WO2008044370A1 - Liquid crystal display - Google Patents

Liquid crystal display

Info

Publication number
WO2008044370A1
WO2008044370A1 PCT/JP2007/062307 JP2007062307W WO2008044370A1 WO 2008044370 A1 WO2008044370 A1 WO 2008044370A1 JP 2007062307 W JP2007062307 W JP 2007062307W WO 2008044370 A1 WO2008044370 A1 WO 2008044370A1
Authority
WO
Grant status
Application
Patent type
Prior art keywords
display
crystal
liquid
light
photodiode
Prior art date
Application number
PCT/JP2007/062307
Other languages
French (fr)
Japanese (ja)
Inventor
Hiromi Katoh
Christopher Brown
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of optical devices, e.g. polarisers, reflectors or illuminating devices, with the cell
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F2001/13312Circuits comprising a photodetector not for feedback

Abstract

Disclosed is a liquid crystal display wherein a photodiode is prevented from responding to the illumination light, while suppressing occurrence of dark current in the photodiode. Specifically disclosed is a liquid crystal display comprising a liquid crystal display panel (4) and a backlight. The liquid crystal display panel (4) comprises an active matrix substrate (1), a liquid crystal layer (2) and a counter substrate (3). A plurality of pixels respectively have three sub-pixels (5a-5c), and a color filter provided on the counter substrate (3) has colored layers (6a-6c) respectively corresponding to the sub-pixels. In this liquid crystal display, the backlight is so arranged as to illuminate the liquid display panel (4) from the counter substrate side. The active matrix substrate (1) comprises a photodiode (20) within a display region. The photodiode (20) has such a characteristic that the sensitivity increases as the wavelength of an incident light is shorter, and is so arranged that its light sensing region overlaps a red colored layer (6c) in the thickness direction of the liquid crystal display.

Description

Specification

The liquid crystal display device

Technical field

[0001] The present invention relates to a liquid crystal display device which includes a photodiode that reacts to light incident from the observer side of the display screen.

BACKGROUND

In recent years, liquid crystal display device, the power-saving, thin, from features such as light weight, a computer, a cellular phone, PDA, has been widely adopted as display devices for gaming machines. In general, liquid crystal display equipment includes a liquid crystal display panel, and Roh backlight for illuminating it from the back. The liquid crystal display panel is configured by sandwiching a liquid crystal layer between the active matrix substrate and the counter substrate.

[0003] The active matrix substrate, a plurality of pixels on a glass substrate formed in a matrix is ​​configured. Further, when the color display is performed, usually, one pixel is constituted by three sub-pixels. Each sub-pixel, and a TFT and the pixel electrode. Furthermore, the counter substrate includes a counter electrode and a color filter on a glass substrate. Karafi filter, for each sub-pixel has a colored layer of red (R), green (G) or blue (B).

[0004] In this liquid crystal display device, the voltage applied between each pixel electrode and the counter electrode is adjusted, the transmittance of the liquid crystal layer is adjusted for each sub-pixel. As a result, by the illumination light of the backlight transmitted through the liquid crystal layer and the coloring layer, the image is displayed on the display screen.

[0005] Thus, the liquid crystal display device of a conventional, a function of displaying an image, Ru, but has been proposed a liquid crystal display device having even a recent years, image capture function (e.g., patent in the disclosed liquid crystal display device in reference 1.) o Patent Document 1, the active matrix substrate, a plurality of photodiodes are formed in a matrix, liquid crystal display panel functions as an area sensor.

[0006] Moreover, Te contact, in Patent Document 1, as each of the photodiodes, photodiode of lateral structure have been used. Each photodiode utilizes processes TFT, the common silicon film and TFT, p-type semiconductor region, the light detection region (intrinsic region), and is formed by providing an n-type semiconductor region in order. However, the photo diode is its structure, also react with illumination light from Nag Roh backlight only light incident observer side force

[0007] Therefore, in Patent Document 1, unlike the general liquid crystal display device, Roh backlight is disposed on the counter substrate side, and, for shielding illumination light, which is connected to the n layer of the photodiode wire covers the upper surface of the i layer. In this configuration, the wiring covering the upper surface of the i layer is a light shielding film can suppress the photodiode reacts to the illumination light.

[0008] Moreover, only this configuration, it is between gap between the wiring connected to the wiring and p layers covering the upper surface of the i layer (Fig. 6 See Patent Document 1.), A photodiode through the gap there is a possibility that the illuminating light is morphism enter into. Therefore, in Patent Document 1, for shielding even illumination light to be it'll pass through this gap, in a layer between the wiring and the photodiode, that have second light-shielding film is formed. The second light shielding film is formed by utilizing the step of forming the gate electrode of the TFT. Patent Document 1: JP 2006- 3857 JP (page 7, Figure 5, Figure 6)

Disclosure of the Invention

Problems that the Invention is to you'll solve

[0009] Incidentally, Te Contact ヽ in Patent Document 1, the second light shielding film is formed of a conductive metallic material. Furthermore, between the silicon film and the second light shielding film which constitutes the photodiode is only a thin insulation layer is present. Therefore, a depletion layer is summer hardly occurs in the optical detection area. As a result, in the liquid crystal display device of Patent Document 1, the dark current in photodiode is ヽ and ヽ U problem low! ヽ captured image obtained only for calling without Ekigu quality.

[0010] An object of the present invention is to solve the above problems, while suppressed won the generation of dark current in the photodiode is to provide a liquid crystal display device in which a photodiode can prevent the reaction with illumination light .

Means for Solving the Problems

[0011] The liquid crystal display device of the present invention in order to achieve the above object, a liquid crystal display panel, and a Bruno backlight, the liquid crystal display panel includes an active matrix substrate on which a plurality of pixels arranged in a matrix, e Bei a liquid crystal layer and a counter substrate provided with a color filter, the plurality of pixels, each having three sub-pixels, the color filter of the previous SL for each sub-pixel, a red, green or blue colored a liquid crystal display device provided with a layer, wherein the backlight, the liquid crystal display panel, is arranged to illuminate from the said counter substrate side, the active matrix substrate further plurality of photo in a display area comprises a diode, the photodiode has a characteristic that the wavelength of the incident light sensitivity shorter increases, and the light detection region of the photodiode Contact thickness Direction of the liquid crystal display device, Te so as to overlap the colored layers of red, is arranged, characterized Rukoto. Effect of the invention

In the liquid crystal display device of the present invention as [0012] above, red colored layer is interposed between the photodiode and the backlight. Therefore, the photodiode only red light among the light components included in the illumination light is used with a force present invention that will intends Kochikara to photodiode, short wavelength such as red light, sensitivity to light is low, and, it has a jar characteristics, Ru.

[0013] Thus, according to the liquid crystal display device of the present invention, it is possible to suppress the photodiode to by connexion react to the illumination light. Moreover, Gana need to provide a light shielding film of a conductive metal material, therefore, occurrence of dark current can be suppressed in the photodiode.

BRIEF DESCRIPTION OF THE DRAWINGS

[0014] [FIG 1] FIG 1 is a plan view partially showing a structure of a liquid crystal display device in an embodiment of the present invention.

FIG. 2 is a sectional view showing a cross section obtained by cutting along cutting lines A- AI this in FIG.

FIG. 3 is a graph showing the spectral sensitivity of the photodiode shown in FIGS. BEST MODE FOR CARRYING OUT THE INVENTION

[0015] The liquid crystal display device of the present invention, a liquid crystal display panel, and a backlight, the liquid crystal display panel, an active matrix substrate on which a plurality of pixels arranged in a matrix, and a liquid crystal layer, a color filter and a counter substrate provided with the plurality of pixels, respectively is provided with three sub-pixels, wherein the color filter, for each of the sub-pixel, a liquid crystal display having red, green or blue colored layer an apparatus, wherein the backlight, the liquid crystal display panel, arranged to illuminate the said counter substrate side force, the active Ma Toritasu substrate further comprises a plurality of photodiodes within a display region, wherein Fotodaio over de has a characteristic that the wavelength of the incident light is shorter sensitivity increases, and the light detection region of the photodiode is the thickness direction of the liquid crystal display device In so as to overlap the colored layers of red, characterized in that it is arranged.

[0016] The liquid crystal display device in the present invention, the photodiode, the formed by Akuti blanking matrix substrate silicon film provided on a base substrate, the silicon film, polycrystalline silicon or continuous grain formed by field-crystal silicon, and the silicon film along the surface direction of the sequentially disposed, a semiconductor region of a first conductivity type, an intrinsic semiconductor material region, and the second conductivity type of said first conductivity type opposite comprising a semiconductor region, the intrinsic semiconductor material region may be a mode to be the light detection region.

In [0017] the above aspect, the silicon layer is coated with an insulating film of the plurality of layers, on the insulating film of the plurality of layers, a first electrically connected to the semiconductor region of the first conductivity type a wiring, the second wiring is provided that is electrically connected to the second conductivity type semiconductor region, either one of the first wiring and the second wiring, the liquid crystal display equipment of the thickness direction you, Te, said is formed so as to overlap with the intrinsic semiconductor region!, Runogayoshimi Masui. In this case, as possible out possible to further suppress the incidence of the illumination light to the photodiode.

[0018] (Embodiment)

Hereinafter, a liquid crystal display device according to the embodiment of the present invention will be described with reference to FIGS. Figure 1 is a plan view showing a configuration partially in the liquid crystal display device in an embodiment of the present invention. Figure 2 is a sectional view showing a cross section obtained by cutting along cutting lines Α-ΑΊ this in FIG.

[0019] Further, FIG. 1, which primarily shows the structure of a pixel formed on an active matrix substrate, for a counter substrate shows only the outer shape of the color filters by a chain line. Moreover, a plan view in FIG. 1 shows a state in which an active matrix substrate was guessed also seen a side force which is not a pixel is formed. Also, the description of the interlayer insulating film in FIG. 1 are omitted, hatching into the interlayer insulating film 2 is omitted.

[0020] The liquid crystal display device of this embodiment includes a liquid crystal display panel 4 shown in FIG. 2, a backlight (not shown) to illuminate it. As shown in FIGS. 1 and 2, the liquid crystal Display panel 4, the active matrix substrate 1, a liquid crystal layer 2, and a counter substrate 3, is formed by sandwiching a liquid crystal layer 2 between two substrates, that.

[0021] Further, as shown in FIG. 2, the illumination of the liquid crystal display panel 4 by the backlight is performed from the counter substrate 3 side, the illumination light 30, the counter substrate 3, the liquid crystal layer 2, the order of the active matrix substrate 1 It passes. Although not illustrated, the liquid crystal display device of this embodiment, in addition to various optical films of that also comprise, Ru.

[0022] Further, as shown in FIG. 1, the active matrix substrate 1 includes a pixel. 1 and 2 show, although not shown, the pixel is a plurality arranged in a matrix. In Akuti blanking matrix substrate 1, a region in which a plurality of pixels are arranged is the display region. Also, one pixel is constituted by three sub-pixels.

[0023] FIG. 1 is shown only three of the sub-pixel 5a~5c! /, Ru. As shown in FIG. 1, each subpixel bodies 5a to 5c, it comprises an active element 7 and a transparent electrode 8. Active element 7 is a thin film transistor: a (TFT Thin Film Transistor). The transparent electrode 8 is a pixel electrode made form of ITO or the like.

[0024] Further, as shown in FIG. 2, the active element 7 includes a silicon film 11 in which the source region 15 and drain region 16 are formed, and a gate electrode 9. Silicon film 11, since it is excellent in terms of moving speed of the charge, and is formed by a continuous grain silicon (CGS). Source region 15 and drain region 16 are both n-type semiconductor region. Further, a region overlapping with the gate electrode 9 of the divorced film 11 serves as a channel region 17.

[0025] Further, as shown in FIG. 1, the gate electrode 9 is gate line 10 and the integrally formed which are arranged along the horizontal direction of the screen. The source electrode 12 is connected to the source region 15, the drain electrode 14 is connected to the drain region 16. The source electrode 12 is integrally formed with the source wiring 13 arranged along the vertical direction of the screen. Drain electrodes 14 are connected to the transparent electrode 8.

[0026] Further, as shown in FIGS. 1 and 2, the active matrix substrate 1 includes a photodiode 20 within the display area. 1 and 2 show, although only a single photodiode 20 shown, in fact, the active matrix substrate 1, for each one pixel, the photodiode 20 is disposed. A plurality of photodiodes 20 arranged in each pixel functions as a collar Asensa.

[0027] As shown in FIG. 2, in this embodiment, photodiode 20 is a PIN diode having a lateral structure. Photodiode 20 includes a silicon film provided on a glass substrate 26 serving as the active matrix substrate 1 Total over scan substrate.

Silicon film constituting the [0028] photodiode 20 may utilize the formation of the active element 7 processes, and are formed simultaneously. Therefore, the photodiode 20 is also formed by the charge superior continuous grain silicon to the moving speed of the (CGS). Further, the silicon film, in order along the surface direction, p-type semiconductor region (p layer) 21, an intrinsic semiconductor region (Qian) 22 and n-type semiconductor region (n layer) 23 is provided.

[0029] In the photodiode 20, i layer 22 serves as a light detection region. Te present embodiment smell, i layer 22 may be a region close to the electrically neutral than the p layer 21 and n layer 23 is adjacent. i layer 22 is quite areas and free of impurities, conduction electron density and the hole density are equal V, it is preferably in the range of area.

In [0030] FIG. 2, 27 is an insulating film formed on the glass substrate 26, the photodiode 20 is formed on this. Further, the photodiode 20 is covered with the interlayer insulating film 28 and 29. 24 shows the wiring which is electrically connected to the p layer 21, 25 shows a wiring electrically connected to the n layer 2 3! /, Ru.

[0031] Further, among the two wires 24 and 25, connected to the wiring 24 to the p layer 21 is formed so as to overlap the i layer 22 in the thickness direction of the liquid crystal display device. Specifically, the wiring 24 has a light shielding portion 24a in a position overlapping the i layer 22. Accordingly, morphism entry into the i-layer 23 of the illumination light 30 is suppressed.

[0032] Further, as shown in FIGS. 1 and 2, the counter substrate 3 includes a Karafi filter having a plurality of colored layers. Colored layer is provided for each subpixel. In Figure 1, among a number wearing color layer, only the colored layer 6a~6c corresponding to each sub-pixel 5a~5c are shown.

The [0033] Specifically, the colored layer 6a~6c is on the surface of the glass substrate 31 as a base substrate of the counter substrate 3 in the thickness direction of the liquid crystal display device, so as to overlap the transparent electrodes 8 of the corresponding sub-pixel It is formed in to. Further, between the adjacent colored layer, black matrix task 32 is provided for light shielding. Also, so as to cover all the colored layer, the counter electrode 33 of transparent are formed.

[0034] Thus, the liquid crystal display device of this embodiment, in accordance with the sensitivity characteristic of the force photodiode 20 has the same configuration as the conventional liquid crystal display device, the arrangement of the photodiode 20 is carried out and a point that is different from the conventional liquid crystal display device. It will be described with reference to FIG. 3 about this point. Figure 3 is a graph showing the spectral sensitivity of the photodiode shown in FIGS.

[0035] As described above, the silicon film constituting the photodiode 20, continuous grain silicon

It is formed by (CGS). Therefore, as shown in FIG. 3, a photodiode 20 which is a continuous grain silicon Accordingly formation, the wavelength of the incident light is short !, more sensitivity has a characteristic of increasing. That is, the photodiode 20 is shorter in blue light the length of the reaction easily force wavelengths wavelengths, difficulty respond to red light, it has characteristics, Ru.

[0036] On the other hand, as shown in FIGS. 1 and 2, the photodiode 20 is Oite the thickness direction of the semiconductor device, are arranged so as to overlap the colored layers 6c red (R). Therefore, only the red light among the light components included in the illumination light so that Kochikara to the photodiode 20. Incidentally, the colored layer 6a colored layer of green (G), colored layer 6b is colored layers blue (B).

[0037] Therefore, in the liquid crystal display device of this embodiment, the gap 18 toward the force connexion illumination light 30 in the i layer 22 (see FIG. 1 and FIG. 2) between the light-shielding portion 24a and the wiring 25 of the wiring 24 There also enters, in a state where the photodiode 20 is hardly reacts. Accordingly, by the present embodiment lever, in order to shield the illumination light incident through the gap 18, necessary to provide a separate new light-shielding film and the light-shielding portion 24a is the generation of the dark current as compared with the conventional Mugu It can be suppressed.

[0038] Thus, according to the liquid crystal display device of this embodiment, the generation of dark current definitive the photodiode 20, both the reaction by the illumination light 30 of the photodiode 20 can be suppressed. In the example of FIGS. 1 and 2, the light shielding portion 2 4a for shielding the i layer 22 from the illumination light 30, the force present embodiment are provided on the wiring 24 connected to the p layer 21 is this the present invention is not limited to. Shielding portion may be provided on the wiring 25 connected to the n layer.

[0039] However, depending on whether wire shielding portion is provided it is one, the dark current may be generated in the photodiode 20, which may or single Sina force. In addition, the generation of the dark current is also implicated magnitude of the reverse Noiasu voltage applied to the n layer 21 of full Oto diode 20. Therefore, formation of the light shielding portion of the wiring 24 or the wiring 25, in accordance with the magnitude of the reverse bias voltage may be performed as 喑電 flow is minimized.

[0040] The liquid crystal display device in this embodiment, is provided the light shielding portions 24a, Do may be state-like. Even in this embodiment, photodiode 20 is from most reactive to such Ikoto the red light, the reaction with illumination light 30 of the photodiode 20 is sufficiently suppressed.

[0041] The formation of the silicon film of continuous grain silicon, for example, can row Ukoto by the following steps. First, sequentially deposited and Sani匕 silicon film and Amorufa scan silicon film on the interlayer insulating film 27 shown in FIG. Next, the surface layer of the amorphous silicon film to form a nickel thin film as a catalyst for the crystallization accelerating. Next, Aniru by reacting a nickel thin film and § mode Rufasu silicon film, forming a crystalline silicon layer on these interfaces. Thereafter, by etching or the like to remove the layer of the nickel film and 珪I匕 nickel unreacted. Then, when the progress of crystallization performed Aniru the remaining silicon film, a silicon film formed by a continuous grain silicon is obtained. Then, the implementation of formation of photoresist and Etsuchin grayed, the shape of the silicon film with a predetermined shape, further, the photodiode 20 is completed by performing various ion implantation.

[0042] In addition, our in the present invention, Te, photodiode 20 is not limited to those formed by the silicon film of continuous grain silicon. Photodiode 20 is not limited as long as having the properties as sensitivity wavelength is short of the incident light increases. Therefore, Fotodaio over de 20 may be, for example, one formed by a polycrystalline silicon. Polycrystalline silicon is also because has the same properties and characteristics of continuous grain silicon shown in FIG.

[0043] of the silicon film by the polycrystalline silicon formation, for example, it can be carried out as follows.

First, a silicon film of amorphous silicon. Then, the relative silicon film of amorphous silicon, performed equal to dehydrogenation heated for 2 hours at for example 500 ° C, further, to implement Aniru, it is crystallized. As a result, the silicon film of polycrystalline silicon is obtained. The method of Aniru known Rezaaniru methods, for example, a method of irradiating the like of the laser beam by E excimer lasers in the amorphous silicon film. Industrial Applicability

As described above, according to the present invention, the display screen of the observer liquid crystal display device equipped with a full ot diode that reacts to light incident from the side Nio Te, and occurrence of dark current from the photodiode, photo a reaction by incidence of the illumination light diodes can be simultaneously suppressed. Therefore, the liquid crystal display device of the present invention may have industrial applicability.

Claims

The scope of the claims
[1] includes a liquid crystal display panel and a backlight,
The liquid crystal display panel is provided with active matrix scan substrate on which a plurality of pixels arranged in a matrix, and a liquid crystal layer and a counter substrate provided with a color filter,
Wherein the plurality of pixels, each having three sub-pixels,
The color filter for each of the sub-pixels, red, a liquid crystal display device provided with a green or blue colored layer,
The backlight the liquid crystal display panel, is arranged by Uni illuminating from the said counter substrate side,
The active matrix substrate further Bei example a plurality of photodiodes in the display area,
The photodiode has a characteristic that the wavelength of the incident light is shorter sensitivity is increased, one 且, so as to overlap the colored layers of red light detection region of the photodiode in the thickness direction of the liquid crystal display device , it is located! The liquid crystal display device, characterized in that Ru.
[2] the photodiode is formed by the silicon film provided on the base substrate of the active matrix substrate,
The silicon layer is formed by polycrystalline silicon or continuous grain silicon, and the silicon film along the surface direction of the sequentially disposed, a semiconductor region of a first conductivity type, an intrinsic semiconductor region, and the first comprising a semiconductor region of a second conductivity-type conductivity and the opposite, the intrinsic semiconductor region, the liquid crystal display device according to claim 1 serving as the light detection region.
[3] The silicon film is coated with an insulating film of the plurality of layers,
On the insulating film of the plurality of layers, the first wiring that will be electrically connected to the first conductivity type semiconductor region, a second wiring electrically connected to the semiconductor region of the second conductivity type door is provided,
The first wiring and either one of the second wiring, the thickness direction Nio of the liquid crystal display device Te, the intrinsic formed so as to overlap the semiconductor region, Ru crystal according to claim 2 display device.
PCT/JP2007/062307 2006-10-11 2007-06-19 Liquid crystal display WO2008044370A1 (en)

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US9411470B2 (en) 2002-02-20 2016-08-09 Apple Inc. Light sensitive display with multiple data set object detection
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