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WO2010068625A3 - Shaped anode and anode-shield connection for vacuum physical vapor deposition - Google Patents

Shaped anode and anode-shield connection for vacuum physical vapor deposition

Info

Publication number
WO2010068625A3
WO2010068625A3 PCT/US2009/067147 US2009067147W WO2010068625A3 WO 2010068625 A3 WO2010068625 A3 WO 2010068625A3 US 2009067147 W US2009067147 W US 2009067147W WO 2010068625 A3 WO2010068625 A3 WO 2010068625A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
vacuum
anode
chamber
cathode
annular
Prior art date
Application number
PCT/US2009/067147
Other languages
French (fr)
Other versions
WO2010068625A2 (en )
Inventor
Youming Li
Jeffrey Birkmeyer
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • H01J37/3408Planar magnetron sputtering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3438Electrodes other than cathode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3447Collimators, shutters, apertures

Abstract

A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, a shield, and an anode. The cathode is inside the vacuum chamber, and the cathode is configured to include a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The anode includes an annular body and an annular flange projecting inwardly from the annular body, and the annular flange is positioned to define a volume below the target for the generation of plasma.
PCT/US2009/067147 2008-12-12 2009-12-08 Shaped anode and anode-shield connection for vacuum physical vapor deposition WO2010068625A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/334,253 2008-12-12
US12334253 US8066857B2 (en) 2008-12-12 2008-12-12 Shaped anode and anode-shield connection for vacuum physical vapor deposition

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN 200980149159 CN102246271B (en) 2008-12-12 2009-12-08 Shaped anode and anode-shield connection for vacuum physical vapor deposition
JP2011540827A JP5421388B2 (en) 2008-12-12 2009-12-08 Forming an anode of an anode for a vacuum physical vapor deposition - shield connection
KR20117014639A KR101256856B1 (en) 2008-12-12 2009-12-08 Shaped anode and anode-shield connection for vacuum physical vapor deposition

Publications (2)

Publication Number Publication Date
WO2010068625A2 true WO2010068625A2 (en) 2010-06-17
WO2010068625A3 true true WO2010068625A3 (en) 2010-09-10

Family

ID=42239224

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/067147 WO2010068625A3 (en) 2008-12-12 2009-12-08 Shaped anode and anode-shield connection for vacuum physical vapor deposition

Country Status (5)

Country Link
US (1) US8066857B2 (en)
JP (1) JP5421388B2 (en)
KR (1) KR101256856B1 (en)
CN (1) CN102246271B (en)
WO (1) WO2010068625A3 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4320082A (en) 1977-09-12 1982-03-16 Houle Elmer Richard Molding of rotary mower safety blade
JP4142706B2 (en) * 2006-09-28 2008-09-03 富士フイルム株式会社 Deposition apparatus, a film forming method, an insulating film, a dielectric film, a piezoelectric film, a ferroelectric film, a piezoelectric element and a liquid discharge apparatus
US8043487B2 (en) * 2008-12-12 2011-10-25 Fujifilm Corporation Chamber shield for vacuum physical vapor deposition
US20100206713A1 (en) * 2009-02-19 2010-08-19 Fujifilm Corporation PZT Depositing Using Vapor Deposition
US8540851B2 (en) * 2009-02-19 2013-09-24 Fujifilm Corporation Physical vapor deposition with impedance matching network
US8557088B2 (en) * 2009-02-19 2013-10-15 Fujifilm Corporation Physical vapor deposition with phase shift
US9181619B2 (en) * 2010-02-26 2015-11-10 Fujifilm Corporation Physical vapor deposition with heat diffuser
US8133362B2 (en) * 2010-02-26 2012-03-13 Fujifilm Corporation Physical vapor deposition with multi-point clamp
JP5843602B2 (en) * 2011-12-22 2016-01-13 キヤノンアネルバ株式会社 The plasma processing apparatus
US9340866B2 (en) * 2012-03-30 2016-05-17 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9404176B2 (en) 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
EP3250729A1 (en) * 2015-03-18 2017-12-06 Vision Ease LP Anode shield

Citations (3)

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JPH05263237A (en) * 1992-03-19 1993-10-12 Dainippon Printing Co Ltd Production of transparent electrode film
KR100517474B1 (en) * 1996-07-10 2005-12-07 어플라이드 머티어리얼스, 인코포레이티드 Eseoui electrically floating shield reactor
JP2007042818A (en) * 2005-08-02 2007-02-15 Fujitsu Ltd Depositing apparatus and method

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US4622122A (en) 1986-02-24 1986-11-11 Oerlikon Buhrle U.S.A. Inc. Planar magnetron cathode target assembly
US5234561A (en) 1988-08-25 1993-08-10 Hauzer Industries Bv Physical vapor deposition dual coating process
US5202008A (en) 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
CN2195551Y (en) 1994-08-15 1995-04-26 核工业西南物理研究院 Multi-function omnibearing reinforcing gravity pouring ion-filling machine
JPH08277461A (en) * 1995-04-06 1996-10-22 Ulvac Japan Ltd Sputtering device and formation of dielectric film
US6132550A (en) 1995-08-11 2000-10-17 Sumitomo Electric Industries, Ltd. Apparatuses for desposition or etching
US5736021A (en) 1996-07-10 1998-04-07 Applied Materials, Inc. Electrically floating shield in a plasma reactor
JPH10140343A (en) * 1996-11-01 1998-05-26 Applied Materials Inc Sputtering system
JPH11302838A (en) * 1998-03-27 1999-11-02 Applied Materials Inc Sputtering system
US6227140B1 (en) 1999-09-23 2001-05-08 Lam Research Corporation Semiconductor processing equipment having radiant heated ceramic liner
US6451177B1 (en) * 2000-01-21 2002-09-17 Applied Materials, Inc. Vault shaped target and magnetron operable in two sputtering modes
EP1258026B1 (en) 2000-02-23 2016-12-28 Evatec AG Method for controlling plasma density or the distribution thereof in a magnetron sputter source and magnetron sputter source
US6358376B1 (en) * 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
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JP2003209068A (en) * 2002-01-11 2003-07-25 Hitachi Ltd Manufacturing method for semiconductor device
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05263237A (en) * 1992-03-19 1993-10-12 Dainippon Printing Co Ltd Production of transparent electrode film
KR100517474B1 (en) * 1996-07-10 2005-12-07 어플라이드 머티어리얼스, 인코포레이티드 Eseoui electrically floating shield reactor
JP2007042818A (en) * 2005-08-02 2007-02-15 Fujitsu Ltd Depositing apparatus and method

Also Published As

Publication number Publication date Type
JP2012512325A (en) 2012-05-31 application
US8066857B2 (en) 2011-11-29 grant
KR101256856B1 (en) 2013-04-22 grant
WO2010068625A2 (en) 2010-06-17 application
CN102246271B (en) 2013-08-07 grant
JP5421388B2 (en) 2014-02-19 grant
KR20110099118A (en) 2011-09-06 application
CN102246271A (en) 2011-11-16 application
US20100147680A1 (en) 2010-06-17 application

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