WO2008152911A1 - Semiconductor device, and its manufacturing method - Google Patents

Semiconductor device, and its manufacturing method Download PDF

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Publication number
WO2008152911A1
WO2008152911A1 PCT/JP2008/059790 JP2008059790W WO2008152911A1 WO 2008152911 A1 WO2008152911 A1 WO 2008152911A1 JP 2008059790 W JP2008059790 W JP 2008059790W WO 2008152911 A1 WO2008152911 A1 WO 2008152911A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
realize
semiconductor substrate
drift region
enabled
Prior art date
Application number
PCT/JP2008/059790
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuhiko Kusuda
Takuya Sunada
Original Assignee
Panasonic Electric Works Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2007152621 priority Critical
Priority to JP2007-152621 priority
Priority to JP2007-220440 priority
Priority to JP2007220440A priority patent/JP2009016775A/en
Application filed by Panasonic Electric Works Co., Ltd. filed Critical Panasonic Electric Works Co., Ltd.
Publication of WO2008152911A1 publication Critical patent/WO2008152911A1/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816Lateral DMOS transistors, i.e. LDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642Isolation within the component, i.e. internal isolation
    • H01L29/0649Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681Lateral DMOS transistors, i.e. LDMOS transistors

Abstract

Provided are a semiconductor device having a drift region on one surface of a semiconductor substrate, and its manufacturing method. A simple constitution is enabled to realize the reduction of a parasitic capacitance and to raise a high withstand voltage by removing the semiconductor substrate at least partially, and is enabled to realize the reduction of the cost by improving a sufficient mechanical strength and a production yield. The semiconductor device (1) includes a drift region (3) (a region defined by right and left broken lines) on one surface (21) of a semiconductor substrate (2). At least one portion of the semiconductor substrate (2) is removed from the side of the other surface (22) to form the drift region (3) or a removed portion (23) leading to the vicinity of the former, and the removed portion (23) is filled with an insulating member (4) of glass or resin. The semiconductor device (1) is enabled to realize the reduction of the parasitic capacitance and the high withstand voltage by forming the removed portion (23) in the lower portion of the drift region (3), and to realize the sufficient mechanical strength by filling the insulating member (4).
PCT/JP2008/059790 2007-06-08 2008-05-28 Semiconductor device, and its manufacturing method WO2008152911A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007152621 2007-06-08
JP2007-152621 2007-06-08
JP2007-220440 2007-08-27
JP2007220440A JP2009016775A (en) 2007-06-08 2007-08-27 Semiconductor device, and manufacturing method thereof

Publications (1)

Publication Number Publication Date
WO2008152911A1 true WO2008152911A1 (en) 2008-12-18

Family

ID=40129522

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059790 WO2008152911A1 (en) 2007-06-08 2008-05-28 Semiconductor device, and its manufacturing method

Country Status (1)

Country Link
WO (1) WO2008152911A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002025700A2 (en) * 2000-09-21 2002-03-28 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
WO2004004013A1 (en) * 2002-06-26 2004-01-08 Cambridge Semiconductor Limited Lateral semiconductor device
WO2004053993A1 (en) * 2002-12-10 2004-06-24 Power Electronics Design Centre Power integrated circuits
JP2007059595A (en) * 2005-08-24 2007-03-08 Toshiba Corp Nitride semiconductor element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002025700A2 (en) * 2000-09-21 2002-03-28 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
WO2004004013A1 (en) * 2002-06-26 2004-01-08 Cambridge Semiconductor Limited Lateral semiconductor device
WO2004053993A1 (en) * 2002-12-10 2004-06-24 Power Electronics Design Centre Power integrated circuits
JP2007059595A (en) * 2005-08-24 2007-03-08 Toshiba Corp Nitride semiconductor element

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