WO2008044368A1 - Liquid crystal display - Google Patents

Liquid crystal display Download PDF

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Publication number
WO2008044368A1
WO2008044368A1 PCT/JP2007/062298 JP2007062298W WO2008044368A1 WO 2008044368 A1 WO2008044368 A1 WO 2008044368A1 JP 2007062298 W JP2007062298 W JP 2007062298W WO 2008044368 A1 WO2008044368 A1 WO 2008044368A1
Authority
WO
WIPO (PCT)
Prior art keywords
liquid crystal
crystal display
display device
photodiode
pixels
Prior art date
Application number
PCT/JP2007/062298
Other languages
French (fr)
Japanese (ja)
Inventor
Hiromi Katoh
Christopher Brown
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006277837 priority Critical
Priority to JP2006-277837 priority
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008044368A1 publication Critical patent/WO2008044368A1/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/13338Input devices, e.g. touch-panels
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F2001/13312Circuits comprising a photodetector not for feedback

Abstract

Disclosed is a liquid crystal display wherein sensitivity of a photodiode arranged within a display region of an active matrix substrate is improved. The liquid crystal display comprises an active matrix substrate (1) and a counter substrate (3) provided with a color filter. The active matrix substrate (1) comprises a plurality of pixels arranged in matrix, and a plurality of photodiodes (20) arranged within the display region. Each pixel has three sub-pixels (5a-5c). The color filter has a red, green or blue colored layer corresponding to each sub-pixel. The photodiodes (20) have such a characteristic that the sensitivity increases as the wavelength of an incident light is shorter. In addition, each photodiode (20) is so arranged that its light sensing region (a layer i (22)) overlaps a blue colored layer (6a) in the thickness direction of the liquid crystal display.

Description

The liquid crystal display device

Technical field

[0001] The present invention relates to a liquid crystal display device which includes a photodiode that reacts to light incident from the observer side of the display screen.

BACKGROUND

In recent years, liquid crystal display device, the power-saving, thin, from features such as light weight, a computer, a cellular phone, PDA, has been widely adopted as display devices for gaming machines. In general, liquid crystal display equipment includes a liquid crystal display panel, and Roh backlight for illuminating it from the back. The liquid crystal display panel is configured by sandwiching a liquid crystal layer between the active matrix substrate and the counter substrate.

[0003] The active matrix substrate, a plurality of pixels on a glass substrate formed in a matrix is ​​configured. Further, when the color display is performed, usually, one pixel is constituted by three sub-pixels. Each sub-pixel, and a TFT and the pixel electrode. Furthermore, the counter substrate includes a counter electrode and a color filter on a glass substrate. Karafi filter, for each sub-pixel has a colored layer of red (R), green (G) or blue (B).

[0004] In this liquid crystal display device, the voltage applied between each pixel electrode and the counter electrode is adjusted, the transmittance of the liquid crystal layer is adjusted for each sub-pixel. As a result, by the illumination light of the backlight transmitted through the liquid crystal layer and the coloring layer, the image is displayed on the display screen.

[0005] Thus, the liquid crystal display device of a conventional, a function of displaying an image, Ru, but has been proposed a liquid crystal display device having even a recent years, image capture function (e.g., patent in the disclosed liquid crystal display device in reference 1.) o Patent Document 1, the active matrix substrate, a plurality of photodiodes are formed in a matrix, liquid crystal display panel functions as an area sensor.

[0006] Moreover, Te contact, in Patent Document 1, as the photodiodes, PIN Daio de lateral structure is used. Each PIN diode, by using the process of the TFT, the common silicon film and TFT, p layer, i layer, and is formed by providing an n-layer in order. Further, Bruno backlight side of the PIN diode is usually illumination light from Roh backlight is to prevent from entering the PIN diode, the light-shielding film is provided.

Patent Document 1: JP 2006- 3857 JP

Disclosure of the Invention

Problems that the Invention is to you'll solve

[0007] Incidentally, the availability Te Patent Document 1, since the area sensor by a plurality of photodiodes are configured, each of the photodiodes is disposed in the display area. Therefore, the light observer side force is also incident on the liquid crystal display panel passes through the counter substrate and a liquid crystal layer and is incident on the photodiodes. Therefore, in the liquid crystal display device of Patent Document 1, the amount of light that can be detected by each photodiode is reduced, the sensitivity is a problem that to decrease the overall system.

[0008] An object of the present invention is to solve the above problems, Ru near to provide a liquid crystal display device for obtaining aims to improve the photodiode sensitivity is placed on the active matrix substrate in the display area.

Means for Solving the Problems

[0009] The liquid crystal display device of the present invention in order to achieve the above object, a liquid crystal display device comprising an active matrix substrate and a counter substrate provided with a color filter, before Symbol active matrix substrate, a matrix a plurality of pixels arranged in, and a plurality of photodiodes arranged in the display area, the plurality of pixels, each having three sub-pixels, wherein the color filter, for each of the sub-pixel, red, with the green or blue colored layer, the photo diode has a characteristic that the wavelength of the incident light is shorter sensitivity increases, and the light detection region of the photodiode in the thickness direction of the liquid crystal display device Contact, Te so as to overlap the colored layers blue, are arranged, characterized Rukoto. Effect of the invention

[0010] As described above, in the liquid crystal display device of the present invention, the photodiode in the display region of the active matrix substrate, in accordance with the sensitivity characteristics, is disposed so that the most sensitive. Therefore, according to the liquid crystal display device of the present invention, as compared with the conventional, it is possible to improve the sensitivity of the photodiode.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] [FIG 1] FIG 1 is a plan view partially showing a structure of a liquid crystal display device in an embodiment of the present invention.

FIG. 2 is a sectional view showing a cross section obtained by cutting along cutting lines A- AI this in FIG.

FIG. 3 is a graph showing the spectral sensitivity of the photodiode shown in FIGS. BEST MODE FOR CARRYING OUT THE INVENTION

[0012] The liquid crystal display device of the present invention, the active matrix substrate, a liquid crystal display device and a counter substrate provided with a color filter, the active matrix substrate includes a plurality of pixels arranged in a matrix , and a plurality of photodiodes arranged in the display area, the plurality of pixels, each having three sub-pixels, wherein Karafu filter, for each said sub-pixel, a red, green or blue colored a layer, the photodiode has a characteristic that the wavelength of the incident light sensitivity shorter increases, and, on the colored layers blue light detection region in the thickness direction of the liquid crystal display device of the Fotoda Iodo so as to overlap, characterized in that it is arranged.

[0013] The liquid crystal display device in the present invention, the photodiode, the formed by Akuti blanking matrix substrate silicon film provided on a base substrate, the silicon film, polycrystalline silicon or continuous grain formed by field-crystal silicon, and the silicon film along the surface direction of the sequentially disposed, a semiconductor region of a first conductivity type, an intrinsic semiconductor material region, and the second conductivity type of said first conductivity type opposite comprising a semiconductor region, the intrinsic semiconductor material region may be a mode to be the light detection region.

[0014] (Embodiment 1)

Hereinafter, a liquid crystal display device according to the embodiment of the present invention will be described with reference to FIGS. Figure 1 is a plan view showing the configuration part batchwise in the liquid crystal display device in an embodiment of the present invention. Figure 2 is a sectional view showing a cross section obtained by cutting along cutting lines A- AI this in FIG.

[0015] Incidentally, FIG. 1, which primarily shows the structure of a pixel formed on an active matrix substrate, for a counter substrate shows only the outer shape of the color filters by a chain line. The layer insulating film is not described in FIG. 1, it is shown by hatching in FIG.

[0016] The liquid crystal display device of this embodiment includes a liquid crystal display panel 4 shown in FIG. 2, a backlight (not shown) for illuminating it from the back. As shown in FIGS. 1 and 2, the liquid crystal display panel 4, the active matrix substrate 1, a liquid crystal layer 2, and a counter substrate 3, and is formed by sandwiching a liquid crystal layer 2 between two substrates. Although not shown, a liquid crystal display device according to the present implementation also includes a variety of optical films other.

[0017] Further, as shown in FIG. 1, the active matrix substrate 1 includes a pixel. 1 and 2 show, although not shown, the pixel is a plurality arranged in a matrix. In Akuti blanking matrix substrate 1, a region in which a plurality of pixels are arranged is the display region. Also, one pixel is constituted by three sub-pixels.

[0018] FIG. 1 is shown only three of the sub-pixel 5a~5c! /, Ru. As shown in FIG. 1, each subpixel bodies 5a to 5c, it comprises an active element 7 and a transparent electrode 8. Active element 7 is a thin film transistor: a (TFT Thin Film Transistor). The transparent electrode 8 is a pixel electrode made form of ITO or the like.

[0019] In addition,!, Te in this embodiment, the active element 7 includes a silicon film 11 having a source region and a drain region are formed, and a gate electrode 9. Silicon film 11, since it is excellent in terms of rate of charge transfer, and is formed by a continuous grain silicon (CGS).

[0020] The gate electrode 9 is horizontally arranged along the gate line 10 formed integrally with the screen. The source electrode 12 is connected to the source region, the drain electrode 14 is connected to the drain region. The source electrode 12 is integrally formed with the source over the scan lines 13 disposed along the vertical direction of the screen. The drain electrode 14 is connected to the transparent electrode 8. In Figure 1, 15 denotes a wiring for storage capacitance, and 16 denotes a region where the storage capacitor is formed.

[0021] Further, as shown in FIGS. 1 and 2, the active matrix substrate 1 includes a photodiode 20 within the display area. 1 and 2 show, although only a single photodiode 20 shown, in fact, the active matrix substrate 1, for each one pixel, the photodiode 20 is disposed. A plurality of photodiodes 20 arranged in each pixel functions as a collar Asensa.

[0022] As shown in FIG. 2, in this embodiment, photodiode 20 is a PIN diode having a lateral structure. Photodiode 20 includes a silicon film provided on a glass substrate 26 serving as the active matrix substrate 1 Total over scan substrate.

Silicon film constituting the [0023] photodiode 20 may utilize the formation of the active element 7 processes, and are formed simultaneously. Therefore, the photodiode 20 is also formed by the charge superior continuous grain silicon to the moving speed of the (CGS). Further, the silicon film, in order along the surface direction, p-type semiconductor region (p layer) 21, an intrinsic semiconductor region (Qian) 22 and n-type semiconductor region (n layer) 23 is provided.

[0024] In the photodiode 20, i layer 22 serves as a light detection region. Te present embodiment smell, i layer 22 may be a region close to the electrically neutral than the p layer 21 and n layer 23 is adjacent. i layer 22 is quite areas and free of impurities, conduction electron density and the hole density are equal V, it is preferably in the range of area.

[0025] In FIG. 2, 28 is an insulating film formed on the glass substrate 26, the photo diode 20 is formed on this. Further, the lower layer of the photodiode 20, since the illumination light from Roh click light (not shown) to prevent from entering the photodiode 20, the light shielding film 27 is formed of a conductive metallic material . Furthermore, the photodiode 20 is covered with the interlayer insulating film 29 and 30. 24 shows a wiring connected to the p layer 21, 25 denotes a wiring connected to the n layer 23.

[0026] Further, as shown in FIGS. 1 and 2, the counter substrate 3 includes a Karafi filter having a plurality of colored layers. Colored layer is provided for each subpixel. In Figure 1, among a number wearing color layer, only the colored layer 6a~6c corresponding to each sub-pixel 5a~5c are shown.

The [0027] Specifically, the colored layer 6a~6c is on the surface of the glass substrate 31 as a base substrate of the counter substrate 3 in the thickness direction of the liquid crystal display device, so as to overlap the transparent electrodes 8 of the corresponding sub-pixel It is formed in to. Further, between the adjacent colored layer, black matrix task 32 is provided for light shielding. Also, so as to cover all the colored layer, the counter electrode 33 of transparent are formed.

[0028] Thus, the liquid crystal display device in this embodiment, as in the conventional liquid crystal display device is provided with the display function and an imaging function, in accordance with the sensitivity characteristics of the photodiode 20, the photodiode in that the arrangement of the 20 has been performed, it is different from the conventional liquid crystal display device. This will be described with reference to FIG. Figure 3 is a graph showing the spectral sensitivity of the photodiode shown in FIGS.

[0029] As described above, the silicon film constituting the photodiode 20, continuous grain silicon

It is formed by (CGS). Therefore, as shown in FIG. 3, a photodiode 20 which is a continuous grain silicon Accordingly formation, the wavelength of the incident light is short !, more sensitivity has a characteristic of increasing. That is, the photodiode 20 is shorter in blue light the length of the reaction easily force wavelengths wavelengths, difficulty respond to red light, it has characteristics, Ru.

[0030] Therefore, as shown in FIGS. 1 and 2, the photodiode 20, the thickness Direction of the semiconductor device, are arranged so as to overlap the colored layer 6a of blue (B). As a result, according to the liquid crystal display device of this embodiment, as compared with the conventional, it is possible to improve the sensitivity in the photodiode. Incidentally, the colored layer 6b is colored layers of red (R), colored layers 6c is a colored layer of green (G).

[0031] The formation of the silicon film of continuous grain silicon, for example, can row Ukoto by the following steps. First, sequentially deposited and Sani匕 silicon film and Amorufa scan silicon film on the interlayer insulating film 28 shown in FIG. Next, the surface layer of the amorphous silicon film to form a nickel thin film as a catalyst for the crystallization accelerating. Next, Aniru by reacting a nickel thin film and § mode Rufasu silicon film, forming a crystalline silicon layer on these interfaces. Thereafter, by etching or the like to remove the layer of the nickel film and 珪I匕 nickel unreacted. Then, when the progress of crystallization performed Aniru the remaining silicon film, a silicon film formed by a continuous grain silicon is obtained. Then, the implementation of formation of photoresist and Etsuchin grayed, the shape of the silicon film is a predetermined shape, further, various ion implantation is performed, the photodiode 20 is completed.

[0032] In the present invention, the photo diode 20 is not limited to those formed by the silicon film of continuous grain silicon. Photodiode 20 is not limited as long as having the properties as sensitivity wavelength is short of the incident light increases. Therefore, Fotodaio over de 20 may be, for example, one formed by a polycrystalline silicon. Polycrystalline silicon is also because has the same properties and characteristics of continuous grain silicon shown in FIG.

[0033] of the silicon film by the polycrystalline silicon formation, for example, it can be carried out as follows.

First, a silicon film of amorphous silicon. Then, the relative silicon film of amorphous silicon, performed equal to dehydrogenation heated for 2 hours at for example 500 ° C, further, to implement Aniru, it is crystallized. As a result, the silicon film of polycrystalline silicon is obtained. The method of Aniru known Rezaaniru methods, for example, a method of irradiating the like of the laser beam by E excimer lasers in the amorphous silicon film.

Industrial Applicability

[0034] As described above, according to the present invention, in a liquid crystal display device provided with a full ot diode that reacts to light incident from the observer side of the display screen, it is FIG Rukoto the increased sensitivity of the photodiode . Therefore, the liquid crystal display device of the present invention may have industrial applicability.

Claims

The scope of the claims
[1] A liquid crystal Display device comprising an active matrix substrate and a counter substrate provided with a color filter,
The active matrix substrate includes a plurality of pixels arranged in a matrix, and a plurality of photodiodes arranged in the display area,
Wherein the plurality of pixels, each having three sub-pixels,
The color filter for each of the sub-pixels, red, with the green or blue colored layer, the photo diode has a characteristic that the wavelength of the incident light is shorter sensitivity is increased, one 且, the photodiode as the light detection region overlaps the colored layer of blue in the thickness direction of the liquid crystal display device, it is located! The liquid crystal display device, characterized in that Ru.
[2] the photodiode is formed by the silicon film provided on the base substrate of the active matrix substrate,
The silicon layer is formed by polycrystalline silicon or continuous grain silicon, and the silicon film along the surface direction of the sequentially disposed, a semiconductor region of a first conductivity type, an intrinsic semiconductor region, and the first comprising a semiconductor region of a second conductivity-type conductivity and the opposite, the intrinsic semiconductor region, the liquid crystal display device according to claim 1 serving as the light detection region.
PCT/JP2007/062298 2006-10-11 2007-06-19 Liquid crystal display WO2008044368A1 (en)

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JP2006-277837 2006-10-11

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US7830461B2 (en) 2002-05-23 2010-11-09 Apple Inc. Light sensitive display
US7872641B2 (en) 2002-02-20 2011-01-18 Apple Inc. Light sensitive display
US8207946B2 (en) 2003-02-20 2012-06-26 Apple Inc. Light sensitive display
US8441422B2 (en) 2002-02-20 2013-05-14 Apple Inc. Light sensitive display with object detection calibration
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US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
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Cited By (35)

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US8441422B2 (en) 2002-02-20 2013-05-14 Apple Inc. Light sensitive display with object detection calibration
US9411470B2 (en) 2002-02-20 2016-08-09 Apple Inc. Light sensitive display with multiple data set object detection
US9971456B2 (en) 2002-02-20 2018-05-15 Apple Inc. Light sensitive display with switchable detection modes for detecting a fingerprint
US9134851B2 (en) 2002-02-20 2015-09-15 Apple Inc. Light sensitive display
US7872641B2 (en) 2002-02-20 2011-01-18 Apple Inc. Light sensitive display
US8570449B2 (en) 2002-02-20 2013-10-29 Apple Inc. Light sensitive display with pressure sensor
US7852417B2 (en) 2002-05-23 2010-12-14 Apple Inc. Light sensitive display
US7880819B2 (en) 2002-05-23 2011-02-01 Apple Inc. Light sensitive display
US7880733B2 (en) 2002-05-23 2011-02-01 Apple Inc. Light sensitive display
US7830461B2 (en) 2002-05-23 2010-11-09 Apple Inc. Light sensitive display
US8044930B2 (en) 2002-05-23 2011-10-25 Apple Inc. Light sensitive display
US9354735B2 (en) 2002-05-23 2016-05-31 Apple Inc. Light sensitive display
US8207946B2 (en) 2003-02-20 2012-06-26 Apple Inc. Light sensitive display
US8289429B2 (en) 2004-04-16 2012-10-16 Apple Inc. Image sensor with photosensitive thin film transistors and dark current compensation
US7773139B2 (en) 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
EP2214150A4 (en) * 2007-11-29 2011-02-23 Sharp Kk Image display device
EP2214150A1 (en) * 2007-11-29 2010-08-04 Sharp Kabushiki Kaisha Image display device
US8248395B2 (en) 2007-11-29 2012-08-21 Sharp Kabushiki Kaisha Image display device
WO2010041489A1 (en) * 2008-10-09 2010-04-15 シャープ株式会社 Photodiode, photodiode-equipped display device, and fabrication method therefore
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US9519361B2 (en) 2011-06-22 2016-12-13 Apple Inc. Active stylus
US9921684B2 (en) 2011-06-22 2018-03-20 Apple Inc. Intelligent stylus
US9582105B2 (en) 2012-07-27 2017-02-28 Apple Inc. Input device for touch sensitive devices
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US9939935B2 (en) 2013-07-31 2018-04-10 Apple Inc. Scan engine for touch controller architecture
US10067580B2 (en) 2013-07-31 2018-09-04 Apple Inc. Active stylus for use with touch controller architecture
US10061449B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10061450B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch
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