WO2009092097A1 - Concentric hollow cathode magnetron sputter source - Google Patents

Concentric hollow cathode magnetron sputter source Download PDF

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Publication number
WO2009092097A1
WO2009092097A1 PCT/US2009/031550 US2009031550W WO2009092097A1 WO 2009092097 A1 WO2009092097 A1 WO 2009092097A1 US 2009031550 W US2009031550 W US 2009031550W WO 2009092097 A1 WO2009092097 A1 WO 2009092097A1
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WO
WIPO (PCT)
Prior art keywords
magnets
sputter source
ring
concentric
magnetic field
Prior art date
Application number
PCT/US2009/031550
Other languages
French (fr)
Inventor
Daniel Brors
Dominik Schmidt
Michael Hawran
Dave Correia
Art Shulenberger
Original Assignee
4D-S Pty Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 4D-S Pty Ltd. filed Critical 4D-S Pty Ltd.
Priority to CN2009801545760A priority Critical patent/CN102282286A/en
Priority to EP09702653A priority patent/EP2387625A1/en
Priority to JP2011545340A priority patent/JP2012515259A/en
Publication of WO2009092097A1 publication Critical patent/WO2009092097A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Definitions

  • the present invention relates generally to a sputter source and more specifically to a magnetron sputter source, the deposition of materials and more specifically to utilizing a sputter source for the deposition of the material.
  • FIG. 1 The deposition of materials using a magnetron enhanced sputter source has been used for more than 30 years.
  • the cross section of a typical circular magnetron sputter source is shown in Figure 1.
  • the sputter source 100 is placed in a vacuum chamber 101.
  • the vacuum chamber 101 is attached to a vacuum pump (not shown) through a port 109.
  • Magnets 106 are arranged in 2 concentric rings and attached to an iron yoke 107 resulting in a strong magnetic field 104 that penetrates the target 108 and is largely parallel 1 10 with the target surface 109.
  • a power supply (not shown) DC or RF is electrically attached from the chamber 101 to the target 108.
  • a gas typically argon, is metered into the vacuum chamber 101 through a MFC 1 1 1 to pressure of typically 3X1 OE-3 to 1 X 10E-2Torr. The power supply is turned on and the voltage is raised to 300-400 volts for a DC power supply and typically 1 -10 KW for an RF supply resulting in sputtering of the target surface 109.
  • the target material 108 is deposited onto the substrate 105 which is held in place by a chuck 03, which is typically temperature controlled. Such an arrangement results in a 10 to 100 fold increase in the deposition rate of material from the target 108 onto the substrate surface 105 when compared to sputtering without magnets 106.
  • FIG. 2 An example is shown in Fig. 2 and is known a hollow cathode 200.
  • the hollow cathode 200 is placed in a vacuum chamber 101 which is attached to a vacuum pump (not shown) and has a gas injection port 110 the same as in Fig. 1.
  • the hollow cathode 200 is placed in a vacuum chamber 101 which is attached to a vacuum pump (not shown) and has a gas injection port 1 10 the same as in Fig. 1.
  • the hollow cathode 200 consists of cylindrical housing 202. Two rings of magnets 206 are attached to an iron yoke 207 resulting in a strong magnetic field 204 that penetrates the target 208.
  • a DC or RF power supply (not shown) is attached from the vacuum chamber 101 to the target 208 as was done in Fig. 1.
  • Argon is introduced into the vacuum chamber 101 through port 1 10 and typically metered by a MFC 1 1 1 to a pressure of 3-10 X 1 OE-3 Torr.
  • the power supply is turned on to 300-400 volts for a DC supply and typically 1 -10 KW for an RF supply.
  • Sputtering occurs where the magnetic field 210 is largely parallel to the target surface 209.
  • the deposition rate onto the substrate surface is many times greater than the deposition rate without magnets.
  • the hollow cathode 200 results in directional sputtering and is used for sputtering onto substrates with features with aspect ratios, i.e. >5:1.
  • a new sputter source is disclosed that allows for high rates of deposition at pressures one or two orders of magnitude lower than has previously been obtained. This results in denser films with reduced ion and electron damage to the substrate.
  • FIG. 1 shows an example of a cross section of a typical circular magnetron sputter source.
  • FlG, 2 shows an example of prior art which is known as a hollow cathode.
  • FlG. 3 shows the present invention, a cross section of the sputter source which consists of a circular housing.
  • FIG. 4 is a top view of the present invention and shows the inner ring of magnets and outer ring of magnets arranged in a hexagon.
  • the present invention relates generally to a sputter source and more specifically to a magnetron sputter source, the deposition of materials and more specifically to utilizing a sputter source for the deposition of the material.
  • the following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiments and the generic principles and features described herein will be readily apparent to those skilled in the art. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features described herein.
  • the present invention is a "Concentric Hollow Cathode Sputter Source" and is shown in Fig. 3.
  • Fig. 3 is a cross section of the sputter source 300 which consists of a circular housing 302.
  • a outer hexagon ring of two rows of magnets 306, 319 are attached to an iron yoke 302 and an inner hexagonal ring of two rows of magnets 306, 319 are attached to an iron yoke 302 and an inner hexagonal ring of two rows of magnets 313, 318 are also attached io iron yoke 302.
  • the iron yoke 302 is the return path for the magnetic flux from all the magnets.
  • Fig. 4 is a top view of the present invention and shows the inner ring of magnets 313 and outer ring of magnets 306 arranged in a hexagon. Other configurations are possible such as 3 sides, 4 sides, etc., however 6 sides is the preferred configuration. Al! the magnets are attached to the iron yoke 307,
  • the magnetic field has three components.
  • the first component is a magnetic field 314 from the upper row of outer magnets 319 to the lower row of outer magnets 306 that penetrates the outer row of targets 312 and is largely parallel to the outer target surface 309 which traps ions near the surface 309 and results in a high rate of sputtering from the outer target surfaces 312.
  • a second magnetic field 316 is generated from [he inner row of upper magnets 318 to the inner row of low magnets 313 which penetrates the inner targets 308 and is largely parallel to the inner target surface 322 and traps ions at the inner target surface 322 and results in a high rate of sputtering from the inner target surfaces 322.
  • the third magnetic field 304 is generated from the outer ring of upper magnets 319 to the inner ring of magnets 318.
  • a similar magnetic field 321 is generated at the bottom of the cavity 315 between the outer ring of lower magnets 306 and the inner ring of lower magnets 313.
  • Magnetic fields 304 and 321 trap ions and electrons within the cavity 315 which results in increasing the ion density within the cavity 315 and allows sputtering at pressures of 2 X 10E-5 to 1 X 10E-2 Torr and preferably at 5 X 10E-5 to 5 X E-4 Torr.
  • Other magnetron sputter sources such as the planar source 100 and the hollow cathode 200 require pressures from 3 X 10E-3 to 1 X 10E-2 Torr.
  • this concentric hollow source 300 results in denser sputtered films with less argon or any other gases used in the sputtering process trapped in the deposited film.
  • the lower pressure also increases the mean free path in [he vacuum reducing the collusions between the qas molecules and the sputtered materia! resulting in an increase in the average energy of the arriving sputtered material at the substrate surface, which also increases the deposited material density.
  • a second advantage of trapping the ions and electrons within the cavity 315 is that the number of ions and electrons reaching the substrate surface 105 is greatly reduced as compared to the planar source 100 or the hollow cathode 200. The reduced ions and electrons reaching the substrate surface 105 greatly reduces ion and electron damage to semiconductor devices fabricated on the substrate surface 105.
  • the present invention has been described in accordance with the embodiments shown, one of ordinary skill in the art will readily recognize that there could be variations to the embodiments and those variations would be within the spirit and scope of the present invention.
  • the splice is preferably made of a conductive material such as aluminum, it could be made utilizing a non-conductive material which has a conductive capability added to its surface and its use would be within the spirit and scope of the present invention. Accordingly, many modifications may be made by one of ordinary skill in the art without departing from the spirit and scope of the appended claims.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A new sputter source is disclosed that allows for high rates of deposition at pressures one or two orders of magnitude lower than has previously been obtained. This results in denser films with reduced ion and electron damage to the substrate.

Description

FIELD OF THE !NVENTiON
[0001 ] The present invention relates generally to a sputter source and more specifically to a magnetron sputter source, the deposition of materials and more specifically to utilizing a sputter source for the deposition of the material.
BACKGROUND OF THE INVENTION
[0002] The deposition of materials using a magnetron enhanced sputter source has been used for more than 30 years. The cross section of a typical circular magnetron sputter source is shown in Figure 1. The sputter source 100 is placed in a vacuum chamber 101. The vacuum chamber 101 is attached to a vacuum pump (not shown) through a port 109. Magnets 106 are arranged in 2 concentric rings and attached to an iron yoke 107 resulting in a strong magnetic field 104 that penetrates the target 108 and is largely parallel 1 10 with the target surface 109. The strong magnetic field 1 10, typically >300 gauss, parallel to the target surface 109 traps the gas ions near the target surface 109 resulting in an increase of several orders of magnitude if ions available for sputtering which results in a corresponding increase in the sputtering rate. A power supply (not shown) DC or RF is electrically attached from the chamber 101 to the target 108. A gas, typically argon, is metered into the vacuum chamber 101 through a MFC 1 1 1 to pressure of typically 3X1 OE-3 to 1 X 10E-2Torr. The power supply is turned on and the voltage is raised to 300-400 volts for a DC power supply and typically 1 -10 KW for an RF supply resulting in sputtering of the target surface 109. The target material 108 is deposited onto the substrate 105 which is held in place by a chuck 03, which is typically temperature controlled. Such an arrangement results in a 10 to 100 fold increase in the deposition rate of material from the target 108 onto the substrate surface 105 when compared to sputtering without magnets 106.
[0003] Various other magnetic arrangements have been used for sputtering, all based on a magnetic field penetrating the surface of a target and a magnetic field parallel to
4415PCT the target surface. An example is shown in Fig. 2 and is known a hollow cathode 200. The hollow cathode 200 is placed in a vacuum chamber 101 which is attached to a vacuum pump (not shown) and has a gas injection port 110 the same as in Fig. 1. The hollow cathode 200 is placed in a vacuum chamber 101 which is attached to a vacuum pump (not shown) and has a gas injection port 1 10 the same as in Fig. 1. The hollow cathode 200 consists of cylindrical housing 202. Two rings of magnets 206 are attached to an iron yoke 207 resulting in a strong magnetic field 204 that penetrates the target 208. A DC or RF power supply (not shown) is attached from the vacuum chamber 101 to the target 208 as was done in Fig. 1. Argon is introduced into the vacuum chamber 101 through port 1 10 and typically metered by a MFC 1 1 1 to a pressure of 3-10 X 1 OE-3 Torr. The power supply is turned on to 300-400 volts for a DC supply and typically 1 -10 KW for an RF supply. Sputtering occurs where the magnetic field 210 is largely parallel to the target surface 209. The deposition rate onto the substrate surface is many times greater than the deposition rate without magnets. The hollow cathode 200 results in directional sputtering and is used for sputtering onto substrates with features with aspect ratios, i.e. >5:1.
[0004] Accordingly what is needed is a system and method that allows for high rates of deposition at low pressures. The present invention addresses such a need.
SUMMARY OF THE INVENTION
[0005] A new sputter source is disclosed that allows for high rates of deposition at pressures one or two orders of magnitude lower than has previously been obtained. This results in denser films with reduced ion and electron damage to the substrate.
BRIEF DESCRIPTION OF DRAWINGS
[0006] FIG. 1 shows an example of a cross section of a typical circular magnetron sputter source.
[0007] FlG, 2 shows an example of prior art which is known as a hollow cathode.
[0008] FlG. 3 shows the present invention, a cross section of the sputter source which consists of a circular housing.
[0009] FIG. 4 is a top view of the present invention and shows the inner ring of magnets and outer ring of magnets arranged in a hexagon.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0010] The present invention relates generally to a sputter source and more specifically to a magnetron sputter source, the deposition of materials and more specifically to utilizing a sputter source for the deposition of the material. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiments and the generic principles and features described herein will be readily apparent to those skilled in the art. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features described herein.
[001 1 ] The present invention is a "Concentric Hollow Cathode Sputter Source" and is shown in Fig. 3. Fig. 3 is a cross section of the sputter source 300 which consists of a circular housing 302. A outer hexagon ring of two rows of magnets 306, 319 are attached to an iron yoke 302 and an inner hexagonal ring of two rows of magnets 306, 319 are attached to an iron yoke 302 and an inner hexagonal ring of two rows of magnets 313, 318 are also attached io iron yoke 302. The iron yoke 302 is the return path for the magnetic flux from all the magnets.
[0012] Fig. 4 is a top view of the present invention and shows the inner ring of magnets 313 and outer ring of magnets 306 arranged in a hexagon. Other configurations are possible such as 3 sides, 4 sides, etc., however 6 sides is the preferred configuration. Al! the magnets are attached to the iron yoke 307,
[0013] Referring to Fig. 3, the magnetic field has three components. The first component is a magnetic field 314 from the upper row of outer magnets 319 to the lower row of outer magnets 306 that penetrates the outer row of targets 312 and is largely parallel to the outer target surface 309 which traps ions near the surface 309 and results in a high rate of sputtering from the outer target surfaces 312. A second magnetic field 316 is generated from [he inner row of upper magnets 318 to the inner row of low magnets 313 which penetrates the inner targets 308 and is largely parallel to the inner target surface 322 and traps ions at the inner target surface 322 and results in a high rate of sputtering from the inner target surfaces 322. The third magnetic field 304 is generated from the outer ring of upper magnets 319 to the inner ring of magnets 318. A similar magnetic field 321 is generated at the bottom of the cavity 315 between the outer ring of lower magnets 306 and the inner ring of lower magnets 313. Magnetic fields 304 and 321 trap ions and electrons within the cavity 315 which results in increasing the ion density within the cavity 315 and allows sputtering at pressures of 2 X 10E-5 to 1 X 10E-2 Torr and preferably at 5 X 10E-5 to 5 X E-4 Torr. Other magnetron sputter sources such as the planar source 100 and the hollow cathode 200 require pressures from 3 X 10E-3 to 1 X 10E-2 Torr. The low pressure of this concentric hollow source 300 results in denser sputtered films with less argon or any other gases used in the sputtering process trapped in the deposited film. The lower pressure also increases the mean free path in [he vacuum reducing the collusions between the qas molecules and the sputtered materia! resulting in an increase in the average energy of the arriving sputtered material at the substrate surface, which also increases the deposited material density. A second advantage of trapping the ions and electrons within the cavity 315 is that the number of ions and electrons reaching the substrate surface 105 is greatly reduced as compared to the planar source 100 or the hollow cathode 200. The reduced ions and electrons reaching the substrate surface 105 greatly reduces ion and electron damage to semiconductor devices fabricated on the substrate surface 105.
[0014] Although the present invention has been described in accordance with the embodiments shown, one of ordinary skill in the art will readily recognize that there could be variations to the embodiments and those variations would be within the spirit and scope of the present invention. For example, although the splice is preferably made of a conductive material such as aluminum, it could be made utilizing a non-conductive material which has a conductive capability added to its surface and its use would be within the spirit and scope of the present invention. Accordingly, many modifications may be made by one of ordinary skill in the art without departing from the spirit and scope of the appended claims.

Claims

CLAIMS What is claimed is:
1. A concentric sputter source within a vacuum chamber, the concentric sputter source comprising of two rows of magnets in an outer ring and two rows of magnets in an inner ring.
2. The concentric sputter source of claim 1 , wherein the two rows of magnets on the outer ring and the two rows of magnets on the inner ring are arranged so that the magnetic poles on the upper ring attracting the inner upper ring of magnets and are also attracting the outer ring of magnets and the inner lower ring of magnets is attracting the outer lower ring of magnets.
3. The concentric sputter source of claim 1 , wherein the outer ring magnets are attached to a first iron yoke which is a return path on the magnetic fields; and the inner ring magnets are attached to a second iron yoke which is a return path on the magnetic fields.
4. The concentric sputter source of claim 1 , wherein the inner and outer magnet rings consists of 3 sides or more sides.
5. The concentric sputter source of claim 1 , wherein the inner and outer magnet rings preferably consist of 6 sides.
6. The concentric sputter source of claim 1 , wherein the magnetic field at a target surfaces is 200-1000 gauss.
7. The concentric sputter source of claim 1 , wherein the magnetic field at the target surfaces is preferably 300-400 gauss.
8. The concentric sputter source of claim 1 , wherein the magnetic field from the outer magnet ring to the inner magnet ring is 300-1000 gauss.
9. The concentric sputter source of claim 1 , wherein the magnetic field from the outer magnetic ring to the inner magnetic ring is preferably 300-400 gauss.
10. The concentric sputter source of claim 1 , wherein the vacuum chamber operates at pressures as low as 2 X 10E-5 Torr.
PCT/US2009/031550 2008-01-18 2009-01-21 Concentric hollow cathode magnetron sputter source WO2009092097A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2009801545760A CN102282286A (en) 2009-01-16 2009-01-21 Concentric hollow cathode magnetron sputter source
EP09702653A EP2387625A1 (en) 2009-01-16 2009-01-21 Concentric hollow cathode magnetron sputter source
JP2011545340A JP2012515259A (en) 2009-01-16 2009-01-21 Concentric hollow cathode magnetron sputtering source

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US2204308P 2008-01-18 2008-01-18
US61/022,043 2008-01-18
US12/355,603 2009-01-16
US12/355,603 US20090188790A1 (en) 2008-01-18 2009-01-16 Concentric hollow cathode magnetron sputter source

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013045596A2 (en) 2011-09-29 2013-04-04 The Morgan Crucible Company Plc Inorganic materials, methods and apparatus for making same, and uses thereof
WO2014063970A2 (en) 2012-10-25 2014-05-01 Morgan Advanced Materials Plc. Laminated materials, methods and apparatus for making same, and uses thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997697A (en) * 1995-10-06 1999-12-07 Balzers Aktiengesellschaft Magnetron sputtering source and method of use thereof
US6787006B2 (en) * 2000-01-21 2004-09-07 Applied Materials, Inc. Operating a magnetron sputter reactor in two modes
US20080011600A1 (en) * 2006-07-14 2008-01-17 Makoto Nagashima Dual hexagonal shaped plasma source

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6497803B2 (en) * 2000-05-31 2002-12-24 Isoflux, Inc. Unbalanced plasma generating apparatus having cylindrical symmetry
US6689253B1 (en) * 2001-06-15 2004-02-10 Seagate Technology Llc Facing target assembly and sputter deposition apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997697A (en) * 1995-10-06 1999-12-07 Balzers Aktiengesellschaft Magnetron sputtering source and method of use thereof
US6787006B2 (en) * 2000-01-21 2004-09-07 Applied Materials, Inc. Operating a magnetron sputter reactor in two modes
US20080011600A1 (en) * 2006-07-14 2008-01-17 Makoto Nagashima Dual hexagonal shaped plasma source

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013045596A2 (en) 2011-09-29 2013-04-04 The Morgan Crucible Company Plc Inorganic materials, methods and apparatus for making same, and uses thereof
EP3012345A1 (en) 2011-09-29 2016-04-27 Nitride Solutions Inc. Inorganic materials, methods and apparatus for making same, and uses thereof
WO2014063970A2 (en) 2012-10-25 2014-05-01 Morgan Advanced Materials Plc. Laminated materials, methods and apparatus for making same, and uses thereof

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