WO2009040892A1 - 方向が均一で、かつ方向を変えることができる磁場が生成可能な磁石アセンブリ及びこれを用いたスパッタリング装置 - Google Patents

方向が均一で、かつ方向を変えることができる磁場が生成可能な磁石アセンブリ及びこれを用いたスパッタリング装置 Download PDF

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Publication number
WO2009040892A1
WO2009040892A1 PCT/JP2007/068627 JP2007068627W WO2009040892A1 WO 2009040892 A1 WO2009040892 A1 WO 2009040892A1 JP 2007068627 W JP2007068627 W JP 2007068627W WO 2009040892 A1 WO2009040892 A1 WO 2009040892A1
Authority
WO
WIPO (PCT)
Prior art keywords
sub
assembly
magnetic field
magnet
changeable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/068627
Other languages
English (en)
French (fr)
Inventor
Einstein Noel Abarra
Tetsuya Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2008529397A priority Critical patent/JPWO2009040892A1/ja
Priority to PCT/JP2007/068627 priority patent/WO2009040892A1/ja
Priority to CNA200780019169XA priority patent/CN101553594A/zh
Priority to US12/145,456 priority patent/US20090078571A1/en
Publication of WO2009040892A1 publication Critical patent/WO2009040892A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0273—Magnetic circuits with PM for magnetic field generation
    • H01F7/0278—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles
    • H01F7/0284—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles using a trimmable or adjustable magnetic circuit, e.g. for a symmetric dipole or quadrupole magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　永久磁石と当該永久磁石の両端の各々に結合された磁気透過性の凸状端部とを含む回転可能な双極子磁石サブアセンブリと、双極子磁石サブアセンブリに磁気的に結合されるように構成された少なくとも２つの磁気透過性の磁束ガイドサブアセンブリとを具備する。磁束ガイドサブアセンブリは上記凸状端部と嵌合する凹状端部を有する。磁束ガイドサブアセンブリは、双極子磁石サブアセンブリからの磁束を導いて外部に磁場を生じさせる。双極子磁石サブアセンブリを回転して磁束ガイドサブアセンブリとの嵌合状態を反転させることにより、外部に生じる磁場の方向を容易に反転させることができる。
PCT/JP2007/068627 2007-09-26 2007-09-26 方向が均一で、かつ方向を変えることができる磁場が生成可能な磁石アセンブリ及びこれを用いたスパッタリング装置 Ceased WO2009040892A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008529397A JPWO2009040892A1 (ja) 2007-09-26 2007-09-26 方向が均一で、かつ方向を変えることができる磁場が生成可能な磁石アセンブリ及びこれを用いたスパッタリング装置
PCT/JP2007/068627 WO2009040892A1 (ja) 2007-09-26 2007-09-26 方向が均一で、かつ方向を変えることができる磁場が生成可能な磁石アセンブリ及びこれを用いたスパッタリング装置
CNA200780019169XA CN101553594A (zh) 2007-09-26 2007-09-26 能够生成具有均一且可改变的方向的磁场的磁体组件及使用该磁体组件的溅镀设备
US12/145,456 US20090078571A1 (en) 2007-09-26 2008-06-24 Magnet assembly capable of generating magnetic field having direction that is uniform and can be changed and sputtering apparatus using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/068627 WO2009040892A1 (ja) 2007-09-26 2007-09-26 方向が均一で、かつ方向を変えることができる磁場が生成可能な磁石アセンブリ及びこれを用いたスパッタリング装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/145,456 Continuation US20090078571A1 (en) 2007-09-26 2008-06-24 Magnet assembly capable of generating magnetic field having direction that is uniform and can be changed and sputtering apparatus using the same

Publications (1)

Publication Number Publication Date
WO2009040892A1 true WO2009040892A1 (ja) 2009-04-02

Family

ID=40470487

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/068627 Ceased WO2009040892A1 (ja) 2007-09-26 2007-09-26 方向が均一で、かつ方向を変えることができる磁場が生成可能な磁石アセンブリ及びこれを用いたスパッタリング装置

Country Status (4)

Country Link
US (1) US20090078571A1 (ja)
JP (1) JPWO2009040892A1 (ja)
CN (1) CN101553594A (ja)
WO (1) WO2009040892A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100305402A1 (en) * 2009-05-29 2010-12-02 Magnetecs,Inc. Method and apparatus for magnetic waveguide forming a shaped field employing a magnetic aperture for guiding and controlling a medical device
US8232532B2 (en) * 2009-06-23 2012-07-31 Hitachi Global Storage Technologies Netherlands B.V. Off-axis ion milling device for manufacture of magnetic recording media and method for using the same
US20110112396A1 (en) 2009-11-09 2011-05-12 Magnetecs, Inc. System and method for targeting catheter electrodes
US20130146451A1 (en) * 2011-12-07 2013-06-13 Intermolecular, Inc. Magnetic Confinement and Directionally Driven Ionized Sputtered Films For Combinatorial Processing
US10727034B2 (en) 2017-08-16 2020-07-28 Sputtering Components, Inc. Magnetic force release for sputtering sources with magnetic target materials
CN112967857B (zh) * 2020-04-17 2023-12-15 北京中科三环高技术股份有限公司 永磁装置
US11915915B2 (en) * 2021-05-28 2024-02-27 Applied Materials, Inc. Apparatus for generating magnetic fields during semiconductor processing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161704A (ja) * 1985-01-11 1986-07-22 Hitachi Ltd 単軸磁気異方性膜の製造方法
JPH1012432A (ja) * 1996-06-26 1998-01-16 Shin Etsu Chem Co Ltd 可変磁場型磁気回路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130005A (en) * 1990-10-31 1992-07-14 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
US5399253A (en) * 1992-12-23 1995-03-21 Balzers Aktiengesellschaft Plasma generating device
US5415754A (en) * 1993-10-22 1995-05-16 Sierra Applied Sciences, Inc. Method and apparatus for sputtering magnetic target materials
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
JP4219566B2 (ja) * 2001-03-30 2009-02-04 株式会社神戸製鋼所 スパッタ装置
US7038565B1 (en) * 2003-06-09 2006-05-02 Astronautics Corporation Of America Rotating dipole permanent magnet assembly
US6818961B1 (en) * 2003-06-30 2004-11-16 Freescale Semiconductor, Inc. Oblique deposition to induce magnetic anisotropy for MRAM cells
KR20070004751A (ko) * 2004-03-22 2007-01-09 오씨 외를리콘 발처스 악티엔게젤샤프트 박막제조용 스퍼터 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161704A (ja) * 1985-01-11 1986-07-22 Hitachi Ltd 単軸磁気異方性膜の製造方法
JPH1012432A (ja) * 1996-06-26 1998-01-16 Shin Etsu Chem Co Ltd 可変磁場型磁気回路

Also Published As

Publication number Publication date
CN101553594A (zh) 2009-10-07
US20090078571A1 (en) 2009-03-26
JPWO2009040892A1 (ja) 2011-01-13

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