WO2009126382A3 - Supercapacitors and methods of making and using same - Google Patents

Supercapacitors and methods of making and using same Download PDF

Info

Publication number
WO2009126382A3
WO2009126382A3 PCT/US2009/036184 US2009036184W WO2009126382A3 WO 2009126382 A3 WO2009126382 A3 WO 2009126382A3 US 2009036184 W US2009036184 W US 2009036184W WO 2009126382 A3 WO2009126382 A3 WO 2009126382A3
Authority
WO
WIPO (PCT)
Prior art keywords
improved
supercapacitors
making
methods
same
Prior art date
Application number
PCT/US2009/036184
Other languages
French (fr)
Other versions
WO2009126382A2 (en
Inventor
William Judson Ready
Original Assignee
Georgia Tech Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Georgia Tech Research Corporation filed Critical Georgia Tech Research Corporation
Publication of WO2009126382A2 publication Critical patent/WO2009126382A2/en
Publication of WO2009126382A3 publication Critical patent/WO2009126382A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Abstract

Described herein are improved supercapacitor components and supercapacitors made from such components. Further described are methods of making and using the improved supercapacitor components and supercapacitors made therefrom. An improved electrolyte is formed from an ionic liquid. An improved electrode is formed from carbon nanotubes. A supercapacitor can include the improved electrolyte and/or the improved electrode.
PCT/US2009/036184 2008-03-05 2009-03-05 Supercapacitors and methods of making and using same WO2009126382A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3398108P 2008-03-05 2008-03-05
US61/033,981 2008-03-05

Publications (2)

Publication Number Publication Date
WO2009126382A2 WO2009126382A2 (en) 2009-10-15
WO2009126382A3 true WO2009126382A3 (en) 2010-01-07

Family

ID=41162492

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/036184 WO2009126382A2 (en) 2008-03-05 2009-03-05 Supercapacitors and methods of making and using same

Country Status (1)

Country Link
WO (1) WO2009126382A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110205688A1 (en) * 2010-02-19 2011-08-25 Nthdegree Technologies Worldwide Inc. Multilayer Carbon Nanotube Capacitor
WO2015183762A1 (en) * 2014-05-24 2015-12-03 Georgia Tech Research Corporation Chip-scale embedded carbon nanotube electrochemical double layer supercapacitor
CN109599412B (en) * 2017-09-30 2020-09-08 清华大学 Photoelectric self-energy storage device

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020008956A1 (en) * 1997-06-04 2002-01-24 Chun-Ming Niu Fibril composite electrode for electrochemical capacitors
US20020177039A1 (en) * 2000-12-23 2002-11-28 Wen Lu Long-lived conjugated polymer electrochemical devices incorporating ionic liquids
US20030026063A1 (en) * 1999-11-25 2003-02-06 Lithiun Power Technologies, Inc. Electrochemical capacitor and methods of fabricating same
US20060087797A1 (en) * 2004-10-22 2006-04-27 Matsushita Electric Industrial Co., Ltd. Electric double layer capacitor
US20070001220A1 (en) * 2004-09-16 2007-01-04 Atomate Corporation Nanotube Transistor and Rectifying Devices
US20070093678A1 (en) * 2005-10-26 2007-04-26 Teruo Umemoto Novel perfluoroalkanesulfonamide compounds
US20070237990A1 (en) * 2003-06-02 2007-10-11 Kh Chemicals Co., Ltd. Carbon nanotube electrode comprising sulfur or metal nanoparticles as a binder and process for preparing the same
US20080014443A1 (en) * 2004-11-11 2008-01-17 Board Of Regents, The University Of Texas System Method and apparatus for transferring an array of oriented carbon nanotubes
US20080027230A1 (en) * 2004-07-16 2008-01-31 Ignatyev Nikolai Mykola Process for the Preparation of Onium Salts Having a Low Chloride Content
US20080039342A1 (en) * 2005-01-07 2008-02-14 Combimatrix Corporation Process for transition metal-catalyzed electrochemical allylic alkylation on an electrode array device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020008956A1 (en) * 1997-06-04 2002-01-24 Chun-Ming Niu Fibril composite electrode for electrochemical capacitors
US20030026063A1 (en) * 1999-11-25 2003-02-06 Lithiun Power Technologies, Inc. Electrochemical capacitor and methods of fabricating same
US20020177039A1 (en) * 2000-12-23 2002-11-28 Wen Lu Long-lived conjugated polymer electrochemical devices incorporating ionic liquids
US20070237990A1 (en) * 2003-06-02 2007-10-11 Kh Chemicals Co., Ltd. Carbon nanotube electrode comprising sulfur or metal nanoparticles as a binder and process for preparing the same
US20080027230A1 (en) * 2004-07-16 2008-01-31 Ignatyev Nikolai Mykola Process for the Preparation of Onium Salts Having a Low Chloride Content
US20070001220A1 (en) * 2004-09-16 2007-01-04 Atomate Corporation Nanotube Transistor and Rectifying Devices
US20060087797A1 (en) * 2004-10-22 2006-04-27 Matsushita Electric Industrial Co., Ltd. Electric double layer capacitor
US20080014443A1 (en) * 2004-11-11 2008-01-17 Board Of Regents, The University Of Texas System Method and apparatus for transferring an array of oriented carbon nanotubes
US20080039342A1 (en) * 2005-01-07 2008-02-14 Combimatrix Corporation Process for transition metal-catalyzed electrochemical allylic alkylation on an electrode array device
US20070093678A1 (en) * 2005-10-26 2007-04-26 Teruo Umemoto Novel perfluoroalkanesulfonamide compounds

Also Published As

Publication number Publication date
WO2009126382A2 (en) 2009-10-15

Similar Documents

Publication Publication Date Title
WO2008016990A3 (en) High performance ultracapacitors with carbon nanomaterials and ionic liquids
WO2011091092A3 (en) Microporous activated carbon for edlcs
WO2007040779A3 (en) Electrochemical double-layer capacitor using organosilicon electrolytes
WO2007125282A3 (en) Energy storage device
WO2011016903A8 (en) Bipolar electrode and supercapacitor desalination device, and methods of manufacture
WO2014160599A3 (en) Composite electrode for lithium-ion capacitor
WO2012040123A3 (en) Structure and method for extending battery life
TW200741767A (en) Capacitor and method for producing thereof
WO2010088186A3 (en) Carbon-based ultracapacitor
EP2665073A3 (en) Electrode active material, electrode and electrical storage device
WO2011133454A3 (en) Electrochemical capacitor having lithium containing electrolyte
EP2099043A4 (en) Coated electrode and organic electrolyte capacitor
WO2007013693A3 (en) Electrochemical device
WO2011109480A8 (en) Spiral wound electrical devices containing carbon nanotube-infused electrode materials and methods and apparatuses for production thereof
WO2007126436A3 (en) Fluorination of multi-layered carbon nanomaterials
WO2014170912A8 (en) All-solid-state-supercapacitor and a process for the fabrication thereof
GB2472554A (en) High performance carbon nanocomposites for ultracapacitors
WO2011029006A3 (en) Ionic liquids for use in ultracapacitor and graphene-based ultracapacitor
WO2010059865A3 (en) Apparatus and method for forming 3d nanostructure electrode for electrochemical battery or capacitor
WO2014011722A3 (en) Conductive material with graphene nanosheet material and charge-storage material in voids
WO2010030606A3 (en) Electrochemical cell having a folded electrode
EP2043116A4 (en) Method for pretreating electrochemical capacitor negative electrode, method for manufacturing the electrochemical capacitor negative electrode, and method for manufacturing electrochemical capacitor using the method for manufacturing the electrochemical capacitor negative electrode
TWI365564B (en) Cathode for fuel cell having two kinds of water-repellency and method of preparing the same and membrane electrode assembly and fuel cell comprising the same
WO2010136174A3 (en) Electrode coil
WO2008030582A3 (en) Nanopore based ion-selective electrodes

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09729695

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09729695

Country of ref document: EP

Kind code of ref document: A2