WO2010137549A1 - フレキシブル回路基板及びその製造方法 - Google Patents
フレキシブル回路基板及びその製造方法 Download PDFInfo
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- WO2010137549A1 WO2010137549A1 PCT/JP2010/058727 JP2010058727W WO2010137549A1 WO 2010137549 A1 WO2010137549 A1 WO 2010137549A1 JP 2010058727 W JP2010058727 W JP 2010058727W WO 2010137549 A1 WO2010137549 A1 WO 2010137549A1
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- WIPO (PCT)
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- layer
- nickel plating
- polyimide film
- flexible circuit
- circuit board
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
- H05K3/4608—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated comprising an electrically conductive base or core
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0277—Bendability or stretchability details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0344—Electroless sublayer, e.g. Ni, Co, Cd or Ag; Transferred electroless sublayer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/06—Thermal details
- H05K2201/068—Thermal details wherein the coefficient of thermal expansion is important
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
Definitions
- the present invention relates to a flexible circuit board and a manufacturing method thereof, and more particularly to a flexible circuit board obtained by a semi-additive process in which a seed layer is formed on an insulating film by a wet plating method and a wiring pattern is formed by a plating method.
- the FPC generally has a structure in which a circuit made of a metal foil is formed on an insulating film via an adhesive.
- thermosetting adhesive such as epoxy or acrylic is generally used (these thermosetting adhesives are used).
- the FPC used is hereinafter also referred to as “three-layer FPC”).
- Thermosetting adhesives have the advantage that they can be bonded at relatively low temperatures, but they are expected to become more demanding in the future, such as heat resistance, flexibility, and electrical reliability.
- the conventional three-layer FPC using an adhesive is considered to be difficult to cope with.
- the metal-clad laminate used for the two-layer FPC is a metal layer in which a metal layer is directly formed on a polyimide film by casting, sputtering or plating after casting or coating a polyamic acid, which is a polyimide precursor, on a metal foil. It can be obtained by a rising method, a laminating method in which a polyimide film and a metal foil are bonded via a thermoplastic polyimide.
- the most commonly used method for forming a saddle circuit at present is a method of forming a circuit by removing a part of a metal foil layer from a metal-clad laminate by etching (subtractive method).
- the subtractive method is a simple method because a circuit can be formed simply by etching a metal-clad laminate, but the etching proceeds radially rather than linearly, and the resulting circuit cross-section becomes trapezoidal, This becomes a problem when a fine circuit having a narrow line / space is formed.
- the semi-additive method is attracting attention as a fine circuit forming method that replaces the subtractive method.
- the semi-additive method is generally performed as follows. First, a resist layer is formed on the surface of the insulating layer through an extremely thin base metal layer, and then the resist film is removed from the portion where the circuit is to be formed by a method such as photography, and the base metal layer is exposed. The metal layer is formed by performing electroplating using as a power supply electrode. Thereafter, the resist layer and unnecessary base metal layer are removed by etching. Since a circuit manufactured by the semi-additive method has a substantially rectangular cross section, the problem with the subtractive method is solved, and a fine circuit can be formed with high accuracy.
- the base material used for the semi-additive method has a structure in which a base metal layer is provided on an insulating layer, it can be manufactured using any of the above-described casting method, metalizing method, or laminating method.
- the metalizing method is most suitable in that the metal layer thickness can be easily reduced.
- a circuit is formed on an underlying metal layer by electroplating, and therefore the adhesive strength of the circuit is greatly influenced by the adhesive strength between the underlying metal layer and the insulating layer. For this reason, it is necessary to use a laminated plate in which an ultrathin metal layer is firmly bonded on an insulating layer.
- Patent Document 1 methods for performing alkali treatment
- Patent Document 2 roughening treatment
- Patent Document 2 methods for performing the alkali treatment
- Patent Document 2 roughening treatment
- the alkali treatment or the surface roughening treatment there is a problem that the number of steps increases and becomes complicated.
- the cast method or the laminate method is excellent.
- an ultrathin metal foil in order to form a semi-additive base metal layer, an ultrathin metal foil must be used, but the ultrathin metal foil is poorly self-supporting, making it difficult to pass through cast and laminate lines. .
- a copper film is first formed on the insulator by plating, then a polyimide precursor is applied onto the copper film, imidized, and then the insulator is peeled off. (See Patent Document 3).
- a part of the copper film remains on the insulator side, and a uniform ultrathin metal-clad laminate may not be obtained continuously.
- JP-A-5-90737 Japanese Patent Laid-Open No. 6-210795 JP-A-6-198804 JP 2002-316386 A
- an object of the present invention is to provide a flexible circuit board that maintains high insulation reliability, has high wiring adhesion, is low in thermal expansion, and can form a fine circuit, and its It is to provide a manufacturing method.
- the present inventors have solved the above problem by using a polyimide film with an electroless nickel plating layer formed by performing wet electroless nickel plating on a polyimide film having a specific thermal expansion coefficient. I found that it could be solved.
- this invention relates to the following flexible circuit boards and its manufacturing method.
- a flexible circuit board in which wiring pattern processing is performed on a nickel plating layer of a polyimide film with a nickel plating layer in which at least a nickel plating layer is laminated on a polyimide film A flexible circuit board, wherein the polyimide film has a thermal expansion coefficient of 0 to 8 ppm / ° C. at 100 to 200 ° C., and the nickel plating layer has a thickness of 0.03 to 0.3 ⁇ m. 2.
- Nickel plating in which a polyimide film (1) having a thermal expansion coefficient of 0 to 8 ppm / ° C. at 100 ° C. to 200 ° C. is subjected to at least electroless nickel plating, and the thickness of the nickel plating layer is 0.03 to 0.3 ⁇ m.
- a first step of producing a polyimide film with a layer On the obtained polyimide film with a nickel plating layer, a second step of providing a dry film resist layer, exposing and developing, and forming a resist layer for pattern electrolytic copper plating, After removing the resist layer for electrolytic copper plating and the third step of forming a conductive layer in a pattern by performing electrolytic copper plating on the obtained polyimide film with a resist layer for electrolytic copper plating, A fourth step of selectively etching the electroless nickel plating layer in the region; Item 2.
- the flexible circuit board according to Item 1 which is obtained through the process. 4).
- a first step of producing a polyimide film with a layer On the obtained polyimide film with a nickel plating layer, a second step of providing a dry film resist layer, exposing and developing, and forming a resist layer for pattern electrolytic copper plating, After removing the resist layer for electrolytic copper plating and the third step of forming a conductive layer in a pattern by performing electrolytic copper plating on the obtained polyimide film with a resist layer for electrolytic copper plating, A fourth step of selectively etching the electroless nickel plating layer in the region; The manufacturing method of the flexible circuit board of the said claim
- item 4 including the process of forming a through-hole and / or a non-through-hole in the said polyimide film (1) before performing the electroless nickel plating process of a said 1st process. 6).
- Item 6 The flexible circuit according to Item 4 or 5, wherein the polyimide film (1) is a block copolymerization type polyimide-silica hybrid film obtained by thermosetting the alkoxy group-containing silane-modified block copolymerization polyamic acid (b). A method for manufacturing a substrate. 7).
- a resist layer for pattern electrolytic copper plating is formed using a dry film resist
- a copper circuit formed in a pattern by electrolytic copper plating has a width of 4 to 18 ⁇ m.
- Item 7. The method for producing a flexible circuit board according to any one of Items 4 to 6. 8).
- a resist layer for pattern electrolytic copper plating is formed using a dry film resist
- the height of the copper circuit formed in a pattern by electrolytic copper plating is 2 to 20 ⁇ m. 8.
- a selective etching solution having an etching rate for copper of 0.2 ⁇ m / min or less and an etching rate for an electroless nickel plating layer of 1.0 ⁇ m / min or more is used.
- Item 10 The method for producing a flexible circuit board according to any one of Items 4 to 9, wherein an electroless copper plating layer is further formed on the electroless nickel plating layer in the first step.
- the electroless nickel plating layer is directly laminated on the polyimide film having a low thermal expansion coefficient with a thickness of 0.03 to 0.3 ⁇ m, high insulation reliability is maintained and wiring adhesion is maintained. Therefore, it is possible to provide a flexible circuit board that is high, has low thermal expansion, and can form a fine circuit.
- the flexible circuit board of the present invention is excellent in thermal stability and dimensional stability.
- a high-definition conductive circuit can be formed by a simple method.
- the present invention is a flexible circuit board in which a wiring pattern is applied to a nickel plating layer of a polyimide film with a nickel plating layer in which at least a nickel plating layer is laminated on a polyimide film,
- a polyimide film (1) having a thermal expansion coefficient of 0 to 8 ppm / ° C. at 100 ° C. to 200 ° C. is subjected to at least electroless nickel plating, and the thickness of the nickel plating layer is 0.03.
- a first step of producing a polyimide film with a nickel plating layer of ⁇ 0.3 ⁇ m A second step in which a dry film resist layer is provided on a polyimide film with a nickel plating layer, exposed and developed to form a resist layer for pattern electrolytic copper plating; After the third step of forming a conductive layer in a pattern by performing electrolytic copper plating on the polyimide film with a resist layer for electrolytic copper plating, and after removing the resist layer for electrolytic copper plating, there is no region other than the electrolytic copper plated layer. It is obtained through a fourth step of selectively etching the electrolytic nickel plating layer.
- the polyimide film (1) used in the present invention is not particularly limited as long as it is a non-thermoplastic polyimide film satisfying the condition that the coefficient of thermal expansion at 100 ° C. to 200 ° C. is 0 to 8 ppm / ° C., a conventionally known polyimide film Can be used as is.
- the coefficient of thermal expansion means the value of (stretch rate) / (temperature) in the range of 100 ° C. to 200 ° C., thermomechanical analyzer (distance between chucks: 20 mm, specimen width: 4 mm, load) : Ten mg, temperature rising rate: 10 ° C / min tensile mode).
- Such a polyimide film is produced using, for example, the methods described in JP-A-5-70590, JP-A-2000-119419, JP-A-2007-56198, JP-A-2005-68408, and the like. be able to.
- Commercially available polyimide films can also be used. Examples of commercially available polyimide films include XENOMAX (trade name) manufactured by Toyobo Co., Ltd., and Pomilan T (trade name) manufactured by Arakawa Chemical Industries, Ltd.
- a block copolymerization type polyimide-silica hybrid film is preferable because of its good adhesion to electroless nickel plating and good dimensional stability.
- the block copolymerization type polyimide-silica hybrid film one produced by the following method may be used, or a commercially available film may be used.
- a commercially available block copolymerization type polyimide-silica hybrid film Pomilan T (trade name) manufactured by Arakawa Chemical Industries, Ltd. is most preferable.
- the block copolymer polyimide-silica hybrid film can be produced, for example, by thermally curing an alkoxy group-containing silane-modified block copolymer polyamic acid by the method of JP-A-2005-68408.
- the alkoxy group-containing silane-modified block copolymer type polyamic acid (b) (hereinafter referred to as “component (b)”) is, for example, a polyamic acid (1) obtained by reacting a tetracarboxylic dianhydride and a diamine compound.
- a polyamic acid (a) obtained by reacting an epoxy group-containing alkoxysilane partial condensate with tetracarboxylic dianhydride and a diamine compound. It can be obtained by mixing and condensing polyamic acid (2).
- the segment of component (a) has an alkoxysilane partial condensate in the side chain and forms silica by a sol-gel reaction.
- the segment of polyamic acid (2) does not have silica, and contributes to the development of high elastic modulus and low thermal expansion of the block copolymerization type polyimide-silica hybrid film.
- the tetracarboxylic dianhydride and the diamine compound constituting the polyamic acids (1) and (2) are such that the thermal expansion coefficient of the polyimide film at 100 ° C. to 200 ° C. is 0 to 8 ppm / ° C.
- Various known materials can be used by adjusting the seeds and amount used.
- Examples of tetracarboxylic dianhydrides used for the preparation of polyamic acids (1) and (2) include pyromellitic dianhydride, 1,2,3,4-benzenetetracarboxylic dianhydride, 1,4 , 5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 2,3,3 ′, 4′-biphenyltetracarboxylic dianhydride, 3 , 3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 2,3,3 ′, 4′-benzophenone tetracarboxylic dianhydride,
- Examples of the diamine compound used in the preparation of polyamic acids (1) and (2) include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 4,4′-diaminophenylmethane, and 3,3′-dimethyl.
- p-phenylenediamine is particularly effective for reducing the thermal expansion coefficient, so about 60 to 100 mol% of the diamine compound contained in the polyamic acid (2) is contained in p-phenylenediamine. It is preferable that
- the production of the polyamic acid (1) as a raw material of the component (a) is carried out in an organic solvent capable of dissolving the produced polyamic acid (1) and an epoxy group-containing alkoxysilane partial condensate described later.
- the polyamic acid (1) is preferably produced with a polyimide-converted solid residue of 5 to 60%.
- the polyimide-converted solid residue represents the weight percent of the polyimide with respect to the polyamic acid solution when the polyamic acid (1) is completely cured into polyimide. If the polyimide conversion solid residue is less than 5%, the production cost of the polyamic acid solution is increased.
- organic solvents to be used include dimethyl sulfoxide, diethyl sulfoxide, N, N-dimethylformamide, N, N-diethylformamide, N, N-dimethylacetamide, N, N-diethylacetamide, N-methyl-2-pyrrolidone, Mention may be made of organic polar solvents such as N-vinyl-2-pyrrolidone, phenol, o-, m- or p-cresol, xylenol, halogenated phenol, catechol, hexamethylphosphoramide, ⁇ -butyrolactone.
- aromatic hydrocarbons such as xylene and toluene can be used in combination with the polar solvent.
- the reaction temperature between the tetracarboxylic dianhydride and the diamine compound is not particularly limited as long as the amic acid group remains, but it is preferably adjusted to about ⁇ 20 to 80 ° C. Production below ⁇ 20 ° C. is uneconomical because the reaction rate is slow and requires a long time, and when it exceeds 80 ° C., the ratio of amic acid groups in polyamic acid ring-closing to imide groups increases, and epoxy groups The reaction point with the contained alkoxysilane partial condensate tends to decrease, which is not preferable.
- the epoxy group-containing alkoxysilane partial condensate used when preparing the component (a) is obtained, for example, by a dealcoholization reaction between an epoxy compound having one hydroxyl group in one molecule and an alkoxysilane partial condensate.
- the number of epoxy groups is not particularly limited as long as the epoxy compound is an epoxy compound having one hydroxyl group in one molecule.
- the epoxy compound those having a carbon number of 15 or less are preferable because the smaller the molecular weight, the better the compatibility with the alkoxysilane partial condensate and the higher the heat resistance and adhesion imparting effect.
- glycidol a product name “Epiol OH” manufactured by NOF Corporation may be used, and as an epoxy alcohol, a product name “EOA” manufactured by Kuraray Co., Ltd. may be used.
- R 1 m Si (OR 2 ) (4-m) (Wherein R 1 is an alkyl group or aryl group having 8 or less carbon atoms, R 2 is a lower alkyl group having 4 or less carbon atoms, and m is an integer of 0 or 1).
- R 1 is an alkyl group or aryl group having 8 or less carbon atoms
- R 2 is a lower alkyl group having 4 or less carbon atoms
- m is an integer of 0 or 1).
- a monomer obtained by hydrolysis and partial condensation in the presence of an acid or base catalyst and water is used.
- hydrolyzable alkoxysilane monomer that is a constituent raw material of the alkoxysilane partial condensate
- tetraalkoxysilane compounds such as tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane; methyltrimethoxysilane, Such as methyltriethoxysilane, methyltripropoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, isopropyltrimethoxysilane, isopropyltriethoxysilane Trialkoxysilane compounds; and the like.
- the alkoxysilane partial condensate is synthesized using tetramethoxysilane or methyltrimethoxysilane at 70 mol% or more. The ones made are preferred.
- alkoxysilane partial condensates those exemplified above can be used without any particular limitation. However, when two or more of these examples are mixed and used, tetraalkoxysilane in the total amount of the alkoxysilane partial condensate is used. It is preferable to use 70% by weight or more of a methoxysilane partial condensate or a methyltrimethoxysilane partial condensate.
- the number average molecular weight of the alkoxysilane partial condensate is preferably about 230 to 2000, and the average number of Si in one molecule is preferably about 2 to 11.
- the epoxy group-containing alkoxysilane partial condensate is obtained by dealcoholizing an epoxy compound having one hydroxyl group in one molecule and the alkoxysilane partial condensate.
- the use ratio of the epoxy compound and the alkoxysilane partial condensate is not particularly limited as long as the alkoxy group substantially remains.
- a partial condensate and an epoxy compound having one hydroxyl group in one molecule can be reacted.
- the alkoxysilane condensation is carried out at a charging ratio in which the hydroxyl group of the epoxy compound having one hydroxyl group in one molecule is 0.01 to 0.3 equivalent to 1 equivalent of the alkoxy group of the epoxy group-containing alkoxysilane partial condensate. It is preferable to subject the product and an epoxy compound having one hydroxyl group per molecule to a dealcoholization reaction. Since the proportion of the alkoxysilane partial condensate which is not epoxy-modified increases when the charging ratio decreases, the block copolymerization type polyimide-silica hybrid film tends to become opaque. Therefore, the charging ratio is 0.03 / More preferably, it is 1 or more.
- the reaction between the alkoxysilane partial condensate and the epoxy compound having one hydroxyl group in one molecule is carried out, for example, by carrying out a dealcoholization reaction while charging each component and distilling off the alcohol produced by heating.
- the reaction temperature is about 50 to 150 ° C., preferably 70 to 110 ° C., and the total reaction time is about 1 to 15 hours.
- the component (a) is obtained by reacting the polyamic acid (1) with the epoxy group-containing alkoxysilane partial condensate.
- the use ratio of the polyamic acid (1) and the epoxy group-containing alkoxysilane partial condensate is not particularly limited, but (the equivalent of epoxy group of the epoxy group-containing alkoxysilane partial condensate / tetracarboxylic acid used for the polyamic acid (1))
- the number of moles of acid dianhydride is preferably in the range of 0.01 to 0.6. That is, both compounds are used in such a ratio that 0.01 to 0.6 mol of the epoxy group of the partial condensate is contained per 1 mol of tetracarboxylic dianhydride.
- the above numerical value is less than 0.01, it is difficult to obtain the effect of the present invention, and when it exceeds 0.6, the polyimide-silica hybrid film tends to become opaque, which is not preferable.
- the component (b) can be obtained by reacting the component (a) with a polyamic acid (2) obtained by reacting a tetracarboxylic dianhydride and a diamine compound.
- the polyamic acid (2) to be reacted with the component (a) separately forms a polyamic acid (2) by reacting a tetracarboxylic dianhydride and a diamine compound, and the polyamic acid (2) is converted to (a).
- the tetracarboxylic dianhydride and the diamine compound may be added to the component (a) to form the polyamic acid (2) in the reaction system.
- the tetracarboxylic dianhydride and diamine compound used when preparing the polyamic acid (2) are preferably different from those used when preparing the polyamic acid (1).
- the reaction conditions for obtaining the component (b) may be the same as the conditions for preparing the component (a).
- the molecular weight of the component (b) is not particularly limited, but the number average molecular weight (polystyrene conversion value by gel permeation chromatography method) is preferably about 10,000 to 1,000,000.
- the alkoxy group-containing silane-modified block copolymer polyamic acid (b) or a solution thereof in a stoichiometric amount or more and a dehydrating agent and a catalyst amount A solution of the above-mentioned tertiary amine was cast or applied onto an endless belt to form a film, and the film was dried at a temperature of 150 ° C. or lower for about 5 to 90 minutes to form a self-supporting polyamic acid film.
- the dehydrating agent herein include aliphatic acid anhydrides such as acetic anhydride and aromatic acid anhydrides such as benzoic anhydride.
- the catalyst include aliphatic tertiary amine compounds such as triethylamine; aromatic tertiary amine compounds such as dimethylaniline; heterocyclic tertiary amine compounds such as pyridine, picoline, and isoquinoline.
- the film thickness of the polyimide film (1) thus obtained is not particularly limited, and may be appropriately determined in consideration of the voltage of the circuit, the insulation properties and the mechanical strength of the polyimide film (1). Considering the ease of making the polyimide film (1) and the workability during the production of the multilayer printed board, the film thickness of the polyimide film (1) is preferably about 5 to 50 ⁇ m.
- the polyimide film (1) obtained as described above is subjected to at least electroless nickel plating treatment to produce a polyimide film with a nickel plating layer (first step).
- the electroless nickel plating treatment is usually performed by a surface treatment step (A) (hereinafter referred to as “(A) step”), a catalyst application step (B) (hereinafter referred to as “(B) step”), a catalyst activation step ( C) (hereinafter referred to as “(C) step”) and the like, after the pretreatment for electroless nickel plating is performed on the polyimide film (1), the electroless nickel plating step (D) (hereinafter referred to as “(D)”) Process).
- a conventionally well-known alkaline surface treatment condition can be used.
- the alkaline surface treatment liquid include a sodium hydroxide aqueous solution, a potassium hydroxide aqueous solution, ammonia water, and other organic amine compounds, and a plurality of types of alkaline surface treatment liquids may be mixed and used.
- SLP-100 precondition Okuno Pharmaceutical Co., Ltd. is particularly preferable.
- the treatment conditions in the step are not particularly limited, and conventionally known electroless nickel plating catalyst application conditions can be used.
- an alkaline palladium catalyst imparting liquid, an acidic palladium catalyst imparting liquid, a platinum catalyst imparting liquid, a nickel catalyst imparting liquid, and a catalyst imparting liquid for other electroless nickel plating can be exemplified.
- Various types of electroless nickel plating catalyst-providing liquids may be mixed and used.
- As the conditions for applying the catalyst for electroless nickel plating for example, SLP-400 Catalyst (Okuno Pharmaceutical Co., Ltd.) is particularly preferable.
- step (C) used in the present invention any known step can be used without limitation as long as it can activate the catalyst supported on the polyimide film (1) in the step (B).
- these catalyst activation conditions for electroless nickel plating for example, SLP-500 accelerator (Okuno Pharmaceutical Co., Ltd.) is particularly preferable.
- a conventionally known electroless nickel plating solution can be used without limitation.
- the electroless nickel plating solution include an electroless nickel-boron plating solution, a low phosphorus type electroless nickel plating solution, a medium phosphorus type electroless nickel plating solution, and a high phosphorus type electroless nickel plating solution.
- the medium phosphorus type electroless nickel plating solution for example, SLP-600 nickel (produced by Okuno Pharmaceutical Co., Ltd.) is particularly preferable.
- a copper plating layer may be formed on the electroless nickel plating layer as long as the effects of the present invention are not impaired.
- the electroless copper plating layer can also be used as an antioxidant layer for the electroless nickel plating layer.
- the thickness of the electroless nickel plating layer is 0.03 to 0.3 ⁇ m, preferably 0.1 to 0.3 ⁇ m.
- the film thickness of the electroless nickel plating layer is less than 0.03 ⁇ m, sufficient adhesion cannot be obtained, and when it exceeds 0.3 ⁇ m, side etching may occur during selective etching of the electroless nickel plating layer. Yes, not preferred.
- a dry film resist layer is provided on the polyimide film with a nickel plating layer obtained in the first step, and exposed and developed to form a resist layer for pattern electrolytic copper plating (second step).
- the dry film resist used in the present invention is not particularly limited as long as it has sufficient adhesion to the electroless nickel plating layer or the electroless copper plating layer and is excellent in developability of a fine circuit. Can be used.
- As the dry film resist for example, ALPHA NIT4015 (manufactured by Nichigo Morton Co., Ltd.), Etertech HP3510 (manufactured by Changxing Chemical Industry Co., Ltd.) and the like can be preferably used.
- the flexible circuit board of the present invention After performing copper plating on the polyimide film with a resist layer for pattern electrolytic copper plating obtained in the second step to form a conductive layer in a pattern (third step), and further removing the resist layer for electrolytic copper plating, By selectively etching the electroless nickel plating layer in a region other than the electrolytic copper plating layer (fourth step), the flexible circuit board of the present invention is obtained.
- the resist stripping solution used when removing the resist layer for electrolytic copper plating is not particularly limited as long as it can remove the resist layer for electrolytic copper plating. It is preferable to use a resist that can be quickly removed and removed in small pieces.
- OPC Parsori-312 (Okuno Pharmaceutical Co., Ltd.) is particularly preferable as the resist stripping solution.
- the etching solution used when selectively etching the electroless nickel plating layer in a region other than the electrolytic copper plating layer is not particularly limited as long as the electroless nickel plating layer can be selectively etched. Although it is possible to dissolve and remove the electroless nickel plating layer, it is preferable to use one having a low etching rate for the electrolytic copper plating layer. That is, only nickel plating is preferentially used by using a selective etching solution in which the etching rate for the electroless nickel plating layer is 1.0 ⁇ m / min or more and the etching rate for copper is 0.2 ⁇ m / min or less.
- the width and height of the copper circuit formed by patterning by electrolytic copper plating is about 4 to 18 ⁇ m wide, which is the width and height required as a fine pitch. It can be about 2 to 20 ⁇ m.
- the laminated substrate after the etching treatment is preferably washed with an acidic aqueous solution or water in order to remove the etching solution. ⁇ ⁇ ⁇ ⁇
- the patterned metal conductive layer thus obtained has a sufficient thickness and is formed according to a high resolution pattern.
- the flexible circuit board manufacturing method of the present invention is a simple method, and a high-definition conductive circuit is formed.
- Example 1 Adhesive strength measurement sample
- SLP process Oletrachloro-5-butane
- a polyimide film with an electroless nickel plating layer thickness of the electroless nickel plating layer was produced.
- Example 2 Adhesive strength measurement sample
- SLP process Oleuno Pharmaceutical Co., Ltd.
- a polyimide film with an electroless nickel plating layer electroless nickel plating layer thickness: 0.3 ⁇ m
- Example 3 Evaluation of microcircuit formation
- SLP process Oletrachloro Chemical Co., Ltd.
- Example 4 Evaluation of microcircuit formation
- SLP process Oleuno Pharmaceutical Co., Ltd.
- electroless nickel plating layer thickness: 0.3 ⁇ m was produced.
- Comparative Example 2 Evaluation of microcircuit formation
- SLP process Oleuno Pharmaceutical Co., Ltd.
- electroless nickel plating layer thickness: 1.0 ⁇ m was produced.
- Comparative Example 1 when a polyimide film having a high thermal linear expansion coefficient is used, the adhesive strength with the electroless nickel plating layer is insufficient, so that the circuit adhesion of the obtained circuit board is very low. It became. As shown in Comparative Example 2, when the electroless nickel plating layer is thick, even the nickel layer below the conductive layer is etched during etching, and the conductive layer is lifted and peeled off. On the other hand, as shown in Examples 1 and 2, when a polyimide film having a low coefficient of thermal expansion was used, high adhesive strength was obtained even after heating. In the case of Examples 3 and 4, a circuit board in which a fine circuit was formed was obtained.
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Abstract
Description
1. ポリイミドフィルムに、少なくともニッケルめっき層が積層されたニッケルめっき層付きポリイミドフィルムのニッケルめっき層に、配線パターン加工が施されたフレキシブル回路基板であって、
前記ポリイミドフィルムの100℃から200℃での熱膨張係数が0~8ppm/℃であり、前記ニッケルめっき層の厚みが0.03~0.3μmである、フレキシブル回路基板。
2. 前記ニッケルめっき層の厚みが0.1~0.3μmである、上記項1に記載のフレキシブル回路基板。
3. 100℃から200℃での熱膨張係数が0~8ppm/℃であるポリイミドフィルム(1)を、少なくとも無電解ニッケルめっき処理してニッケルめっき層の厚みが0.03~0.3μmであるニッケルめっき層付きポリイミドフィルムを製造する第1工程、
得られたニッケルめっき層付きポリイミドフィルム上に、ドライフィルムレジスト層を設け露光、現像し、パターン電気銅めっき用レジスト層を形成する第2工程、
得られた電気銅めっき用レジスト層付ポリイミドフィルムに、電気銅めっきを行ってパターン状に導電層を形成する第3工程、および
電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層を選択エッチングする第4工程、
を経て得られる、上記項1に記載のフレキシブル回路基板。
4. 100℃から200℃での熱膨張係数が0~8ppm/℃であるポリイミドフィルム(1)を、少なくとも無電解ニッケルめっき処理してニッケルめっき層の厚みが0.03~0.3μmであるニッケルめっき層付きポリイミドフィルムを製造する第1工程、
得られたニッケルめっき層付きポリイミドフィルム上に、ドライフィルムレジスト層を設け露光、現像し、パターン電気銅めっき用レジスト層を形成する第2工程、
得られた電気銅めっき用レジスト層付ポリイミドフィルムに、電気銅めっきを行ってパターン状に導電層を形成する第3工程、および
電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層を選択エッチングする第4工程、
を含む、上記項1に記載のフレキシブル回路基板の製造方法。
5. 前記第1工程の無電解ニッケルめっき処理を行う前に、前記ポリイミドフィルム(1)に貫通孔および/または非貫通孔を形成する工程、を含む上記項4に記載のフレキシブル回路基板の製造方法。
6. 前記ポリイミドフィルム(1)がアルコキシ基含有シラン変性ブロック共重合型ポリアミック酸(b)を熱硬化して得られるブロック共重合型ポリイミド-シリカハイブリッドフィルムである、上記項4又は5に記載のフレキシブル回路基板の製造方法。
7. 前記第2工程で、ドライフィルムレジストを使ってパターン電気銅めっき用レジスト層を形成し、前記第3工程で、電気銅めっきを行ってパターン状に形成される銅回路の幅が4~18μmである、上記項4~6のいずれかに記載のフレキシブル回路基板の製造方法。
8. 前記第2工程で、ドライフィルムレジストを使ってパターン電気銅めっき用レジスト層を形成し、前記第3工程で、電気銅めっきを行ってパターン状に形成される銅回路の高さが2~20μmである、上記項4~7のいずれかに記載のフレキシブル回路基板の製造方法。
9. 前記第4工程の選択エッチングに、銅に対するエッチングレートが0.2μm/min以下であり、かつ無電解ニッケルめっき層に対するエッチングレートが1.0μm/min以上である選択エッチング液を使用する、上記項4~8のいずれかに記載のフレキシブル回路基板の製造方法。
10. 前記第1工程において、無電解ニッケルめっき層の上に、さらに無電解銅めっき層を形成する、上記項4~9のいずれかに記載のフレキシブル回路基板の製造方法。
前記ポリイミドフィルムの100℃から200℃での熱膨張係数が0~8ppm/℃であり、前記ニッケルめっき層の厚みが0.03~0.3μmである、フレキシブル回路基板である。
ニッケルめっき層付きポリイミドフィルム上に、ドライフィルムレジスト層を設け露光、現像し、パターン電気銅めっき用レジスト層を形成する第2工程、
電気銅めっき用レジスト層付ポリイミドフィルムを、電気銅めっきを行ってパターン状に導電層を形成する第3工程、および
電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層を選択エッチングする第4工程、を経て得られるものである。
R1 mSi(OR2)(4-m)
(式中、R1は炭素数8以下のアルキル基またはアリール基、R2は炭素数4以下の低級アルキル基、mは0または1の整数を示す。)で表される加水分解性アルコキシシランモノマーを、酸または塩基触媒、および水の存在下で加水分解し、部分的に縮合させて得られるものが用いられる。
ポリイミド-シリカハイブリッドフィルム(荒川化学工業(株)製 商品名 ポミランT25 ジアミン成分中のp-フェニレンジアミンのモル%=80%、100℃から200℃での熱膨張係数=4ppm、膜厚25μm)に、SLPプロセス(奥野製薬工業(株)製)を使用し、無電解ニッケルめっき層付きポリイミドフィルム(無電解ニッケルめっき層の厚み:0.1μm)を作製した。ニッケルめっき層の上にドライフィルムレジストNIT4015(ニチゴー・モートン(株)製)を貼り合わせ、通常の条件にてL/S=1/1mmのパターン電気銅めっき用レジスト層を形成した後、トップルチナSF(奥野製薬工業(株)製)を用いて電気銅めっきを行ってパターン状に導電層(導電層の厚み:9μm)を形成し、電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層をトップリップNIP(奥野製薬工業(株)製)を用いて選択エッチングすることにより、フレキシブル回路基板を作製した。
ポリイミド-シリカハイブリッドフィルム(荒川化学工業(株)製 商品名 ポミランT25 ジアミン成分中のp-フェニレンジアミンのモル%=80%、100℃から200℃での熱膨張係数=4ppm、膜厚25μm)に、SLPプロセス(奥野製薬工業(株)製)を使用し、無電解ニッケルめっき層付きポリイミドフィルム(無電解ニッケルめっき層の厚み:0.3μm)を作製した。ニッケルめっき層の上にドライフィルムレジストNIT4015(ニチゴー・モートン(株)製)を貼り合わせ、通常の条件にてL/S=1/1mmのパターン電気銅めっき用レジスト層を形成した後、トップルチナSF(奥野製薬工業(株)製)を用いて電気銅めっきを行ってパターン状に導電層(導電層の厚み:9μm)を形成し、電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層をトップリップNIP(奥野製薬工業(株)製)を用いて選択エッチングすることにより、フレキシブル回路基板を作製した。
市販のポリイミドフィルム(東レデュポン(株)製 商品名 カプトンH、ジアミン成分中のp-フェニレンジアミンのモル%=0%、100℃から200℃での熱膨張係数=43ppm、膜厚25μm)にSLPプロセス(奥野製薬工業(株)製)を使用し、無電解ニッケルめっき層付きポリイミドフィルム(無電解ニッケルめっき層の厚み:0.3μm)を作製した。ニッケルめっき層の上にドライフィルムレジストNIT4015(ニチゴー・モートン(株)製)を貼り合わせ、通常の条件にてL/S=1/1mmのパターン電気銅めっき用レジスト層を形成した後、トップルチナSF(奥野製薬工業(株)製)を用いて電気銅めっきを行ってパターン状に導電層(導電層の厚み:9μm)を形成し、電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層をトップリップNIP(奥野製薬工業(株)製)を用いて選択エッチングすることにより、フレキシブル回路基板を作製した。
ポリイミド-シリカハイブリッドフィルム(荒川化学工業(株)製 商品名 ポミランT25 ジアミン成分中のp-フェニレンジアミンのモル%=80%、100℃から200℃での熱膨張係数=4ppm、膜厚25μm)に、SLPプロセス(奥野製薬工業(株)製)を使用し、無電解ニッケルめっき層付きポリイミドフィルム(無電解ニッケルめっき層の厚み:0.1μm)を作製した。ニッケルめっき層の上にドライフィルムレジストNIT4015(ニチゴー・モートン社製)を貼り合わせ、通常の条件にてL/S=10/10μmのパターン電気銅めっき用レジスト層を形成した後、トップルチナSF(奥野製薬工業(株)製)を用いて電気銅めっきを行ってパターン状に導電層(導電層の厚み:9μm)を形成し、電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層をトップリップNIP(奥野製薬工業(株)製)を用いて選択エッチングすることにより、フレキシブル回路基板を作製した。
ポリイミド-シリカハイブリッドフィルム(荒川化学工業(株)製 商品名 ポミランT25 ジアミン成分中のp-フェニレンジアミンのモル%=80%、100℃から200℃での熱膨張係数=4ppm、膜厚25μm)に、SLPプロセス(奥野製薬工業(株)製)を使用し、無電解ニッケルめっき層付きポリイミドフィルム(無電解ニッケルめっき層の厚み:0.3μm)を作製した。ニッケルめっき層の上にドライフィルムレジストNIT4015(ニチゴー・モートン社製)を貼り合わせ、通常の条件にてL/S=10/10μmのパターン電気銅めっき用レジスト層を形成した後、トップルチナSF(奥野製薬工業(株)製)を用いて電気銅めっきを行ってパターン状に導電層(導電層の厚み:9μm)を形成し、電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層をトップリップNIP(奥野製薬工業(株)製)を用いて選択エッチングすることにより、フレキシブル回路基板を作製した。
ポリイミド-シリカハイブリッドフィルム(荒川化学工業(株)製 商品名 ポミランT25 ジアミン成分中のp-フェニレンジアミンのモル%=80%、100℃から200℃での熱膨張係数=4ppm、膜厚25μm)に、SLPプロセス(奥野製薬工業(株)製)を使用し、無電解ニッケルめっき層付きポリイミドフィルム(無電解ニッケルめっき層の厚み:1.0μm)を作製した。ニッケルめっき層の上にドライフィルムレジストNIT4015(ニチゴー・モートン(株)製)を貼り合わせ、通常の条件にてL/S=10/10μmのパターン電気銅めっき用レジスト層を形成した後、トップルチナSF(奥野製薬工業(株)製)を用いて電気銅めっきを行ってパターン状に導電層(導電層の厚み:9μm)を形成し、電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層をトップリップNIP(奥野製薬工業(株)製)を用いて選択エッチングすることにより、フレキシブル回路基板を作製した。
実施例1及び2、及び比較例1により得られた回路基板の導体層部分(3mm幅)を、180°の剥離角度、50mm/分の条件で剥離し、その荷重を測定した。また、同様にして得られた回路基板を150℃、168時間加熱を行った後、同様にして剥離時の荷重を測定した。その結果を表1に示す。
Claims (10)
- ポリイミドフィルムに、少なくともニッケルめっき層が積層されたニッケルめっき層付きポリイミドフィルムのニッケルめっき層に、配線パターン加工が施されたフレキシブル回路基板であって、
前記ポリイミドフィルムの100℃から200℃での熱膨張係数が0~8ppm/℃であり、前記ニッケルめっき層の厚みが0.03~0.3μmである、フレキシブル回路基板。 - 前記ニッケルめっき層の厚みが0.1~0.3μmである、請求項1に記載のフレキシブル回路基板。
- 100℃から200℃での熱膨張係数が0~8ppm/℃であるポリイミドフィルム(1)を、少なくとも無電解ニッケルめっき処理してニッケルめっき層の厚みが0.03~0.3μmであるニッケルめっき層付きポリイミドフィルムを製造する第1工程、
得られたニッケルめっき層付きポリイミドフィルム上に、ドライフィルムレジスト層を設け露光、現像し、パターン電気銅めっき用レジスト層を形成する第2工程、
得られた電気銅めっき用レジスト層付ポリイミドフィルムに、電気銅めっきを行ってパターン状に導電層を形成する第3工程、および
電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層を選択エッチングする第4工程、
を経て得られる請求項1に記載のフレキシブル回路基板。 - 100℃から200℃での熱膨張係数が0~8ppm/℃であるポリイミドフィルム(1)を、少なくとも無電解ニッケルめっき処理してニッケルめっき層の厚みが0.03~0.3μmであるニッケルめっき層付きポリイミドフィルムを製造する第1工程、
得られたニッケルめっき層付きポリイミドフィルム上に、ドライフィルムレジスト層を設け露光、現像し、パターン電気銅めっき用レジスト層を形成する第2工程、
得られた電気銅めっき用レジスト層付ポリイミドフィルムに、電気銅めっきを行ってパターン状に導電層を形成する第3工程、および
電気銅めっき用レジスト層を除去した後に、電気銅めっき層以外の領域の無電解ニッケルめっき層を選択エッチングする第4工程、
を含む、請求項1に記載のフレキシブル回路基板の製造方法。 - 前記第1工程の無電解ニッケルめっき処理を行う前に、前記ポリイミドフィルム(1)に貫通孔および/または非貫通孔を形成する工程、を含む請求項4に記載のフレキシブル回路基板の製造方法。
- 前記ポリイミドフィルム(1)がアルコキシ基含有シラン変性ブロック共重合型ポリアミック酸(b)を熱硬化して得られるブロック共重合型ポリイミド-シリカハイブリッドフィルムである、請求項4又は5に記載のフレキシブル回路基板の製造方法。
- 前記第2工程で、ドライフィルムレジストを使ってパターン電気銅めっき用レジスト層を形成し、前記第3工程で、電気銅めっきを行ってパターン状に形成される銅回路の幅が4~18μmである、請求項4~6のいずれかに記載のフレキシブル回路基板の製造方法。
- 前記第2工程で、ドライフィルムレジストを使ってパターン電気銅めっき用レジスト層を形成し、前記第3工程で、電気銅めっきを行ってパターン状に形成される銅回路の高さが2~20μmである、請求項4~7のいずれかに記載のフレキシブル回路基板の製造方法。
- 前記第4工程の選択エッチングに、銅に対するエッチングレートが0.2μm/min以下であり、かつ無電解ニッケルめっき層に対するエッチングレートが1.0μm/min以上である選択エッチング液を使用する、請求項4~8のいずれかに記載のフレキシブル回路基板の製造方法。
- 前記第1工程において、無電解ニッケルめっき層の上に、さらに無電解銅めっき層を形成する、請求項4~9のいずれかに記載のフレキシブル回路基板の製造方法。
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JP2011516009A JPWO2010137549A1 (ja) | 2009-05-26 | 2010-05-24 | フレキシブル回路基板及びその製造方法 |
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CN103813622A (zh) * | 2013-11-07 | 2014-05-21 | 溧阳市江大技术转移中心有限公司 | 电路板及其制造方法 |
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KR102081078B1 (ko) * | 2018-07-02 | 2020-02-25 | 도레이첨단소재 주식회사 | 연성동박적층필름 및 이의 제조방법 |
WO2021031507A1 (en) * | 2019-08-22 | 2021-02-25 | Compass Technology Company Limited | Formation of fine pitch traces using ultra-thin paa modified fully additive process |
CN110698682B (zh) * | 2019-09-27 | 2022-02-22 | 武汉华星光电半导体显示技术有限公司 | 一种聚酰亚胺复合物材料、其制备方法及其应用 |
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JPWO2010137549A1 (ja) | 2012-11-15 |
US20140014521A1 (en) | 2014-01-16 |
JP2014179638A (ja) | 2014-09-25 |
KR20120023769A (ko) | 2012-03-13 |
CN102450110A (zh) | 2012-05-09 |
TWI494036B (zh) | 2015-07-21 |
US20120037405A1 (en) | 2012-02-16 |
TW201106823A (en) | 2011-02-16 |
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