WO2008062767A1 - Puce semi-conductrice comportant une électrode de surface latérale, procédé de fabrication de la puce semi-conductrice, et module de montage tridimensionnel dans lequel est stratifiée la puce - Google Patents

Puce semi-conductrice comportant une électrode de surface latérale, procédé de fabrication de la puce semi-conductrice, et module de montage tridimensionnel dans lequel est stratifiée la puce Download PDF

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Publication number
WO2008062767A1
WO2008062767A1 PCT/JP2007/072412 JP2007072412W WO2008062767A1 WO 2008062767 A1 WO2008062767 A1 WO 2008062767A1 JP 2007072412 W JP2007072412 W JP 2007072412W WO 2008062767 A1 WO2008062767 A1 WO 2008062767A1
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Prior art keywords
semiconductor chip
electrode
side
cutting
manufacturing
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PCT/JP2007/072412
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English (en)
Japanese (ja)
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Toru Maeda
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Shinkawa Ltd.
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0237Disposition of the redistribution layers
    • H01L2224/02371Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
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    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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Abstract

Selon l'invention, une électrode de surface latérale d'une puce semi-conductrice comportant l'électrode de surface latérale est réalisée tout en préservant les qualités de la puce semi-conductrice par une inspection de sondage à l'état de plaquette. Une électrode remplie de métal (27) est disposée sur des zones de circuit adjacentes (14) et est connectée électriquement aux zones de circuit adjacentes (14), une plaquette semi-conductrice est découpée le long d'une ligne de découpe (21) entre les zones de circuit adjacentes (14) après constitution de l'électrode remplie de métal (27) pour réaliser une électrode de surface latérale (31) sur la puce semi-conductrice. Après la découpe, chaque puce semi-conductrice (11) est inspectée par sondage et la puce semi-conductrice comportant l'électrode de surface latérale est fabriquée.
PCT/JP2007/072412 2006-11-22 2007-11-19 Puce semi-conductrice comportant une électrode de surface latérale, procédé de fabrication de la puce semi-conductrice, et module de montage tridimensionnel dans lequel est stratifiée la puce WO2008062767A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006316159A JP2008130932A (ja) 2006-11-22 2006-11-22 側面電極付半導体チップ及びその製造方法並びにその半導体チップを積層した3次元実装モジュール
JP2006-316159 2006-11-22

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WO2008062767A1 true true WO2008062767A1 (fr) 2008-05-29

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PCT/JP2007/072412 WO2008062767A1 (fr) 2006-11-22 2007-11-19 Puce semi-conductrice comportant une électrode de surface latérale, procédé de fabrication de la puce semi-conductrice, et module de montage tridimensionnel dans lequel est stratifiée la puce

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WO (1) WO2008062767A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013137049A1 (fr) * 2012-03-16 2013-09-19 ソニー株式会社 Dispositif à semi-conducteurs, procédé de fabrication de dispositif à semi-conducteurs, tranche à semi-conducteurs et appareil électronique
JP2014197654A (ja) * 2013-03-07 2014-10-16 株式会社東芝 半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101013549B1 (ko) 2008-06-30 2011-02-14 주식회사 하이닉스반도체 적층 반도체 패키지 및 이의 제조 방법
WO2011111300A1 (fr) 2010-03-09 2011-09-15 パナソニック株式会社 Boîtier pour semi-conducteur ayant une électrode sur une surface latérale, et dispositif semi-conducteur

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100882A (ja) * 1998-09-18 2000-04-07 Hitachi Ltd 半導体装置の製造方法とその検査方法、及び、それらの方法に用いる冶具
JP2001210782A (ja) * 2000-01-27 2001-08-03 Seiko Epson Corp 半導体チップ、マルチチップパッケージ、および半導体装置と、並びに、それを用いた電子機器
JP2002270721A (ja) * 2001-03-12 2002-09-20 Fujitsu Ltd 半導体装置及びその製造方法
JP2004221372A (ja) * 2003-01-16 2004-08-05 Seiko Epson Corp 半導体装置、半導体モジュール、電子機器、半導体装置の製造方法および半導体モジュールの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100882A (ja) * 1998-09-18 2000-04-07 Hitachi Ltd 半導体装置の製造方法とその検査方法、及び、それらの方法に用いる冶具
JP2001210782A (ja) * 2000-01-27 2001-08-03 Seiko Epson Corp 半導体チップ、マルチチップパッケージ、および半導体装置と、並びに、それを用いた電子機器
JP2002270721A (ja) * 2001-03-12 2002-09-20 Fujitsu Ltd 半導体装置及びその製造方法
JP2004221372A (ja) * 2003-01-16 2004-08-05 Seiko Epson Corp 半導体装置、半導体モジュール、電子機器、半導体装置の製造方法および半導体モジュールの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013137049A1 (fr) * 2012-03-16 2013-09-19 ソニー株式会社 Dispositif à semi-conducteurs, procédé de fabrication de dispositif à semi-conducteurs, tranche à semi-conducteurs et appareil électronique
US9263488B2 (en) 2012-03-16 2016-02-16 Sony Corporation Semiconductor device, manufacturing method of semiconductor device, semiconductor wafer, and electronic equipment
JP2014197654A (ja) * 2013-03-07 2014-10-16 株式会社東芝 半導体装置

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