WO2009104651A1 - 白色発光装置及びこれを用いた車両用灯具 - Google Patents
白色発光装置及びこれを用いた車両用灯具 Download PDFInfo
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- WO2009104651A1 WO2009104651A1 PCT/JP2009/052818 JP2009052818W WO2009104651A1 WO 2009104651 A1 WO2009104651 A1 WO 2009104651A1 JP 2009052818 W JP2009052818 W JP 2009052818W WO 2009104651 A1 WO2009104651 A1 WO 2009104651A1
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- light emitting
- emitting device
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 120
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 238000000295 emission spectrum Methods 0.000 claims abstract description 21
- 239000000203 mixture Substances 0.000 claims description 17
- 239000012298 atmosphere Substances 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 6
- -1 europium-activated orthosilicate Chemical class 0.000 claims description 5
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000000007 visual effect Effects 0.000 abstract description 2
- 238000004020 luminiscence type Methods 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 22
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
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- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Definitions
- the present invention relates to a white light emitting device used for a vehicular lamp and a vehicular lamp using the same. More specifically, white light having high visibility within a chromaticity stipulated range of a white light source used for a vehicular lamp using a semiconductor light emitting element and a phosphor that is efficiently excited and emitted by light from the semiconductor light emitting element.
- the present invention relates to a white light emitting device capable of emitting light with high light emission intensity, and a vehicular lamp using the same.
- a white light emitting device with long life and low power consumption a semiconductor light emitting diode (LED) or a laser diode (LD) emitting blue light and a phosphor using these as an excitation light source are combined.
- LED semiconductor light emitting diode
- LD laser diode
- White light-emitting devices configured to obtain white light as a combined spectrum obtained by additive color mixing of light emission obtained from the above are attracting attention, and the use thereof is used as a white light source for vehicle lamps, particularly vehicle headlamps. Is expected.
- the white light source of the vehicular lamp is required to have an emission spectrum within a predetermined chromaticity coordinate (cx, cy) range according to chromaticity regulations. For example, according to JIS: D5500, FIG.
- the region A is represented by the following formula. ⁇ Chromaticity regulation of white light source for vehicle headlamps (JIS: D5500)> Yellow direction cx ⁇ 0.50 Blue direction cx ⁇ 0.31 Green direction cy ⁇ 0.44 and cy ⁇ 0.15 + 0.64cx Purple direction cy ⁇ 0.05 + 0.75 cx and cy ⁇ 0.382
- a light-emitting device that realizes white light emission in combination with a cerium-activated yttrium-aluminum-garnet (YAG) -based yellow light-emitting phosphor having an emission peak wavelength between ⁇ 600 nm.
- YAG cerium-activated yttrium-aluminum-garnet
- the chromaticity range that can be reproduced by a white light emitting device combining a semiconductor light emitting element that emits blue light and a yellow phosphor is the chromaticity coordinates of blue light emitted from the semiconductor light emitting element and the yellow light emitted from the phosphor.
- a white light emitting device in which a blue semiconductor light emitting element having an emission peak wavelength of 450 nm and a yellow phosphor having a dominant wavelength of 572 nm are combined. It is a straight line showing a chromaticity range.
- the visual sensitivity with which the human eye perceives brightness is about 20 times higher for yellow light than for blue light. Therefore, in the case of white light that is a mixture of blue light and yellow light, the luminous intensity is the same. However, white light with a lot of yellow light component feels brighter to human eyes. This means that the light of each chromaticity coordinate on the straight line L is felt brighter to the human eye when it has the same emission intensity, closer to the yellow phosphor side. Further, the chromaticity coordinate having the highest visibility within the range of the region A (the chromaticity regulation of the white light source of the vehicular lamp) is the intersection X between the yellow phosphor side boundary line of the region A and the straight line L.
- the coordinates of the intersection X are more on the yellow phosphor side (X ′ side in FIG. 6). It is necessary to select the light emission color of the semiconductor light emitting element and the light emission color of the phosphor so as to be close to. Specifically, when the emission peak wavelength of the semiconductor light emitting device is around 450 nm, the coordinates of the intersection X are in the range where the visibility is high, the dominant wavelength of the yellow phosphor is in the range of 575 nm to 590 nm. .
- a YAG phosphor that has a high emission intensity within a dominant wavelength range of 575 nm to 590 nm is known. Therefore, it has been difficult to realize a white light emitting device capable of emitting white light with high luminous intensity with high emission intensity.
- the present invention has been made in view of the circumstances as described above, and an object of the present invention is to use a semiconductor light emitting element and a phosphor that is efficiently excited by light of the semiconductor light emitting element to emit light, and used for a vehicle lamp. It is an object of the present invention to provide a white light emitting device capable of emitting white light with high luminous intensity within a chromaticity regulation range of a white light source, and a vehicle lamp using the same.
- the present inventors have expressed a general formula of Sr 1-xy Ba x Si 2 O 2 N 2 : Eu 2+ y , and x in the general formula is 0. .3 ⁇ x ⁇ 1.0, phosphors in which y is in the range of 0.03 ⁇ y ⁇ 0.3, and x + y is in the range of x + y ⁇ 1.0 are excited efficiently in the wavelength range of 370 to 480 nm, and the yellow component
- the inventors have newly found that visible light containing a large amount of light is emitted with high emission intensity, and the present invention has been completed by constructing a white light emitting device using this phosphor.
- the white light-emitting device is a white light-emitting device used for a vehicle lamp, a semiconductor light-emitting element having an emission spectrum peak in a wavelength range of 370 to 480 nm, and the semiconductor light-emitting device.
- the phosphor has a general formula of Sr 1-xy Ba x Si 2 O 2 N 2 : Eu 2+. y (where x is in the range of 0.3 ⁇ x ⁇ 1.0, y is in the range of 0.03 ⁇ y ⁇ 0.3, and x + y is in the range of x + y ⁇ 1.0).
- the phosphor included in the white light emitting device may have a general formula where x is in the range of 0.3 ⁇ x ⁇ 0.90, y is in the range of 0.05 ⁇ y ⁇ 0.25, and x + y is in the range of x + y ⁇ 0.98. Higher luminous flux can be obtained.
- the emission spectrum of the phosphor is not particularly limited as long as it emits visible light. However, in order to obtain warm white light having a low color temperature and good visibility, the phosphor emits light.
- the dominant wavelength of the spectrum is preferably in the wavelength range of 567 to 590 nm, more preferably 575 to 590 nm.
- the emission spectrum of the phosphor preferably has a peak wavelength in the wavelength range of 540 to 595 nm, more preferably 575 to 590 nm, and a half width of 80 nm or more from the viewpoint of color rendering.
- the phosphor is composed of a precursor of europium-activated orthosilicate prepared by first firing a mixture of SrCO 3 , BaCO 3 , SiO 2 and Eu 2 O 3 in a reducing atmosphere. It is preferably produced by secondary firing of a mixture of Si 3 N 4 and NH 4 Cl in a reducing atmosphere.
- the phosphor thus manufactured can exhibit good green to orange light emission.
- the semiconductor light emitting device is not particularly limited as long as it has an emission spectrum peak in the wavelength range of 370 to 480 nm.
- the emission spectrum peak is from 430 nm to 430 nm. It is preferably in the wavelength region of 470 nm, and a suitable example is an InGaN-based LED having good light emission characteristics in the wavelength region near 450 nm.
- the vehicular lamp according to the second embodiment of the present invention is characterized by using the white light emitting device as a light source.
- the white light emitting device of the present invention has high color rendering properties and can emit white light with high output suitable for chromaticity defined as a light source for a vehicle headlamp.
- the same effect can be obtained in a vehicular lamp using such a white light emitting device as a light source. Can be obtained.
- FIG. 1 It is a schematic sectional drawing of the white light-emitting device 1 which is embodiment of this invention. It is a figure which shows the emission spectrum (solid line) of the fluorescent substance 1, and the emission spectrum (dotted line) of the fluorescent substance 1 for a comparison. It is a figure which shows the excitation spectrum (solid line) of the fluorescent substance 1, and the excitation spectrum (dotted line) of the fluorescent substance 1 for a comparison. It is a chromaticity diagram showing the chromaticity coordinates of each phosphor and the reproducible chromaticity range of a white light emitting device using these phosphors. It is drawing which shows the emission spectrum (solid line) of Example 1 of this invention, and the emission spectrum (dotted line) of the comparative example 1. FIG. It is a chromaticity diagram showing a chromaticity range and the like that can be reproduced by a white light emitting device that combines a semiconductor light emitting element that emits blue light and a yellow phosphor.
- Light-emitting device 2 Substrate 3a: Electrode (anode) 3b: Electrode (cathode) 4: Semiconductor light emitting element 5: Mount member 6: Wire 7: Fluorescent layer
- FIG. 1 is a schematic sectional view of a white light emitting device 1 according to an embodiment of the present invention.
- a pair of electrodes 3 a (anode) and 3 b (cathode) are formed on a substrate 2.
- a semiconductor light emitting element 4 is fixed on the electrode 3 a by a mount member 5.
- the semiconductor light emitting element 4 and the electrode 3 a are energized by the mount member 5, and the semiconductor light emitting element 4 and the electrode 3 b are energized by the wire 6.
- a fluorescent layer 7 is formed on the semiconductor light emitting device.
- the substrate 2 is preferably formed of a material that has no electrical conductivity but high thermal conductivity.
- a ceramic substrate aluminum nitride substrate, alumina substrate, mullite substrate, glass ceramic substrate, a glass epoxy substrate, or the like is used. be able to.
- the electrodes 3a and 3b are conductive layers formed of a metal material such as gold or copper.
- the semiconductor light-emitting element 4 is an example of a light-emitting element used in the white light-emitting device of the present invention.
- an LED or LD that emits ultraviolet light or short-wavelength visible light can be used.
- Specific examples include InGaN-based compound semiconductors.
- the emission wavelength range of the InGaN-based compound semiconductor varies depending on the In content. When the In content is large, the emission wavelength becomes a long wavelength, and when it is small, the wavelength tends to be a short wavelength.
- the mounting member 5 is, for example, a conductive adhesive such as silver paste or gold-tin eutectic solder, and the lower surface of the semiconductor light emitting element 4 is fixed to the electrode 3a.
- the electrode 3a is electrically connected.
- the wire 6 is a conductive member such as a gold wire, and is joined to the upper surface side electrode of the semiconductor light emitting element 4 and the electrode 3b by, for example, ultrasonic thermocompression bonding, and electrically connects both.
- a phosphor described later is sealed in a film shape covering the upper surface of the semiconductor light emitting element 4 with a binder member.
- a phosphor layer 7 is prepared by preparing a phosphor paste in which a phosphor is mixed in a liquid or gel binder member, and then applying the phosphor paste on the upper surface of the semiconductor light emitting element 4. It can be formed by curing the binder member of the phosphor paste.
- the binder member for example, a silicone resin or a fluorine resin can be used.
- the phosphor used in the white light emitting device of the present invention has a general formula Sr 1-xy Ba x Si 2 O 2 N 2 : Eu 2+ y (where x is 0.3 ⁇ x ⁇ 1.0, y is 0.03 ⁇ y ⁇ 0.3 x + y is a range of x + y ⁇ 1.0), and can be obtained, for example, as follows.
- a mixed powder of SrCO 3 , BaCO 3 , SiO 2 , Eu 2 O 3 is fired in a reducing atmosphere to produce europium-activated orthosilicate as a precursor.
- the phosphor of the present invention can be obtained by pulverizing this precursor, adding Si 3 N 4 and NH 4 Cl, and firing in a reducing atmosphere.
- the fluorescent layer 7 can be mixed with one or more kinds of phosphors having emission characteristics different from those of the phosphors.
- the chromaticity of white light obtained from the white light emitting device can be adjusted by changing the blending amount of these phosphors.
- the fluorescent layer 7 can also be mixed with substances other than phosphors having various physical properties.
- the refractive index of the fluorescent layer 7 can be increased by mixing the fluorescent layer 7 with a substance having a higher refractive index than that of a binder member such as a metal oxide, a fluorine compound, or a sulfide.
- a binder member such as a metal oxide, a fluorine compound, or a sulfide.
- the refractive index can be increased without reducing the transparency of the fluorescent layer 7 by making the particle size of the substance to be mixed nanosize.
- white powder having an average particle size of about 0.3 to 2 ⁇ m such as alumina, zirconia, titanium oxide or the like, can be mixed in the fluorescent layer 7 as a light scattering agent. Thereby, unevenness in luminance and chromaticity of the light emitting surface can be prevented.
- the semiconductor light emitting element 4 when a drive current is applied to the electrodes 3a and 3b, the semiconductor light emitting element 4 is energized, and the semiconductor light emitting element 4 emits light in a specific wavelength region including blue light toward the fluorescent layer 7. Irradiate. Part of this light is used to excite the phosphor in the fluorescent layer 7, and the remaining light passes through the fluorescent layer 7 and is directly irradiated to the outside. The phosphor is excited by light from the semiconductor light emitting element 4 and emits light in a specific wavelength range.
- White light can be obtained by additively mixing the light from the semiconductor light emitting element 4 that has passed through the fluorescent layer 7 and the light emitted from the phosphor.
- the white light emitting device 1 will be described in more detail with reference to examples of the light emitting device.
- description of the raw material of the following light-emitting device, a manufacturing method, the chemical composition of fluorescent substance, etc. does not limit this invention at all.
- ⁇ Phosphor 1> A phosphor represented by Sr 0.425 Ba 0.425 Si 2 O 2 N 2 : Eu 2+ 0.15 .
- the phosphor 1 is manufactured by first weighing 1.321 g of SrCO 3 , 1.766 g of BaCO 3 , 0.556 g of Eu 2 O 3 , and 0.632 g of SiO 2 , and putting each raw material in an alumina mortar. The mixture was pulverized for about 20 minutes, and this mixture was put in an alumina crucible, capped, and calcined in a reducing atmosphere H 2 / N 2 (5/95) in an electric furnace at 1100 ° C.
- ⁇ Phosphor 2> A phosphor represented by Sr 0.05 Ba 0.75 Si 2 O 2 N 2 : Eu 2+ 0.2 .
- the phosphor 2 was manufactured by first weighing 0.114 g of SrCO 3 , 2.277 g of BaCO 3 , 0.541 g of Eu 2 O 3, and 0.462 g of SiO 2 , and putting each raw material in an alumina mortar. The mixture was pulverized for about 20 minutes, and this mixture was put in an alumina crucible, covered, and calcined in a reducing atmosphere H 2 / N 2 (5/95) in an electric furnace at 1100 ° C. for 3 hours, and the precursor Sr 0.1 Ba 1 .5 SiO 4 : Eu 2+ 0.4 was obtained.
- ⁇ Phosphor 3> A phosphor represented by Sr 0.225 Ba 0.675 Si 2 O 2 N 2 : Eu 2+ 0.1 .
- Production of the phosphor 3 first, a SrCO 3 0.511 g, a BaCO 3 2.049G, the Eu 2 O 3 0.271 g, a SiO 2 0.462 g were weighed, put into the raw materials into an alumina mortar The mixture was pulverized for about 20 minutes, the mixture was put in an alumina crucible, the lid was closed, and the mixture was calcined in a reducing atmosphere H 2 / N 2 (5/95), 1100 ° C. for 3 hours, and the precursor Sr 0.45 Ba 1 .35 SiO 4 : Eu 2+ 0.2 was obtained.
- ⁇ Reference phosphor 1> As reference phosphor 1, a phosphor represented by Sr 0.93 Si 2 O 2 N 2 : Eu 2+ 0.07 was prepared.
- the phosphor 1 for reference is manufactured by first weighing 3.051 g of SrCO 3 , 0.274 g of Eu 2 O 3 and 0.668 g of SiO 2 , putting each raw material in an alumina mortar and mixing and grinding for about 20 minutes. Then, the mixture was put in an alumina crucible, covered, and calcined in a reducing atmosphere H 2 / N 2 (5/95) in an electric furnace at 1100 ° C. for 3 hours, and the precursor Sr 1.86 SiO 4 : Eu 2+ 0. 14 was obtained.
- a phosphor represented by Sr 0.67 Ba 0.25 Si 2 O 2 N 2 : Eu 2+ 0.08 was prepared.
- the preparation of the reference phosphor 2 first, a SrCO 3 1.517g, the BaCO 3 0.759 g, the Eu 2 O 3 0.217 g, a SiO 2 0.462 g were weighed, each raw material alumina mortar The mixture was pulverized for about 20 minutes, and the mixture was put in an alumina crucible, capped, calcined in a reducing atmosphere H 2 / N 2 (5/95), 1100 ° C. for 3 hours, and precursor Sr 1.34. Ba 0.5 SiO 4 : Eu 2+ 0.16 was obtained.
- ⁇ Comparative phosphor 1> As the comparative phosphor 1, a cerium-activated yttrium aluminum garnet phosphor (P46-Y3, manufactured by Kasei Optonics) was used. As an example of a white light emitting device capable of emitting white light meeting such chromaticity regulations with high emission intensity, an InGaN-based semiconductor light emitting element having an emission peak wavelength in a blue wavelength range (420 to 490 nm), 510 2. Description of the Related Art A light-emitting device that realizes white light emission by combining a cerium-activated yttrium aluminum garnet (YAG) -based yellow phosphor having an emission peak wavelength between ⁇ 600 nm is known. This phosphor is known as a phosphor that emits yellow light when excited by light in the blue wavelength region.
- YAG cerium-activated yttrium aluminum garnet
- This phosphor is known as a phosphor that emits yellow light when excited by light in the blue wavelength region
- Table 1 shows the integrated emission intensity ratio, chromaticity coordinates (cx, cy), and dominant wavelength (nm) of each phosphor under 450 nm excitation.
- the integrated emission intensity ratio is shown as a relative value when the integrated emission intensity of the comparative phosphor 1 under 450 nm excitation is 100.
- FIG. 2 shows an emission spectrum (solid line) of phosphor 1 under excitation of 450 nm and an emission spectrum (dotted line) of phosphor 1 for comparison. Note that the vertical axis of the graph in FIG. 2 indicates the relative light emission intensity of the phosphor 1 and the comparative phosphor 1.
- the phosphor 1 has an emission spectrum peak in the wavelength range of 560 to 580 nm and a full width at half maximum of 90 nm or more. From this, it can be seen that the phosphor 1 emits yellow light which is a complementary color of blue.
- FIG. 3 shows the excitation spectrum (solid line) of the phosphor 1 and the excitation spectrum (dotted line) of the comparative phosphor 1.
- the vertical axis of the graph in FIG. 3 indicates the relative excitation intensity of the phosphor 1 and the comparative phosphor 1. From FIG. 3, it can be seen that phosphor 1 has a broad excitation spectrum peak at 400 to 470 nm. From this, it can be seen that the phosphor 1 is efficiently excited by the light of the semiconductor light emitting element having the emission spectrum peak in the wavelength range of 370 to 480 nm and can emit light.
- L1 to L3 (phosphors 1 to 3) and L6 (comparative phosphor 1) are the range of the area A indicating the range of the chromaticity regulation (JIS: D5500) of the white light source of the vehicle headlamp. Therefore, it is expected that white light that satisfies the chromaticity specification can be emitted by combination with a semiconductor light emitting element that emits blue light. On the other hand, since L4 and L5 do not pass through the range of the region A, it is expected that white light that satisfies the chromaticity rule cannot be emitted.
- the point with the highest visibility within the region A is the boundary on the yellow phosphor side of the region A This is points X1 to X3 and X6 which are the intersections of the line and the straight lines L1 to L3 and L6.
- Table 2 shows the chromaticity coordinates of points X1 to X3 and X6, color difference ⁇ : color difference between each point and the chromaticity coordinate (point B) of the semiconductor light emitting element, color difference ⁇ : chromaticity coordinate between each point and each phosphor ( A color difference (color difference ⁇ ) and a color difference ratio (color difference ⁇ : color difference ⁇ ) from the points Y1 to Y3, Y6) are shown. From Table 2 and FIG. 4, the points X1 to X3 (phosphors 1 to 3) all have a larger ratio of the color difference ⁇ to the color difference ⁇ than the point X6 (phosphor 1 for comparison), and the chromaticity of the phosphor.
- the structure of the light-emitting device of an Example is explained in full detail.
- the structure of the following light-emitting device is a structure common to all the Examples and the comparative examples except the kind of the used phosphor.
- the light emitting device of this example uses the following specific configuration in the above embodiment.
- an aluminum nitride substrate was used as the substrate 2, and an electrode 3a (anode) and an electrode 3b (cathode) were formed using gold on the surface.
- a 1 mm square LED (SemiLEDs: MvpLEDTMSL-V-B40AC) having a light emission peak at 450 nm is used as the semiconductor light emitting element 4, and a silver paste (Able) dropped using a dispenser on the electrode 3 a (anode).
- the lower surface of the LED was adhered onto a stick (84-1LMISS4), and the silver paste was cured at 175 ° C. for 1 hour.
- a ⁇ 45 ⁇ m gold wire was used as the wire 6, and this gold wire was bonded to the upper surface side electrode of the LED and the electrode 3b (cathode) by ultrasonic thermocompression bonding.
- a silicone resin manufactured by Toray Dow Corning Silicone Co., Ltd .: JCR6140
- JCR6140 a 30 vol% phosphor paste in which various phosphors are mixed is prepared, and the phosphor paste is applied to the upper surface of the semiconductor light emitting device 4. did.
- the coating amount was applied while adjusting the film thickness so as to obtain a desired chromaticity.
- the phosphor layer 7 was formed by fixing the applied phosphor paste by step curing for 40 minutes in an 80 ° C. environment and then for 60 minutes in a 150 ° C. environment.
- Example 1 In Example 1, a phosphor paste was prepared using the phosphor 1, and a light emitting device was prepared using the phosphor paste so that the coating amount was adjusted to be close to the point X1 in the chromaticity diagram of FIG. .
- Example 2 In Example 2, a phosphor paste was prepared using the phosphor 2, and a light emitting device was prepared using the phosphor paste so that the coating amount was adjusted to be close to the point X2 in the chromaticity diagram of FIG. .
- Example 3 In Example 3, a phosphor paste was prepared using the phosphor 3, and a light emitting device was prepared using the phosphor paste so that the coating amount was adjusted to be close to the point X3 in the chromaticity diagram of FIG. .
- ⁇ Comparative Example 1> In this comparative example 1, a phosphor paste was prepared using the comparative phosphor 1, and a light emitting device was adjusted using the phosphor paste so that the coating amount was close to the point X6 in the chromaticity diagram of FIG. Produced.
- Each light-emitting device was caused to emit light by applying a current of 50 mA in the integrating sphere, and the light flux and the spectral spectrum were measured with a spectroscope (CAS 140B-152 manufactured by Instrument System). The measurement results will be described in detail below.
- Table 3 shows the luminous flux ratio, chromaticity coordinates (cx, cy), and color temperature (K) when a drive current of 50 mA is applied to each light emitting device.
- the luminous flux ratio is shown as a relative value where the luminous flux is 100 when a drive current of 50 mA is applied to the light emitting device of Comparative Example 1.
- the phosphor of the present invention has been described according to the embodiments. However, it is needless to say that the present invention is not limited to these embodiments, and various modifications, improvements, combinations, usage forms, and the like can be considered.
- the white light emitting device of the present invention can be used for a vehicular lamp having a white light source having a functional color, such as a head lamp, a fog lamp, a cornering lamp, a license plate lamp, a backup lamp, and a room lamp. Further, the white light emitting device of the present invention is a vehicular lamp that is a combination of a white light source and a color filter, and can be used for a functional color other than a white system, for example, a tail lamp, a stop lamp, a turn signal lamp, or the like. .
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Abstract
Description
ここで、車両用灯具の白色光源は、色度規定により発光スペクトルが所定の色度座標(cx,cy)の範囲内にあることが要求されており、例えば、JIS:D5500によれば図6の色度図に示す領域Aの範囲内にあることが要求される。
尚、領域Aは下記式によって表される。
<車両用前照灯の白色光源の色度規定(JIS:D5500)>
黄色方向 cx≦0.50
青色方向 cx≧0.31
緑色方向 cy≦0.44 及び cy≦0.15+0.64cx
紫色方向 cy≧0.05+0.75cx 及び cy≧0.382
図6の色度図に示す直線Lは、このような直線の一例であり、発光ピーク波長が450nmの青色半導体発光素子とドミナント波長が572nmの黄色蛍光体とを組み合わせた白色発光装置によって再現可能な色度範囲を示す直線である。
具体的には、半導体発光素子の発光ピーク波長を450nm前後とした場合に、前記交差点Xの座標が視感度の高い範囲となるのは、黄色蛍光体のドミナント波長が575nm~590nmの範囲である。
を得ることができる。
2:基板
3a:電極(陽極)
3b:電極(陰極)
4:半導体発光素子
5:マウント部材
6:ワイヤー
7:蛍光層
SrCO3、BaCO3、SiO2、Eu2O3の混合粉末を還元雰囲気中で焼成し、ユーロピウム付活のオルソ珪酸塩を前駆体として作製する。この前駆体を粉砕し、Si3N4とNH4Clを加え、還元雰囲気中で焼成することで本発明の蛍光体を得ることができる。
また、アルミナ、ジルコニア、酸化チタン等の平均粒径0.3~2μm程度の白色粉末を光散乱剤として蛍光層7に混入することもできる。これにより、発光面の輝度、色度むらを防止することができる。
Sr0.425Ba0.425Si2O2N2:Eu2+ 0.15で表される蛍光体。
本蛍光体1の製造は、まず、SrCO3を1.321g、BaCO3を1.766g、 Eu2O3を0.556g、SiO2を0.632gそれぞれ秤量し、各原料をアルミナ乳鉢に入れ約20分混合粉砕し、この混合物をアルミナ坩堝に入れ蓋をし、還元雰囲気H2/N2(5/95)、1100℃の電気炉で3時間焼成し、前駆体Sr0.85Ba0.85SiO4:Eu2+ 0.30を得た。
次に、上記前駆体を3.289g、Si3N4を1.403g、NH4Clをフラックスとして0.047gそれぞれ秤量し、各原料をアルミナ乳鉢に入れ約20分混合粉砕し、この混合物をアルミナ坩堝に入れ蓋をし、還元雰囲気H2/N2(5/95)、1200~1400℃で6時間焼成し、蛍光体1を得た。
Sr0.05Ba0.75Si2O2N2:Eu2+ 0.2で表される蛍光体。
本蛍光体2の製造は、まず、SrCO3を0.114g、BaCO3を2.277g、Eu2O3を0.541g、SiO2を0.462gそれぞれ秤量し、各原料をアルミナ乳鉢に入れ約20分混合粉砕し、この混合物をアルミナ坩堝に入れ蓋をし、還元雰囲気H2/N2(5/95)、1100℃の電気炉で3時間焼成し、前駆体Sr0.1Ba1.5SiO4:Eu2+ 0.4を得た。
次に、上記前駆体を2.451g、Si3N4を0.935g、NH4Clをフラックスとして0.034gそれぞれ秤量し、各原料をアルミナ乳鉢に入れ約20分混合粉砕し、この混合物をアルミナ坩堝に入れ蓋をし、還元雰囲気H2/N2(5/95)、1200~1400℃で6時間焼成し、蛍光体2を得た。
Sr0.225Ba0.675Si2O2N2:Eu2+ 0.1で表される蛍光体。
本蛍光体3の製造は、まず、SrCO3を0.511g、BaCO3を2.049g、Eu2O3を0.271g、SiO2を0.462gそれぞれ秤量し、各原料をアルミナ乳鉢に入れ約20分混合粉砕し、この混合物をアルミナ坩堝に入れ蓋をし、還元雰囲気H2/N2(5/95)、1100℃の電気炉で3時間焼成し、前駆体Sr0.45Ba1.35SiO4:Eu2+ 0.2を得た。
次に、上記前駆体を2.315g、Si3N4を0.935g、NH4Clをフラックスとして0.03gそれぞれ秤量し、各原料をアルミナ乳鉢に入れ約20分混合粉砕し、この混合物をアルミナ坩堝に入れ蓋をし、還元雰囲気H2/N2(5/95)、1200~1400℃で6時間焼成し、蛍光体3を得た。
参考用蛍光体1として、Sr0.93Si2O2N2:Eu2+ 0.07で表される蛍光体を作製した。
この参考用蛍光体1の製造は、まず、SrCO3 を3.051g、Eu2O3 を0.274g、SiO2 を0.668gそれぞれ秤量し、各原料をアルミナ乳鉢に入れ約20分混合粉砕し、この混合物をアルミナ坩堝に入れ蓋をし、還元雰囲気H2/N2(5/95)、1100℃の電気炉で3時間焼成し、前駆体Sr1.86SiO4:Eu2+ 0.14を得た。
次に、上記前駆体を2.763g、Si3N4を1.402g、NH4Clをフラックスとして0.04gそれぞれ秤量し、各原料をアルミナ乳鉢に入れ約20分混合粉砕し、この混合物をアルミナ坩堝に入れ蓋をし、還元雰囲気H2/N2(5/95)、1200~1400℃で6時間焼成し、参考用蛍光体1を得た。
参考用蛍光体2として、Sr0.67Ba0.25Si2O2N2:Eu2+ 0.08で表される蛍光体を作製。
この参考用蛍光体2の製造は、まず、SrCO3 を1.517g、BaCO3 を0.759g、Eu2O3 を0.217g、SiO2 を0.462gそれぞれ秤量し、各原料をアルミナ乳鉢に入れ約20分混合粉砕し、この混合物をアルミナ坩堝に入れ蓋をし、還元雰囲気H2/N2(5/95)、1100℃の電気炉で3時間焼成し、前駆体Sr1.34Ba0.5SiO4:Eu2+ 0.16を得た。
次に、上記前駆体を2.016g、Si3N4を0.935g、NH4Clをフラックスとして0.03gそれぞれ秤量し、各原料をアルミナ乳鉢に入れ約20分混合粉砕し、この混合物をアルミナ坩堝に入れ蓋をし、還元雰囲気H2/N2(5/95)、1200~1400℃で6時間焼成し、参考用蛍光体2を得た。
比較用蛍光体1としてセリウム付活のイットリウム・アルミニウム・ガーネット蛍光体(化成オプトニクス製:P46-Y3)を用いた。
このような色度規定に合致した白色光を高い発光強度で発光可能とした白色発光装置の例として、青色波長域(420~490nm)に発光ピーク波長を持つInGaN系の半導体発光素子と、510~600nmの間に発光ピーク波長を持つセリウム付活のイットリウム・アルミニウム・ガーネット(YAG)系の黄色蛍光体とを組み合わせて白色発光を実現する発光装置が知られている。
この蛍光体は、青色波長域の光で励起し黄色発光する蛍光体として知られている。
以下、蛍光体1~3、参考用蛍光体1~2、及び比較用蛍光体1について測定した450nm励起下における各種の発光特性を詳述する。
尚、積分発光強度比は、450nm励起下における比較用蛍光体1の積分発光強度を100としたときの相対値として示す。
また、蛍光体1~3は、色度座標がcx=0.47~0.52、cy=0.47~0.51の範囲内にあり、ドミナント波長が比較用蛍光体1に比べて長波長となる575nm~581nmの波長域にあることが分かる。
尚、図2におけるグラフの縦軸は蛍光体1と比較用蛍光体1の相対的な発光強度を示すものである。
この図2から、蛍光体1は、発光スペクトルのピークが560~580nmの波長域にあり、半値幅が90nm以上であることが分かる。このことから、蛍光体1は青色の補色である黄色に発光することが分かる。
尚、図3におけるグラフの縦軸は蛍光体1と比較用蛍光体1の相対的な励起強度を示すものである。
この図3から、蛍光体1は、励起スペクトルのピークが400~470nmにブロードに存在することが分かる。
このことから、蛍光体1は、370~480nmの波長域に発光スペクトルのピークを持つ半導体発光素子の光により効率良く励起され、発光可能であることが分かる。
図4に示すように、発光スペクトルのピーク波長が450nmである半導体発光素子と各蛍光体の加色混合によって再現可能な色度範囲は、当該半導体発光素子の色度座標ポイントB(cx=0.152、cy=0.025)と、表1に示した各蛍光体の色度座標であるポイントY1~Y6とを結んだ直線(点線)L1~L6により近似的に表すことができる。
この図4より、L1~L3(蛍光体1~3)及びL6(比較用蛍光体1)は車両用前照灯の白色光源の色度規定(JIS:D5500)の範囲を示す領域Aの範囲を通過するため、青色発光の半導体発光素子との組み合わせにより当該色度規定を満たす白色光の発光が可能であることが予想される。
一方、L4及びL5は領域Aの範囲を通過しないため当該色度規定を満たす白色光の発光が不可能であることが予想される。
表2に、ポイントX1~3、X6の色度座標、色差α:各ポイントと半導体発光素子の色度座標(ポイントB)との色差、色差β:各ポイントと各蛍光体の色度座標(ポイントY1~Y3、Y6)との色差(色差β)、色差比(色差α:色差β)を示す。
この表2及び図4より、ポイントX1~X3(蛍光体1~3)はポイントX6(比較用蛍光体1)に比べて、いずれも色差β対する色差αの比率が大きく、蛍光体の色度座標側に近いことが分かる。このことから、蛍光体1~3と青色発光の半導体発光素子との組み合わせることにより、領域Aの範囲において比較用蛍光体1を用いた場合よりもより視感度の高い白色光の発光が可能であることが予想される。
尚、下記発光装置の構成は、用いた蛍光体の種類を除き、全ての実施例及び比較例について共通の構成である。
本実施例の発光装置は、上記の実施形態において下記の具体的な構成を用いたものである。
まず、基板2として窒化アルミニウム基板を用い、その表面に金を用いて電極3a(陽極)及び電極3b(陰極)を形成した。
また、半導体発光素子4として、450nmに発光ピークを持つ1mm四方のLED(SemiLEDs社製:MvpLEDTMSL-V-B40AC)を用い、前記電極3a(陽極)上にディスペンサーを用いて滴下した銀ペースト(エイブルスティック社製:84-1LMISR4)の上に当該LEDの下面を接着させ、当該銀ペーストを175℃環境下で1時間硬化させた。
また、ワイヤー6としてΦ45μmの金ワイヤーを用い、この金ワイヤーを超音波熱圧着にてLEDの上面側電極及び電極3b(陰極)に接合した。
また、バインダー部材としてシリコーン樹脂(東レダウコーニングシリコーン社製:JCR6140)を用い、これに各種蛍光体を混入した30vol%蛍光体ペーストを作製し、当該蛍光体ペーストを半導体発光素子4の上面に塗布した。塗布量は所望の色度が得られるように膜厚を調整しながら塗布した。
塗布した蛍光体ペーストを80℃環境下で40分、その後に150℃環境下で60分のステップ硬化にて固定化することで蛍光層7を形成した。
<実施例1>
本実施例1は、前記蛍光体1を用いて蛍光体ペーストを作製し、当該蛍光体ペーストを用いて塗布量を図4の色度図におけるポイントX1に近づけるように調整した発光装置を作製した。
<実施例2>
本実施例2は、前記蛍光体2を用いて蛍光体ペーストを作製し、当該蛍光体ペーストを用いて塗布量を図4の色度図におけるポイントX2に近づけるように調整した発光装置を作製した。
<実施例3>
本実施例3は、前記蛍光体3を用いて蛍光体ペーストを作製し、当該蛍光体ペーストを用いて塗布量を図4の色度図におけるポイントX3に近づけるように調整した発光装置を作製した。
<比較例1>
本比較例1は、前記比較用蛍光体1を用いて蛍光体ペーストを作製し、当該蛍光体ペーストを用いて塗布量を図4の色度図におけるポイントX6に近づけるように調整した発光装置を作製した。
各発光装置を積分球内で50mAの電流を投入し発光させ、分光器(Instrument System社製 CAS140B-152)で光束及び分光スペクトルを測定した。その測定結果を以下詳述する。
尚、光束比は、比較例1の発光装置に50mAの駆動電流を印加したときの光束を100とする相対値として示す。
また、いずれの実施例の色度座標も図4の色度図における領域Aの範囲にあり、すなわち車両用灯具の白色光源の色度規定に合致した白色光であり、且つ比較例1に対して蛍光体側に近い位置にある、すなわち視感度が高い白色光であることが分かる。
更に、比較例1の色温度が4000K以上であるのに対し、実施例1~3の色温度はいずれも4000K以下の暖系色であることが分かる。
また、本発明の白色発光装置は、白色光源とカラーフィルター等を組み合わせた車両用灯具であって機能色が白色系以外のもの、例えばテールランプ、ストップランプ、ターンシグナルランプ等に利用することもできる。
Claims (9)
- 車両用灯具に用いられる白色発光装置であって、370~480nmの波長域に発光スペクトルのピークを持つ半導体発光素子と、前記半導体発光素子の発する光により励起され可視光を発光する少なくとも1種以上の蛍光体を備え、
前記蛍光体は、Sr1-x-yBaxSi2O2N2:Eu2+ yの一般式で表され、前記一般式のxは0.3<x<1.0、yは0.03<y<0.3、x+yはx+y<1.0の範囲であることを特徴とする白色発光装置。 - 前記一般式のxが0.3<x<0.90、yが0.05<y<0.25、x+yがx+y<0.98の範囲であることを特徴とする請求項1に記載の白色発光装置。
- 前記蛍光体の発光スペクトルのドミナント波長が567~590nmの波長域にあることを特徴とする請求項1~2のいずれかに記載の白色発光装置。
- 前記蛍光体の発光スペクトルのドミナント波長が575~590nmの波長域にあることを特徴とする請求項3に記載の白色発光装置。
- 前記蛍光体の発光スペクトルのピーク波長が540~595nmの波長域にあり、半値幅が80nm以上であることを特徴とする請求項1~4のいずれかに記載の白色発光装置。
- 前記蛍光体の発光スペクトルのピーク波長が575~590nmの波長域にあることを特徴とする請求項5に記載の白色発光装置。
- 前記蛍光体は、SrCO3、BaCO3、SiO2及びEu2O3の混合物を還元雰囲気中で1次焼成して作製したユーロピウム付活のオルソ珪酸塩を前駆体とし、この前駆体とSi3N4及びNH4Clの混合物を還元雰囲気中で2次焼成することで得られることを特徴とする請求項1~6のいずれかに記載の白色発光装置。
- 前記半導体発光素子のピーク波長が430nm~470nmの波長域にあるInGaN系LEDであることを特徴とする請求項1~7のいずれかに記載の白色発光装置。
- 請求項1~8のいずれかに記載の白色発光装置を光源とした車両用灯具。
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JP2009554352A JP5635268B2 (ja) | 2008-02-18 | 2009-02-18 | 白色発光装置及びこれを用いた車両用灯具 |
EP09711859.0A EP2246909B1 (en) | 2008-02-18 | 2009-02-18 | White light emitting device and lighting fitting for vehicles using the white light emitting device |
KR1020107017812A KR101245005B1 (ko) | 2008-02-18 | 2009-02-18 | 백색 발광 장치 및 이것을 이용한 차량용 등기구 |
US12/866,770 US8299487B2 (en) | 2008-02-18 | 2009-02-18 | White light emitting device and vehicle lamp using the same |
CN2009801052994A CN101946336B (zh) | 2008-02-18 | 2009-02-18 | 白色发光装置以及使用该白色发光装置的车辆用灯具 |
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US20120326196A1 (en) * | 2010-03-31 | 2012-12-27 | Osram Sylvania, Inc. | Phosphor and leds containing same |
JP2013163724A (ja) * | 2012-02-09 | 2013-08-22 | Denki Kagaku Kogyo Kk | 蛍光体及び発光装置 |
JP2017212340A (ja) * | 2016-05-25 | 2017-11-30 | スタンレー電気株式会社 | 発光ダイオード装置 |
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EP3417203B1 (en) | 2016-02-23 | 2020-12-16 | MLS Automotive, Inc. | Vehicle lighting assembly and method for achieving yellow colored turn signals |
KR101907756B1 (ko) | 2016-12-07 | 2018-10-12 | 신라대학교 산학협력단 | 결함에 의하여 발광하는 자기 발광 형광체 및 그 제조 방법 |
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JPWO2009104651A1 (ja) | 2011-06-23 |
KR20100112619A (ko) | 2010-10-19 |
CN101946336B (zh) | 2012-06-27 |
US20100320495A1 (en) | 2010-12-23 |
EP2246909A1 (en) | 2010-11-03 |
CN101946336A (zh) | 2011-01-12 |
EP2246909A4 (en) | 2012-11-21 |
US8299487B2 (en) | 2012-10-30 |
EP2246909B1 (en) | 2015-07-22 |
KR101245005B1 (ko) | 2013-03-18 |
JP5635268B2 (ja) | 2014-12-03 |
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