WO2008105293A1 - 微細パターン形成用樹脂組成物及び微細パターン形成方法 - Google Patents

微細パターン形成用樹脂組成物及び微細パターン形成方法 Download PDF

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Publication number
WO2008105293A1
WO2008105293A1 PCT/JP2008/052853 JP2008052853W WO2008105293A1 WO 2008105293 A1 WO2008105293 A1 WO 2008105293A1 JP 2008052853 W JP2008052853 W JP 2008052853W WO 2008105293 A1 WO2008105293 A1 WO 2008105293A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
resin composition
micropattern formation
micropattern
attains
Prior art date
Application number
PCT/JP2008/052853
Other languages
English (en)
French (fr)
Inventor
Tomoki Nagai
Atsushi Nakamura
Takayoshi Abe
Makoto Sugiura
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to EP08711659A priority Critical patent/EP2133747A4/en
Priority to US12/525,816 priority patent/US20100009292A1/en
Priority to JP2009501198A priority patent/JP5233985B2/ja
Publication of WO2008105293A1 publication Critical patent/WO2008105293A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

　基板の表面状態の如何にかかわらず、レジストパターンのパターン間隙を実効的に、精度よく微細化することができ、波長限界を超えるパターンを良好かつ経済的に低コストでパターン欠陥の少ない状態で形成することができることに加え、パターン収縮率をより向上させることが可能な樹脂組成物、及びこれを用いて効率よく微細レジストパターンを形成できる微細パターン形成方法を提供する。 　水酸基を含有する樹脂と、架橋成分と、アルコール及び全溶媒に対して１０質量％以下の水を含むアルコール系溶媒と、を含有する微細パターン形成用樹脂組成物であって、前記架橋成分として、その分子内にアクリロイルオキシ基を２個以上有する化合物を含有する微細パターン形成用樹脂組成物である。
PCT/JP2008/052853 2007-02-26 2008-02-20 微細パターン形成用樹脂組成物及び微細パターン形成方法 WO2008105293A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08711659A EP2133747A4 (en) 2007-02-26 2008-02-20 RESIN COMPOSITION FOR MICRO-MOTIF FORMATION AND METHOD FOR FORMING MICRO-MOTIFS
US12/525,816 US20100009292A1 (en) 2007-02-26 2008-02-20 Resin composition for micropattern formation and method of micropattern formation
JP2009501198A JP5233985B2 (ja) 2007-02-26 2008-02-20 微細パターン形成用樹脂組成物及び微細パターン形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-046245 2007-02-26
JP2007046245 2007-02-26

Publications (1)

Publication Number Publication Date
WO2008105293A1 true WO2008105293A1 (ja) 2008-09-04

Family

ID=39721128

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052853 WO2008105293A1 (ja) 2007-02-26 2008-02-20 微細パターン形成用樹脂組成物及び微細パターン形成方法

Country Status (6)

Country Link
US (1) US20100009292A1 (ja)
EP (1) EP2133747A4 (ja)
JP (1) JP5233985B2 (ja)
KR (1) KR20100014830A (ja)
TW (1) TW200844688A (ja)
WO (1) WO2008105293A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100017727A (ko) * 2007-05-23 2010-02-16 제이에스알 가부시끼가이샤 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
JP2011059583A (ja) * 2009-09-14 2011-03-24 Jsr Corp 微細パターン形成用樹脂組成物および微細パターン形成方法、ならびに重合体
KR20230134130A (ko) 2021-02-17 2023-09-20 후지필름 가부시키가이샤 영구막의 제조 방법, 적층체의 제조 방법, 및, 반도체디바이스의 제조 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307228A (ja) 1988-06-06 1989-12-12 Hitachi Ltd パターン形成法
JPH04364021A (ja) 1991-06-11 1992-12-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JPH06250379A (ja) 1993-02-26 1994-09-09 Oki Electric Ind Co Ltd パターン形成方法、位相シフト法用ホトマスクの形成方法
JPH0745510A (ja) 1993-08-03 1995-02-14 Hitachi Ltd パタン形成方法
JP2723260B2 (ja) 1988-08-30 1998-03-09 株式会社東芝 微細パターン形成方法
JPH1073927A (ja) 1996-07-05 1998-03-17 Mitsubishi Electric Corp 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
JP2000199951A (ja) * 1998-12-31 2000-07-18 Hyundai Electronics Ind Co Ltd フォトレジスト架橋剤、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパタ―ンの形成方法、及び、半導体素子。
JP2001019860A (ja) 1999-06-29 2001-01-23 Clariant Internatl Ltd 水溶性樹脂組成物
JP2003195527A (ja) 2001-12-27 2003-07-09 Tokyo Ohka Kogyo Co Ltd パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP2004037570A (ja) * 2002-06-28 2004-02-05 Tokyo Ohka Kogyo Co Ltd パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP2005227395A (ja) * 2004-02-10 2005-08-25 Sekisui Chem Co Ltd カラムスペーサ用光熱硬化性樹脂組成物及びカラムスペーサの製造方法
WO2005116776A1 (ja) 2004-05-26 2005-12-08 Jsr Corporation 微細パターン形成用樹脂組成物および微細パターン形成方法

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JPS6057337A (ja) * 1983-09-07 1985-04-03 Mitsubishi Rayon Co Ltd 光重合性樹脂組成物
US4988607A (en) * 1989-05-30 1991-01-29 Minnesota Mining And Manufacturing Company High speed photopolymerizable element with initiator in a topcoat
JP3220498B2 (ja) * 1992-03-06 2001-10-22 岡本化学工業株式会社 光重合性組成物
TW329539B (en) * 1996-07-05 1998-04-11 Mitsubishi Electric Corp The semiconductor device and its manufacturing method
TW372337B (en) * 1997-03-31 1999-10-21 Mitsubishi Electric Corp Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
US7208260B2 (en) * 1998-12-31 2007-04-24 Hynix Semiconductor Inc. Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
JP4278319B2 (ja) * 2001-09-26 2009-06-10 富士フイルム株式会社 平版印刷版原版及び平版印刷版の製版方法
US6936384B2 (en) * 2002-08-01 2005-08-30 Kodak Polychrome Graphics Llc Infrared-sensitive composition containing a metallocene derivative
US7090957B2 (en) * 2002-09-11 2006-08-15 Fuji Photo Film Co., Ltd. Polymerizable composition and planographic printing plate precursor using the same
JP4597590B2 (ja) * 2003-11-21 2010-12-15 富士フイルム株式会社 イメージセンサ用カラーフィルタの製造方法
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Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307228A (ja) 1988-06-06 1989-12-12 Hitachi Ltd パターン形成法
JP2723260B2 (ja) 1988-08-30 1998-03-09 株式会社東芝 微細パターン形成方法
JPH04364021A (ja) 1991-06-11 1992-12-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JPH06250379A (ja) 1993-02-26 1994-09-09 Oki Electric Ind Co Ltd パターン形成方法、位相シフト法用ホトマスクの形成方法
JPH0745510A (ja) 1993-08-03 1995-02-14 Hitachi Ltd パタン形成方法
JPH1073927A (ja) 1996-07-05 1998-03-17 Mitsubishi Electric Corp 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
JP2000199951A (ja) * 1998-12-31 2000-07-18 Hyundai Electronics Ind Co Ltd フォトレジスト架橋剤、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパタ―ンの形成方法、及び、半導体素子。
JP2001019860A (ja) 1999-06-29 2001-01-23 Clariant Internatl Ltd 水溶性樹脂組成物
JP2003195527A (ja) 2001-12-27 2003-07-09 Tokyo Ohka Kogyo Co Ltd パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP2004037570A (ja) * 2002-06-28 2004-02-05 Tokyo Ohka Kogyo Co Ltd パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP2005227395A (ja) * 2004-02-10 2005-08-25 Sekisui Chem Co Ltd カラムスペーサ用光熱硬化性樹脂組成物及びカラムスペーサの製造方法
WO2005116776A1 (ja) 2004-05-26 2005-12-08 Jsr Corporation 微細パターン形成用樹脂組成物および微細パターン形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2133747A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100017727A (ko) * 2007-05-23 2010-02-16 제이에스알 가부시끼가이샤 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
KR101597366B1 (ko) * 2007-05-23 2016-02-24 제이에스알 가부시끼가이샤 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
JP2011059583A (ja) * 2009-09-14 2011-03-24 Jsr Corp 微細パターン形成用樹脂組成物および微細パターン形成方法、ならびに重合体
KR20230134130A (ko) 2021-02-17 2023-09-20 후지필름 가부시키가이샤 영구막의 제조 방법, 적층체의 제조 방법, 및, 반도체디바이스의 제조 방법

Also Published As

Publication number Publication date
JPWO2008105293A1 (ja) 2010-06-03
EP2133747A1 (en) 2009-12-16
TW200844688A (en) 2008-11-16
EP2133747A4 (en) 2011-01-12
JP5233985B2 (ja) 2013-07-10
KR20100014830A (ko) 2010-02-11
US20100009292A1 (en) 2010-01-14

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