WO2009028452A1 - Method for producing metal oxide semiconductor and thin film transistor using oxide semiconductor thin film produced by the method - Google Patents

Method for producing metal oxide semiconductor and thin film transistor using oxide semiconductor thin film produced by the method Download PDF

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Publication number
WO2009028452A1
WO2009028452A1 PCT/JP2008/065098 JP2008065098W WO2009028452A1 WO 2009028452 A1 WO2009028452 A1 WO 2009028452A1 JP 2008065098 W JP2008065098 W JP 2008065098W WO 2009028452 A1 WO2009028452 A1 WO 2009028452A1
Authority
WO
WIPO (PCT)
Prior art keywords
oxide semiconductor
thin film
metal oxide
film transistor
producing metal
Prior art date
Application number
PCT/JP2008/065098
Other languages
French (fr)
Japanese (ja)
Inventor
Katsura Hirai
Makoto Honda
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to JP2009530105A priority Critical patent/JPWO2009028452A1/en
Publication of WO2009028452A1 publication Critical patent/WO2009028452A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention aims to obtain a metal oxide semiconductor having high carrier mobility and high stability. The present invention also aims to obtain a method for producing a metal oxide semiconductor which is improved in production efficiency. A stably operable thin film transistor (TFT) element can be obtained by using such a metal oxide semiconductor. Specifically disclosed is a method for producing a metal oxide semiconductor, which is characterized in that a thin film containing a precursor of a metal oxide semiconductor is formed on a substrate and then the thin film is subjected to plasma oxidation.
PCT/JP2008/065098 2007-08-27 2008-08-25 Method for producing metal oxide semiconductor and thin film transistor using oxide semiconductor thin film produced by the method WO2009028452A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009530105A JPWO2009028452A1 (en) 2007-08-27 2008-08-25 Method of manufacturing metal oxide semiconductor and thin film transistor using oxide semiconductor thin film manufactured using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007219622 2007-08-27
JP2007-219622 2007-08-27

Publications (1)

Publication Number Publication Date
WO2009028452A1 true WO2009028452A1 (en) 2009-03-05

Family

ID=40387172

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065098 WO2009028452A1 (en) 2007-08-27 2008-08-25 Method for producing metal oxide semiconductor and thin film transistor using oxide semiconductor thin film produced by the method

Country Status (2)

Country Link
JP (1) JPWO2009028452A1 (en)
WO (1) WO2009028452A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009221071A (en) * 2008-03-18 2009-10-01 Lintec Corp Method for forming film of metal oxide
JP2011100723A (en) * 2009-10-09 2011-05-19 Semiconductor Energy Lab Co Ltd Light emitting display device and electronic device having the same
WO2014170972A1 (en) * 2013-04-17 2014-10-23 東芝三菱電機産業システム株式会社 Film forming method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244464A (en) * 2000-03-02 2001-09-07 Sanyo Electric Works Ltd Method of manufacturing metal oxide transistor
JP2003197282A (en) * 2001-12-27 2003-07-11 Toppan Printing Co Ltd Dye sensitized solar battery
WO2006129461A1 (en) * 2005-06-01 2006-12-07 Konica Minolta Holdings, Inc. Thin film forming method and transparent conductive film
JP2007042689A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Metal alkoxide solution, manufacturing method of semiconductor device using the same, and semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244464A (en) * 2000-03-02 2001-09-07 Sanyo Electric Works Ltd Method of manufacturing metal oxide transistor
JP2003197282A (en) * 2001-12-27 2003-07-11 Toppan Printing Co Ltd Dye sensitized solar battery
WO2006129461A1 (en) * 2005-06-01 2006-12-07 Konica Minolta Holdings, Inc. Thin film forming method and transparent conductive film
JP2007042689A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Metal alkoxide solution, manufacturing method of semiconductor device using the same, and semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009221071A (en) * 2008-03-18 2009-10-01 Lintec Corp Method for forming film of metal oxide
JP2011100723A (en) * 2009-10-09 2011-05-19 Semiconductor Energy Lab Co Ltd Light emitting display device and electronic device having the same
US9318654B2 (en) 2009-10-09 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and electronic device including the same
US10411158B2 (en) 2009-10-09 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device having oxide semiconductor layer overlapping with adjacent pixel electrode
US10566497B2 (en) 2009-10-09 2020-02-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device including a first pixel and a second pixel
US11355669B2 (en) 2009-10-09 2022-06-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and electronic device including an oxide semiconductor layer
US11901485B2 (en) 2009-10-09 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device having a first pixel and a second pixel and an oxide semiconductor layer having a region overlapping a light-emitting region of the second pixel
WO2014170972A1 (en) * 2013-04-17 2014-10-23 東芝三菱電機産業システム株式会社 Film forming method
CN105121699A (en) * 2013-04-17 2015-12-02 东芝三菱电机产业系统株式会社 Film forming method
US20160047037A1 (en) * 2013-04-17 2016-02-18 Toshiba Mitsubishi-Electric Industrial Systems Corporation Film formation method
JPWO2014170972A1 (en) * 2013-04-17 2017-02-16 東芝三菱電機産業システム株式会社 Deposition method

Also Published As

Publication number Publication date
JPWO2009028452A1 (en) 2010-12-02

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