WO2010077082A3 - 발광소자 패키지 및 그 제조방법 - Google Patents

발광소자 패키지 및 그 제조방법 Download PDF

Info

Publication number
WO2010077082A3
WO2010077082A3 PCT/KR2009/007936 KR2009007936W WO2010077082A3 WO 2010077082 A3 WO2010077082 A3 WO 2010077082A3 KR 2009007936 W KR2009007936 W KR 2009007936W WO 2010077082 A3 WO2010077082 A3 WO 2010077082A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting
substrate
producing
device package
Prior art date
Application number
PCT/KR2009/007936
Other languages
English (en)
French (fr)
Other versions
WO2010077082A2 (ko
Inventor
김진하
네이마사미
황석민
전충배
Original Assignee
삼성엘이디 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성엘이디 주식회사 filed Critical 삼성엘이디 주식회사
Priority to CN200980156159XA priority Critical patent/CN102308399A/zh
Priority to EP09836403.7A priority patent/EP2383807A4/en
Priority to US13/142,950 priority patent/US8541801B2/en
Publication of WO2010077082A2 publication Critical patent/WO2010077082A2/ko
Publication of WO2010077082A3 publication Critical patent/WO2010077082A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

본 발명은 발광 효율을 향상시킬 수 있는 발광소자 패키지 및 그 제조방법에 관한 것으로, 본 발명의 일 실시형태에 따른 발광소자 패키지는, 실장면을 갖는 기판; 상기 기판의 실장면에 본딩된 발광소자; 고반사성 물질을 포함하며, 상기 발광소자와 상기 기판 사이의 공간 및 상기 발광소자와 상기 기판 사이의 공간과 연장되도록 상기 발광소자 주위의 기판상에 충진된 광반사 수지부; 및 상기 발광소자 및 상기 광반사 수지부를 덮도록 밀봉된 포장 수지부;를 포함한다. 또한, 본 발명은 상기 발광소자 패키지의 제조방법을 제공한다.
PCT/KR2009/007936 2008-12-30 2009-12-30 발광소자 패키지 및 그 제조방법 WO2010077082A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200980156159XA CN102308399A (zh) 2008-12-30 2009-12-30 发光器件封装件及其制造方法
EP09836403.7A EP2383807A4 (en) 2008-12-30 2009-12-30 LIGHT EMITTING DEVICE ENVELOPE AND METHOD FOR PRODUCING SAME
US13/142,950 US8541801B2 (en) 2008-12-30 2009-12-30 Light-emitting-device package and a method for producing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20080136954 2008-12-30
KR10-2008-0136954 2008-12-30
KR10-2009-0132239 2009-12-28
KR1020090132239A KR20100080423A (ko) 2008-12-30 2009-12-28 발광소자 패키지 및 그 제조방법

Publications (2)

Publication Number Publication Date
WO2010077082A2 WO2010077082A2 (ko) 2010-07-08
WO2010077082A3 true WO2010077082A3 (ko) 2010-10-21

Family

ID=42641313

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/007936 WO2010077082A2 (ko) 2008-12-30 2009-12-30 발광소자 패키지 및 그 제조방법

Country Status (6)

Country Link
US (1) US8541801B2 (ko)
EP (1) EP2383807A4 (ko)
KR (1) KR20100080423A (ko)
CN (1) CN102308399A (ko)
TW (1) TWI394301B (ko)
WO (1) WO2010077082A2 (ko)

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8431423B2 (en) * 2009-07-16 2013-04-30 Koninklijke Philips Electronics N.V. Reflective substrate for LEDS
US9219206B2 (en) * 2010-01-19 2015-12-22 Lg Innotek Co., Ltd. Package and manufacturing method of the same
JP5582048B2 (ja) * 2011-01-28 2014-09-03 日亜化学工業株式会社 発光装置
JP5763365B2 (ja) * 2011-02-24 2015-08-12 日東電工株式会社 発光ダイオード素子および発光ダイオード装置
JP5745319B2 (ja) 2011-04-14 2015-07-08 日東電工株式会社 蛍光反射シート、および、発光ダイオード装置の製造方法
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
JP5817297B2 (ja) * 2011-06-03 2015-11-18 東芝ライテック株式会社 発光装置及び照明装置
WO2013011628A1 (ja) * 2011-07-19 2013-01-24 パナソニック株式会社 発光装置及びその製造方法
KR101939333B1 (ko) * 2011-10-07 2019-01-16 서울바이오시스 주식회사 발광 다이오드 패키지
JP6038443B2 (ja) * 2011-11-21 2016-12-07 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
US9093621B2 (en) * 2011-12-28 2015-07-28 Nichia Corporation Molded package for light emitting device
TWI606618B (zh) * 2012-01-03 2017-11-21 Ｌｇ伊諾特股份有限公司 發光裝置
CN104205365B (zh) 2012-03-19 2020-06-16 亮锐控股有限公司 磷光体施加前后发光器件的单个化
KR20130109759A (ko) * 2012-03-28 2013-10-08 삼성전자주식회사 발광소자 패키지
KR101803039B1 (ko) * 2012-05-22 2017-11-29 나노코 테크놀로지스 리미티드 고 반사 물질을 이용한 양자 수율 향상
CN103427005B (zh) * 2012-05-23 2016-05-18 台达电子工业股份有限公司 发光半导体元件及其制作方法以及光源模块
JP6094062B2 (ja) * 2012-06-01 2017-03-15 日亜化学工業株式会社 発光装置及びその製造方法
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
JP5609925B2 (ja) 2012-07-09 2014-10-22 日亜化学工業株式会社 発光装置
JP5962285B2 (ja) * 2012-07-19 2016-08-03 日亜化学工業株式会社 発光装置およびその製造方法
JP5995579B2 (ja) * 2012-07-24 2016-09-21 シチズンホールディングス株式会社 半導体発光装置及びその製造方法
JP6099901B2 (ja) * 2012-08-23 2017-03-22 スタンレー電気株式会社 発光装置
KR101958419B1 (ko) 2013-01-29 2019-03-14 삼성전자 주식회사 반도체 발광 소자
US9425359B2 (en) 2013-02-04 2016-08-23 Industrial Technology Research Institute Light emitting diode
US9548424B2 (en) 2013-02-04 2017-01-17 Industrial Technology Research Institute Light emitting diode
TWI557942B (zh) * 2013-02-04 2016-11-11 財團法人工業技術研究院 發光二極體
US20140362603A1 (en) 2013-05-09 2014-12-11 Seoul Semiconductor Co., Ltd. Light source module and backlight unit having the same
WO2015005655A1 (ko) * 2013-07-09 2015-01-15 피에스아이 주식회사 초소형 led 전극어셈블리 및 이의 제조방법
TWI540766B (zh) * 2013-07-10 2016-07-01 隆達電子股份有限公司 發光二極體封裝結構
KR102123039B1 (ko) 2013-07-19 2020-06-15 니치아 카가쿠 고교 가부시키가이샤 발광 장치 및 그 제조 방법
US9673364B2 (en) 2013-07-19 2017-06-06 Nichia Corporation Light emitting device and method of manufacturing the same
JP2015028997A (ja) * 2013-07-30 2015-02-12 日亜化学工業株式会社 発光装置及びその製造方法
KR20150025231A (ko) * 2013-08-28 2015-03-10 서울반도체 주식회사 광원 모듈 및 그 제조 방법, 및 백라이트 유닛
TW201511347A (zh) * 2013-09-10 2015-03-16 Lingsen Precision Ind Ltd 發光二極體封裝結構及其製造方法
CN104425681A (zh) * 2013-09-10 2015-03-18 菱生精密工业股份有限公司 发光二极管封装结构及其制造方法
DE102013110114A1 (de) * 2013-09-13 2015-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
EP2854186A1 (en) * 2013-09-26 2015-04-01 Seoul Semiconductor Co., Ltd. Light source module, fabrication method therefor, and backlight unit including the same
JP6344190B2 (ja) * 2013-10-11 2018-06-20 住友大阪セメント株式会社 光半導体発光装置、照明器具、表示装置、及び光半導体発光装置の製造方法
JP2015106641A (ja) * 2013-11-29 2015-06-08 日亜化学工業株式会社 発光装置
CN103700635B (zh) * 2013-12-25 2017-01-18 北京必创科技有限公司 一种带腔体的芯片封装结构及其封装方法
US9954144B2 (en) 2014-01-10 2018-04-24 Cree, Inc. Wafer level contact pad solder bumping for surface mount devices with non-planar recessed contacting surfaces
US20150200336A1 (en) * 2014-01-10 2015-07-16 Cree, Inc. Wafer level contact pad standoffs with integrated reflector
JP6250429B2 (ja) * 2014-02-13 2017-12-20 エスアイアイ・セミコンダクタ株式会社 半導体装置およびその製造方法
JP6432416B2 (ja) 2014-04-14 2018-12-05 日亜化学工業株式会社 半導体装置
JP7148826B2 (ja) * 2014-05-21 2022-10-06 日亜化学工業株式会社 発光装置
JP6398323B2 (ja) * 2014-05-25 2018-10-03 日亜化学工業株式会社 半導体発光素子の製造方法
KR101638125B1 (ko) * 2014-10-23 2016-07-11 주식회사 세미콘라이트 반도체 발광소자 및 이의 제조 방법
US10411176B2 (en) 2014-09-12 2019-09-10 Semicon Light Co., Ltd. Method for manufacturing semiconductor light-emitting device
KR101638124B1 (ko) * 2014-10-23 2016-07-11 주식회사 세미콘라이트 반도체 발광소자 및 이의 제조 방법
KR102263065B1 (ko) * 2014-09-26 2021-06-10 서울바이오시스 주식회사 발광 소자 및 그 제조 방법
CN107078199B (zh) * 2014-09-26 2019-11-08 首尔伟傲世有限公司 发光器件及其制造方法
KR20160065349A (ko) * 2014-11-28 2016-06-09 일진엘이디(주) 질화물 반도체 발광 칩 및 이를 갖는 발광 소자
JP6755090B2 (ja) * 2014-12-11 2020-09-16 シチズン電子株式会社 発光装置及び発光装置の製造方法
CN105789418A (zh) * 2014-12-18 2016-07-20 惠州市华瑞光源科技有限公司 胶状物及发光二极管封装结构
TWI677113B (zh) 2014-12-24 2019-11-11 晶元光電股份有限公司 發光元件以及其製造方法
JP2015073140A (ja) * 2015-01-20 2015-04-16 日東電工株式会社 発光ダイオード装置
KR101663128B1 (ko) * 2015-02-24 2016-10-10 주식회사 세미콘라이트 반도체 발광소자, 및 이의 제조방법
KR101694374B1 (ko) * 2015-02-24 2017-01-24 주식회사 세미콘라이트 반도체 발광소자, 이의 제조방법, 및 이를 가지는 광원모듈
CN104716252B (zh) * 2015-03-17 2017-07-21 深圳市华星光电技术有限公司 发光装置及背光模组
TWI657597B (zh) * 2015-03-18 2019-04-21 新世紀光電股份有限公司 側照式發光二極體結構及其製造方法
JP2017034218A (ja) * 2015-08-03 2017-02-09 株式会社東芝 半導体発光装置
CN106449947A (zh) * 2015-08-11 2017-02-22 台达电子工业股份有限公司 波长转换装置
WO2017061955A1 (en) * 2015-10-07 2017-04-13 Heptagon Micro Optics Pte. Ltd. Molded circuit substrates
KR102487685B1 (ko) * 2015-11-10 2023-01-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 조명 장치
JP6269702B2 (ja) * 2015-11-30 2018-01-31 日亜化学工業株式会社 発光装置の製造方法
JP6314968B2 (ja) * 2015-12-25 2018-04-25 日亜化学工業株式会社 発光装置
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
CN105895781A (zh) * 2016-06-02 2016-08-24 深圳市晶瓷光电有限公司 一种蓝光led倒装芯片的封装结构和封装方法
WO2017223255A1 (en) * 2016-06-21 2017-12-28 Soraa, Inc. Light emitting diode package
JP6724634B2 (ja) * 2016-07-28 2020-07-15 日亜化学工業株式会社 発光装置の製造方法
DE102016113969A1 (de) * 2016-07-28 2018-02-01 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterchips, strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements
WO2018056788A1 (ko) * 2016-09-26 2018-03-29 주식회사 세미콘라이트 반도체 발광소자 및 이의 제조 방법
JP6720814B2 (ja) * 2016-09-30 2020-07-08 日亜化学工業株式会社 発光装置
JP7053980B2 (ja) * 2016-11-16 2022-04-13 日亜化学工業株式会社 発光装置
CN106932951B (zh) * 2017-04-14 2018-11-23 深圳市华星光电技术有限公司 Led灯源及其制造方法、背光模组
US10153416B1 (en) * 2017-05-23 2018-12-11 Radiant Choice Limited Package body and light emitting device using same
JP7037030B2 (ja) * 2017-07-31 2022-03-16 日亜化学工業株式会社 発光装置の製造方法
JP7290001B2 (ja) * 2017-08-03 2023-06-13 クリーエルイーディー・インコーポレーテッド 高密度ピクセル化ｌｅｄチップ、チップアレイデバイス、及びその製造方法
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
WO2019059690A2 (ko) * 2017-09-22 2019-03-28 엘지이노텍 주식회사 발광소자 패키지
KR20190060350A (ko) * 2017-11-24 2019-06-03 주식회사 루멘스 엘이디 패키지 및 그 제조방법
US10193042B1 (en) * 2017-12-27 2019-01-29 Innolux Corporation Display device
CN110491987A (zh) * 2018-05-14 2019-11-22 晶元光电股份有限公司 一种发光装置及其制造方法
CN108807303B (zh) * 2018-05-17 2020-07-24 江苏如高第三代半导体产业研究院有限公司 一种单面出光的晶圆级芯片级csp封装结构及其制备方法
JP6852745B2 (ja) * 2018-06-29 2021-03-31 日亜化学工業株式会社 発光装置の製造方法および発光装置
WO2020003789A1 (ja) 2018-06-29 2020-01-02 日亜化学工業株式会社 発光装置の製造方法および発光装置
CN108695421A (zh) * 2018-07-04 2018-10-23 天津中环电子照明科技有限公司 反射隔热式量子点led封装器件及灯具
KR102683372B1 (ko) 2018-10-24 2024-07-10 엘지이노텍 주식회사 조명 모듈 및 이를 구비한 조명 장치
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
JP6784287B2 (ja) * 2018-12-27 2020-11-11 日亜化学工業株式会社 発光装置及びその製造方法
TWI690102B (zh) * 2019-01-04 2020-04-01 友達光電股份有限公司 發光裝置及其製造方法
KR102244386B1 (ko) * 2019-05-10 2021-05-07 주식회사 라이트전자 발광소자 패키지
EP4052296A1 (en) 2019-10-29 2022-09-07 Creeled, Inc. Texturing for high density pixelated-led chips
CN113424249B (zh) * 2019-11-12 2024-01-23 京东方科技集团股份有限公司 背板、显示基板和显示装置
JP7057526B2 (ja) * 2020-08-26 2022-04-20 日亜化学工業株式会社 発光モジュール
US11444225B2 (en) * 2020-09-08 2022-09-13 Dominant Opto Technologies Sdn Bhd Light emitting diode package having a protective coating
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods
CN112331753B (zh) * 2020-11-06 2022-11-11 业成科技（成都）有限公司 发光二极管结构
TWI744139B (zh) 2020-12-16 2021-10-21 隆達電子股份有限公司 二極體封裝結構及其製造方法
WO2022203452A1 (ko) * 2021-03-25 2022-09-29 서울바이오시스 주식회사 발광 다이오드 패키지

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002374007A (ja) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd 発光装置
JP2005317881A (ja) * 2004-04-30 2005-11-10 Citizen Electronics Co Ltd 発光ダイオード
KR20070069669A (ko) * 2005-12-28 2007-07-03 (주)석경에이.티 발광다이오드의 봉지제

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3685018B2 (ja) * 2000-05-09 2005-08-17 日亜化学工業株式会社 発光素子とその製造方法
US6531328B1 (en) 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
CN1194424C (zh) 2001-11-28 2005-03-23 国联光电科技股份有限公司 具有透明基板倒装式发光二极管芯片的高亮度发光二极体
WO2005062905A2 (en) 2003-12-24 2005-07-14 Gelcore Llc Laser lift-off of sapphire from a nitride flip-chip
CN100454596C (zh) * 2004-04-19 2009-01-21 松下电器产业株式会社 Led照明光源的制造方法及led照明光源
JP2006156837A (ja) * 2004-11-30 2006-06-15 Matsushita Electric Ind Co Ltd 半導体発光装置、発光モジュール、および照明装置
CN101288342B (zh) * 2005-04-20 2010-05-19 皇家飞利浦电子股份有限公司 包括陶瓷发光转换器的照明系统
CN2888653Y (zh) 2005-10-24 2007-04-11 厦门华联电子有限公司 功率型发光二极管的改进机构
KR20070063976A (ko) * 2005-12-16 2007-06-20 서울옵토디바이스주식회사 플립칩 구조의 발광 소자 및 이의 제조 방법
JP2008060344A (ja) * 2006-08-31 2008-03-13 Toshiba Corp 半導体発光装置
KR100757826B1 (ko) 2006-09-29 2007-09-11 서울반도체 주식회사 측면 발광 다이오드 패키지
TWI338380B (en) * 2006-10-11 2011-03-01 Chuan Yu Hung Light emitting diode incorporating high refractive index material
JP2008143981A (ja) 2006-12-07 2008-06-26 Three M Innovative Properties Co 光反射性樹脂組成物、発光装置及び光学表示装置
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002374007A (ja) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd 発光装置
JP2005317881A (ja) * 2004-04-30 2005-11-10 Citizen Electronics Co Ltd 発光ダイオード
KR20070069669A (ko) * 2005-12-28 2007-07-03 (주)석경에이.티 발광다이오드의 봉지제

Also Published As

Publication number Publication date
TW201106504A (en) 2011-02-16
US20110291143A1 (en) 2011-12-01
CN102308399A (zh) 2012-01-04
TWI394301B (zh) 2013-04-21
KR20100080423A (ko) 2010-07-08
EP2383807A2 (en) 2011-11-02
US8541801B2 (en) 2013-09-24
WO2010077082A2 (ko) 2010-07-08
EP2383807A4 (en) 2014-06-18

Similar Documents

Publication Publication Date Title
WO2010077082A3 (ko) 발광소자 패키지 및 그 제조방법
WO2010039014A3 (ko) 액정고분자를 이용한 발광다이오드 패키지
WO2012026757A3 (ko) 형광체 필름, 이의 제조방법, 형광층 도포 방법, 발광소자 패키지의 제조방법 및 발광소자 패키지
WO2009008636A3 (en) Light emitting device package
WO2011037938A3 (en) A method for encapsulation of organic electronic devices
WO2009142391A3 (ko) 발광소자 패키지 및 그 제조방법
TWI256737B (en) One-block light-emitting device and manufacturing method thereof
EP2466657A3 (en) LED package
WO2010071386A3 (ko) 발광소자 패키지, 백라이트 유닛, 디스플레이 장치 및 조명장치
WO2010100577A3 (en) Method of bonding a semiconductor device using a compliant bonding structure
EP2355195A3 (en) Semiconductor light-emitting device, its encapsulation sheet and method for producing said device
EP1743868A3 (en) Sealed semiconductor device with an inorganic bonding layer and method for manufacturing the semiconductor device
EP1976000A3 (en) Method for manufacturing semiconductor device
MY166515A (en) Phosphor-containing sheet, led light emitting device using the same, and method for manufacturing led
TW200739969A (en) Light emitting diode package
TW200733788A (en) Organic light-emitting display device with frit seal and reinforcing structure bonded to frame
EP2372796A3 (en) Light emitting diode package and light unit having the same
TW200730007A (en) Organic light-emitting display device and manufacturing method of the same
EP2466658A3 (en) LED including a phosphor layer, LED package and methods of manufacturing the same
TW200737551A (en) Semiconductor device and method for manufacturing the same
WO2010110587A3 (ko) 태양전지 모듈의 제조방법 및 그에 따라 제조된 태양전지 모듈
WO2009116744A3 (ko) 발광다이오드 리드프레임과 그 리드프레임을 이용한 발광다이오드 패키지 및 그 제조방법
TW200730008A (en) Organic light-emitting display and method of making the same
WO2006132795A3 (en) A light-emitting device module with a substrate and methods of forming it
WO2011078506A3 (en) Light emitting diode package and method for fabricating the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980156159.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09836403

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 13142950

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2009836403

Country of ref document: EP