WO2010019007A3 - Vapor deposition reactor for forming thin film - Google Patents

Vapor deposition reactor for forming thin film Download PDF

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Publication number
WO2010019007A3
WO2010019007A3 PCT/KR2009/004528 KR2009004528W WO2010019007A3 WO 2010019007 A3 WO2010019007 A3 WO 2010019007A3 KR 2009004528 W KR2009004528 W KR 2009004528W WO 2010019007 A3 WO2010019007 A3 WO 2010019007A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
reaction module
chamber
thin film
vapor deposition
Prior art date
Application number
PCT/KR2009/004528
Other languages
French (fr)
Other versions
WO2010019007A2 (en
Inventor
Sang In Lee
Original Assignee
Synos Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090074143A external-priority patent/KR101099191B1/en
Application filed by Synos Technology, Inc. filed Critical Synos Technology, Inc.
Publication of WO2010019007A2 publication Critical patent/WO2010019007A2/en
Publication of WO2010019007A3 publication Critical patent/WO2010019007A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Abstract

A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.
PCT/KR2009/004528 2008-08-13 2009-08-13 Vapor deposition reactor for forming thin film WO2010019007A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2008-0079500 2008-08-13
KR20080079500 2008-08-13
KR10-2009-0074143 2009-08-12
KR1020090074143A KR101099191B1 (en) 2008-08-13 2009-08-12 Vapor deposition reactor and method for forming thin film using the same

Publications (2)

Publication Number Publication Date
WO2010019007A2 WO2010019007A2 (en) 2010-02-18
WO2010019007A3 true WO2010019007A3 (en) 2010-04-15

Family

ID=41669496

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/004528 WO2010019007A2 (en) 2008-08-13 2009-08-13 Vapor deposition reactor for forming thin film

Country Status (1)

Country Link
WO (1) WO2010019007A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8143147B1 (en) * 2011-02-10 2012-03-27 Intermolecular, Inc. Methods and systems for forming thin films
KR101243742B1 (en) * 2011-06-24 2013-03-13 국제엘렉트릭코리아 주식회사 Injection member used in manufacturing semiconductor device and plasma processing apparatus having the same
KR20150029427A (en) 2013-09-10 2015-03-18 삼성디스플레이 주식회사 Vapor deposition apparatus, vapor deposition method and method for manufacturing organic light emitting display apparatus
KR102462931B1 (en) 2015-10-30 2022-11-04 삼성전자주식회사 Gas Supply Unit and Substrate Treating Apparatus
CN115418629B (en) * 2022-08-17 2024-01-12 杭州富芯半导体有限公司 Method for thin film deposition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040025791A (en) * 2002-09-17 2004-03-26 주식회사 무한 ALD equament and ALD methode
KR100558922B1 (en) * 2004-12-16 2006-03-10 (주)퓨전에이드 Apparatus and method for thin film deposition
KR20060117607A (en) * 2005-05-13 2006-11-17 오재응 Vapor deposition reactor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040025791A (en) * 2002-09-17 2004-03-26 주식회사 무한 ALD equament and ALD methode
KR100558922B1 (en) * 2004-12-16 2006-03-10 (주)퓨전에이드 Apparatus and method for thin film deposition
KR20060117607A (en) * 2005-05-13 2006-11-17 오재응 Vapor deposition reactor

Also Published As

Publication number Publication date
WO2010019007A2 (en) 2010-02-18

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