WO2010097389A1 - Ir detector system - Google Patents
Ir detector system Download PDFInfo
- Publication number
- WO2010097389A1 WO2010097389A1 PCT/EP2010/052289 EP2010052289W WO2010097389A1 WO 2010097389 A1 WO2010097389 A1 WO 2010097389A1 EP 2010052289 W EP2010052289 W EP 2010052289W WO 2010097389 A1 WO2010097389 A1 WO 2010097389A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- signal
- circuit
- detector
- pixel
- skim
- Prior art date
Links
- 238000001514 detection method Methods 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000012545 processing Methods 0.000 claims abstract description 7
- 238000001931 thermography Methods 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 description 17
- 102100024209 CD177 antigen Human genes 0.000 description 5
- 101000980845 Homo sapiens CD177 antigen Proteins 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
- H04N23/23—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from thermal infrared radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/33—Transforming infrared radiation
Definitions
- the invention relates to an Infra Red (IR) detector system and method. More specifically but not exclusively it relates to an IR detector system equipped with in pixel target detection operating in a full TV format.
- IR Infra Red
- an IR detector system comprising at least one comparator and a Focal Plane Array (FPA) detector pixel in which a skim circuit is provided in the FPA detector pixel to provide in-pixel signal processing such that signals over a certain level are identified.
- FPA Focal Plane Array
- This IR detector technology can be used for normal thermal imaging operation and for target detection applications either separately or in combination.
- the signal threshold detection technique and digital readout method embodied in the embodiments of the invention described below provides a means to deliver high speed data, enabling detector operation at extremely high frame rates as required by applications such as detecting weapon muzzle flash or projectile trajectories.
- FIG. 1 (a) is a schematic diagram showing a Direct Inject Gate (DIG) pixel circuit
- Figure 1 (b) is a schematic diagram showing a DIG circuit with sample and hold to implement an Integrate While Read (IWR) function;
- Figure 2 is a schematic diagram showing one form of digital target detection architecture showing pixel to output signal flow in accordance with the invention
- FIG. 3 is a schematic diagram showing signal detection timing in accordance with one form of the invention.
- FIG. 4 is a schematic diagram showing signal processing flow and data output timing in accordance with one form of the invention.
- Infra-Red focal plane 2D array detector pixel circuits often use the Direct Inject Gate (DIG) circuit of the form shown in Figure 1 (a). They are simple and perform well across a range of applications and are widely described elsewhere.
- Each pixel comprises a Direct Inject transistor (M1 ), an integration capacitor (Cint) a reset transistor (M5) and an output source follower transistor M3.
- the integration capacitor Cint is reset to the Pixel Reset Voltage PRV1 by pulsing transistor M5 RS1 gate input.
- Image data is acquired as a voltage on Cint by operating the DIG transistor M1 to bias the detector diode D with respect to the diode COMmon terminal.
- Diode photocurrent integrates signal charge from Cint for the duration the bias is applied, the integration time.
- Data is typically output from a 2D array a row at a time using the row address input (ROW ADDR) that operates transistor M4.
- the signal voltage across Cint is then output from the source follower transistor M3 which develops a voltage Vout across a current sink load that is then output from the array using a separate column multiplexer (not shown).
- the simple Direct Inject circuit can be extended to provide an Integrate While Read (IWR) function by adding a transistor switch (M2) and storage capacitor (Ch) that are configured and operated as a sample and hold circuit. See Figure 1 (b).
- a separate reset transistor M6 allows the hold capacitor Ch to be reset to the voltage on PRV2 independently of Cint.
- the circuit operates similarly to the direct inject circuit after which the hold capacitor (Ch) is reset to the Pixel Reset Voltage 2 (PRV2) level by pulsing the reset transistor switch M6 RS2 gate input.
- the sample and hold transistor switch M2 is turned on by applying a logic HIGH signal to VG2 input and by a charge share technique, the signal voltage across Cint appears across Ch. The input signal voltage is reduced proportionally by the ratio of the two capacitors Cint and Ch. Ideally Cint»Ch to avoid unnecessary signal attenuation.
- the transistor switch M2 is turned off by applying a logic LOW to VG2 and a 'copy' of the attenuated signal remains on the hold capacitor. While transistor switch M2 is turned off the integrator circuit (D, M1 , Cint and M5) may be operated independently of the readout circuit M3 and M4 to give the IWR function.
- the circuit may be configured and operated differently. Configuring the circuit that drives the sample and hold transistor M2 gate VG2 to operate by providing a pulse to an intermediate voltage allows the circuit to operate differently in a so called 'skim mode' using the bias property of the transistor.
- Vt threshold voltage
- the transistor turns on and current flows through the transistor drain - source when a voltage difference exists.
- Vt threshold voltage
- a proportion of the signal is acquired and its value is determined by the voltage set on VG2 and input signal voltages and the ratio of the capacitors. Sufficient time must be provided for SKIM to be stable when applied and for the charge transfer operation to complete. In high signal cases especially, the capacitors may discharge further as expected which still provides detected signal information on Ch.
- skim circuit can be configured and operated to provide an in-pixel signal detection function to identify signals over a certain level.
- a high speed comparator can be used to detect the change in voltage across Ch with respect to the detection reference level VRef to provide a digital output for detected target information.
- PRV1 and PRV2 are set to a voltage higher than the voltage applied to transistor M2 gate terminal VG2 minus Vt so that the transistor is held in an 'off' state.
- the voltage applied to VG2 sets the detection threshold and is called THRESHOLD.
- PRV2 would be set towards the circuit supply voltage VDD, typically in the range 5-6 Volts, and PRV1 would be set according to the prevailing electro optic operating conditions typically in the range 4-6 Volts.
- THRESHOLD would be set typically in the range 3 - 4.5 Volts according to the required signal detection threshold and the average scene signal level.
- the pixel output Vout connects to existing analogue output circuits (not described). Each column of pixel outputs is also connected to one input of a comparator array A1 - Ac where c is the number of columns in the array. There is one comparator per column of pixel circuits. The digital output of the comparator array Dn connects to the output data register.
- the circuit in Figure 2 operates similarly to the normal imaging direct inject circuit operation technique described above. Prior to circuit operation, DIG is held off and the capacitors are reset by pulsing their respective reset transistor controls RS1 and RS2; Cint is reset to PRV1 and Ch to is reset to PRV2. THRESHOLD is held off.
- the diode bias DIG is applied for the duration of the integration period Tint.
- photo current lph from diode D integrates charge from Cint proportional to the signal.
- THRESHOLD is then applied to transistor M2 VG2 terminal for sufficient time to ensure a stable voltage and skim circuit operation.
- Signals on Cint below the detection threshold (THRESHOLD - Vt) will be insufficient to cause the transistor M2 to operate in skim mode leaving no resultant signal on Ch.
- signals that are higher than the detection threshold will operate transistor M2 resulting in current flow from Ch until pinch off and signal voltage will result on capacitor Ch.
- the circuit has operated to detect signal information above or below the signal detection threshold and signal detection data will exist on all Ch.
- THRESHOLD is removed from VG2 and signal detection data remains on Ch.
- signal detection data is accessed from each row by asserting ROW_ADDR.
- the signal voltage on Ch Vout is developed across ILOAD and scanned out from the whole array using a conventional X-Y readout technique (not shown).
- signals are processed to provide a digital output in the binary form 'signal detected, signal not detected' format.
- the comparators may be powered off when not needed to save power. They are powered up using the control Pup ahead of use.
- the Pup control may be applied ahead of point of use to ensure comparator settling time does not delay the signal processing.
- Each row of pixel data are accessing in sequence for processing by asserting ROWADDR.
- the Ch signal data is then detected using a high speed comparator An.
- Vout is compared against a reference voltage Vref.
- the reference voltage is set to determine the signal detection threshold considering the average scene levels and variation in other parameters such as scene offset voltages and comparator offset voltage.
- the comparator output is asserted for target signals exceeding the threshold and is retracted for the range of signals below the threshold level or vice versa.
- the comparator digital output data Dn is latched into an output data register as each row is addressed using the parallel load PL signal.
- the comparators are then be powered down. Data is output during the readout time from the register at DOUT using the high speed data clock DoutCk.
- Each row in the 2D array is addressed and output as an analogue signal level or as digital detected target data in a sequence. The sequence is repeated for the next row. It will be appreciated that depending on the comparator implementation and speed it may be advantageous to keep the comparators powered.
- the comparator is able to operate very fast as the signal dynamics are significantly faster and operate to only two levels avoiding the need for input signal to settle. It will be appreciated that the scheme could be extended to provide a number of levels, say 4 at expense of increased data bandwidth and frame rate.
- Comparators would compare the detected signal on Ch to other voltage thresholds (Vref2 etc ..) to provide other additional digital information on signal magnitude output in a similar way. It is expected the circuit can be operated at 100MHz achieving a full TV readout time of around 3ms with a single digital output or less than 0.5ms using 8 digital outputs enabling operation at frame rates well over 1 kHz.
- the digital target detection function operates in addition to normal conventional IR detector imaging operation.
- the pixel circuits may be configured to provide analogue signals from the same image data on Cint by operating transistor M2 as a switch. Signal data will charge share with Ch and the resultant image data may then be readout from the detector using a conventional X-Y scan approach.
- DIG is retracted and the capacitors are again reset to their respective Pixel Reset Voltage levels (PRV1 and PRV2).
- THRESHOLD bias is applied to VG2.
- the capacitor reset transistors are operated using the controls RS1 and RS2 and the reset voltages appear on Cint and Ch. As the transistor source and drain voltages are higher than the gate voltage THRESHOLD - Vt the transistor is off and there is no current flow.
- DIG is asserted and a photo current signal lph is acquired on Cint as described above, Vsignal.
- the voltage on Cint falls at a low rate depending on a number of parameters including the background scene temperature.
- the pixel circuit may be configured and used at other voltages than those indicated above.
- This IR detector technology can be used for normal thermal imaging operation and for target detection applications either separately or in combination.
- the signal threshold detection technique and digital readout method embodied in the typical circuits above provides a means to deliver high speed data enabling detector operation at extremely high frame rates as required by applications such as detecting weapon muzzle flash or projectile trajectories. This technology is expected to provide a step change capability for hostile target detection.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2749808A CA2749808A1 (en) | 2009-02-24 | 2010-02-23 | Ir detector system |
AU2010217623A AU2010217623B2 (en) | 2009-02-24 | 2010-02-23 | IR detector system |
US13/202,916 US9063012B2 (en) | 2009-02-24 | 2010-02-23 | IR detector system and method |
EP10705863.8A EP2401590B1 (en) | 2009-02-24 | 2010-02-23 | Ir detector system |
IL214633A IL214633A0 (en) | 2009-02-24 | 2011-08-14 | Ir detector system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0903095.8 | 2009-02-24 | ||
GBGB0903095.8A GB0903095D0 (en) | 2009-02-24 | 2009-02-24 | IR Detector System and Method |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010097389A1 true WO2010097389A1 (en) | 2010-09-02 |
Family
ID=41259212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2010/052289 WO2010097389A1 (en) | 2009-02-24 | 2010-02-23 | Ir detector system |
Country Status (7)
Country | Link |
---|---|
US (1) | US9063012B2 (en) |
EP (1) | EP2401590B1 (en) |
AU (1) | AU2010217623B2 (en) |
CA (1) | CA2749808A1 (en) |
GB (1) | GB0903095D0 (en) |
IL (1) | IL214633A0 (en) |
WO (1) | WO2010097389A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3027479A1 (en) * | 2014-10-21 | 2016-04-22 | Commissariat Energie Atomique | PIXEL OF IMAGE SENSOR HAVING MULTIPLE SENSING KNOT GAINS |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8970706B2 (en) * | 2011-09-22 | 2015-03-03 | Basil Henry Scott | Dual pixel pitch imaging array with extended dynamic range |
KR101368244B1 (en) * | 2011-12-30 | 2014-02-28 | 주식회사 실리콘웍스 | Circuit for sensing threshold voltage of organic light emitting diode display device |
US8866532B2 (en) * | 2012-04-02 | 2014-10-21 | Semiconductor Components Industries, Llc | Passive integrator and method |
IL236364B (en) * | 2014-12-21 | 2019-01-31 | Elta Systems Ltd | Methods and systems for flash detection |
US9800807B2 (en) * | 2016-02-26 | 2017-10-24 | Intel Corporation | Image sensor operation for shutter modulation and high dynamic range |
US10575806B2 (en) * | 2018-03-22 | 2020-03-03 | International Business Machines Corporation | Charge amplifiers that can be implemented in thin film and are useful for imaging systems such as digital breast tomosynthesis with reduced X-ray exposure |
US10681289B2 (en) | 2018-04-25 | 2020-06-09 | L3 Cincinnati Electronics Corporation | Designs and methods of multi-function digital readout integrated circuits with an embedded programmable gate array |
FR3103964B1 (en) * | 2019-11-29 | 2021-11-26 | Pyxalis | Dynamically adjustable pixel for noise reduction |
CN111879412B (en) * | 2020-08-03 | 2021-12-21 | 烟台艾睿光电科技有限公司 | Image generation method and device for refrigeration type infrared detector and readable storage medium |
FR3132187B1 (en) * | 2022-01-25 | 2024-01-19 | Commissariat Energie Atomique | CALIBRATION OF AN IWR DIGITAL IMAGE PIXEL |
WO2024156940A1 (en) * | 2023-01-26 | 2024-08-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Calibration of an imager iwr digital pixel |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2004074789A1 (en) * | 2003-02-17 | 2004-09-02 | Raytheon Company | Multi-mode dual integration detector circuit |
WO2008027193A2 (en) * | 2006-08-29 | 2008-03-06 | Micron Technology, Inc. | Skimmed charge capture and charge packet removal for increased effective pixel photosensor full well capacity |
US7492399B1 (en) * | 2004-02-17 | 2009-02-17 | Raytheon Company | High dynamic range dual mode charge transimpedance amplifier/source follower per detector input circuit |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5083204A (en) * | 1984-10-01 | 1992-01-21 | Hughes Aircraft Company | Signal processor for an imaging sensor system |
-
2009
- 2009-02-24 GB GBGB0903095.8A patent/GB0903095D0/en not_active Ceased
-
2010
- 2010-02-23 CA CA2749808A patent/CA2749808A1/en not_active Abandoned
- 2010-02-23 AU AU2010217623A patent/AU2010217623B2/en not_active Ceased
- 2010-02-23 EP EP10705863.8A patent/EP2401590B1/en active Active
- 2010-02-23 US US13/202,916 patent/US9063012B2/en active Active
- 2010-02-23 WO PCT/EP2010/052289 patent/WO2010097389A1/en active Application Filing
-
2011
- 2011-08-14 IL IL214633A patent/IL214633A0/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004074789A1 (en) * | 2003-02-17 | 2004-09-02 | Raytheon Company | Multi-mode dual integration detector circuit |
US7492399B1 (en) * | 2004-02-17 | 2009-02-17 | Raytheon Company | High dynamic range dual mode charge transimpedance amplifier/source follower per detector input circuit |
WO2008027193A2 (en) * | 2006-08-29 | 2008-03-06 | Micron Technology, Inc. | Skimmed charge capture and charge packet removal for increased effective pixel photosensor full well capacity |
Non-Patent Citations (1)
Title |
---|
AZIZ N Y ET AL: "Standardized high-performance 640*512 readout integrated circuit for infrared applications", INFRARED TECHNOLOGY AND APPLICATIONS XXV 5-9 APRIL 1999 ORLANDO, FL, USA, vol. 3698, 1999, Proceedings of the SPIE - The International Society for Optical Engineering SPIE-Int. Soc. Opt. Eng USA, pages 766 - 777, XP002586354, ISSN: 0277-786X * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3027479A1 (en) * | 2014-10-21 | 2016-04-22 | Commissariat Energie Atomique | PIXEL OF IMAGE SENSOR HAVING MULTIPLE SENSING KNOT GAINS |
EP3013037A1 (en) * | 2014-10-21 | 2016-04-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Pixel of image sensor having multiple detection node gains |
US9736411B2 (en) | 2014-10-21 | 2017-08-15 | Commissariat à l'Eneragie Atomique et aux Energies Alternatives | Image sensor pixel having multiple sensing node gains |
Also Published As
Publication number | Publication date |
---|---|
IL214633A0 (en) | 2011-11-30 |
AU2010217623B2 (en) | 2015-06-18 |
US9063012B2 (en) | 2015-06-23 |
AU2010217623A1 (en) | 2011-09-15 |
EP2401590B1 (en) | 2016-12-07 |
US20110303846A1 (en) | 2011-12-15 |
GB0903095D0 (en) | 2009-10-21 |
CA2749808A1 (en) | 2010-09-02 |
EP2401590A1 (en) | 2012-01-04 |
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