WO2011001739A1 - 陽極壁多分割型プラズマ発生装置及びプラズマ処理装置 - Google Patents
陽極壁多分割型プラズマ発生装置及びプラズマ処理装置 Download PDFInfo
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- WO2011001739A1 WO2011001739A1 PCT/JP2010/057770 JP2010057770W WO2011001739A1 WO 2011001739 A1 WO2011001739 A1 WO 2011001739A1 JP 2010057770 W JP2010057770 W JP 2010057770W WO 2011001739 A1 WO2011001739 A1 WO 2011001739A1
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- QWHNJUXXYKPLQM-UHFFFAOYSA-N CC1(C)CCCC1 Chemical compound CC1(C)CCCC1 QWHNJUXXYKPLQM-UHFFFAOYSA-N 0.000 description 1
- 0 CC1(C*)CCCC1 Chemical compound CC1(C*)CCCC1 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
Definitions
- a plasma constituent material supply source is a cathode
- a cylindrical anode is provided in front of or around the cathode
- a vacuum arc discharge is performed between the cathode and the anode in a vacuum atmosphere to generate plasma from the cathode surface.
- the present invention relates to a plasma generation apparatus that generates a plasma and a plasma processing apparatus that performs plasma processing such as film formation on the anode using plasma generated by the plasma generation apparatus.
- the present invention relates to an anode wall multi-divided plasma generator and a plasma processing apparatus using the same.
- a solid can be improved by forming a thin film on the surface of the solid material or implanting ions in plasma.
- a film formed using a plasma containing metal ions or non-metal ions enhances the wear resistance and corrosion resistance of the solid surface, and is useful as a protective film, an optical thin film, a transparent conductive film, and the like.
- a carbon film using carbon plasma has a high utility value as a diamond-like carbon film (referred to as a DLC film) made of an amorphous mixed crystal having a diamond structure and a graphite structure.
- the vacuum arc plasma is a plasma formed by an arc discharge generated between the cathode and the anode, and the cathode material evaporates from the cathode spot existing on the cathode surface.
- reactive gas is introduce
- reactive gas is also ionized simultaneously.
- An inert gas (referred to as a rare gas) may be introduced together with the reactive gas, or the inert gas may be introduced instead of the reactive gas.
- surface treatment can be performed by forming a thin film on a solid surface or implanting ions.
- vacuum arc plasma constituent particles such as cathode material ions, electrons, and cathode material neutral atomic groups (atoms and molecules) are emitted from the cathode spot, and at the same time, from sub-micron to several hundred microns (0. 0).
- Cathode material fine particles called droplets having a size of 01 to 1000 ⁇ m) are also emitted.
- FIG. 21 is a schematic configuration diagram of a conventional plasma processing apparatus according to Patent Document 1.
- the plasma generator 200 is connected to a power source 205 for generating electric spark and vacuum arc discharge, and plasma stabilizing magnetic field generators 206 and 207 for stabilizing the plasma 204 are disposed.
- the plasma 204 is guided from the plasma generation unit 200 to the plasma processing unit 208, and the workpiece 209 disposed in the plasma processing unit 208 is surface-treated by the plasma 204.
- a reactive gas is introduced as necessary by the gas introduction system 210 connected to the plasma processing unit 208, and the reactive gas and the plasma flow are exhausted by the gas exhaust system 211.
- the plasma 204 emitted from the plasma generation unit 200 is bent in a T shape in a direction not facing the plasma generation unit 200 by a magnetic field and flows into the plasma processing unit 208.
- a droplet collection unit 212 for collecting cathode material fine particles (droplets) 213 that are by-produced from the cathode when the plasma 204 is generated is disposed.
- the droplets 213 that are not affected by the magnetic field travel to the droplet collection unit 212 and are collected, and the droplets 213 are prevented from entering the plasma processing unit 208.
- an anode 203 composed of a cylindrical electrode cylinder 214 extending in front of the cathode 201 is used.
- FIG. 22 shows the inner wall surface of a conventional electrode cylinder 214.
- a plurality of ring-shaped protrusions 216 are provided by cutting a plurality of annular grooves 215.
- an object of the present invention is to provide an anode wall multi-divided plasma generator capable of preventing deposits deposited and deposited on the anode inner wall by diffusion plasma from peeling off and short-circuiting between the cathode and the anode, and A plasma processing apparatus using the same is provided.
- the present inventor succeeded in miniaturizing the carbon flakes by dividing the inner wall of the anode and solved the problem. I arrived.
- a plasma constituent material supply source is a cathode
- a cylindrical anode is provided in front of or around the cathode
- vacuum arc discharge is performed between the cathode and the anode in a vacuum atmosphere.
- the plasma generator for generating plasma from the cathode surface a large number of irregularities are provided on the inner wall of the cylinder forming the anode, and a part of the plasma emitted from the cathode to the anode side adheres to the irregularities and accumulates In this case, the deposit is peeled off from the anode as fine pieces.
- a second mode of the present invention is the plasma generator according to the first mode, wherein the longest length of the projections and depressions is shorter than the width of the gap between the cylindrical inner wall and the outer periphery of the cathode.
- a third aspect of the present invention is a plasma generator according to the first or second aspect, wherein a large number of the irregularities are formed by any of a lattice pattern, a diagonal pattern, and an island pattern.
- a fourth aspect of the present invention is the first, second, or third aspect, wherein the region close to the cathode is the formation region of the concavo-convex pattern among the cylindrical inner walls forming the anode, and the remaining cylindrical inner walls are
- the plasma generator has an annular groove pattern in which a plurality of annular grooves are formed in the forward direction of the cathode.
- the fifth aspect of the present invention is the plasma according to any one of the first to fourth aspects, wherein an annular recess is formed around the cathode, and the fine pieces peeled off from the anode are stored and recovered in the recess. Generator.
- the fine piece storage portion is provided below the cathode, and an open portion communicating with the storage portion is provided around the cathode.
- the plasma generator is configured to store and collect the fine pieces formed and peeled off from the anode in the storage section through the open section.
- a seventh aspect of the present invention is supplied from the plasma generator according to any one of the first to sixth aspects, a plasma transport pipe for transporting the plasma generated by the plasma generator, and the plasma transport pipe
- a plasma processing apparatus includes a plasma processing unit that processes an object to be processed with plasma.
- a start-end-side insulator is interposed between the plasma outlet of the cylindrical tube of the anode and the plasma transport tube, and between the plasma transport tube and the plasma processing unit.
- the plasma generator, the plasma transport pipe, and the plasma processing unit are electrically independent from each other with a terminal-side insulator interposed therebetween, and the plasma generator with respect to the plasma transport pipe is separated from the plasma processing unit.
- This is a plasma processing apparatus that cuts off electrical influences.
- the plasma transport tube includes a plasma straight tube connected to the plasma generator, and a first plasma connected in a bent shape to the plasma straight tube.
- a progressing tube, a second plasma advancing tube connected to the end of the first plasma advancing tube at a predetermined bending angle with respect to the tube axis, and a bent shape at the end of the second plasma advancing tube It is composed of a third plasma advancing tube that is connected and discharges plasma from the plasma outlet, and the total length L until the plasma reaches the object to be processed from the target surface satisfies 900 mm ⁇ L ⁇ 1350 mm. It is a plasma processing apparatus to be set.
- the plasma outlet side of the first plasma advancing tube is not transparently seen from the plasma outlet of the third plasma advancing tube.
- This is a plasma processing apparatus in which the second plasma advancing tubes are geometrically arranged.
- an elevation angle from a tube cross-sectional upper end on the plasma inlet side of the third plasma advancing tube to a tube cross-sectional lower end on the plasma outlet side of the first plasma advancing tube is ⁇
- a plasma treatment that satisfies ⁇ ⁇ ⁇ 0 when ⁇ 0 is an elevation angle from the lower end of the cross section on the plasma outlet side of the third plasma advancing tube to the upper end of the cross section on the plasma outlet side of the second plasma advancing tube Device.
- the plasma straight tube, the first plasma traveling tube, the second plasma traveling tube, and the third plasma traveling tube are each provided with plasma.
- Plasma transfer magnetic field generating means for generating a transfer magnetic field is provided, and deflection magnetic field generation means for deflecting the plasma transfer magnetic field is attached to the first plasma advancing tube and / or the second plasma advancing tube, and the deflection The plasma processing apparatus deflects the plasma flow toward the tube center side by a deflection magnetic field generated by the magnetic field generation means.
- a large number of the irregularities are provided on the inner wall of the cylinder forming the anode to divide it into multiple parts, and the diffusion plasma adheres to and deposits on the anode by the deposit separation action of the numerous irregularities. Even in this case, a large or long deposit is not generated, and the deposit as a fine piece is peeled off from the anode, so that the deposit can be peeled off and bridged across the cathode and the anode. Therefore, the occurrence of a short circuit phenomenon between the two electrodes can be prevented, which contributes to stable driving of the plasma generator and improvement of operating efficiency.
- the arrangement of the anode in the present invention can be carried out when it is located in front of the cathode or in an arrangement form surrounding a part or all of the cathode.
- the cylindrical structure of the anode is not limited to a tubular structure having a constant inner diameter, and the present invention can be applied to a structure having an inner wall structure having a truncated cone shape.
- the longest length of the projections of the unevenness is made shorter than the width of the gap between the inner wall of the cylinder and the outer periphery of the cathode, so that deposits larger than the gap are peeled off.
- the occurrence of a short circuit between the cathode and the anode can be prevented without causing a cross-linking phenomenon due to the deposit.
- the third aspect of the present invention since a large number of the irregularities are formed by any of a grid pattern, an oblique pattern, and an island pattern, it is possible to realize multi-segmentation of the cylinder inner wall that forms the anode,
- the deposit can be made fine by the deposit separation action of each pattern, and the occurrence of a short-circuit phenomenon between the cathode and the anode can be prevented without causing a crosslinking phenomenon due to the deposit.
- the amount of deposition by diffusion plasma tends to increase around the cathode, which is a supply source of plasma constituent materials. Therefore, according to the fourth embodiment of the present invention, attention is paid to this deposition tendency, and the finer deposit is realized by using the region near the cathode in the inner wall of the cylinder forming the anode as the formation region of the concave / convex pattern.
- An annular groove pattern in which a plurality of annular grooves are engraved in the forward direction of the cathode is formed on the remaining inner wall of the cylinder, and an area of the anode protrusion formed by the annular groove pattern is secured, so that the vacuum arc Since the generation is induced with high efficiency, it is possible to prevent the occurrence of a short-circuit phenomenon between the cathode and the anode and to improve the plasma generation efficiency.
- an annular recess is formed around the cathode, and the fine pieces peeled off from the anode are stored and collected in the recess. Therefore, the fine pieces peeled off around the cathode It is possible to prevent the occurrence of a short circuit phenomenon between the cathode and the anode without fail, without the pieces being deposited and contacting the cathode.
- the fine piece storage portion is provided below the cathode, and an open portion communicating with the storage portion is formed around the cathode, and the fine piece peeled off from the anode Since the pieces are stored and collected in the storage portion through the open portion, the fine pieces peeled off around the cathode are not deposited at all, and the occurrence of a short-circuit phenomenon between the cathode and the anode can be more reliably prevented.
- the plasma generated by the plasma generator according to any one of the first to sixth aspects is supplied to the plasma processing unit via the plasma transport tube, and the plasma is When performing a film forming process or the like, the plasma generator can be stably operated without causing a short-circuit phenomenon between the cathode and the anode, and the processing efficiency of the film forming process can be improved.
- Such droplets include charged droplets (positive droplets and negative droplets) charged with positive electricity and / or negative electricity, and neutral droplets that are not charged.
- the plasma processing apparatus includes a large number of the anodes having the irregularities, and the operation efficiency is improved by preventing the flaking of large carbon flakes without reducing the plasma generation efficiency.
- the eighth to twelfth embodiments it is possible to take measures for removing neutral droplets and charged droplets, and to achieve high purity of the generated plasma.
- a start-side insulator is interposed between the plasma generation unit and the plasma transport tube, and a termination-side insulator is interposed between the plasma transport tube and the plasma processing unit.
- the plasma generation unit, the plasma transport tube, and the plasma processing unit become completely electrically independent.
- the electrical influence from the plasma generation unit and the plasma processing unit on the plasma transport tube is completely cut off, and the plasma transport tube generally formed of metal has the same potential as a whole, and the potential difference between the plasma transport tube is not exist. Since there is no potential difference, no electric force is generated on the charged particles based on the potential difference.
- the charged droplet is a kind of charged particles, no electric force acts on the charged droplet in the plasma transport tube in the same potential state, and the charged droplet can be handled in the same manner as the neutral droplet. Therefore, the charged droplets can be removed together with the neutral droplets while traveling through the plasma transport tube by the geometrical removal method of neutral droplets described later. Therefore, the plasma supplied from the plasma transport tube becomes high-purity plasma from which neutral droplets and charged droplets are removed by the neutral droplet removal structure, and this high-purity plasma causes the object to be processed in the plasma processing section to be processed. On the other hand, high-purity plasma treatment can be made possible.
- the plasma transport tube includes: a plasma straight tube connected to the plasma generator; a first plasma travel tube connected to the plasma straight tube in a bent shape; 1 a second plasma advancing tube connected to the end of the plasma advancing tube at a predetermined bending angle with respect to the tube axis; and a second plasma advancing tube connected to the end of the second plasma advancing tube in a bent shape;
- a plasma generation apparatus is provided that is bent in three stages from a third plasma advancing tube that discharges plasma, and the total length L from the target surface to the object to be processed is set to satisfy 900 mm ⁇ L ⁇ 1350 mm.
- L L0 + L1 + L2 + L3 + L4.
- the film formation rate can be improved by shortening the path compared with the curved plasma traveling path, and it is possible to increase the efficiency by the geometric structure of the three-stage bending path rather than simply shortening the straight path.
- the charged droplets can be removed with high efficiency by the geometric structure as described above, and high-purity plasma that can be realized to improve surface treatment accuracy such as film formation can be generated.
- the second plasma advancing tube is inclined at the bending angle (inclination angle). When the inclination angle is large, the droplets can be blocked, but the plasma density decreases, so the deposition rate on the surface of the object to be processed decreases. To do.
- the inclination angle can be appropriately selected depending on the relationship between the film forming speed and the tolerance of the droplet.
- the three-stage bending path by the plasma straight tube, the first plasma advancing tube, the second plasma advancing tube, and the third plasma advancing tube may be configured by connecting the tubes on the same plane. Alternatively, it is configured by spatially arranging in three dimensions.
- the second plasma advancing tube is geometrically arranged at a position where the plasma outlet side of the first plasma advancing tube is not seen in a straight line from the plasma outlet of the third plasma advancing tube. Therefore, the droplets derived from the first plasma advancing tube are not directly discharged from the plasma outlet of the third plasma advancing tube, but are formed on the path inner wall in the three-stage bending path process. Since it adheres and is removed by collision, the droplets adhering to the object to be processed can be greatly reduced, and plasma processing with high-purity plasma from which droplets have been removed with high efficiency becomes possible.
- the outlet of the third plasma advancing tube may be directly connected to the outer wall surface of the plasma processing unit, or may be disposed so as to be immersed in the outer wall surface. Furthermore, a rectifying tube or a deflection vibration tube may be interposed between the second plasma advancing tube and the third plasma advancing tube while maintaining the positional relationship between the outlet of the third plasma advancing tube and the outer wall surface.
- an elevation angle from a tube cross-section upper end on the plasma inlet side of the third plasma advancing tube to a tube cross-section lower end on the plasma outlet side of the first plasma advancing tube is ⁇
- the third plasma Since ⁇ ⁇ ⁇ 0 is satisfied when ⁇ 0 is an elevation angle from the lower end of the cross section on the plasma outlet side of the advancing tube to the upper end of the cross section on the plasma outlet side of the second plasma advancing tube, ⁇ ⁇ ⁇ 0 is satisfied.
- the second plasma advancing tube can be arranged at a position where the plasma outlet side of the first plasma advancing tube is not seen in a straight line from the plasma outlet.
- the droplet derived from the first plasma advancing tube is directly connected to the plasma outlet of the third plasma advancing tube. Therefore, it is possible to realize a plasma process using high-purity plasma from which droplets are removed with high efficiency.
- the outlet of the third plasma advancing tube may be directly connected to the outer wall surface of the plasma processing unit, or may be disposed so as to be immersed in the outer wall surface.
- a rectifying tube or a deflection vibration tube may be interposed between the second plasma advancing tube and the third plasma advancing tube.
- a plasma transfer magnetic field is generated in each of the straight plasma advance tube, the first plasma advance tube, the second plasma advance tube, and the third plasma advance tube.
- a deflection magnetic field generated by the deflection magnetic field generation means is provided by providing a magnetic field generation means, and a deflection magnetic field generation means for deflecting the magnetic field for plasma transfer is attached to the first plasma progression tube and / or the second plasma progression tube.
- the non-uniformity of the plasma transfer magnetic field in the connecting portion of the first plasma progress tube and / or the second plasma progress tube that is, the magnetic field coil for generating the plasma transfer magnetic field
- the additional magnetic field becomes stronger inside the bent part due to the configuration of the Induced to, and maintain the plasma density at a high density, it is possible to perform plasma processing using a high density and high purity plasma.
- FIG. 1 is a schematic cross-sectional configuration diagram of a plasma processing apparatus in which a plasma generator 1 according to an embodiment of the present invention is installed.
- 2 is a schematic cross-sectional view of the periphery of a plasma generation unit 4 of the plasma generator 1.
- FIG. 2 is a longitudinal sectional view showing an electrode cylinder of an anode 3 used in the plasma generator 1.
- FIG. 3 is a longitudinal sectional view showing details of an electrode cylinder of an anode 3.
- FIG. It is a pattern diagram which shows the example of the multi-division pattern in the electrode cylinder of this invention.
- It is a longitudinal cross-sectional view which shows the modification which gave multi-segmentation to a part of anode inner wall.
- FIG. 1 is a schematic cross-sectional configuration diagram of a plasma processing apparatus in which a plasma generator 1 of the present invention is installed.
- a supply source of a plasma constituent material is a cathode 2 (target), and a cylindrical anode 3 is disposed in front of the cathode 2.
- the trigger electrode 5 is rotatably provided so as to be able to approach and retract with respect to the cathode 2.
- the anode 3 is composed of an electrode cylinder whose inner wall is multi-divided. An electric spark is generated between the cathode 2 and the trigger electrode 5 in a vacuum atmosphere, and a vacuum arc is generated between the cathode 2 and the anode 3 to generate plasma P.
- Vacuum arc discharge in the plasma generator 4 releases vacuum arc plasma constituent particles such as target material ions, electrons, and cathode material neutral particles (atoms and molecules), and at the same time, from submicron to several hundred microns (0.01 to Cathode material fine particles (hereinafter referred to as “droplet D”) having a size of 1000 ⁇ m are also emitted.
- the generated plasma P travels in the plasma traveling path 6 and travels to the second traveling path by the magnetic field formed by the bending magnetic field generators 8 and 8 in the bending portion 7. At this time, since the droplet D is electrically neutral and not affected by the magnetic field, the droplet D travels straight through the Dopplet traveling path 9 and is collected by the droplet collecting unit 10.
- the bent portion 7 is provided with a straight line connected to the second traveling path, and baffles 11, 12 on which droplets D collide and adhere to the inner walls of the traveling paths of the plasma P such as the Dopplet traveling path 9. 17 is provided.
- a magnetic field generator 18 for generating a plasma traveling magnetic field is installed in the straight line.
- the second traveling path is composed of a diameter expansion tube 13 provided with a plurality of baffles 12 on the inner wall, and a magnetic field generator 20 for generating a plasma traveling magnetic field is installed in the diameter expansion tube 13.
- a magnetic field generator 20 for generating a plasma traveling magnetic field is installed in the diameter expansion tube 13.
- the diameter expansion pipe 13 is inclined with respect to the straight line.
- the end of the expanded diameter tube 13 is connected to the plasma processing unit 15 via the reduced diameter tube 23.
- the plasma P from which the droplets D have been removed is supplied to the plasma processing unit 15 by the magnetic fields of the magnetic field generators 14 and 14, and the workpiece 16 can be plasma processed.
- a baffle 19 is also installed in the reduced diameter tube 23.
- FIG. 2 is a schematic sectional view of the periphery of the plasma generator 4.
- the trigger electrode 5 is composed of a striker that is pivotally supported about a rotating shaft 24.
- a voltage is applied between the anode inner wall 28 and the trigger electrode 5 of the striker and the target of the cathode 2 by the power source 25 through the conducting wires 26 and 27.
- the plasma generating portion outer wall 29 is not in contact with the anode inner wall 28 by the insulating members 30 and 31 attached to the upper and lower ends of the outer wall 29, and is kept electrically neutral.
- a pipe end 33 of the plasma traveling path 6 is connected to the plasma outlet side of the plasma generating part outer wall 29.
- the electrode cylinder of the anode 3 is opened on the cathode 2 side to form a gap 34.
- the insulating member 30 corresponds to a starting end side insulator IS described later.
- a vacuum arc discharge is induced between the discharge surface 32 of the cathode 2 and the anode inner wall 28 by pulling away the striker at the contact position indicated by the solid line in the separation direction.
- the striker swings in response to the rotational drive of a rotational drive source (not shown), and detects the torque reaction force of the striker contacted by the rotational drive source when the striker located at a separated position is brought into contact with the discharge surface 32. It is determined that they are in contact.
- a filter coil 22 is disposed on the plasma outlet side of the plasma generating unit 4 to form a plasma traveling magnetic field B2.
- the stabilizing magnetic field B1 generated by the target coil 21 is formed in a phase (caps) opposite to the plasma traveling magnetic field B2, so that stable plasma can be generated. As shown in (2B) of FIG. 2, when the stabilizing magnetic field B1 generated by the target coil 21 is in-phase (mirror), the stability of the arc spot is reduced, but the plasma generation efficiency is improved. Yes.
- FIG. 3 is a longitudinal sectional view showing an electrode cylinder of the anode 3.
- FIG. 4 is a longitudinal sectional view showing details of the electrode cylinder.
- irregularities are formed in a matrix by vertical and horizontal grooves 37, 38, and a large number of protrusions 35 are formed.
- the protrusion 35 has a curved thin rectangular parallelepiped shape.
- a reservoir 36 larger than the cylinder diameter for collecting carbon flakes is disposed below the gap 34 provided below the electrode cylinder.
- the diffusing material 41 is recrystallized on the wall of the electrode cylinder and is deposited and deposited. Then, the carbon flakes 40 are peeled off.
- the inner wall of the electrode cylinder is divided into a plurality of matrix shapes by the vertical and horizontal grooves 37 and 38, even if diffusion plasma adheres to and deposits on the anode 3, the deposits of many protrusions 35 are separated. Due to the action, the deposit is refined and no large or long deposit is formed at all.
- the fine pieces of the carbon flakes 40 are only peeled off from the protrusions 39 of the small pieces, the deposits are not peeled off and bridged across the cathode 2 and the anode 3, and the short circuit phenomenon between the two electrodes is prevented. Generation can be prevented, which contributes to stable driving of the plasma generator and improvement of operating efficiency.
- the fine carbon flakes 40 fall from the gap 34 around the cathode 2 toward the lower side of the arrow and are collected in the storage unit 36.
- FIG. 5 shows an example of a multi-division pattern in the electrode cylinder.
- (5A) in the figure is a grid-like matrix pattern used in this embodiment.
- the carbon flakes grow in relation to the size of the protrusion surface, and the protrusion 35 is preferably as small as possible to enhance the sediment separation action. If excessive division is performed, the effective electrode surface area decreases, so that the maximum length L of the protrusion 35 is at least shorter than the width R (see FIG. 4) of the gap between the cylinder inner wall and the cathode outer periphery. Just keep it. Even if the carbon flakes corresponding to the length of the flakes are peeled off, the carbon flakes can be reliably dropped and recovered from the open portion of the gap 34.
- the multi-divided pattern in the anode electrode cylinder is not limited to the lattice-like matrix pattern, but is, for example, an oblique pattern shown in the example of (5B) in FIG. 5 or an island-like pattern shown in the example of (5C) in FIG. But you can.
- An example of the oblique pattern is obtained by forming the projecting portion 43 having a curved deformed rectangular parallelepiped shape by engraving the oblique groove 44 on the inner wall of the horizontal groove 45.
- An example of an island-shaped pattern is obtained by forming a hexagonal protrusion 46 by engraving a honeycomb groove 47 on the inner wall of a cylinder.
- the island pattern includes a polka dot pattern of round protrusions.
- the cathode 2 is disposed below the gap 34 as shown by the broken line in FIG.
- An annular recess 42 may be provided to surround the periphery of the glass so as to collect the refined carbon flakes.
- the collection frequency is higher than that of the large storage section 36, there is an advantage that the periphery of the cathode 2 can be configured in a compact manner.
- FIG. 6 shows a modification in which a part of the anode inner wall is divided into multiple sections.
- a half area close to the cathode 2 of the inner wall of the electrode cylinder of the anode 48 is used as a formation area of the lattice-like uneven pattern 49 similar to the above, and a plurality of annular shapes are formed on the remaining half cylinder inner wall.
- An annular groove pattern 50 in which grooves are engraved in the forward direction of the cathode 2 is formed.
- the deposits are made finer by the uneven pattern 49, and the area of the anode protrusion formed by the annular groove pattern 50 is secured on the remaining inner wall of the cylinder, and the vacuum arc Can be induced with high efficiency to prevent the occurrence of a short-circuit between the cathode and the anode and to improve the plasma generation efficiency.
- the plasma generating apparatus 1 having a multi-segmented anode is provided to prevent the flaking of large carbon flakes and to improve the operating efficiency without reducing the plasma generating efficiency. Furthermore, the plasma purification structure that can more efficiently remove neutral droplets and charged droplets is provided.
- a configuration for plasma purification in the plasma processing apparatus of the present embodiment will be described. 7 to 9, the description will be made mainly on the plasma transport path, and the configuration other than the plasma transport path is illustrated in a simplified manner.
- FIG. 7 shows a schematic configuration of a plasma transport path in the plasma processing apparatus of the present embodiment.
- the start-side insulator IS is interposed between the plasma outlet of the cylindrical body of the anode 3 and the plasma transport tube, and the terminal-side insulation is interposed between the plasma transport tube and the plasma processing unit 15.
- the plasma generator 1, the plasma transport tube, and the plasma processing unit 15 are electrically independent from each other through the body IF, and the electrical influence from the plasma generation device 1 and the plasma processing unit 15 on the plasma transport tube is cut off. is doing.
- the plasma processing unit (chamber) C includes a plasma generation unit A and a plasma transport pipe B that generate plasma to be supplied.
- the plasma generator A corresponds to the plasma generator 4.
- a workpiece (plasma workpiece) W is installed in the plasma processing unit C, and a reactive gas is introduced from the gas inlet G1 as necessary by a gas introduction system connected to the chamber and reacted by a gas exhaust system.
- a gas or plasma flow is exhausted from the exhaust port G2.
- the plasma generator A has a cathode (target) that generates a plasma by performing a vacuum arc discharge in a vacuum atmosphere.
- the plasma transport path B is composed of a conduit through which plasma is circulated, and the plasma transport path B also has a structure of a droplet removing unit that removes droplets by-produced from the cathode by a geometric structure.
- the plasma transport path B is also a plasma flow pipe, and is a plasma straight pipe P0 connected to the plasma generator A, a first plasma advance pipe P1 connected to the plasma straight pipe P0 in a bent shape, and a first plasma.
- a second plasma advancing tube P2 connected to the end of the advancing tube P1 so as to be inclined at a predetermined bending angle with respect to the tube axis, and a bent end connected to the end of the second plasma advancing tube P2, from the plasma outlet It comprises a third plasma advancing tube P3 that discharges plasma.
- the second plasma advancing tube P2 corresponds to the second advancing path composed of the diameter expansion tube 13 in FIG.
- the outlet S3 of the third plasma advancing tube P3 extends so as to be immersed in the outer wall surface of the plasma processing unit C. As shown in FIG. 11 described later, the outlet S3 is connected to the outer wall surface.
- the connection type can be freely adjusted, for example, it may be directly connected via a flange (not shown).
- the plasma rectilinear pipe P0 adheres and removes droplets traveling straight from the plasma generating section A by colliding with the terminal section E facing the plasma generating section A or the inner wall of the pipe.
- L0 be the plasma travel length from the target position C2 of the plasma generator A to the outlet of the plasma straight tube P0, that is, the connecting point between the plasma straight tube P0 and the first plasma travel tube P1.
- the first plasma advancing tube P1 is connected in an orthogonal direction at the end side wall of the plasma straight advancing tube P0.
- L1 be the plasma travel length of the first plasma travel tube P1.
- the second plasma advancing tube P2 is inclined between the first plasma advancing tube P1 and the third plasma advancing tube P3, and the plasma advancing length is L2.
- the third plasma advancing tube P3 is arranged in a direction parallel to the first plasma advancing tube P1, and its plasma advancing length is L3.
- the plasma outlet of the third plasma advancing tube P3 extends to the inside of the plasma processing unit C.
- the plasma effective distance at which the plasma discharged from the plasma outlet of the third plasma advancing tube P3 reaches the installation position C1 of the object to be processed in the plasma processing unit C is L4.
- a plasma traveling path bent in three stages is formed by the plasma straight traveling tube P0, the first plasma traveling tube P1, the second plasma traveling tube P2, and the third plasma traveling tube P3.
- a magnetic field coil (not shown) for generating a plasma transfer magnetic field for transferring the plasma flow along the pipe is wound around the outer periphery of each plasma advancing tube.
- Plasma transport magnetic field generating means comprising a magnetic field coil generates a plasma transport magnetic field over the entire three-stage bending path, thereby improving plasma transport efficiency.
- a droplet removing baffle (not shown) is provided on the inner wall of the tube.
- the plasma traveling lengths L0 of the first plasma traveling tube P1, the second plasma traveling tube P2, and the third plasma traveling tube P3 between the target surface and the exit surface of the plasma straight traveling tube P0 is set so as to satisfy 900 mm ⁇ L ⁇ 1350 mm.
- FIG. 20 is a relationship diagram showing the relationship of the plasma transport distance to the film formation rate. In the present embodiment, L is set to 1190 mm as indicated by A3 in FIG. Under the setting of the plasma transport distance, when a single substrate was irradiated with plasma and a film having a thickness of 3 nm was formed, a film formation rate of about 1.5 nm / sec was obtained.
- the plasma transport distance by the plasma traveling path is shorter than the conventional T-shaped plasma traveling path (A1 in FIG. 20) and the curved plasma traveling path (A2 in FIG. 20), and the film formation rate is reduced.
- the surface treatment accuracy such as film formation by removing droplets with high efficiency by using the three-stage bending path.
- a purity plasma can be generated. That is, the plasma transport distance is shortened compared to the case of using a plasma traveling path bent in a T shape (A1) and the case of using a curved plasma traveling path (A2), and it is used for a semiconductor substrate or the like.
- a high film forming rate (about 1.5 nm / sec) can be obtained.
- the plasma traveling path is constituted by the above-described three-stage bent paths, and the pipe arrangement shown in FIG. Due to this droplet removal effect, when plasma is irradiated for 4 seconds on a substrate (work W) having a width d1 of 2.5 in (inch), a length D2 of 2.5 in (inch), and an arbitrary thickness t
- the amount of droplets deposited was 10 to less than 100.
- the second plasma advancing tube P2 is geometrically arranged at a position where the plasma outlet S1 side of the first plasma advancing tube P1 is not seen in a straight line from the plasma outlet S3 of the third plasma advancing tube P3. That is, the elevation angle from the upper end of the cross section on the plasma inlet S2 side of the third plasma advancing pipe P3 to the lower end of the cross section on the plasma outlet S1 side of the first plasma advancing pipe P1 is ⁇ , and the plasma outlet S3 side of the third plasma advancing pipe P3 When the elevation angle from the lower end of the tube cross section to the upper end of the tube cross section on the plasma outlet S2 side of the second plasma progression tube P2 is ⁇ 0 , ⁇ ⁇ ⁇ 0 is satisfied.
- the straight droplets derived from the first plasma advancing tube P1 are prevented from directly entering the third plasma advancing tube P3, and the plasma in the third plasma advancing tube P3 is avoided. It can be prevented from being discharged from the outlet S3. Therefore, it becomes possible to cause the droplet to collide with the inner wall of the path in the three-stage bending path process to remove the adhesion, and the adhesion amount of the droplet to the object to be processed can be greatly reduced as described above. Plasma processing with high-purity plasma from which droplets have been removed with high efficiency can be performed.
- the three-stage bending path is configured to be connected on the same plane, but the same geometrical arrangement as described above can be applied to a pipe structure that is spatially bent in three stages.
- the straight plasma is not directly discharged from the plasma outlet of the third plasma traveling tube.
- the second plasma advancing tube P2 may be an expanded tube P4 having a larger inner diameter than the first plasma advancing tube P1 and the third plasma advancing tube P3, as indicated by broken lines. That is, the second plasma advancing tube P2 is an enlarged tube P4, the first plasma advancing tube P1 is an introduction side reduced diameter tube connected to the plasma introduction side starting end of the enlarged tube P4, and the third plasma advancing tube P3 is enlarged. A discharge-side reduced diameter pipe connected to the plasma discharge-side end of the diameter pipe P4 is used. If the expansion pipe P4 is arranged in the middle, the plasma flow introduced into the expansion pipe from the introduction-side reduced diameter pipe is diffused by the expansion action of the plasma traveling path by the expansion pipe P4.
- the droplets mixed in the plasma are also diffused into the enlarged diameter pipe P4, and collide with the inner wall of the enlarged diameter pipe P4 to be attached and recovered. Further, when the plasma flow in the expanded pipe P4 is discharged, the droplets scattered on the inner wall surface side of the expanded pipe collide with the stepped portion due to the reduced diameter action from the expanded pipe P4 to the discharge-side reduced diameter pipe. It adheres and collects and does not merge with the plasma flow, preventing re-mixing of the droplets.
- the droplets can be sufficiently collected by adhering to the inner wall of the diameter expansion tube P4, and the droplets are efficiently used in the pipelines of the first plasma progression tube P1, the second plasma progression tube P2, and the third plasma progression tube P3. Can be removed. Also, if the diameter expansion tube P4 and the introduction-side diameter-reduction tube and / or the discharge-side diameter-reduction tube are not aligned with the center axis, the droplets can be easily separated from the plasma flow, and the droplets are collected. The effect is further enhanced.
- the droplet removing section can be configured simply and inexpensively by simply forming the diameter expansion tube P4 in the plasma traveling path.
- the above-described three-stage bent structure and the angular relationship ⁇ ⁇ ⁇ 0 give the geometric structure of the plasma transport path B provided mainly for removing the straight traveling droplets such as neutral droplets. Since charged droplets are affected by the electrical and magnetic effects from the environment, they may deviate from straight travel in the electromagnetic field due to the electric and magnetic fields. Therefore, in order to remove the charged droplets, it is necessary to equip a mechanism for consciously removing a potential difference from the plasma transport path. This is because it is difficult for a plasma apparatus to remove the magnetic field because a magnetic field for plasma transport is necessarily required. When the potential difference is removed, the electric force on the charged droplets can be erased. In this case, the charged droplets also have the property of moving straight like the neutral droplets, and the charged droplets are also removed by the above-mentioned geometric structure. It becomes possible to do.
- the plasma processing apparatus has a structure for removing charged droplets.
- the plasma generating part A and the plasma transport pipe B are electrically insulated from each other by the start-side insulator IS, and the plasma transport pipe B and the plasma processing part C are electrically insulated from each other by the terminal-side insulator IF.
- the plasma transport tube B is not affected at all by the plasma generation unit A and the plasma processing unit C, and the plasma transport tube B is set to the same potential as a whole.
- the plasma transport tube B is composed of the straight plasma traveling tube P0, the first plasma traveling tube P1, the second plasma traveling tube P2, and the third plasma traveling tube P3, and all of these pipings have the same potential.
- the charged droplet does not receive any electric force based on the potential difference in the plasma transport tube B. Accordingly, the charged droplets are also reliably removed in the plasma transport tube B by the above-described three-stage bent structure and the angle relationship ⁇ ⁇ ⁇ 0 , similarly to the neutral droplets.
- ⁇ A bias power supply can be attached to each component of the plasma processing apparatus.
- the container bias power source EA1 is attached to the plasma generating unit container A1
- the transport pipe bias power source EB is attached to the plasma transport tube B
- the processing unit container C3 which is the casing of the plasma processing unit C is treated.
- a bias power supply EW for the part to be processed is attached to the part bias power supply EC and the work W.
- the bias power supplies EA1, EB, EC, and EW have the same structure, and the structure will be described with reference to FIG.
- FIG. 10 is a configuration diagram of the bias power supply.
- the connection terminal CT is a terminal connected to each component of the plasma processing apparatus.
- the movable terminal VT connected to the connection terminal CT is movable in four stages.
- the four-stage receiving side terminal includes a floating terminal FT, a variable positive potential terminal PVT, a variable negative potential terminal NVT, and a ground terminal GNDT.
- the floating terminal FT is in an electrically floating state and is not connected to any part.
- the movable terminal VT When the movable terminal VT is connected to the variable positive potential terminal PVT, a positive potential with respect to the GND (ground side) is applied so that the component can be varied in size (0 to +50 V).
- a negative potential is applied to the component so as to be variable (0 to ⁇ 50 V) with respect to the GND (ground side).
- the movable terminal VT When the movable terminal VT is connected to the ground terminal GNDT, the component is grounded to GND.
- FIG. 7 shows a preferred potential arrangement, in which the plasma generator vessel A1 is installed in GND by the vessel bias power source EA1, and the plasma transport tube B is set in an electrically floating state by the transport tube bias power source EB.
- the part container C3 is set in the GND by the processing unit bias power supply EC, and the workpiece W is set in an electrically floating state by the processing target bias power supply EW. Since the plasma generating unit container A1 is insulated from the arc power source for generating plasma, the plasma generating unit container A1 grounded to GND is designed to be safe even if an operator contacts it. Since the processing unit container C3 is also grounded to the GND, it is safe even if an operator contacts it.
- the plasma transport tube B is in an electrically floating state and has the same potential as a whole, there is no potential difference in the plasma transport tube B as described above, and the charged droplet is neutral due to the geometric structure of droplet removal. As with droplets, it can be removed reliably.
- the workpiece W set in the electrically floating state is also at the same potential as a whole, and the electric action on the plasma is not biased, and the plasma can be uniformly received on the entire surface.
- FIG. 8 is a schematic configuration diagram of a plasma processing apparatus according to another embodiment of the present invention.
- the first difference from the embodiment of FIG. 7 is that a target exchange unit container A2 is provided on the lower side of the plasma generation unit container A1 via an inter-container insulator IA, and the target exchange unit container A2 has a bias for the exchange unit container.
- the power supply EA2 is attached.
- a spare target (not shown) for replenishing when the target of the plasma generation unit A is consumed is built in, and at the same time, an exchange mechanism (not shown) is built in. ing.
- the second difference is that the first intermediate insulator II1 divides the plasma transport tube B into a T transport tube B01 and a bent transport tube B23, and a bent transport tube bias power source EB23 is attached to the bent transport tube B23, so that the T transport is performed.
- the tube B01 is provided with a T transport tube bias power supply EB01. The rest is exactly the same as in FIG. 7, and in particular, the operational effects of the differences will be described below.
- the bias power supply EA2 for the replacement container is grounded to GND and is designed safely even if an operator touches it.
- the container bias power supply EA1 of the plasma generator A is set in an electrically floating state, erases the electrical action on the plasma, and promotes stable plasma generation.
- the bias power source for the T transport pipe is connected to the variable negative potential terminal NVT in FIG. 10, and the T transport pipe B01 is dropped to a negative potential. Experiments have shown that when this negative potential is adjusted in the range of ⁇ 5 to ⁇ 10 V, the removal efficiency of charged droplets increases.
- the bent transport pipe bias power supply EB23 is connected to GND.
- FIG. 9 is a schematic configuration diagram of a plasma processing apparatus according to still another third embodiment.
- the difference from FIG. 8 is that the bent transport pipe B23 is divided into a second transport pipe B2 and a third transport pipe B3 by the second intermediate insulator II2.
- the second transport pipe bias power supply EB2 is attached to the second transport pipe B2
- the third transport pipe bias power supply EB3 is attached to the third transport pipe B3.
- the rest is exactly the same as in FIG. 8, and in the following, the operational effects of the differences will be described.
- the second transport pipe bias power supply EB2 is grounded to GND, and the third transport pipe bias power supply EB3 is connected to the variable negative potential terminal NVT of FIG. 10 and set to a negative potential. It has been experimentally obtained that the negative potential of the third transport pipe bias power source EB3 is good when adjusted in the range of 0 to -15V.
- the bias power supply arrangement becomes EA2-> EA1-> EB01-> EB2-> EB3, the potential of the pipe changes from GND-> floating-> (-5 to -10 V)-> GND-> negative potential.
- this potential change is effective for removing charged droplets.
- variable positive potential of each bias power supply EW, EC, EB3, EB2, EA1, EA2, EB01 can be adjusted in the range of 0 to + 50V, and the variable negative potential is adjusted in the range of 0 to -50V.
- the potential of each bias power supply is individually variably adjusted so that the drop removal efficiency of the entire apparatus is maximized in these voltage ranges.
- FIG. 11 is a schematic configuration diagram of a plasma processing apparatus according to the fourth embodiment of the present invention.
- the apparatus of FIG. 11 shows a plasma processing apparatus in which a magnetic field coil for generating a magnetic field for plasma transfer is installed on the outer periphery of the apparatus and a baffle for removing droplets is arranged on the inner wall of the apparatus.
- a connection type in which the outlet of the third plasma advancing tube is directly connected to the outer wall surface of the plasma processing unit 1 is employed.
- FIG. 11 is a schematic configuration diagram of a plasma processing apparatus according to the fourth embodiment of the present invention.
- the apparatus of FIG. 11 shows a plasma processing apparatus in which a magnetic field coil for generating a magnetic field for plasma transfer is installed on the outer periphery of the apparatus and a baffle for removing droplets is arranged on the inner wall of the apparatus.
- a connection type in which the outlet of the third plasma advancing tube is directly connected to the outer wall surface of the plasma processing unit 1 is employed.
- the inter-container insulator IA, the start-end-side insulator IS, the first intermediate insulator II1 and the end-side insulator IF are arranged to constitute electrical insulation of the entire apparatus.
- symbol is shown by the alphabet symbol, but in FIG. 11, the member code
- 8 and FIG. 11 indicate the same members, and the configuration and operation and effects thereof have already been described with reference to FIG. The removal geometry is mainly described.
- the plasma processing apparatus shown in FIG. 11 includes a plasma processing unit (chamber) 101 having a gas inlet 125a and an exhaust port 125b, a plasma generating unit 102 for generating plasma to be supplied to the plasma processing unit 101, and a plasma transport tube. And a processing device.
- the plasma transport pipe is composed of a plasma circulation pipe in which a droplet removing unit for removing droplets is arranged.
- the droplet removing unit means the plasma transport tube B having the droplet removing structure.
- the droplet removing unit of the fourth embodiment includes a plasma straight tube 103 connected to the plasma generator 102, a first plasma advancing tube 104 connected to the plasma straight tube 3 in a bent shape, and a first plasma advancing tube.
- the second plasma advancing tube 105 connected to the end of the tube 4 at a predetermined bending angle with respect to the tube axis, and connected to the end of the second plasma advancing tube 105 in a bent shape.
- a third plasma advancing tube 106 for discharging the gas.
- a plasma transport tube including the straight plasma traveling tube 103, the first plasma traveling tube 104, the second plasma traveling tube 105, and the third plasma traveling tube 106 is bent in three stages like the plasma transport tube of FIG. .
- the plasma outlet 107 of the third plasma advancing tube 106 is connected to the plasma inlet of the plasma processing unit 101.
- the second plasma advancing tube 105 is geometrically arranged in the same manner as in FIG. 8 at a position where the plasma outlet 107 of the third plasma advancing tube 106 is not seen through the plasma outlet side of the first plasma advancing tube 104 linearly. ing.
- the elevation angle ( ⁇ ) from the upper end of the cross section on the plasma inlet side of the third plasma advancing tube 106 to the lower end of the cross section on the plasma outlet side of the first plasma advancing tube 104 is As shown in FIG. 2, when the elevation angle ( ⁇ 0 ) from the lower end of the cross section on the plasma outlet 107 side of the third plasma advancing tube 106 to the upper end of the cross section on the plasma outlet side of the second plasma advancing tube 105 is ⁇ ⁇ ⁇ 0 Satisfied.
- the geometrical pipeline arrangement similar to that in FIG. 8 prevents the straight droplets derived from the first plasma advancing tube 104 from directly entering the third plasma advancing tube 106, and the third plasma advancing tube It is possible to prevent discharge from the plasma outlet 107 of 106.
- the plasma generation unit 102 includes a cathode (cathode) 110, a trigger electrode 111, an inner wall multi-segment anode (anode) 112, an arc power source 113, a cathode protector 114, and a plasma stabilizing magnetic field generator (electromagnetic coil or magnet) 115.
- the cathode 110 is a supply source of a plasma constituent material, and the forming material is not particularly limited as long as it is a conductive solid, and a single metal, an alloy, an inorganic simple substance, an inorganic compound (metal oxide / nitride) or the like is used alone. Or 2 or more types can be mixed and used.
- the cathode protector 114 electrically insulates the portion other than the evaporating cathode surface, and prevents plasma generated between the cathode 110 and the anode 112 from diffusing backward.
- the material for forming the anode 112 is not particularly limited as long as it does not evaporate even at the plasma temperature and is a non-magnetic material having conductivity.
- the shape of the anode 112 is not particularly limited as long as it does not block the entire progress of the arc plasma.
- the plasma stabilizing magnetic field generator 115 is disposed on the outer periphery of the plasma generating unit 102 and stabilizes the plasma.
- the plasma is further stabilized.
- the arc stabilizing magnetic field generator 115 is arranged so that the magnetic fields applied to the plasma are in opposite directions (cusp shape).
- the deposition rate by the plasma can be further improved.
- the plasma generation unit 102 and each plasma pipe are electrically insulated by the plasma generation unit side insulating plate 116, and even when a high voltage is applied to the plasma generation unit 102, the front part is electrically connected from the plasma straight tube 103. In the floating state, the plasma is not electrically influenced in the plasma traveling path.
- a processing unit side insulating plate (termination side insulator IF) is also interposed between the third plasma traveling tube 106 and the plasma processing unit 1, and plasma from the plasma straight traveling tube 103 to the third plasma traveling tube 106 is interposed.
- the entire transfer duct is set in an electrically floating state so that the transferred plasma is not affected by an external power source (high voltage or GND).
- an electric spark is generated between the cathode 110 and the trigger electrode 111, and a vacuum arc is generated between the cathode 110 and the anode 112 to generate plasma.
- the constituent particles of the plasma include evaporating substances from the cathode 110, charged particles (ions, electrons) originating from the evaporating substances and the reactive gas, as well as molecules in the pre-plasma state and neutral particles of atoms.
- droplets of sub-micron to several hundred microns (0.01-1000 ⁇ m) size are emitted. This droplet forms a mixed state with the plasma flow 126 and moves in the plasma traveling path as a droplet mixed plasma.
- a plasma transport tube including the straight plasma traveling tube 103, the first plasma traveling tube 104, the second plasma traveling tube 105, and the third plasma traveling tube 106 includes magnetic field coils 117, 118, 119, and 120 wound around the outer periphery of each tube.
- a plasma transfer magnetic field generating means is provided. Plasma transport efficiency can be improved by generating a plasma transfer magnetic field in the entire three-stage bending path.
- a magnetic field coil 121 for generating a bending magnetic field and a deflecting magnetic field generating means 123 are attached to the connecting portion of the first plasma advancing tube 104 and the second plasma advancing tube 105.
- the bending of the plasma flow is induced by a bending magnetic field. Since the bending magnetic field coil cannot be wound uniformly at the connecting portion of the first plasma traveling tube 104 and the second plasma traveling tube 105, a magnetic field non-uniformity in which the bending magnetic field becomes stronger is generated inside the bending portion.
- deflection magnetic field generation means 122 and 124 are attached to the first plasma traveling tube 104 and the second plasma traveling tube 105.
- the deflection magnetic field generating means 122 and 124 include a deflection magnetic field generation coil 130 and a movable yoke 129.
- FIG. 12 shows a state where the movable yoke 129 is disposed on the outer periphery of the second plasma advancing tube 105.
- the movable yoke 129 is wound with a deflection magnetic field generating coil 130 and has a pair of magnetic poles 127 and 128.
- a deflection magnetic field is generated between the magnetic poles 127 and 128 and applied to the plasma in the second plasma advancing tube 105.
- the deflection magnetic field generating means 122 and 124 include an adjustment mechanism that adjusts the movable yoke 129 by slide adjustment in the tube axis direction, rotation adjustment in the circumferential direction, and swing adjustment in the tube axis direction.
- FIG. 13 shows a rotation adjusting mechanism for the movable yoke 129 disposed on the outer periphery of the first plasma advancing tube 104.
- the rotation adjustment mechanism includes a guide body 131 provided with four arcuate guide grooves 132 for adjusting the rotation of the movable yoke 129 in the circumferential direction.
- a pin 133 provided on the movable yoke 129 is inserted into the guide groove 132, and the movable yoke 129 can be rotated and adjusted within an angle adjustment range ⁇ 1 of 90 degrees or less by sliding the pin 133 in the tube circumferential direction. . After the adjustment, the adjustment angle can be maintained by fastening the pin 133 to the guide body 131 with the fastening nut 134.
- FIG. 14 shows an adjustment mechanism for adjusting the sliding movement of the movable yoke 129 arranged on the outer periphery of the second plasma traveling tube 105 in the tube axis direction and swinging in the tube axis direction.
- the guide body 131 is supported by the slide member 135 in a state where the movable yoke 129 is fixedly held via the spacer 136.
- the slide member 135 has a linear slide groove 138 along the tube axis direction of the second plasma advancing tube 105, and is fixed to the adjustment unit main body 137.
- the slide groove 138 is formed in parallel to the inclined center line of the second plasma advancing tube 105.
- the slide groove installed in the first plasma advancing tube 104 is formed horizontally along the center line of the first plasma advancing tube 104.
- a pin 139 provided on the guide body 131 is inserted into the guide groove 138.
- the movable yoke 129 of the guide body 131 is slid and adjusted substantially over the tube length of the second plasma advancing tube. Can do.
- the adjustment position can be maintained by fastening the pin 139 to the slide member 135 with the fastening nut 40.
- the guide body 131 is supported by the slide member 135 so as to be rotatable around the axis of the pin 139 while the movable yoke 129 is fixedly held.
- the movable yoke 129 By rotating about the axis of the pin 139, the movable yoke 129 can be adjusted to swing (tilt angle adjustment) in the tube axis direction. After the adjustment, the adjustment tilt angle can be maintained by fastening the pin 139 to the slide member 135 with the fastening nut 140.
- the adjustable tilt angle is 5 ° on the first plasma traveling tube 104 side and 30 ° on the opposite side.
- the deflection magnetic field generating means 122 and 124 can adjust the position or angle of the movable yoke 129 because the movable yoke 129 can be adjusted to slide in the tube axis direction, rotate in the circumferential direction, and swing in the tube axis direction. Makes it possible to make fine adjustment by the deflection magnetic field to eliminate the nonuniformity of the magnetic field for plasma transfer, and to realize an optimal plasma traveling path consisting of the geometrical arrangement of the three stages of bending paths. .
- FIG. 15A schematically shows a state 119A in which the magnetic field coil for generating a magnetic field for plasma transfer is wound around the second plasma advancing tube 105 arranged in an inclined manner in a circular shape M1 along the inclination axis.
- a gap where the coil is not wound is formed in the vicinity of the connection portion with the other pipe (104 or 106), a non-uniform magnetic field is generated, and the plasma transport efficiency is lowered. End up.
- the magnetic field coil 119 wound around the outer periphery of the second plasma advancing tube 105 is composed of a magnetic field coil that is wound elliptically along the tilt axis with respect to the outer periphery of the tube.
- 15B) of FIG. 15 schematically shows a state 119B in which the magnetic field coil 119 for generating a magnetic field for plasma transfer is wound around the second plasma advancing tube 105 arranged in an inclined manner in an elliptical shape M2 along the inclination axis.
- Plasma transport pipes composed of the plasma straight-advancing tube 103, the first plasma advancing tube 104, the second plasma advancing tube 105, and the third plasma advancing tube 106 have droplet collecting plates (baffles) 141, 142, 143 and 144 are planted. The structure of each collecting plate will be described in detail below.
- FIG. 16 is a partial enlarged cross-sectional view of the inner peripheral pipe 161 having the droplet collecting plate 160.
- the inner peripheral pipe 161 is accommodated in each plasma pipe (103 to 106), and a plurality of droplet collecting plates 160 are planted on the inner wall thereof.
- a plasma circulation opening 162 is formed in the center of the droplet collecting plate 160.
- the plasma flows in from the upper side of the figure and passes through the opening 162.
- the inclination angle ⁇ of the droplet collecting plate 160 is set in the range of 15 to 90 °, it is experientially 30 to 60 °, and in this embodiment ⁇ is set to 60 °. At this inclination angle, the droplets separated from the plasma flow can be reliably attached and recovered while being subjected to multiple reflection on the droplet collecting plate 160.
- the droplet adhesion surface area in the inner peripheral pipe 161 is increased by the plurality of droplet collecting plates 160, and the scattered droplets can be adhered and collected in a large amount with certainty.
- the number of droplet collection plates 160 is limited by the restriction of the tube length of the inner peripheral tube 161. Therefore, in order to increase the droplet removal area, the surface of the droplet collection plate 160 may be increased. It is preferable to perform roughening to form a rough surface having innumerable irregularities. That is, by roughening the surface of the droplet collection plate 160, the collection area of the droplet collection plate 160 is increased, and the collection efficiency can be improved.
- the droplet which collided with the recessed part is firmly fixed by the recessed part, and the droplet collecting efficiency is remarkably increased.
- line processing or satin processing can be used.
- line processing method for example, a polishing process using polishing paper is used.
- satin processing method for example, blasting using alumina, shots, grids, glass beads, or the like is used, and in particular, microblast processing in which several micron particles are accelerated by compressed air or the like and nozzle sprayed is used. Fine irregularities can be applied to the narrow surface.
- the planting area of the droplet collecting plate 160 is preferably 70% or more of the pipe inner wall area. In the case of FIG. 8, the planting area is about 90% of the inner wall area of the tube, and the surface area of droplet attachment in the plasma traveling tube is increased, so that a large amount of scattered droplets can be attached and recovered reliably. Therefore, it is possible to achieve high purity of the plasma flow.
- the droplet collecting plate 160 is electrically cut off from the wall of each plasma traveling tube.
- the inner peripheral tube 161 is connected to an inner peripheral tube bias power source 163 as a bias voltage applying means, and the inner peripheral tube 161 can be set to a positive potential, set to a negative potential, or grounded to GND. .
- the bias potential of the inner peripheral tube 161 is a positive potential, there is an effect of pushing out positive ions in the plasma in the transport direction, and in the case of a negative potential, there is an effect of pushing out electrons in the plasma in the transport direction.
- Which of + and-is selected is selected in a direction that does not decrease the plasma transfer efficiency, and is determined by the state of the plasma.
- the potential intensity is also variable, and it is usually selected from the viewpoint of conveyance efficiency to set the inner peripheral tube 161 to + 15V.
- the bias potential can be adjusted to suppress the plasma attenuation, and the plasma transfer efficiency can be increased.
- the aperture 170 has a structure in which the installation position can be changed along the tube axis direction in the second plasma advancing tube 105, and may have a structure that can move back and forth or a structure that can move only in one direction. . Since it is movable, the installation position of the aperture can be adjusted, and it can be taken out and washed.
- the aperture 170 has an opening of a predetermined area in the center, and the droplet is collided and captured by the wall surface around the opening, and the plasma passing through the opening advances.
- the opening may be provided in the center or may be designed in various ways, such as being provided at an eccentric position. Therefore, if a plurality of apertures 170 are movably installed in the second plasma advancing tube 105, the droplet removal efficiency can be increased and the plasma purity can be improved.
- a one-way moving aperture using a leaf spring is shown.
- FIG. 17 is a plan view of the movable aperture 170, and (17B) of FIG.
- the aperture 170 has a ring shape having an opening 171 having a predetermined area in the center.
- the shape of the opening can be variously designed such as a circle or an ellipse according to the arrangement form.
- Stoppers 172 made of elastic pieces (for example, leaf springs) protruding outward are fixed to the three positions of the aperture 170 surface by screws 173, but a fixing method such as welding can be arbitrarily adopted.
- the protruding portion 174 of the elastic piece is bent downward. As shown in (17B) of FIG.
- a locking recess 176 for holding the aperture 170 is previously formed in a circular shape on the inner wall of the tube 175 of the second plasma advancing tube 105.
- a plurality of locking recesses 176 are provided along the longitudinal direction of the tube 175.
- the protruding portion 174 of the stopper 172 spreads by the elastic urging force in the locking recess 176, and is fitted into the locking recess 176 and locked. In this locked state, the stopper 172 cannot be reversed, and the aperture 170 can be set at the locked position.
- the set position is changed, if the aperture 170 is further pushed in the direction of the arrow 177, the stopper 172 is unlocked, and the protruding portion 174 can be reinserted and locked in the next locking recess 176.
- the aperture 170 has a structure that can be moved to an arbitrary set position in the second plasma advancing tube 105, the aperture 170 reduces the diameter of the second plasma advancing tube 105 to collect droplets, and further sets the set position.
- the amount of collection can be adjusted optimally by changing as appropriate, which contributes to improved droplet removal efficiency.
- the number of sets of apertures 170 is 1 or 2 or more.
- the opening 171 can be provided not only in the center of the aperture 170 but also to have a function of causing the plasma flow in the tube to meander by being eccentric.
- a ring-shaped aperture may be provided at a connecting portion in the plasma traveling path composed of the plasma straight traveling tube 103, the first plasma traveling tube 104, the second plasma traveling tube 105, and the third plasma traveling tube 106. Similar to the aperture 170, the arrangement of the apertures for the connecting portion reduces the diameter of the plasma traveling path or decenters it, or reduces or decenters it to collect more droplets contained in the plasma flow. Removal efficiency can be improved.
- the final stage third plasma advancing tube 106 is configured with a uniform tube diameter, but the plasma flow discharged from the second plasma advancing tube 105 via a bent path. It is preferable to further increase the density in the third plasma advancing tube 106.
- An embodiment in which the third plasma advancing tube 106 is further provided with a densification function will be described below.
- FIG. 18 shows a schematic configuration of a plasma processing apparatus according to the fifth embodiment.
- the plasma processing apparatus of FIG. 18 includes a plasma generation unit (not shown) that generates plasma to be supplied to the plasma processing unit 101 and a plasma generation apparatus including a plasma transport tube.
- the droplet removing unit provided in the plasma transport tube includes a plasma straight tube 1100 connected to the plasma generation unit, and a first plasma connected to the plasma straight tube 1100 in a bent shape through a connection port 1104.
- the plasma transport tube is provided with a droplet collecting plate and a magnetic field coil for forming a plasma transfer magnetic field.
- the plasma transport tube including the straight plasma traveling tube 1100, the first plasma traveling tube 1101, the second plasma traveling tube 1102, and the third plasma traveling tube 1103 is bent and formed in three stages, similar to the plasma traveling path of FIGS. Has been.
- the third plasma advancing tube 1103 includes a rectifying tube 1107 connected to the end of the second plasma advancing tube 1102, a frustoconical tube 1108 serving as a deflection vibration tube connected to the rectifying tube 1107, and an outlet tube 1109.
- the frustoconical tube (deflection vibration tube) 1108 is expanded in diameter toward the outlet tube 1109 side.
- a plasma outlet 1110 of the outlet pipe 1109 is connected to a plasma inlet of the plasma processing unit 1.
- the outlet pipe 1109 has a uniform pipe diameter.
- the plasma travel lengths L1 to L3 of the first plasma travel tube 1101, the second plasma travel tube 1102, and the third plasma travel tube 1103 are the same as the plasma travel tubes in FIG. It is set similarly.
- the second plasma advancing tube 1102 is geometrically arranged in the same manner as in FIGS. 7 and 11 at a position where the plasma outlet 1110 of the outlet tube 1109 does not see through the plasma outlet 1105 side of the first plasma advancing tube 1101 linearly. Has been.
- the elevation angle ( ⁇ ) from the upper end of the cross section on the plasma inlet side of the rectifying tube 1107 to the lower end of the cross section on the plasma outlet 1105 side of the first plasma advancing tube 1101 is
- ⁇ ⁇ ⁇ 0 is satisfied as in FIG. Has been. 7 and FIG. 11, it is possible to prevent the straight droplet derived from the first plasma advancing tube 1101 from directly entering the third plasma advancing tube 1103, It is possible to prevent discharge from the plasma outlet 1110 of the plasma advancing tube 1103.
- the plasma flow meanders and diffuses at the end of the inclined second plasma traveling tube 1102 connected to the third plasma traveling tube 1103, and the plasma traveling efficiency toward the third plasma traveling tube 1103 decreases.
- a rectifying magnetic field coil 1114 is provided in the rectifying tube 1107 connected to the second plasma advancing tube, and the flow of plasma supplied from the second plasma advancing tube 1102 to the rectifying tube 1107 is forcibly focused.
- a rectifying magnetic field to be rectified is generated in the tube. With this rectifying magnetic field, the plasma flowing in the second plasma advancing tube 1102 can be drawn out in a focused manner toward the third plasma advancing tube 1103, and high-density and high-purity plasma can be generated.
- FIG. 19 is an explanatory diagram of a magnetic field for scanning formed in a truncated cone tube (deflection vibration tube) 1108 (shown in FIG. 18) according to the fifth embodiment.
- a cone connected to a rectifying tube 1107 is used to oscillate a plasma flow focused and rectified by a rectifying magnetic field action left and right and up and down to scan the plasma flow like a CRT display.
- a trapezoidal tube (deflection vibration tube) 1108 is provided with a scanning magnetic field coil 1113.
- the scanning magnetic field coil 1113 includes a set of X-direction oscillating magnetic field generators 108a and 108a and a set of Y-directional oscillating magnetic field generators 108b and 108b.
- the scanning magnetic field B R (t) is a combined magnetic field of the X-direction oscillating magnetic field B X (t) and the Y-direction oscillating magnetic field B Y (t).
- the plasma flow is scanned up and down by the Y-direction oscillating magnetic field while the plasma flow is swung left and right by the X-direction oscillating magnetic field, and this is repeated to enable the plasma processing unit 1 to irradiate a large area plasma.
- the cross-sectional area of the plasma flow is smaller than the cross-sectional area of the workpiece disposed in the plasma processing chamber 1, the plasma flow is scanned up, down, left, and right to enable plasma irradiation on the entire surface of the workpiece.
- the same principle is used as when an electron beam of a CRT display moves up and down while vibrating left and right, and this operation is repeated to emit light on the entire display screen.
- an anode wall multi-divided plasma generator capable of improving the operation efficiency by preventing the flaking of large carbon flakes without reducing the plasma generation efficiency.
- the anode wall multi-partition type plasma generator is mounted to improve the operation efficiency and to take measures for removing neutral droplets and charged droplets. Since high purity of plasma can be realized, the surface characteristics of solids can be improved by forming a high-purity thin film with very few defects and impurities on the surface of the solid material in the plasma or by irradiating the plasma.
- It can be uniformly modified without adding impurities and impurities, for example, to form high-quality and high-precision, for example, a wear / corrosion resistance enhancement film on a solid surface, a protective film, an optical thin film, a transparent conductive film, etc. It is possible to provide a plasma processing apparatus that can perform the processing.
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Abstract
Description
図22は従来の電極筒体214の内壁面を示す。陽極203を管内面全体にすると、陰極201との間で真空アークが発生しにくくなるため、電極筒体214の内壁には陰極201との間で真空アークを円滑に発生しやすくするために、環状の溝215を複数刻設してリング状の突部216を多数設けている。
本発明における陽極の配置は陰極の前方に位置する場合あるいは陰極の一部又は全部を包囲する配置形態で実施することができる。また、陽極の筒体構造は内径一定の管状のものに限らず、円錐台形の内壁構造のものにも本発明を適用することができる。
前記第2プラズマ進行管は前記屈曲角(傾斜角)で傾斜しており、傾斜角が大きい場合はドロップレットは遮断できるが、プラズマ密度が低下するため被処理物表面への成膜速度は低下する。逆に、傾斜角が小さい場合にはドロップレットは処理室内に進入するが、プラズマ密度の低下が小さいため被処理物表面への成膜速度は低下しない。従って、成膜速度とドロップレットの許容度との関係で前記傾斜角を適宜選択することができる。
前記第3プラズマ進行管の出口はプラズマ処理部の外壁面に直接連結されても良いし、前記外壁面の内部まで没入させて配置しても良い。更には、前記第3プラズマ進行管の出口と前記外壁面の位置関係を保持しながら、第2プラズマ進行管と第3プラズマ進行管の間に整流管や偏向振動管を介在させることもできる。
前述したように、前記第3プラズマ進行管の出口はプラズマ処理部の外壁面に直接連結されても良いし、前記外壁面の内部まで没入させて配置しても良いことは云うまでもない。また、第2プラズマ進行管と第3プラズマ進行管の間に整流管や偏向振動管を介在させても良いことは云うまでもない。
2 陰極
3 陽極
4 プラズマ発生部
5 トリガ電極
6 プラズマ進行路
7 屈曲部
8 屈曲磁場発生器
9 ドップレット進行路
10 ドロップレット捕集部
11 バッフル
12 バッフル
13 拡径管
14 磁場発生器
15 プラズマ処理部
16 被処理物
17 バッフル
18 磁場発生器
19 バッフル
20 磁場発生器
21 ターゲットコイル
22 フィルタコイル
23 縮径管
24 回動軸
25 電源
26 通電線
27 通電線
28 陽極内壁
29 外壁
30 絶縁部材
31 絶縁部材
32 放電面
33 管路端
34 空隙
35 突部
36 貯留部
37 溝
38 溝
39 小片の突部
40 カーボンフレーク
41 拡散物質
42 環状凹所
43 突部
44 斜向溝
45 横溝
46 六角形状の突部
47 ハニカム溝
48 陽極
49 格子状の凹凸パターン
50 環状溝パターン
101 プラズマ処理部
102 プラズマ発生部
103 プラズマ直進管
104 第1プラズマ進行管
105 第2プラズマ進行管
106 第3プラズマ進行管
107 プラズマ出口
108 矢印
108a X方向振動磁場発生器
108b Y方向振動磁場発生器
109 矢印
110 陰極
111 トリガ電極
112 陽極
113 アーク電源
114 陰極プロテクタ
115 プラズマ安定化磁界発生器
116 絶縁プレート
117 磁場コイル
118 磁場コイル
119 磁場コイル
121 磁場コイル
122 偏向磁場発生手段
123 偏向磁場発生手段
124 偏向磁場発生手段
125a ガス流入口
125b 排気口
127 磁極
128 磁極
129 可動ヨーク
130 偏向磁場発生コイル
131 ガイド体
132 ガイド溝
133 ピン
134 締結ナット
135 スライド部材
136 スペーサ
137 調整部本体
138 スライド溝
139 ピン
140 締結ナット
141 ドロップレット捕集板(バッフル)
142 ドロップレット捕集板(バッフル)
143 ドロップレット捕集板(バッフル)
144 ドロップレット捕集板(バッフル)
160 ドロップレット捕集板(バッフルの一部)
161 内周管
162 開口部
163 バイアス電源
170 アパーチャー
171 開口部
172 ストッパ
173 ビス
174 突出部分
175 管
176 係止凹部
177 矢印
200 プラズマ発生部
201 陰極
202 トリガ電極
203 陽極
204 プラズマ
205 電源
206 プラズマ安定化磁場発生器
207 プラズマ安定化磁場発生器
208 プラズマ処理部
209 被処理物
210 ガス導入システム
211 ガス排気システム
212 ドロップレット捕集部
213 陰極材料微粒子
214 電極筒体
215 環状の溝
216 突部
217 上面
218 拡散物質
219 円弧部分
220 カーボンフレーク
1109 出口管
1100 プラズマ直進管
1101 第1プラズマ進行管
1102 第2プラズマ進行管
1103 第3プラズマ進行管
1104 連接口
1105 プラズマ出口
1106 プラズマ出口
1107 整流管
1108 円錐台形管
1110 プラズマ出口
1111 矢印
1112 矢印
1113 走査用磁場コイル
1114 整流磁場コイル
A プラズマ発生部
A1 プラズマ発生部容器
A2 ターゲット交換部
B プラズマ輸送管
B01 T輸送管
B2 第2輸送管
B23 屈曲輸送管
B3 第3輸送管
C プラズマ処理部
C1 設置位置
C2 ターゲット位置
C3 処理部容器
CT 接続端子
E バイアス電源
EA1 容器用バイアス電源
EA2 交換部容器用バイアス電源
EB 輸送管用バイアス電源
EB01 T輸送管用バイアス電源
EB2 第2輸送管用バイアス電源
EB23 屈曲輸送管用バイアス電源
EB3 第3輸送管用バイアス電源
EC 処理部用バイアス電源
EW 被処理物用バイアス電源
FT 浮動端子
GND 接地
GNDT 接地端子
IF 終端側絶縁体
II1 第1中間絶縁体
IS 始端側絶縁体
IA 容器間絶縁体
II2 第2中間絶縁体
NVT 可変負電位端子
P0 プラズマ直進管
P1 第1プラズマ進行管
P2 第2プラズマ進行管
P3 第3プラズマ進行管
P4 拡径管
PVT 可変正電位端子
S1 プラズマ出口
S2 プラズマ入口
S3 プラズマ出口
VT 可動端子
W ワーク
陽極3の電極筒体の内壁には縦横の溝37、38により凹凸がマトリクス状に刻設され、多数個の突部35が形成されている。突部35は湾曲した薄型直方体形状を有する。電極筒体の下方に設けた空隙34の下側にはカーボンフレークを回収するための筒径より大きい貯留部36が配置されている。
図6は陽極内壁の一部を多分割化した変形例を示す。この変形例においては、陽極48の電極筒体の内壁のうち、陰極2に近い半分領域を、上記と同様の格子状の凹凸パターン49の形成領域とし、残り半分の筒内壁には複数の環状溝を陰極2の前方方向に刻設した環状溝パターン50を形成している。従って、陰極2に近い半分領域において凹凸パターン49による堆積物の微細化を実現し、残りの筒内壁においては環状溝パターン50によって形成される陽極突部の表面積の大きい領域を確保し、真空アークの発生を高効率で誘起して、陰極・陽極間の短絡現象の発生を防止すると共にプラズマ発生効率の向上を図ることができる。
図20は成膜レートに対するプラズマ輸送距離の関係を示す関係図である。本実施形態では、図20のA3に示すように、Lを1190mmにしている。このプラズマ輸送距離の設定下において、1枚の基板に対してプラズマ照射を行い、3nmの厚みの成膜を実施したとき、約1.5nm/secの成膜レートが得られた。
図11は、本発明の第4実施形態に係るプラズマ処理装置の概略構成図である。図11の装置は、図8の装置にプラズマ搬送用磁場を発生させる磁場コイルを管外周に設置し、またドロップレット除去用バッフルを管内壁に配置したプラズマ処理装置を示している。この実施形態では、第3プラズマ進行管の出口をプラズマ処理部1の外壁面に直結した接続形式を採用している。図8と同様に、容器間絶縁体IA、始端側絶縁体IS、第1中間絶縁体II1及び終端側絶縁体IFが配置されて、全体装置の電気絶縁が構成されている。また、図8では部材符号がアルファベット記号で示しているのに対し、図11では部材符号が数字で示しているが、実質的相違は無い。また、同一のアルファベット符号は、図8と図11では同一部材を示し、その構成と作用効果は図8で既に説明しているから、図11では同一部分の説明を省略し、以下ではドロップレット除去の幾何学的構造を主として説明する。
また、第3プラズマ進行管106のプラズマ出口107から第1プラズマ進行管104のプラズマ出口側を直線状に透視させない位置に、第2プラズマ進行管105が図8と同様に幾何学的に配置されている。即ち、一点鎖線の矢印109で示すように、第3プラズマ進行管106のプラズマ入口側の管断面上端から第1プラズマ進行管104のプラズマ出口側の管断面下端に対する仰角(θ)は、矢印108で示すように、第3プラズマ進行管106のプラズマ出口107側の管断面下端から第2プラズマ進行管105のプラズマ出口側の管断面上端に対する仰角(θ0)としたとき、θ≧θ0が満足されている。図8と同様の幾何学的管路配置により、第1プラズマ進行管104から導出される直進ドロップレットが直接的に第3プラズマ進行管106に侵入するのを回避して、第3プラズマ進行管106のプラズマ出口107から排出されないようにすることができる。
図13は第1プラズマ進行管104外周に配置した可動ヨーク129の回動調整機構を示す。回動調整機構は可動ヨーク129を周方向に回動調整する円弧状ガイド溝132が4箇所設けられたガイド体131からなる。ガイド溝132には可動ヨーク129に設けたピン133が挿入され、ピン133を管円周方向にスライドさせることにより90度以下の角度調整範囲θ1内で可動ヨーク129を回動調整することができる。調整後はピン133を締結ナット134でガイド体131に締め付けることにより、その調整角度を保持することができる。
本実施形態においては、第2プラズマ進行管105の管外周に巻回された磁場コイル119は、その管外周に対して傾斜軸に沿って楕円状に巻回された磁場コイルからなる。図15の(15B)はプラズマ搬送用磁場発生用磁場コイル119を、傾斜配置された第2プラズマ進行管105に傾斜軸に沿って楕円形状M2に巻回した状態119Bを模式的に示す。楕円形状M2に巻回した磁場コイル119を第2プラズマ進行管105に設置することにより、(15A)の斜線領域のような空隙が生じないので、第2プラズマ進行管5の傾斜面に密に磁場コイルを巻回して、不均一磁場を発生させずにプラズマ輸送効率を向上させ、高密度かつ高純度プラズマを用いたプラズマ処理を可能にすることができる。
Claims (12)
- プラズマ構成物質の供給源を陰極とし、前記陰極の前方又は周囲に筒状の陽極を設け、真空雰囲気下で前記陰極と前記陽極間において真空アーク放電を行って前記陰極表面からプラズマを発生させるプラズマ発生装置において、前記陽極を形成する筒内壁に多数の凹凸を設け、前記陰極から前記陽極側に放出された前記プラズマの一部が前記凹凸に付着して堆積したとき、前記堆積物が微細片として前記陽極から剥落することを特徴とするプラズマ発生装置。
- 前記凹凸の突部の最長長さを前記筒内壁と前記陰極外周との間の隙間の幅より短くした請求項1に記載のプラズマ発生装置。
- 多数の前記凹凸を格子状、斜交状、島状のパターンのいずれかにより形成した請求項1又は2に記載のプラズマ発生装置。
- 前記陽極を形成する筒内壁のうち、前記陰極に近い領域を前記凹凸パターンの形成領域とし、残りの筒内壁に、複数の環状溝を前記陰極の前方方向に刻設した環状溝パターンを形成した請求項1、2又は3に記載のプラズマ発生装置。
- 前記陰極の周囲に環状凹所を形成し、前記陽極から剥落した前記微細片を前記凹所に貯留、回収する請求項1~4のいずれかに記載のプラズマ発生装置。
- 前記陰極の下方に前記微細片の貯留部を設けると共に、前記陰極の周囲に前記貯留部に連通する開放部を形成し、前記陽極から剥落した前記微細片を前記開放部を通じて前記貯留部に貯留、回収する請求項1~5のいずれかに記載のプラズマ発生装置。
- 前記請求項1~6のいずれかに記載のプラズマ発生装置と、前記プラズマ発生装置により発生されたプラズマを輸送するプラズマ輸送管と、前記プラズマ輸送管から供給されるプラズマにより被処理物を処理するプラズマ処理部を有することを特徴とするプラズマ処理装置。
- 前記陽極の筒体のプラズマ出口と前記プラズマ輸送管の間に始端側絶縁体を介装し、前記プラズマ輸送管と前記プラズマ処理部の間に終端側絶縁体を介装して、前記プラズマ発生装置、前記プラズマ輸送管及び前記プラズマ処理部を相互に電気的に独立させ、前記プラズマ輸送管に対する前記プラズマ発生装置及び前記プラズマ処理部からの電気的影響を遮断した請求項7に記載のプラズマ処理装置。
- 前記プラズマ輸送管は、前記プラズマ発生部に連接されたプラズマ直進管と、前記プラズマ直進管に屈曲状に連接された第1プラズマ進行管と、前記第1プラズマ進行管の終端に、その管軸に対して所定屈曲角で傾斜配置させて連接された第2プラズマ進行管と、前記第2プラズマ進行管の終端に屈曲状に連接され、プラズマ出口よりプラズマを排出する第3プラズマ進行管とから構成され、前記プラズマが前記ターゲット表面から被処理物に到達するまでの合計長さLが、900mm≦L≦1350mmを満たすように設定される請求項7又は8に記載の絶縁体介装型プラズマ処理装置。
- 前記第3プラズマ進行管のプラズマ出口から前記第1プラズマ進行管のプラズマ出口側を直線状に透視させない位置に、前記第2プラズマ進行管が幾何学的に配置された請求項7、8又は9に記載の絶縁体介装型プラズマ処理装置。
- 前記第3プラズマ進行管のプラズマ入口側の管断面上端から前記第1プラズマ進行管のプラズマ出口側の管断面下端に対する仰角をθとし、前記第3プラズマ進行管のプラズマ出口側の管断面下端から前記第2プラズマ進行管のプラズマ出口側の管断面上端に対する仰角をθ0としたとき、θ≧θ0が満足される請求項9又は10に記載の絶縁体介装型プラズマ処理装置。
- 前記プラズマ直進管、前記第1プラズマ進行管、前記第2プラズマ進行管及び前記第3プラズマ進行管のそれぞれに、プラズマ搬送用磁場を発生するプラズマ搬送用磁場発生手段を設け、前記第1プラズマ進行管及び/又は前記第2プラズマ進行管に、前記プラズマ搬送用磁場を偏向させる偏向磁場発生手段を付設し、前記偏向磁場発生手段により発生される偏向磁場によりプラズマ流を管中心側に偏向させる請求項8~11のいずれかに記載の絶縁体介装型プラズマ処理装置。
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JP6121576B1 (ja) * | 2016-01-07 | 2017-04-26 | キヤノンアネルバ株式会社 | 成膜装置 |
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JP2007305485A (ja) * | 2006-05-12 | 2007-11-22 | Matsushita Electric Ind Co Ltd | アーク放電装置及びそれを用いたイオン注入装置 |
WO2008120656A1 (ja) * | 2007-03-30 | 2008-10-09 | Ferrotec Corporation | プラズマガン周辺を電気的中性にしたプラズマ生成装置 |
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