WO2009057601A1 - Iii族窒化物電子デバイス及びiii族窒化物半導体エピタキシャル基板 - Google Patents

Iii族窒化物電子デバイス及びiii族窒化物半導体エピタキシャル基板 Download PDF

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Publication number
WO2009057601A1
WO2009057601A1 PCT/JP2008/069564 JP2008069564W WO2009057601A1 WO 2009057601 A1 WO2009057601 A1 WO 2009057601A1 JP 2008069564 W JP2008069564 W JP 2008069564W WO 2009057601 A1 WO2009057601 A1 WO 2009057601A1
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Prior art keywords
layer
iii nitride
electronic device
epitaxial substrate
semiconductor epitaxial
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PCT/JP2008/069564
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English (en)
French (fr)
Inventor
Shin Hashimoto
Tatsuya Tanabe
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Sumitomo Electric Industries, Ltd.
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Publication date
Application filed by Sumitomo Electric Industries, Ltd. filed Critical Sumitomo Electric Industries, Ltd.
Priority to EP08845789A priority Critical patent/EP2211376A4/en
Priority to US12/740,770 priority patent/US8541816B2/en
Priority to CN2008801142642A priority patent/CN101842884B/zh
Publication of WO2009057601A1 publication Critical patent/WO2009057601A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02367—Substrates
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

III窒化物系ヘテロ接合トランジスタ１１ａでは、第２のＡｌＹ１ＩｎＹ２Ｇａ１－Ｙ１－Ｙ２Ｎ層１５は、第１のＡｌＸ１ＩｎＸ２Ｇａ１－Ｘ１－Ｘ２Ｎ層１３ａとヘテロ接合２１を成す。第１の電極１７は、第１のＡｌＸ１ＩｎＸ２Ｇａ１－Ｘ１－Ｘ２Ｎ層１３ａにショットキ接合を成す。第１のＡｌＸ１ＩｎＸ２Ｇａ１－Ｘ１－Ｘ２Ｎ層１３ａ及び第２のＡｌＹ１ＩｎＹ２Ｇａ１－Ｙ１－Ｙ２Ｎ層１５は、基板２３上に設けられている。電極１７ａ、１８ａ、１９ａは、それぞれ、ソース電極、ゲート電極及びドレイン電極を含む。第１のＡｌＸ１ＩｎＸ２Ｇａ１－Ｘ１－Ｘ２Ｎ層１３ａの炭素濃度ＮＣ１３は１×１０１７ｃｍ－３未満である。第２のＡｌＹ１ＩｎＹ２Ｇａ１－Ｙ１－Ｙ２Ｎ層１５の転位密度Ｄが１×１０８ｃｍ－２である。ヘテロ接合２１により、二次元電子ガス層２５が生成される。これによって、低損失な窒化ガリウム系電子デバイスを提供する。
PCT/JP2008/069564 2007-11-02 2008-10-28 Iii族窒化物電子デバイス及びiii族窒化物半導体エピタキシャル基板 WO2009057601A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08845789A EP2211376A4 (en) 2007-11-02 2008-10-28 III NITRIDE ELECTRONIC ELEMENT AND III NITRIDE SEMICONDUCTOR PITAXIAL SUBSTRATE
US12/740,770 US8541816B2 (en) 2007-11-02 2008-10-28 III nitride electronic device and III nitride semiconductor epitaxial substrate
CN2008801142642A CN101842884B (zh) 2007-11-02 2008-10-28 Ⅲ族氮化物电子器件及ⅲ族氮化物半导体外延衬底

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007286534A JP4462330B2 (ja) 2007-11-02 2007-11-02 Ｉｉｉ族窒化物電子デバイス
JP2007-286534 2007-11-02

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WO2009057601A1 true WO2009057601A1 (ja) 2009-05-07

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Country Status (7)

Country Link
US (1) US8541816B2 (ja)
EP (1) EP2211376A4 (ja)
JP (1) JP4462330B2 (ja)
KR (1) KR20100074187A (ja)
CN (1) CN101842884B (ja)
TW (1) TW200937634A (ja)
WO (1) WO2009057601A1 (ja)

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JP4462330B2 (ja) 2007-11-02 2010-05-12 住友電気工業株式会社 Ｉｉｉ族窒化物電子デバイス
JP2011035066A (ja) * 2009-07-30 2011-02-17 Sumitomo Electric Ind Ltd 窒化物半導体素子、及び窒化物半導体素子を作製する方法
JP2010045416A (ja) * 2009-11-25 2010-02-25 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物電子デバイス
JP2012033575A (ja) * 2010-07-28 2012-02-16 Sumitomo Electric Ind Ltd 半導体装置
JP2013033930A (ja) * 2011-06-29 2013-02-14 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、及び、ｉｉｉ族窒化物半導体素子の製造方法
JP6015053B2 (ja) * 2012-03-26 2016-10-26 富士通株式会社 半導体装置の製造方法及び窒化物半導体結晶の製造方法
JP5656930B2 (ja) * 2012-07-05 2015-01-21 古河電気工業株式会社 窒化物系化合物半導体素子
EP2720257A4 (en) * 2012-08-10 2015-09-23 Ngk Insulators Ltd SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
EP2888390A1 (en) * 2012-08-24 2015-07-01 Sixpoint Materials Inc. A bismuth-doped semi-insulating group iii nitride wafer and its production method
JP5787417B2 (ja) * 2013-05-14 2015-09-30 コバレントマテリアル株式会社 窒化物半導体基板
JP6175009B2 (ja) * 2014-02-06 2017-08-02 住友化学株式会社 高耐圧窒化ガリウム系半導体デバイス及びその製造方法
JP2015176936A (ja) * 2014-03-13 2015-10-05 株式会社東芝 半導体装置
JP6305137B2 (ja) * 2014-03-18 2018-04-04 住友化学株式会社 窒化物半導体積層物および半導体装置
JP6249868B2 (ja) * 2014-04-18 2017-12-20 サンケン電気株式会社 半導体基板及び半導体素子
US9419125B1 (en) 2015-06-16 2016-08-16 Raytheon Company Doped barrier layers in epitaxial group III nitrides
JP6682391B2 (ja) 2016-07-22 2020-04-15 株式会社東芝 半導体装置、電源回路、及び、コンピュータ
CN117542887B (zh) * 2024-01-10 2024-04-30 英诺赛科（珠海）科技有限公司 一种氮化镓射频器件以及制备方法

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Also Published As

Publication number Publication date
EP2211376A1 (en) 2010-07-28
KR20100074187A (ko) 2010-07-01
EP2211376A4 (en) 2012-04-04
US8541816B2 (en) 2013-09-24
CN101842884A (zh) 2010-09-22
JP4462330B2 (ja) 2010-05-12
CN101842884B (zh) 2012-05-16
TW200937634A (en) 2009-09-01
US20100230687A1 (en) 2010-09-16
JP2009117482A (ja) 2009-05-28

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