WO2009058408A1 - Methods of preparing clusterboron - Google Patents

Methods of preparing clusterboron Download PDF

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Publication number
WO2009058408A1
WO2009058408A1 PCT/US2008/012473 US2008012473W WO2009058408A1 WO 2009058408 A1 WO2009058408 A1 WO 2009058408A1 US 2008012473 W US2008012473 W US 2008012473W WO 2009058408 A1 WO2009058408 A1 WO 2009058408A1
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WIPO (PCT)
Prior art keywords
solvent
reaction
acid
mixture
product
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PCT/US2008/012473
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French (fr)
Inventor
Kevin S. Cook
Mark Oxford
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Semequip, Inc.
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Priority to EP08844999.6A priority Critical patent/EP2205524B1/en
Priority to KR1020157025455A priority patent/KR20150108947A/en
Priority to CN200880114573.XA priority patent/CN101848855B/en
Priority to JP2010532074A priority patent/JP5710976B2/en
Publication of WO2009058408A1 publication Critical patent/WO2009058408A1/en
Priority to US13/008,724 priority patent/US8753600B2/en

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C01B6/06Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or polonium; Monoborane; Diborane; Addition complexes thereof
    • C01B6/10Monoborane; Diborane; Addition complexes thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/02Boron; Borides
    • C01B35/026Higher boron hydrides, i.e. containing at least three boron atoms
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/02Boron; Borides
    • C01B35/023Boron

Definitions

  • the invention provides methods for synthesizing Bi 8 H 22 as a mixture of syn and anti isomers, commonly marketed as ClusterBoron.
  • the invention further provides isotopically enriched Bi 8 H 22 prepared by the aforementioned methods.
  • the invention relates the preparation of natural abundance Bi 8 H 22 , 10 B-enriched Bi 8 H 22 and "B-enriched Bi 8 H 22 .
  • boron hydride compounds have become important feed stocks for boron doped P-type impurity regions in semiconductor manufacture. More particularly, high molecular weight boron hydride compounds, e.g., boron hydride compounds comprising at least a five (5) boron atom cluster, are preferred boron atom feed stocks for molecular boron implantation.
  • Scaling is driven by continuous advances in lithographic process methods, allowing the definition of smaller and smaller features in the semiconductor substrate which contains the integrated circuits.
  • a generally accepted scaling theory has been developed to guide chip manufacturers in the appropriate resize of all aspects of the semiconductor device design at the same time, i.e., at each technology or scaling node.
  • the greatest impact of scaling on ion implantation processes is the scaling of junction depths, which requires increasingly shallow junctions as the device dimensions are decreased. This requirement for increasingly shallow junctions as integrated circuit technology scales translates into the following requirement: ion implantation energies must be reduced with each scaling step.
  • the extremely shallow junctions called for by modern, sub-0.13 micron devices are termed "Ultra-Shallow Junctions" or USJs.
  • boron doped P-type junctions have been hampered by difficulty in controlling the ion-implantation process using boron.
  • Boron clusters or cages e.g., boranes have been investigated as a feed stock for delivering molecular boron species to a semiconductor substrate with reduced penetration. See PCT/US03/20197.
  • boron hydride compounds that is boron compounds having between 5 and about 100 boron atoms are preferred for use in molecular ion implantation methods for delivering boron atoms to a semiconductor substrate.
  • two or more structurally related boron hydride compounds having the same number of boron atoms but different numbers of hydrogen atoms have been isolated for various sized boron clusters.
  • pentaborane(9) and pentaborane(l 1) have chemical formulas Of B 5 H 9 and B 5 H] i respectively.
  • Such compounds are frequently calssified as closo (B n H n ), nido(B n H n+2 ), arachno (B n H n+4 ), hypho (B n H n+6 ), conjuncto (B n H n+8 ), and the like.
  • different boron hydride species including isomers and compounds containing various amounts of hydrogen, are frequently known for boron hydrides having n boron atoms. Jemmis, et al.
  • the invention is particularly useful for facile synthesis and purification of large quantities Of B 18 H 22 .
  • the present invention also relates to isotopically-enriched Bi 8 H 22 .
  • enriched means the modification of the boron isotopes natural abundance.
  • natural abundance of the 10 B isotope ranges from 19.10 % to 20.31 % and natural abundance of the 11 B isotope ranges from 80.90 % to 79.69 %.
  • a typical Bi 8 H 22 molecular ion beam contains a wide range of ion masses due to a varying number of hydrogen losses from the molecular ion as well as the varying mass due to the two naturally occurring isotopes.
  • mass selection is possible in an implanter device used in semiconductor manufacture, use of isotopically enriched boron in Bi 8 H 22 can greatly reduce the spread of masses, thereby providing an increased beam current of the desired implantation species.
  • 11 B and 10 B isotopically-enriched Bj 8 H 22 is also of great interest.
  • the invention provides methods of synthesizing octadecaborane (B 18 H 22 ), the method comprising (a) contacting the salt of borane anion B 20 HiS 2" with an acid to produce H 2 B 20 Hi 8 »xH 2 O; and then preferably (b)removing water from the reaction vessel in the presence of a Bi 8 H 22 solubilizing solvent that remains essentially chemically inert in the system.
  • the invention provides synthesizing Bi 8 H 22 by methods comprising the steps of: (a) contacting the borane anion B 20 Hi 8 2" in solvent with an acidic ion-exchange resin to produce a solution of H 2 B 20 Hi g*xH 2 O;
  • Preferred methods of the invention are suitable to prepare isotopically pure Bi 8 H 22 and mixtures of structural isomers of Bi 8 H 22 . That is, the method of the invention, provide Bj 8 H 22 capable of generating a suitable molecular ion beam for ion implantation and high purity Bj 8 H 22 for use in other applications.
  • a solution OfB 20 Hi 8 2" salt of the B 2 oHi 8 2" anion is contacted with an acid ion-exchange resin and the resulting solution is of H 2 B 20 Hi 8 *xH 2 O is concentrated by removal of the majority of solvent.
  • any acidic ion-exchange resin capable of exchanging cations of a borane anion with protons are suitable for use in the methods of synthesizing Bi 8 H 22 provided by the invention.
  • Preferred acidic ion-exchange resins include cross-linked, solvent-insoluble resins having a plurality of acidic functional groups capable of exchanging a proton for the cation of the borane salt.
  • Certain preferred acidic ion-exchange resins include aromatic or partially aromatic polymers comprising a plurality of sulfonic acid residues and more preferably include such aromatic or partially aromatic polymers which are cross-linked. .
  • B J 8 H 22 is produced by contacting the concentrate with a chemically inert solvent with simultaneous water removal from the system.
  • a chemically inert solvent with simultaneous water removal from the system.
  • conditions conducive to removal of water and other solvents of crystallization from the hydrated hydronium ion salt, H 2 B 20 Hi 8 ⁇ xH 2 O (where x is a positive real number) are also suitable to induce partial hydronium ion degradation.
  • preferred degradation conditions include the use of Dean Stark trap, moisture traps, moisture scavengers or contacting the hydrated hydronium salt with one or more drying agents.
  • Drying agents may include, but are not limited to molecular sieves, phosphorus pentoxide, alumina, silica, silicates and the like, or a combination thereof.
  • Reaction solvents should not cause degradation to Bi 8 H 22 or any starting materials or intermediates produced during the course of the reaction. These may include, but are not limited to aromatic and arene solvents, alkane solvents, ethers, sulfones, esters, and the like.
  • Reaction temperatures to promote water removal from the system range from 0 0 C to about 250 °C.
  • the invention provides synthesizing Bj 8 H 22 by methods comprising the steps of:
  • Preferred methods of the invention are suitable to provide B] 8 H 22 capable of generating a suitable molecular ion beam for ion implantation and high purity Bi 8 H 22 for us in other applications.
  • the methods of synthesis which provide Bi 8 H 22 in high isolated yield (>50%) and with few synthetic procedures, are suitable for use in preparing isotopically enriched Bi 8 H 22 , e.g., the isotopic concentration of 10 B or 1 IB is greater than natural abundance.
  • Preparation of isotopically enriched, 10 B or 11 B, Bj 8 H 22 is practical using the invention synthesis methods due to the limited number of synthetic steps, mass efficiency, and high overall synthetic yield (>65 % from B 20 Hi 8 2" ).
  • Figure 2 shows use of a reaction set-up according to a preferred process of the invention.
  • Figure 1 shows a specifically preferred process of the invention.
  • water may be removed from the reaction mixture by a variety of methods including e.g. through the use of moisture traps, moisture scavengers, or more drying agents such as molecular sieves, phosphorus pentoxide, alumina, silica, silicates and the like, or a combination thereof.
  • a Dean-Stark trap can be preferred such as illustrated in Figure 2.
  • the isotopic concentration of 10 B atoms suitably may be greater than the natural abundance, e.g.
  • the isotopic concentration of B atoms suitably may be greater than the natural abundance, e.g. wherein at least about 90% of the boron atoms present in the product Bj 8 H 22 are 11 B, or wherein at least about 95% of the boron atoms present in the product B) 8 H 22 are ' 1 B, or wherein at least about 99% of the boron atoms present in the product Bi 8 H 22 are 1 1 B.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

The invention provides new methods for synthesis of ClusterBoron (B18H22). Preferred methods of the invention include generation of the conjugate acid of B20HI 82- and degradation of the acid in solution to produce B18H22 in high yields and high purity. The invention further provides isotopically enriched boranes, particularly isotopically enriched 10B18H22 and 11B18H22.

Description

METHODS OF PREPARING CLUSTERBORON
BACKGROUND
The present application claims the benefit of U.S. provisional application number 61/001633 filed November 2, 2007, which is incorporated by reference herein in its entirety.
1. Field of the Invention.
The invention provides methods for synthesizing Bi8H22 as a mixture of syn and anti isomers, commonly marketed as ClusterBoron. The invention further provides isotopically enriched Bi8H22 prepared by the aforementioned methods. In particular, the invention relates the preparation of natural abundance Bi8H22, 10B-enriched Bi8H22 and "B-enriched Bi8H22.
2. Background. Large boron hydride compounds have become important feed stocks for boron doped P-type impurity regions in semiconductor manufacture. More particularly, high molecular weight boron hydride compounds, e.g., boron hydride compounds comprising at least a five (5) boron atom cluster, are preferred boron atom feed stocks for molecular boron implantation.
An important aspect of modern semiconductor technology is the continuous development of smaller and faster devices. This process is called scaling. Scaling is driven by continuous advances in lithographic process methods, allowing the definition of smaller and smaller features in the semiconductor substrate which contains the integrated circuits. A generally accepted scaling theory has been developed to guide chip manufacturers in the appropriate resize of all aspects of the semiconductor device design at the same time, i.e., at each technology or scaling node. The greatest impact of scaling on ion implantation processes is the scaling of junction depths, which requires increasingly shallow junctions as the device dimensions are decreased. This requirement for increasingly shallow junctions as integrated circuit technology scales translates into the following requirement: ion implantation energies must be reduced with each scaling step. The extremely shallow junctions called for by modern, sub-0.13 micron devices are termed "Ultra-Shallow Junctions" or USJs.
Methods of manufacturing boron doped P-type junctions have been hampered by difficulty in controlling the ion-implantation process using boron. The single boron atom, being light (MW =10.8), can penetrate too deeply into a silicon substrate and diffuse throughout the substrate lattice rapidly during annealing or other elevated temperature processes.
Boron clusters or cages, e.g., boranes have been investigated as a feed stock for delivering molecular boron species to a semiconductor substrate with reduced penetration. See PCT/US03/20197.
Large boron hydride compounds, that is boron compounds having between 5 and about 100 boron atoms are preferred for use in molecular ion implantation methods for delivering boron atoms to a semiconductor substrate. Typically, there may be isomers of the boron hydride compound that exist. That is, boron hydrides with the same number of boron and hydrogen atoms that possess different chemical properties, e.g. structural isomers or stereoisomers. In addition, two or more structurally related boron hydride compounds having the same number of boron atoms but different numbers of hydrogen atoms have been isolated for various sized boron clusters. For example, pentaborane(9) and pentaborane(l 1) have chemical formulas Of B5H9 and B5H] i respectively. Such compounds are frequently calssified as closo (BnHn), nido(BnHn+2), arachno (BnHn+4), hypho (BnHn+6), conjuncto (BnHn+8), and the like. Thus, different boron hydride species, including isomers and compounds containing various amounts of hydrogen, are frequently known for boron hydrides having n boron atoms. Jemmis, et al. have provided a review of various macropolyhedral boranes and known compounds having n boron atoms and various amounts of hydrogen.1' 2 Mixtures of isomers and mixtures of n-boron atom containing boron hydrides are suitable for use in the implantation methods discussed. The molecular ions generated by the ionization process of boron hydride mixtures will have uniform and narrow weight distributions.
Current synthetic technologies for the preparation of large boron hydride molecules, e.g., boron hydride molecules with more than 12 boron atoms, are often plagued by complicated synthetic processes, low isolated yields, and/or inconsistent reproducibility.
Although there are several synthetic routes reported in the literature for the preparation Of Bi8H22 as a mixture of isomers, they are lengthy, often result in notably low yields, are unreliable and have safety issues associated with the synthesis.
It thus would be desirable to have new methods for preparation of B 18H22.
DESCRIPTION OF THE INVENTION
We have now discovered new methods for the preparation of octadecaborane, B18H22. The invention is particularly useful for facile synthesis and purification of large quantities Of B18H22. The present invention also relates to isotopically-enriched Bi8H22. Whereas, by definition, enriched means the modification of the boron isotopes natural abundance. Depending on source natural abundance of the 10B isotope ranges from 19.10 % to 20.31 % and natural abundance of the 11B isotope ranges from 80.90 % to 79.69 %.
A typical Bi8H22 molecular ion beam contains a wide range of ion masses due to a varying number of hydrogen losses from the molecular ion as well as the varying mass due to the two naturally occurring isotopes. As mass selection is possible in an implanter device used in semiconductor manufacture, use of isotopically enriched boron in Bi8H22 can greatly reduce the spread of masses, thereby providing an increased beam current of the desired implantation species. Thus, 11B and 10B isotopically-enriched Bj8H22 is also of great interest. In one aspect, the invention provides methods of synthesizing octadecaborane (B18H22), the method comprising (a) contacting the salt of borane anion B20HiS2" with an acid to produce H2B20Hi 8»xH2O; and then preferably (b)removing water from the reaction vessel in the presence of a Bi8H22 solubilizing solvent that remains essentially chemically inert in the system.
In certain aspects the invention provides synthesizing Bi8H22 by methods comprising the steps of: (a) contacting the borane anion B20Hi8 2" in solvent with an acidic ion-exchange resin to produce a solution of H2B20Hi g*xH2O;
(b) concentrating the mixture comprising H2B20Hi8^xH2O;
(c) removing water from the reaction vessel in the presence of a Bi8H22 solubilizing solvent that remains essentially chemically inert in the system; (d) separating insoluble byproducts from the reaction mixture through (i) filtration and/or (ii) concentration of reaction solvent, dissolution OfB]8H22 into aliphatic solvent and filtration of byproducts; (e) isolation of B 18H22 through removal of solvent.
Such a preferred process is represented schematically in the flow chart (Figure
2). Preferred methods of the invention are suitable to prepare isotopically pure Bi8H22 and mixtures of structural isomers of Bi8H22. That is, the method of the invention, provide Bj8H22 capable of generating a suitable molecular ion beam for ion implantation and high purity Bj8H22 for use in other applications.
In some aspects of the invention, a solution OfB20Hi8 2" salt of the B2oHi8 2" anion is contacted with an acid ion-exchange resin and the resulting solution is of H2B20Hi 8*xH2O is concentrated by removal of the majority of solvent. Preferred solvents or solvent mixtures in which both the B20Hi8 2' salt and H2B20Hi 8*xH2o are soluble but not destroyed. These solvents and solvent mixtures may include water, alcohols, nitriles, ethers, cyclic ethers, sulfones, and the like.
- 4 -
BOS2 703090.1 In some aspects of the invention, any acidic ion-exchange resin capable of exchanging cations of a borane anion with protons are suitable for use in the methods of synthesizing Bi8H22 provided by the invention. Preferred acidic ion-exchange resins include cross-linked, solvent-insoluble resins having a plurality of acidic functional groups capable of exchanging a proton for the cation of the borane salt. Certain preferred acidic ion-exchange resins include aromatic or partially aromatic polymers comprising a plurality of sulfonic acid residues and more preferably include such aromatic or partially aromatic polymers which are cross-linked. .
BJ 8H22 is produced by contacting the concentrate with a chemically inert solvent with simultaneous water removal from the system. Although not wishing to be bound by theory, conditions conducive to removal of water and other solvents of crystallization from the hydrated hydronium ion salt, H2B20Hi8^xH2O (where x is a positive real number), are also suitable to induce partial hydronium ion degradation. Typically, preferred degradation conditions include the use of Dean Stark trap, moisture traps, moisture scavengers or contacting the hydrated hydronium salt with one or more drying agents. Drying agents may include, but are not limited to molecular sieves, phosphorus pentoxide, alumina, silica, silicates and the like, or a combination thereof. Reaction solvents should not cause degradation to Bi8H22 or any starting materials or intermediates produced during the course of the reaction. These may include, but are not limited to aromatic and arene solvents, alkane solvents, ethers, sulfones, esters, and the like. Reaction temperatures to promote water removal from the system range from 0 0C to about 250 °C.
In a preferred aspect, the invention provides synthesizing Bj8H22 by methods comprising the steps of:
(a) contacting the borane anion B20Hi8 2" in an acetonitrile:water solvent mixture with an Amberlite acid ion-exchange resin to produce a solution of H2B20H]8*xH2θ;
(b) concentrating the mixture comprising H2B20H i8*xH2O; (c) removing water from the reaction vessel in the presence of a hot toluene (90 °C to 120 °C) through the use of a Dean Stark moisture trap (see for instance Figure 2); (d) separating insoluble byproducts from the reaction mixture through filtration;
(e) removal or concentration of toluene to leave crude B18H22 that is contaminated with boric acid and borates;
(f) dissolution of crude Bi8H22 into hexanes and filtration of insolubles; (g) removal of hexanes to isolate Bi8H22
Preferred methods of the invention are suitable to provide B]8H22 capable of generating a suitable molecular ion beam for ion implantation and high purity Bi8H22 for us in other applications.
The methods of synthesis, which provide Bi8H22 in high isolated yield (>50%) and with few synthetic procedures, are suitable for use in preparing isotopically enriched Bi8H22, e.g., the isotopic concentration of 10B or 1 IB is greater than natural abundance. Preparation of isotopically enriched, 10B or 11B, Bj8H22 is practical using the invention synthesis methods due to the limited number of synthetic steps, mass efficiency, and high overall synthetic yield (>65 % from B20Hi8 2").
Other aspects of the invention are disclosed infra.
BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows schematically a preferred process of the invention;
Figure 2 shows use of a reaction set-up according to a preferred process of the invention.
DETAILED DESCRIPTION
Figure 1 shows a specifically preferred process of the invention.
As discussed above, in the above methods, water may be removed from the reaction mixture by a variety of methods including e.g. through the use of moisture traps, moisture scavengers, or more drying agents such as molecular sieves, phosphorus pentoxide, alumina, silica, silicates and the like, or a combination thereof. A Dean-Stark trap can be preferred such as illustrated in Figure 2. In methods of the invention wherein the isotopic concentration of 10B atoms suitably may be greater than the natural abundance, e.g. wherein at least about 50% of the boron atoms present in the product Bj8H22 are 10B, or wherein at least about 80% of the boron atoms present in the product Bi8H22 are 10B, or wherein at least about 90% of the boron atoms present in the product Bi8H22 are 10B, or wherein at least about 95% of the boron atoms present in the product Bi8H22 are 10B, or wherein at least about 99% of the boron atoms present in the product Bi8H22 are 10B.
In the methods of the invention, the isotopic concentration of B atoms suitably may be greater than the natural abundance, e.g. wherein at least about 90% of the boron atoms present in the product Bj8H22 are 11B, or wherein at least about 95% of the boron atoms present in the product B)8H22 are ' 1B, or wherein at least about 99% of the boron atoms present in the product Bi8H22 are 1 1B.
The invention now being generally described, it will be more readily understood by reference to the following example, which is included merely for purposes of illustration of certain aspects and embodiments of the present invention, and are not intended to limit the invention.
Example 1
Re-crystallized but not dried (HNEt3)2B20Hi8»xH2O prepared from (HNEt3)2B I 0HI 0 (333.0 g, 1.03 mol) is dissolved into 3 L of acetonitrile and 500 mL of water. The solution is then contacted with a 10 kg column of Amberlite IR- 120 acid ion exchange resin. The H2B20Hi8^xH2O solution is eluted with a further 3 L of acetonitrile and eluent and washings combined. The mixture is concentrated to give a viscous yellow oil and the mixture transferred to the flask shown in Figure 3. 1.5 L of toluene is added and the Dean Stark trap filled with additional toluene. After purging with argon for 45 minutes, the solution is brought to reflux with rapid stirring. Following the removal of most of the water from the reaction, hydrogen evolution significantly increases and precipitate begins to form. When hydrogen evolution ceases, the reaction is cooled and insolubles filtered away. The toluene solution is concentrated to dryness to give a light yellow powder that is extracted with 4 L of hexanes. Any insolubles are removed by filtration. The hexane solution is removed to leave white to off-white B18H22 (77.4 g, 69.1 %).
Example 2
Re-crystallized but not dried (HNEt3)2' 1B20Hi8^xH2O prepared from (HNEt3)2"BioHlo (5.00 g, 15.4 mmol) is dissolved into 200 mL of acetonitrile and 25 mL of water. The solution is then contacted with a 500 g column of Amberlite IR- 120 acid ion exchange resin. The H2" B20Hi 8*xH2O solution is eluted with a further 300 mL of acetonitrile and eluent and washings combined. The mixture is concentrated to give a viscous yellow oil and the mixture transferred to the flask shown in Figure 3. 150 mL of toluene is added and the Dean Stark trap filled with additional toluene. After purging with argon for 45 minutes, the solution is brought to reflux with rapid stirring. Following the removal of most of the water from the reaction, hydrogen evolution significantly increases and precipitate begins to form. When hydrogen evolution ceases, the reaction is cooled and insolubles filtered away. The toluene solution is concentrated to dryness to give a light yellow powder that is extracted with 200 mL of hexanes. Any insolubles are removed by filtration. The hexane solution is removed to leave white to off-white 1 1Bi8H22 (1.17 g, 69.0 %). 1 1B enrichment was determined to be that of the starting material (> 98.6 % 11B isotopic enrichment).
The invention has been described in detail with reference to preferred embodiments thereof. However, it will be appreciated that those skilled in the art, upon consideration of the disclosure, may make modifications and improvements within the spirit and scope of the invention.
References: 1. Jemmis, E. D.; Balakrishnarajan, M. M.; Pancharatna, P. D., Electronic Requirements for Macropolyhedral Boranes. Chem. Rev. 2002, 102, 93-144. 2. Jemmis, E. D.; Balakrishnarajan, M. M.; Pancharatna, P. D., A unifying Electron-Counting Rule for Macropolyhedral Boranes, metallaboranes, and Metallocenes. J. Amer. Chem. Soc. 2001, 123, 4313-4323. 3. Pitochelli, A. R.; Hawthorne, M. F., The Preparation of a New Boron Hydride Bi8H22. J. Amer. Chem. Soc. 1962, 84, 3218.
4. Hawthorne, M. F.; Pilling, R. L.; Stokely, P. F., The preparation and rearrangement of the three isomeric B20Hi8 4' ions. J Am. Chem. Soc. 1965, 87, 1893- 1899.
5. Olsen, F. P.; Vasavada, R. C; Hawthorne, M. F., The chemistry of n-B]8H22 and i-B,8H22. J. Am. Chem. Soc. 1968, 90, (15), 3946-3951.
6. Chamberland, E. L.; Muetterties, E. L., Chemistry of Boranes. XVIII. Oxidation Of Bi0Hi0 "2 and its derivatives. Inorg. Chem. 1964, 3, 1450-1456.
All of the patents and publications cited herein are hereby incorporated by reference.
Those skilled in the art will recognize, or be able to ascertain using no more than routine experimentation, many equivalents to the specific embodiments of the invention described herein. Such equivalents are intended to be encompassed by the following claims.

Claims

What is claimed is:
1. A method of synthesizing octadecaborane (B18H22), the method comprising:
(a) contacting the salt of borane anion B20Hi8 2' with an acid to produce H2B20Hi8-XH2O; and
(b) removing water from the reaction vessel in the presence of a Bi8H22 solubilizing solvent that remains essentially chemically inert in the system.
2. A method of synthesizing octadecaborane (B]8H22), the method comprising:
(a) contacting the salt of borane anion B20Hi8 2" in solvent with an acid to produce a solution of H2B20H i8*xH2O;
(b) optionally concentrating the mixture comprising H2B20H i8*xH2O;
(c) removing water from the reaction vessel in the presence of a Bi8H22 solubilizing solvent that remains essentially chemically inert in the system; and
(d) optionally separating insoluble byproducts from the reaction mixture through (i) filtration and/or (ii) concentration of reaction solvent, dissolution Of Bi8H22 into solvent and filtration of byproducts.
3. The method of claim 2 further comprising isolating Bi8H22 through removal of solvent.
4. The method of claim 2 wherein the B20Hi8 2' salt is an alkyl ammonium salt with a cation formula of [NR1R2R3R4]*, wherein
R1, R2, and R3 are independently selected from the group consisting of hydrogen, Ci-20alkyl, C6-i0aryl, C7-iOaralkyl, or any two of R1, R2, or R3 taken in combination form a heterocyclic ring; and
R4 is selected from hydrogen, Ci-20alkyl, or C6-i0aryl;
5. The method of claim 1 or 2 wherein the acid is an organic acid having a pKa of less than about 2.
6. The method of claim 1 or 2 wherein the acid is an inorganic acid having a pKa of less than about 2.
7. The method of claim 1 or 2 wherein the acid is an acidic ion-exchange resin.
8. The method of claim 7 wherein the acidic ion exchange resin is an aromatic or partially aromatic polymer comprising a plurality of sulfonic acid residues.
9. The method of claim 7 wherein the acidic ion exchange resin is a crosslinked sulfonated polystyrene.
10. The method of claim 1 or 2 wherein the solubilizing solvent is a mixture of aqueous and non-aqueous solvents.
11. The method of claim 10 wherein the non-aqueous solvent is selected from the group consisting of alcohols, nitriles, ethers, and combinations thereof.
12. The method of claim 10 wherein the non-aqueous solvent is methanol, ethanol, acetonitrile, tetrahydrofuran, dioxane, or a combination thereof.
13. The method of claim 10 wherein the non-aqueous solvent comprises between about 1% and about 99% acetonitrile by volume.
14. The method of claim 10 wherein the non-aqueous solvent comprises between about 80% and about 95% acetonitrile by volume.
15. The method of claim 10 wherein the non-aqueous solvent is acetonitrile.
16. The method of claim 10 wherein the solvent comprises between about 1% and 99% water by volume.
17. The method of claim 10 wherein the solvent is a about a 6: 1 acetonitrile:water mixture by volume.
18. The method of claim 1 or 2 wherein water is removed through the use of moisture traps, moisture scavengers, or more drying agents such as molecular sieves, phosphorus pentoxide, alumina, silica, silicates and the like, or a combination thereof,
19. The method of claim 1 or 2 wherein water is removed through the use of a Dean-Stark trap.
20. The method of claim 1 or 2 wherein the reaction solvent is selected from the group consisting of arenes, alkanes, ethers, or a combination thereof.
21. The method of claim 20 wherein the reaction solvent comprises, consists essentially of or consists of toluene or xylene.
22. The method of claim 1 or 2 wherein the reaction temperature is between about 0 0C and about 200 0C.
23. The method of claim 1 or 2 wherein the reaction temperature is between about 50 0C and about 150 0C.
24. The method of claim 2 wherein the reaction solvent comprises, consists essentially of or consists hexanes.
25. The method of claim 23 wherein the dissolution solvent is from the group consisting of alkanes, ethers, or a combination thereof.
26. The method of claim 23 wherein the dissolution solvent comprises, consists essentially of or consists hexanes.
27. A method of synthesizing octadecaborane (Bi8H22), the method comprising the steps of:
(a) contacting the salt of borane anion B20Hi8 in solvent with acidic ion- exchange resin to produce a solution of H2B2oHi8»xH20; (b) concentrating the mixture comprising H2B2oHj8*xH20;
(c) removing water from the reaction vessel in the presence of a Bj8H22 solubilizing solvent that remains essentially chemically inert in the system;
(d) separating insoluble byproducts from the reaction mixture through (i) filtration and/or (ii) concentration of reaction solvent, dissolution Of Bj8H22 into aliphatic solvent and filtration of byproducts;
(e) isolation of B 18H22 through removal of solvent.
28. A method of synthesizing octadecaborane (Bi8H22), the method comprising the steps of:
(a) contacting the borane anion B20H)8 " in a 6: 1 by volume acetonitrile: water solvent mixture with an Amberlite acid ion-exchange resin to produce a solution of H2B20Hi8-XH2O;
(b) concentrating the mixture comprising H2B20Hi 8*xH2O;
(c) removing water from the reaction vessel in the presence of a hot toluene (90 0C to 120 0C) through the use of a Dean Stark moisture trap (see Figure 3);
(d) separating insoluble byproducts from the reaction mixture through filtration;
(e) removal or concentration of toluene to leave crude Bi8H22 that is contaiminated with boric acid and borates;
(f) dissolution of crude Bi8H22 into hexanes and filtration of insolubles;
(g) removal of hexanes to isolate Bi8H22
29. The method of claim 1 through 28 wherein the isotopic concentration of 10B atoms is greater than the natural abundance.
30. The method of claim 29 wherein at least about 50% of the boron atoms present in the product Bj8H22 are 10B.
31. The method of claim 29 wherein at least about 80% of the boron atoms present in the product B)8H22 are 10B.
32. The method of claim 29 wherein at least about 90% of the boron atoms present in the product B18H22 are 10B.
33. The method of claim 29 wherein at least about 95% of the boron atoms present in the product Bj8H22 are 10B.
34. The method of claim 29 wherein at least about 99% of the boron atoms present in the product B18H22 are 10B.
35. The method of claim 1 through 28 wherein the isotopic concentration of 11B atoms is greater than the natural abundance.
36. The method of claim 35 wherein at least about 90% of the boron atoms present in the product Bj8H22 are 11B.
37. The method of claim 35 wherein at least about 95% of the boron atoms present in the product Bj8H22 are 11B.
38. The method of claim 35 wherein at least about 99% of the boron atoms present in the product Bj8H22 are 11B.
PCT/US2008/012473 2007-11-02 2008-11-03 Methods of preparing clusterboron WO2009058408A1 (en)

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