WO2011001987A1 - 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 - Google Patents
封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 Download PDFInfo
- Publication number
- WO2011001987A1 WO2011001987A1 PCT/JP2010/061075 JP2010061075W WO2011001987A1 WO 2011001987 A1 WO2011001987 A1 WO 2011001987A1 JP 2010061075 W JP2010061075 W JP 2010061075W WO 2011001987 A1 WO2011001987 A1 WO 2011001987A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sealing
- glass
- glass substrate
- material layer
- thermal expansion
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims abstract description 493
- 239000003566 sealing material Substances 0.000 title claims abstract description 263
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 355
- 238000007789 sealing Methods 0.000 claims abstract description 181
- 239000000463 material Substances 0.000 claims abstract description 131
- 239000000945 filler Substances 0.000 claims abstract description 123
- 239000005394 sealing glass Substances 0.000 claims abstract description 78
- 239000011358 absorbing material Substances 0.000 claims abstract description 27
- 239000006096 absorbing agent Substances 0.000 claims description 54
- 229910000166 zirconium phosphate Inorganic materials 0.000 claims description 13
- 229910052878 cordierite Inorganic materials 0.000 claims description 12
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000005365 phosphate glass Substances 0.000 claims description 12
- 229910052797 bismuth Inorganic materials 0.000 claims description 10
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 10
- QUBMWJKTLKIJNN-UHFFFAOYSA-B tin(4+);tetraphosphate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QUBMWJKTLKIJNN-UHFFFAOYSA-B 0.000 claims description 10
- 239000005361 soda-lime glass Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- -1 zirconium phosphate compound Chemical class 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 2
- 238000010304 firing Methods 0.000 abstract description 18
- 230000007547 defect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 233
- 238000012545 processing Methods 0.000 description 38
- 239000002245 particle Substances 0.000 description 27
- 239000000203 mixture Substances 0.000 description 25
- 239000000843 powder Substances 0.000 description 21
- 238000002844 melting Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 13
- 230000008018 melting Effects 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 11
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 11
- 239000011230 binding agent Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 229910006404 SnO 2 Inorganic materials 0.000 description 9
- 239000000654 additive Substances 0.000 description 9
- 239000011247 coating layer Substances 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000009477 glass transition Effects 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- 239000001913 cellulose Substances 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- 238000004031 devitrification Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 229940116411 terpineol Drugs 0.000 description 3
- 238000004017 vitrification Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229910018068 Li 2 O Inorganic materials 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- 239000012461 cellulose resin Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007712 rapid solidification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000002076 thermal analysis method Methods 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/26—Sealing together parts of vessels
- H01J9/261—Sealing together parts of vessels the vessel being for a flat panel display
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
- H01J2211/20—Constructional details
- H01J2211/34—Vessels, containers or parts thereof, e.g. substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
- H01J2211/20—Constructional details
- H01J2211/48—Sealing, e.g. seals specially adapted for leading-in conductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present invention relates to a glass member with a sealing material layer, an electronic device using the same, and a method for producing the same.
- a flat panel display device such as an organic EL display (Organic Electro-Luminescence Display: OELD), a plasma display panel (PDP), a liquid crystal display device (LCD), etc.
- a glass substrate for sealing are arranged opposite to each other, and a structure in which the display element is sealed with a glass package in which these two glass substrates are sealed is applied (see Patent Document 1).
- a solar cell such as a dye-sensitized solar cell, it has been studied to apply a glass package in which a solar cell element (photoelectric conversion element) is sealed with two glass substrates (see Patent Document 2).
- sealing glass excellent in moisture resistance and the like is being promoted as a sealing material for sealing between two glass substrates. Since the sealing temperature with the sealing glass is about 400 to 600 ° C., the characteristics of the electronic element portion of the OEL element or the dye-sensitized solar cell element deteriorate when fired in a heating furnace. Therefore, a sealing material layer (sealing glass material layer) containing a laser absorbing material is disposed between the sealing regions provided on the periphery of the two glass substrates, and this is irradiated with laser light to be heated and melted. Attempts have been made to form a sealing layer (see Patent Documents 1 and 2).
- Patent Document 2 describes a sealing material having a difference in thermal expansion coefficient from a glass substrate of 10 ⁇ 10 ⁇ 7 / ° C. or less. Sealing glass generally has a larger coefficient of thermal expansion than glass substrates, so low-expansion fillers such as silica, alumina, zirconia, and cordierite are added to the sealing glass together with a laser absorber to reduce the expansion of the sealing material. ing.
- glass packages constituting FPDs, solar cells and the like tend to be thinned, and for this purpose, it is required to narrow the gap (gap) between glass substrates, for example, to 15 ⁇ m or less.
- a low expansion filler or the like is blended in the sealing material, and it becomes necessary to make the filler particles finer as the interval between the substrates is reduced.
- the filler particles are made finer, the specific surface area is increased, and the shear stress between the sealing glass heated and melted with the laser beam and the filler particles is increased, and the flow is hardly generated.
- the purpose of the present invention is to suppress the occurrence of defects such as cracks and cracks in the glass substrate and the sealing layer even when the distance between the two glass substrates is narrowed.
- a glass member with a sealing material layer capable of increasing its reliability, and further, an electronic device with improved airtightness and its reliability by using such a glass member with a sealing material layer, and a method for manufacturing the same It is to provide.
- a glass member with a sealing material layer is formed on a glass substrate having a surface having a sealing region and the sealing region of the glass substrate, and has a thickness of 15 ⁇ m or less.
- a glass member with a sealing material layer comprising a sealing material layer, wherein the sealing material layer contains sealing glass, a laser absorber, and optionally a low expansion filler, and the laser absorber and the optional material It is made of a material obtained by firing a glass material for sealing whose total content with the low-expansion filler as a component is in the range of 2 to 44% by volume, and has a thermal expansion coefficient ⁇ 1 of the material of the sealing material layer, The difference from the thermal expansion coefficient ⁇ 2 of the glass substrate is in the range of 15 to 65 ( ⁇ 10 ⁇ 7 / ° C.).
- An electronic device includes a first glass substrate having a surface including a first sealing region, and a surface including a second sealing region corresponding to the first sealing region. , A second glass substrate disposed so that the surface faces the surface of the first glass substrate, and an electronic device provided between the first glass substrate and the second glass substrate Part and the first sealing region of the first glass substrate and the second sealing region of the second glass substrate so as to seal the electronic element part,
- An electronic device comprising a sealing layer having a thickness of 15 ⁇ m or less, wherein the sealing layer contains sealing glass, a laser absorber, and optionally a low expansion filler, and the laser absorber and the optional Sealing in which the total content of the component and the low expansion filler is in the range of 2 to 44% by volume Consists fused and fixed layer of the lath material, and with at least one of the thermal expansion coefficient alpha 2 of the thermal expansion coefficient alpha 1 and the first glass substrate and the second glass substrate material of the sealing layer The difference is in the range of 15 to 65 ( ⁇
- An electronic device manufacturing method includes a step of preparing a first glass substrate having a surface including a first sealing region, and a second sealing corresponding to the first sealing region.
- the sealing material layer is irradiated with laser light through the glass substrate or the second glass substrate, and the sealing material layer is melted and provided between the first glass substrate and the second glass substrate. Forming a sealing layer for sealing the formed electronic element portion.
- a method of manufacturing an electronic device wherein the sealing material layer contains sealing glass, a laser absorber, and optionally a low expansion filler, and the laser expansion material and an optional component are low expansion fillers And the first glass substrate, the thermal expansion coefficient ⁇ 1 of the material of the sealing material layer, and the first glass substrate, The difference from the thermal expansion coefficient ⁇ 2 of at least one of the second glass substrates is in the range of 15 to 65 ( ⁇ 10 ⁇ 7 / ° C.).
- the electronic device using the glass member, and the manufacturing method thereof the glass generated at the time of laser sealing even when the distance between the two glass substrates is reduced. Cracks and cracks in the substrate and the sealing layer can be suppressed. Therefore, it is possible to improve the sealing performance between the glass substrates and the reliability thereof, and to provide an electronic device with improved airtightness and the reliability with high reproducibility.
- FIG. 4 is a cross-sectional view taken along line AA in FIG. 3.
- FIG. 6 is a cross-sectional view taken along line AA in FIG. 5.
- FIG. 5 It is a figure which shows an example of the relationship between the distortion amount of the glass substrate laser-sealed using the sealing material layer whose thickness is 15 micrometers or less, and laser processing temperature (heating temperature).
- FIG. 1 is a diagram showing a configuration of an electronic device according to an embodiment of the present invention
- FIG. 2 is a diagram showing a manufacturing process of the electronic device according to an embodiment of the present invention
- FIGS. 3 and 4 are configurations of a first glass substrate used therefor
- FIG. 5 and FIG. 6 are diagrams showing the configuration of a second glass substrate used therefor.
- the electronic device 1 shown in FIG. 1 constitutes an illuminating device (such as OEL illumination) using a light emitting element such as an OPD, PDP, LCD, or other FPD, or a solar cell such as a dye-sensitized solar cell. To do.
- the electronic device 1 includes a first glass substrate 2 and a second glass substrate 3.
- the first and second glass substrates 2 and 3 are made of, for example, alkali-free glass or soda lime glass having various known compositions.
- the alkali-free glass has a thermal expansion coefficient of about 35 to 40 ( ⁇ 10 ⁇ 7 / ° C.).
- Soda lime glass has a thermal expansion coefficient of about 80 to 90 ( ⁇ 10 ⁇ 7 / ° C.).
- An electronic element unit 4 corresponding to the electronic device 1 is provided between the surface 2a of the first glass substrate 2 and the surface 3a of the second glass substrate 3 opposed thereto.
- the electronic element unit 4 is, for example, an OEL element for OELD or OEL illumination, a plasma light-emitting element for PDP, a liquid crystal display element for LCD, and a dye-sensitized solar cell element (dye-sensitized type for solar cells). Photoelectric conversion element).
- the electronic element unit 4 including a light emitting element such as an OEL element, a dye-sensitized solar cell element, and the like has various known structures.
- the electronic device 1 of this embodiment is not limited to the element structure of the electronic element unit 4.
- the first glass substrate 2 constitutes a glass substrate for elements, and an element structure such as an OEL element or a PDP element is formed as an electronic element portion 4 on the surface thereof.
- the second glass substrate 3 constitutes a glass substrate for sealing the electronic element part 4 formed on the surface of the first glass substrate 2.
- the configuration of the electronic device 1 is not limited to this.
- the electronic element unit 4 is a dye-sensitized solar cell element or the like
- a wiring film or an electrode film that forms an element structure on each of the surfaces 2a and 3a of the first and second glass substrates 2 and 3 is used.
- An element film is formed.
- An element film constituting the electronic element unit 4 and an element structure based thereon are formed on at least one of the surfaces 2a and 3a of the first and second glass substrates 2 and 3.
- the first seal is formed along the outer periphery of the element region 5 where the electronic element part 4 is formed.
- a stop region 6 is provided.
- the first sealing region 6 is provided so as to surround the element region 5.
- a second sealing region 7 corresponding to the first sealing region 6 is provided on the surface 3 a of the second glass substrate 3.
- the first and second sealing regions 6 and 7 serve as a sealing layer forming region (a sealing material layer forming region for the second sealing region 7).
- An element region is also provided on the surface 3a of the second glass substrate 3 as necessary.
- the first glass substrate 2 and the second glass substrate 3 are arranged so that the surface 2a having the element region 5 and the first sealing region 6 and the surface 3a having the second sealing region 7 are opposed to each other. They are arranged with a predetermined gap.
- a gap between the first glass substrate 2 and the second glass substrate 3 is sealed with a sealing layer 8. That is, the sealing layer 8 is formed between the sealing region 6 of the first glass substrate 2 and the sealing region 7 of the second glass substrate 3 so as to seal the electronic element unit 4.
- the electronic element unit 4 is hermetically sealed with a glass panel including a first glass substrate 2, a second glass substrate 3, and a sealing layer 8.
- the sealing layer 8 has a thickness T of 15 ⁇ m or less.
- a partial space remains between the first glass substrate 2 and the second glass substrate 3. Such a space may be left as it is, or may be filled with a transparent resin or the like.
- the transparent resin may be adhered to the glass substrates 2 and 3 or may simply be in contact with the glass substrates 2 and 3.
- a dye-sensitized solar cell element or the like is applied as the electronic element unit 4
- the electronic element unit 4 is disposed in the entire gap between the first glass substrate 2 and the second glass substrate 3. .
- the sealing layer 8 is a fusion fixing layer in which the sealing material layer 9 formed in the sealing region 7 of the second glass substrate 3 is melted with a laser beam and fixed to the sealing region 6 of the first glass substrate 2. It consists of That is, a frame-shaped sealing material layer 9 is formed in the sealing region 7 of the second glass substrate 3 used for manufacturing the electronic device 1 as shown in FIGS. The sealing material layer 9 formed in the sealing region 7 of the second glass substrate 3 is melted and fixed to the sealing region 6 of the first glass substrate 2 by the heat of the laser beam, thereby the first glass substrate. A sealing layer 8 that seals a space (element arrangement space) between 2 and the second glass substrate 3 is formed.
- the sealing material layer 9 is a layer formed by firing a layer of glass material for sealing formed in the sealing region 7 of the glass substrate 3.
- the glass material for sealing contains sealing glass, a laser absorber, and optionally a low expansion filler, and may contain additives other than these as required.
- the laser absorbing material and the low expansion filler are collectively referred to as a filler.
- the glass material for sealing contains sealing glass and a filler, and may further contain other additives as necessary.
- Other additives include fillers other than laser absorbers and low expansion fillers. However, as described later, as other additives, components that disappear during firing are excluded.
- the sealing glass material includes a low expansion filler in addition to the laser absorber as the filler.
- a low melting point glass such as tin-phosphate glass, bismuth glass, vanadium glass, lead glass and the like is used.
- tin-phosphate glass is used in consideration of sealing properties (adhesiveness) to glass substrates 2 and 3, reliability thereof (adhesion reliability and sealing properties), and influence on the environment and human body. It is preferable to use sealing glass made of bismuth glass.
- Tin-phosphate glass is composed of 20 to 68 mol% SnO, 0.5 to 5 mol% SnO 2 , and 20 to 40 mol% P 2 O 5 (basically a total amount). It is preferable to have a composition of 100 mol%. SnO is a component for lowering the melting point of glass. If the SnO content is less than 20 mol%, the viscosity of the glass will be high and the sealing temperature will be too high, and if it exceeds 68 mol%, it will not vitrify.
- SnO 2 is a component for stabilizing the glass.
- SnO 2 is a component for stabilizing the glass.
- SnO 2 is separated and precipitated in the glass that has been softened and melted during the sealing operation, the fluidity is impaired, and the sealing workability is lowered.
- SnO 2 exceeds 5 mol%, SnO 2 is likely to precipitate during melting of the low-melting glass.
- P 2 O 5 is a component for forming a glass skeleton.
- the content of P 2 O 5 is less than 20 mol%, the glass does not vitrify, and when the content exceeds 40 mol%, the weather resistance, which is a disadvantage specific to phosphate glass, may be deteriorated.
- the ratio (mol%) of SnO and SnO 2 in the glass frit can be determined as follows. First, after the glass frit (low melting point glass powder) is acid-decomposed, the total amount of Sn atoms contained in the glass frit is measured by ICP emission spectroscopic analysis. Next, since Sn 2+ (SnO) is obtained by acidimetric decomposition, the amount of Sn 2+ determined there is subtracted from the total amount of Sn atoms to obtain Sn 4+ (SnO 2 ).
- the glass formed of the above three components has a low glass transition point and is suitable for a low-temperature sealing material.
- a component that forms a glass skeleton such as SiO 2 , ZnO, B 2 O 3 , Al 2 O 3, WO 3, MoO 3, Nb 2 O 5, TiO 2, ZrO 2, Li 2 O, stabilizing Na 2 O, K 2 O, Cs 2 O, MgO, CaO, SrO, the glass BaO, etc.
- the component to be made may be contained as an optional component. However, if the content of any component is too large, the glass becomes unstable and devitrification may occur, and the glass transition point and softening point may increase. Therefore, the total content of any component is 30. It is preferable to make it mol% or less.
- the glass composition in this case is adjusted so that the total amount of the basic component and the optional component is basically 100 mol%.
- Bismuth-based glass (gas frit) is composed of 70 to 90 mass% Bi 2 O 3 , 1 to 20 mass% ZnO, and 2 to 12 mass% B 2 O 3 (basically, the total amount is 100 mass%) It is preferable to have a composition of Bi 2 O 3 is a component that forms a glass network.
- the content of Bi 2 O 3 is less than 70% by mass, the softening point of the low-melting glass becomes high and sealing at a low temperature becomes difficult.
- the content of Bi 2 O 3 exceeds 90% by mass, it becomes difficult to vitrify and the thermal expansion coefficient tends to be too high.
- ZnO is a component that lowers the thermal expansion coefficient and the like. Vitrification becomes difficult when the content of ZnO is less than 1% by mass. When the content of ZnO exceeds 20% by mass, stability during low-melting glass molding is lowered, and devitrification is likely to occur.
- B 2 O 3 is a component that forms a glass skeleton and widens the range in which vitrification is possible. When the content of B 2 O 3 is less than 2% by mass, vitrification becomes difficult, and when it exceeds 12% by mass, the softening point becomes too high, and even if a load is applied during sealing, sealing is performed at a low temperature. It becomes difficult.
- the glass formed of the above three components has a low glass transition point and is suitable for a low-temperature sealing material, but Al 2 O 3 , CeO 2 , SiO 2 , Ag 2 O, MoO 3 , Nb 2 O 5, Ta 2 O 5, Ga 2 O 3, Sb 2 O 3, Li 2 O, Na 2 O, K 2 O, Cs 2 O, CaO, SrO, BaO, WO 3, P 2 O 5, SnO x (X is 1 or 2) etc. may be contained. However, if the content of any component is too large, the glass becomes unstable and devitrification may occur, and the glass transition point and softening point may increase. Therefore, the total content of any component is 30. It is preferable to set it as mass% or less. The glass composition in this case is adjusted so that the total amount of the basic component and the optional component is basically 100% by mass.
- the glass material for sealing contains a laser absorber and a low expansion filler as fillers.
- the low expansion filler is an optional component and the low expansion filler does not necessarily have to be contained.
- the laser absorbing material is an essential component for heating and melting the sealing material layer 9 formed by firing a layer of glass material for sealing by laser light.
- the glass material for sealing contains a laser absorber as an essential component other than sealing glass, or contains a laser absorber and a low expansion filler.
- a compound such as at least one metal selected from Fe, Cr, Mn, Co, Ni and Cu or an oxide containing the metal is used. Also, other pigments may be used.
- the low expansion filler it is preferable to use at least one selected from silica, alumina, zirconia, zirconium silicate, cordierite, zirconium phosphate compound, soda lime glass, and borosilicate glass. Examples of the zirconium phosphate-based compound include (ZrO) 2 P 2 O 7 , NaZr 2 (PO 4 ) 3 , KZr 2 (PO 4 ) 3 , Ca 0.5 Zr 2 (PO 4 ) 3 , and NbZr (PO 4 ).
- a low expansion filler is a filler having a lower coefficient of thermal expansion than the sealing glass.
- the glass material for sealing may contain other fillers (for example, a filler having a thermal expansion coefficient equal to or higher than the thermal expansion coefficient of the sealing glass) in addition to the laser absorbing material and the low expansion filler. However, it is usually not necessary to use other fillers.
- the filler means a laser absorbing material and a low expansion filler, and the quantitative ratio of the filler refers to the ratio of the total amount of the laser absorbing material and the low expansion filler.
- the thickness T of the sealing material layer 9 is 15 ⁇ m or less, further 10 ⁇ m or less in order to narrow the substrate interval after sealing (the interval between the first glass substrate 2 and the second glass substrate 3). It is said that.
- the thickness T of the sealing material layer 9 is preferably 1 ⁇ m or more practically.
- the laser absorbing material or the low expansion filler as the filler is required to be finely divided.
- the maximum particle size of the filler particles needs to be at least less than the thickness T of the sealing material layer 9.
- the conventional glass material for sealing contains a relatively large amount of low expansion filler in order to reduce the difference from the thermal expansion coefficient of the glass substrates 2 and 3.
- the amount of the low expansion filler added to the sealing glass material is reduced.
- the total content of the low expansion filler and the laser absorber in the glass material for sealing is in the range of 2 to 44% by volume. If with a reduced content of low-expansion filler sealing glass material, a difference between the thermal expansion coefficient alpha 2 of the thermal expansion coefficient of the fired sealing glass material alpha 1 and the glass substrates 2 and 3 is increased naturally .
- the difference in thermal expansion between the sealing material layer made of the fired sealing glass material and the glass substrates 2 and 3 was considered to be a main factor such as cracking and cracking of the glass substrates 2 and 3 and the sealing layer 8.
- Conventional glass materials for sealing contain a relatively large amount of low expansion filler as described above.
- the fired sealing glass material which is a material constituting the sealing material layer 9 is also referred to as a sealing material.
- thermal expansion coefficient alpha 1 of the thermal expansion coefficient alpha 1 of the sealing material layer of the sealing material is also referred to as a sealing material.
- the sealing layer 8 is a layer made of a material in which the sealing glass material or the material of the sealing material layer 9 (fired sealing glass material) is melted and fixed. Usually, the sealing material layer 9 is melted. It is a layer formed by cooling. Even if the material (sealing material) of the sealing material layer 9 is once melted and cooled for sealing, the material of the sealing layer 8 and the material of the sealing material layer 9 change as materials. Is not considered to be practical. Thus, the thermal expansion coefficient of the material of the sealing layer 8 is equal to the thermal expansion coefficient alpha 1 of the aforementioned sealing material.
- the difference alpha is the thermal expansion coefficient alpha 2 of the thermal expansion coefficient alpha 1 and the glass substrates 2 and 3 of the sealing material
- [Delta] T is the temperature difference during laser sealing (sealing material layer 9 The temperature difference from the melting temperature (processing temperature) to the cooling to room temperature) divided by the cooling time
- E is the Young's modulus of the sealing material and the glass substrates 2 and 3
- ⁇ T is substantially the temperature difference during laser sealing.
- Conventional glass materials for sealing have mainly employed a technique for reducing the residual stress by reducing ⁇ in the formula (1) of the material after the laser sealing process.
- the thickness T of the sealing material layer 9 is reduced to 15 ⁇ m or less, and further to 10 ⁇ m or less, the value of ⁇ T is clearly affected. That is, when the laser processing temperature (heating temperature) is increased in order to increase the fluidity of the sealing material, the residual stress ⁇ increases remarkably.
- FIG. 7 shows an example of the relationship between the strain amount of a glass substrate laser-sealed using a thin sealing material layer 9 having a thickness T of 15 ⁇ m or less and the laser processing temperature (heating temperature).
- the strain amount of the glass substrate increases as the laser processing temperature rises, and this increases the residual stress of the glass substrate after the laser sealing step (heating / cooling step).
- the thickness T of the sealing material layer 9 is reduced to 15 ⁇ m or less, the influence of the shrinkage amount of the sealing material layer 9 is reduced, so that the glass substrates 2 and 3 and the sealing material layer 9
- the stress based on the difference in contraction amount (difference in thermal expansion) is smaller than when the film thickness T of the sealing material layer 9 is thick.
- the laser processing temperature is increased by reducing the difference in thermal expansion between the sealing material layer 9 and the glass substrates 2 and 3. It is important to suppress. This becomes more remarkable when the thickness T of the sealing material layer 9 is 10 ⁇ m or less. Therefore, in this embodiment, in order to reduce the laser processing temperature, the total content (filler content) of the low expansion filler and the laser absorber in the sealing glass material is set in the range of 2 to 44% by volume. Yes.
- the total content of the low expansion filler and the laser absorber in the sealing glass material is set to 44% by volume or less. If the total content of the low expansion filler and the laser absorber is 44% by volume or less, the effect of lowering the laser processing temperature (heating temperature) can be sufficiently obtained.
- the thermal expansion difference between the sealing material layer 9 and the glass substrates 2 and 3 is particularly affected by the reduced content of the low expansion filler.
- the laser processing temperature heating temperature
- the residual stress of the glass substrates 2 and 3 after the laser sealing is reduced, it becomes possible to suppress cracks and cracks of the glass substrates 2 and 3 and the sealing layer 8.
- the laser absorbing material is an essential component for performing the laser sealing step, and the content thereof is preferably in the range of 2 to 10% by volume with respect to the sealing glass material. If the content of the laser absorber is less than 2% by volume, the sealing material layer 9 may not be sufficiently melted during laser irradiation. This causes poor adhesion. On the other hand, when the content of the laser absorber exceeds 10% by volume, the second glass substrate 3 is cracked or sealed due to local heat generation near the interface with the second glass substrate 3 during laser irradiation. There is a possibility that the fluidity at the time of melting of the worn glass material is deteriorated and the adhesiveness with the first glass substrate 2 is lowered.
- the low expansion filler is preferably included in order to reduce the difference in thermal expansion between the sealing material layer 9 and the glass substrates 2 and 3, but the thin sealing material layer 9 has a thickness T of 15 ⁇ m or less. If the particle diameter is applicable to the above, it becomes a factor of lowering fluidity during laser processing, so that the content is preferably reduced. For this reason, it is preferable that content of a low expansion filler shall be 40 volume% or less with respect to the glass material for sealing. If the content of the low expansion filler exceeds 40% by volume, an increase in laser processing temperature is inevitable. In practice, the low expansion filler is preferably contained in an amount of 10% by volume or more, but the glass material for sealing may not contain the low expansion filler in some cases as described later.
- the difference between the thermal expansion coefficient alpha 2 of the thermal expansion coefficient alpha 1 and the glass substrates 2 and 3 of the sealing material layer 9 is larger Become.
- the difference in thermal expansion between the sealing material layer 9 and the glass substrates 2 and 3 is in the range of 15 to 65 ( ⁇ 10 ⁇ 7 / ° C.).
- the content of the low expansion filler is reduced to maintain the fluidity of the sealing material, and laser processing is performed based thereon.
- the thermal expansion coefficient alpha 2 of the thermal expansion coefficient alpha 1 and glass substrate 2 and 3 of the sealing material layer 9 shows a value measured with a push rod type heat expansion coefficient measurement apparatus, the thermal expansion coefficient alpha 1, temperature range for the measurement of alpha 2 is set to 50 ⁇ 250 ° C.. Further, the difference in thermal expansion between the sealing material layer 9 and the glass substrates 2 and 3 is a value obtained by subtracting a small value from any one (( ⁇ 1 - ⁇ 2 ) or ( ⁇ 2 - ⁇ 1 )). , and the magnitude relationship between the thermal expansion coefficient alpha 2 of the thermal expansion coefficient alpha 1 and the glass substrates 2 and 3 of the sealing material layer 9 may be either.
- the difference in thermal expansion between the sealing material layer 9 and the glass substrates 2 and 3 is less than 15 ⁇ 10 ⁇ 7 / ° C. because the sealing material contains a relatively large amount of low expansion filler. An increase in laser processing temperature is inevitable.
- the difference in thermal expansion between the sealing material layer 9 and the glass substrates 2 and 3 exceeds 65 ⁇ 10 ⁇ 7 / ° C., the shrinkage amount between the glass substrates 2 and 3 and the sealing material layer 9 is affected by the laser processing temperature. Since the influence of the difference becomes large, cracks and cracks of the glass substrates 2 and 3 and the sealing layer 8 are likely to occur even when the laser processing temperature is lowered.
- the difference in thermal expansion between the sealing material layer 9 and the glass substrates 2 and 3 is in the range of 65 ⁇ 10 ⁇ 7 / ° C. or less, the content of the low expansion filler in the sealing material is reduced. Can do. Furthermore, even when the sealing material does not contain a low expansion filler, the glass substrate 2 can be used if the difference in thermal expansion between the sealing material layer 9 and the glass substrates 2 and 3 is 65 ⁇ 10 ⁇ 7 / ° C. or less. 3 and cracks of the sealing layer 8 can be suppressed.
- the sealing material may contain at least a laser absorbing material as a filler, and the content of the low expansion filler may be zero. For this reason, the total content of the low expansion filler and the laser absorber in the sealing glass material may be 2% by volume or more, which is the lower limit of the content of the laser absorber.
- the thermal expansion difference between the sealing material layer 9 and the glass substrates 2 and 3 is 50 ⁇ 10. It is preferably ⁇ 7 / ° C. or lower, more preferably 35 ⁇ 10 ⁇ 7 / ° C. or lower. From such a point, it is preferable that the glass material for sealing contains a low expansion filler in the range of 10 volume% or more.
- the sealing material obtained by baking the sealing glass material containing the laser absorbing material in the range of 2 to 10% by volume and the low expansion filler in the range of 10 to 40% by volume Since the laser processing temperature can be lowered while reducing the difference in shrinkage between the glass substrates 2 and 3 and the sealing material layer 9, it contributes to improving the reliability of the sealing property.
- the fluidity of the sealing material and the laser processing temperature set based on it affect not only the filler content (laser absorber or low expansion filler) in the sealing material but also the particle shape of the filler. Is done. As described above, at least the maximum particle size of the filler particles needs to be less than the thickness T of the sealing material layer 9. In addition, it is preferable to reduce the specific surface area of the filler particles. Specifically, the surface area of the filler in the sealing glass material is preferably in the range of 0.5 to 6 m 2 / cm 3 . The surface area of the filler in the sealing glass material is a value represented by [(specific surface area of filler) ⁇ (specific gravity of filler) ⁇ (content of filler (volume%))].
- a sealing glass material including a laser absorbing material and a low expansion filler their total surface area in the sealing glass material is “(specific surface area of laser absorber) ⁇ (specific gravity of laser absorber) ⁇ (Content of laser absorber (volume%)) + (specific surface area of low expansion filler) ⁇ (specific gravity of low expansion filler) ⁇ (content of low expansion filler (volume%))].
- the surface area of the filler in the glass material for sealing in the range of 0.5 to 6 m 2 / cm 3 , the fluidity of the sealing material can be further improved and the laser processing temperature can be further lowered.
- the surface area of the filler particles described above can be satisfied by controlling the particle size distribution of the low expansion filler or the laser absorber. Specifically, when preparing a low expansion filler or a laser absorbing material, each powder can be obtained by classification by sieving or wind separation.
- the electronic device 1 of the above-described embodiment is manufactured as follows, for example. First, as shown in FIGS. 2A, 5, and 6, a sealing material layer 9 is formed on the sealing region 7 of the second glass substrate 3. In forming the sealing material layer 9, first, the total content of the low expansion filler and the laser absorbing material is in the range of 2 to 44% by volume, and based on this, the difference in thermal expansion between the glass substrates 2 and 3 is 15%.
- a glass material for sealing is prepared so as to have a sealing material layer in a range of ⁇ 65 ⁇ 10 ⁇ 7 / ° C.
- the glass material for sealing contains a sealing glass, a laser absorber, and optionally a low expansion filler, and further comprises a composition containing additives other than these as required.
- disappeared from a composition by volatilization or a burning-off in the case of baking among an additive are remove
- a component that disappears from the composition due to volatilization or burning during firing is an additive that is usually essential in order to form a layer of a glass material for sealing on the surface of the glass substrate by coating or the like.
- the disappearing component is not a component constituting the sealing material, it is not a constituent component of the sealing glass material, and the composition ratio of the constituent component is a constituent ratio excluding the disappearing component.
- the composition ratio of the component burned away by firing is determined in consideration of the composition ratio of the component remaining after firing and the characteristics such as coating properties required for the sealing material paste.
- the sealing material paste is prepared by mixing each component of the glass material for sealing and the vehicle.
- the vehicle is obtained by dissolving a resin as a binder component in a solvent.
- the resin for the vehicle include cellulose resins such as methyl cellulose, ethyl cellulose, carboxymethyl cellulose, oxyethyl cellulose, benzyl cellulose, propyl cellulose, nitrocellulose, methyl methacrylate, ethyl methacrylate, butyl methacrylate, 2-hydroxyethyl methacrylate, butyl acrylate.
- Organic resins such as acrylic resins obtained by polymerizing one or more acrylic monomers such as 2-hydroxyethyl acrylate are used.
- Solvents such as terpineol, butyl carbitol acetate, and ethyl carbitol acetate are used in the case of a cellulose resin, and solvents such as methyl ethyl ketone, terpineol, butyl carbitol acetate, and ethyl carbitol acetate are used in the case of an acrylic resin. .
- the viscosity of the sealing material paste may be adjusted to the viscosity corresponding to the apparatus applied to the glass substrate 3, and can be adjusted by the ratio of the resin (binder component) and the solvent or the ratio of the sealing glass material component and the vehicle.
- a known additive may be added to the sealing material paste as a glass paste such as an antifoaming agent or a dispersing agent. These additives are also components that usually disappear during firing.
- a known method using a rotary mixer equipped with a stirring blade, a roll mill, a ball mill or the like can be applied to the preparation of the sealing material paste.
- the above-described sealing material paste is applied to the sealing region 7 of the second glass substrate 3 and dried to form an application layer of the sealing material paste.
- the sealing material paste is applied so that the film thickness after firing is 15 ⁇ m or less.
- the sealing material paste is applied to the second sealing region 7 by applying a printing method such as screen printing or gravure printing, or is applied along the second sealing region 7 using a dispenser or the like.
- the coating layer of the sealing material paste is preferably dried at a temperature of 120 ° C. or more for 10 minutes or more, for example. A drying process is implemented in order to remove the solvent in an application layer. If the solvent remains in the coating layer, there is a possibility that components to be eliminated such as a binder cannot be sufficiently removed in the subsequent firing step.
- the sealing material layer 9 is formed by baking the coating layer of the sealing material paste described above.
- the coating layer is heated to a temperature not higher than the glass transition point of the sealing glass (glass frit), the binder component in the coating layer is removed, and then the softening point of the sealing glass (glass frit) or higher.
- the glass material for sealing is melted and baked on the glass substrate 3 by heating to a temperature.
- the sealing material layer 9 made of a material (sealing material) obtained by baking the sealing glass material is formed in the sealing region 7 of the second glass substrate 3.
- the 1st glass substrate 2 produced separately from the 2nd glass substrate 3 is prepared,
- the illuminating device using FPD, OEL elements, such as OELD, PDP, LCD, using these glass substrates 2 and 3 Then, an electronic device 1 such as a solar cell such as a dye-sensitized solar cell is produced. That is, as shown in FIG. 2B, the first glass substrate 2 and the second glass substrate 3 are laminated via the sealing material layer 9 so that the surfaces 2a and 3a face each other. .
- a gap is formed between the first glass substrate 2 and the second glass substrate 3 based on the thickness of the sealing material layer 9.
- the sealing material layer 9 is irradiated with the laser beam 10 through the second glass substrate 3.
- the laser beam 10 may be applied to the sealing material layer 9 through the first glass substrate 2.
- the laser beam 10 is irradiated while scanning along the frame-shaped sealing material layer 9.
- a seal that seals between the first glass substrate 2 and the second glass substrate 3 is sealed.
- a deposition layer 8 is formed.
- the thickness of the sealing layer 8 is reduced from the thickness of the sealing material layer 9, the thickness reduction after laser sealing is small because the thickness of the sealing material layer 9 is as thin as 15 ⁇ m or less. Therefore, the sealing layer 8 has a thickness (15 ⁇ m or less) approximate to the thickness of the sealing material layer 9.
- a glass panel constituted by the first glass substrate 2, the second glass substrate 3 and the sealing layer 8 is provided between the first glass substrate 2 and the second glass substrate 3.
- An electronic device 1 in which the electronic element portion 4 is hermetically sealed is produced.
- the glass panel of this embodiment is not restricted to the component of the electronic device 1, It is possible to apply also to glass members (building materials etc.), such as a sealing body of electronic components, or multilayer glass. is there.
- Laser light 10 is not particularly limited, and laser light from a semiconductor laser, carbon dioxide laser, excimer laser, YAG laser, HeNe laser, or the like is used.
- the output of the laser beam 10 is appropriately set according to the thickness of the sealing material layer 9 and the like, but is preferably in the range of 2 to 150 W, for example. If the laser output is less than 2 W, the sealing material layer 9 may not be melted, and if it exceeds 150 W, cracks and cracks are likely to occur in the glass substrates 2 and 3.
- the output of the laser beam 10 is more preferably in the range of 5 to 100W.
- the electronic device 1 and its manufacturing process of this embodiment even when the thickness T of the sealing material layer 9 is reduced to 15 ⁇ m or less to reduce the substrate interval, the glass substrates 2 and 3 at the time of laser sealing are used. Therefore, it is possible to suppress cracks and cracks in the glass substrates 2 and 3 and the sealing layer 8. Therefore, the electronic device 1 in which the glass package is thinned can be manufactured with high yield, and the sealing property, hermetic sealing property, and reliability of the electronic device 1 can be improved.
- the difference between the thermal expansion coefficient ⁇ 2 of the first glass substrate 2 and the second glass substrate 3 and the thermal expansion coefficient ⁇ 1 of the sealing material layer 9 is mainly 15 to 15.
- the range of 65 ( ⁇ 10 ⁇ 7 / ° C.) has been described, the configuration of the glass substrates 2 and 3 is not limited to this.
- the difference between the thermal expansion coefficient alpha 1 of at least one of the thermal expansion coefficient and sealing material layer 9 If it is in the range of 15 to 65 ( ⁇ 10 ⁇ 7 / ° C.), the improvement in fluidity based on the decrease in the amount of filler in the sealing material and the effect of reducing the residual stress due to the reduction in the laser processing temperature, that is, the glass substrate 2 3 and the effect of suppressing cracks and cracks in the sealing layer 8 can be obtained.
- the difference from the thermal expansion coefficient ⁇ 1 of the sealing material layer 9 is in the range of 15 to 65 ⁇ 10 ⁇ 7 / ° C.
- the laser processing temperature Adhesiveness between the first glass substrate 2 and the second glass substrate 3 and the sealing layer 8 and its reliability can be improved based on the effect of reducing the residual stress due to a decrease in the thickness.
- the thermal expansion coefficient ⁇ 21 of the first glass substrate 2 and the thermal expansion coefficient ⁇ 22 of the second glass substrate 3 may be in the range of 15 to 65 ( ⁇ 10 ⁇ 7 / ° C.), and the other thermal expansion coefficient and the sealing material
- the difference from the thermal expansion coefficient ⁇ 1 of the layer 9 may be less than 15 ⁇ 10 ⁇ 7 / ° C. That is, when the glass substrates 2 and 3 made of different glass materials are used, the thermal expansion coefficient of the glass substrate having a large difference in thermal expansion from the sealing material layer 9 and the thermal expansion coefficient ⁇ 1 of the sealing material layer 9 are used.
- the difference may be in the range of 15 to 65 ( ⁇ 10 ⁇ 7 / ° C.).
- a range difference is 15 to 65 of ( ⁇ 10 -7 / °C) between the thermal expansion coefficient alpha 1 of the first thermal expansion coefficient alpha 21 of the glass substrate 2 and the sealing material layer 9, the sealing material layer 9
- the sealing material by the laser beam 10 In the step of melting and fixing the layer 9, the adhesion between the first glass substrate 2 and the sealing layer 8 and the reliability thereof are improved based on the effect of reducing the residual stress due to the laser processing temperature being lowered.
- the adhesiveness between the second glass substrate 2 and the sealing layer 8 and its reliability are not only the effect of reducing the residual stress due to a decrease in the laser processing temperature, but also the second glass substrate 3 and the sealing glass material. Further improvement is based on a small difference in thermal expansion. A first thermal expansion coefficient alpha 21 of the glass substrate 2 and the second thermal expansion coefficient alpha 22 of the glass substrate 3 or vice versa.
- Example 1 Bismuth glass frit having a composition of Bi 2 O 3 83 mass%, B 2 O 3 5 mass%, ZnO 11 mass%, Al 2 O 3 1 mass% and an average particle diameter of 1.0 ⁇ m (softening point: 410 ° C), cordierite powder as a low expansion filler, and a laser absorber having a composition of Fe 2 O 3 —Cr 2 O 3 —MnO—Co 2 O 3 .
- Cordierite powder as a low expansion filler has a particle size distribution with D10 of 1.3 ⁇ m, D50 of 2.0 ⁇ m, D90 of 3.0 ⁇ m and Dmax of 4.6 ⁇ m, and a specific surface area of 5.8 m 2 / g.
- the laser absorber has a particle size distribution with D10 of 0.4 ⁇ m, D50 of 0.9 ⁇ m, D90 of 1.5 ⁇ m, and Dmax of 2.8 ⁇ m, and a specific surface area of 5.0 m 2 / g.
- the specific surface areas of the cordierite powder and the laser absorber were measured using a BET specific surface area measuring apparatus (Macsorb HM model-1201, manufactured by Mountec Co., Ltd.). The measurement conditions were adsorbate: nitrogen, carrier gas: helium, and measurement method. : Flow method (BET 1-point system), degassing temperature: 200 ° C., degassing time: 20 minutes, degassing pressure: N 2 gas flow / atmospheric pressure, sample weight: 1 g The same applies to the following examples.
- the above-mentioned bismuth-based glass frit 72.7% by volume, cordierite powder 22.0% by volume, laser absorber 5.3% by volume (the total content of cordierite powder and laser absorber 27.3% by volume) Were mixed to obtain a sealing glass material, and 80% by mass of this sealing glass material was mixed with 20% by mass of a vehicle to prepare a sealing material paste.
- the vehicle is obtained by dissolving ethyl cellulose (2.5% by mass) as a binder component in a solvent (97.5% by mass) made of terpineol.
- the cordierite powder has a surface area of 3.45 m 2 / cm 3 in the sealing glass material.
- the laser absorber has a surface area of 1.35 m 2 / cm 3 in the sealing glass material.
- the thermal expansion coefficient ⁇ 1 (50 to 250 ° C.) of the sealing material layer of the sealing material paste was 73 ⁇ 10 ⁇ 7 / ° C.
- the body was polished to produce a round bar having a length of 20 mm and a diameter of 5 mm, and the average linear expansion coefficient value in a temperature range of 50 to 250 ° C. measured by RMAK TMA8310 is displayed.
- the transition point is the temperature of the first inflection point of the suggested thermal analysis (DTA)
- the softening point is the temperature of the fourth inflection point of the suggested thermal analysis (DTA)
- the crystallization point is the suggested heat. It is defined as the temperature at which the exotherm due to crystallization in analysis (DTA) peaks.
- a second glass substrate (dimension: 90 ⁇ 90 ⁇ 0.7 mmt) made of alkali-free glass (thermal expansion coefficient ⁇ 2 (50 to 250 ° C.): 38 ⁇ 10 ⁇ 7 / ° C.) is prepared.
- the sealing material paste was applied to the sealing region of the glass substrate by a screen printing method, it was dried at 120 ° C. for 10 minutes.
- the sealing material layer with a film thickness T of 7 ⁇ m was formed by baking the coating layer under conditions of 480 ° C. ⁇ 10 minutes.
- the thermal expansion coefficient ⁇ 1 (73 ⁇ 10 ⁇ 7 / ° C.) of the sealing material layer (the material obtained by firing the sealing material paste) and the thermal expansion coefficient ⁇ 2 (38 ⁇ 10 ⁇ 7 / ° C.) of the glass substrate The difference ( ⁇ 1 ⁇ 2 ) is 35 ⁇ 10 ⁇ 7 / ° C.
- the second glass substrate having the sealing material layer described above and the first glass substrate having the element region (region in which the OEL element is formed) (the substrate made of an alkali-free glass having the same composition and shape as the second glass substrate) ).
- the sealing material layer is irradiated with a laser beam (semiconductor laser) having a wavelength of 940 nm, an output of 60 W, and a spot diameter of 1.6 mm through the second glass substrate at a scanning speed of 10 mm / s.
- the first glass substrate and the second glass substrate were sealed by melting and rapid solidification.
- the processing temperature during laser irradiation was 623 ° C. In this way, the electronic device in which the element region was sealed with the glass panel was subjected to the characteristic evaluation described later.
- Example 2 The cordierite powder and laser absorber having the particle shape shown in Table 1 and Table 2 are mixed with the bismuth-based glass frit having the same composition as Example 1 at the ratio shown in Table 1 and Table 2 to obtain a sealing glass material, Subsequently, it was mixed with a vehicle in the same manner as in Example 1 to prepare a sealing material paste. Using this sealing material paste, a sealing material layer was formed on the second glass substrate in the same manner as in Example 1. The surface area of the low expansion filler and laser absorber in the glass material for sealing, the thermal expansion coefficient ⁇ 1 of the sealing material layer, the difference in the thermal expansion coefficient from the glass substrate ( ⁇ 1 - ⁇ 2 ), the sealing material layer The film thickness is as shown in Table 1 and Table 2.
- a second glass substrate having a sealing material layer and a first glass substrate having an element region were laminated.
- the first and second glass substrates are made of non-alkali glass as in the first embodiment.
- the sealing material layer is irradiated with a laser beam (semiconductor laser) having a wavelength of 940 nm and a spot diameter of 1.6 mm through the second glass substrate at a scanning speed of 10 mm / s to melt and rapidly cool and solidify the sealing material layer.
- a laser beam semiconductor laser
- Tables 1 and 2 were applied to the laser beam output.
- the laser processing temperature is as shown in Tables 1 and 2. In this way, the electronic device in which the element region was sealed with the glass panel was subjected to the characteristic evaluation described later.
- Example 11 to 12 The laser absorbing material having the particle shape shown in Table 3 was mixed with the bismuth-based glass frit having the same composition as in Example 1 at the ratio shown in Table 3 to obtain a sealing glass material.
- the sealing material paste was prepared by mixing. Here, no low expansion filler is used. Using this sealing material paste, a sealing material layer was formed on the second glass substrate in the same manner as in Example 1. Table 3 shows the surface area of the laser absorber in the sealing glass material, the thermal expansion coefficient ⁇ 1 of the sealing material layer, the difference in thermal expansion coefficient from the glass substrate ( ⁇ 1 - ⁇ 2 ), and the film thickness of the sealing material layer. As shown in
- a second glass substrate having a sealing material layer and a first glass substrate having an element region were laminated.
- the first and second glass substrates are made of non-alkali glass as in the first embodiment.
- the sealing material layer is irradiated with a laser beam (semiconductor laser) having a wavelength of 940 nm and a spot diameter of 1.6 mm through the second glass substrate at a scanning speed of 10 mm / s to melt and rapidly cool and solidify the sealing material layer.
- a laser beam semiconductor laser
- the values shown in Table 3 were applied to the laser beam output.
- the laser processing temperature is as shown in Table 3. In this way, the electronic device in which the element region was sealed with the glass panel was subjected to the characteristic evaluation described later.
- Comparative Examples 1 and 2 a relatively large amount of glass material for sealing was used so that the difference in thermal expansion coefficient ( ⁇ 1 - ⁇ 2 ) between the sealing material layer and the glass substrate was less than 15 ⁇ 10 ⁇ 7 / ° C.
- a low expansion filler (cordierite powder) is added.
- a second glass substrate having a sealing material layer and a first glass substrate having an element region (region where an OEL element was formed) were laminated.
- the first and second glass substrates are made of non-alkali glass as in the first embodiment.
- the sealing material layer is irradiated with a laser beam (semiconductor laser) having a wavelength of 940 nm and a spot diameter of 1.6 mm through the second glass substrate at a scanning speed of 10 mm / s to melt and rapidly cool and solidify the sealing material layer.
- a laser beam semiconductor laser
- the value shown in Table 3 was applied to the output of the laser beam according to the content of the low expansion filler.
- the laser processing temperature is as shown in Table 3.
- the electronic device thus produced was subjected to the characteristic evaluation described later.
- Example 13 Tin having a composition of 56 mol% SnO, 3 mol% SnO 2 , 32 mol% P 2 O 5, 5 mol% ZnO, 2 mol% Al 2 O 3, 2 mol% SiO 2 and an average particle diameter of 1.5 ⁇ m -Phosphate glass frit (softening point: 360 ° C), zirconium phosphate ((ZrO) 2 P 2 O 7 ) powder as low expansion filler, Fe 2 O 3 -Cr 2 O 3 -MnO-Co 2 A laser absorber having an O 3 composition was prepared.
- Zirconium phosphate powder as a low expansion filler has a particle size distribution with D10 of 0.7 ⁇ m, D50 of 1.2 ⁇ m, D90 of 2.3 ⁇ m and Dmax of 4.6 ⁇ m, and a specific surface area of 4.2 m 2. / G.
- the laser absorber has a particle size distribution with D10 of 0.4 ⁇ m, D50 of 0.9 ⁇ m, D90 of 1.5 ⁇ m, Dmax of 2.8 ⁇ m, and a specific surface area of 5.0 m 2 / g.
- the vehicle is obtained by dissolving nitrocellulose (4% by mass) as a binder component in a solvent (96% by mass) made of butyl carbitol acetate.
- the zirconium phosphate powder has a surface area within the glass material for sealing of 4.61 m 2 / cm 3 .
- the laser absorbing material has a surface area in the glass material for sealing of 1.22 m 2 / cm 3 .
- the thermal expansion coefficient ⁇ 1 (50 to 250 ° C.) of the sealing material layer of the sealing material paste was 59 ⁇ 10 ⁇ 7 / ° C.
- Sintering obtained by baking to remove the solvent and binder components and sintering for 10 minutes within a temperature range from the softening point of the sealing glass plus 30 ° C. to the crystallization point minus 30 ° C. (430 ° C.
- Example 13 The body was polished to produce a round bar having a length of 20 mm and a diameter of 5 mm, and the average linear expansion coefficient value in a temperature range of 50 to 250 ° C. measured by RMAK TMA8310 is displayed. The same applies to the case of tin-phosphate glass.
- a second glass substrate (dimension: 90 ⁇ 90 ⁇ 0.7 mmt) made of alkali-free glass (thermal expansion coefficient ⁇ 2 (50 to 250 ° C.): 38 ⁇ 10 ⁇ 7 / ° C.) is prepared.
- the sealing material paste was applied to the sealing region of the glass substrate by a screen printing method, it was dried at 120 ° C. for 10 minutes.
- the sealing material layer with a film thickness T of 7 ⁇ m was formed by firing the coating layer under the condition of 430 ° C. ⁇ 10 minutes.
- the difference ( ⁇ 1 - ⁇ 2 ) between the thermal expansion coefficient ⁇ 1 (59 ⁇ 10 ⁇ 7 / ° C.) of the sealing material layer and the thermal expansion coefficient ⁇ 2 (38 ⁇ 10 ⁇ 7 / ° C.) of the glass substrate is 21 ⁇ . 10 ⁇ 7 / ° C.
- the second glass substrate having the sealing material layer described above and the first glass substrate having the element region (region in which the OEL element is formed) (the substrate made of an alkali-free glass having the same composition and shape as the second glass substrate) ).
- the sealing material layer is irradiated with a laser beam (semiconductor laser) having a wavelength of 940 nm, an output of 85 W, and a spot diameter of 1.6 mm through the second glass substrate at a scanning speed of 10 mm / s.
- the first glass substrate and the second glass substrate were sealed by melting and rapid solidification.
- the processing temperature during laser irradiation was 890 ° C. In this way, the electronic device in which the element region was sealed with the glass panel was subjected to the characteristic evaluation described later.
- Example 14 to 17 Zirconium phosphate powder having a particle shape shown in Table 4 and a laser absorber were mixed with a tin-phosphate glass frit having the same composition as in Example 13 in the proportion shown in Table 4 to prepare a sealing glass material. Subsequently, the sealing material layer was formed on the 2nd glass substrate like Example 13 using the sealing material paste prepared by mixing the glass material for sealing with a vehicle similarly to Example 13.
- FIG. The surface area of the low expansion filler and laser absorber in the glass material for sealing, the thermal expansion coefficient ⁇ 1 of the sealing material layer, the difference in the thermal expansion coefficient from the glass substrate ( ⁇ 1 - ⁇ 2 ), the sealing material layer The film thickness is as shown in Table 4.
- a second glass substrate having a sealing material layer and a first glass substrate having an element region were laminated.
- the first and second glass substrates are made of alkali-free glass as in Example 13.
- the sealing material layer is irradiated with a laser beam (semiconductor laser) having a wavelength of 940 nm and a spot diameter of 1.6 mm through the second glass substrate at a scanning speed of 10 mm / s to melt and rapidly cool and solidify the sealing material layer.
- a laser beam semiconductor laser
- the value shown in Table 4 was applied to the output of the laser beam.
- the laser processing temperature is as shown in Table 4. In this way, the electronic device in which the element region was sealed with the glass panel was subjected to the characteristic evaluation described later.
- Example 3 Zirconium phosphate powder having a particle shape shown in Table 5 and a laser absorber were mixed with a tin-phosphate glass frit having the same composition as in Example 13 in the proportion shown in Table 5 to prepare a sealing glass material. Subsequently, the sealing material layer was formed on the 2nd glass substrate like Example 13 using the sealing material paste prepared by mixing the glass material for sealing with a vehicle similarly to Example 13.
- FIG. The surface area of the low expansion filler and laser absorber in the glass material for sealing, the thermal expansion coefficient ⁇ 1 of the sealing material layer, the difference in the thermal expansion coefficient from the glass substrate ( ⁇ 1 - ⁇ 2 ), the sealing material layer The film thickness is as shown in Table 5.
- Comparative Example 3 a relatively large amount of low expansion was applied to the sealing glass material so that the difference in thermal expansion coefficient ( ⁇ 1 - ⁇ 2 ) between the sealing material layer and the glass substrate was less than 15 ⁇ 10 ⁇ 7 / ° C.
- a filler zirconium phosphate powder is added.
- a second glass substrate having a sealing material layer and a first glass substrate having an element region (region where an OEL element was formed) were laminated.
- the first and second glass substrates are made of alkali-free glass as in Example 13.
- the sealing material layer is irradiated with a laser beam (semiconductor laser) having a wavelength of 940 nm and a spot diameter of 1.6 mm through the second glass substrate at a scanning speed of 10 mm / s to melt and rapidly cool and solidify the sealing material layer.
- a laser beam semiconductor laser
- the value shown in Table 5 was applied to the output of the laser beam according to the content of the low expansion filler.
- the laser processing temperature is as shown in Table 5.
- the electronic device thus produced was subjected to the characteristic evaluation described later.
- Example 4 A laser material having a particle shape shown in Table 5 was mixed with a tin-phosphate glass frit having the same composition as in Example 13 at a ratio shown in Table 5 to prepare a sealing glass material. Here, no low expansion filler is used. Subsequently, the sealing material layer was formed on the 2nd glass substrate like Example 13 using the sealing material paste prepared by mixing the glass material for sealing with a vehicle similarly to Example 13.
- FIG. The thermal expansion coefficient ⁇ 1 of the sealing material layer is 113 ⁇ 10 ⁇ 7 / ° C.
- the difference ( ⁇ 1 ⁇ 2 ) from the thermal expansion coefficient ⁇ 2 (38 ⁇ 10 ⁇ 7 / ° C.) of the glass substrate is 75. ⁇ 10 ⁇ 7 / ° C.
- Table 5 shows the surface area of the laser absorbing material in the sealing glass material and the film thickness of the sealing material layer.
- a second glass substrate having a sealing material layer and a first glass substrate having an element region were laminated.
- the first and second glass substrates are made of alkali-free glass as in Example 13.
- the sealing material layer is irradiated with a laser beam (semiconductor laser) having a wavelength of 940 nm and a spot diameter of 1.6 mm through the second glass substrate at a scanning speed of 10 mm / s to melt and rapidly cool and solidify the sealing material layer.
- a laser beam semiconductor laser
- the values shown in Table 5 were applied to the laser light output.
- the laser processing temperature is as shown in Table 5. In this way, the electronic device in which the element region was sealed with the glass panel was subjected to the characteristic evaluation described later.
- Example 5 Zirconium phosphate powder having a particle shape shown in Table 5 and a laser absorber were mixed with a tin-phosphate glass frit having the same composition as in Example 13 in the proportion shown in Table 5 to prepare a sealing glass material.
- the zirconium phosphate powder and the laser absorber are prepared for a film thickness of 38 ⁇ m.
- a sealing material having a film thickness of 38 ⁇ m is formed on the second glass substrate in the same manner as in Example 13 using a sealing material paste prepared by mixing the sealing glass material with a vehicle in the same manner as in Example 13. A layer was formed.
- a second glass substrate having a sealing material layer and a first glass substrate having an element region (region where an OEL element was formed) were laminated.
- the first and second glass substrates are made of alkali-free glass as in Example 13.
- the sealing material layer is irradiated with a laser beam (semiconductor laser) having a wavelength of 940 nm and a spot diameter of 1.6 mm through the second glass substrate at a scanning speed of 10 mm / s to melt and rapidly cool and solidify the sealing material layer.
- a laser beam semiconductor laser
- the values shown in Table 5 were applied to the laser light output.
- the laser processing temperature is as shown in Table 5.
- the electronic device thus produced was subjected to the characteristic evaluation described later.
- the thickness of the sealing layer was measured as follows.
- the glass panel of each example sealed with the sealing layer was cut out with a dicing machine, and the thickness of the sealing layer was measured by observing the cross section with a scanning electron microscope.
- the distortion of the glass substrate was measured as follows. First, on the alkali-free glass substrate (10 ⁇ 60 ⁇ 0.7 mmt) having a mirror-polished cross section, the sealing material paste according to each example was applied by a screen printing method, and then 120 ° C. ⁇ 10 minutes in a batch-type drying furnace. Dried under conditions. Next, a sealing material layer having a line width of 1 mm, a length of 30 mm, and a thickness of 7 ⁇ m (thickness of 38 ⁇ m in Comparative Example 5) was formed by firing under the firing conditions optimum for each paste in a firing furnace.
- a laser beam having a wavelength of 940 nm and a spot diameter of 1.6 mm is irradiated at a scanning speed of 10 mm / s under a weight of 500 g. And bonded.
- the output of the laser beam was adjusted according to each example.
- the ratio (S2 / S1) of the bonding area of the sealing material layer to the area S1 of the sealing material layer before bonding (the area where the melted and solidified layer of the sealing material layer is bonded to the glass substrate) S2 is obtained. 90-95% of samples were made. The strain amount of the glass substrate of each sample was measured. The amount of strain was measured by observing each sample from a cross section using a birefringence imaging system and measuring strain (retardation: nm) contained in the glass substrate.
- the glass panels according to Examples 1 to 17 are all excellent in appearance and airtightness and have a small amount of distortion of the glass substrate.
- the thickness of the sealing material layer is as thin as 15 ⁇ m or less.
- the strain amount of Examples 3 to 6 is a comparison in which the thickness of the sealing material layer is increased to 38 ⁇ m and the laser processing temperature is lowered. Since it was lower than the distortion amount of the glass panel of Example 5, it was confirmed that it was sealed in a good state.
- Comparative Examples 1 to 3 in which the content of the low expansion filler is increased and the laser processing temperature is increased accordingly, the residual stress generated in the glass substrate in the laser sealing process is large. It was confirmed that cracks occurred in the layer. It was also confirmed that cracks were generated in the glass substrate and the sealing layer in Comparative Example 4 in which the amount of filler was extremely reduced.
- Example 18 A sealing material paste containing the same sealing glass material as in Example 4 was used, and a second glass substrate made of alkali-free glass (thermal expansion coefficient ⁇ 22 : 38 ⁇ 10 ⁇ 7) in the same manner as in Example 4. / ° C.) was formed on the sealing material layer (coefficient of thermal expansion ⁇ 1 of the sealing material layer: 73 ⁇ 10 ⁇ 7 / ° C.). The difference in thermal expansion between the sealing material layer and the second glass substrate is 35 ⁇ 10 ⁇ 7 / ° C.
- a first glass substrate thermal expansion coefficient ⁇ 21 : 83 ⁇ 10 ⁇ 7 / ° C.
- the difference in thermal expansion between the first glass substrate and the sealing material layer is 10 ⁇ 10 ⁇ 7 / ° C.
- the first glass substrate and the second glass substrate were sealed by irradiating laser light under the same conditions as in Example 4.
- the appearance and airtightness of the glass panel thus obtained were evaluated according to the method described above. The results are shown in Table 6.
- Example 19 A sealing material paste containing the same sealing glass material as in Example 4 was used, and a second glass substrate made of soda lime glass (thermal expansion coefficient ⁇ 22 : 83 ⁇ 10 ⁇ 7 / ° C.) was used. A sealing material layer was formed in the same manner as in Example 4 (thermal expansion coefficient ⁇ 1 of sealing material layer: 73 ⁇ 10 ⁇ 7 / ° C.). The difference in thermal expansion between the sealing material layer and the second glass substrate is 10 ⁇ 10 ⁇ 7 / ° C. Next, a first glass substrate (coefficient of thermal expansion ⁇ 21 : 38 ⁇ 10 ⁇ 7 / ° C.) made of alkali-free glass was prepared and laminated with the second glass substrate described above.
- the difference in thermal expansion between the first glass substrate and the sealing material layer is 35 ⁇ 10 ⁇ 7 / ° C.
- the first glass substrate and the second glass substrate were sealed by irradiating laser light under the same conditions as in Example 4.
- the appearance and airtightness of the glass panel thus obtained were evaluated according to the method described above. The results are shown in Table 6.
- Example 20 A sealing material paste containing the same sealing glass material as in Example 4 was used, and a second glass substrate made of alkali-free glass (thermal expansion coefficient ⁇ 22 : 38 ⁇ 10 ⁇ 7) in the same manner as in Example 4. / ° C.) was formed on the sealing material layer (coefficient of thermal expansion ⁇ 1 of the sealing material layer: 73 ⁇ 10 ⁇ 7 / ° C.). The difference in thermal expansion between the sealing material layer and the second glass substrate is 35 ⁇ 10 ⁇ 7 / ° C.
- a soda-lime glass substrate PD200 (trade name, manufactured by Asahi Glass Co., Ltd.
- thermo expansion coefficient ⁇ 21 (thermal expansion coefficient ⁇ 21 : 83 ⁇ 10 ⁇ 7 / ° C.)) is prepared as the first glass substrate, and this is used for the second glass described above. Laminated with substrate. The difference in thermal expansion between the first glass substrate and the sealing material layer is 10 ⁇ 10 ⁇ 7 / ° C. Thereafter, the first glass substrate and the second glass substrate were sealed by irradiating laser light under the same conditions as in Example 4. The appearance and airtightness of the glass panel thus obtained were evaluated according to the method described above. The results are shown in Table 6.
- Example 21 A sealing material paste containing the same sealing glass material as in Example 4 was used, and a soda-lime glass substrate PD200 (trade name, manufactured by Asahi Glass Co., Ltd. (thermal expansion coefficient ⁇ 22 : 83 ⁇ 10 8) was used as the second glass substrate. ⁇ 7 / ° C.)) was used in the same manner as in Example 4 (thermal expansion coefficient ⁇ 1 of the sealing material layer: 73 ⁇ 10 ⁇ 7 / ° C.). The difference in thermal expansion between the sealing material layer and the second glass substrate is 10 ⁇ 10 ⁇ 7 / ° C.
- a first glass substrate (coefficient of thermal expansion ⁇ 21 : 38 ⁇ 10 ⁇ 7 / ° C.) made of alkali-free glass was prepared and laminated with the second glass substrate described above.
- the difference in thermal expansion between the first glass substrate and the sealing material layer is 35 ⁇ 10 ⁇ 7 / ° C.
- the first glass substrate and the second glass substrate were sealed by irradiating laser light under the same conditions as in Example 4.
- the appearance and airtightness of the glass panel thus obtained were evaluated according to the method described above. The results are shown in Table 6.
- the glass member with a sealing material layer of the present invention produces a flat panel display device or a solar cell panel having a structure in which a display element or a solar cell element is sealed between two glass substrates arranged opposite to each other. Therefore, it is useful as a glass substrate used for this purpose.
- the electronic device of the present invention is a flat display device or a solar battery panel having the above structure.
- SYMBOLS 1 Electronic device, 2 ... 1st glass substrate, 2a ... Surface, 3 ... 2nd glass substrate, 3a ... Surface, 4 ... Electronic element part, 5 ... Element area
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Glass Compositions (AREA)
- Joining Of Glass To Other Materials (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
封着ガラス(ガラスフリット)には、例えば錫-リン酸系ガラス、ビスマス系ガラス、バナジウム系ガラス、鉛系ガラス等の低融点ガラスが用いられる。これらのうち、ガラス基板2、3に対する封着性(接着性)やその信頼性(接着信頼性や密閉性)、さらには環境や人体に対する影響性等を考慮して、錫-リン酸系ガラスやビスマス系ガラスからなる封着ガラスを使用することが好ましい。
封着用ガラス材料はレーザ吸収材と低膨張充填材以外に他の充填材(例えば、封着ガラスの熱膨張率と同等以上の熱膨張係数を有する充填材)を含有していてもよい。ただし、通常は他の充填材の使用は必要としない。以下、特に言及しない限り、充填材とはレーザ吸収材と低膨張充填材とを意味し、充填材の量的割合などはレーザ吸収材と低膨張充填材の合計量の割合をいう。
以下、封着材料層9を構成する材料である焼成した封着用ガラス材料を封着材料ともいう。当該封着材料の熱膨張係数α1を封着材料層の熱膨張係数α1ということもある。
また、封着層8は、封着用ガラス材料や封着材料層9の材料(焼成した封着用ガラス材料)が溶融固着した材料からなる層であり、通常は封着材料層9を溶融させて冷却して形成された層である。封着材料層9の材料(封着材料)を封着のために一旦溶融させて冷却する工程を経ても、封着層8の材料と封着材料層9の材料とは、材料としての変化は実質的にないと考えられる。したがって、封着層8の材料の熱膨張係数は、前述の封着材料の熱膨張係数α1に等しい。
σ=α・ΔT・E/(1-ν) …(1)
封着用ガラス材料は、前記のように、封着ガラスとレーザ吸収材と任意に低膨張充填材とを含有し、さらに、これら以外の添加材を必要に応じて含有した組成物からなる。本発明においては、添加材のうち、焼成の際に揮発や焼失により組成物から消失する溶剤やバインダは封着用ガラス材料の構成成分から除く。焼成の際に揮発や焼失により組成物から消失する成分は、塗布等によりガラス基板表面に封着用ガラス材料の層を形成するために通常必須の添加物である。しかし、この消失する成分は、封着材料を構成する成分ではないので、前記封着用ガラス材料の構成成分とはせず、前記構成成分の組成割合もこの消失する成分を除いた構成割合をいう。封着用ガラス材料の構成成分と溶剤やバインダなどの消失する成分とを含む、焼成後に封着材料となる層を形成するための組成物を以下封着材料ペーストという。
焼成により焼失する成分の組成割合は、焼成後に残る成分の組成割合と共に封着材料ペーストに要求される塗工性などの特性を考慮して決められる。
Bi2O383質量%、B2O35質量%、ZnO11質量%、Al2O31質量%の組成を有し、平均粒径が1.0μmのビスマス系ガラスフリット(軟化点:410℃)と、低膨張充填材としてコージェライト粉末と、Fe2O3-Cr2O3-MnO-Co2O3組成を有するレーザ吸収材とを用意した。低膨張充填材としてのコージェライト粉末は、D10が1.3μm、D50が2.0μm、D90が3.0μm、Dmaxが4.6μmの粒度分布を有し、かつ比表面積は5.8m2/gである。また、レーザ吸収材は、D10が0.4μm、D50が0.9μm、D90が1.5μm、Dmaxが2.8μmの粒度分布を有し、かつ比表面積は5.0m2/gである。コージェライト粉末およびレーザ吸収材の比表面積は、BET比表面積測定装置(マウンテック社製、Macsorb HM model-1201」を用いて測定した。測定条件は、吸着質:窒素、キャリアガス:ヘリウム、測定方法:流動法(BET1点式)、脱気温度:200℃、脱気時間:20分、脱気圧力:N2ガスフロー/大気圧、サンプル重量:1gとした。以下の例も同様である。
なお、封着材料層の熱膨張係数α1は、上記封着材料ペーストを封着ガラスの転移点マイナス10℃から転移点マイナス50℃の温度範囲内(実施例1では300℃)2時間で焼成して溶剤とバインダ成分を除去し、封着ガラスの軟化点プラス30℃から結晶化点マイナス30℃の温度範囲内(実施例1では480℃)10分の焼結で得られた焼結体を研磨し、長さ20mm直径5mmの丸棒を作製し、リガク社製TMA8310にて測定した50~250℃の温度範囲における平均線膨張係数値を表示している。以下ビスマス系ガラスの場合の例も同様である。本明細書で転移点は、示唆熱分析(DTA)の第1変曲点の温度で、軟化点は、示唆熱分析(DTA)の第4変曲点の温度で、結晶化点は示唆熱分析(DTA)の結晶化起因の発熱がピークとなる温度で定義されるものである。
表1および表2に示す粒子形状を有するコージェライト粉末およびレーザ吸収材を、表1および表2に示す割合で実施例1と同組成のビスマス系ガラスフリットと混合して封着用ガラス材料とし、次いで、実施例1と同様にビヒクルと混合して封着材料ペーストを調製した。この封着材料ペーストを用いて、実施例1と同様にして第2のガラス基板上に封着材料層を形成した。封着用ガラス材料内の低膨張充填材およびレーザ吸収材の表面積、封着材料層の熱膨張係数α1、ガラス基板との熱膨張係数の差(α1-α2)、封着材料層の膜厚は表1および表2に示す通りである。
表3に示す粒子形状を有するレーザ吸収材を、表3に示す割合で実施例1と同組成のビスマス系ガラスフリットと混合して封着用ガラス材料とし、次いで、実施例1と同様にビヒクルと混合して封着材料ペーストを調製した。ここでは低膨張充填材を使用していない。この封着材料ペーストを用いて、実施例1と同様にして第2のガラス基板上に封着材料層を形成した。封着用ガラス材料内のレーザ吸収材の表面積、封着材料層の熱膨張係数α1、ガラス基板との熱膨張係数の差(α1-α2)、封着材料層の膜厚は表3に示す通りである。
表3に示す粒子形状を有するコージェライト粉末およびレーザ吸収材を、表3に示す割合で実施例1と同組成のビスマス系ガラスフリットと混合して封着用ガラス材料とし、次いで、実施例1と同様にビヒクルと混合して封着材料ペーストを調製した。この封着材料ペーストを用いて、実施例1と同様にして第2のガラス基板上に封着材料層を形成した。封着用ガラス材料内の低膨張充填材およびレーザ吸収材の表面積、封着材料層の熱膨張係数α1、ガラス基板との熱膨張係数の差(α1-α2)、封着材料層の膜厚は表3に示す通りである。比較例1~2は封着材料層とガラス基板との熱膨張係数の差(α1-α2)が15×10-7/℃未満となるように、封着用ガラス材料に比較的多量の低膨張充填材(コージェライト粉末)を添加したものである。
SnO56モル%、SnO23モル%、P2O532モル%、ZnO5モル%、Al2O32モル%、SiO22モル%の組成を有し、平均粒径が1.5μmの錫-リン酸系ガラスフリット(軟化点:360℃)と、低膨張充填材としてリン酸ジルコニウム((ZrO)2P2O7)粉末と、Fe2O3-Cr2O3-MnO-Co2O3組成を有するレーザ吸収材とを用意した。低膨張充填材としてのリン酸ジルコニウム粉末は、D10が0.7μm、D50が1.2μm、D90が2.3μm、Dmaxが4.6μmの粒度分布を有し、かつ比表面積は4.2m2/gである。レーザ吸収材は、D10が0.4μm、D50が0.9μm、D90が1.5μm、Dmaxが2.8μmの粒度分布を有し、かつ比表面積は5.0m2/gである。
上記リン酸ジルコニウム粉末は封着用ガラス材料内の表面積は4.61m2/cm3である。上記レーザ吸収材は封着用ガラス材料内の表面積は1.22m2/cm3である。なお、上記封着材料ペーストの封着材料層の熱膨張係数α1(50~250℃)は59×10-7/℃であった。
なお、封着材料層の熱膨張係数α1は、上記封着材料ペーストを封着ガラスの転移点マイナス10℃から転移点マイナス50℃の温度範囲内(実施例13では250℃)2時間で焼成して溶剤とバインダ成分を除去し、封着ガラスの軟化点プラス30℃から結晶化点マイナス30℃の温度範囲内(実施例13では430℃)10分の焼結で得られた焼結体を研磨し、長さ20mm直径5mmの丸棒を作製し、リガク社製TMA8310にて測定した50~250℃の温度範囲における平均線膨張係数値を表示している。以下錫-リン酸系ガラスの場合の例も同様である。
表4に示す粒子形状を有するリン酸ジルコニウム粉末およびレーザ吸収材を、表4に示す割合で実施例13と同組成の錫-リン酸系ガラスフリットと混合して封着用ガラス材料を作製した。次いで、封着用ガラス材料を実施例13と同様にビヒクルと混合して調製した封着材料ペーストを用いて、実施例13と同様にして第2のガラス基板上に封着材料層を形成した。封着用ガラス材料内の低膨張充填材およびレーザ吸収材の表面積、封着材料層の熱膨張係数α1、ガラス基板との熱膨張係数の差(α1-α2)、封着材料層の膜厚は表4に示す通りである。
表5に示す粒子形状を有するリン酸ジルコニウム粉末およびレーザ吸収材を、表5に示す割合で実施例13と同組成の錫-リン酸系ガラスフリットと混合して封着用ガラス材料を作製した。次いで、封着用ガラス材料を実施例13と同様にビヒクルと混合して調製した封着材料ペーストを用いて、実施例13と同様にして第2のガラス基板上に封着材料層を形成した。封着用ガラス材料内の低膨張充填材およびレーザ吸収材の表面積、封着材料層の熱膨張係数α1、ガラス基板との熱膨張係数の差(α1-α2)、封着材料層の膜厚は表5に示す通りである。比較例3は封着材料層とガラス基板との熱膨張係数の差(α1-α2)が15×10-7/℃未満となるように、封着用ガラス材料に比較的多量の低膨張充填材(リン酸ジルコニウム粉末)を添加したものである。
表5に示す粒子形状を有するレーザ吸収材を、表5に示す割合で実施例13と同組成の錫-リン酸系ガラスフリットと混合して封着用ガラス材料を作製した。ここでは低膨張充填材を使用していない。次いで、封着用ガラス材料を実施例13と同様にビヒクルと混合して調製した封着材料ペーストを用いて、実施例13と同様にして第2のガラス基板上に封着材料層を形成した。封着材料層の熱膨張係数α1は113×10-7/℃であり、ガラス基板の熱膨張係数α2(38×10-7/℃)との差(α1-α2)は75×10-7/℃である。封着用ガラス材料内のレーザ吸収材の表面積、封着材料層の膜厚は表5に示す通りである。
表5に示す粒子形状を有するリン酸ジルコニウム粉末およびレーザ吸収材を、表5に示す割合で実施例13と同組成の錫-リン酸系ガラスフリットと混合して封着用ガラス材料を作製した。リン酸ジルコニウム粉末およびレーザ吸収材は膜厚38μm用に調整したものである。次いで、封着用ガラス材料を実施例13と同様にビヒクルと混合して調製した封着材料ペーストを用いて、実施例13と同様にして第2のガラス基板上に膜厚が38μmの封着材料層を形成した。
実施例4と同一の封着用ガラス材料を含有する封着材料ペーストを使用し、実施例4と同様にして無アルカリガラスからなる第2のガラス基板(熱膨張係数α22:38×10-7/℃)上に封着材料層を形成した(封着材料層の熱膨張係数α1:73×10-7/℃)。封着材料層と第2のガラス基板との熱膨張差は35×10-7/℃である。次に、ソーダライムガラスからなる第1のガラス基板(熱膨張係数α21:83×10-7/℃)を用意し、これを上記した第2のガラス基板と積層した。第1のガラス基板と封着材料層との熱膨張差は10×10-7/℃である。この後、実施例4と同一条件でレーザ光を照射して、第1のガラス基板と第2のガラス基板とを封着した。このようにして得たガラスパネルの外観と気密性を、前述した方法にしたがって評価した。その結果を表6に示す。
実施例4と同一の封着用ガラス材料を含有する封着材料ペーストを使用し、ソーダライムガラスからなる第2のガラス基板(熱膨張係数α22:83×10-7/℃)を用いる以外は実施例4と同様にして封着材料層を形成した(封着材料層の熱膨張係数α1:73×10-7/℃)。封着材料層と第2のガラス基板との熱膨張差は10×10-7/℃である。次に、無アルカリガラスからなる第1のガラス基板(熱膨張係数α21:38×10-7/℃)を用意し、これを上記した第2のガラス基板と積層した。第1のガラス基板と封着材料層との熱膨張差は35×10-7/℃である。この後、実施例4と同一条件でレーザ光を照射して、第1のガラス基板と第2のガラス基板とを封着した。このようにして得たガラスパネルの外観と気密性を、前述した方法にしたがって評価した。その結果を表6に示す。
実施例4と同一の封着用ガラス材料を含有する封着材料ペーストを使用し、実施例4と同様にして無アルカリガラスからなる第2のガラス基板(熱膨張係数α22:38×10-7/℃)上に封着材料層を形成した(封着材料層の熱膨張係数α1:73×10-7/℃)。封着材料層と第2のガラス基板との熱膨張差は35×10-7/℃である。次に、第1のガラス基板としてソーダライムガラス基板・PD200(商品名、旭硝子社製(熱膨張係数α21:83×10-7/℃))を用意し、これを上記した第2のガラス基板と積層した。第1のガラス基板と封着材料層との熱膨張差は10×10-7/℃である。この後、実施例4と同一条件でレーザ光を照射して、第1のガラス基板と第2のガラス基板とを封着した。このようにして得たガラスパネルの外観と気密性を、前述した方法にしたがって評価した。その結果を表6に示す。
実施例4と同一の封着用ガラス材料を含有する封着材料ペーストを使用し、第2のガラス基板としてソーダライムガラス基板・PD200(商品名、旭硝子社製(熱膨張係数α22:83×10-7/℃))を用いる以外は実施例4と同様にして封着材料層を形成した(封着材料層の熱膨張係数α1:73×10-7/℃)。封着材料層と第2のガラス基板との熱膨張差は10×10-7/℃である。次に、無アルカリガラスからなる第1のガラス基板(熱膨張係数α21:38×10-7/℃)を用意し、これを上記した第2のガラス基板と積層した。第1のガラス基板と封着材料層との熱膨張差は35×10-7/℃である。この後、実施例4と同一条件でレーザ光を照射して、第1のガラス基板と第2のガラス基板とを封着した。このようにして得たガラスパネルの外観と気密性を、前述した方法にしたがって評価した。その結果を表6に示す。
なお、2009年6月30日に出願された日本特許出願2009-154954号および2010年1月27日に出願された日本特許出願2010-015143号の、明細書、特許請求の範囲、図面及び要約書の全内容をここに引用し、本発明の明細書の開示として、取り入れるものである。
Claims (15)
- 封止領域を備える表面を有するガラス基板と、
前記ガラス基板の前記封止領域上に形成されていると共に、厚さが15μm以下の封着材料層とを具備する封着材料層付きガラス部材であって、
前記封着材料層は、封着ガラスとレーザ吸収材と任意に低膨張充填材とを含有し、前記レーザ吸収材と任意成分である低膨張充填材との合計の含有量が2~44体積%の範囲である封着用ガラス材料を焼成した材料からなり、
かつ、前記封着材料層の材料の熱膨張係数α1と前記ガラス基板の熱膨張係数α2との差が15~65(×10-7/℃)の範囲であることを特徴とする封着材料層付きガラス部材。 - 前記封着用ガラス材料は、封着ガラスとレーザ吸収材と低膨張充填材との合計量に対して、2~10体積%の範囲の前記レーザ吸収材と0~40体積%の範囲の前記低膨張充填材とを含有することを特徴とする請求項1記載の封着材料層付きガラス部材。
- 前記封着用ガラス材料は、10~40体積%の範囲の前記低膨張充填材を含有することを特徴とする請求項2記載の封着材料層付きガラス部材。
- 前記封着用ガラス材料内におけるレーザ吸収材と低膨張充填材の合計の表面積が0.5~6m2/cm3の範囲であることを特徴とする請求項1ないし請求項3のいずれか1項記載の封着材料層付きガラス部材。
- 前記低膨張充填材はシリカ、アルミナ、ジルコニア、珪酸ジルコニウム、コージェライト、リン酸ジルコニウム系化合物、ソーダライムガラス、および硼珪酸ガラスから選ばれる少なくとも1種からなることを特徴とする請求項1ないし請求項4のいずれか1項記載の封着材料層付きガラス部材。
- 前記レーザ吸収材はFe、Cr、Mn、Co、Ni、およびCuから選ばれる少なくとも1種の金属または前記金属を含む化合物からなることを特徴とする請求項1ないし請求項5のいずれか1項記載の封着材料層付きガラス部材。
- 前記ガラス基板は無アルカリガラスまたはソーダライムガラスからなり、かつ前記封着ガラスはビスマス系ガラスまたは錫-リン酸系ガラスからなることを特徴とする請求項1ないし請求項6のいずれか1項記載の封着材料層付きガラス部材。
- 第1の封止領域を備える表面を有する第1のガラス基板と、
前記第1の封止領域に対応する第2の封止領域を備える表面を有し、前記表面が前記第1のガラス基板の前記表面と対向するように配置された第2のガラス基板と、
前記第1のガラス基板と前記第2のガラス基板との間に設けられた電子素子部と、
前記電子素子部を封止するように、前記第1のガラス基板の前記第1の封止領域と前記第2のガラス基板の前記第2の封止領域との間に形成され、厚さが15μm以下の封着層とを具備する電子デバイスであって、
前記封着層は、封着ガラスとレーザ吸収材と任意に低膨張充填材とを含有し、前記レーザ吸収材と任意成分である低膨張充填材との合計の含有量が2~44体積%の範囲である封着用ガラス材料の溶融固着層からなり、
かつ、前記封着層の材料の熱膨張係数α1と前記第1のガラス基板および前記第2のガラス基板のうちの少なくとも一方の熱膨張係数α2との差が15~65(×10-7/℃)の範囲であることを特徴とする電子デバイス。 - 前記第1のガラス基板の熱膨張係数α21および前記第2のガラス基板の熱膨張係数α22は、いずれも前記封着層の材料の熱膨張係数α1との差が15~65(×10-7/℃)の範囲であることを特徴とする請求項8記載の電子デバイス。
- 前記第1のガラス基板の熱膨張係数α21および前記第2のガラス基板の熱膨張係数α22のいずれか一方の熱膨張係数は、前記封着層の材料の熱膨張係数α1との差が15~65(×10-7/℃)の範囲であり、かつ他方の熱膨張係数は、前記封着層の材料の熱膨張係数α1との差が15×10-7/℃未満であることを特徴とする請求項8記載の電子デバイス。
- 前記封着用ガラス材料内におけるレーザ吸収材と低膨張充填材の合計の表面積が0.5~6m2/cm3の範囲であることを特徴とする請求項8ないし請求項10のいずれか1項記載の電子デバイス。
- 第1の封止領域を備える表面を有する第1のガラス基板を用意する工程と、
前記第1の封止領域に対応する第2の封止領域と、前記第2の封止領域上に形成されると共に、厚さが15μm以下の封着材料層とを備える表面を有する第2のガラス基板を用意する工程と、
前記第1のガラス基板の前記表面と前記第2のガラス基板の前記表面とを対向させつつ、前記封着材料層を介して前記第1のガラス基板と前記第2のガラス基板とを積層する工程と、
前記第1のガラス基板または前記第2のガラス基板を通して前記封着材料層にレーザ光を照射し、前記封着材料層を溶融させて前記第1のガラス基板と前記第2のガラス基板との間に設けられた電子素子部を封止する封着層を形成する工程とを具備する電子デバイスの製造方法であって、
前記封着材料層は、封着ガラスとレーザ吸収材と任意に低膨張充填材とを含有し、前記レーザ吸収材と任意成分である低膨張充填材との合計の含有量が2~44体積%の範囲である封着用ガラス材料を焼成した材料からなり、
かつ、前記封着材料層の材料の熱膨張係数α1と前記第1のガラス基板および前記第2のガラス基板のうちの少なくとも一方の熱膨張係数α2との差が15~65(×10-7/℃)の範囲であることを特徴とする電子デバイスの製造方法。 - 前記第1のガラス基板の熱膨張係数α21および前記第2のガラス基板の熱膨張係数α22は、いずれも前記封着材料層の材料の熱膨張係数α1との差が15~65(×10-7/℃)の範囲であることを特徴とする請求項12記載の電子デバイスの製造方法。
- 前記第1のガラス基板の熱膨張係数α21および前記第2のガラス基板の熱膨張係数α22のいずれか一方の熱膨張係数は、前記封着材料層の材料の熱膨張係数α1との差が15~65(×10-7/℃)の範囲であり、かつ他方の熱膨張係数は、前記封着材料層の材料の熱膨張係数α1との差が15×10-7/℃未満であることを特徴とする請求項12記載の電子デバイスの製造方法。
- 前記封着用ガラス材料内におけるレーザ吸収材と低膨張充填材の合計の表面積が0.5~6m2/cm3の範囲であることを特徴とする請求項12ないし請求項14のいずれか1項記載の電子デバイスの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG2011093184A SG176881A1 (en) | 2009-06-30 | 2010-06-29 | Glass member with sealing material layer, electronic device using same, and method for manufacturing the electronic device |
JP2011520936A JP5418594B2 (ja) | 2009-06-30 | 2010-06-29 | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 |
CN201080029144.XA CN102471151B (zh) | 2009-06-30 | 2010-06-29 | 带密封材料层的玻璃构件以及使用该构件的电子器件及其制造方法 |
US13/341,188 US8697242B2 (en) | 2009-06-30 | 2011-12-30 | Glass member provided with sealing material layer, electronic device using it and process for producing the electronic device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-154954 | 2009-06-30 | ||
JP2009154954 | 2009-06-30 | ||
JP2010015143 | 2010-01-27 | ||
JP2010-015143 | 2010-01-27 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/341,188 Continuation US8697242B2 (en) | 2009-06-30 | 2011-12-30 | Glass member provided with sealing material layer, electronic device using it and process for producing the electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011001987A1 true WO2011001987A1 (ja) | 2011-01-06 |
Family
ID=43411059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/061075 WO2011001987A1 (ja) | 2009-06-30 | 2010-06-29 | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8697242B2 (ja) |
JP (1) | JP5418594B2 (ja) |
KR (1) | KR20120104922A (ja) |
CN (1) | CN102471151B (ja) |
SG (1) | SG176881A1 (ja) |
TW (1) | TWI482743B (ja) |
WO (1) | WO2011001987A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013015414A1 (ja) * | 2011-07-27 | 2013-01-31 | 日本電気硝子株式会社 | 封着材料層付きガラス基板、これを用いた有機elデバイス、及び電子デバイスの製造方法 |
JP2013049613A (ja) * | 2011-07-29 | 2013-03-14 | Nippon Electric Glass Co Ltd | 封着材料層付きガラス基板の製造方法 |
JP2013053032A (ja) * | 2011-09-02 | 2013-03-21 | Asahi Glass Co Ltd | 気密部材とその製造方法 |
JP2013170114A (ja) * | 2012-02-23 | 2013-09-02 | Nippon Electric Glass Co Ltd | 封着材料層付きガラス基板及びそれを用いたガラスパッケージ |
JP2015120623A (ja) * | 2013-12-24 | 2015-07-02 | 旭硝子株式会社 | 封着材料、封着材料層付き基板およびその製造方法、ならびに封着体 |
WO2016185776A1 (ja) * | 2015-05-18 | 2016-11-24 | 株式会社日立製作所 | 複層ガラス |
JP2016213182A (ja) * | 2015-04-28 | 2016-12-15 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | ディスプレイ装置シーリング用組成物、それを含んだ有機発光ディスプレイ装置、及びその製造方法 |
JP2017057139A (ja) * | 2012-11-30 | 2017-03-23 | コーニング インコーポレイテッド | 過渡吸収特性を有する透明材を用いたガラス封止 |
KR20170076774A (ko) * | 2014-10-31 | 2017-07-04 | 코닝 인코포레이티드 | 레이저 용접 유리 패키지 및 그 제조 방법 |
CN110739337A (zh) * | 2019-10-24 | 2020-01-31 | 云谷(固安)科技有限公司 | 柔性基板、显示面板及显示面板的制备方法 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5308718B2 (ja) | 2008-05-26 | 2013-10-09 | 浜松ホトニクス株式会社 | ガラス溶着方法 |
WO2009150976A1 (ja) * | 2008-06-11 | 2009-12-17 | 浜松ホトニクス株式会社 | ガラス溶着方法 |
DE112009001456T5 (de) * | 2008-06-23 | 2011-05-19 | Hamamatsu Photonics K.K., Hamamatsu-shi | Glasverschmelzungsverfahren |
JPWO2011010489A1 (ja) * | 2009-07-23 | 2012-12-27 | 旭硝子株式会社 | 封着材料層付きガラス部材の製造方法及び製造装置、並びに電子デバイスの製造方法 |
JP5481167B2 (ja) * | 2009-11-12 | 2014-04-23 | 浜松ホトニクス株式会社 | ガラス溶着方法 |
JP5481173B2 (ja) * | 2009-11-25 | 2014-04-23 | 浜松ホトニクス株式会社 | ガラス溶着方法及びガラス層定着方法 |
JP5535590B2 (ja) | 2009-11-25 | 2014-07-02 | 浜松ホトニクス株式会社 | ガラス溶着方法及びガラス層定着方法 |
JP5535588B2 (ja) | 2009-11-25 | 2014-07-02 | 浜松ホトニクス株式会社 | ガラス溶着方法及びガラス層定着方法 |
JP5535589B2 (ja) * | 2009-11-25 | 2014-07-02 | 浜松ホトニクス株式会社 | ガラス溶着方法及びガラス層定着方法 |
JP5525246B2 (ja) | 2009-11-25 | 2014-06-18 | 浜松ホトニクス株式会社 | ガラス溶着方法及びガラス層定着方法 |
JP5466929B2 (ja) * | 2009-11-25 | 2014-04-09 | 浜松ホトニクス株式会社 | ガラス溶着方法及びガラス層定着方法 |
JP5567319B2 (ja) | 2009-11-25 | 2014-08-06 | 浜松ホトニクス株式会社 | ガラス溶着方法及びガラス層定着方法 |
JP5481172B2 (ja) | 2009-11-25 | 2014-04-23 | 浜松ホトニクス株式会社 | ガラス溶着方法及びガラス層定着方法 |
WO2011158805A1 (ja) * | 2010-06-14 | 2011-12-22 | 旭硝子株式会社 | 封着材料ペーストとそれを用いた電子デバイスの製造方法 |
CN102757182B (zh) * | 2012-08-06 | 2014-12-10 | 西安创联宏晟电子有限公司 | 低温低膨胀系数高硬度无铅电子玻璃粉及其制备方法 |
JP6036152B2 (ja) * | 2012-10-18 | 2016-11-30 | 日立化成株式会社 | 電子部品及びその製法、封止材料ペースト、フィラー粒子 |
WO2014113617A1 (en) | 2013-01-21 | 2014-07-24 | Innovative Finishes LLC | Refurbished component, electronic device including the same, and method of refurbishing a component of an electronic device |
EP2994437A1 (en) | 2013-05-10 | 2016-03-16 | Corning Incorporated | Laser welding transparent glass sheets using low melting glass or thin absorbing films |
CN109071325B (zh) * | 2013-05-10 | 2022-04-29 | 康宁股份有限公司 | 包含透明激光焊接区域的密封装置 |
WO2015024008A1 (en) * | 2013-08-16 | 2015-02-19 | Qd Vision, Inc. | Methods for making optical components, optical components, and products including same |
CN103715371A (zh) * | 2013-12-16 | 2014-04-09 | 京东方科技集团股份有限公司 | 一种封装方法及显示装置 |
FI125807B (fi) | 2014-04-17 | 2016-02-29 | Primoceler Oy | Menetelmä kahden substraattikappaleen hitsaamiseksi yhteen fokusoidun lasersäteen avulla |
US10513455B2 (en) | 2014-10-30 | 2019-12-24 | Corning Incorporated | Method and apparatus for sealing the edge of a glass article |
CN107107560B (zh) | 2014-10-30 | 2019-02-19 | 康宁股份有限公司 | 层压玻璃制品边缘的强化方法和利用该方法形成的层压玻璃制品 |
JP2017537616A (ja) | 2014-11-14 | 2017-12-21 | コーニング インコーポレイテッド | インビトロ転写後のrna精製のための方法及びキット |
WO2017051590A1 (ja) * | 2015-09-25 | 2017-03-30 | 株式会社日立製作所 | 接合材及びそれを用いた接合体 |
US10647608B2 (en) * | 2016-01-08 | 2020-05-12 | Yej Glass Co., Ltd. | Fluorinated tin-based glass frit and method for manufacturing same |
EP3426616A1 (en) * | 2016-03-10 | 2019-01-16 | Corning Incorporated | Sealed devices comprising transparent laser weld regions |
WO2020184014A1 (ja) * | 2019-03-13 | 2020-09-17 | Agc株式会社 | 合わせガラス |
DE102019119195A1 (de) | 2019-07-16 | 2021-01-21 | Schott Ag | Hermetisch verschlossene gehärtete Glasumhäusung und Verfahren zu deren Herstellung |
DE102019119961A1 (de) | 2019-07-24 | 2021-01-28 | Schott Ag | Hermetisch verschlossene transparente Kavität und deren Umhäusung |
CN115305035B (zh) * | 2021-05-08 | 2024-08-20 | 深圳市首骋新材料科技有限公司 | 用于oled密封的玻璃胶、oled元件的封装方法、oled器件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006524419A (ja) * | 2003-04-16 | 2006-10-26 | コーニング インコーポレイテッド | フリットにより密封されたガラスパッケージおよびその製造方法 |
JP2008115057A (ja) * | 2006-11-07 | 2008-05-22 | Electric Power Dev Co Ltd | 封止材料、ガラスパネルの製造方法および色素増感太陽電池 |
JP2010052990A (ja) * | 2008-08-28 | 2010-03-11 | Yamato Denshi Kk | 封着用無鉛ガラス材とこれを用いた有機elディスプレイパネル |
WO2010061853A1 (ja) * | 2008-11-26 | 2010-06-03 | 旭硝子株式会社 | 封着材料層付きガラス部材およびそれを用いた電子デバイスとその製造方法 |
WO2010067848A1 (ja) * | 2008-12-12 | 2010-06-17 | 旭硝子株式会社 | 封着ガラス、封着材料層付きガラス部材、および電子デバイスとその製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5346863A (en) * | 1992-12-11 | 1994-09-13 | Nippon Electric Glass Co., Ltd. | Low temperature sealing composition |
US5714840A (en) * | 1995-03-07 | 1998-02-03 | Asahi Glass Company Ltd. | Plasma display panel |
US6355586B1 (en) * | 1999-02-25 | 2002-03-12 | Asahi Glass Company, Limited | Low melting point glass and glass ceramic composition |
EP1361199B1 (en) * | 2002-04-24 | 2008-01-09 | Central Glass Company, Limited | Lead-free low-melting glass |
WO2005007591A1 (ja) * | 2003-07-18 | 2005-01-27 | Asahi Glass Company, Limited | 無鉛ガラス、電極被覆用ガラス粉末およびプラズマディスプレイ装置 |
JP4774721B2 (ja) * | 2004-11-12 | 2011-09-14 | 旭硝子株式会社 | 低融点ガラスおよび封着用組成物ならびに封着用ペースト |
US7291573B2 (en) * | 2004-11-12 | 2007-11-06 | Asahi Techno Glass Corporation | Low melting glass, sealing composition and sealing paste |
KR100911965B1 (ko) * | 2005-12-06 | 2009-08-13 | 코닝 인코포레이티드 | 프릿으로 밀봉된 유리 패키지 및 그 제조 방법 |
US7597603B2 (en) * | 2005-12-06 | 2009-10-06 | Corning Incorporated | Method of encapsulating a display element |
KR100685853B1 (ko) * | 2006-01-25 | 2007-02-22 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
KR100688790B1 (ko) * | 2006-01-27 | 2007-03-02 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치 및 그 제조 방법 |
US8071183B2 (en) * | 2006-06-02 | 2011-12-06 | Hitachi Displays, Ltd. | Display apparatus |
US20080124558A1 (en) * | 2006-08-18 | 2008-05-29 | Heather Debra Boek | Boro-silicate glass frits for hermetic sealing of light emitting device displays |
US7439201B2 (en) * | 2006-08-29 | 2008-10-21 | Corning Incorporation | Lead-free frits for plasma displays and other glass devices utilizing glass sealing materials |
JP2008251325A (ja) * | 2007-03-30 | 2008-10-16 | Hitachi Ltd | プラズマディスプレイパネル及びその製造方法 |
JP5525714B2 (ja) * | 2008-02-08 | 2014-06-18 | 日立粉末冶金株式会社 | ガラス組成物 |
KR101273782B1 (ko) * | 2008-02-27 | 2013-06-12 | 아사히 가라스 가부시키가이샤 | 기판용 유리 조성물 |
JP5552743B2 (ja) * | 2008-03-28 | 2014-07-16 | 旭硝子株式会社 | フリット |
WO2010055888A1 (ja) * | 2008-11-14 | 2010-05-20 | 旭硝子株式会社 | 封着材料層付きガラス部材の製造方法と電子デバイスの製造方法 |
JP5414409B2 (ja) * | 2009-01-16 | 2014-02-12 | 日立粉末冶金株式会社 | 低融点ガラス組成物、それを用いた低温封着材料及び電子部品 |
WO2010137667A1 (ja) | 2009-05-28 | 2010-12-02 | 旭硝子株式会社 | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 |
JPWO2011010489A1 (ja) * | 2009-07-23 | 2012-12-27 | 旭硝子株式会社 | 封着材料層付きガラス部材の製造方法及び製造装置、並びに電子デバイスの製造方法 |
-
2010
- 2010-06-29 KR KR1020117024549A patent/KR20120104922A/ko not_active Application Discontinuation
- 2010-06-29 WO PCT/JP2010/061075 patent/WO2011001987A1/ja active Application Filing
- 2010-06-29 JP JP2011520936A patent/JP5418594B2/ja active Active
- 2010-06-29 SG SG2011093184A patent/SG176881A1/en unknown
- 2010-06-29 CN CN201080029144.XA patent/CN102471151B/zh active Active
- 2010-06-30 TW TW099121433A patent/TWI482743B/zh active
-
2011
- 2011-12-30 US US13/341,188 patent/US8697242B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006524419A (ja) * | 2003-04-16 | 2006-10-26 | コーニング インコーポレイテッド | フリットにより密封されたガラスパッケージおよびその製造方法 |
JP2008115057A (ja) * | 2006-11-07 | 2008-05-22 | Electric Power Dev Co Ltd | 封止材料、ガラスパネルの製造方法および色素増感太陽電池 |
JP2010052990A (ja) * | 2008-08-28 | 2010-03-11 | Yamato Denshi Kk | 封着用無鉛ガラス材とこれを用いた有機elディスプレイパネル |
WO2010061853A1 (ja) * | 2008-11-26 | 2010-06-03 | 旭硝子株式会社 | 封着材料層付きガラス部材およびそれを用いた電子デバイスとその製造方法 |
WO2010067848A1 (ja) * | 2008-12-12 | 2010-06-17 | 旭硝子株式会社 | 封着ガラス、封着材料層付きガラス部材、および電子デバイスとその製造方法 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103459341B (zh) * | 2011-07-27 | 2016-05-11 | 日本电气硝子株式会社 | 带有封接材料层的玻璃基板、使用其的有机el器件、及电子器件的制造方法 |
WO2013015414A1 (ja) * | 2011-07-27 | 2013-01-31 | 日本電気硝子株式会社 | 封着材料層付きガラス基板、これを用いた有機elデバイス、及び電子デバイスの製造方法 |
CN103459341A (zh) * | 2011-07-27 | 2013-12-18 | 日本电气硝子株式会社 | 带有封接材料层的玻璃基板、使用其的有机el器件、及电子器件的制造方法 |
US9469562B2 (en) | 2011-07-27 | 2016-10-18 | Nippon Electric Glass Co., Ltd. | Glass substrate with sealing material layer, organic EL device using same, and manufacturing method for electronic device |
JP2013049613A (ja) * | 2011-07-29 | 2013-03-14 | Nippon Electric Glass Co Ltd | 封着材料層付きガラス基板の製造方法 |
JP2013053032A (ja) * | 2011-09-02 | 2013-03-21 | Asahi Glass Co Ltd | 気密部材とその製造方法 |
JP2013170114A (ja) * | 2012-02-23 | 2013-09-02 | Nippon Electric Glass Co Ltd | 封着材料層付きガラス基板及びそれを用いたガラスパッケージ |
JP2017057139A (ja) * | 2012-11-30 | 2017-03-23 | コーニング インコーポレイテッド | 過渡吸収特性を有する透明材を用いたガラス封止 |
JP2015120623A (ja) * | 2013-12-24 | 2015-07-02 | 旭硝子株式会社 | 封着材料、封着材料層付き基板およびその製造方法、ならびに封着体 |
KR20170076774A (ko) * | 2014-10-31 | 2017-07-04 | 코닝 인코포레이티드 | 레이저 용접 유리 패키지 및 그 제조 방법 |
KR102512044B1 (ko) | 2014-10-31 | 2023-03-20 | 코닝 인코포레이티드 | 레이저 용접 유리 패키지 및 그 제조 방법 |
JP7067854B2 (ja) | 2015-04-28 | 2022-05-16 | 三星ディスプレイ株式會社 | ディスプレイ装置シーリング用組成物、それを含んだ有機発光ディスプレイ装置、及びその製造方法 |
JP2016213182A (ja) * | 2015-04-28 | 2016-12-15 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | ディスプレイ装置シーリング用組成物、それを含んだ有機発光ディスプレイ装置、及びその製造方法 |
WO2016185776A1 (ja) * | 2015-05-18 | 2016-11-24 | 株式会社日立製作所 | 複層ガラス |
US10566503B2 (en) | 2015-05-18 | 2020-02-18 | Hitachi, Ltd. | Multilayer glass |
JPWO2016185776A1 (ja) * | 2015-05-18 | 2018-03-29 | 株式会社日立製作所 | 複層ガラス |
CN110739337A (zh) * | 2019-10-24 | 2020-01-31 | 云谷(固安)科技有限公司 | 柔性基板、显示面板及显示面板的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5418594B2 (ja) | 2014-02-19 |
CN102471151A (zh) | 2012-05-23 |
TWI482743B (zh) | 2015-05-01 |
JPWO2011001987A1 (ja) | 2012-12-13 |
TW201116497A (en) | 2011-05-16 |
KR20120104922A (ko) | 2012-09-24 |
US20120147538A1 (en) | 2012-06-14 |
SG176881A1 (en) | 2012-02-28 |
CN102471151B (zh) | 2015-04-01 |
US8697242B2 (en) | 2014-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5418594B2 (ja) | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 | |
JP5494831B2 (ja) | 封着材料層付きガラス部材とそれを用いた電子デバイス及びその製造方法 | |
JP5673102B2 (ja) | 封着材料層付きガラス部材およびそれを用いた電子デバイスとその製造方法 | |
JP5413373B2 (ja) | レーザ封着用ガラス材料、封着材料層付きガラス部材、および電子デバイスとその製造方法 | |
JP5716743B2 (ja) | 封着材料ペーストとそれを用いた電子デバイスの製造方法 | |
WO2010055888A1 (ja) | 封着材料層付きガラス部材の製造方法と電子デバイスの製造方法 | |
JP2010228998A (ja) | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 | |
WO2011158873A1 (ja) | 電子デバイス | |
JP2012041196A (ja) | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 | |
WO2012117978A1 (ja) | 気密部材とその製造方法 | |
TWI462829B (zh) | Glass member having sealing material layer and method for manufacturing the same, and electronic device and manufacturing method thereof | |
WO2014092013A1 (ja) | 封着材料、封着材料層付き基板、積層体および電子デバイス | |
CN111302629B (zh) | 玻璃组合物、玻璃粉末、封接材料、玻璃糊、封接方法、封接封装体和有机电致发光元件 | |
JP2011126722A (ja) | レーザ封着用封着材料、封着材料層付きガラス部材、およびそれを用いた太陽電池とその製造方法 | |
JP2011011925A (ja) | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 | |
WO2010137667A1 (ja) | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 | |
JP2012014971A (ja) | 電子デバイス及びその製造方法 | |
TW202145615A (zh) | 密封封裝及有機電激發光元件 | |
JP2014221695A (ja) | 封着パッケージ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080029144.X Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10794156 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011520936 Country of ref document: JP |
|
ENP | Entry into the national phase |
Ref document number: 20117024549 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10794156 Country of ref document: EP Kind code of ref document: A1 |