WO2007108313A1 - アークイオンプレーティング方法及びこれに用いられるターゲット - Google Patents
アークイオンプレーティング方法及びこれに用いられるターゲット Download PDFInfo
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- WO2007108313A1 WO2007108313A1 PCT/JP2007/054286 JP2007054286W WO2007108313A1 WO 2007108313 A1 WO2007108313 A1 WO 2007108313A1 JP 2007054286 W JP2007054286 W JP 2007054286W WO 2007108313 A1 WO2007108313 A1 WO 2007108313A1
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- WIPO (PCT)
- Prior art keywords
- target
- longitudinal direction
- ion plating
- longitudinal
- arc ion
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Definitions
- the present invention relates to an arc ion plating method used for forming a hard film on a cutting tool or a machine part (sliding part) in order to improve wear resistance, and a target used in this method.
- Arc ion plating is known as a method for forming a film on a workpiece.
- vacuum arc discharge is performed in a vacuum atmosphere using a target made of a material to be evaporated for film formation as a cathode. This discharge evaporates and ionizes the target material.
- the ionized target material ions are guided to the object to be processed and form a film on the surface.
- a reactive coating that introduces a reactive gas into a vacuum chamber, for example, a target made of Cr is used.
- a CrN film is formed by introducing N gas
- Patent Document 1 discloses an arc ion plating method (vacuum using a cylindrical rod target in which both longitudinal ends are formed thicker than the central side. Arc vapor deposition method) is disclosed.
- This conventional arc ion plating method will be described with reference to FIGS.
- Fig. 7 is a schematic configuration diagram of a conventional apparatus for carrying out the arc plating method
- Fig. 8 is a front view of the rod target in Fig. 7
- Fig. 9 is a front sectional view of the rod target
- Fig. 10 is a rod target. It is a figure for demonstrating this manufacturing method.
- a rod target 52 and a workpiece (workpiece) 53 are arranged in a vacuum chamber 51 in a state where longitudinal centerlines are parallel or substantially parallel to each other.
- the rod target 52 has a cylindrical shape with a step in the middle, and is arranged in a standing posture extending upward and downward in the center of the chamber 51.
- a rotary table 55 is provided below the vacuum chamber 51, and the rotary table 55 is supported so as to be rotatable about a vertical axis that substantially coincides with the axis of the rod target 52.
- a workpiece 53 extending in the vertical direction is placed on the rotary table 55 in a standing posture via a holding member 56, and the workpiece 53 is attached to the rod target 52 as the rotary table 55 rotates. Revolves around the periphery and rotates around the vertical axis with the holding member 56.
- a magnet 54 is provided in the rod target 52 so as to be movable up and down.
- the apparatus includes an arc power source 57 having a positive electrode and a negative electrode.
- the negative electrode is connected to the upper end of the rod target 52, and the positive electrode is connected to the vacuum chamber 51. That is, the rod target 52 is set as a cathode and the vacuum chamber 51 is set as an anode.
- the rod target 52 has both ends in the longitudinal direction thicker than the center side. That is, both ends in the longitudinal direction of the rod target 52 are large diameter portions (thick portions) 521 and 521, and the central portion is a small diameter portion (thin portion) 522.
- the rod target 52 is manufactured using a HIP process in which a powder of a target material is pressed by a HIP (hot isostatic pressing) method. Specifically, as shown in FIG. 10, the rod target 52 includes a step of individually forming the large diameter portions 521 and 521 and the small diameter portion 522 into a simple cylindrical shape using the HIP process. The large-diameter portions 521 and 521 and the small-diameter portion 522 are manufactured by a method including assembling them so as to be integrated.
- the target 52 and the workpiece 53 are arranged with their longitudinal centerlines parallel or substantially parallel to each other, and the target is formed by vacuum arc discharge using the target 52 as a cathode. Material ions are guided to the workpiece 53 and form a film on the surface.
- a target having both ends in the longitudinal direction consisting of large diameter portions 521 and 521 and a central portion which is a small diameter portion 522 is used, and the arc spot position on the target surface is controlled by raising and lowering the magnet 54. .
- This control advances film formation on the workpiece 53 while making the consumption rate of the large diameter portions 521, 521 larger than the consumption rate of the small diameter portion 522. It makes it possible to obtain a uniform film thickness distribution within ⁇ 5%.
- the target consumption rate (target material evaporation) is If it is uniform, a region where a uniform film thickness can be obtained in the workpiece 53 is limited to a range around the center of the workpiece. Therefore, in order to obtain a uniform film thickness over substantially the entire length of the workpiece, it is necessary to increase the consumption rate at both ends of the target.
- both end portions in the longitudinal direction are more than the center portion side corresponding to the distribution of the consumption rate required for obtaining the uniform film thickness as described above.
- a thick rod target 52 is used.
- the rod target 52 having such a shape is less wasteful of the target material, which has higher utilization efficiency than the cylindrical target without a step.
- the conventional arc ion plating method described above has a drawback that the manufacturing efficiency of the rod target 52 is poor. Specifically, the rod target 52 is constrained to a special shape in which both ends in the longitudinal direction are thicker than the center side. This complicates the manufacturing process of the rod target 52. In addition, further target cost reduction is required.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2004-107750 (Figs. 1 to 3, Fig. 9)
- Patent Document 2 Japanese Patent Laid-Open No. 2003-301266 (Fig. 1)
- an object of the present invention is to obtain a uniform film thickness distribution over substantially the entire length of the object to be processed, and to improve the yield of the target material and reduce the manufacturing cost of the target as compared with the prior art. It is an object of the present invention to provide an arc ion plating method and a target for the same.
- consumption of both longitudinal ends of the target is performed.
- the arc spot position on the target surface is controlled so that the speed (the amount of evaporation per unit time) is faster than the consumption speed at the center of the target. This control makes it possible to obtain a uniform film thickness distribution over substantially the entire length of the workpiece.
- the target is arranged such that at least both ends in the longitudinal direction and the other central part can be divided, and the consumption rate is increased as described above.
- the film formation to change is performed.
- only the both ends in the longitudinal direction where the consumption speed is high are replaced until at least the center of the target reaches the consumption limit.
- Such partial replacement allows each of the parts that can be separated from each other to constitute the target to be used up to the wear limit. This makes it possible to improve the yield of the target material by reducing the amount of the target material used with respect to the target effective consumption amount regardless of the shape of the target. This makes it possible to reduce the manufacturing cost and the price of the target and to reduce the cost of the film-formed product.
- FIG. 1 is a schematic configuration diagram showing an arc ion plating apparatus for performing an arc ion plating method according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view for explaining the target in FIG.
- FIG. 3 is a diagram for explaining a target replacement procedure according to the present invention.
- FIG. 4 is a diagram for explaining a target replacement procedure according to the present invention.
- FIG. 5 is a diagram for explaining a target replacement procedure according to the present invention.
- FIG. 6 is a diagram for explaining another example of the target according to the present invention.
- FIG. 7 is a schematic configuration diagram of an apparatus for performing a conventional arc ion plating method.
- FIG. 8 is a front view of the rod target in FIG.
- FIG. 9 is a front sectional view of the rod target.
- FIG. 10 is a diagram for explaining a method of manufacturing a rod target.
- FIG. 1 is a schematic configuration diagram showing an arc ion plating apparatus for performing an arc ion plating method according to an embodiment of the present invention.
- this apparatus includes a vacuum chamber 1, and an object to be processed (work) 2 and a target 3 are arranged in the vacuum chamber 1.
- the target 3 has a cylindrical shape and is disposed in a central portion in the vacuum channel 1 in an upright posture extending in the vertical direction.
- a rotating table 4 for mounting an object to be processed is provided in the lower part of the vacuum chamber 1, and a plurality of objects to be processed (workpieces) 2 are mounted on the rotating table 4.
- each workpiece 2 has a cylindrical shape extending vertically in the vertical direction.
- the workpiece to be treated by the present invention is not limited to a cylindrical one.
- the object to be treated may be a thing in which a large number of small items such as cutting tools are arranged, a rod-like thing, or a plate-like thing.
- the workpiece 2 has a longitudinal dimension that is relatively close to the longitudinal dimension (height dimension) of the target 3, and is relatively long with respect to the target 3 as the turntable 4 rotates. In the state where the direction center line is parallel or almost parallel, the revolution of the rotary table 4 revolves around the target 3 and rotates around the vertical axis.
- a DC noise power source (not shown) for applying a negative bias voltage to the workpiece 2 is connected to the workpiece 2.
- the vacuum chamber 1 is provided with a gas introduction port la for introducing a process gas and a vacuum exhaust port lb communicating with a vacuum exhaust system.
- the apparatus further includes an arc power supply 7 having a cathode and an anode, the cathode is connected to the upper end portion of the target 3, and the anode is connected to the vacuum chamber 1. Therefore, in this apparatus, the target 3 is set as a cathode, and the vacuum chamber 1 is set as an anode having a ground potential.
- An arc ignition mechanism 8 having a trigger pin is connected to the anode side of the arc power source 7 via a resistor, and instantaneous contact between the trigger pin and the outer peripheral surface of the target 3 causes vacuum arc discharge.
- the arc spot (discharge spot) of this vacuum arc discharge circulates on the outer peripheral surface of the target 3.
- this apparatus includes a permanent magnet 5 provided in the target 3 so as to be movable up and down, and a magnet lifting device 6 that lifts and lowers the permanent magnet 5.
- the position of the arc spot on the outer peripheral surface is controlled. This control makes it possible to change the distribution of the consumption rate (evaporation amount per unit time) in the longitudinal direction of the target 3.
- the position control of the arc spot can be performed by means other than the permanent magnet, for example, an electromagnetic coil.
- FIG. 2 is a cross-sectional view for explaining the target in FIG.
- the cylindrical target 3 includes an upper target 31 constituting the upper end portion of the target, and a lower target 32 having the same dimensions as the upper target 31 and constituting the lower end portion of the target. And a central target 33 constituting a central portion disposed between them, and can be divided into three parts, and these parts are interconnected by connecting rings 10 and 10. To be integrated. That is, the upper target 31 and the lower target 32 and the central target 33 are connected to each other so as to be separable.
- an upper flange 11 is attached to the top plate of the vacuum chamber 1 via an annular insulating member 16, and a bottomed hollow shaft 13 extending in the vertical direction is attached to the upper flange 11, Cooling water is introduced into the inside of the bottomed hollow shaft 13.
- a male screw is formed on the outer peripheral surface of the lower end of the bottomed hollow shaft 13, and a target mounting nut 14 is attached to the male screw, and a lower flange 12 is disposed on the nut 14.
- the target 3 integrated by the connecting rings 10 and 10 is fixed to the upper flange 11 by the lower flange 12 and the nut 14 while being fitted to the outside of the bottomed hollow shaft 13.
- the bottomed hollow shaft 13 to which the upper flange 11 is attached serves as both a cooling water supply path for cooling the target 3 and an arc current feeding path.
- the cooling water introduced into the bottomed hollow shaft 13 passes through a hole provided at the lower end of the bottomed hollow shaft 13 and passes through the cooling water drainage channel in the target 3 around the bottomed hollow shaft 13. 15, flows upward in the cooling water discharge passage 15 and is led out from the target 3.
- the permanent magnet 5 (not shown in FIG. 2) shown in FIG. 1 is provided in the cooling water drainage channel 15 of the target 3 so as to be movable up and down.
- the upper flange 11 is connected to a power cable 17 that communicates with the cathode side of the arc power source 7 and flows an arc current.
- the target 3 and the workpiece 2 that are relatively close to each other in the longitudinal direction are placed in the vacuum chamber 1 in a state where the longitudinal centerlines are parallel or substantially parallel to each other. Be placed.
- the target 3 is formed by vacuum arc discharge.
- the target material ions generated by evaporation and ionization are guided to the workpiece 2 to form a film on the surface.
- the arc spot position on the outer peripheral surface of the target is controlled by raising and lowering the permanent magnet 5 along the cooling water drainage channel 15 in the target 3.
- the upper and lower targets Set the consumption rate of 31 and 32 (evaporation per unit time) to a higher rate than the consumption rate of the central target 33 (for example, twice the rate). Formation of a film on the workpiece 2 with such control makes it possible to obtain a uniform film thickness distribution over substantially the entire length of the cylindrical workpiece 2.
- This film formation is performed on a plurality of workpieces 2 per batch.
- N is a specific natural number
- the upper target 31 and the lower target 32 which are faster in consumption than the central target 33, reach the exhaustion limit before the central target 33.
- the one that has reached its wear limit is replaced with an unused one.
- the consumption speed of the upper and lower targets 31, 32 is not limited to twice the consumption speed of the central target 33, and may be another integer multiple such as three times or four times. . Also, the upper and lower targets 31, 32 need not be replaced at the same time. However, appropriate processing conditions (for example, so that the replacement time due to the wear limit of the central target 33 with a slow wear rate overlaps with the replacement time due to the wear limit of the upper and lower targets 31, 32 with the fast wear speed replaced earlier)
- the wear limit (thickness) of each of the upper and lower targets 31, 32 and the central target 33, the length ratio of the upper and lower targets 31, 32 and the central target 33, the upper and lower targets 31 , 32 consumption rate and the central target 33 consumption rate) are adjusted, it becomes easier to manage the target and improve target utilization efficiency.
- FIGS. 3 to 5 are diagrams for explaining the target replacement procedure according to the present invention.
- the target consisting of the upper target 31 'and the lower target 32' that have reached the wear limit by the processing for the N batches and the central target 33 'that has been consumed for the N batches, as shown in FIG.
- the nut 14 is removed from the bottomed hollow shaft 13 by being removed from the bottomed hollow shaft 13. Thereafter, the target is disassembled as shown in FIG.
- unused (new) upper and lower targets 31, 32 are connected to the central target 33 'in place of the upper and lower targets 31', 32 'that have reached the wear limit.
- Target 3 ' including the upper and lower targets 31, 32 in use is newly constructed.
- the target 3 ′ is fixed to the upper flange 11 while being fitted on the outside of the bottomed hollow shaft 13.
- a portion of the upper target 31 near the central target 33 '(a lower end portion of the upper target 31) has the upper target 31 in a connection position between the upper target 31 and the central target 33'.
- a tapered portion is formed so that the diameter and the diameter of the central target 33 ′ are the same. This taper portion is for surely preventing the arc spot from being extinguished due to the difference between the diameters when the arc spot moves between the targets 31, 33 ′, and is not necessarily formed. Is not required.
- a portion of the lower target 32 near the central target 33 ' has the lower target 32 at the connecting position of the lower target 32 and the central target 33'.
- a tapered portion is formed so that the diameter and the diameter of the central target 33 ′ are the same. This tapered portion is also for surely preventing the arc spot from being extinguished due to the difference between the diameters when the arc spot moves between the targets 32 and 33 ′. do not do.
- the film formation is repeated for the same number N batches as the previous time, so that the central target 33 'reaches the wear limit, and at the same time, the upper and lower targets 31 previously replaced (the previous time) are replaced. , 32 also reaches the wear limit.
- the overall target power is updated to an unused new target 3 as shown in Figure 2.
- the replacement frequency of both ends in the longitudinal direction until the entire target is replaced with a new target For example, while the central part is exchanged once, both end parts may be exchanged twice, or may be exchanged three or more times.
- the upper target 31, the lower target 32, and the central target 33 which can be divided into the target 3, can all be used up to the wear limit.
- the amount of target material used is reduced with respect to the target effective consumption and the step of target material.
- the yield can be improved.
- the shape of the target is not particularly limited, for example, by setting the shape of the target so that the cross-sectional shape dimension orthogonal to the longitudinal direction is uniform over the entire length of the target, the manufacturing cost of the target 3 can be reduced. Reduction can be achieved, and the cost of target 3 can be reduced. This effect is particularly remarkable when HIP molding is used in the production of the target 3.
- the target material for the HIP processing Multiple types of capsules with different capsule diameters must be prepared, but the process and equipment are simplified in the production of a target with a uniform diameter throughout the longitudinal direction.
- the central portion (33) of the target may be divided into a plurality of parts as necessary. This division is effective when the target is very long (for example, when the total length of the target is 600 mm or more).
- the position control of the arc spot for changing the wear rate between the longitudinal ends (31, 32) and the central portion (33) of the target is as described above. It is not limited to that based on the position control of the permanent magnet 5.
- the position control of the arc spot can also be executed by other known methods, for example, a method by anode position control or a method by adjusting node current balance.
- the shape of the target used in the arc ion plating method of the present invention when not in use is not particularly limited.
- this shape may be a prismatic shape or a flat plate shape as shown in FIG.
- this target is not limited to the shape of the cross section perpendicular to the longitudinal direction of the target over the entire length of the target. The diameter of both ends is slightly larger than the diameter of the central portion when not in use.
- an arrangement step of arranging a target and an object to be processed in a vacuum chamber, and target material ions are formed by evaporating the target by vacuum arc discharge.
- Forming a film by introducing the target material ions to the object to be processed and forming a film.
- the consumption rate evaporation amount per unit time
- the target The arc spot position on the target surface is controlled so as to be faster than the wear rate at the center of the target. This control makes it possible to obtain a uniform film thickness distribution over substantially the entire length of the workpiece.
- the arc ion plating method of the present invention at least a target that can be divided at both ends in the longitudinal direction and the other central portion is arranged as the target, and the consumption rate is reduced as described above.
- the film formation to change is performed.
- only the both ends in the longitudinal direction where the consumption speed is high are replaced until at least the center of the target reaches the consumption limit.
- Such partial replacement allows each of the parts that can be separated from each other to constitute the target to be used up to the wear limit. This makes it possible to improve the yield of the target material by reducing the amount of the target material used with respect to the target effective consumption amount regardless of the shape of the target. This makes it possible to reduce the manufacturing cost and the price of the target and to reduce the cost of the film-formed product.
- the workpiece and a target having a longitudinal dimension substantially the same as the longitudinal dimension of the workpiece are the longitudinal dimension of the workpiece and the longitudinal dimension of the target. Are opposed to each other in a substantially parallel posture.
- the arrangement step it is more preferable to arrange a target having a cross-sectional shape dimension in a direction orthogonal to the longitudinal direction that is substantially the same over the entire length of the target.
- a target is easy to manufacture and can reduce its cost.
- the both ends in the longitudinal direction and the center portion are used as the both ends in the longitudinal direction.
- a taper taper portion in which the diameters of both end portions in the longitudinal direction at the respective connecting positions and the diameter of the central portion are formed may be connected to the central portion. This taper portion prevents arc extinguishing of the arc spot due to the difference between the diameters at both end portions in the longitudinal direction and the diameter at the central portion at each connection position.
- a splittable target is arranged in three portions, ie, both ends in the longitudinal direction and the central portion, and in the film forming step, the central portion is replaced when the central portion reaches the wear limit.
- Time and both ends in the longitudinal direction already exchanged before the exchange time of this central part It is more preferable to form a film while adjusting the consumption rate at both ends in the longitudinal direction and the consumption rate at the center so that the replacement times at both ends in the longitudinal direction that reach the consumption limit overlap.
- the overlap of the replacement timing of the central portion and the replacement timing of the both ends in the longitudinal direction makes it possible to replace the central portion at the same time as the both ends in the longitudinal direction, thereby facilitating target management. To do.
- the workpiece 2 has a cylindrical shape and has an outer diameter: ⁇ 90 mm and a length L: 500 mm.
- the target 3 of the embodiment has a total length of 700 mm and has a cylindrical shape.
- the upper and lower targets 3 1 and 32 are composed of both ends.
- the target of the comparative example has a cylindrical shape with a total length of 700 mm and has a step, both ends: outer diameter ⁇ 130 mm, inner diameter ⁇ 50 mm, length 150 mm, central portion: outer diameter ⁇ 104.4 mm, inner diameter ⁇ 50 mm , Length 400mm, wear limit force S outer diameter ⁇ 70.
- the lifting speed of the permanent magnet 5 is 5 OmmZs in the 50 mm region at both ends of the stroke. It is set to lOOmmZs in the other central area.
- the consumption speed of the upper and lower targets 31, 32 (both ends in the comparative example) is set to twice the consumption speed of the central target 33 (central part in the comparative example).
- vacuum arc discharge at an arc current of 1000 A was performed while the N gas flow rate was controlled.
- the upper and lower targets 31, 32 reach the wear limit in 108 batches, and this Only the upper and lower targets 31, 32 that have reached the wear limit are replaced with unused ones. Subsequently, the CrN film is formed, and in the next 108 batches, the central target 33 reaches the wear limit, and at the same time, the upper and lower targets 31, 32 exchanged first reach the wear limit. In other words, the entire target 3 reaches the wear limit.
- Table 1 The results are shown in Table 1.
- Target material consumption (a) 6032 11308
- the target material yield compared to the comparative example is less target material usage (a) than the target effective consumption (b). Can be improved.
- the strength of the HIP molding during target production Since the cross-sectional shape perpendicular to the longitudinal direction of the get may be the same over the entire length of the target, the manufacturing cost of the target 3 can be reduced, and the cost of the film-formed product can be reduced.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07737836.2A EP1997932A4 (en) | 2006-03-22 | 2007-03-06 | ARC FLASHING TECHNIQUE AND TARGET USED THEREOF |
CN2007800099617A CN101405428B (zh) | 2006-03-22 | 2007-03-06 | 电弧离子镀方法以及该方法中使用的靶材 |
US12/279,555 US8133365B2 (en) | 2006-03-22 | 2007-03-06 | Method of arc ion plating and target for use therein |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006079255A JP4110175B2 (ja) | 2006-03-22 | 2006-03-22 | アークイオンプレーティング方法 |
JP2006-079255 | 2006-03-22 |
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WO2007108313A1 true WO2007108313A1 (ja) | 2007-09-27 |
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PCT/JP2007/054286 WO2007108313A1 (ja) | 2006-03-22 | 2007-03-06 | アークイオンプレーティング方法及びこれに用いられるターゲット |
Country Status (6)
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US (1) | US8133365B2 (ja) |
EP (1) | EP1997932A4 (ja) |
JP (1) | JP4110175B2 (ja) |
KR (1) | KR101027879B1 (ja) |
CN (1) | CN101405428B (ja) |
WO (1) | WO2007108313A1 (ja) |
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US20100213054A1 (en) * | 2009-02-24 | 2010-08-26 | Industrial Technology Research Institute | Vacuum coating apparatus with mutiple anodes and film coating method using the same |
WO2016185714A1 (ja) * | 2015-05-19 | 2016-11-24 | 株式会社アルバック | マグネトロンスパッタリング装置用の回転式カソードユニット |
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CN101886248B (zh) * | 2009-05-15 | 2013-08-21 | 鸿富锦精密工业(深圳)有限公司 | 溅镀式镀膜装置 |
US20120193227A1 (en) * | 2011-02-02 | 2012-08-02 | Tryon Brian S | Magnet array for a physical vapor deposition system |
US20120193226A1 (en) * | 2011-02-02 | 2012-08-02 | Beers Russell A | Physical vapor deposition system |
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- 2007-03-06 EP EP07737836.2A patent/EP1997932A4/en not_active Withdrawn
- 2007-03-06 KR KR1020087022839A patent/KR101027879B1/ko not_active IP Right Cessation
- 2007-03-06 US US12/279,555 patent/US8133365B2/en not_active Expired - Fee Related
- 2007-03-06 CN CN2007800099617A patent/CN101405428B/zh not_active Expired - Fee Related
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JPS60181268A (ja) * | 1984-02-29 | 1985-09-14 | Hitachi Ltd | スパツタリングタ−ゲツト |
JP2003301266A (ja) | 2002-04-11 | 2003-10-24 | Kobe Steel Ltd | アークイオンプレーティング用ロッド形蒸発源 |
JP2004107750A (ja) | 2002-09-19 | 2004-04-08 | Kobe Steel Ltd | アーク蒸発源用のロッドターゲット、その製造方法及びアーク蒸着装置 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100213054A1 (en) * | 2009-02-24 | 2010-08-26 | Industrial Technology Research Institute | Vacuum coating apparatus with mutiple anodes and film coating method using the same |
US8663441B2 (en) * | 2009-02-24 | 2014-03-04 | Industrial Technology Research Institute | Vacuum coating apparatus with mutiple anodes and film coating method using the same |
WO2016185714A1 (ja) * | 2015-05-19 | 2016-11-24 | 株式会社アルバック | マグネトロンスパッタリング装置用の回転式カソードユニット |
JPWO2016185714A1 (ja) * | 2015-05-19 | 2017-11-02 | 株式会社アルバック | マグネトロンスパッタリング装置用の回転式カソードユニット |
KR20180006977A (ko) * | 2015-05-19 | 2018-01-19 | 가부시키가이샤 알박 | 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛 |
KR102053286B1 (ko) | 2015-05-19 | 2019-12-06 | 가부시키가이샤 알박 | 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛 |
Also Published As
Publication number | Publication date |
---|---|
KR101027879B1 (ko) | 2011-04-07 |
CN101405428A (zh) | 2009-04-08 |
EP1997932A4 (en) | 2016-07-20 |
JP4110175B2 (ja) | 2008-07-02 |
US8133365B2 (en) | 2012-03-13 |
EP1997932A1 (en) | 2008-12-03 |
JP2007254802A (ja) | 2007-10-04 |
KR20080095300A (ko) | 2008-10-28 |
CN101405428B (zh) | 2012-08-01 |
US20090065348A1 (en) | 2009-03-12 |
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