WO2008139569A1 - Electron beam exposure device and electron beam exposure method - Google Patents

Electron beam exposure device and electron beam exposure method Download PDF

Info

Publication number
WO2008139569A1
WO2008139569A1 PCT/JP2007/059524 JP2007059524W WO2008139569A1 WO 2008139569 A1 WO2008139569 A1 WO 2008139569A1 JP 2007059524 W JP2007059524 W JP 2007059524W WO 2008139569 A1 WO2008139569 A1 WO 2008139569A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
deflection
beam exposure
deflect
pattern data
Prior art date
Application number
PCT/JP2007/059524
Other languages
French (fr)
Japanese (ja)
Inventor
Masaki Kurokawa
Hiroshi Yasuda
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Priority to JP2008514264A priority Critical patent/JP5350784B2/en
Priority to PCT/JP2007/059524 priority patent/WO2008139569A1/en
Publication of WO2008139569A1 publication Critical patent/WO2008139569A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

[PROBLEMS TO BE SOLVED] An electron beam exposure device and an electron beam exposure method are provided for making it possible to easily shorten a waiting time for setting deflection, so that the throughput can be improved. [MEANS FOR SOLVING THE PROBLEMS] An electron beam exposure device is provided with a electron gun that emits an electron beam, a memory means that stores pattern data, a deflection means that deflects the electron beam, and a control means that seeks a position on a deflection orbit in timing prior to setting the electron beam from the deflection orbit of the electron beam deflected by the deflection means, changes the pattern data based on the position information, and makes the deflection means deflect the electron beam in accordance with the changed pattern data. The deflection means is comprised of a coil. When the control means supplies the electric current to deflect the electron beam, the control means detects an electronic current value that makes the shortest time until a change rate of the electron beam irradiated position becomes smaller than a predetermined value, so that the electronic current value may be supplied to the coil to deflect the electron beam.
PCT/JP2007/059524 2007-05-08 2007-05-08 Electron beam exposure device and electron beam exposure method WO2008139569A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008514264A JP5350784B2 (en) 2007-05-08 2007-05-08 Electron beam exposure apparatus and electron beam exposure method
PCT/JP2007/059524 WO2008139569A1 (en) 2007-05-08 2007-05-08 Electron beam exposure device and electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/059524 WO2008139569A1 (en) 2007-05-08 2007-05-08 Electron beam exposure device and electron beam exposure method

Publications (1)

Publication Number Publication Date
WO2008139569A1 true WO2008139569A1 (en) 2008-11-20

Family

ID=40001801

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/059524 WO2008139569A1 (en) 2007-05-08 2007-05-08 Electron beam exposure device and electron beam exposure method

Country Status (2)

Country Link
JP (1) JP5350784B2 (en)
WO (1) WO2008139569A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016219577A (en) * 2015-05-19 2016-12-22 株式会社ニューフレアテクノロジー Charged particle beam lithography apparatus and charged particle beam lithography method
US11854764B2 (en) 2021-03-17 2023-12-26 Nuflare Technology, Inc. Charged particle beam writing device and charged particle beam writing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63147321A (en) * 1986-12-10 1988-06-20 Fujitsu Ltd Charged-beam exposure system
JPH07142351A (en) * 1993-11-17 1995-06-02 Nec Corp Electron beam exposure apparatus and electron beam deflection method
JPH07312338A (en) * 1994-05-18 1995-11-28 Fujitsu Ltd Method and apparatus for charged-particle-beam exposure
JPH09246146A (en) * 1996-03-04 1997-09-19 Hitachi Ltd Method and apparatus for electron-beam lithography

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63147321A (en) * 1986-12-10 1988-06-20 Fujitsu Ltd Charged-beam exposure system
JPH07142351A (en) * 1993-11-17 1995-06-02 Nec Corp Electron beam exposure apparatus and electron beam deflection method
JPH07312338A (en) * 1994-05-18 1995-11-28 Fujitsu Ltd Method and apparatus for charged-particle-beam exposure
JPH09246146A (en) * 1996-03-04 1997-09-19 Hitachi Ltd Method and apparatus for electron-beam lithography

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016219577A (en) * 2015-05-19 2016-12-22 株式会社ニューフレアテクノロジー Charged particle beam lithography apparatus and charged particle beam lithography method
US11854764B2 (en) 2021-03-17 2023-12-26 Nuflare Technology, Inc. Charged particle beam writing device and charged particle beam writing method
TWI837593B (en) * 2021-03-17 2024-04-01 日商紐富來科技股份有限公司 Charged particle beam drawing device and charged particle beam drawing method

Also Published As

Publication number Publication date
JPWO2008139569A1 (en) 2010-07-29
JP5350784B2 (en) 2013-11-27

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