Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/40—Optical elements or arrangements
  • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
  • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
  • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
  • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
  • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
  • G01J1/00—Photometry, e.g. photographic exposure meter
  • G01J1/02—Details
  • G01J1/04—Optical or mechanical part supplementary adjustable parts
  • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
  • G01J1/0411—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using focussing or collimating elements, i.e. lenses or mirrors; Aberration correction
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
  • G01J1/00—Photometry, e.g. photographic exposure meter
  • G01J1/02—Details
  • G01J1/04—Optical or mechanical part supplementary adjustable parts
  • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
  • G01J1/0422—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using light concentrators, collectors or condensers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/40—Optical elements or arrangements
  • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
  • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/855—Optical field-shaping means, e.g. lenses
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
  • H10F77/206—Electrodes for devices having potential barriers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
  • H10F77/206—Electrodes for devices having potential barriers
  • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
  • H10F77/215—Geometries of grid contacts
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/83—Electrodes
  • H10H20/831—Electrodes characterised by their shape
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/52—PV systems with concentrators

Definitions

• An optoelectronic device is specified which is particularly suitable for detector systems, energy-generating systems such as solar cells or projectors, for example video projectors.
• Radiation-emitting regions divided active zone and a plurality of convexly curved portions which have a greater lateral extent than the radiation-emitting portions.
• An object to be solved is to specify a low-loss optoelectronic device.
• the optoelectronic device comprises an optical device having an optical structure which has a plurality of optical elements, as well as a radiation-emitting or radiation "P _
• receiving semiconductor chip having a contact structure having a plurality of contact elements for electrically contacting the semiconductor chip and is vertically spaced from the optical structure, wherein the contact elements are arranged in a projection of the contact structure in the plane of the optical structure in the spaces between the optical elements.
• the desired optical effect can be achieved, namely a bundling of the radiation in regions separated by the contact structure from a radiation entrance surface of the radiation-receiving semiconductor chip or a parallel direction of the radiation emitted by these regions through the optical structure.
• the contact structure is applied to a radiation passage area of the semiconductor chip facing the optical device.
• the radiation passage area corresponds to the radiation exit area, while the radiation passage area in the case of the radiation-receiving semiconductor chip represents the radiation entrance area.
• the contact structure covers only partial areas of the radiation passage area of the semiconductor chip, that is to say there is no entire coverage of the radiation passage area due to the contact structure.
• the optical structure is preferably arranged on a radiation passage area of the optical device facing the contact structure.
• the radiation passage area of the optical device corresponds to the radiation entrance area of the optical device, while the radiation passage area in the case of the radiation-receiving semiconductor chip represents the radiation exit area of the optical device.
• the transmitted radiation can be collected in regions of the radiation passage area which are laterally separated from one another, the irradiation intensity between the regions dropping relatively sharply.
• the contact structure is advantageously arranged.
• the intermediate regions of low irradiance correspond in particular to the spaces between the optical elements of the optical structure.
• the contact structure is located outside the main beam path, so that shading by the contact structure is substantially prevented. As a result, radiation losses can be greatly reduced.
• the optical structure advantageously "fades out” the contact structure so that one surface of the optical device is homogeneously illuminated from the perspective of the semiconductor chip and is not interrupted by the contact structure through the optical device or the optical structure are combined to form a uniformly luminous surface.
• the contact structure may be in the form of a structured coating containing an electrically conductive material, in particular a metal, onto which
• Radiation passage surface of the semiconductor chip may be applied.
• the optical structure may be formed of a radiation-transmissive material.
• a suitable material is for example glass. This has relative to short-wave radiation, in particular ultraviolet radiation, a relatively good aging resistance.
• the optical structure advantageously has a periodic structure, that is, the optical elements of the optical structure are arranged regularly.
• the optical elements form a lens array or an optical grating.
• the lens array may comprise a plurality of regularly arranged lenses which have a convexly curved surface on the side facing the semiconductor chip.
• a radiation-emitting or radiation-receiving zone of the semiconductor chip may be located in a plane or near a plane which is spanned by the focal points of the lenses.
• the contact structure may also have a periodic structure.
• the periodicity of the contact structure coincides with the periodicity of the optical structure, that is, the contact elements are arranged with the same regularity as the optical elements.
• the contact structure is formed from net-like arranged contact elements.
• the contact elements may be in particular contact webs.
• the optical structure preferably has the optical elements, for example lenses, at the location of the intermediate spaces of the contact structure.
• the optical device comprises a concentrator.
• the concentrator On a side facing the semiconductor chip, the concentrator has a first aperture which, in particular, is smaller than a second aperture of the concentrator arranged on a side remote from the semiconductor chip.
• the second aperture may advantageously be about 10 to 1000 times larger than the first aperture or the radiation aperture area of the semiconductor chip that preferably corresponds to the first aperture.
• the length of the concentrator is defined by the second or first aperture and the opening angle of the concentrator.
• An advantageous embodiment of the optical device provides a parabolic concentrator.
• the parabolic concentrator is similar in cross section to a piecewise parabola and has the property within a certain angle to focus incident radiation to the axis of symmetry in a limited area or to emit radiation emanating from this area in a limited angular range.
• the optical structure is arranged in the region of the first aperture near the focal point.
• the concentrator as a hollow body with a reflective inner surface, which is arranged downstream of the optical structure on a side facing the semiconductor chip.
• the two elements are preferably two separate elements that are not made of the same material.
• the hollow body may for example be made of a plastic material and on the inner surface of a reflective coating, which in particular contains a metal.
• the optical structure may be formed of glass.
• the semiconductor chip has a radiation-emitting or radiation-receiving zone which is functional in the regions uncovered by the contact structure.
• the radiation-emitting or radiation-receiving zone is also functional in the areas covered by the contact structure, that is to say the size of the functional one Areas preferably equal in total to the total
• Semiconductor chip are vertically spaced from each other, advantageously having a different from the optical structure
• the radiation-emitting semiconductor chip is a light-emitting diode.
• the radiation-receiving semiconductor chip is a radiation detector or a solar cell.
• the semiconductor chip comprises a radiation-emitting or radiation-receiving zone with a radiation-generating or receiving pn junction.
• this pn junction can be formed by means of a p-type and an n-type semiconductor layer, which adjoin one another directly.
• the actual radiation-generating or receiving layer is formed between the p-type and the n-type layer.
• the actual radiation-generating layer may be formed in the form of a doped or undoped quantum layer.
• the quantum layer can be formed as single quantum well structure (SQW) or multiple quantum well structure (MQW, multiple quantum well) or else as quantum wire or quantum dot structure.
• the semiconductor chip embodied as a radiation detector may in particular have more than one radiation-receiving zone. The radiation-receiving zones may be arranged one above the other and absorb radiation of different wavelengths.
• III-V semiconductors for the semiconductor chip suitable materials, in particular arsenide, phosphide or nitride compound semiconductor with the material composition Al n Ga m Ini_ n _ m As, Al n Ga m ini- n - m P or Al n Ga m lnx- n -Mn where O ⁇ n ⁇ l, 0 ⁇ m ⁇ 1 and n + m ⁇ 1.
• this material need not necessarily have a mathematically exact composition according to the above formula. Rather, it may include one or more dopants as well as additional ingredients that do not substantially alter the physical properties of the material.
• the above formula includes only the essential constituents of the crystal lattice (Al, Ga, In, P), even though these may be partially replaced by small amounts of other substances.
• the semiconductor chip may include an element semiconductor such as silicon or an II-VI compound semiconductor, which is particularly suitable in the case of the solar cell.
• germanium may be used for a first radiation-receiving zone, while a second receiving zone may be formed of a III-V semiconductor.
• vertical herein means a direction in which the optical structure is arranged downstream of the semiconductor chip.
• Lateral is understood to mean a direction perpendicular to the vertical direction.
• FIG. 1 is a schematic cross-sectional view of an optoelectronic device for illustrating the effect of the optical device
• FIG. 2 shows a schematic cross-sectional view of the optoelectronic device with semiconductor chip, optical structure and concentrator
• Figure 3 is a schematic cross-sectional view of
• FIG. 4 shows a point diagram of an intensity distribution on the radiation passage area of the semiconductor chip
• FIG. 5 is a graph showing the trapped energy in an illuminated region of the semiconductor chip
• FIG. 6 shows a schematic top view of a contact structure
• FIG. 7 shows a schematic cross-sectional view of a radiation-emitting or radiation-receiving semiconductor chip.
• the same or equivalent elements are provided in the figures with the same reference numerals.
• FIG. 1 shows an optoelectronic device 1 which has a radiation-emitting or radiation-receiving semiconductor chip 2 and an optical device 3.
• the optical device 3 has on a side facing the semiconductor chip 2 a first aperture Ai which is smaller than a second aperture A 2 arranged on the side facing away from the semiconductor chip 2 .
• the chip size is preferably adapted to the size of the first aperture A 1 and in particular has the same lateral dimensions as the first aperture A 1 .
• the semiconductor chip 2 can have a rectangular, in particular square, plan view, wherein the ground plan area can assume values between 0.0001 cm 2 (100 ⁇ m ⁇ 100 ⁇ m 2) and 10 cm 2 .
• the lower limit is determined by the manufacturability or effectiveness of the contact structure.
• the upper limit is determined by the realizability of the optical device.
• a suitable size for the second aperture A 2 is, for example, 100 cm 2 .
• the semiconductor chip 2 in this case has a ground plan area of 1 cm 2 .
• the opening angle of the radiation cone is denoted which exits or by the second aperture A 2 of the optical device 3 enters through the second aperture A 2 in the optical means.
• 3 Is a far away source of radiation Radiation source as assumed by the sun, the angle ex is relatively small and is about 1 ° ( ⁇ 0.5 °).
• the angle ⁇ of the radiation cone decreases to the angle ⁇ and is for example about 0.7 ° ( ⁇ 0.35 °). Due to the preservation of the etendue in the optical device 3, the angle ⁇ occurring at the first aperture 1 is greater than the angle ⁇ occurring at the second aperture A 2 , since the first aperture 1 is smaller than the second aperture A 2 .
• the angle ⁇ in this case is 7 ° ( ⁇ 3.5 °).
• the solid angle factor is 100.
• the semiconductor chip 2 is a radiation receiver
• sunlight with an irradiance of 1000 W / m 2 can pass through the second aperture A 2 , which, as already mentioned, can have an area of 100 cm 2 , so that on a 1 cm 2 radiation passage area of the Semiconductor chips 2 a radiation power of 10 W is achieved.
• the semiconductor chip 2 is a radiation source, radiation with comparatively little divergence can be emitted by the optical device 3.
• the optoelectronic device 1 is thereby particularly suitable for use in projectors.
• FIG. 2 shows a possible embodiment of the optical device 3. This can have a parabolic concentrator 5, which guides the incident radiation through the concentrator body with as little loss as possible.
• the concentrator 5 may for example be a solid body, on the outer wall of the radiation is totally reflected and thus held in the concentrator 5.
• the Concentrator 5 be a hollow body with a mirrored inner surface.
• the optical device 3 comprises an optical structure 4 on a side facing the semiconductor chip 2.
• the optical structure 4 may be a separate element, which is preferably mechanically connected to the concentrator 5.
• the optical structure 4 may be integrally formed with the concentrator 5, that is, optical structure
• concentrator 4 and concentrator 5 are preferably made in one step from the same material.
• the latter option is preferably used when the concentrator
• the optical structure 4 advantageously has a periodic structure. As shown, the optical structure 4 comprises a plurality of regularly arranged optical elements 4a. In particular, the optical elements 4a are lenses with a convex surface.
• the optical structure 4, for example, per mm 2 have an optical element 4a, that is, the diameter of a single optical element 4a is about 1 mm ,
• this material can be used to advantage for the optical structure 4.
• FIG. 3 shows an enlarged detail of an optoelectronic device as shown in FIGS. 1 and 2.
• the optical structure 4 has a plurality of optical elements 4a, which are designed in particular as lenses. This has already been explained in more detail in connection with FIG.
• the light beams represented by lines of a beam generated by the respective optical elements 4a converge or diverge in the case of a radiation-emitting semiconductor chip.
• regions B of lesser intensity are present.
• the semiconductor chip 2 has contact elements (not shown), which together form a contact structure.
• the contact structure is preferably arranged on a radiation passage area 2 a of the semiconductor chip 2.
• the semiconductor chip 2 or the radiation-receiving or emitting zone need not be arranged directly in the plane which is spanned by the focal points of the optical elements 4a.
• the semiconductor chip 2 can be arranged close to this plane, in a slightly smaller vertical distance D from the optical structure 4.
• the distance D between the optical structure 4 and the semiconductor chip 2 is chosen to be so large that the contact structure can be made large enough without the risk of shading by the contact structure.
• the distance is chosen so small that the areas B are large enough to optimally use the chip area.
• FIG. 4 shows a simulated intensity distribution, as can occur on the radiation passage area 2a of a radiation-receiving semiconductor chip 2 according to FIGS. 1 to 3.
• the radiation passage area 2a has a size of 1 cm ⁇ 1 cm.
• the radiation is collected in separate regions L corresponding in number to the number of optical elements 4a (see Figure 3).
• 10 ⁇ 10 areas L occur on the radiation passage area 2a.
• the areas L illuminated by the beams are uniformly distributed on the radiation passage area 2a and separated from each other by the areas B of lower intensity.
• FIG. 5 shows the extent of the illuminated areas L.
• the ordinate indicates the energy content E within a region L of radius R from its center of gravity.
• the abscissa indicates the radius R.
• the different curves represent the values for different rays which impinge on the region L at different angles, in particular + 3.5 °.
• E 1
• the average diameter of the regions L can therefore be assumed to be about 500 ⁇ m.
• the distance between the centers of gravity of the areas L is about 1 mm here.
• the width of the regions B between the regions L can be up to 500 ⁇ m.
• FIG. 6 shows that shown in FIG.
• the contact structure 6 has a periodic structure, wherein the periodicity of the contact elements 6a coincides with the periodicity of the illuminated areas L.
• the illuminated areas L can be uniquely associated with the optical elements 4a of the optical structure 4 shown in FIG. Consequently, the periodicity of the contact structure 6 also coincides with the periodicity of the optical structure 4.
• the contact structure 6 is formed from net-like arranged contact elements 6a in the form of contact webs. These preferably contain a metal or a metal compound.
• the width of the contact webs is adapted to the width of the areas B. If they have a width of about 500 ⁇ m, the contact webs can be about 300 ⁇ m wide. However, smaller structures up to 10 ⁇ m are conceivable, depending on the application.
• FIG. 7 shows an enlarged detail of an optoelectronic device, as shown for example in FIG.
• the optoelectronic device comprises the semiconductor chip 2, which may be a light-emitting diode, a radiation detector or a solar cell, and the optical structure 4 with the optical elements 4a.
• the contact structure 6 On the radiation passage surface 2a of the semiconductor chip 2, the contact structure 6 is arranged with the contact elements 6a in the form of contact webs.
• the contact structure 6 is vertically spaced from the optical structure 4.
• the gap 8 advantageously has a different refractive index from the optical structure 4, which is smaller in particular.
• the gap 8 may be filled with air or silicone.
• the semiconductor chip 2 On the back side, the semiconductor chip 2 has a back side contact 7, which can cover the semiconductor chip 2 over its entire area.
• the contact elements 6a are arranged in intermediate spaces between the optical elements 4a.
• the optical elements 4a are enclosed in a frame-like manner by the contact elements 6a during a projection.
• the arrangement of the optical structure 4 relative to the contact structure 6 causes, in the case of a radiation-receiving semiconductor chip 2, that shading by the contact structure 6 does not occur through the contact structure 6.

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• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• General Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Spectroscopy & Molecular Physics (AREA)
• Microelectronics & Electronic Packaging (AREA)
• General Engineering & Computer Science (AREA)
• Led Device Packages (AREA)
• Photovoltaic Devices (AREA)

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Citations (14)

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• 2008
  • 2008-06-30 DE DE102008030819A patent/DE102008030819A1/de not_active Withdrawn
• 2009
  • 2009-06-25 WO PCT/DE2009/000882 patent/WO2010000232A1/de not_active Ceased
  • 2009-06-25 CN CN200980125121.6A patent/CN102077365B/zh not_active Expired - Fee Related
  • 2009-06-25 KR KR1020117002206A patent/KR20110052588A/ko not_active Ceased
  • 2009-06-25 EP EP09772002.3A patent/EP2294632B1/de not_active Not-in-force
  • 2009-06-25 JP JP2011515095A patent/JP5746023B2/ja not_active Expired - Fee Related
  • 2009-06-25 US US12/997,386 patent/US8686452B2/en active Active
• 2014
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