WO2008127616A1

WO2008127616A1 - Method and apparatus for testing page decoder

Info

Publication number: WO2008127616A1
Application number: PCT/US2008/004637
Authority: WO
Inventors: Ciro Corcelli
Original assignee: Atmel Corp
Current assignee: Atmel Corp
Priority date: 2007-04-13
Filing date: 2008-04-10
Publication date: 2008-10-23
Anticipated expiration: 2009-10-13
Also published as: US20080253207A1; DE112008000991T5; US7646645B2; TW200907991A; CN101669174A

Abstract

A method (300) and apparatus for testing correct operation of a page decoder in a memory is provided. In one implementation, the method includes erasing the memory (302) to reset all memory cells associated with each of the N pages in the memory, and iteratively generating a unique bit sequence of M bits (304) and programming the unique bit sequence into a plurality of the N pages (306) at a given time until each of -the N pages contains a unique bit sequence relative to other pages in the memory (308). Responsive to each of the N pages having a unique bit sequence, the method further includes using the page decoder to read out each unique bit sequence associated with the N pages to verify correct operation of the page decoder (310).

Description

METHOD AND APPARATUS FOR TESTING PAGE DECODER

CLAIM OF PRIORTY

[0001] Benefit of priority is hereby claimed to U.S. Patent Application

Serial Number 11/735,182, filed on April 13, 2007, which application is herein incorporated by reference.

FIELD

[0002] Embodiments disclosed in this document relate generally to digital circuits, and more particularly to address decoders.

BACKGROUND

[0003] Flash memory is a non-volatile computer memory that can be electrically erased and reprogrammed. FIG. 1 illustrates a conventional flash memory 100 organized into pages (e.g., pages 1-N). Each page (1-N) generally contains several words, and each word contains a pre-determined number of bits (e.g., 16 bits). Each word of a given page can be accessed with a pointer (or program counter) by means of an address decoder. As shown in FIG. 1 , the address decoder is composed of a page decoder 102 and a word decoder 104. hi particular, during a read from the flash memory 100, the page decoder 102 decodes the most significant bits of the program counter to determine which page to select, and the word decoder 104 decodes the least significant bits of the program counter to determine which word (within a selected page) is to be read. Each word has a group of bit lines (same size as the word size) that goes high when the corresponding word is selected. The word decoder 104 selects the correct bit lines that are used to multiplex the data onto an instructions bus (not shown). To write to the flash memory 100, page latches 106 are loaded with data. The least significant bits of the program counter are typically used to load the data to the correct portion of the page latches 106 in a similar fashion as in the word decoder (or the same word decoder can be used). Each page latch is connected to a corresponding bit line. During a read, the output from the page latches 106 is typically tri-stated to avoid drive contention. [0004] Testing correct operation of a flash memory typically requires testing the functionality of both the word decoder and the page decoder. Testing the functionality of a word decoder is usually not an issue because it is generally sufficient to program - i.e., write values into - only one page and then read back the values programmed into the page. Testing the functionality of a page decoder, however, typically requires programming all pages within a flash memory. That is, a unique signature is written into each page of the flash memory, which unique signature is subsequently read from each page of the flash memory. This guarantees that the page decoder points to correct locations within the flash memory. Yet, programming each page of a flash memory is a very time-consuming process, and test time is an important factor in production flow. Another method for testing the functionality of a page decoder is to insert observation points (e.g., a scan chain) at the output of the page decoder. If the page decoder works properly, then only one line (used to access a page) is active at a time. Such a method, however, does not guarantee that the connection between the output lines and the pages is free of any faults. [0005] The details of one or more implementation embodiments are set forth in the accompanying drawings and the description below. Other features and advantages will be apparent from the description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

[0006] FIG. l is a block diagram of a conventional flash memory;

[0007] FIG. 2 is a block diagram of a flash memory in accordance with some embodiments;

[0008] FIG. 3 is a method for testing the functionality of a page decoder of a flash memory in accordance with some embodiments;

[0009] FIG. 4 is a schematic diagram of a page decoder in accordance with some embodiments; and

[0010] FIG. 5 is a block diagram of a memory including a page decoder in accordance with some embodiments. DETAILED DESCRIPTION

[0011] Embodiments of the present invention relate generally to digital circuits, and more particularly to address decoders. The following description of the various embodiments is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. The present invention is not intended to be limited to the embodiments shown but is to be accorded the widest scope consistent with the principles and features described and claimed herein. Like reference symbols in the various drawings indicate like elements.

[0012] FIG. 2 illustrates a flash memory 200 in accordance with one implementation. In one implementation, the flash memory 200 is organized into pages (e.g., pages 1-N), and includes an address decoder (comprised of a page decoder 202 and a word decoder 204) for accessing each word of a given page within the flash memory 200. In one implementation, during a read from the flash memory 200, the page decoder 202 decodes the most significant bits of a program counter (not shown) to determine which page to select, and the word decoder 204 decodes the least significant bits of the program counter to determine which word (within a selected page) is to be read. In one implementation, to write to the flash memory 200, page latches 206 are loaded with data (or bit sequences) that are to be written to corresponding bit locations (or memory cells) within the flash memory 200 - i.e., each page latch is connected to a corresponding bit line. The least significant bits of the program counter can be used to load the data to the correct portion of the page latches 206. In one implementation, each memory cell of the flash memory 200 is written to by setting a logic level of the memory cell to zero. Accordingly, in this implementation, erasing a memory cell requires setting the logic level of the memory cell to one. In one implementation, during a programming operation, an entire page is written to at once and the resulting logical value of the memory cells associated with the page depends upon what was previously loaded in the page latches 206. That is, a logic one in a page latch will leave the content (or logic level) of a corresponding memory cell in the flash memory untouched, whereas a logic zero in the page latch will write the corresponding memory cell in the flash memory (the logic level of the memory cell is set to zero). [0013] As discussed above, testing correct operation of a flash memory typically requires testing the functionality of both the word decoder and the page decoder. Testing the functionality of a word decoder is usually not an issue because it is generally sufficient to program only one page and then read back into the page, the values programmed. Testing the functionality of a page decoder, however, in some embodiments typically requires programming all pages (within a flash memory) with a unique signature that is subsequently read from each page of the flash memory. Unlike a conventional page decoder that requires N operations to program N pages of a flash memory, the page decoder 202 is operable to program a plurality of pages at a given time to reduce the amount of time required to program all the pages of a flash memory with a unique signature. Reducing the amount of time required to program pages of a flash memory reduces the overall time and cost required to test functionality of a flash memory. In one implementation, the number of operations required to program each of N pages of a flash memory (with a unique signature) is reduced to log₂N, as described in greater detail below.

[0014] FIG. 3 illustrates a method 300 for testing the functionality of a page decoder (e.g., page decoder 202) of a flash memory in accordance with one implementation. A flash memory (e.g., flash memory 200) is erased (step 302). In one implementation, erasing a flash memory comprises setting a logic level of each memory cell (of the flash memory) to one. After the flash memory is erased, a unique bit sequence (or signature) to be loaded into the flash memory is generated (e.g., by logic) (step 304). In one implementation, the number of bits in the unique bit sequence is equal to the number of bits in a given page of the flash memory. For example, if a page contains 32 bits, then the unique bit sequence contains 32 bits. A bit sequence having such a length permits an entire page to be programmed at once. The unique bit sequence is programmed into a plurality of pages of the flash memory at one time (step 306). hi one implementation, N/2 pages are programmed with the unique bit sequence, where N is the total number of pages within the flash memory.

[0015] A determination is made (e.g., by logic) whether each page of the flash memory contains a unique bit sequence (or unique signature) relative to other pages in the flash memory (step 308). If each page of the flash memory has not yet been programmed to have a unique signature, then the method 300 returns to step 304 to generate another unique bit sequence to be loaded into the flash memory, hi one implementation, during each iteration, N/2 pages of the flash memory are programmed. Thus, in this implementation, only log₂N iterations (or operations) are required to program each page of the flash memory with a unique signature. If, at step 306, a determination is made that each page of the flash memory has been programmed with a unique signature, then each unique signature is read from a corresponding page of the flash memory (step 3 10).

[0016] An example will now be provided. Table 1 below shows contents of a flash memory after the flash memory has been erased - i.e., each memory cell has a logic level of one. In the example, the flash memory has only 8 pages, and each page contains 5 bits.

Table 1

[0017] Table 2 below shows the contents of the flash memory after a first plurality of pages (e.g., N/2 pages) have been programmed with a unique signature. The unique signature programmed into the flash memory is [01111], and this signature is first loaded into the page latches prior to being written into the flash memory. The "H" means that the page lines corresponding to pages 1- 4 are set high. Therefore, because only the first bit in the page latches is set to zero while all the other bits are set at one, only the first bit in each of the accessed pages (i.e., pages 1-4) are written while the other bits are left untouched.

Table 2

[0018] In a second programming step, N/2 pages of the flash memory are access again at once. However, as shown in Table 3 below, the first two pages of the first half of the flash memory and the first two pages of the second half of the flash memory are accessed. And in this programming step, only the second bit in the page latches is set to zero. Table 3 shows the contents of the flash memory after the second programming step.

Table 3

[0019] In a third (and final) programming step, N/2 pages are again accessed at once, however, this time in an alternating fashion. In this programming step, only the third bit in the page latches is set to a logic level of zero. Table 4 shows the contents of the flash memory after the third programming step.

[0020] As shown in Table 4 above, the programming test sequence leaves a unique signature in each page with only 1Og₂N (or three) programming operations. These signatures can then be used to test the functionality of a page decoder through a read operation. As shown in the example above, page 1 is programmed with a given unique bit sequence during each programming step. In contrast, page 8 remains unchanged throughout all the programming steps. [0021] In general, to apply such a programming technique to a flash memory having N pages, one needs the highest 1Og₂N bits of the program counter. Each of these bits of the program counter can be combined with a test mode signal (also of size 1Og₂N) to access N/2 pages of the flash memory at a time. FIG. 4 illustrates one implementation of a page decoder 400 operable to program N/2 pages of a flash memory at a time. The page decoder 400 includes inverters (INVO-INV2), OR gates (ORO-OR2), and AND gates (ANDO- ANDl 1). To access N/2 pages at a given time as set forth in the example above, the following programming constraints can be implemented:

Programming step 1 : PC[2:0] = 3'0OO

TM[2:0] = 31)101

Programming step 2: PC[2:0] = 3'bOOO

TM[2:0] = 31)110

Programming step 3: PC[2:0] = 3'bOOO

TM[2:0] = 31)110

CONCLUSION

[0022] This specification describes method embodiments for testing correct operation of a page decoder in a memory comprised of N pages, in which each of the N pages has M memory cells. The method comprises, inter alia, erasing the memory to reset all memory cells associated with each of the N pages in the memory; iteratively generating a unique bit sequence of M bits and programming the unique bit sequence into a plurality of the N pages at a given time until each of the N pages contains a unique bit sequence relative to other pages in the memory; and responsive to each of the N pages having a unique bit sequence, using the page decoder to read out each unique bit sequence associated with the N pages to verify correct operation of the page decoder. [0023] Particular implementation embodiments may include one or more of the following features. Erasing the memory can include setting all memory cells associated with each of the N pages to a logic level of one. Programming the unique bit sequence into a plurality of the N pages can include setting one or more of the M memory cells of a given page to a logic level of zero. Programming the unique bit sequence into a plurality of the N pages at a given time can include programming the unique bit sequence into N/2 pages of the memory at a given time. In one aspect, only log₂N iterations are required until each of the N pages contains a unique bit sequence relative to other pages in the memory. At least one of the plurality of N pages can be programmed with a given unique bit sequence during each iteration. The memory can be a flash memory.

[0024] This specification also describes embodiments of a memory including N pages, in which each of the N pages has M memory cells. The memory further includes a page latch to iteratively load a unique bit sequence of M bits into a plurality of the N pages at a given time until each of the N pages contains a unique bit sequence relative to other pages in the memory, and a page decoder to read out each unique bit sequence associated with the N pages when each of the N pages has a unique bit sequence relative to other pages in the memory.

[0025] In some embodiments, a method and system for fully testing the functionality of a page decoder is provided that does not require use of observation points - e.g., a scan chain, hi some embodiments, the techniques described herein reduce the overall test time of a flash memory by reducing the number of programming operations required to place a unique signature into each page of the flash memory.

[0026] Various implementation embodiments of a page decoder for a flash memory have been described. Nevertheless, various modifications may be made to the implementations. For example, though example embodiments of page decoder described above are generally described with respect to flash memories, a page decoder in accordance with the present invention can be implemented within other types of memories, as shown in FIG. 5. [0027] FIG. 5 illustrates a memory 500 including a page decoder 502 and a word decoder 504. The page decoder 502 is operable to program a plurality of pages (or memory blocks) (not shown) within the memory at a given time to reduce the amount of time required to program all the pages (or memory blocks) with a unique signature. The memory can be, for example, a RAM (random access memory), a ROM (read-only memory), a hybrid memory, in addition to a multi-level cell device (that can store more than 1 bit per memory cell). In addition, steps of the method discussed above can be performed in a different order and still achieve desirable results. Accordingly, many modifications may be made without departing from the scope of the following claims.

Claims

CLAIMSWhat is claimed is:

1. A method for testing correct operation of a page decoder in a memory comprised of N pages, each of the N pages having M memory cells, the method comprising: erasing the memory to reset all memory cells associated with each of the N pages in the memory; iteratively generating a unique bit sequence of M bits and programming the unique bit sequence into a plurality of the N pages at a given time until each of the N pages contains a unique bit sequence relative to other pages in the memory; and responsive to each of the N pages having a unique bit sequence, using the page decoder to read out each unique bit sequence associated with the N pages to verify correct operation of the page decoder.

2. The method of claim 1, wherein: erasing the memory comprises setting all memory cells associated with each of the N pages to a logic level of one; and programming the unique bit sequence into a plurality of the N pages comprises setting one or more of the M memory cells of a given page to a logic level of zero.

3. The method of claim 1 , wherein programming the unique bit sequence into a plurality of the N pages at a given time comprises programming the unique bit sequence into N/2 pages of the memory at a given time.

4. The method of claim 3, wherein only log₂N iterations are required until each of the N pages contains a unique bit sequence relative to other pages in the memory.

5. The method of claim 4, wherein at least one of the plurality of N pages is programmed with a given unique bit sequence during each iteration.

6. The method of claim 5, wherein the memory is a flash memory.

7. A memory comprised of N pages, each of the N pages having M memory cells, the memory comprising: means for erasing the memory to reset all memory cells associated with each of the N pages in the memory; means for iteratively generating a unique bit sequence of M bits and programming the unique bit sequence into a plurality of the N pages at a given time until each of the N pages contains a unique bit sequence relative to other pages in the memory; and responsive to each of the N pages having a unique bit sequence, means for reading out each unique bit sequence associated with the N pages to verify correct operation of the memory.

8. The memory of claim 7, wherein: the means for erasing the memory comprises means for setting all memory cells associated with each of the N pages to a logic level of one; and the means for iteratively generating a unique bit sequence of M bits and programming the unique bit sequence into a plurality of the N pages comprises means for setting one or more of the M memory cells of a given page to a logic level of zero.

9. The memory of claim 7, wherein the means for iteratively generating a unique bit sequence of M bits and programming the unique bit sequence into a plurality of the N pages comprises means for programming the unique bit sequence into N/2 pages of the memory at a given time.

10. The memory of claim 9, wherein the means for iteratively generating a unique bit sequence of M bits and programming the unique bit sequence into a plurality of the N pages requires only 1Og₂N iterations until each of the N pages contains a unique bit sequence relative to other pages in the memory.

11. The memory of claim 10, wherein at least one of the plurality of Npages is programmed with a given unique bit sequence during each iteration.

12. The memory of claim 11, wherein the memory is a flash memory.

13. A memory comprising:

Npages, each of the Npages having M memory cells; a page latch to iteratively load a unique bit sequence of M bits into a plurality of the Npages at a given time until each of the Npages contains a unique bit sequence relative to other pages in the memory; and a page decoder to read out each unique bit sequence associated with the Npages when each of the Npages has a unique bit sequence relative to other pages in the memory.

14. The memory of claim 13, wherein the page latch is operable to iteratively load a given unique bit sequence into N/2 pages of the memory at a given time.

15. The memory of claim 14, wherein only 1Og₂N iterations are required until each of the Npages contains a unique bit sequence relative to other pages in the memory.

16. The memory of claim 15, wherein the memory is a flash memory.