WO2008149659A1 - シンチレータパネル及びイメージセンサ - Google Patents
シンチレータパネル及びイメージセンサ Download PDFInfo
- Publication number
- WO2008149659A1 WO2008149659A1 PCT/JP2008/059182 JP2008059182W WO2008149659A1 WO 2008149659 A1 WO2008149659 A1 WO 2008149659A1 JP 2008059182 W JP2008059182 W JP 2008059182W WO 2008149659 A1 WO2008149659 A1 WO 2008149659A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- scintillator
- dielectric layer
- image sensor
- scintillator panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Measurement Of Radiation (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
- Luminescent Compositions (AREA)
Abstract
本発明は、反射層の反射率を向上させ、光伝達効率が向上したシンチレータパネル及び放射線イメージセンサを提供する。この手段として、放射線を光に変換するシンチレータ層と、シンチレータ層を支持するための放射線透過性基板と、前記シンチレータ層で変換された光を外部へ出射するための反射層と、第1誘電体層と、第2誘電体層とを備えたシンチレータパネルにおいて、前記各層を、該放射性透過性基板から、該反射層、該第1誘電体層、該第2誘電体層、該シンチレータ層の順に配置し、かつ、該第1誘電体層の屈折率が該第2誘電体層の屈折率より小さいことを特徴とするシンチレータパネル及び放射線イメージセンサを特徴とする。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009517772A JPWO2008149659A1 (ja) | 2007-05-31 | 2008-05-20 | シンチレータパネル及びイメージセンサ |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007144901 | 2007-05-31 | ||
| JP2007-144901 | 2007-05-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008149659A1 true WO2008149659A1 (ja) | 2008-12-11 |
Family
ID=40093484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/059182 Ceased WO2008149659A1 (ja) | 2007-05-31 | 2008-05-20 | シンチレータパネル及びイメージセンサ |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2008149659A1 (ja) |
| WO (1) | WO2008149659A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11828889B2 (en) | 2019-07-31 | 2023-11-28 | Canon Kabushiki Kaisha | Scintillator unit and radiation detector |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10160898A (ja) * | 1996-11-29 | 1998-06-19 | Sony Corp | 蛍光体素子及び放射線像観測装置 |
| JP2004061115A (ja) * | 2002-07-24 | 2004-02-26 | Canon Inc | シンチレーターパネル、放射線検出装置及び放射線撮像システム |
-
2008
- 2008-05-20 JP JP2009517772A patent/JPWO2008149659A1/ja active Pending
- 2008-05-20 WO PCT/JP2008/059182 patent/WO2008149659A1/ja not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10160898A (ja) * | 1996-11-29 | 1998-06-19 | Sony Corp | 蛍光体素子及び放射線像観測装置 |
| JP2004061115A (ja) * | 2002-07-24 | 2004-02-26 | Canon Inc | シンチレーターパネル、放射線検出装置及び放射線撮像システム |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11828889B2 (en) | 2019-07-31 | 2023-11-28 | Canon Kabushiki Kaisha | Scintillator unit and radiation detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2008149659A1 (ja) | 2010-08-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2535955A3 (en) | Encapsulating sheet and optical semiconductor element device | |
| WO2010067209A3 (en) | Mosaic solar collector | |
| WO2008143773A3 (en) | Single crystal phosphor light conversion structures for light emitting devices | |
| EP2466367A3 (en) | Light emitting module and backlight unit using the same | |
| WO2009142462A3 (ko) | 유기 발광 소자 및 이의 제조방법 | |
| EP2362452A3 (en) | Light emitting device package and lighting system | |
| WO2011093586A3 (ko) | 발광소자와 태양전지 성능을 포함하는 전자소자 | |
| EP2372796A3 (en) | Light emitting diode package and light unit having the same | |
| EP2216683A3 (en) | Coating compositions suitable for use with an overcoated photoresist | |
| WO2010118418A3 (en) | Planar plasmonic device for light reflection, diffusion and guiding | |
| JP2012038452A5 (ja) | ||
| WO2009024952A3 (en) | Light source including reflective wavelength-converting layer | |
| JP2012107960A5 (ja) | ||
| WO2011008240A3 (en) | Bifacial photovoltaic module with reflective elements and method of making same | |
| JP2008091911A5 (ja) | ||
| WO2009124098A3 (en) | A solar panel back sheet with improved heat dissipation | |
| WO2010150202A3 (en) | Illumination apparatus with high conversion efficiency and methods of forming the same | |
| WO2009088410A3 (en) | Light emitting devices with high efficiency phospor structures | |
| WO2011030240A3 (en) | Imaging measurement system with a printed photodetector array | |
| WO2009086028A3 (en) | Carbazole-containing materials in phosphorescent light emitting diodes | |
| WO2009135114A3 (en) | Transparent conductive materials including cadmium stannate | |
| WO2009107003A8 (en) | Lighting unit with photosensor | |
| WO2007089581A3 (en) | Remote controlled led light bulb | |
| WO2010004453A3 (en) | Radiation detector and a method of manufacturing a radiation detector | |
| WO2009158138A8 (en) | Semiconductor light converting construction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08752978 Country of ref document: EP Kind code of ref document: A1 |
|
| ENP | Entry into the national phase |
Ref document number: 2009517772 Country of ref document: JP Kind code of ref document: A |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 08752978 Country of ref document: EP Kind code of ref document: A1 |