WO2007125724A1 - 電子部品及びその製造方法 - Google Patents
電子部品及びその製造方法 Download PDFInfo
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- WO2007125724A1 WO2007125724A1 PCT/JP2007/057163 JP2007057163W WO2007125724A1 WO 2007125724 A1 WO2007125724 A1 WO 2007125724A1 JP 2007057163 W JP2007057163 W JP 2007057163W WO 2007125724 A1 WO2007125724 A1 WO 2007125724A1
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 20
- 230000007797 corrosion Effects 0.000 claims abstract description 47
- 238000005260 corrosion Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 238000010897 surface acoustic wave method Methods 0.000 claims description 47
- 238000005520 cutting process Methods 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000010408 film Substances 0.000 description 46
- 230000001681 protective effect Effects 0.000 description 13
- 238000012360 testing method Methods 0.000 description 12
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02937—Means for compensation or elimination of undesirable effects of chemical damage, e.g. corrosion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
Definitions
- the present invention relates to an electronic component such as a surface acoustic wave device and a method for manufacturing the same, and more specifically, an electronic component having an improved structure of an electrode pattern connected to an electronic component function unit and a method for manufacturing the same. Regarding the method.
- Patent Document 1 discloses an example of a manufacturing method that makes it possible to measure the characteristics of a large number of surface acoustic wave devices at the wafer stage.
- FIG. 11 is a schematic partial plan view for explaining a method of measuring characteristics of a surface acoustic wave filter device as an electronic component on a wafer in the manufacturing method described in Patent Document 1.
- a grid-like conductive pattern 502 is formed on the wafer 501.
- An electrode structure for forming one surface acoustic wave device 503 is formed in one rectangular region surrounded by the grid-like conductive pattern 502.
- the illustrated electrode structure is formed in each region surrounded by the grid-like conductive pattern 502, so that a large number of surface acoustic wave devices 503 are formed on the wafer 501. Is formed.
- the surface acoustic wave device 503 is a surface acoustic wave filter having a ladder type circuit configuration, and is conductive so that a plurality of 1-port SAW resonators 504 to 508 have a ladder type circuit configuration. It is electrically connected by a pattern.
- the 1-port SAW resonators 504 to 508 are electrically connected to the grid-like conductive pattern 502 by SAW resonators 504 and 508 force electrode patterns 509 and 510 connected to the ground potential.
- the hot probe and the earth probe are brought into contact with the input side of the surface acoustic wave filter device 503, and the hot probe and the earth probe are also brought into contact with the output side. And measure the characteristics.
- the characteristics are measured by contacting the ground-side probe with the electrode pattern 509 on the input side and the ground-side probe with the electrode pattern 510 on the output side.
- the wafer 501 is divided. This division is performed by cutting the woofer 501 along the alternate long and short dash lines A and B.
- Patent Document 1 JP-A-10-233642
- a cut surface appears at a portion along the alternate long and short dash line A.
- part of the electrode patterns 509 and 510 is cut and exposed to the cut surface.
- Corrosion such as that described above may occur in various ways in which an electrode pattern is exposed on a cut surface when a wafer is divided after a large number of electronic components are formed on a wafer that is formed only by a surface acoustic wave device. It was also a problem for electronic components.
- an object of the present invention is to corrode based on moisture intrusion from between the electrode pattern drawn to the edge connecting the main surface and the side surface of the substrate and the substrate. Accordingly, it is an object of the present invention to provide an electronic component and a method for manufacturing the same, which are difficult to progress and thus have high reliability.
- An electronic component of the present invention includes a substrate having first and second main surfaces facing each other and a side surface connecting the first and second main surfaces, and a first main surface of the substrate.
- the electrode extends from the edge of the side surface of the substrate and the first main surface to the inside on the first main surface; and A second electrode pattern provided with a gap of a predetermined width from an end portion in the first main surface of the first electrode pattern; and an end portion on the gap side of the first electrode pattern;
- a third electrode pattern that covers an end of the second electrode pattern on the gap side and crosses the gap, and the third electrode pattern includes the first and second electrodes. It is characterized by a metal film strength that has better corrosion resistance than patterns.
- the gap-side end portion of the first electrode pattern is opposed to the gap-side end portion of the second electrode pattern with a gap therebetween.
- the third electrode pattern is linear. In this case, the progress of corrosion based on the intrusion of moisture can be prevented more reliably.
- the gap side of the second electrode pattern is preferably An electrode pattern portion in which an end portion is disposed at a position shifted from the extension of the first electrode pattern, and the third electrode pattern is located on the extension of the first electrode pattern It has a corner that is bent so as to extend toward the second electrode pattern.
- the third electrode pattern has a crank shape. When the third electrode pattern has a crank shape, the progress of corrosion due to intrusion of moisture or the like can be more reliably prevented.
- the shape is not particularly limited, but preferably the first linear portion and the first straight line A second linear portion connected to the end of the first linear portion so as to form 90 ° with the linear portion, and an end of the second linear portion connected to the first linear portion Connected to the opposite end and a shape having a third linear portion extending in parallel with the first linear portion, in which case corrosion due to moisture intrusion, etc. The ability to prevent progress more reliably.
- the electronic component is not particularly limited, but the present invention can be suitably used for a surface acoustic wave device.
- the present invention can be suitably used for a surface acoustic wave device.
- the substrate is a piezoelectric substrate, and the first to third electrodes are formed as the electrodes formed on the piezoelectric substrate.
- a ground pad connected to the second electrode pattern and an IDT electrode connected to the ground pad are further formed, thereby forming a surface acoustic wave device. ing.
- the first and second electrode patterns include a kind of electrode layer selected from the group consisting of Cu, Ag, or an alloy thereof as a main electrode layer. Since Cu, Ag, or an alloy thereof is excellent in conductivity, the first and second electrode patterns excellent in conductivity can be formed.
- the third electrode pattern includes A or A1 alloy as a main electrode layer. In this case, since A and A1 have excellent corrosion resistance, the progress of corrosion inside the third electrode pattern can be effectively suppressed.
- a method of manufacturing an electronic component according to the present invention includes a mother substrate and an electrode structure formed to form a plurality of electronic components of the present invention on one main surface of the mother substrate.
- a step of preparing a wafer, and the wafer is arranged so as to reach an edge between the first main surface and the side surface of the substrate of each electronic component obtained by dividing the first electrode pattern.
- a step of obtaining individual electronic components by cutting in the middle of one electrode pattern.
- a lattice electrode pattern is formed on the wafer, and one electronic component is provided in each region surrounded by the lattice electrode pattern.
- the first electrode pattern is connected to the grid electrode pattern, and the first electrode pattern is cut in the middle of a region surrounded by the grid electrode pattern. Then, the wafer is cut.
- the first electrode pattern formed in each region is electrically connected by the grid electrode pattern, the first electrode pattern is connected to the ground potential of each electronic component.
- the third electrode pattern suppresses the progress of corrosion, so that the reliability can be improved. Therefore, it is possible to efficiently obtain a large number of electronic components by cutting a large number of electronic components from the wafer.
- the first electrode pattern extends from the edge of the side surface of the substrate and the first main surface to the inside of the first main surface, and the first electrode pattern
- the second electrode pattern is provided so as to face the end portion of the first main surface with a predetermined gap, and the third electrode pattern force is opposed to the first and second electrode patterns. Since the third electrode pattern is made of a metal film having excellent corrosion resistance, the first electrode pattern force corrosion is prevented. Even if it has progressed, the progress of corrosion is suppressed in the third electrode pattern. Therefore, since corrosion does not easily proceed to the second electrode pattern located inside the third electrode pattern, it is possible to provide an electronic component with excellent reliability that is less likely to deteriorate with time.
- the wafer is placed in the middle of the first electrode pattern.
- a large number of electronic components are obtained by cutting. Therefore, in the obtained electronic component, the third electrode pattern made of a metal film having excellent corrosion resistance so as to cover the portion where the first and second electrode patterns are opposed to each other inside the first electrode pattern. Therefore, even if the corrosion progresses inward from the first electrode pattern, the progress of the corrosion is suppressed in the portion where the third electrode pattern is provided. Therefore, it is difficult for corrosion to proceed to the inner second electrode pattern. Therefore, it is possible to provide an electronic component that is less likely to deteriorate characteristics over time and has excellent reliability.
- FIGs. 1 (a) and (b) are a schematic partial cutaway plan view and a partial cutout for explaining the main part of the electrode structure of the electronic component according to the first embodiment of the present invention. Front sectional drawing.
- FIGS. 2 (a) to 2 (g) are schematic front cross-sectional views for explaining each process for manufacturing a surface acoustic wave device as an electronic component of a second embodiment of the present invention.
- FIG. 3 is a schematic partial enlarged plan view showing an electrode structure formed on the upper surface of a mother substrate in the manufacturing method of the second embodiment, in the step shown in FIG. 2 (c);
- (B) is a plan view schematically showing the electrode structure of the 1-port SAW resonator.
- FIG. 4 is a partially enlarged plan view for schematically explaining the electrode structure after the step shown in FIG. 2 (e) in the manufacturing method of the second embodiment.
- FIG. 5 is a partially enlarged plan view for schematically explaining the electrode structure after the step shown in FIG. 2 (f) in the manufacturing method of the second embodiment.
- FIG. 6 is a circuit diagram showing a circuit configuration of a ladder type filter as a surface acoustic wave device obtained in a second embodiment.
- FIG. 7 is a graph showing frequency characteristics before and after a moisture resistance test of a conventional surface acoustic wave device.
- FIG. 8 is a diagram showing frequency characteristics before and after a moisture resistance test of the surface acoustic wave device obtained according to the second embodiment.
- FIG. 9 is a schematic partially cut-away plan view for explaining a modification of the electronic component of the first embodiment.
- FIGS. 10A to 10C are schematic partial cutaway plan views for explaining an example of the shape of the third electrode pattern in the modification of the first embodiment.
- FIG. 11 is a schematic partially cutaway enlarged plan view for explaining a characteristic measuring method of a conventional surface acoustic wave filter device.
- FIGS. 1 (a) and 1 (b) are a schematic partial cutaway plan view for explaining the principle that corrosion through an electrode is suppressed in the electronic component according to the first embodiment of the present invention.
- FIG. 4 is a front sectional view of a schematic part cutout.
- the electronic component 1 has a substrate 2.
- the substrate 2 has a first main surface 2a and a second main surface 2b facing each other.
- the substrate 2 has a side surface 2c that connects the first and second main surfaces.
- An electrode shown in FIG. 1 (a) is formed on the first main surface 2a of the substrate 2. That is, the first electrode pattern 3 extending from the edge of the side surface 2c of the substrate 2 and the first main surface 2a to the inside of the first main surface 2a is formed as an electrode. Then, the second electrode pattern 4 is provided so as to face the end 3a in the first main surface 2a of the first electrode pattern 3 with a predetermined gap G therebetween. The third electrode pattern 5 is provided so as to cover the portion where the first and second electrode patterns 3 and 4 are opposed to each other and reach the first and second electrode patterns 3 and 4. .
- the third electrode pattern 5 has a metal film force having better corrosion resistance than the metal films constituting the first and second electrode patterns.
- FIG. 1 a force schematically showing only a portion where the first to third electrode patterns 3 to 5 are formed in the vicinity of the side surface 2c of the substrate 2 of the electronic component 1 In the electronic component 1, the substrate In 2, various electronic component function parts for functioning as electronic components are connected so as to be connected to the second electrode pattern 4.
- the electronic component functional unit include various electrodes such as an IDT electrode and a capacitor electrode, or a resistor, a piezoelectric body, or a dielectric body provided so as to be electrically connected to the electrode pattern 4. It is not limited.
- the third electrode pattern 5 is more excellent in corrosion resistance than the first and second electrode patterns 3 and 4.
- metal films having excellent corrosion resistance include, but are not limited to, force A and Au, and are preferably used because they are inexpensive and excellent in moisture resistance and corrosion resistance.
- the third electrode pattern 5 is not necessarily formed of a single metal film.
- the third electrode pattern 5 may be formed of a laminated metal film including a metal film having excellent corrosion resistance, such as A1, as a main electrode layer. It may be formed of an alloy mainly composed of.
- the first and second electrode patterns 3, 4 may be formed of an appropriate metal material having excellent conductivity such as Cu, Ag, or an alloy thereof, which is less resistant to corrosion than the third electrode pattern 5. .
- the first and second electrode patterns also need to be formed from a single metal film, as long as they have an electrode layer mainly composed of Cu, Ag, or an alloy thereof. It may be formed of any metal film.
- the first electrode pattern 3 is exposed at the edges of the side surface 2c and the first main surface 2a.
- Such a structure is usually obtained by cutting a large number of electronic components 1 from a wafer by dicing when mass-producing the electronic components 1.
- the side surface 2c is a surface that is cut and exposed by dicing, external moisture or the like may easily enter at the interface between the first electrode pattern 3 and the side surface 2c.
- the corrosion stays up to the end 3a of the first electrode pattern 3.
- the third electrode pattern 5 is excellent in corrosion resistance, the progress of corrosion stays at the end 3a and hardly progresses further inside. [0041] Accordingly, since corrosion of the second electrode pattern 4 is unlikely to occur, in the electronic component 1, corrosion does not easily progress inward over time, and characteristic deterioration is unlikely to occur.
- the present invention is a structure in which the electrode is provided so as to reach the inside from the edge of the side surface 2c of the substrate 2 and the first main surface 2a. It is characterized by preventing the deterioration of characteristics due to, and the applied electronic parts are not particularly limited, but the following was applied to the surface acoustic wave device with reference to FIGS. An electronic component and a method for manufacturing the electronic component according to the second embodiment will be described.
- a wafer for forming a plurality of surface acoustic wave devices is prepared.
- the wafer manufacturing method will be described with reference to FIGS. 2 (a) to (g) and FIGS. 3 to 5.
- Fig. 2 (a) it is made of a piezoelectric single crystal such as LiTaO or a piezoelectric ceramic.
- a photoresist pattern 13 is formed by performing a photosensitive process. This photoresist pattern 13 is applied to the region excluding the region where the electrode structure described later is formed.
- an etchant is used as indicated by an arrow, and the SiO film 12 is etched.
- This etchant does not dissolve the photoresist pattern 13, but the SiO film
- the SiO film 12 is removed in the region where the electrode structure is formed.
- a Cu film is formed on the entire surface by a thin film forming method such as sputtering or vapor deposition. Thereafter, the photoresist pattern 13 and the Cu film formed on the photoresist pattern 13 are removed by a lift-off method using a lift-off method using a solvent such as acetone. In this way, as shown in FIG. 2 (c), the Cu film 14 is formed in the electrode formation region.
- a thin film forming method such as sputtering or vapor deposition.
- FIG. 3 (a) is a partial plan view schematically showing an electrode structure made of the Cu film 14 thus provided.
- a grid electrode pattern 21 is formed.
- the electrode structure shown in Fig. 3 (a) is formed in each region surrounded by the grid electrode pattern 21. Yes.
- One surface acoustic wave device is formed in one rectangular region surrounded by the grid electrode pattern 21.
- FIG. 3 (a) only a region where one surface acoustic wave device is formed is illustrated, but a plurality of regions where the surface acoustic wave device is formed are arranged in a matrix. .
- the first electrode pattern 3, 3, 3, 3 and the second electrode pattern 4, 4, 4, 4, and the 1-port SAW A Cu film 14 is formed so as to form an electrode film for forming the resonators 22 to 29 and an electrode pattern 30 for connecting the 1-port SAW resonators 22 to 29.
- the 1-port SAW resonators 22 to 29 finally have the electrode structure shown in FIG. That is, as shown in FIG. 3B, it has an IDT electrode 15 and reflectors 16 and 17 arranged on both sides of the IDT electrode 15 in the surface wave propagation direction.
- Fig. 3 (a) the portion where the 1-port SAW resonators 22 to 29 are provided is the force schematically shown by the symbol with X inserted inside the rectangular frame. Since the illustration of the IDT electrode and the reflector is complicated, it is schematically shown with such a symbol. Actually, as shown in FIG. 3B, the electrode structure of each 1-port SAW resonator 22 to 29 is formed so as to have the IDT electrode 15 and the reflectors 16 and 17. In the present embodiment, 1-port SAW resonators 22 to 29 are provided so as to constitute a ladder filter 18 shown in FIG.
- the electrode structure is formed by the Cu film 14 outside the region where the SiO film 12 is provided.
- the protective film 19 is used to electrically connect to the outside so that the protective film 19 remains on the main part of ⁇ 29, that is, the region where the electrode fingers intersect is covered with the protective film 19
- the protective film 19 is removed so that the Cu film 14 is exposed at the electrode pads and the electrical connection portions.
- FIG. 2 (e) the part indicated by arrow C is thus an electrode electrically connected to the outside.
- the pad portion is shown.
- FIG. 4 is a schematic plan view showing a state in which a part of the protective film 19 is removed as shown in FIG. 2 (e).
- the protective film 19 remains in the region surrounded by the broken line D, and the protective film 19 is removed in the other regions.
- the protective film 19 remains in the main part where the SAW resonators 22 to 29 are formed, and the protective film is removed in the remaining part.
- the third electrode pattern 5 has A1 as a main electrode layer, and is formed by sputtering or vapor deposition in this embodiment.
- the patterning of the third electrode pattern 5 can be performed by a well-known photolithography-etching method.
- the region where the third electrode pattern 5 is formed is shown in a schematic plan view in FIG.
- the third electrode pattern 5 covers the gap between the first and second electrode patterns 3 and 4 shown in FIG. 3 (a) described above, and the first electrode pattern 3
- the second electrode pattern 4 is formed on the second electrode pattern 4.
- one end of the first electrode pattern 3 is connected to the grid electrode pattern 21.
- the first electrode pattern 3 extends from the grid electrode pattern 21 into a rectangular region surrounded by the grid electrode pattern 21, and the inner end 3 a has a gap with the second electrode pattern 4. It is opposed.
- the wafer 31 shown in FIG. 2 (f) and FIG. 5 is obtained.
- metal bumps 32 made of Au or the like are formed on a part of the third electrode pattern 5 on the wafer 31.
- the metal bump 32 is provided to electrically connect the finally obtained surface acoustic wave device to the outside.
- the metal bumps 32 are not necessarily provided.
- the wafer 31 is cut into individual surface acoustic wave device units by dicing. This cutting is performed by cutting along the alternate long and short dash lines El, E2, and F in FIG. In other words, in the middle of the first electrode pattern 3, more specifically, a grid electrode pattern. Are covered with the third electrode pattern 5 and cut at the electrode pattern portion. Accordingly, a part of the first electrode pattern 3 is exposed as shown in FIG. 1 on the side surface obtained by the cutting of the obtained surface acoustic wave device. Even if corrosion progresses from the first electrode pattern 3 exposed on the side surface due to moisture or the like over time, the end 3a of the first electrode pattern 3 is separated from the second electrode pattern 4 with a gap.
- the third electrode pattern 5 is made of a metal film having excellent corrosion resistance, the second electrode pattern 4 does not corrode. Accordingly, it is possible to provide a highly reliable surface acoustic wave device that is unlikely to cause deterioration of characteristics due to corrosion over time.
- the surface acoustic wave device of the embodiment obtained in this way and the third electrode pattern 5 are not formed, and the first and second electrode patterns 3 and 4 are connected without being opposed to each other by a gap.
- a conventional surface acoustic wave device constructed in the same manner as in the above embodiment except that it was integrated and formed of a Cu film was subjected to a moisture resistance test.
- the width direction dimension of the first electrode pattern 3 extending inward from the side surface of the surface acoustic wave device was 10 ⁇ m, and the first electrode pattern 3 was changed to the third electrode pattern.
- the length dimension of the covered portion is 50 ⁇ , and the gap distance between the inner end 3a of the first electrode pattern 3 and the second electrode pattern 4 is 30 / im. .
- the lengthwise dimension of the exposed portion of the first electrode pattern that is, the distance from the side surface of the substrate of the surface acoustic wave device to the portion covered by the third electrode pattern 5 is 70 / m. did.
- the moisture resistance test was performed by leaving the surface acoustic wave device in an environment of 85 ° C. and 85% relative humidity for 100 hours.
- FIG. 7 is a diagram showing the frequency characteristics before and after the moisture resistance test for the conventional surface acoustic wave device obtained as described above.
- the broken line shows the state before the test, and the solid line shows the characteristic after the test. Indicates.
- FIG. 8 shows the frequency characteristics before and after the moisture resistance test of the surface acoustic wave device of the above embodiment.
- the broken line shows the frequency characteristics before the test
- the solid line shows the frequency characteristics after the test.
- FIG. 7 in the conventional surface acoustic wave device, the frequency characteristics in the vicinity of the end portion of the passband side changed after the moisture resistance test, and the passband width was narrowed. This is thought to be due to the deterioration of the characteristics of the parallel arm resonator close to the ground line due to corrosion.
- FIG. 8 it can be seen that the surface acoustic wave device of the above embodiment has almost no change in frequency characteristics before and after the test.
- FIG. 9 is a schematic plan view showing such a modification, and corresponds to FIG. 1 (a).
- the first electrode pattern 3 is formed on one main surface 2a of the substrate 2 from the side surface 2c of the substrate 2 to the inside, and a gap is formed between the inner end 3a of the first electrode pattern 3 and the gap.
- a second electrode pattern 4 is formed at a distance.
- the third electrode pattern 5 is formed so as to cover the gap facing the first and second electrode patterns 3 and 4 and to reach the first and second electrode patterns 3 and 4. Yes.
- the present modification is the same as the first embodiment.
- the second electrode pattern 4 force further has an inner end 4b on the side opposite to the end 4a on the first electrode pattern 3 side.
- the second electrode pattern 4 is opposed to another second electrode pattern 4A across the second gap, and the third electrode pattern 5 is connected to the other electrode pattern 4A. It is formed so as to cover the gap where the second electrode pattern 4 is opposed to the second electrode pattern 4 and also reaches the second electrode pattern 4A.
- the electrode pattern 4A is formed of the same material as the first and second electrode patterns 3 and 4, for example, a Cu film.
- a plurality of second electrode patterns 4, 4A may be arranged inside the first electrode pattern 3 via a plurality of gaps. In this case, even if the corrosion progresses from the first electrode pattern 3 side, the progress of the corrosion toward the inside of the substrate 2 can be more reliably prevented.
- FIGS. 10A and 10B are schematic partial cutaway plan views for explaining still another modification of the electronic component of the first embodiment.
- the gap-side end 3a of the first electrode pattern 3 and the gap-side end 4a of the second electrode pattern 4 are shifted.
- the gap-side end portion 4 a of the second electrode pattern 4 is arranged so as to be shifted from the extension of the first electrode pattern 3.
- the third electrode pattern 5 includes an electrode pattern portion 5a located on the extension of the first electrode pattern 3, and an end of the electrode pattern portion 5a opposite to the first electrode pattern 4.
- a second electrode pattern portion 5b extending in a direction crossing the electrode pattern portion 5a, and a connecting portion between the electrode pattern portions 5a and 5b constitutes a corner portion 5c.
- the third electrode pattern 5 since the third electrode pattern 5 has a shape having the corners 5c, it is possible to more reliably prevent the progress of corrosion due to intrusion of moisture or the like.
- the shape of the third electrode pattern having the corner portion 5c can be variously modified.
- the third electrode pattern 5 has two corners. Some have 5d and 5e. That is, in FIG. 10 (b), the end 3a of the first electrode pattern 3 and the end 4a of the second electrode pattern 4 are opposed to each other.
- the third electrode pattern 5 is connected to the end 4a of the first electrode pattern 4, and the third electrode pattern 5 extends in a direction forming an angle of 90 ° from the extension of the first electrode pattern.
- the first electrode is formed so as to form an angle of 90 ° with the first linear portion 5f and the first linear portion 5f from the corner portion 5d located at the end of the first linear portion 5f.
- the pattern 3 is connected to a second linear portion 5g extending in a direction away from the pattern 3 and a corner 5e provided at the end of the second linear portion 5g, and the second The linear portion 5g and the third linear portion 5h extended to the second electrode pattern 4 side so as to form an angle of 90 °.
- the third linear portion 5 h is connected to the end 4 a of the second electrode pattern 4.
- the third linear portion 5h extends in parallel with the first linear portion 5f and is located on the same side as the first linear portion 5f with respect to the second linear portion 5g. ing. In the case of such a shape, the progress of corrosion due to intrusion of moisture or the like into the gap can be more reliably prevented.
- the third electrode pattern having a crank shape as shown in FIG. 10 (c) As the shape of the third electrode pattern having such a shape that is bent so as to have such a corner portion, the third electrode pattern having a crank shape as shown in FIG. 10 (c) is used. 5 may be used.
- the surface acoustic wave device is shown as an example of the electronic component.
- the first electrode pattern is drawn on the side surface and the first main surface without being limited to the elastic surface wave device.
- Various electronic components having a structure, for example, a boundary acoustic wave device or various electronic components formed by forming an electrode structure similar to that of a surface acoustic wave device at an interface between a semiconductor device, a piezoelectric resonator, and a piezoelectric body and a dielectric.
- the present invention can be applied to.
- the grid electrode pattern 21 is provided.
- the grid electrode pattern may not be provided.
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Abstract
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008513116A JP4655151B2 (ja) | 2006-04-28 | 2007-03-30 | 電子部品及びその製造方法 |
CN2007800012115A CN101356729B (zh) | 2006-04-28 | 2007-03-30 | 电子部件及其制造方法 |
EP07740599A EP2015450A4 (en) | 2006-04-28 | 2007-03-30 | ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME |
US12/100,459 US7541722B2 (en) | 2006-04-28 | 2008-04-10 | Electronic component and manufacturing method thereof |
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US12/100,459 Continuation US7541722B2 (en) | 2006-04-28 | 2008-04-10 | Electronic component and manufacturing method thereof |
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PCT/JP2007/057163 WO2007125724A1 (ja) | 2006-04-28 | 2007-03-30 | 電子部品及びその製造方法 |
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US (1) | US7541722B2 (ja) |
EP (1) | EP2015450A4 (ja) |
JP (1) | JP4655151B2 (ja) |
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Cited By (2)
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JP2012004613A (ja) * | 2010-06-14 | 2012-01-05 | Murata Mfg Co Ltd | 弾性表面波デバイス |
US10622965B2 (en) | 2015-02-03 | 2020-04-14 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device assembly |
Families Citing this family (3)
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JP5501846B2 (ja) * | 2010-05-07 | 2014-05-28 | オリンパス株式会社 | 電子デバイス、ケーブル接続構造および電子デバイスの製造方法 |
JP6402704B2 (ja) * | 2015-11-19 | 2018-10-10 | 株式会社村田製作所 | 弾性波装置、デュプレクサ及びマルチプレクサ |
WO2022164496A1 (en) * | 2021-01-29 | 2022-08-04 | Skyworks Solutions, Inc. | Method of testing acoustic wave devices |
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US10622965B2 (en) | 2015-02-03 | 2020-04-14 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device assembly |
Also Published As
Publication number | Publication date |
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EP2015450A4 (en) | 2012-10-31 |
EP2015450A1 (en) | 2009-01-14 |
CN101356729A (zh) | 2009-01-28 |
CN101356729B (zh) | 2011-02-09 |
US7541722B2 (en) | 2009-06-02 |
US20080179991A1 (en) | 2008-07-31 |
JP4655151B2 (ja) | 2011-03-23 |
JPWO2007125724A1 (ja) | 2009-09-10 |
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