WO2010004903A1 - リードフレームおよびその製造方法 - Google Patents
リードフレームおよびその製造方法 Download PDFInfo
- Publication number
- WO2010004903A1 WO2010004903A1 PCT/JP2009/061888 JP2009061888W WO2010004903A1 WO 2010004903 A1 WO2010004903 A1 WO 2010004903A1 JP 2009061888 W JP2009061888 W JP 2009061888W WO 2010004903 A1 WO2010004903 A1 WO 2010004903A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin
- lead
- dam bar
- leads
- lead frame
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims description 19
- 229920005989 resin Polymers 0.000 claims abstract description 129
- 239000011347 resin Substances 0.000 claims abstract description 129
- 238000007789 sealing Methods 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 29
- 238000000576 coating method Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000013459 approach Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 abstract description 4
- 238000003754 machining Methods 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000011295 pitch Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 241000272168 Laridae Species 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49558—Insulating layers on lead frames, e.g. bridging members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a lead frame that is an assembly member of a resin-encapsulated semiconductor device, a manufacturing method thereof, and a semiconductor device using the lead frame.
- the resin-encapsulated semiconductor device includes a semiconductor element 11 mounted on a die pad 1 of a lead frame, and a front end portion of the inner lead 2 subjected to surface treatment such as silver plating and the semiconductor element 11.
- the terminal 12 is connected with a wire 13 and sealed with a sealing resin 14, and then the outer lead 4 is formed into a gull wing shape.
- the sealing with the sealing resin 14 is performed by sandwiching a lead frame on which a semiconductor element is mounted between a mold (upper) 21 and a mold (lower) 22, and in a gap between both molds. This is done by injecting a sealing resin.
- the lead frame is provided with a dam bar 3 for filling the gap between the leads in the outer lead portion.
- an outer lead, an inner lead, and a dam bar are formed simultaneously by pressing or etching a thin metal plate, and the dam bar is formed of the same metal material as the lead frame. For this reason, after resin sealing, the process of cutting and separating the dam bar by a process such as punching and releasing the electrical short-circuit state is essential.
- Patent Document 1 Japanese Patent No. 2970066
- Patent Document 2 Japanese Patent Laid-Open No. 9-283691
- Patent Document 3 JP-A-11-233704
- the method for forming a resin dam bar proposed in the above patent document is a method of press-fitting between leads (Patent Document 1), applying a thermosetting resin so as to straddle the outer leads, and then heating and pressurizing.
- a method of press-fitting between leads for increasing the number of pins (Patent Document 1).
- a method using a mask Patent Document 3 are too expensive to be practical.
- Patent Document 2 when resin is applied to the surface of the lead frame so as to straddle the outer leads (Patent Document 2), the resin remains on the front and back surfaces of the lead frame and is closed by being sandwiched between molds to be sealed with a sealing resin. Sometimes the lead frame is deformed, or a gap is formed between the mold and the lead frame, causing resin leakage.
- An object of the present invention is to provide a lead frame and a semiconductor device that can omit the removing step at low cost.
- the first of the present invention has a plurality of outer leads, a plurality of inner leads, and a lead frame having a dam bar made of an insulating resin at the boundary between the outer leads and the inner leads.
- the insulating resin is a thermosetting resin or an ultraviolet curable resin that can be moved between inner leads along the side wall of the lead before curing is completed, The inner lead interval is getting closer to the dam bar in the vicinity of the dam bar,
- the lead frame is characterized in that the outer lead interval is wider in the vicinity of the dam bar than the lead interval at the position of the dam bar.
- a second aspect of the present invention is a semiconductor device in which a semiconductor element is mounted on the lead frame of the first aspect, the inner lead and the terminal of the semiconductor element are connected, and sealed with a sealing resin.
- the semiconductor device is characterized in that the insulating resin dam bar is on a boundary line (mold sealing line) between a portion where the sealing resin is formed and a portion where the sealing resin is not formed.
- the third of the present invention has a plurality of outer leads and a plurality of inner leads, and forms a dam bar free lead frame without a dam bar by processing a metal thin plate, Apply an insulating thermosetting resin or UV curable resin liquid to the front or back surface of the lead frame in the inner lead area, The coating resin liquid that has flowed into the gap between the leads moves along the lead side wall toward the boundary between the outer lead and the inner lead, Then, the resin for coating is cured to form a resin dam bar on the mold sealing line.
- the moving method of the coating resin liquid is narrowed as the inner lead interval approaches the boundary direction between the outer lead and the inner lead, so that the resin liquid moves along the lead side wall in the boundary direction, It is preferable that the movement of the coating resin liquid is stopped by widening the outer lead interval outside the coating resin liquid movement stop position.
- the dam bar is made of an insulating resin, it is not necessary to cut and remove the dam bar after sealing the semiconductor device with the sealing resin.
- the resin dam bar is formed by a coating method, the cost is low.
- a dam bar is formed by applying a resin liquid to the inner lead area, moving to the boundary between the inner lead and the outer lead through the side wall between the leads, and then curing the dam bar. Resin does not remain, and the lead frame is not deformed or has a gap when it is closed with a mold for sealing, so that resin leakage does not occur.
- the inner lead interval is narrower toward the dam bar position, that is, the boundary position between the inner lead and the outer lead, and the shape of the inner lead interval is a trapezoid when viewed from the lead frame surface. For this reason, the shape of the resin of the dam bar is trapezoidal, and even if the resin of the dam bar shrinks slightly during curing, the resin dam bar can be prevented from slipping out due to the pressure when the sealing resin is pressed.
- the center position of the resin dam bar is slightly lower than the height position of the front and back surfaces of the lead frame, and the mold at the time of sealing It is also possible to create a slight gap between the dam bar and the resin dam bar that also serves as a vent for the gas generated from the sealing resin.
- the sealing resin since a part of the dam bar is covered with the sealing resin, it is possible to prevent the resin dam bar from peeling off or dropping off.
- FIG. 1 shows an overview of the lead frame of the present invention.
- an insulating resin dam bar 33 is provided at the position of the mold sealing line 34 between the inner lead 2 and the outer lead 4.
- FIG. 2 shows an enlarged view near the boundary between the outer lead and the inner lead of the dam bar-free lead frame used in the present invention.
- the lead frame has a thickness of 0.1 to 0.2 mm, preferably 0.1 to 0.15 mm.
- the outer lead pitch is usually 0.5 mm, and the outer lead interval is usually 0.2 to 0.3 mm.
- the ratio (taper) in which the lead interval is narrowed is preferably 5 to 60 ⁇ m, more preferably 10 to 50 ⁇ m, still more preferably 10 to 40 ⁇ m per 1000 ⁇ m (1 mm) length. If the taper is too small, the amount of movement of the dam bar forming resin coating solution is undesirably small. Further, the interval between the outer leads is wider than the interval between the leads at the boundary.
- the lead surface at the tip of the inner lead of the lead frame is generally plated with silver or gold by means such as spot plating or ring plating so as to facilitate wire bonding.
- a method for forming a dam bar will be described.
- a resin liquid for forming a dam bar is applied to the inner lead area on the coating line 31 (FIG. 3a)
- the applied resin liquid 32 enters between the leads due to surface tension (FIG. 3b), and the resin liquid 32 further reaches the side wall of the lead due to the surface tension. Then, it moves in the direction where the lead interval is narrow, that is, in the boundary direction (FIG. 3c), and stops when the lead interval becomes wide (FIG. 3d).
- the resin dam bar is formed by completing the curing of the resin at this stop position. Further, the applied resin liquid can be lowered in viscosity by raising the temperature, and can be easily moved to the stop position.
- the resin for forming the dam bar is a thermosetting resin or an ultraviolet curable resin, preferably a thermosetting resin.
- the thermosetting resin include an acrylic thermosetting resin, a polyimide thermosetting resin, a polyamideimide thermosetting resin, and an epoxy thermosetting resin, and among these, an epoxy resin thermosetting resin.
- a one-pack type epoxy resin thermosetting resin composed of an epoxy resin and a latent curing agent is preferable.
- the viscosity at the time of application of the resin liquid is preferably 4 Pa ⁇ s or more and 60 Pa ⁇ s or less. If the viscosity of the resin liquid is too high, the coating speed becomes slow and the movement of the resin liquid becomes difficult, which is not preferable.
- a dispenser method is preferable, and a dispenser method using a screw type dispenser is particularly preferable because the amount of coating liquid can be easily adjusted.
- thermosetting resin As the resin curing method, an ordinary method corresponding to the resin is used.
- a one-pack type epoxy resin thermosetting resin is used, it can be cured and fixed by heating at 170 to 200 ° C. for 15 seconds to 2 minutes.
- the heating for making it easy to move to a stop position and the heating for making it heat up to hardening reaction temperature can be combined. Specifically, it is efficient to start heating before moving to the movement stop position (FIG. 3c), and promote the movement to reach the curing reaction temperature when it reaches the stop position (FIG. 3d). It is.
- FIG. 4 shows an example of the relationship between the taper and the resin movement amount when a dam bar forming resin liquid having a viscosity of about 20 Pa ⁇ s is applied to a lead frame having a lead pitch interval of 120 ⁇ m. It is a graph. In the graph of FIG. 4, the vertical axis indicates the amount of movement of the resin liquid, and the horizontal axis indicates the ratio (taper) at which the lead interval per 1000 ⁇ m length becomes narrow. As can be seen from FIG. 4, since there is a positive correlation between the distance of movement of the resin coating solution and the taper, the amount of movement of the resin coating solution can be controlled by controlling the taper of the lead interval. A resin dam bar can be formed at the position.
- the distance from the resin coating line to the dam bar forming position is different between the center portion and the corner portion. . That is, in order to move the resin coating solution so that the dam bar positions are aligned, it is necessary to increase the resin movement amount (Lco) at the corner portion more than the resin movement amount (Lce) at the center portion. In such a case, the movement amount of the resin coating liquid may be controlled by making the taper (Tco) of the corner portion larger than the taper (Tce) of the center portion.
- the semiconductor element is mounted at a predetermined position of the lead frame manufactured as described above, the inner lead plating portion is connected to the terminal of the semiconductor element, and then the lead frame is mounted as shown in FIG. It is manufactured by injecting a sealing resin into the mold and solidifying it so as to be sandwiched between the sealing mold (upper mold) 21 and the sealing mold (lower mold) 22.
- the sealing resin may be any resin as long as it is used as a sealing resin for a semiconductor device. Examples thereof include a resin composition made of an epoxy resin and an inorganic filler such as alumina or silica.
- the mold sealing line 34 is on the dam bar 33 and a part of the dam bar is covered with the sealing resin. By covering a part of the dam bar with the sealing resin, it is possible to prevent the dam bar from peeling off or dropping off.
- the dam bar cutting and removing step after resin sealing can be omitted, a resin-encapsulated semiconductor device having a large number of pins and a narrow pitch can be manufactured at low cost.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
前記絶縁性樹脂が、硬化完了前にはインナーリード間をリード側壁を伝って移動させることが可能である熱硬化樹脂または紫外線硬化樹脂であり、
インナーリード間隔が、ダムバー近傍ではダムバーに近づくにつれて狭くなっており、
かつ、アウターリード間隔が、ダムバー近傍ではダムバーの位置におけるリード間隔より広くなっていることを特徴とするリードフレームである。
インナーリード域のリードフレーム表面又は裏面に絶縁性の熱硬化性樹脂または紫外線硬化樹脂の樹脂液を塗布し、
リード間の隙間に流入した塗布樹脂液を、リード側壁を伝ってアウターリードとインナーリードの境界方向に移動させ、
その後、塗布樹脂を硬化させてモールド封止ライン上に樹脂製ダムバーを形成させることを特徴とするリードフレームの製造方法である。
本発明では、まず、銅合金、ニッケル-鉄合金などの金属薄板をプレス加工またはエッチング加工して、ダムバーを有さないダムバーフリーリードフレームパターンを形成する。図1に本発明のリードフレームの概観図を示す。本発明では、インナーリード2とアウターリード4との間のモールド封止ライン34の位置に、絶縁性樹脂製ダムバー33が設けられている。
2 インナーリード
3 ダムバー
4 アウターリード
11 半導体素子
12 端子
13 ワイヤ
14 封止用樹脂
21 金型(上型)
22 金型(下型)
31 塗布ライン
32 塗布樹脂
33 樹脂製ダムバー
34 モールド封止ライン
Claims (5)
- 複数のアウターリードと、複数のインナーリードを有し、前記アウターリードと前記インナーリードの境界に絶縁性樹脂製のダムバーを有するリードフレームにおいて、
前記絶縁性樹脂が、硬化完了前には前記インナーリード間をリード側壁を伝って移動させることが可能である熱硬化樹脂または紫外線硬化樹脂であり、
インナーリード間隔が、ダムバー近傍ではダムバーに近づくにつれて狭くなっており、
かつ、アウターリード間隔が、ダムバー近傍ではダムバーの位置におけるリード間隔より広くなっていることを特徴とするリードフレーム。 - 請求項1に記載のリードフレーム上に半導体素子を搭載し、前記インナーリードと半導体素子の端子とを結線し、封止用樹脂で封止してなる半導体装置であって、前記絶縁樹脂製ダムバーが、封止用樹脂が形成される部分と形成されない部分の境界線(モールド封止ライン)上にあることを特徴とする半導体装置。
- 複数のアウターリードと、複数のインナーリードとを有し、ダムバーを有さないダムバーフリーリードフレームを金属薄板を加工して形成し、
インナーリード域のリードフレーム表面または裏面に絶縁性の熱硬化性樹脂または紫外線硬化樹脂の樹脂液を塗布し、
リード間の隙間に流入した塗布樹脂液を、リード側壁を伝ってアウターリードとインナーリードの境界方向に移動させ、
その後、塗布樹脂を硬化させてモールド封止ライン上に樹脂製ダムバーを形成させることを特徴とするリードフレームの製造方法。 - インナーリード間隔が、アウターリードとインナーリードの境界に近づくにつれて狭くなっているために、樹脂液が前記境界方向に移動し、
アウターリード間隔が、塗布樹脂液移動停止位置より外側で間隔が広くなっているために、前記塗布樹脂液の移動が停止することを特徴とする請求項3に記載のリードフレームの製造方法。 - インナーリード間隔がアウターリードとインナーリードの境界に近づくにつれて狭くなって行く割合(テーパ)が、リードフレームの各辺の中心付近よりリードフレームの角付近の方が大きいことを特徴とする請求項4に記載のリードフレームの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801241229A CN102077343B (zh) | 2008-07-10 | 2009-06-29 | 一种引线架及其制造方法以及一种半导体装置 |
JP2010519743A JP5693956B2 (ja) | 2008-07-10 | 2009-06-29 | リードフレームおよびその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008180381 | 2008-07-10 | ||
JP2008-180381 | 2008-07-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010004903A1 true WO2010004903A1 (ja) | 2010-01-14 |
Family
ID=41507019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/061888 WO2010004903A1 (ja) | 2008-07-10 | 2009-06-29 | リードフレームおよびその製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5693956B2 (ja) |
KR (1) | KR20110038620A (ja) |
CN (1) | CN102077343B (ja) |
TW (1) | TWI482251B (ja) |
WO (1) | WO2010004903A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017153611A1 (en) | 2016-03-11 | 2017-09-14 | Pom Patentverwaltungs Gbr | Use of alkyd resins |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103050472B (zh) * | 2012-12-28 | 2016-04-20 | 日月光封装测试(上海)有限公司 | 半导体封装用导线架条及其模具与封胶方法 |
JP6327732B1 (ja) * | 2017-06-22 | 2018-05-23 | 大口マテリアル株式会社 | リードフレーム及びその製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008075654A1 (ja) * | 2006-12-18 | 2008-06-26 | Shiima Electronics Inc. | リードフレーム、その製造方法及びそのリードフレームを搭載した半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0750382A (ja) * | 1993-08-05 | 1995-02-21 | Apic Yamada Kk | リードフレーム及びその製造方法並びにこれに用いる成形金型 |
JPH08306850A (ja) * | 1995-04-28 | 1996-11-22 | Hitachi Ltd | 樹脂ダム方式のリードフレーム |
US5949132A (en) * | 1995-05-02 | 1999-09-07 | Texas Instruments Incorporated | Dambarless leadframe for molded component encapsulation |
KR19980015937U (ko) * | 1996-09-13 | 1998-06-25 | 구자홍 | 스피커 커버 체결구조 |
KR19980073905A (ko) * | 1997-03-20 | 1998-11-05 | 이대원 | 합성수지 댐바가 구비된 리드 프레임 및 그 제조방법 |
JP2005135938A (ja) * | 2003-10-28 | 2005-05-26 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2007109749A (ja) * | 2005-10-12 | 2007-04-26 | Shiima Denshi Kk | リードフレーム及び該リードフレームを使用した半導体装置 |
-
2009
- 2009-06-29 JP JP2010519743A patent/JP5693956B2/ja not_active Expired - Fee Related
- 2009-06-29 WO PCT/JP2009/061888 patent/WO2010004903A1/ja active Application Filing
- 2009-06-29 CN CN2009801241229A patent/CN102077343B/zh not_active Expired - Fee Related
- 2009-06-29 KR KR1020107027954A patent/KR20110038620A/ko active IP Right Grant
- 2009-07-09 TW TW098123215A patent/TWI482251B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008075654A1 (ja) * | 2006-12-18 | 2008-06-26 | Shiima Electronics Inc. | リードフレーム、その製造方法及びそのリードフレームを搭載した半導体装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017153611A1 (en) | 2016-03-11 | 2017-09-14 | Pom Patentverwaltungs Gbr | Use of alkyd resins |
EP3708623A1 (en) | 2016-03-11 | 2020-09-16 | POM Patentverwaltungs GbR | Use of alkyd resins |
EP4047063A1 (en) | 2016-03-11 | 2022-08-24 | Dr. Klaus Schepers Patentverwaltung | Use of alkyd resins |
EP4083151A1 (en) | 2016-03-11 | 2022-11-02 | Dr. Klaus Schepers Patentverwaltung | Use of alkyd resins |
Also Published As
Publication number | Publication date |
---|---|
TWI482251B (zh) | 2015-04-21 |
TW201021185A (en) | 2010-06-01 |
KR20110038620A (ko) | 2011-04-14 |
CN102077343A (zh) | 2011-05-25 |
CN102077343B (zh) | 2013-05-08 |
JP5693956B2 (ja) | 2015-04-01 |
JPWO2010004903A1 (ja) | 2012-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2015151273A1 (ja) | 半導体装置 | |
KR20120021195A (ko) | 수지 밀봉 성형품의 제조 방법 및 수지 밀봉 성형품의 제조 장치 | |
CN108878300B (zh) | 在模制期间具有背面保护层以防止模具溢料失效的封装件 | |
WO2010004903A1 (ja) | リードフレームおよびその製造方法 | |
JP2002329815A (ja) | 半導体装置と、その製造方法、及びその製造装置 | |
JP4039298B2 (ja) | 樹脂封止型半導体装置およびその製造方法ならびに成形型 | |
JP5343939B2 (ja) | 半導体装置の製造方法 | |
JPH0846127A (ja) | 半導体装置の製造方法 | |
JP2006295010A (ja) | モールド成型装置およびモールド成型方法 | |
CN110718471A (zh) | 树脂密封模具和半导体装置的制造方法 | |
JP5332211B2 (ja) | 半導体装置およびその製造方法 | |
JP2006073600A (ja) | 半導体装置およびその製造方法 | |
JP2008235615A (ja) | 配線基板、それを用いた半導体装置およびその製造方法 | |
JP3076949B2 (ja) | リードフレーム | |
JP2006352056A (ja) | パッケージ装置の封止樹脂溢出防止方法 | |
JPWO2020049672A1 (ja) | 半導体装置 | |
JP6332053B2 (ja) | 半導体装置及びその製造方法 | |
JP3047716B2 (ja) | 半導体装置用リードフレーム | |
JP2716001B2 (ja) | 半導体装置の製造方法 | |
JP2017162946A (ja) | リードフレーム集合基板及び半導体装置集合体 | |
JP6171920B2 (ja) | モールドパッケージ | |
JP6554699B2 (ja) | 中空パッケージの製造方法及び中空パッケージ | |
JP2004207759A (ja) | 半導体装置およびその製造方法 | |
KR20230084122A (ko) | 배선 형성 방법 및 전사 형틀의 제조 방법 | |
JP2010232578A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980124122.9 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09794349 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20107027954 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010519743 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09794349 Country of ref document: EP Kind code of ref document: A1 |