WO2009017221A1 - 高強度柱状晶シリコン並びにこの高強度柱状晶シリコンからなるプラズマエッチング装置用部品 - Google Patents

高強度柱状晶シリコン並びにこの高強度柱状晶シリコンからなるプラズマエッチング装置用部品 Download PDF

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Publication number
WO2009017221A1
WO2009017221A1 PCT/JP2008/063863 JP2008063863W WO2009017221A1 WO 2009017221 A1 WO2009017221 A1 WO 2009017221A1 JP 2008063863 W JP2008063863 W JP 2008063863W WO 2009017221 A1 WO2009017221 A1 WO 2009017221A1
Authority
WO
WIPO (PCT)
Prior art keywords
crystal silicon
columnar crystal
strength
plasma etching
strength columnar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063863
Other languages
English (en)
French (fr)
Inventor
Junichi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008192031A external-priority patent/JP2009051724A/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to CN2008800198744A priority Critical patent/CN101681831B/zh
Priority to US12/452,217 priority patent/US20100124528A1/en
Publication of WO2009017221A1 publication Critical patent/WO2009017221A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

　この発明は、高強度を有する柱状晶シリコンに関するものであり、格子間酸素濃度が、１×１０１８～２×１０１８ａｔｍｓ／ｃｍ３の範囲内にある高強度柱状晶シリコンインゴットから作製したフォーカスリング、上部電極板およびシールドリングなどのプラズマエッチング装置用部品は、厚さを大きくすることなくその径を一層大きくすることができる。
PCT/JP2008/063863 2007-08-01 2008-08-01 高強度柱状晶シリコン並びにこの高強度柱状晶シリコンからなるプラズマエッチング装置用部品 Ceased WO2009017221A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800198744A CN101681831B (zh) 2007-08-01 2008-08-01 高强度柱状结晶硅和由该高强度柱状结晶硅构成的等离子体蚀刻装置用部件
US12/452,217 US20100124528A1 (en) 2007-08-01 2008-08-01 High-strength columnar crystal silicon part of plasma etching device consisting thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-200965 2007-08-01
JP2007200965 2007-08-01
JP2008192031A JP2009051724A (ja) 2007-08-01 2008-07-25 高強度柱状晶シリコン並びにこの高強度柱状晶シリコンからなるプラズマエッチング装置用部品
JP2008-192031 2008-07-25

Publications (1)

Publication Number Publication Date
WO2009017221A1 true WO2009017221A1 (ja) 2009-02-05

Family

ID=40304450

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063863 Ceased WO2009017221A1 (ja) 2007-08-01 2008-08-01 高強度柱状晶シリコン並びにこの高強度柱状晶シリコンからなるプラズマエッチング装置用部品

Country Status (1)

Country Link
WO (1) WO2009017221A1 (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001198648A (ja) * 2000-01-11 2001-07-24 Mitsubishi Materials Corp シリコンインゴット鋳造用鋳型およびその製造方法
JP2003051485A (ja) * 2001-08-03 2003-02-21 Mitsubishi Materials Corp プラズマエッチング用被覆シリコン電極板
JP2005303045A (ja) * 2004-04-13 2005-10-27 Mitsubishi Materials Corp シリコン部材およびその製造方法
JP2007081381A (ja) * 2005-08-18 2007-03-29 Mitsubishi Materials Corp プラズマエッチング装置用シリコンリング

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001198648A (ja) * 2000-01-11 2001-07-24 Mitsubishi Materials Corp シリコンインゴット鋳造用鋳型およびその製造方法
JP2003051485A (ja) * 2001-08-03 2003-02-21 Mitsubishi Materials Corp プラズマエッチング用被覆シリコン電極板
JP2005303045A (ja) * 2004-04-13 2005-10-27 Mitsubishi Materials Corp シリコン部材およびその製造方法
JP2007081381A (ja) * 2005-08-18 2007-03-29 Mitsubishi Materials Corp プラズマエッチング装置用シリコンリング

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