WO2009139190A1 - Détecteur de position et appareil de recouvrement de substrats - Google Patents

Détecteur de position et appareil de recouvrement de substrats Download PDF

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Publication number
WO2009139190A1
WO2009139190A1 PCT/JP2009/002160 JP2009002160W WO2009139190A1 WO 2009139190 A1 WO2009139190 A1 WO 2009139190A1 JP 2009002160 W JP2009002160 W JP 2009002160W WO 2009139190 A1 WO2009139190 A1 WO 2009139190A1
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WIPO (PCT)
Prior art keywords
optical system
objective optical
imaging unit
objective
adjustment
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PCT/JP2009/002160
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English (en)
Japanese (ja)
Inventor
修 山下
覚 真田
達朗 大瀧
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株式会社ニコン
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Priority to JP2010511896A priority Critical patent/JPWO2009139190A1/ja
Publication of WO2009139190A1 publication Critical patent/WO2009139190A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device

Definitions

  • the present invention relates to a precise position detection device used for a substrate overlaying device or the like.
  • the present invention relates to a position detection device having a pair of objective optical systems, and a substrate overlaying device including the same.
  • This application is related to the following Japanese application. For designated countries where incorporation by reference of documents is permitted, the contents described in the following application are incorporated into this application by reference and made a part of this application.
  • the position detection device of the wafer bonding apparatus of Patent Document 1 uses a reference microscope and a measurement microscope installed on the upper part of the wafer bonding apparatus.
  • the position detection apparatus of Patent Document 1 uses a reference microscope in advance to measure a fiducial mark on a wafer holder and an alignment mark on a semiconductor wafer, and then uses a measurement microscope to measure the reference position measured with the reference microscope.
  • the position coordinate of the alignment mark of the semiconductor wafer in the coordinate system is acquired. JP 2005-251972 A
  • the reference microscope and measurement microscope are placed on the ceiling of the bonding device, so the wafer holder and semiconductor wafer are placed on the lower stage, and the fiducial marks and alignment marks are measured. After that, the measured wafer holder and the semiconductor wafer are once removed and fixed to the upper stage, and the position of the fiducial mark of the wafer holder fixed to the upper stage is detected again from the back surface. For this reason, it takes a lot of time and labor to detect the positions of the wafer holder and the semiconductor wafer.
  • the position detection apparatus of the present invention is made to solve such a problem, and corrects the positional deviation of the optical axes even if the first objective optical element and the second objective optical element are provided. And accurate position detection can be performed. Further, it is possible to provide a high-accuracy wafer bonding apparatus having a high processing capability using this position detection apparatus.
  • a position detection device includes a first objective optical system, a first imaging unit that receives a light beam that has passed through the first objective optical system, and a second objective disposed to face the first objective optical system.
  • An optical system a second imaging unit that receives a light beam that has passed through the second objective optical system, an adjustment optical system that irradiates adjustment light to the first objective optical system and the second objective optical system, and a second imaging unit Based on the irradiated adjustment light, a positional deviation amount calculation unit that calculates the positional deviation amount between the optical axis of the first objective optical system and the optical axis of the second objective optical system, and the optical axis of the first objective optical system
  • a position detection apparatus comprising: an adjustment unit that adjusts a relative positional deviation with respect to the optical axis of the second objective optical system based on the positional deviation amount calculated by the positional deviation amount calculation unit, wherein the adjustment optical system includes: When arranged between the first objective optical system and the first imaging unit, the adjustment light is changed
  • a position detection apparatus includes a first objective optical system, a first imaging unit that receives a light beam that has passed through the first objective optical system, and a second objective that is disposed to face the first objective optical system.
  • An optical system a second imaging unit that receives a light beam that has passed through the second objective optical system, an adjustment optical system that irradiates adjustment light to the first objective optical system and the second objective optical system, and a second imaging unit Based on the irradiated adjustment light, a positional deviation amount calculation unit that calculates the positional deviation amount between the optical axis of the first objective optical system and the optical axis of the second objective optical system, and the optical axis of the first objective optical system
  • a position detection apparatus comprising: an adjustment unit that adjusts a relative positional deviation with respect to the optical axis of the second objective optical system based on the positional deviation amount calculated by the positional deviation amount calculation unit, wherein the adjustment optical system includes: The half mirror is disposed between the first objective optical system and the first imaging unit and
  • a substrate overlaying apparatus for superimposing a first substrate having a first alignment mark and a second substrate having a second alignment mark according to a third aspect, a first objective optical system for detecting the first alignment mark, A first position detection unit having a first imaging unit that receives a light beam that has passed through the objective optical system; a second objective optical system that is disposed opposite to the first objective optical system and detects a second alignment mark; A second position detection unit having a second imaging unit that receives a light beam that has passed through the objective optical system, an adjustment optical system that irradiates adjustment light to the first objective optical system and the second objective optical system, and a second imaging unit Based on the adjustment light emitted to the optical axis of the first objective optical system, and a positional deviation amount calculating unit for calculating the positional deviation amount between the optical axis of the first position detecting unit and the optical axis of the second position detecting unit.
  • An adjustment unit that adjusts based on the amount of positional deviation calculated by the displacement amount calculation unit, and the adjustment optical system is adjusted when disposed between the first objective optical system and the first imaging unit.
  • a reflection optical system that divides and reflects light in the direction of the first objective optical system and the direction of the first imaging unit, and a retreat that retracts the reflection optical system from between the first objective optical system and the first imaging unit. And a mechanism.
  • a substrate overlaying apparatus for overlaying a first substrate having a first alignment mark and a second substrate having a second alignment mark, a first objective optical system for detecting the first alignment mark,
  • a first position detection unit having a first imaging unit that receives a light beam that has passed through the objective optical system; a second objective optical system that is disposed opposite to the first objective optical system and detects a second alignment mark;
  • a second position detection unit having a second imaging unit that receives a light beam that has passed through the objective optical system, an adjustment optical system that irradiates adjustment light to the first objective optical system and the second objective optical system, and a second imaging unit Based on the adjustment light emitted to the optical axis of the first objective optical system, and a positional deviation amount calculating unit for calculating the positional deviation amount between the optical axis of the first position detecting unit and the optical axis of the second position detecting unit.
  • An adjustment unit that adjusts based on the positional deviation amount calculated by the displacement amount calculation unit, and the adjustment optical system is disposed between the first objective optical system and the first imaging unit, and the first objective optical system Is provided with a reflection optical system that is a half mirror that reflects the adjustment light.
  • a position detection device includes a first objective optical system, a first imaging unit that receives a light beam that has passed through the first objective optical system, and a second objective that is disposed to face the first objective optical system.
  • a position detection apparatus comprising: a position shift amount calculation unit that calculates a position shift amount between the optical axis of the first objective optical system and the optical axis of the second objective optical system based on the irradiated adjustment light;
  • the optical system includes a reflective optical system that divides and reflects the adjustment light into the direction of the first imaging unit and the direction of the second imaging unit.
  • a position detection device includes a first objective optical system, a first imaging unit that receives a light beam that has passed through the first objective optical system, and a second objective that is disposed to face the first objective optical system.
  • a position detection apparatus comprising: a position shift amount calculation unit that calculates a position shift amount between the optical axis of the first objective optical system and the optical axis of the second objective optical system based on the irradiated adjustment light;
  • the optical system includes a reflection optical system that is a half mirror that reflects the adjustment light to the first objective optical system.
  • a substrate overlaying apparatus for overlaying a first substrate having a first alignment mark and a second substrate having a second alignment mark, a first objective optical system for detecting the first alignment mark,
  • a first position detection unit having a first imaging unit that receives a light beam that has passed through the objective optical system; a second objective optical system that is disposed opposite to the first objective optical system and detects a second alignment mark;
  • a second position detection unit having a second imaging unit that receives a light beam that has passed through the objective optical system, an adjustment optical system that irradiates adjustment light to the first objective optical system and the second objective optical system, and a second imaging unit
  • a positional deviation amount calculation unit for calculating a positional deviation amount between the optical axis of the first position detection unit and the optical axis of the second position detection unit based on the adjustment light irradiated on the adjustment optical system.
  • the direction of the first imaging unit and the direction of the second imaging unit A reflective optical system for reflecting divided.
  • a substrate overlaying apparatus for overlaying a first substrate having a first alignment mark and a second substrate having a second alignment mark, a first objective optical system for detecting the first alignment mark,
  • a first position detection unit having a first imaging unit that receives a light beam that has passed through the objective optical system; a second objective optical system that is disposed opposite to the first objective optical system and detects a second alignment mark;
  • a second position detection unit having a second imaging unit that receives a light beam that has passed through the objective optical system, an adjustment optical system that irradiates adjustment light to the first objective optical system and the second objective optical system, and a second imaging unit
  • a positional deviation amount calculation unit that calculates a positional deviation amount between the optical axis of the first position detection unit and the optical axis of the second position detection unit based on the adjustment light irradiated on the adjustment optical system.
  • Half mirror that reflects adjustment light on one objective optical system Comprising a certain reflection optical system.
  • FIG. 3 is a schematic side view of a position detection device 70.
  • FIG. It is a flowchart of a deviation detection method and a deviation correction method.
  • FIG. 6A is a diagram in which a pinhole P is formed in the field stop 47.
  • FIG. (B) is a diagram in which a cross-shaped slit S is formed in the field stop 47.
  • (C) is a diagram in which four apertures HO are formed in the field stop 47.
  • 1 is a schematic top view of a wafer bonding apparatus 100.
  • FIG. 2 is a top view of a semiconductor wafer W.
  • FIG. (A) is a top view of the wafer holder WH.
  • (B) is an AA cross-sectional view of (a).
  • FIG. 2 is a configuration diagram of a side surface of an aligner 150.
  • FIG. 5 is a flowchart of the operation of the aligner 150.
  • 3 is an enlarged schematic side view in the vicinity of the first position detection device 10.
  • FIG. It is a flowchart of a deviation detection method and a deviation correction method.
  • 3 is an enlarged perspective view of the tip of the first position detection device 10 on the first wafer W1 side.
  • FIG. It is a block diagram of the side surface of the aligner 250. It is a block diagram of the side surface of the aligner 350.
  • First position detection device 11 First objective optical unit, 12 First imaging unit, 13 First objective lens, 14 First imaging lens, 15 First half mirror, 16 Second half mirror, 17 Prism, 19 half Mirror holder, 20 second position detection device, 21 second objective optical unit, 22 second imaging unit, 23 second objective lens, 24 second imaging lens, 25 third half mirror, 40 adjusting optical system, 41 light source, 43 fiber, 46 wafer lift pin, 47 field stop, 48 aperture stop, 50 first epi-illumination unit, 51 illumination light source, 42, 44, 52, 53, 57, 58 lens, 45 collimator lens, 55 second epi-illumination unit , 56 illumination light source, 60 misregistration amount calculation unit, 65 reflection mirror, 66 fourth half mirror, 70 position detection device, 1 0 Wafer bonding device, 110 Wafer stocker, 120 Wafer pre-alignment device, 130 Wafer holder stocker, 140 Wafer holder pre-alignment device, 150 Aligner, 151 First laser light wave interferometer, 152 Second laser light wave interferometer Longer, 154 1s
  • FIG. 1 is a schematic side view of the position detection device 70. As shown in FIG. 1, when the two first wafers W1 and the second wafer W2 to be overlapped are arranged in the center of the drawing, the position detection device 70 has a first position below the first wafer W1 and the second wafer W2. A detection device 10 is provided, and a second position detection device 20 is provided above the first wafer W1 and the second wafer W2.
  • the first position detection device 10 includes a first objective optical unit 11, an adjustment optical system 40, a first epi-illumination unit 50, and a first imaging unit 12.
  • the second position detection device 20 includes a second objective optical unit 21, a second epi-illumination unit 55, and a second imaging unit 22.
  • the first imaging unit 12 and the second imaging unit 22 are connected to a positional deviation amount calculation unit 60 formed of a computer or the like.
  • the positional deviation amount calculation unit 60 is connected to a drive unit 69 that moves the second objective optical unit 21 on the XY plane.
  • the first objective optical unit 11 of the first position detection apparatus 10 includes a first objective lens 13 on the first wafer W1 side and a first imaging lens 14 on the first imaging unit 12 side. Between the 1st objective lens 13 and the 1st imaging lens 14, the 1st half mirror 15 which reflects the light from the adjustment optical system 40, and the 2nd half mirror which reflects the light from the 1st epi-illumination part 50 16 are arranged.
  • the “lens” may be a single lens, a plurality of lens groups, or any optical system.
  • the first epi-illumination unit 50 of the first position detection device 10 includes an illumination light source 51, a lens 52, and a lens 53.
  • the illumination light source 51 is visible light, passes through the lens 52 and the lens 53, becomes parallel light, is reflected by the second half mirror 16 in the first objective optical unit 11, and travels in the direction of the first wafer W1.
  • the first epi-illumination unit 50 Koehler-illuminates the alignment mark of the first wafer W1 and its periphery with visible light.
  • the illumination light reflected by the first wafer W1 passes through the first objective lens 13 and passes through the first half mirror 15 and the second half mirror 16, and the first imaging lens 14 causes the first light such as a CCD camera.
  • the image is formed on the imaging unit 12. In this way, an image such as an alignment mark of the first wafer W1 is observed.
  • the second objective optical unit 21 of the second position detection device 20 includes a second objective lens 23 on the second wafer W2 side and a second imaging lens 24 on the second imaging unit 22 side. Between the second objective lens 23 and the second imaging lens 24, a third half mirror 25 that reflects light from the second epi-illumination unit 55 is disposed.
  • the second epi-illumination unit 55 of the second position detection device 20 includes an illumination light source 56, a lens 57, and a lens 58.
  • the illumination light source 56 is visible light, passes through the lens 57 and the lens 58, becomes parallel light, is reflected by the third half mirror 25 in the second objective optical unit 21 and travels in the direction of the second wafer W2, and the second wafer.
  • the alignment mark of W2 and its periphery are illuminated with visible light.
  • the illumination light reflected by the second wafer W 2 passes through the second objective lens 23, passes through the third half mirror 25, and forms an image on the second imaging unit 22 by the second imaging lens 24. In this way, an image such as an alignment mark of the second wafer W2 is observed.
  • the optical axis OA1 and the second of the first objective optical unit 11 If the optical axis OA2 of the objective optical unit 21 is displaced (XY direction), the positional relationship between the first wafer W1 and the second wafer W2 cannot be accurately determined.
  • the adjustment optical system 40 provided on the first objective optical unit 11 side includes a light source 41, a lens 42, a fiber 43, a lens 44, a collimator lens 45, a field stop 47 such as a pinhole, and an aperture stop 48. It is composed of The adjustment optical system 40 may be provided on the second objective optical unit 21 side.
  • the light from the light source 41 is visible light or light having a single wavelength within the visible light wavelength.
  • the amount of positional deviation between the optical axis OA1 of the first objective optical unit 11 and the optical axis OA2 of the second objective optical unit 21 can be measured as follows. In the following description, it is assumed that the optical axis OA4 of the adjustment optical system 40 and the optical axis OA1 of the first objective optical unit 11 are the same.
  • the first wafer W1 and the second wafer W2 are removed from the optical path between the optical axis OA1 of the first objective optical unit 11 and the second objective optical unit 21.
  • the light source 41 is turned on, and the reference light from the light source 41 is collected by the lens 42 and enters the fiber 43.
  • the visible light that has passed through the fiber 43 is emitted toward the lens 44, passes through the field stop 47, passes through the collimator lens 45, and becomes parallel light.
  • the reference light that has passed through the aperture stop 48 is reflected by the first half mirror 15 in the first objective optical unit 11.
  • the reference light reflected by the first half mirror 15 passes through the second half mirror 16, passes through the first objective lens 13, and proceeds to the second objective lens 23.
  • the reference light passes through the second objective lens 23, passes through the third half mirror 25, and enters the second imaging unit 22.
  • the image signal of the incident position of the reference light in the second imaging unit 22 is sent to the positional deviation amount calculation unit 60.
  • the positional deviation amount calculation unit 60 calculates how much the optical axis OA2 of the second objective optical unit 21 is displaced from the image signal of the reference light.
  • the misregistration amount calculation unit 60 sends this misregistration amount to the drive unit 69, and the drive unit 69 moves the second objective optical unit 21 in the XY directions, and the optical axis OA4 of the adjustment optical system 40 and the second objective optical unit 21.
  • the amount of positional deviation from the optical axis OA2 is adjusted.
  • the optical axis OA4 of the adjustment optical system 40 and the optical axis OA1 of the first objective optical unit 11 have already coincided, the optical axis OA1 of the first objective optical unit 11 and the optical axis OA2 of the second objective optical unit 21 And have been adjusted.
  • the optical axis OA1 of the first objective optical unit 11 and the optical axis OA2 of the second objective optical unit 21 are tilted from the absolute reference Z axis, for example, the collection of the first objective lens 13 and the second objective lens 23 is performed. If the light positions are correct, the reference light measured by the first image pickup unit 12 and the second image pickup unit 22 is not shifted, so that the optical axis shift can be measured without being affected by the tilt of the optical axis.
  • the position detection device 70 has focal planes of the first objective lens 13 and the second objective lens 23 that are separated from each other in the optical axis direction.
  • the reference light passes from the first objective lens 13 to the second objective lens 23 without being affected by the separation of the surface. That is, even when the sample is thick, the position detection device 70 can accurately measure the optical axis deviation.
  • the first half mirror 15 is described as being disposed in the first objective optical unit 11. However, for example, between the first objective lens 13 and the second objective lens 23, the reference light is transmitted.
  • the adjustment optical system 40 may be configured to be disposed at a position where it can be reflected toward the reflection mirror 65.
  • FIG. 2 is a flowchart for measuring the positional deviation amount and correcting the positional deviation amount. The following will be described using a flowchart.
  • step S01 to step S06 first, it is measured whether or not the optical axis OA4 of the adjustment optical system 40 and the optical axis OA1 of the first objective optical unit 11 coincide.
  • a reflection mirror 65 (see FIG. 1) is inserted in place of the first wafer W1 and the second wafer W2.
  • the reflection surface of the reflection mirror 65 faces the first imaging unit 12 side of the first position detection device 10.
  • the reflection mirror 65 only needs to be kept horizontal, and there is no influence on the position in the Z direction.
  • step S02 the positional deviation amount calculation unit 60 turns on the light source 41 of the adjustment optical system 40.
  • the reference light that has passed through the field stop 47 is reflected by the first half mirror 15, passes through the second half mirror 16, and the first objective lens 13 in this order, and enters the inserted reflection mirror 65. Projected.
  • the reference light projected on the reflection mirror 65 is reflected toward the first imaging unit 12 and passes through the first objective lens 13, the second half mirror 16, the first half mirror 15, and the first imaging lens 14 in this order. The light enters the first imaging unit 12 side.
  • step S ⁇ b> 03 the positional deviation amount calculation unit 60 calculates the positional deviation amount between the optical axis OA ⁇ b> 1 of the first objective optical unit 11 and the optical axis OA ⁇ b> 4 of the adjustment optical system 40 from the reference light detected by the first imaging unit 12. . Since the reference light is formed by a thin light, the diameter of the image by the reference light does not change much even when passing through the distance and the lens. Even if the diameter increases, the misregistration amount calculation unit 60 can accurately measure the center position by measuring the center position of the image, and can compare with the center position of the first imaging unit 12. it can.
  • step S04 the positional deviation amount calculation unit 60 determines whether there is a positional deviation between the optical axis OA1 of the first objective optical unit 11 and the optical axis OA4 of the adjustment optical system 40. If a positional deviation has occurred, the process proceeds to step S05 to correct the positional deviation. If no positional deviation has occurred, the process proceeds to step 06.
  • step S05 the positional deviation amount calculation unit 60 adjusts the angle of the first half mirror 15 of the first objective optical unit 11.
  • the positional deviation amount calculation unit 60 can match the center position of the pinhole image projected on the reflection mirror 65 with the center position of the first imaging unit 12, and adjust the position of the first position detection device 10. can do.
  • the positional deviation amount calculation unit 60 can also adjust by moving the field stop 47 in a direction intersecting the optical path from the light source 41.
  • step S06 the positional deviation amount calculation unit 60 retracts the reflection mirror 65 inserted in step S01. By retracting the reflecting mirror 65, the reference light enters the second position detection device 20.
  • step S07 the positional deviation amount calculation unit 60 calculates the positional deviation amount between the optical axis OA2 of the second objective optical unit 21 and the optical axis OA4 of the adjustment optical system 40 from the reference light incident on the second position detection device 20. To do.
  • the reference light passes through the second objective lens 23 of the second objective optical unit 21, the third half mirror 25, and the second imaging lens 24 in this order, and the image of the reference light is detected by the second imaging unit 22.
  • step S08 the positional deviation amount calculation unit 60 determines whether there is a positional deviation between the optical axis OA2 of the second objective optical unit 21 and the optical axis OA4 of the adjustment optical system 40. If a positional deviation has occurred, the process proceeds to step S09 to correct the positional deviation. If no positional deviation has occurred, the process proceeds to step 10.
  • step S09 the misregistration amount calculation unit 60 adjusts the optical axis OA2 of the second objective optical unit 21 and the optical axis OA4 of the adjustment optical system 40 to coincide with each other. Adjustment of the second objective optical unit 21 is performed by causing the drive unit 69 to move the second objective optical unit 21 in the XY directions so that the center position of the reference light from the light source 41 matches the center position of the second imaging unit 22. Can be made.
  • step S10 the positional deviation amount calculation unit 60 turns off the light source 41 of the adjustment optical system 40. Since the position adjustment between the optical axis OA1 of the first objective optical unit 11 and the optical axis OA2 of the second objective optical unit 21 is completed, the unnecessary light source 41 is turned off.
  • the position detection device 70 can detect the position with an accurate value without deviation between the measurement value of the first position detection device 10 and the measurement value of the second position detection device 20. For this reason, the position detection device 70 is effective in a wafer bonding apparatus described below.
  • the drive unit 69 shifts the position of the optical axis OA2 of the second objective optical unit 21 and the optical axis OA4 of the adjustment optical system 40 through steps S07 to S10 in the flowchart of FIG.
  • the second objective optical unit 21 was moved and corrected.
  • the driving unit 69 may be provided in the first objective optical unit 11 so that the first objective optical unit 11 is moved and corrected.
  • the positional deviation amount between the center position of the pinhole image and the central position of the second imaging unit 22 is measured in step S07 without moving the second objective optical unit 21 by the driving unit 69, and the positional deviation amount is calculated.
  • a method of adding a correction value to at least one measurement value of the second position detection device 20 or the first position detection device 10 may be used. In this case, since it is not necessary to move the second objective optical unit 21 by the driving unit 69 in step S09, the processing steps can be shortened.
  • FIG. 3 is a diagram showing an example of the field stop 47 that forms the reference light.
  • the field stop 47 shown in FIG. 3A is a field stop 47 having a pinhole P in the center of the light shielding area SA.
  • a field stop 47 having a pinhole P in the center of the light shielding area SA is formed as a circular image in the first imaging unit 12 and the second imaging unit 22. Therefore, in order to obtain the center of the reference light, for example, the center of gravity of a circular image may be measured.
  • 3B is a field stop 47 in which a cross-shaped slit S is formed in the light shielding area SA.
  • the field stop 47 in which the cross-shaped slit S is formed is formed as a cross-shaped image in the first imaging unit 12 and the second imaging unit 22. Therefore, in order to obtain the center of the reference light, for example, the center of a cross-shaped image is measured.
  • the field stop 47 shown in FIG. 3C is a field stop 47 in which four openings HO are formed in the light shielding area SA.
  • the center of the four openings HO is the center of the optical axis OA4 of the adjustment optical system 40.
  • the field stop 47 in which the four openings HO are formed is formed as four point images in the first imaging unit 12 and the second imaging unit 22. For this reason, in order to obtain the center of the reference light, for example, the centroids of four point images may be measured.
  • the optical axis OA4 of the adjustment optical system 40 can be obtained if the number of openings is three or more instead of the four openings HO.
  • the adjustment optical system 40 of the first position detection apparatus 10 forms the thin reference light using the field stop 47
  • a laser beam with high directivity of visible light may be used to obtain the thin reference light.
  • the laser light directly enters the first half mirror 15 in the first objective optical unit 11 through a beam expander.
  • FIG. 4 is a schematic top view of the wafer bonding apparatus 100.
  • the wafer bonding apparatus 100 includes a wafer loader WL and a wafer holder loader WHL.
  • the wafer loader WL and the wafer holder loader WHL are articulated robots and can move in directions of six degrees of freedom (X, Y, Z, ⁇ X, ⁇ Y, ⁇ Z). Further, the wafer loader WL can move a long distance in the Y direction along the rail RA, and the wafer holder loader WHL can move a long distance in the X direction along the rail RA.
  • the wafer bonding apparatus 100 includes a wafer stocker 110 that stores a plurality of semiconductor wafers W. Since the wafer bonding apparatus 100 bonds the first wafer W1 and the second wafer W2, a wafer stocker 110-1 for storing the first wafer W1 and a wafer stocker 110-2 for storing the second wafer W2 are prepared. Has been. A wafer pre-alignment apparatus 120 that pre-aligns the semiconductor wafer W is provided in the vicinity of the wafer stocker 110. The semiconductor wafer W taken out from the wafer stocker 110 by the wafer loader WL is sent to the wafer pre-alignment apparatus 120.
  • the wafer bonding apparatus 100 includes a wafer holder stocker 130 for storing a plurality of wafer holders WH, a wafer holder pre-alignment apparatus 140 for pre-aligning the wafer holder WH, and two semiconductor wafers W with line width accuracy of semiconductor chips.
  • the aligner 150, the heating / pressurizing device 170, the separation / cooling unit 180, and the main controller 190 are overlapped.
  • the semiconductor wafer W is formed with a notch NC indicating the crystal orientation of the semiconductor wafer W in a part of the periphery thereof. Further, the semiconductor chip region CH is formed on the semiconductor wafer W to be bonded to about several tens to several hundred shots.
  • a plurality of alignment marks AM are formed around the semiconductor chip region CH by a photolithography process. The alignment mark AM is formed in a cross shape and a circular shape.
  • the wafer pre-alignment apparatus 120 observes two or more alignment marks AM with an alignment camera (not shown), calculates the amount of deviation of the semiconductor wafer W from the predetermined position of the stage in the X direction, Y direction, and ⁇ direction. Pre-align W.
  • the wafer pre-alignment apparatus 120 positions the semiconductor wafer W in the range of 10 ⁇ m to 50 ⁇ m from the design reference value.
  • the wafer pre-alignment apparatus 120 is such that, in the relationship between the designed alignment mark AM and the actual alignment mark AM observed by the alignment camera, the overlay error is reduced on average for any semiconductor chip region CH. Further, the actual semiconductor chip region CH position is obtained by correcting the designed semiconductor chip region CH arrangement using the least square method.
  • the wafer holder stocker 130 can store a plurality of wafer holders WH. This is because the wafer holder WH supports the thin semiconductor wafer W.
  • the wafer holder WH has a first wafer holder WH1 for the first wafer W1, and also has a second wafer holder WH2 for the second wafer W2.
  • the wafer bonding apparatus 100 accommodates the wafer holder stocker 130 for the first wafer holder WH1 and the second wafer holder WH2, or divides the interior of the wafer holder stocker 130, etc. Separate wafer holder WH2. Separating the wafer holder WH can cope with a case where a fixing function is built in the wafer holder WH.
  • the wafer holder WH is a component that is used as a support for adsorbing the semiconductor wafer W and bonding the wafers together, and is used repeatedly.
  • the wafer holder WH is made of a ceramic material such as alumina (Al2O3) or aluminum nitride (AlN).
  • Al2O3 alumina
  • AlN aluminum nitride
  • aluminum nitride is suitable for heating or cooling the semiconductor wafer W because of its high thermal conductivity.
  • the wafer bonding apparatus 100 is provided with a wafer holder pre-alignment apparatus 140 that pre-aligns the wafer holder WH in the vicinity of the wafer holder stocker 130. Wafer holder WH taken out from wafer holder stocker 130 by wafer holder loader WHL is sent to wafer holder pre-alignment apparatus 140.
  • FIG. 6 (a) is a top view of the wafer holder WH
  • FIG. 6 (b) is a cross-sectional view taken along the line AA in FIG. 6 (a).
  • the wafer holder WH has a circular shape with a notch NT formed in part, and two fiducial marks FM around it.
  • the fiducial mark FM of the wafer holder WH is drawn with chromium or the like on a quartz glass base material. That is, the fiducial mark FM can be observed from the front side and the back side of the wafer holder WH.
  • a pair of fiducial marks FM is provided symmetrically about the center of the wafer holder WH, and a cross-shaped or circular mark is formed.
  • the wafer holder WH is made of an alumina ceramic as an insulator. As shown in FIG. 6B, an application electrode EL for electrostatically attracting the semiconductor wafer W is built in the center of the wafer holder WH. The surface of the wafer holder WH is polished, and the semiconductor wafer W is electrostatically adsorbed at the center.
  • the wafer holder pre-alignment apparatus 140 observes the two fiducial marks FM with an alignment camera, and the wafer holder WH corrects deviation amounts in the X direction, the Y direction, and the ⁇ direction from a predetermined position of the stage. As a result, the pre-aligned wafer holder WH is positioned within the range of 10 ⁇ m or less to 50 ⁇ m from the design reference value.
  • the wafer holder WH is pre-aligned at a correct position and is in a standby state at that position.
  • Three wafer lift pins 46 are lifted from the wafer holder WH, and the pre-aligned semiconductor wafer W from the wafer pre-alignment apparatus 120 is placed on the wafer holder WH at a predetermined position, and the wafer lift pins 46 are lowered.
  • the wafer holder WH electrostatically attracts the semiconductor wafer W by applying it to the application electrode EL.
  • the pre-aligned semiconductor wafer W is placed on the pre-aligned wafer holder WH with high accuracy. That is, the alignment mark AM of the semiconductor wafer W can be positioned within a predetermined range with respect to the fiducial mark FM of the wafer holder WH. Thus, the semiconductor wafer W on the wafer holder WH is positioned in the range of 20 ⁇ m to 100 ⁇ m from the design reference value. For this reason, when the alignment mark AM is detected with the aligner 150 described later on the basis of the fiducial mark FM, it can be observed with higher accuracy by the position detection device 70 described in the first embodiment.
  • the wafer holder WH on which the semiconductor wafer W is placed is sent from the wafer holder pre-alignment apparatus 140 to the aligner 150 by the wafer holder loader WHL.
  • the aligner 150 can efficiently overlap the first wafer W1 and the second wafer W2 with the line width accuracy of the semiconductor chip.
  • pre-pressurization is applied and held by a fixture so as not to shift the position.
  • the first wafer holder WH1 and the second wafer holder WH2 held by the fixture are sent to the heating and pressing device 170 by the wafer holder loader WHL.
  • a detailed description of the aligner 150 will be described later.
  • the first wafer W1 and the second wafer W2 can be bonded together with high accuracy by heating and pressing after making a vacuum atmosphere.
  • the separation cooling unit 180 of the wafer bonding apparatus 100 removes the bonded semiconductor wafer W from the wafer holder WH, and cools the bonded semiconductor wafer W to a predetermined temperature.
  • the cooled semiconductor wafer W is taken out from the separation cooling unit 180 by the wafer loader WL and sent to the bonded wafer stocker 185.
  • the cooled wafer holder WH is taken out from the separation cooling unit 180 by the wafer holder loader WHL and returned to the wafer holder stocker 130 again.
  • the main controller 190 of the wafer bonding apparatus 100 transfers signals to and from a control apparatus that controls each apparatus such as the wafer loader WL, the wafer holder loader WHL, the wafer pre-alignment apparatus 120, and the wafer holder pre-alignment apparatus 140. Take control.
  • FIG. 7 is a configuration diagram of the aligner 150 viewed from the side.
  • the aligner 150 includes a first table 154 and a second table 156.
  • a first driving device 155 is installed on the upper portion of the first table 154, and a second driving device 153 is installed on the lower portion of the second table 156.
  • a first laser light wave interference type length measuring device (hereinafter referred to as a first interferometer) 151 is installed beside the first driving device 155, and a second laser light wave interference type measuring device is provided beside the second driving device 153.
  • a long device hereinafter referred to as a second interferometer
  • 152 is installed.
  • the aligner 150 includes an aligner controller 160, and controls the first driving device 155, the second driving device 153, and the moving means in the Z direction, the first interferometer 151, the second interferometer 152, and the first interferometer 152.
  • the position detection device 10 and the second position detection device 20 are controlled.
  • the holder holding surface of the first table 154 and the holder holding surface of the second table 156 face each other.
  • the first wafer W1 is sent to the aligner 150 from the wafer holder pre-alignment device 140 by the wafer holder loader WHL while the first wafer W1 is placed on the first wafer holder WH1 and the second wafer W2 is placed on the second wafer holder WH2. come.
  • the first wafer holder WH1 is fixed to the first table 154, and the second wafer holder WH2 is fixed to the second table 156. That is, the first wafer W1 and the second wafer W2 are set so that their overlapping surfaces face each other.
  • the first table 154 is moved in at least the X and Y directions by the first driving device 155, and the movement amount of the first table 154 is measured by the first interferometer 151.
  • the second table 156 is moved at least in the X and Y directions by the second driving device 153, and the movement amount of the second table 156 is measured by the second interferometer 152.
  • the first position detection device 10 and the second position detection device 20 are fixed to the ceiling and the floor, they do not move. Therefore, when the position of the position detection device 70 shown in the first embodiment is adjusted, the fiducial mark FM of the wafer holder WH and the alignment mark AM of the semiconductor wafer W can be accurately detected, and the first position at the detection position can be detected.
  • the values of the first interferometer 151 and the second interferometer 152 can be trusted.
  • two position detecting devices 70 are arranged on the ceiling and the floor on both sides of the first table 154 and the second table 156, respectively, so that the amount of movement of the table can be as much as the radius of the wafer.
  • the fiducial marks FM and alignment marks AM are efficiently measured using the position detection devices 70 on both sides.
  • the position detection device 70 has a magnification of about 40 to 100 times, and the field of view is narrowed by the higher magnification.
  • the position information obtained by accurately measuring the plurality of alignment marks AM and the fiducial marks FM is sent to the aligner control unit 160 and arranged so that the first wafer W1 and the second wafer W2 overlap with each other with high accuracy.
  • the first wafer W1 and the second wafer W2 that are close to each other are held by a fixture and sent to the heating and pressurizing apparatus 170 in the next step.
  • the wafer bonding apparatus 100 according to the present embodiment can adjust the accuracy of the position detection device 70 for each wafer by using the position detection device 70 according to the first embodiment in the aligner 150. It can be carried out.
  • FIG. 8 shows a flowchart of the operation of the aligner 150. The operation will be described below based on the flowchart.
  • step S21 the aligner control unit 160 operates the first position detection device 10 and the second position detection device 20 to adjust the position accuracy. If there is a problem with the positional accuracy, the positional deviation amount calculation unit 60 of the first embodiment adjusts.
  • step S22 the aligner control unit 160 holds the first wafer holder WH1 conveyed by the wafer holder loader WHL at a predetermined position of the first table 154.
  • step S23 the aligner control unit 160 holds the second wafer holder WH2 conveyed by the wafer holder loader WHL at a predetermined position of the second table 156.
  • step S24 the aligner control unit 160 precisely measures the fiducial mark FM of the first wafer holder WH1 and the alignment mark AM of the first wafer W1 with the first position detection device 10.
  • the first table 154 is moved, the fiducial mark FM and the alignment mark AM are captured by the first position detecting device 10, and the positions thereof are measured by the first interferometer 151.
  • the second wafer holder WH2 held on the second table 156 is moved so as to be removed from the field of view of the first position detection device 10.
  • the aligner control unit 160 moves the second wafer holder WH2 in the Y direction in FIG. 7 so that the circular second wafer holder WH2 deviates from the field of view of the first position detection device 10.
  • step S25 the aligner control unit 160 accurately measures the fiducial mark FM of the second wafer holder WH2 and the alignment mark AM of the second wafer W2 with the second position detection device 20.
  • the second table 156 is moved, the fiducial mark FM and the alignment mark AM are captured by the second position detection device 20, and the positions thereof are measured by the first interferometer 151.
  • the first wafer holder WH1 held on the first table 154 is moved so as to be removed from the field of view of the second position detection device 20.
  • the aligner control unit 160 moves the first wafer holder WH1 in the Y direction in FIG.
  • the aligner control unit 160 obtains positional information of the fiducial mark FM and the alignment mark AM by the wafer pre-alignment device 120, the first position detection device 10 and the second position detection device 20 having a narrow field of view can quickly detect the field of view. Can be moved to.
  • step S26 the aligner control unit 160 adjusts the overlay position to the line width accuracy of the semiconductor chip from the position of the alignment mark AM on the first wafer W1 and the alignment mark AM on the second wafer W2.
  • the aligner control unit 160 performs calculation by the least square method so that the position error of the alignment mark AM between the first wafer W1 and the second wafer W2 is minimized.
  • the first position detector 10 observes the fiducial mark FM of the second wafer holder WH2
  • the second position detector 20 observes the fiducial mark FM of the first wafer holder WH1 while aligning the aligner.
  • the controller 160 moves the first table 154 and the second table 156.
  • step S27 the aligner control unit 160 brings the first wafer W1 and the second wafer W2 close to each other.
  • the first table 154 or the second table 156 is moved in the Z direction while maintaining the table position.
  • the first position detection device 10 observes the fiducial mark FM of the second wafer holder WH2.
  • the second position detection device 20 observes the fiducial mark FM of the first wafer holder WH1. Since the optical axes of the first position detection device 10 and the second position detection device 20 coincide with each other, the first wafer holder WH1 and the second wafer holder WH2 can be accurately overlapped.
  • step S28 the aligner control unit 160 holds the first wafer holder WH1 and the second wafer holder WH2 with a fixture and fixes them so as not to shift.
  • the held first wafer holder WH1 and second wafer holder WH2 are sent from the aligner 150 to the heating and pressing device 170 by the wafer holder loader WHL.
  • the displacement amount may be added as a correction value to the movement target amount in the XY direction of at least one of the first table 154 or the second table 156.
  • the third embodiment is a modification of the first embodiment. Specifically, the configuration of the first position detection device 10 in the position detection device 70 described with reference to FIG. 1 is slightly different.
  • FIG. 9 is an enlarged schematic side view of the vicinity of the first position detection device 10.
  • the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.
  • the first position detection device 10 according to the present embodiment includes a prism 17 that can advance and retreat with respect to the optical axis OA1, instead of the first half mirror 15, as compared with the first position detection device 10 shown in FIG. The point is different.
  • the prism 17 includes an advance / retreat mechanism, and is inserted into the optical axis OA1 when adjusting the position of the optical axis OA1 of the first objective optical unit 11 and the optical axis OA2 of the second objective optical unit 21.
  • the prism 17 indicated by the solid line represents the state inserted into the optical axis OA1
  • the prism 17 indicated by the dotted line represents the retracted state.
  • the forward / backward movement of the prism 17 is controlled by the positional deviation amount calculation unit 60.
  • the prism 17 may be a triangular mirror having a mirror attached thereto.
  • the prism 17 When the prism 17 is inserted into the optical axis OA1, the prism 17 converts the light beam OD emitted from the aperture stop 48 of the adjustment optical system 40 into the light beam OR1 to the first imaging unit 12 side and the second imaging unit 22 side.
  • the light beam OR2 is divided and reflected.
  • the reflecting surface of the prism 17 is formed so that the optical axes of the light beams OR1 and OR2 coincide.
  • the relative positional shift amounts of the optical axis OA4 of the adjustment optical system 40, the optical axis OA1 of the first objective optical unit 11, and the optical axis OA2 of the second objective optical unit 21 are set to the first.
  • the adjustment can be performed with the objective optical unit 11 and the second objective optical unit 21 facing each other.
  • the adjustment optical system 40 can also be configured so that the prism 17 is disposed between the first objective lens 13 and the second objective lens 23, for example. Further, instead of providing a retraction mechanism for the prism 17, a retraction mechanism is provided for the first objective optical unit 11 and the second objective optical unit 21 and driven to relatively retract the prism 17 to the outside of the optical axis. You may let them. A specific adjustment method will be described below.
  • FIG. 10 is a flowchart of a deviation detection method and a deviation correction method using the prism 17. The following will be described using a flowchart.
  • step S31 the misregistration amount calculation unit 60 inserts the prism 17 into the optical axis OA1. At this time, the prism 17 is caused to enter a position where the optical axis of the reflected light beam OR1 is predicted to coincide with the approximate optical axis OA1. When the insertion of the prism 17 is completed, the positional deviation amount calculation unit 60 turns on the light source 41 of the adjustment optical system 40 in step S32.
  • a part of the light beam OD which is the reference light that has passed through the field stop 47 and the aperture stop 48, is reflected by the prism 17 to become the light beam OR1, and passes through the first imaging lens 14 and passes through the first imaging lens 14. 1 enters the imaging unit 12.
  • the luminous flux OR ⁇ b> 1 is reference light incident on the first imaging unit 12.
  • a part of the light beam OD is reflected by the prism 17 to become a light beam OR2, and passes through the first objective lens 13, the second objective lens 23, and the second imaging lens 24 and enters the second imaging unit 22.
  • the luminous flux OR ⁇ b> 2 is reference light incident on the second imaging unit 22.
  • step S ⁇ b> 34 the positional deviation amount calculation unit 60 determines the positional deviation between the optical axis OA ⁇ b> 1 of the first objective optical unit 11 and the optical axis OA ⁇ b> 4 of the adjustment optical system 40 from the light beam OR ⁇ b> 1 that is the reference light detected by the first imaging unit 12. Calculate the amount.
  • the misregistration amount calculation unit 60 can accurately measure the center position by measuring the center position of the image, and can compare with the center position of the first imaging unit 12. it can.
  • step S34 the positional deviation amount calculation unit 60 determines whether there is a positional deviation between the optical axis OA1 of the first objective optical unit 11 and the optical axis OA4 of the adjustment optical system 40. If a positional deviation has occurred, the process proceeds to step S35 to correct the positional deviation. If no displacement has occurred, the process proceeds to step S36.
  • step S35 the positional deviation amount calculation unit 60 adjusts the field stop 47 by moving it in the direction intersecting the optical path from the light source 41. Accordingly, the positional deviation amount calculation unit 60 can match the center position of the light beam OR1 with the center position of the first imaging unit 12, and can adjust the position of the first position detection device 10.
  • step S36 the positional deviation amount calculation unit 60 determines the optical axis OA2 of the second objective optical unit 21 and the optical axis OA4 of the adjustment optical system 40 from the light beam OR2 that is the reference light incident on the second position detection device 20. Is calculated. At this point, the positional deviation between the optical axis OA1 of the first objective optical unit 11 and the optical axis OA4 of the adjustment optical system 40 has already been adjusted. Further, the reflecting surface of the prism 17 is formed so that the optical axes of the light beams OR1 and OR2 coincide with each other. Further, the optical axis OA2 of the second objective optical unit is adjusted in advance to coincide with the center position of the second imaging unit 22.
  • the center position of the image of the light beam OR2 as the reference light is compared with the center position of the second imaging unit 22, the positional deviation between the optical axis OA2 of the second objective optical unit 21 and the optical axis OA4 of the adjustment optical system 40.
  • the amount can be calculated, and as a result, the amount of positional deviation from the optical axis OA1 can be calculated.
  • step S37 the positional deviation amount calculation unit 60 determines whether there is a positional deviation between the optical axis OA2 of the second objective optical unit 21 and the optical axis OA4 of the adjustment optical system 40. If a positional deviation has occurred, the process proceeds to step S38 to correct the positional deviation. If no displacement has occurred, the process proceeds to step S39.
  • step S38 the positional deviation amount calculation unit 60 adjusts the optical axis OA2 of the second objective optical unit 21 and the optical axis OA4 of the adjustment optical system 40 to coincide with each other.
  • the second objective optical unit 21 is adjusted by causing the drive unit 69 to move the second objective optical unit 21 in the XY directions so that the center position of the image of the light beam OR2 matches the center position of the second imaging unit 22. Can do.
  • step S39 the misregistration amount calculation unit 60 turns off the light source 41 of the adjustment optical system 40.
  • step S40 the positional deviation amount calculation unit 60 retracts the prism 17 from the optical axis OA1.
  • the position detection device 70 can detect the position with an accurate value without deviation between the measurement value of the first position detection device 10 and the measurement value of the second position detection device 20. For this reason, the position detection apparatus 70 exhibits an effect in the above-mentioned wafer bonding apparatus.
  • the drive unit 69 shifts the positional deviation between the optical axis OA2 of the second objective optical unit 21 and the optical axis OA4 of the adjustment optical system 40 through steps S36 to S40 in the flowchart of FIG.
  • the second objective optical unit 21 was moved and corrected.
  • the driving unit 69 may be provided in the first objective optical unit 11 so that the first objective optical unit 11 is moved and corrected.
  • the positional deviation amount between the center position of the pinhole image and the central position of the second imaging unit 22 is measured in step S36 without moving the second objective optical unit 21 by the driving unit 69, and the positional deviation amount is calculated.
  • a method of adding a correction value to at least one measurement value of the second position detection device 20 or the first position detection device 10 may be used. In this case, since it is not necessary to move the second objective optical unit 21 by the driving unit 69 in step S38, the processing process can be shortened.
  • step S35 the position shift between the optical axis OA1 of the first objective optical unit 11 and the optical axis OA4 of the adjustment optical system 40 is corrected by moving the field stop 47.
  • the optical axes of the luminous flux OR1 and the luminous flux OR2 coincide with each other, the relative position between the center position of the image of the luminous flux OR1 and the central position of the first imaging unit 12 can be obtained without moving the field stop 47.
  • the second objective optical unit 21 may be moved and corrected by the drive unit 69 so that the relative relationship between the center position of the image of the light beam OR2 and the center position of the second imaging unit 22 becomes equal. In this case, since it is not necessary to move the field stop 47 in step S35, the processing process can be shortened.
  • the optical axis of the light beam OR1. Can be calculated as a correction value, and a correction value may be added to at least one of the measurement values of the second position detection device 20 or the first position detection device 10. .
  • the processing steps can be further shortened.
  • the fourth embodiment is a modification of the first embodiment. Specifically, a difference is that a half mirror is provided at the tip of the first position detection device 10 instead of the reflection mirror 65.
  • the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.
  • FIG. 11 is an enlarged perspective view of the front end of the first position detection apparatus 10 on the first wafer W1 side.
  • a half mirror holder 19 is provided at a front end of the first position detection device 10 on the first wafer W1 side in a barrel that accommodates the first objective lens and the like.
  • the half mirror holder 19 is a position at which the reference light from the adjustment optical system 40 reflected by the first half mirror 15 is reflected, and the surface thereof is in the vicinity of the focal plane of the reference light.
  • the half mirror 66 is held. That is, the fourth half mirror 66 is also fixed with respect to the optical axis OA1.
  • the reference light reflected by the first half mirror 15 passes through the second half mirror 16 and the first objective lens 13 in this order, and is projected onto the fourth half mirror 66.
  • a part of the reference light projected on the fourth half mirror 66 is reflected toward the first imaging unit 12, and the first objective lens 13, the second half mirror 16, the first half mirror 15, and the first imaging lens. 14 passes in the order of 14 and enters the first imaging unit 12 side.
  • a part of the reference light projected on the fourth half mirror 66 is transmitted to the second imaging unit 22 side, and the second objective lens 23, the third half mirror 25, and the second half of the second objective optical unit 21 are transmitted.
  • the light passes through the imaging lens 24 in this order and enters the second imaging unit 22 side.
  • step S01 and step S06 can be omitted in the flowchart of FIG.
  • the fourth half mirror 66 is held so that the surface of the fourth half mirror 66 is in the vicinity of the focal plane of the reference light, but is held so as not to interfere with the first wafer W1 to be observed. Therefore, the surface of the first wafer W1 and the surface of the fourth half mirror 66 are not in the same plane.
  • the first imaging unit 12 is provided by the autofocus mechanism provided in the first imaging unit 12, respectively. The focus can be adjusted on the surface.
  • the position detection device 70 can detect the position with an accurate value without deviation between the measurement value of the first position detection device 10 and the measurement value of the second position detection device 20. For this reason, the position detection apparatus 70 exhibits an effect in the above-mentioned wafer bonding apparatus.
  • the first half mirror 15 is described as being disposed in the first objective optical unit 11. However, for example, between the first objective lens 13 and the second objective lens 23, the reference light is transmitted.
  • the adjustment optical system 40 may be configured to be disposed at a position where it can be reflected to the fourth half mirror 66 side.
  • the fifth embodiment is a modification of the second embodiment.
  • the configuration of the aligner 150 described with reference to FIG. 7 is slightly different from the second embodiment.
  • FIG. 12 is a side view of the aligner 250 in the present embodiment.
  • the components common to those in FIG. 7 are given the same reference numerals, and the description thereof is omitted.
  • the first table 254 and the second table 256 are configured larger than the first table 154 and the second table 156 of the second embodiment.
  • the second position detection device 20 is installed on the first table 254 so as to face the second table 256. That is, the second position detection device 20 is fixed relatively to the first table 254.
  • the first position detection device 10 is installed on the second table 256 so as to face the first table 254. That is, the first position detection device 10 is relatively fixed with respect to the second table 256.
  • the first position detection device 10 moves in the X direction, the Y direction, and the Z direction with the movement of the second table 256
  • the second position detection device 20 moves with the movement of the first table 254 in the X direction, the Y direction, Move in the Z direction.
  • the reflection when projected onto the XY plane, the reflection is performed so as to be positioned between the optical axis of the second objective lens 23 of the second position detection device 20 and the mounting surface of the first wafer W1.
  • a mirror 265 is installed.
  • the reflection surface of the reflection mirror 265 is adjusted so as to be positioned in substantially the same plane as the surface of the first wafer W1. Therefore, the reflection mirror 265 is disposed between the first objective lens 13 and the second objective lens 23 when viewed in the Z direction, but the first objective lens 13 and the second objective lens 23 are substantially coaxial. In a state of being opposed to each other, the reflection mirror 265 is not inserted therebetween.
  • two reflection mirrors 265 are installed corresponding to the two first position detection devices 10.
  • a reflection mirror 65 is inserted, and a positional deviation between the second objective optical unit 21 and the adjustment optical system 40 is achieved. In order to detect this, the reflecting mirror 65 was retracted.
  • the reflection mirror 265 by installing the reflection mirror 265 on the first table 254, the movement of the first table 254 in the X direction and the Y direction can be used to make the reflection mirror 265 the first objective optical unit 11 and the first table 254.
  • the objective lens 13 is inserted into and retracted from the optical axis OA1.
  • the second objective optical unit 21 is not adjusted by driving in the adjustment stage, but the positional deviation amount is used as a correction value.
  • the first position detection device 10 is moved instead of moving the reflection mirror 265 by the first table 254. You may make it let it. Alternatively, both the reflection mirror 265 and the first position detection device 10 may be moved so as to face each other more quickly. Alternatively, the first position detection device 10 is not installed on the second table 256, but is fixed to the floor as in the second embodiment, and only the second position detection device 20 is installed on the first table 254. You may make it install in the top.
  • the sixth embodiment is a modification of the second embodiment.
  • the configuration of the aligner 150 described with reference to FIG. 7 is slightly different from the second embodiment.
  • FIG. 13 is a configuration diagram of the side surface of the aligner 350 in the present embodiment.
  • the components common to those in FIG. 7 are given the same reference numerals, and the description thereof is omitted.
  • the first table 354 and the second table 356 are configured to be larger than the first table 154 and the second table 156 of the second embodiment.
  • the first position detection device 10 is installed on the second table 356 so as to face the second position detection device 20. That is, the first position detection device 10 is fixed relative to the second table 356, and moves in the X direction, the Y direction, and the Z direction with the movement of the second table 356.
  • the 2nd position detection apparatus 20 is being fixed to the ceiling similarly to 2nd Embodiment.
  • a fifth half mirror 365 is installed so as to be cantilevered at the end of the first table 354.
  • the reflecting surface of the fifth half mirror 365 is adjusted so as to be positioned in substantially the same plane as the surface of the first wafer W1.
  • two fifth half mirrors 365 are provided corresponding to the two first position detection devices 10.
  • a reflection mirror 65 is inserted, and a positional deviation between the second objective optical unit 21 and the adjustment optical system 40 is achieved.
  • the reflecting mirror 65 was retracted.
  • the fifth half mirror 365 is moved to the first objective optical by utilizing the movement of the first table 354 in the X direction and the Y direction.
  • the unit 11 and the first objective lens 13 are inserted into and retracted from the optical axis OA1.
  • the retraction of the fifth half mirror 365 corresponding to the retraction of the reflection mirror is performed to turn off the light source 41. Can be done immediately before or after. Then, since it is possible to adjust the displacement with the first objective optical unit 11 and the second objective optical unit facing each other, more accurate adjustment can be expected.
  • the second objective optical unit 21 When a positional deviation between the second objective optical unit 21 and the adjustment optical system 40 is detected, the second objective optical unit 21 is not adjusted by driving in the adjustment stage, but the positional deviation amount is stored as a correction value. You may comprise. In that case, when the first table 354 or the second table 356 is driven in the observation process and the alignment process of the first wafer W1 or the second wafer W2, the stored correction value is added to the driving amount. It only has to be driven.
  • the first position detection device 10 is installed on the second table 356 and the fifth half mirror 365 is installed on the first table 354.
  • this configuration is reversed.
  • the second position detection device 20 may be installed on the first table 354, and the fifth half mirror 365 may be installed on the second table 356.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un détecteur de position doté d’un premier système optique d’objectif et d’un deuxième système optique d’objectif, et capable de corriger un décalage de position de son axe optique et de détecter précisément sa position. Le détecteur de position utilise un système optique de réglage lumineux pour irradier avec une lumière de réglage le premier système optique d’objectif et le deuxième système optique d’objectif, calcule l’ampleur du décalage de position de l’axe optique du premier système optique d’objectif et de l’axe optique du deuxième système optique d’objectif, et ajuste sur cette base le décalage relatif de position. Lorsque le système optique de réglage lumineux est placé entre le premier système optique d’objectif et une première unité d’imagerie, le système optique de réglage lumineux comprend un système optique à lumière réfléchie qui divise et réfléchit la lumière de réglage en direction du premier système optique d’objectif et en direction de la première unité d’imagerie, ainsi qu’un mécanisme de rétraction qui retire le système optique à lumière réfléchie de sa position entre le premier système optique d’objectif et la première unité d’imagerie.
PCT/JP2009/002160 2008-05-15 2009-05-15 Détecteur de position et appareil de recouvrement de substrats WO2009139190A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159821A (ja) * 2010-02-01 2011-08-18 Nikon Corp 位置検出装置及びデバイスの製造方法
WO2011105326A1 (fr) * 2010-02-26 2011-09-01 東京エレクトロン株式会社 Dispositif d'assemblage
WO2011105325A1 (fr) * 2010-02-26 2011-09-01 東京エレクトロン株式会社 Procédé d'assemblage, programme et support d'enregistrement d'ordinateur
JP2014167472A (ja) * 2008-05-15 2014-09-11 Nikon Corp 基板重ね合わせ装置および位置検出装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201907047SA (en) * 2017-03-16 2019-08-27 Ev Group E Thallner Gmbh Method for bonding at least three substrates
KR20220030454A (ko) * 2020-09-01 2022-03-11 삼성전자주식회사 기판 정렬 장치 및 이를 구비하는 기판 본딩 설비

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004097996A (ja) * 2002-09-11 2004-04-02 Canon Inc 記録装置におけるアライメント機構
JP2008070218A (ja) * 2006-09-13 2008-03-27 Seiko Epson Corp アライメント装置及びアライメント方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009139190A1 (fr) * 2008-05-15 2009-11-19 株式会社ニコン Détecteur de position et appareil de recouvrement de substrats

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004097996A (ja) * 2002-09-11 2004-04-02 Canon Inc 記録装置におけるアライメント機構
JP2008070218A (ja) * 2006-09-13 2008-03-27 Seiko Epson Corp アライメント装置及びアライメント方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014167472A (ja) * 2008-05-15 2014-09-11 Nikon Corp 基板重ね合わせ装置および位置検出装置
JP2011159821A (ja) * 2010-02-01 2011-08-18 Nikon Corp 位置検出装置及びデバイスの製造方法
WO2011105326A1 (fr) * 2010-02-26 2011-09-01 東京エレクトロン株式会社 Dispositif d'assemblage
WO2011105325A1 (fr) * 2010-02-26 2011-09-01 東京エレクトロン株式会社 Procédé d'assemblage, programme et support d'enregistrement d'ordinateur
US8819923B2 (en) 2010-02-26 2014-09-02 Tokyo Electron Limited Joint apparatus
TWI474420B (zh) * 2010-02-26 2015-02-21 Tokyo Electron Ltd 接合裝置

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