WO2008044183A3 - Integrated circuit with iddq test facilities and ic iddq test method - Google Patents

Integrated circuit with iddq test facilities and ic iddq test method Download PDF

Info

Publication number
WO2008044183A3
WO2008044183A3 PCT/IB2007/054072 IB2007054072W WO2008044183A3 WO 2008044183 A3 WO2008044183 A3 WO 2008044183A3 IB 2007054072 W IB2007054072 W IB 2007054072W WO 2008044183 A3 WO2008044183 A3 WO 2008044183A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
power supply
supply rail
ic
test mode
iddq test
Prior art date
Application number
PCT/IB2007/054072
Other languages
French (fr)
Other versions
WO2008044183A2 (en )
Inventor
Villagra Luis Elvira
Rinze I M Meijer
Vazquez Josep Rius
Original Assignee
Nxp Bv
Villagra Luis Elvira
Rinze I M Meijer
Vazquez Josep Rius
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30Marginal testing, e.g. varying supply voltage
    • G01R31/3004Current or voltage test
    • G01R31/3008Quiescent current [IDDQ] test or leakage current test

Abstract

An IC (10) is disclosed that comprises a first power supply rail (110) and a second power supply rail (130) and a plurality of circuit portions (100, 400, 700) respectively coupled between the first power supply rail (110) and the second power supply rail (130). A first circuit portion thereof is coupled to the first power supply rail (110) via a first conductive path comprising a first enable switch (120), and to a test mode power supply rail (110, 310) via a second conductive path for enabling a quiescent current measurement (610) of the first circuit portion in a test mode of the integrated circuit (10). The second conductive path comprises a sensing switch (220) for coupling the first portion to the test mode power supply rail (110, 310) in the test mode. The test mode power supply rail may be same rail as the first power supply rail (110), in which case the IC (10) may comprise a current sensor (230) to facilitate on-chip IDDQ measurements. The IC (10) of the present invention allows for accurate IDDQ measurements of parts of the IC at little area overhead cost only.
PCT/IB2007/054072 2006-10-09 2007-10-05 Integrated circuit with iddq test facilities and ic iddq test method WO2008044183A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP06121966 2006-10-09
EP06121966.3 2006-10-09

Publications (2)

Publication Number Publication Date
WO2008044183A2 true WO2008044183A2 (en) 2008-04-17
WO2008044183A3 true true WO2008044183A3 (en) 2008-06-05

Family

ID=39247747

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2007/054072 WO2008044183A3 (en) 2006-10-09 2007-10-05 Integrated circuit with iddq test facilities and ic iddq test method

Country Status (1)

Country Link
WO (1) WO2008044183A3 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860817B2 (en) 2011-07-25 2014-10-14 Aptina Imaging Corporation Imaging systems with verification circuitry for monitoring standby leakage current levels
US9506977B2 (en) 2014-03-04 2016-11-29 International Business Machines Corporation Application of stress conditions for homogenization of stress samples in semiconductor product acceleration studies

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6043672A (en) * 1998-05-13 2000-03-28 Lsi Logic Corporation Selectable power supply lines for isolating defects in integrated circuits
WO2005047911A1 (en) * 2003-11-05 2005-05-26 International Business Machines Corporation Hot switchable voltage bus for iddq current measurements
US20060125470A1 (en) * 2004-12-10 2006-06-15 Wei Chen System and method for IDDQ measurement in system on a chip (SOC) design

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6043672A (en) * 1998-05-13 2000-03-28 Lsi Logic Corporation Selectable power supply lines for isolating defects in integrated circuits
WO2005047911A1 (en) * 2003-11-05 2005-05-26 International Business Machines Corporation Hot switchable voltage bus for iddq current measurements
US20060125470A1 (en) * 2004-12-10 2006-06-15 Wei Chen System and method for IDDQ measurement in system on a chip (SOC) design

Also Published As

Publication number Publication date Type
WO2008044183A2 (en) 2008-04-17 application

Similar Documents

Publication Publication Date Title
US7923987B2 (en) Magnetic sensor integrated circuit with test conductor
US7528593B2 (en) Current measuring device
WO2009040998A1 (en) Contactless charger
US20090134904A1 (en) Analog ic having test arrangement and test method for such an ic
US7615986B2 (en) Temperature detection function-incorporating current sensor
CN103325327A (en) Display panel and detecting line and detecting method for display panel
US20140320150A1 (en) Shunt resistor based current sensor
JP2002153437A (en) Body impedance measurement device
CN101512361A (en) Testable integrated circuit and IC test method
US7224169B2 (en) Methods and apparatus for non-contact testing and diagnosing of inaccessible shorted connections
Abuhamdeh et al. Separating temperature effects from ring-oscillator readings to measure true IR-drop on a chip
US6696845B2 (en) Noise evaluation circuit for IC tester
Abdallah et al. Defect-oriented non-intrusive RF test using on-chip temperature sensors
US20110031984A1 (en) Test apparatus
US20120101750A1 (en) Device for measuring power supply efficiency and method for using same
US20070007972A1 (en) Measurement bias tee
US6825651B2 (en) Test method for characterizing currents associated with powered components in an electronic system
CN200989917Y (en) Voltage sensor
CN204085337U (en) Initiating explosive device test system
CN101706551A (en) Testing circuit for forecasting failure of back bias voltage unstability of integrated circuit
US20120062268A1 (en) Method and device for measuring the reliability of an integrated circuit
US20070075370A1 (en) Thermal sensing method and apparatus using existing ESD devices
KR20050066853A (en) A kelvin pattern with 2 terminals, and a measuring method thereof
WO2009050831A1 (en) Distance measuring equipment and distance measuring method
CN204903641U (en) Current detection system of GNSS module

Legal Events

Date Code Title Description
NENP Non-entry into the national phase in:

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07826664

Country of ref document: EP

Kind code of ref document: A2