WO2010098538A3 - Solar cell and method of manufacturing the same - Google Patents

Solar cell and method of manufacturing the same Download PDF

Info

Publication number
WO2010098538A3
WO2010098538A3 PCT/KR2010/000155 KR2010000155W WO2010098538A3 WO 2010098538 A3 WO2010098538 A3 WO 2010098538A3 KR 2010000155 W KR2010000155 W KR 2010000155W WO 2010098538 A3 WO2010098538 A3 WO 2010098538A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
manufacturing
same
amorphous silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/000155
Other languages
French (fr)
Other versions
WO2010098538A2 (en
Inventor
Youngjoo Eo
Sehwon Ahn
Seungyoon Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Priority to CN2010800024345A priority Critical patent/CN102138224A/en
Priority to EP10746377A priority patent/EP2401766A2/en
Publication of WO2010098538A2 publication Critical patent/WO2010098538A2/en
Publication of WO2010098538A3 publication Critical patent/WO2010098538A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A solar cell and a method of manufacturing the same are discussed. The solar cell includes an amorphous silicon layer, and a density of Si-Si bonds in the amorphous silicon layer is 7.48x1022 /cm3 to 9.4x1022/cm3. The method includes forming an electrode on a substrate and depositing amorphous silicon on the substrate in an atmosphere in which a ratio of an amount of hydrogen (H2) gas to an amount of silane (SiH4) gas is 15:1 to 30:1 to form an amorphous silicon layer on the substrate.
PCT/KR2010/000155 2009-02-25 2010-01-11 Solar cell and method of manufacturing the same Ceased WO2010098538A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010800024345A CN102138224A (en) 2009-02-25 2010-01-11 Solar cell and method of manufacturing the same
EP10746377A EP2401766A2 (en) 2009-02-25 2010-01-11 Solar cell and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090015781A KR20100096747A (en) 2009-02-25 2009-02-25 Solar cell and method for manufacturing thereof
KR10-2009-0015781 2009-02-25

Publications (2)

Publication Number Publication Date
WO2010098538A2 WO2010098538A2 (en) 2010-09-02
WO2010098538A3 true WO2010098538A3 (en) 2010-11-18

Family

ID=42629873

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/000155 Ceased WO2010098538A2 (en) 2009-02-25 2010-01-11 Solar cell and method of manufacturing the same

Country Status (5)

Country Link
US (1) US20100212739A1 (en)
EP (1) EP2401766A2 (en)
KR (1) KR20100096747A (en)
CN (1) CN102138224A (en)
WO (1) WO2010098538A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102332456B (en) * 2011-10-11 2013-09-04 清华大学 Photodetector integrated device and manufacturing method thereof
CN106531834B (en) * 2016-11-30 2018-01-30 华中科技大学 A kind of HIT solar cells and preparation method thereof
CN109449257B (en) * 2018-05-04 2021-01-19 中国科学院上海微系统与信息技术研究所 Amorphous thin film post-hydrogenation treatment method and silicon heterojunction solar cell preparation method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857115A (en) * 1987-05-15 1989-08-15 Sanyo Electric Co., Ltd. Photovoltaic device
US5492142A (en) * 1992-09-11 1996-02-20 Sanyo Electric Co., Ltd. Polycrystalline silicon photovoltaic device
US20090020154A1 (en) * 2007-01-18 2009-01-22 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2740284B2 (en) * 1989-08-09 1998-04-15 三洋電機株式会社 Photovoltaic element
US6723421B2 (en) * 2001-10-05 2004-04-20 Energy Conversion Devices, Inc. Semiconductor with coordinatively irregular structures
JP2004296693A (en) * 2003-03-26 2004-10-21 Canon Inc Multilayer photovoltaic device and current balance adjustment method
JP2005197608A (en) * 2004-01-09 2005-07-21 Mitsubishi Heavy Ind Ltd Photoelectric converting device
DE102005013537A1 (en) * 2004-03-24 2005-10-20 Sharp Kk Photoelectric converter and manufacturing method for such

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857115A (en) * 1987-05-15 1989-08-15 Sanyo Electric Co., Ltd. Photovoltaic device
US5492142A (en) * 1992-09-11 1996-02-20 Sanyo Electric Co., Ltd. Polycrystalline silicon photovoltaic device
US20090020154A1 (en) * 2007-01-18 2009-01-22 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Z.E.SMITH ET AL.: "Intrinsic dangling-bond density in hydrogenated amorphous silicon", PHYSICAL REVIEW B, vol. 32, no. 8, 15 October 1985 (1985-10-15), pages 5510 - 5513, XP000820428 *

Also Published As

Publication number Publication date
KR20100096747A (en) 2010-09-02
WO2010098538A2 (en) 2010-09-02
EP2401766A2 (en) 2012-01-04
CN102138224A (en) 2011-07-27
US20100212739A1 (en) 2010-08-26

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