 10A.
- the expanded tape 21 is expanded and a stress is produced in 10 A of process objects for a division
- the crack 17 is made to reach the surface 1a of the workpiece 1A along the planned cutting line 5 through the glass layer 6 patterned in a lattice shape, and the processing target 1A is cut along the planned cutting line 5 To do.
- the chip 19 having one functional element 15 is obtained. More specifically, in the state where the expanded tape 21 is expanded and the cut workpieces 1A are separated from each other, the workpieces cut so as to cover the functional element 15 side of all the workpieces 1A. Attach the holding tape to 1A. Then, the expanded tape 21 is peeled from the cut object 10A for cutting. That is, all the cut objects 1A and 10A are transferred from the expanded tape 21 to the holding tape. Then, the cut workpieces 1A and 10A are immersed in an etching solution such as an HF solution while being attached to the holding tape.
- an etching solution such as an HF solution
- the glass layer 6 is selectively removed by etching, and the cut workpiece 10A for separation is peeled from the cut workpiece 1A.
- the bonding and peeling glass layer 6 is patterned in a lattice shape.
- the glass layer 6 may be formed on the entire surface.
- patterning facilitates etching and the processing time is shortened, patterning is advantageous.
- the main surface of the silicon substrate 12 is the (100) surface. Therefore, the crack 17 generated from the melting processing region 13 is extended in the cleavage target object 10A in the cleavage direction of the silicon substrate 12 (that is, the direction orthogonal to the main surface of the silicon substrate 12).
- the back surface 1b of the workpiece 1A and the surface 10a of the cutting workpiece 10A are joined by anodic bonding. Therefore, the crack 17 extending in the direction orthogonal to the main surface of the silicon substrate 12 in the workpiece 10A for cutting is continuously at the interface between the surface 10a of the workpiece 10A for cutting and the back surface 1b of the workpiece 1A. In addition, it is reliably transmitted to the workpiece 1A without changing its direction, and reaches the surface 1a of the workpiece 1A.
- the crack 17 generated from the melting region 13 reaches the back surface 10b of the workpiece 10A for cutting. Therefore, only by expanding the expanded tape 21 attached to the back surface 10b of the workpiece 10A for cutting, the crack 17 generated from the melting region 13 is easily extended to the workpiece 1A side.
- the fusion processing region 13 is formed inside the silicon substrate 12 of the cutting target 10A along the scheduled cutting line 5 of the processing target 1A, no cutting starting point is formed on the processing target 1A. However, the workpiece 1A can be accurately cut along the scheduled cutting line 5. And since the fusion process area
- substrate 2 which does not contain an alkali metal is used for the process target object 1A by forming the glass layer 6 containing an alkali metal
- the surface 10a of the process target object 10A and the process target object 1A The back surface 1b can be bonded by anodic bonding.
- the device layer 4 when the device layer 4 is formed on the surface 2a of the LTCC substrate 2, the device layer 4 can be prevented from being contaminated by alkali metal.
- the laser beam L is irradiated to the cutting object 10A with the back surface 10b of the cutting object 10A as the laser light incident surface.
- the straightness of the crack 17 extending in the direction orthogonal to the main surface of the silicon substrate 12 in the dividing workpiece 10A is further enhanced. be able to.
- the crack 17 extending in the direction orthogonal to the main surface of the silicon substrate 12 in the workpiece 10A for cutting is continuous at the interface between the surface 10a of the workpiece 10A for cutting and the back surface 1b of the workpiece 1A. In addition, it is more reliably transmitted to the workpiece 1A without changing its direction.
- FIG. 15 is a partial cross-sectional view along a scheduled cutting line of a workpiece to which the workpiece cutting method according to the second embodiment is applied.
- a plate-like workpiece (second workpiece) 1B includes an LTCC substrate 2 that does not contain an alkali metal, and a device layer 4 formed on the surface 2a of the LTCC substrate 2. It is equipped with.
- the device layer 4 has a plurality of functional elements 15 arranged in a matrix, and the planned cutting lines 5 are set in a lattice shape so as to pass between adjacent functional elements 15.
- the surface 4a of the device layer 4 becomes the surface (the other end face) 1a of the workpiece 1B
- the back surface 2b of the LTCC substrate 2 becomes the back face (one end face) 1b of the workpiece 1B.
- the processing object cutting method according to the second embodiment is applied to the processing object 1A configured as described above as follows.
- the surface 12a of the silicon substrate 12 becomes the surface (the other end face) 10a of the cutting object 10B
- the back surface 6b of the glass layer 6 becomes the back face (one end face) 10b of the cutting object 10B.
- the glass layer 6 is a layer made of glass containing alkali metal, such as # 7740, and is formed to a thickness of about 400 nm by, for example, a sputtering method.
- the glass layer 6 is patterned in a lattice shape so as to include the planned cutting line 5 when viewed from the thickness direction of the dividing workpiece 10B when direct bonding described later is performed.
- the back surface 10b of the workpiece 10B for cutting and the surface 1a of the workpiece 1B are joined by anodic bonding. Thereby, the surface 1a of the workpiece 1B faces the main surface of the silicon substrate 12.
- the expanded tape 21 is attached to the surface 10a of the workpiece 10B for cutting.
- the expanded tape 21 is expanded and a stress is produced in the workpiece 10B for a parting. That is, a force is applied to the object to be cut through the expanded tape (holding member).
- the crack 17 is made to reach the back surface 1b of the workpiece 1B along the planned cutting line 5 through the glass layer 6 patterned in a lattice shape, and the processing target 1B is cut along the planned cutting line 5 To do.
- the chip 19 having one functional element 15 is obtained. More specifically, all the cut workpieces 1B and 10B are transferred from the expanded tape 21 to the holding tape. And the cut
- etching liquids such as HF solution
- FIG. 19 is a partial cross-sectional view along a scheduled cutting line of a workpiece to which the workpiece cutting method according to the third embodiment is applied.
- a plate-like workpiece (second workpiece) 1C includes an LTCC substrate 2 that does not contain an alkali metal, and a device layer 4 formed on the surface 2a of the LTCC substrate 2. It is equipped with.
- the device layer 4 has a plurality of functional elements 15 arranged in a matrix, and the planned cutting lines 5 are set in a lattice shape so as to pass between adjacent functional elements 15.
- the surface 4a of the device layer 4 becomes the surface (one end face) 1a of the workpiece 1C
- the back surface 2b of the LTCC substrate 2 becomes the back face (the other end face) 1b of the workpiece 1C.
- the workpiece cutting method according to the third embodiment is applied to the workpiece 1C configured as described above as follows.
- a plate-shaped object to be cut including a silicon substrate 12 whose main surfaces (that is, the front surface 12a and the back surface 12b) are (100) surfaces.
- Object 10C is prepared.
- the cutting object 10C is composed only of the silicon substrate 12
- the surface 12a of the silicon substrate 12 is the surface (one end face) 10a of the cutting object 10C
- the back surface 12b of the silicon substrate 12 is for cutting. It becomes the back surface (the other end surface) 10b of the workpiece 10C.
- the surface 10a of the workpiece 10C for cutting (that is, the surface 12a of the silicon substrate 12) functions when viewed from the thickness direction of the workpiece 10C for cutting when direct bonding described later is performed.
- Recesses 14 arranged in a matrix are formed so as to face the elements 15.
- the remaining portions 16 that partition the adjacent concave portions 14 are in a lattice shape so as to include the scheduled cutting lines 5 when viewed from the thickness direction of the workpiece 10C for cutting when direct joining described later is performed. It is patterned.
- a separation (peeling) melting treatment region 18 is formed in a planar shape.
- the front surface 10a of the workpiece 10C for cutting and the back surface 1b of the workpiece 1C are directly joined.
- the back surface 1b of the workpiece 1C faces the main surface of the silicon substrate 12.
- the front surface 10a of the workpiece 10C for cutting and the back surface 1b of the workpiece 1C are joined by surface activated direct joining.
- the surface 10a of the workpiece 10C for cutting and the back surface 1b of the workpiece 1C are irradiated with an inert gas ion beam or the like to remove oxides or adsorbed molecules.
- the atoms exposed on the surface 10a of the workpiece 10C for cutting and the back surface 1b of the workpiece 1C lose some of the bonding partners that form chemical bonds, and have strong bonding strength to other atoms. It will have a state. In this state, when the surface 10a of the workpiece 10C for cutting and the back surface 1b of the workpiece 1C are brought into contact with each other, the surface 10a and the back surface 1b are firmly bonded.
- the expanded tape 21 is attached to the back surface 10b of the cutting object 10C.
- the expanded tape 21 is expanded and a stress is produced in the workpiece 10C for a parting. That is, a force is applied to the object to be cut through the expanded tape (holding member).
- the crack 17 is made to reach the surface 1a of the workpiece 1C along the planned cutting line 5 through the remaining portion 16 patterned in a lattice shape, and the processing target 1C is cut along the planned cutting line 5 To do.
- the chip 19 having one functional element 15 is obtained by removing the cut workpiece 10C from the cut workpiece 1C. More specifically, all the cut workpieces 1C and 10C are transferred from the expanded tape 21 to the holding tape. And the cut
- the workpiece cutting method according to the third embodiment along the planned cutting line 5 of the workpiece 1C, as in the workpiece cutting method according to the first embodiment described above. If the melt processing region 13 is formed inside the silicon substrate 12 of the workpiece 10C for cutting, the workpiece 1C is cut along the planned cutting line 5 without forming any starting point of cutting on the workpiece 1C. Can be cut accurately.
- an example of formation of the fusion processing region 18 for separation with respect to the workpiece 10C for cutting is as follows. That is, as shown in FIG. 23 (a), the cutting object 10C is rotated around its central axis CL. Then, as shown in FIGS. 23A to 23D, the surface 10a of the cutting object 10C is used as the laser light incident surface, and the condensing point P is set near the surface 12a of the silicon substrate 12 so that the laser light L is emitted. While irradiating, the condensing point P is relatively moved from the outer edge portion to the center portion of the cutting object 10C. As a result, the separation melting treatment region 18 is formed in a planar shape in the vicinity of the surface 10a of the workpiece 10C for cutting (that is, the surface 12a of the silicon substrate 12).
- the back surface 10b of the cutting object 10C may be a laser light incident surface, or the focusing point P may be relatively moved from the center of the cutting object 10C toward the outer edge.
- the formation of the concave portion 14 for the dividing workpiece 10C may be performed before or after the separation melt processing region 18 is formed on the dividing workpiece 10C.
- the melting processing region 18 for separation may be formed in the workpiece 10C for cutting.
- FIG. 24 is a partial cross-sectional view along a scheduled cutting line of a workpiece to which the workpiece cutting method according to the fourth embodiment is applied.
- a plate-like workpiece (second workpiece) 1D has the same configuration as the workpiece 1C of the third embodiment described above.
- the surface 4a of the device layer 4 is the surface (the other end surface) 1a of the processing object 1D
- the back surface 2b of the LTCC substrate 2 is the back surface (the one end surface) 1b of the processing object 1D.
- the processing object cutting method according to the fourth embodiment is applied to the processing object 1D configured as described above as follows.
- Object 10D is prepared.
- the cutting object 10D is composed only of the silicon substrate 12
- the surface 12a of the silicon substrate 12 is the surface (the other end face) 10a of the cutting object 10D
- the back surface 12b of the silicon substrate 12 is for cutting. It becomes the back surface (one end surface) 10b of the workpiece 10D.
- the back surface 10b (that is, the back surface 12b of the silicon substrate 12) of the dividing workpiece 10D functions when viewed from the thickness direction of the dividing workpiece 10D when direct bonding described below is performed.
- Recesses 14 arranged in a matrix are formed so as to face the elements 15.
- the remaining portion 16 that partitions the adjacent recesses 14 has a lattice shape so as to include the planned cutting line 5 when viewed from the thickness direction of the workpiece 10D for cutting when direct joining described later is performed. It is patterned.
- the remaining portion 16 is formed with a separation melting processing region 18 in a planar shape.
- the back surface 10b of the workpiece 10D for cutting and the surface 1a of the workpiece 1D are joined by surface activated direct joining.
- the surface 1a of the workpiece 1D is opposed to the main surface of the silicon substrate 12.
- the expanding tape 21 is attached to the surface 10a of the workpiece 10D for cutting.
- the expand tape 21 is expanded and a stress is produced in the workpiece 10D for a parting. That is, a force is applied to the object to be cut through the expanded tape (holding member).
- the crack 17 is made to reach the back surface 1b of the workpiece 1D along the planned cutting line 5 through the remaining portion 16 patterned in a lattice pattern, and the processing target 1D is cut along the planned cutting line 5 To do.
- the chip 19 having one functional element 15 is obtained by removing the cut workpiece 10D from the cut workpiece 1D. More specifically, all the cut objects 1D and 10D are transferred from the expanded tape 21 to the holding tape. And the cut
- etching liquids such as a KOH solution
- FIG. 28 is a partial cross-sectional view taken along a planned cutting line of a workpiece for cutting to which the workpiece cutting method according to the fifth embodiment is applied.
- a plate-shaped workpiece for cutting including the silicon substrate 12 whose main surfaces (that is, the front surface 12a and the back surface 12b) are (100) planes. 10E is prepared.
- the cutting object 10E is composed only of the silicon substrate 12, the surface 12a of the silicon substrate 12 becomes the surface (one end face) 10a of the cutting object 10E, and the back surface 12b of the silicon substrate 12 is for cutting. It becomes the back surface (the other end surface) 10b of the workpiece 10E.
- a separation melting processing region 18 is formed in a planar shape in the vicinity of the surface 10a of the workpiece 10E for cutting (that is, the surface 12a of the silicon substrate 12).
- the formation position of the separation melting processing region 18 is at least on the surface 12a side from the center position in the thickness direction of the silicon substrate 12.
- the shield layer 22 is formed on the surface 10a of the workpiece 10E for cutting. Then, a plurality of insulating resin layers 23 and a plurality of wiring layers 24 are alternately stacked on the shield layer 22, and finally, a connection terminal layer 25 is formed. As a result, a workpiece (second workpiece) 1E having a plurality of circuit modules 26 arranged in a matrix is formed.
- the scheduled cutting lines 5 for cutting the workpiece 1E into a plurality of chips are set in a lattice shape so as to pass between adjacent circuit modules 26.
- the surface 25a of the connection terminal layer 25 is the surface (one end surface) 1a of the workpiece 1E
- the back surface 22b of the shield layer 22 is the back surface (the other end surface) 1b of the workpiece 1E.
- the form in which the workpiece 1E is directly formed on the surface 10a of the workpiece 10E for cutting in this way is also included in what joins the surface 10a of the workpiece 10E for cutting and the back surface 1b of the workpiece 1E. It is. Thus, the back surface 1b of the workpiece 1E is opposed to the main surface of the silicon substrate 12.
- the expanded tape 21 is attached to the back surface 10b of the workpiece 10E for cutting.
- the expand tape 21 is expanded and a stress is produced in the workpiece 10E for a parting. That is, a force is applied to the object to be cut through the expanded tape (holding member). Thereby, the crack 17 is made to reach the surface 1a of the workpiece 1E along the scheduled cutting line 5, and the workpiece 1E is cut along the scheduled cutting line 5.
- the chip 19 corresponding to one circuit module 26 is obtained by removing the cut workpiece 10E from the cut workpiece 1E. More specifically, all the cut objects 1E and 10E are transferred from the expanded tape 21 to the holding tape. Then, the cut workpieces 1E and 10E are immersed in an etching solution such as a KOH solution while being attached to the holding tape. As a result, the part where the separation melt processing region 18 is formed in the parting object 10E for cutting is relatively quickly (selectively) removed by etching, and the parting part cut from the cut part 1E is cut. The workpiece 10E is peeled off.
- FIG. 32 is a partial cross-sectional view along a planned cutting line of a workpiece to which the workpiece cutting method according to the sixth embodiment is applied.
- the plate-like processing object (second processing object) 1 ⁇ / b> F includes a sapphire substrate 31 and a semiconductor layer 32 formed on the surface 31 a of the sapphire substrate 31.
- the semiconductor layer 32 has a plurality of functional elements 15 arranged in a matrix, and the planned cutting lines 5 are set in a lattice shape so as to pass between adjacent functional elements 15.
- the surface 32a of the semiconductor layer 32 becomes the surface (one end face) 1a of the workpiece 1F
- the back surface 31b of the sapphire substrate 31 becomes the back face (the other end face) 1b of the workpiece 1F.
- Each functional element 15 functions as an LED, and a buffer layer 33, an n-type GaN cladding layer 34, an InGaN / GaN active layer 35, a p-type GaN cladding layer 36, and a p-type translucent electrode layer 37 are formed on a sapphire substrate. The layers are stacked in this order from the 31st side.
- a p-type electrode 38 is formed in a partial region on the p-type translucent electrode layer 37, and an n-type electrode 39 is formed in a partial region on the n-type GaN cladding layer 34.
- the processing object cutting method according to the sixth embodiment is applied to the processing object 1F configured as described above as follows.
- a plate-shaped object to be cut (first object to be processed) 10F including the silicon substrate 12 whose main surface (that is, the front surface 12a and the back surface 12b) is the (100) surface is prepared.
- the cutting object 10F consists of only the silicon substrate 12
- the surface 12a of the silicon substrate 12 becomes the surface (one end face) 10a of the cutting object 10F
- the back surface 12b of the silicon substrate 12 is for cutting. It becomes the back surface (the other end surface) 10b of the workpiece 10F.
- separation is formed in planar shape in the surface 10a (namely, surface 12a of the silicon substrate 12) vicinity of the workpiece 10F for a division
- the formation position of the separation melting processing region 18 is at least on the surface 12a side from the center position in the thickness direction of the silicon substrate 12.
- the surface 10a of the workpiece 10F for cutting and the back surface 1b of the workpiece 1F are joined by surface activated direct joining. Thereby, the back surface 1b of the workpiece 1F is opposed to the main surface of the silicon substrate 12.
- the back surface 10b of the workpiece 10F for cutting is used as the laser beam incident surface, and the laser beam L is irradiated with the focusing point P inside the silicon substrate 12, so that one cutting scheduled line 5 is irradiated.
- a plurality of rows of melt processing regions 13 are formed inside the silicon substrate 12.
- the crack 17 generated in the thickness direction of the cutting object 10F from the melting processing region 13 is caused to reach the back surface 10b of the cutting object 10F along the scheduled cutting line 5.
- the expanded tape 21 is attached to the back surface 10b of the workpiece 10F for cutting. Then, the expand tape 21 is expanded to generate stress on the cutting object 10F. That is, a force is applied to the object to be cut through the expanded tape (holding member). Thereby, the crack 17 is made to reach the surface 1a of the workpiece 1F along the planned cutting line 5, and the workpiece 1F is cut along the planned cutting line 5.
- the workpiece cutting method according to the sixth embodiment along the planned cutting line 5 of the workpiece 1F, as with the workpiece cutting method according to the first embodiment described above. If the melt processing region 13 is formed inside the silicon substrate 12 of the workpiece 10F for cutting, the workpiece 1F is cut along the planned cutting line 5 without forming any starting point of cutting on the workpiece 1F. Can be cut accurately. Since the cut surface of the obtained LED chip 42A has no irregularities such as the melt-processed region 13, the bending strength of the LED chip 42A can be improved, and the light extraction from the end surface of the LED chip 42A is possible. Efficiency can be improved.
- the cut workpiece 10F is removed from the cut workpiece 1F, and the heat sink 41 is attached to the back surface 31b of the cut sapphire substrate 31.
- the heat sink 41 approaches the active layer 35 by the amount by which the cut parting object 10F has been removed, so that the cooling efficiency of the LED chip 42A can be improved.
- the heat sink 41 is attached to the back surface 10b of the cut processing target object 10F.
- the LED chip 42B having one functional element 15 may be obtained by attaching.
- the cut workpiece 10F for cutting is a reflective layer for the light generated in the active layer 35, the light emission intensity of the LED chip 42B can be improved.
- the back surface 9b of the glass substrate 9 having a thickness of 0.5 mm was bonded to the front surface 12a of the silicon substrate 12 having a thickness of 1 mm by anodic bonding.
- the planned cutting lines 5 are set so as to cut the glass substrate 9 into 2 mm ⁇ 2 mm square chips, and 18 rows of melt processing regions 13 are formed inside the silicon substrate 12 with respect to one scheduled cutting line 5. did.
- the melt processing region 13 is also formed along the planned cutting line 5 in the direction perpendicular to the paper surface.
- the crack 17 generated in the thickness direction of the silicon substrate 12 starting from the melt processing region 13 reaches the back surface 12b of the silicon substrate 12, but does not reach the front surface 12a of the silicon substrate 12. . That is, the front end 17 a of the crack 17 on the surface 12 a side is separated from the surface 12 a inside the silicon substrate 12. Then, tensile stress is generated in the portion 90b on the back surface 9b side of the glass substrate 9 along the planned cutting line 5, and compressive stress is generated in the portion 90a on the surface 9a side of the glass substrate 9 along the planned cutting line 5. It was.
- FIG. 34 (b) is a photograph immediately after the crack 17 enters the glass substrate 9, and the crack 17 extending in the direction perpendicular to the main surface in the silicon substrate 12 is thus the surface of the silicon substrate 12. It was transmitted to the glass substrate 9 continuously at the interface between 12a and the back surface 9b of the glass substrate 9 with almost no change in its direction.
- FIG. 35 is a view showing a photograph of the silicon substrate and the glass substrate cut by the above embodiment.
- FIG. 35A when the cut silicon substrate 12 and the glass substrate 9 are viewed from the surface 9a side of the glass substrate 9, as shown in FIG. Even when 12 and the glass substrate 9 are viewed from the side, it can be seen that the glass substrate 9 is cut along the scheduled cutting line 5 with high accuracy.
- the cut surface of the silicon substrate 12 and the cut surface of the glass substrate 9 are continuous in parallel to the thickness direction with almost no deviation.
- FIG. 36 is a view showing a photograph of a silicon substrate and an LTCC substrate cut according to another embodiment.
- the back surface 2b of the LTCC substrate 2 having a size of 20 mm ⁇ 20 mm and a thickness of 0.3 mm was bonded to the front surface 12a of the silicon substrate 12 having a size of 25 mm ⁇ 25 mm and a thickness of 1 mm by anodic bonding.
- the planned cutting line 5 is set so as to cut the LTCC substrate 2 into 2 mm ⁇ 2 mm square chips, and 18 rows of the melt processing regions 13 are formed inside the silicon substrate 12 with respect to one planned cutting line 5. did.
- a crack generated in the thickness direction of the silicon substrate 12 starting from the melt processing region 13 was caused to reach the back surface 12 b of the silicon substrate 12.
- FIG. 36A shows a state in which the LTCC substrate 2 is cut following the cutting of the silicon substrate 12.
- the cut silicon substrate 12 and the LTCC substrate 2 are cut as seen from the surface 2a side of the LTCC substrate 2 as shown in FIG. 36 (c). Even when the silicon substrate 12 and the LTCC substrate 2 are viewed from the side surface side, it can be seen that the LTCC substrate 2 is cut along the scheduled cutting line 5 with high accuracy.
- the cut surface of the silicon substrate 12 and the cut surface of the LTCC substrate 2 are continuous in parallel in the thickness direction with almost no deviation.
- the cleavage direction is a direction of 53.7 ° with respect to the main surface. Therefore, in order to extend a crack generated in the silicon substrate starting from the melt processing region in a direction perpendicular to the main surface, a silicon substrate having a main surface of (100) is used as a workpiece for cutting. Compared to the above, increase the number of rows of the melt processing area formed for one scheduled cutting line, or form the melt processing area closer to the interface between the workpiece to be cut and the workpiece to be cut. It is necessary to do.
- a back surface of the workpiece (a laminate of a structure, circuit, or device, etc.
- the workpiece to be cut is joined to the surface opposite to the formed surface), the modified region is not formed on the workpiece, and the modified region is formed on the workpiece to be cut by the laser beam.
- a crack (crack) generated in the workpiece for cutting is extended to the workpiece, and the workpiece is cut. Therefore, the quality of the cut surface of the workpiece is very high (clean) and the bending strength of the chip is also very high.
- the present invention is not limited to the embodiment described above.
- the joining of the workpiece for cutting and the workpiece to be cut is not limited to anodic bonding or surface activated direct joining, and may be the following joining. That is, direct bonding by high temperature heating or bonding using liquid crystal wax, adhesive, solder, or the like.
- direct joining by high temperature heating the joining surface of the workpiece to be cut and the joining surface of the workpiece to be cut are subjected to hydrophilic treatment with an oxidizing chemical, washed with water and dried, and then used for cutting. In this method, the bonding surface of the workpiece is brought into contact with the bonding surface of the workpiece to be cut, and in that state, heat treatment is performed to increase the bonding strength.
- the bonding using the liquid crystal wax is performed between the bonding surface of the workpiece to be cut and the bonding surface of the workpiece to be cut.
- liquid liquid crystal wax is interposed so as to have a predetermined thickness, and in this state, the liquid crystal wax is cooled and solidified.
- the liquid crystal wax is heated and melted as described in, for example, Japanese Patent Application Laid-Open No. 2008-153337. By doing so, the cut workpiece for cutting can be removed from the cut workpiece.
- liquid crystal wax, adhesive, solder, or the like may be interposed between the silicon substrate as the cutting target and the processing target as the cutting target. Some layers such as an oxide film may be interposed.
- the method of removing the cut workpiece from the cut workpiece is not limited to etching, and may be polishing of the cut workpiece or the like.
- etching if the portion to be removed by etching (the glass layer 6 or the remaining portion 16 of the silicon substrate 12) is patterned so as to include at least the planned cutting line 5, the cut workpiece is removed.
- the cut workpiece for cutting can be efficiently removed.
- the separation processing region 18 is formed on the parting object, the portion of the parting object on which the separation processing region 18 is formed is etched relatively quickly (selectively). Can be removed.
- an HF solution is used for glass etching
- KOH solution is used for silicon etching.
- the workpiece to be cut can be applied not only to a glass substrate, LTCC substrate, and silicon substrate, but also to a SiC substrate, a piezoelectric material substrate such as LiTaO 3, and a ceramic substrate that are difficult to cut.
- the size (area) of the workpiece to be cut (silicon substrate) and the workpiece to be cut may be larger, but at least the outermost periphery (outer edge) of the workpiece to be cut is the workpiece.
- the size (area) of the workpiece to be cut (silicon substrate) larger than the size (area) of the workpiece.
- Processing is performed by applying a force to the workpiece to be cut through a holding member such as an expand tape attached to the workpiece for cutting, and forming and extending cracks in all scheduled cutting lines of the workpiece. Since the object is cut, the larger the size of the parting object to be cut, the easier the force is applied along the planned cutting line even at a portion near the outer edge. This is particularly effective when the workpiece is cut using the expand of the holding member.
- the cutting target is larger than the processing target, the back surfaces of all the chips of the processing target are protected by the cutting target when the cutting target is separated (separated) from the processing target. There is also an effect.
- the interface or machining A minute modified region may be formed near the interface of the object.
- the separation melting treatment region 18 is formed in a portion of the remaining portion 16 that faces the planned cutting line 5. It is better not to form. That is, it is preferable to form the separation melting treatment region 18 in the remaining portion 16 except for the portion facing the planned cutting line 5. According to this, it is possible to prevent the laser light L from being prevented from being guided by the separation melting processing region 18 when the melting processing region 13 serving as a starting point of cutting is formed in the workpiece 10 for cutting. Further, it is possible to prevent the separation of the crack 17 extending from the melt processing region 13 from being hindered by the melting processing region 18 for separation.
- the processing object can be accurately cut along the scheduled cutting line regardless of the material of the processing object to be cut.
- the quality of the cut surface is very high (clean) and the chip is not bent. The strength is also very high.
- Processing object (second processing object), 2 ... LTCC substrate, 5 ... Planned cutting line, 7 ... Modified region, 9 ... Glass substrate, 10A, 10B, 10C, 10D, 10E, 10F ... Cutting object (first object), 12 ... Silicon substrate, 13 ... Melting area, 15 ... Functional element, 17 ... Crack, 19, 42A, 42B ... Chip, 21 ... expanded tape (holding member), L ... laser beam, P ... condensing point.
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Abstract
Description
(1)改質領域が溶融処理領域を含む場合
(2)改質領域がクラック領域を含む場合
(3)改質領域が屈折率変化領域を含む場合
[第1の実施形態]
[第2の実施形態]
[第3の実施形態]
[第4の実施形態]
[第5の実施形態]
[第6の実施形態]
Claims (10)
- 主面が(100)面となっているシリコン基板を備える板状の第1の加工対象物の一方の端面に、前記主面と対向するように板状の第2の加工対象物の他方の端面を接合する工程と、
前記第1の加工対象物にレーザ光を照射することにより、前記第2の加工対象物の切断予定ラインに沿って前記シリコン基板の内部に溶融処理領域を形成し、前記溶融処理領域を起点として発生した亀裂を前記切断予定ラインに沿って前記第1の加工対象物の他方の端面に到達させる工程と、
前記第1の加工対象物に応力を生じさせることにより、前記亀裂を前記切断予定ラインに沿って前記第2の加工対象物の一方の端面に到達させ、前記切断予定ラインに沿って前記第2の加工対象物を切断する工程と、を含むことを特徴とする加工対象物切断方法。 - 前記第1の加工対象物の前記一方の端面と前記第2の加工対象物の前記他方の端面とは、陽極接合によって接合されることを特徴とする請求項1記載の加工対象物切断方法。
- 前記第1の加工対象物の前記一方の端面と前記第2の加工対象物の前記他方の端面とは、表面活性化直接接合によって接合されることを特徴とする請求項1記載の加工対象物切断方法。
- 前記レーザ光は、前記第1の加工対象物の前記他方の端面をレーザ光入射面として前記第1の加工対象物に照射されることを特徴とする請求項1記載の加工対象物切断方法。
- 前記応力は、前記第1の加工対象物の前記他方の端面に取り付けられた拡張可能な保持部材が拡張させられることにより前記第1の加工対象物に生じさせられることを特徴とする請求項1記載の加工対象物切断方法。
- 前記シリコン基板の厚さは、前記第2の加工対象物の厚さよりも厚くなっていることを特徴とする請求項1記載の加工対象物切断方法。
- 前記第2の加工対象物は、複数の機能素子を有し、前記切断予定ラインは、隣り合う機能素子の間を通るように設定されることを特徴とする請求項1記載の加工対象物切断方法。
- 前記第2の加工対象物は、ガラス基板を備えることを特徴とする請求項1記載の加工対象物切断方法。
- 前記第2の加工対象物は、LTCC基板を備えることを特徴とする請求項1記載の加工対象物切断方法。
- 前記第2の加工対象物は、サファイア基板を備えることを特徴とする請求項1記載の加工対象物切断方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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Also Published As
Publication number | Publication date |
---|---|
US9302410B2 (en) | 2016-04-05 |
US20160167355A1 (en) | 2016-06-16 |
KR101802527B1 (ko) | 2017-11-28 |
CN102470550B (zh) | 2015-01-28 |
CN102470550A (zh) | 2012-05-23 |
EP2460634B1 (en) | 2022-05-11 |
EP2460634A1 (en) | 2012-06-06 |
KR20120039509A (ko) | 2012-04-25 |
US10315403B2 (en) | 2019-06-11 |
TW201117901A (en) | 2011-06-01 |
US20120111495A1 (en) | 2012-05-10 |
TWI527649B (zh) | 2016-04-01 |
JP5537081B2 (ja) | 2014-07-02 |
EP2460634A4 (en) | 2017-09-27 |
JP2011025611A (ja) | 2011-02-10 |
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