WO2008132971A1 - Semiconductor memory - Google Patents

Semiconductor memory Download PDF

Info

Publication number
WO2008132971A1
WO2008132971A1 PCT/JP2008/056854 JP2008056854W WO2008132971A1 WO 2008132971 A1 WO2008132971 A1 WO 2008132971A1 JP 2008056854 W JP2008056854 W JP 2008056854W WO 2008132971 A1 WO2008132971 A1 WO 2008132971A1
Authority
WO
WIPO (PCT)
Prior art keywords
current
bit line
memory cell
drain
voltage
Prior art date
Application number
PCT/JP2008/056854
Other languages
French (fr)
Japanese (ja)
Inventor
Noboru Sakimura
Koichi Takeda
Tadahiko Sugibayashi
Ryuusuke Nebashi
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Publication of WO2008132971A1 publication Critical patent/WO2008132971A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)

Abstract

Provided is a semiconductor memory by which a time required for bringing a source voltage and a drain voltage of a clamping transistor into a steady state can be shortened. The semiconductor memory includes a memory cell (11), which includes a storage element (11b) wherein a resistance value changes by storage information; a bit line (2) connected to the memory cell (11); and a current detecting means (4), which applies a discretionary voltage to the bit line (2) to permit a current to flow in the memory cell (11) and detects the current. The current detecting means (4) includes an inverting amplifier means (41) for inverting and amplifying the potential of the bit line (2); a detecting load means (42) connected to a power supply; a clamping transistor (M1) wherein a gate receives output from the inverting amplifier means (41), a drain receives a current from the power supply through the detecting load means (42), a source applies a discretionary potential to the bit line (2) and supplies the memory cell (11) with a current; and a current supply means (M2) which supplies the drain with an auxiliary current until the source voltage and the drain voltage of the clamping transistor (M1) are brought into the steady state, and stops supply of the auxiliary current when the voltages are in the steady state.
PCT/JP2008/056854 2007-04-25 2008-04-07 Semiconductor memory WO2008132971A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007115751 2007-04-25
JP2007-115751 2007-04-25

Publications (1)

Publication Number Publication Date
WO2008132971A1 true WO2008132971A1 (en) 2008-11-06

Family

ID=39925430

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056854 WO2008132971A1 (en) 2007-04-25 2008-04-07 Semiconductor memory

Country Status (1)

Country Link
WO (1) WO2008132971A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013145733A1 (en) * 2012-03-29 2013-10-03 パナソニック株式会社 Cross-point resistance change non-volatile storage device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63253598A (en) * 1987-04-10 1988-10-20 Nec Ic Microcomput Syst Ltd Rom device
JPS63313397A (en) * 1987-06-16 1988-12-21 Ricoh Co Ltd Sense amplifying circuit device for storage device
JPH07169290A (en) * 1993-12-14 1995-07-04 Nec Corp Semiconductor memory
JPH11120783A (en) * 1997-10-09 1999-04-30 Nec Corp Semiconductor memory
JP2004071067A (en) * 2002-08-07 2004-03-04 Sharp Corp Readout circuit for memory cell information and semiconductor storage device
WO2006085459A1 (en) * 2005-02-08 2006-08-17 Nec Corporation Semiconductor storage device and method for reading semiconductor storage device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63253598A (en) * 1987-04-10 1988-10-20 Nec Ic Microcomput Syst Ltd Rom device
JPS63313397A (en) * 1987-06-16 1988-12-21 Ricoh Co Ltd Sense amplifying circuit device for storage device
JPH07169290A (en) * 1993-12-14 1995-07-04 Nec Corp Semiconductor memory
JPH11120783A (en) * 1997-10-09 1999-04-30 Nec Corp Semiconductor memory
JP2004071067A (en) * 2002-08-07 2004-03-04 Sharp Corp Readout circuit for memory cell information and semiconductor storage device
WO2006085459A1 (en) * 2005-02-08 2006-08-17 Nec Corporation Semiconductor storage device and method for reading semiconductor storage device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013145733A1 (en) * 2012-03-29 2013-10-03 パナソニック株式会社 Cross-point resistance change non-volatile storage device
JP5379337B1 (en) * 2012-03-29 2013-12-25 パナソニック株式会社 Cross-point variable resistance nonvolatile memory device
US9053788B2 (en) 2012-03-29 2015-06-09 Panasonic Intellectual Property Management Co., Ltd. Cross-point variable resistance nonvolatile memory device

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