WO2007105261A1 - Method of dry etching of interlayer insulation film - Google Patents

Method of dry etching of interlayer insulation film Download PDF

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Publication number
WO2007105261A1
WO2007105261A1 PCT/JP2006/304625 JP2006304625W WO2007105261A1 WO 2007105261 A1 WO2007105261 A1 WO 2007105261A1 JP 2006304625 W JP2006304625 W JP 2006304625W WO 2007105261 A1 WO2007105261 A1 WO 2007105261A1
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Prior art keywords
gas
etching
insulating film
interlayer insulating
dry etching
Prior art date
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PCT/JP2006/304625
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French (fr)
Japanese (ja)
Inventor
Toshio Hayashi
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Philtech Inc.
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • H01L21/31138Etching organic layers by chemical means by dry-etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31144Etching the insulating layers by chemical or physical means using masks

Abstract

In the microfabrication of hole and trench through dry etching, in a plasma atmosphere, of an interlayer insulation film covered with a resist mask formed by ArF photolithography, as the etching gas, use is made of a halogen (F, I, Br) base gas consisting of a gas of fluorinated carbon compound wherein at least one of I and Br is contained in an amount, in terms of atomic composition ratio, of 26% or less based on the total amount of halogens and the rest consists of F. As a result, the occurrence of striation is suppressed and high etching processing accuracy can be attained.

Description

Specification

The dry etching method of the interlayer insulating film

Technical field

[0001] The present invention, an interlayer insulating film to a method of dry etching, in particular, to micromachined holes, trenches and Doraietsuchin grayed the covered interlayer insulating film by forming resist masks using ArF photolithography Dara Fi method bACKGROUND relates a dry etching method of the interlayer insulating film

In recent years, with the high integration spoon and fast I spoon of LSI, a finer and multilayered semiconductor element is Proceed. The photolithographic method of this case, as represented by ArF photolithography, shorter laser wavelengths (e.g., an excimer laser) which was used is utilized, the fine pattern - the resist mask is formed with a ring that. Such resist mask covered with the interlayer insulating film is dry-etched, holes for wiring, in the case of micromachining, etc. trench is high processing accuracy of obtaining a uniform etching shape in the depth direction is required ing. In this case, in order to enhance the anisotropy, it is known that etching is performed by introducing a predetermined etching gas in a plasma atmosphere (Patent Document 1).

[0003] Incidentally, as a resist material used in the ArF photolithography, per cent in the vacuum ultraviolet light region, in order to impart sensitivity Te, Do have a benzene ring, proposed to use those composed of I 匕合 product are (non-patent document 1). In this type of resist material, when a fine pattern Jung using short lasers wavelength, both when the resist mask is weakened along with it, the plasma resistance as compared with those used in other photolithography It is low.

[0004] Therefore, when the etching in a plasma atmosphere, undergo Dame di by being exposed to the plasma, rough edges in the edge portion of the putter Jung areas of the resist mask is generated (the shape of the resist mask There is deformed). Continuing etching in this state, holes its shape and you'll formed in the interlayer insulating film, it is transferred to the trenches Sutorieshi Yung (striation) is disadvantageously generated. In this case, Do can meet the requirements of high etching mosquito 卩E accuracy. [0005] In order to solve such a problem, a mixed gas containing a fluorocarbon gas, resist the mixed gas is introduced at a low pressure plasma atmosphere to form Te V, use the ArF photolithography an interlayer insulating film covered by the mask has been proposed to dry etching Ru (Patent Document 2).

Patent Document 1: JP-A 11 31 678 discloses (for example, claims wherein reference of) Patent Document 2: Japanese Patent Application 2004- 56962 No. (see, e.g., the appended claims) Non-Patent Document l: Koji Nozaki and Ei Yano, FUJITSU Sei.Tech. J., 38,1 P3- 12 (June 200

2)

Disclosure of the Invention

Problems that the Invention is to you'll solve

While [0006] and Kaka, although if dry etching by introducing a predetermined gas mixture at low pressure Sutorie one Chillon high etching mosquito 卩E accuracy occurrence can be suppressed in the resulting, if a predetermined pressure (eg 0. etching device capable of obtaining a stable discharge pressure lower than 133 Pa) is limited constant, poor versatility.

[0007] Accordingly, an object of the present invention has been made in view of the above point, Ru near to provide a dry etching method for striation interlayer insulating film suppressed to high E Tsuchingu machining accuracy can be obtained the occurrence of.

Means for Solving the Problems

[0008] In order to solve the above problem, a dry etching method of the interlayer insulating film of the present invention, an interlayer insulating film covered by forming resist masks using ArF photolithography, introducing a predetermined etching gas while, Hall is dry etched in a plasma atmosphere, the dry etching method of the interlayer insulating film for microfabrication trenches, as the Etsu Chingugasu, halogen gas (Nono androgenic is, F, I, Br) a, least also one of I and Br is in the following 26% of the total amount of halogen in atomic composition ratio, which comprises using the remainder is F fluorocarbon compound gas.

[0009] According to the present invention, as an etching gas, using the full Tsu carbon compound gas containing at least one of I and Br having a function as Etsuchanto to itself Si to form a stable compound, It reduces the F atom number density in Kotonagupu plasma atmosphere which depends on the operating pressure during the etching, to reduce the damaging the resist mask, it is possible to suppress the occurrence of striation. In this case, at least hand I and Br, when containing more than 26% of the total amount of halogen in atomic composition ratio, there are problems such as can not be etched in the reduction and the desired shape of the etching speed .

[0010] The fluorocarbon compound gas is a gas iodinated fluorocarbon compounds and brominated Futsui spoon carbon compound gas, whereas either displaced or preferred to be a mixture of these gases.

[0011] In this case, the iodinated fluorocarbon compound gas, CF I

3, CFI

2 5, CFI

3 7, at least one selected from 3 6 2 of CFI or the Yo if the iodinated fluorocarbon compound gas and HI young properly mixed gas containing two or more kinds selected from the HBr,,.

[0012] In addition, the brominated fluorocarbon compound gas, CF Br Br rr

3, CF

2 5, CFB

3 7, CFB

3 6 at least one selected from among 2 or the brominated fluorocarbon compound gas and HI young properly is Yo if mixed gas containing two or more kinds selected from the HBr,,.

[0013] Incidentally, the etching gas may be a mixed gas of CF and CFI or CF Br.

4 2 4 2 2 4 2

[0014] The etching gas used herein may be a mixed-gas and at least one and perfluorocarbon compounds of HI and HBr.

[0015] The etching gas used herein may be a mixed gas of CF I and perfluorocarbon compounds.

3

[0016] The etching gas used herein may be a mixed gas of CF Br and perfluorocarbon compounds.

3

[0017] Here, by adjusting the amount of deposition of the reaction product from the etching hole has been etched, in order to prevent the filled trench, said etching gas, the total flow rate of the etching gas oxygen it is sufficient to 添Ka 卩 3 to 15 percent range. In this case, it is less than 3%, it is impossible to achieve the effect, also, it is impossible to adjust the amount of deposition. On the other hand, when it exceeds 15%, it is etched ArF resist is damaged. Effect of the invention

[0018] As described above, the dry etching method of the interlayer insulating film of the present invention, high to suppress the occurrence of Sutorie one Chillon, if the etching accuracy can be obtained?, Exhibits the cormorants effect. BEST MODE FOR CARRYING OUT THE INVENTION

1. Referring to [0019] 1, 1, an interlayer insulating film of the present invention is dry-etched, holes for wiring, an etching apparatus for microfabrication and a trench. Etching apparatus 1 is for use discharge plasma generated in the region including the zero magnetic field (NLD plasma) has a chamber 11 provided with evacuating means 1 2, such as a dry pump or a rotary pump or a turbo molecular pump.

[0020] chamber 11 is constituted by the upper portion of the plasma generating chamber 11a and a lower substrate processing chamber l ib formed by a dielectric made of cylindrical side wall 13 as quartz. The outer cylindrical side wall 13, three magnetic field coils 14, 15, 16 are provided at predetermined intervals to form a magnetic field generating means. Three magnetic field coil 14, 15, 16 is attached to Uni high magnetic permeability material made of the yoke member 17 by surrounding the outer upper and lower. In this case, each field coil 14, 16 of upper and lower, flows in the same direction of the current, the intermediate coil 15 so that flow reverse current. Thus, in the vicinity of the level of the middle of the coil 15 to the inside of the cylindrical side wall 13 can position consecutive zero magnetic field, an annular magnetic neutral line is formed.

[0021] The size of the annular magnetic neutral line can be set appropriately by changing the ratio of the current flowing through the current and the intermediate coil 15 to flow to the coils 14, 16 of upper and lower, annular magnetic neutral line position in the vertical direction can be appropriately set by the ratio of the current flowing through the respective field coils 14, 16 of upper and lower. Also, when gradually increasing the current flowing in the middle of the coil 15, the diameter of the annular magnetic neutral line is smaller, Yuku also slowed gradient of the magnetic field at the same time the magnetic field zero position. Between the middle of the coil 15 and the cylindrical side wall 13, an antenna 18 is provided for a high frequency electric field generated, is connected to a high-frequency power source 19 constitute a magnetic field generating means. Then, to generate the NLD plasma along the three field coils 1 4, 15, an annular magnetic neutral line formed by the 16

[0022] The by surface opposite to make the annular magnetic neutral line substrate processing chamber l ib, a circular cross section of the substrate electrode 20 substrate S is a substrate mounting portion to be mounted is via an insulator 20a It is provided Te. The substrate electrode 20 is connected to the second high frequency power source 22 via a condenser 21, a negative Noiasu potential becomes the potential floating electrode.

[0023] In addition, the top plate 23 partitioning the plasma generating chamber 11a is sealed secured to the upper portion of the cylindrical side wall, forming the counter electrode and the potential floating state. The inner surface of the top plate, the gas introducing means 24 is provided for introducing an etching gas into the chamber 11, the gas introducing means 24 is connected to a gas source via a gas flow rate control means (not shown) Ru.

[0024] by using the etching apparatus 1, hall for wiring, the interlayer insulating film where the trench is micromachined, acid it 匕物 film such as SiO, by spin coating as HSQ or MSQ

2

SiOCH-based material formed, some!, Is a low- k material SiOC material dielectric constant 1.5 to 3.0 of which is formed by CVD, including a porous material.

[0025] Examples of the SiOCH-based materials, for example, trade name NCSZ catalyst I 匕成 Industrial Co., Ltd., trade name LKD 5109r5ZjSR Co., Ltd., trade name HSG- 7000 / Hitachi Chemical Co., Ltd., trade name HOSP / Honeyw ell Electric Materials Send quotient f outlet name Nanoglassz Honeywell Electric Materials Co., Ltd. under the trade name OCD T-12Z Tokyo Ohka Kogyo Co., Ltd., product name OCD T-32Z Tokyo Ohka Kogyo Co., Ltd., trade name IPS2. 4Z catalysts & Chemicals Industries Co., Ltd., trade name IPS2. 2Z catalyst Chemical industry Co., Ltd., trade name ALC AP- S5100Z manufactured by Asahi Kasei Corporation, there is a trade name ISMZULVAC Co., Ltd. and the like.

[0026] Examples of the SiOC-based material, for example, trade name Aurola2. 7 / ASM Japan Co., Ltd., trade name Aurol a2. 4Z ASM Japan Co., Ltd., trade name Orion2. 7ZTRIKON Co., Ltd., trade name CoralZNovellf Co., Ltd., trade name Black there is DiamondZAMAT Co., Ltd. and the like. In addition, organic such as product name SiLKZDow Chem ical Co., Ltd., trade name Porous- SiLKZDow Chemical Co., Ltd., trade name FLAREZHoneywell Ele ctric Materials Co., Ltd., trade name Porous FLAREZHoneywell Electric Materials Co., Ltd., trade name GX-3PZHoneywell Electric Materials Co., Ltd., etc. it may be a low-dielectric-constant interlayer insulation film systems.

[0027] On the interlayer insulating film, holes for wiring in the interlayer insulating film, for the trench micromachining using photolithography, a resist mask is formed with a predetermined pattern Jung. The photolithography method, miniaturization of a semiconductor device with high integration and high speed of LSI and multilayered and the corresponding surgical instrument ArF photolithography is used. As the resist material for ArF photolithography, for example, there is a vacuum ultraviolet light UV- 6ZShiple y Corporation.

[0028] Meanwhile, as the resist material used in the ArF photolithography, contact the vacuum ultraviolet light region, in order to impart sensitivity Te, Do have a benzene ring, there Ru when constituting a compound. This type of resist material, when a fine pattern Jung using short laser wavelength, the resist mask is weakened along with it, the plasma resistance as compared with shall be used in other photolithography low.

[0029] Here, the dry etching method of the conventional interlayer insulating film, i.e., for example using the etching apparatus of an induction coupling type (I CP Plasma) (not shown), under operating pressure L~3Pa, fluorosilicone carbon gas when an etching gas containing (CxFy) performs Etsu quenching is introduced in a plasma atmosphere (Ar plasma density in this case it is ~ IX lOUcnT 3.), as shown in FIG. 2, is exposed to the plasma damaged by, putter of the resist mask 31 - edge roughness 33 on the edge portion 32 of the ring region is generated (the shape of the resist mask 31 is deformation). When such an etching state «to continue, a hole whose shape is to shape formed in the interlayer insulating film 34, striation 36 occurs is transferred to the trench 35, meet the requirements of high Etsu Chindaka 卩E accuracy Do can! /,.

[0030] occurrence of striation 36 described above, generally, has been recognized as damaged by ions during etching in a plasma atmosphere. Based on this recognition, when performing Etsuchin grayed interlayer insulating film above NLD plasma etching apparatus 1 is a low pressure high density plasma are also contemplated as striation occurs for the following reasons.

[0031] That is, in the etching apparatus 1 of the NLD plasma, usually, the etching condition is 0. 3 to 0. 7 Pa under operating pressure at the output of the high frequency power source 19 connected to the antenna 18 is 1 to 1. 5KW, the output of the second high frequency power supply 22 (bias power) is set to 0. 2 to 0. 6KW, an Ar plasma density is ~ 1 X ΙΟ ^ π 3 at this time. In this case, since the set lower than conventional methods operating pressure, the force etching apparatus 1 plasma density decreases, to become a good annular magnetic neutral line discharge plasma efficiency, decrease of plasma density low.

[0032] Therefore, the ion current density in the etching apparatus 1, is almost identical to that of the etching apparatus of an ICP plasma which can not suppression of the occurrence of the striation also the output of the second high frequency power supply 22 0. 3KW ion energy of setting in, ~ in: has become LKeV, collision of the high energy ions to the resist mask 31 is going. Therefore, when performing etching of the interlayer insulating film with an etching apparatus 1 of NL D plasma, it is believed Sutorieshi Yung occurs.

[0033] Incidentally, even in the case of using an etching apparatus of an ICP plasma, by setting a low operation pressure to a predetermined value, that have been found a phenomenon that occurs in the striation can be suppressed. This is because by setting a low operation pressure, caused by the physical quantity of the neutral degradation species (atoms, molecules, radicals) is reduced. In this case, F is the degradation species generated by decomposing the CxFy gas, CF, CF, there are CF etc., molecular radicals in this mainly as polymer precursor

twenty three

Although the work is, it serves as an etching agent for the resist mask 31 is low. Therefore, high reactivity F atoms with organic material reacts with C = 0 group or other functional groups of the resist mask 31, thereby further weakening the resist mask 31. Thus, weakening of the resist mask 31 by connexion occur radical reaction occurs.

[0034] On the other hand, in the dry etching of porous low- k film, the CFI as the etching gas

3 7 used, under the etching conditions of low pressure and high density plasma etch ing rate of the resist mask has been found a phenomenon that improves selectivity to the resist decreases. The etch rate of Rejisutoma disk is decreased, F radical is Etsuchanto resist mask reacts with I in the gas phase, in order to form IF, IF, the IF and the like.

3 5 7

[0035] In view of what has been described above, using the etching apparatus of an ICP plasma, the occurrence of striation of the resist mask by setting a low operation pressure can be suppressed, the resist among radio Cal species Etsuchanto because of the reduction of F atom density is. When using a gas containing iodine atom, etch ing rate of the resist is lowered happening Nji base sukiya of F atoms. For these reasons, in order to suppress the occurrence of striation it is important that the F atom number density is reduced in the captured stable compounds I or other methods.

[0036] In view of the above point, a stable form of the compound by reaction with F atom, and E as compounds that do not significantly affect the etching Organization itself, H, Br, I, those containing Xe it may be utilized as Tsuchingugasu. Here, H is, in co to form a F a fast reaction and HF, it is difficult to control because it reacts with the organic compound. Further, Xe forms a F and Ekisaite Ddotaima, its bonding force is also Jakugu, of little practical use because it is expensive. Against Re their, Br or I is, IF, IF, IF B, BrF, for forming a stable compound such as BrF

3 5 7 3 5

In, it has a function as Etsuchanto against itself Si, there is no function of inhibiting itself the etching reaction.

[0037] Accordingly, in the present embodiment, as the etching gas, a halogen-based gas (Nono androgenic is F, I, Br) a, of the total amount of halogen in at least one force atomic yarn 且成 ratio of I and Br 26% or less, the remaining carbon fluoride compound gas is F, in particular, whereas if ヽ displacement of iodinated fluorocarbon compound gas and brominated fluorocarbon compound gas, or the use of these mixed gases.

[0038] iodinated fluorocarbon compound gas and brominated fluorocarbon compound gas, C (Hal) n 2n + 2

(Where, n = l~3) of gas, preferably, CF I, CF Br ゝ CFI, CF Br ゝ CFI, CF

3 3 2 5 2 5 3 7 3 7

Br, CFI, at least one Churyoku selected the CF Br, or their fluorocarbon

3 6 2 3 6 2

It is preferred from the compound gas and the HI or Br is a mixed gas containing two or more selected. Incidentally, the number of n is greater than 3, trouble occurs such that the chamber one 11 is contaminated during etching is not practical.

[0039] In addition, bromination, such as iodinated fluorocarbon compound gas and CF Br such as CFI Futsui spoon

2 4 2 2 4 2

Carbon compound gas can also be used, in this case, so that the following 26% of the total amount of halogen in atomic composition ratio, is used by adding such as CF gas.

Four

[0040] The mixing of the etching gas, at least one of HI and HBr, perfluorocarbon compounds such as tetra full O b ethylene (C (Hal) (wherein, n = l~3)) and gas a gas n 2n

As Moyogu etching gas, a mixed gas of CF I and perfluorocarbon compound, peroxide and CF Br

Yo, it is used 3 3 mixed gas of fluorocarbon compound.

[0041] Thus, by reducing the F number density of atoms in Kotonagu plasma atmosphere which depends on the pressure during the etching of the chamber 11, to reduce the damaging the resist mask, generation of the scan Torieshiyon can be suppressed . In this case, at least one of I and Br, when containing more than 26% of the total amount of halogen in atomic composition ratio, there are problems such as can not be etched in the reduction and the desired shape of the etch rate.

[0042] The aforementioned fluorocarbon compound gas, by adjusting the amount of Depojisho down of the reaction product by etching etched holes, in order to prevent the buried trench, adding a small amount of oxygen it is preferable.

[0043] In this case, oxygen 添Ka 卩量 3 to 15% of the total flow rate of gas introduced into the chamber 11, good Mashiku is 3-10%, more preferably set in a range of 4% to 7% that. In less than 3%, it is impossible to achieve the above effects, also, it is impossible to adjust the amount of deposition. In other person, exceeds 15%, are etched ArF resist is damaged. Example 1

[0044] In Example 1, using SiO as an interlayer insulating film, processed using a spin coater substrate

2

Above, it was formed to have a thickness of LOOOnm. Then, the interlayer insulating film, a resist material is applied by a spin coater to form a resist mask by performing a predetermined pattern Jung in ArF photolithography. In this case, as the resist material, use of a vacuum ultraviolet UV-6, and a thickness of 500 nm.

[0045] Next, using the etching apparatus 1 of the NLD plasma shown in FIG. 1, and Ar, with a CFI is an etching gas, which 2. introduced into the vacuum chamber 11 under a working pressure of 67Pa

3 7

To form a hole by etching the interlayer insulating film. In this case, set 230scc the flow rate of Ar m, 50 sccm flow rate of CFI, oxygen flow rate 20 sccm. In addition, the plasma generation

3 7

1KW output of the high frequency power source 19 connected to use the high-frequency antenna coil 18, outputs 0. 3KW high frequency power supply 22 connected to the substrate electrode 21 was set in the substrate set temperature 10 ° C. (Comparative Example 1)

[0046] In Comparative Example 1, as well as the shape formed the interlayer insulating film and the resist mask under the same conditions as in Example 1, using the NLD etching apparatus 1 shown in FIG. 1, the interlayer under the same conditions as in Example 1 an insulating film was etched. CF In this case, as an etching gas, in place of CFI

3 7 3 8 was used.

[0047] FIGS. 3 and 4 are SEM photographs of etching the interlayer insulating film under the conditions of Example 1 and Comparative Example 1. According to this, that of Comparative Example 1, rough edge to the edge portion of the putter Jung areas of the resist mask by etching occurs, string Eshiyon the hole is confirmed to be generated (FIG. 4 ( b) and (c). in contrast, in example 1, rough edge at the edge portion is suppressed, occurrence of striation is seen Rukoto been suppressed ((see FIG. 3 (b) and (c) reference).

[0048] In addition, to form the interlayer insulating film and the resist mask under the same conditions as in Example 1, by using the etching apparatus 1 shown in FIG. 1, and Etsu quenching the interlayer insulating film under the same conditions as in Example 1 but the pressure in the chamber 11 was set to 0. 67 Pa. In this case, the etching rate is slightly faster, occurrence of striation could be suppressed. Further, instead of I, the same results using the Br was obtained.

[0049] Incidentally, in NLD etching apparatus, a weak magnetic field can be applied, although it is possible to form a good ヽ NLD plasma efficiency below LPA, mean free is shortened electrons in the above LPA, the NLD plasma Narazu, so ICP plasma is formed. Therefore, the upper Symbol Example 1, since a force lPa than those using the NLD etching apparatus 1, the effect of the magnetic field the same plasma is formed with the zero magnetic field disappears. Therefore, the same as that form the shape of the ICP plasma, the effect of the present invention should not depend on the etching apparatus structure depends on the name instrument plasma density and gas composition. As a result, 10 1G ~ as plasma density: LO ^ plasma c m_ 3 is formed, if the interlayer insulating film covered by ArF resist mask, the same effect can be obtained is principally apparent.

BRIEF DESCRIPTION OF THE DRAWINGS

[0050] FIG schematically showing an etching apparatus for carrying out the etching method of the interlayer insulating film of the present invention.

[Figure 2] schematically illustrated figures the occurrence of striation.

[FIG 3] (a) to (c) are, SEM photographs of etching the interlayer insulating film according to Example 1.

[FIG. 4] (a) to (c) are, SEM photographs of etching the interlayer insulating film in Comparative Example 1. DESCRIPTION OF SYMBOLS

[0051] 1 etching apparatus

11 chamber

11a plasma generation chamber

l ib substrate electrode chamber

31 Regis Bok mask

32 edge

33 edge roughness

34 an interlayer insulating film

35 Honore, trench

36 striation

S processing board

Claims

The scope of the claims
[1] An interlayer insulating film covered by forming resist masks using ArF photolithography, while introducing a predetermined etching gas holes by dry etching in a plasma atmosphere, an interlayer insulating film for microfabrication trench of the dry etching method, as the etching gas, a halogen-based gas (Nono androgenic is, F, I, Br) a, the following 26% of the total amount of silver in the other hand the force atomic composition ratio even without less of I and Br dry etching method of the interlayer insulating film, which comprises using the remainder is F Futsui spoon carbon compound gas.
[2] The fluorocarbon compound gas is iodinated fluorocarbon compound gas and a bromine fluoride carbonitride-containing compound gas, the deviation or the other, or the interlayer insulating film according to claim 1, wherein the mixtures of these gases the method of dry etching.
[3] The iodinated fluorocarbon compound gas is selected CF I, CFI, CFI, from the CFI
3 2 5 3 7 3 6 2
At least one or de dry etching method of the interlayer insulating film according to claim 2, wherein iodinated fluorocarbon compound gas and a HI or HBr and force is also mixed gas containing two or more selected, that is.
[4] The brominated fluorocarbon compound gas, CF Br, CF Br, CF Br, among CF Br
3 2 5 3 7 3 6 2 selected at least one or claims, characterized in that a mixed gas containing two or more selected from said brominated fluorocarbon compound gas and a HI or H Br, dry etching method 2 SL placing the interlayer insulating film.
[5] The etching gas, and characterized in that a mixed gas of CF and CFI or CF Br
4 2 4 2 2 4 2
Claim 1 or claim 2 dry etching process of the interlayer insulating film according to.
[6] The etching gas, the dry etching of the interlayer insulating film according to any one of claims 1 to 4, characterized in that a mixed gas of at least one of a perfluorocarbon compound of HI and HBr Method.
[7] The etching gas, and characterized in that a mixed gas of CF I and perfluorocarbon compounds
3
The dry etching method of the interlayer insulating film according to any one of claims 1 to 4
[8] The etching gas, characterized in that a mixed gas of CF Br and perfluorocarbon compounds
3
Dry etching how the interlayer insulating film according to any one of claims 1 to 4,.
[9] in the etching gas, the interlayer insulating film according to any one of claims 1 to 8, characterized in that the addition of oxygen in the range from 3 to 15% of the total flow rate of the etching gas dry etching method.
PCT/JP2006/304625 2006-03-09 2006-03-09 Method of dry etching of interlayer insulation film WO2007105261A1 (en)

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WO2009088660A1 (en) * 2008-01-04 2009-07-16 Micron Tecnology, Inc. Method of etching a high aspect ratio contact
CN102254813A (en) * 2008-02-12 2011-11-23 东京毅力科创株式会社 Plasma etching method

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JPS61123142A (en) * 1984-11-20 1986-06-11 Matsushita Electric Ind Co Ltd Dry etching method
JPH11340211A (en) * 1998-03-27 1999-12-10 Nec Corp Treatment method and apparatus for substrate
JP2003051495A (en) * 2001-06-28 2003-02-21 Hynix Semiconductor Inc Forming method for contact hole of semiconductor element
JP2006032721A (en) * 2004-07-16 2006-02-02 Matsushita Electric Ind Co Ltd Fabrication process of semiconductor device

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JPH11340211A (en) * 1998-03-27 1999-12-10 Nec Corp Treatment method and apparatus for substrate
JP2003051495A (en) * 2001-06-28 2003-02-21 Hynix Semiconductor Inc Forming method for contact hole of semiconductor element
JP2006032721A (en) * 2004-07-16 2006-02-02 Matsushita Electric Ind Co Ltd Fabrication process of semiconductor device

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Publication number Priority date Publication date Assignee Title
WO2009088660A1 (en) * 2008-01-04 2009-07-16 Micron Tecnology, Inc. Method of etching a high aspect ratio contact
GB2468458A (en) * 2008-01-04 2010-09-08 Micron Technologies Inc Method of etching a high aspect ratio contact
GB2468458B (en) * 2008-01-04 2013-02-20 Micron Technologies Inc Method of etching a high aspect ratio contact
US8614151B2 (en) 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
US20140077126A1 (en) * 2008-01-04 2014-03-20 Micron Technology, Inc. Method of etching a high aspect ratio contact
CN102254813A (en) * 2008-02-12 2011-11-23 东京毅力科创株式会社 Plasma etching method

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