WO2007091834A1 - High-pressure fluidized bed reactor for preparing granular polycrystalline silicon - Google Patents
High-pressure fluidized bed reactor for preparing granular polycrystalline silicon Download PDFInfo
- Publication number
- WO2007091834A1 WO2007091834A1 PCT/KR2007/000657 KR2007000657W WO2007091834A1 WO 2007091834 A1 WO2007091834 A1 WO 2007091834A1 KR 2007000657 W KR2007000657 W KR 2007000657W WO 2007091834 A1 WO2007091834 A1 WO 2007091834A1
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- WO
- WIPO (PCT)
- Prior art keywords
- pressure
- reactor
- controlling means
- zone
- gas
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/06—Roasters; Grills; Sandwich grills
- A47J37/067—Horizontally disposed broiling griddles
- A47J37/0682—Horizontally disposed broiling griddles gas-heated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/04—Pressure vessels, e.g. autoclaves
- B01J3/046—Pressure-balanced vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1818—Feeding of the fluidising gas
- B01J8/1827—Feeding of the fluidising gas the fluidising gas being a reactant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1836—Heating and cooling the reactor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/06—Roasters; Grills; Sandwich grills
- A47J37/07—Roasting devices for outdoor use; Barbecues
- A47J37/0786—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00389—Controlling the temperature using electric heating or cooling elements
- B01J2208/00398—Controlling the temperature using electric heating or cooling elements inside the reactor bed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00389—Controlling the temperature using electric heating or cooling elements
- B01J2208/00407—Controlling the temperature using electric heating or cooling elements outside the reactor bed
Definitions
- the present invention relates to a high-pressure fluidized bed reactor for
- high-purity polycrystalline silicon is used as a basic material for
- the polycrystalline silicon is
- a fluidized bed of silicon particles is formed by the upward flow of gas and the size
- the fluidized bed reactor also uses
- silane compound of Si-H-Cl system such as monosilane (SiH 4 ), dichlorosilane
- SiHaCl 2 trichlorosilane
- SiHCIs silicon tetrachloride
- SiCU silicon tetrachloride
- silicon atom-containing reaction gas which usually further comprises hydrogen
- reaction temperature i.e., temperature of the
- the temperature should be about
- reactor provides a granular polycrystalline silicon product.
- the seed crystals may be prepared or generated in situ in the fluidized bed itself, or supplied into the reactor
- polycrystalline silicon product may be withrawn from the lower part of the reactor
- processing for the following-up processes such as single crystal growth, crystal block
- the reactor wall is weak in physical stability because it is always in
- U.S. patent no. 5,165,908 discloses a reactor system where an
- electric resistance heater encloses a reactor tube made of quartz, both of which are
- U.S. patent no. 5,810,934 discloses a fluidized bed reactor for manufacture of
- 0 polycrystalline silicon comprising a reactor vessel, i.e., the reactor tube defining a reactor vessel, i.e., the reactor tube defining a reactor vessel, i.e., the reactor tube defining a reactor vessel, i.e., the reactor tube defining a reactor vessel, i.e., the reactor tube defining a reactor vessel, i.e., the reactor tube defining a reactor vessel, i.e., the reactor tube defining a
- a shroud i.,e., a protection tube surrounding the reactor tube; a heater
- silicon may have a different structure depending on the heating method.
- U.S. patent no. 4,786,477 discloses a method of heating silicon
- cylindrical reactor tube is hold vertically by a metallic reactor shell.
- an outlet means comprising a silicon particle outlet means and a gas
- outlet means for discharging polycrystalline silicon particles and off-gas
- Figures 1 and 2 are cross-sectional views of the high-pressure fluidized bed
- An inner space of the fluidized bed reactor here is separated from an outer
- reactor tube 2 partitions the inner space into an inner zone 4, where a silicon particle
- particle bed is not formed and silicon deposition does not occur.
- the reactor shell 1 is preferred to be made of a metallic material with reliable
- the reactor shell 1 may be divided into a plurality of components such
- the components may have
- each component may be coated with a protective layer
- a protective tube or wall which may be made of a metallic
- a cooling medium such as water, oil, gas and air for protecting the equipment
- cooled are preferred to be designed to comprise a coolant-circulating means at their
- the reactor shell 1 may comprise an
- the reactor tube 2 may be of any shape only if it can be hold by the reactor
- the reactor tube 2 may be of a structure of a
- ellipsoid and either one end or both ends of the reactor tube 2 may be formed into a
- the reactor tube 2 may comprise a plurality of components
- the reactor tube 2 is preferred to be made of an inorganic material, which is stable at a relatively high temperature, such as quartz, silica, silicon nitride, boron
- nitride silicon carbide, graphite, silicon, glassy carbon or their combination.
- a carbon-containing material such as silicon carbide, graphite,
- glassy carbon may generate carbon impurity and contaminate the polycrystalline
- the reactor tube 2 is made of a carbon-containing material
- the inner wall of the reactor tube 2 is preferred to be coated or lined with materials
- the reactor tube 2 may be any suitable material such as silicon, silica, quartz or silicon nitride. Then, the reactor tube 2 may be
- the reactor tube 2 is of one-layered or
- each layer of which is made of a
- Sealing means 41a, 41b may be used for the reactor shell 1 to safely hold the
- the sealing means are preferred to be stable at a temperature of
- above 200 °C and may be selected from organic polymer, graphite, silica, ceramic,
- the sealing means 41a, 41b may be installed less
- the partition of the inner space of the reactor shell 1 by the reactor tube 2 may
- a heating means 8a, 8b may be installed in the reactor shell 1
- One or a plurality of heating means 8a, 8b may be installed in the inner zone 4 and/ or the outer zone 5 in various manner.
- a heating means 8a, 8b may be installed in the inner zone 4 and/ or the outer zone 5 in various manner.
- a plurality of heating means 8a, 8b may be installed in the inner zone 4 and/ or the outer zone 5 in various manner.
- a heating means 8a, 8b may be installed in the inner zone 4 and/ or the outer zone 5 in various manner. For example, a
- heating means may be installed only in the inner zone 4 or in the outer zone 5 as
- the electric energy is supplied to the heating means 8a, 8b through an electric
- the reactor and an electric source E outside the reactor may comprise a metallic
- a component in the form of a cable, a bar, a rod, a shaped body, a socket or a coupler in the form of a cable, a bar, a rod, a shaped body, a socket or a coupler.
- the electric energy supplying means 9a-9f may comprise an electrode that
- ⁇ is made of a material such as graphite, ceramic (e.g., silicon carbide), metal or a
- energy supplying means can be prepared by extending a part of the heating means
- a gas inlet means should be installed at the fluidized bed reactor
- silicon particles can move by gas flow, within the reactor tube 2, i.e., in a lower part of the inner zone 4, for preparation of
- the gas inlet means comprises a fluidizing gas inlet means 14, 14' for
- a fluidizing gas 10 refers to a gas introduced to cause some
- HCl hydrogen chloride
- SiC14 silicon tetrachloride
- reaction gas 11 refers to a source gas containing silicon
- SiH4 monosilane
- SiH2C12 dichlorosilane
- SiHCB trichlorosilane
- silicon tetrachloride SiC14
- SiC14 silicon tetrachloride
- the reaction gas 11 may further comprise at least one gas selected from hydrogen,
- reaction gas 11 contributes to the reaction gas 11
- the fluidizing gas inlet means 14, 14' and the reaction gas inlet means 15 may be any suitable fluidizing gas inlet means 14, 14' and the reaction gas inlet means 15.
- a tube or nozzle comprise a tube or nozzle, a chamber, a flange, a fitting, a gasket, etc, respectively.
- the silicon particles 3 are preferred to be made of a tube, a liner or a shaped article
- the gas distributing means 19 may have any geometry or structure
- fluidized bed 4a of silicon particles may be supplied in various ways depending on
- the fluidizing gas 10 may be supplied by a fluidizing gas inlet means 14,
- a fluidizing gas 10 may be supplied by a fluidizing gas inlet
- nozzle outlet may be positioned in between the gas distributing means 19 that
- the polycrystalline silicon particles are prepared in the present invention.
- a particle outlet means 16 is also required to be combined with the reactor
- An outlet pipe, which constitutes the particle outlet means 16, may be
- reaction gas inlet means 15 may be installed independently of the reaction gas inlet means 15 as
- an additional zone may be combined with the
- the additional zone can be provided at some part or a lower part of
- Silicon particles 3 i.e., silicon particles 3 discharged from the inner zone 4
- the present invention may be delivered to a storage member or a transfer member of the polycrystalline silicon product, which is directly connected to
- thus-prepared silicon product particles 3b may have a
- particles included therein may be used as seed crystals 3a for the silicon deposition.
- zone 4 may be delivered to a particle separation member where the particles can be
- the larger particles may be delivered to the storage member
- the silicon particles 3b are preferred to be cooled down while being
- a cooling medium such as water, oil or gas may be
- means 16 may be constituted in combination with the inner space of the reactor shell
- the elements that may contact high-temperature silicon product particles 3b may be made of a tube, a
- the wall may be made of a metal-material tube, a liner or a shaped product, the inner
- the silicon product particles 3b may be discharged from
- a particle separation member may be installed in between the
- the off-gas 13 comprises a fluidizing gas, a non-reacted reaction gas and a product gas, and passes through the
- off-gas 13 may be separated from an additional off-gas treating means 34.
- an off-gas treating means 34 which is illusti'ated in Figures 1 and 2, an off-gas treating means 34, which is illusti'ated in Figures 1 and 2, an off-gas treating means 34, which is illusti'ated in Figures 1 and 2, an off-gas treating means 34, which is illusti'ated in Figures 1 and 2, an off-gas treating means 34, which is illusti'ated in Figures 1 and 2, an off-gas treating means 34, which
- a cyclone comprises a cyclone, a filter, a packed column, a scrubber or a centrifuge, may be
- Fine silicon particles thus separated from the off-gas treating means 34, may be
- TMs may be obtained by
- off-gas treating means 34 may be recycled as seed crystals, but their amount can not
- the silicon seed crystals may be prepared by
- prepared seed crystals 3a may be introduced into the inner zone 4 of the reactor in a
- silicon particles may be pulverized into seed crystals inside
- This method has an
- the inner zone 4 comprises all spaces required for
- off-gas 13 containing a fluidizing gas, a non-reacted reaction gas and a byproduct
- the inner zone 4 plays a fundamental role for silicon deposition in
- the outer zone 5 is an independently formed
- particle bed 3 is not formed and silicon deposition does not occur due to no supply
- the outer zone 5 also plays important
- the outer zone 5 provides a space for protecting the reactor
- the outer zone 5 provides a space for installing an insulating material 6 that prevents or decreases heat loss from the reactor.
- the outer zone 5 provides a space for a heater to be installed around the
- the outer zone 5 provides a space for maintaining a substantially
- the outer zone 5 allows a real-time monitoring of the status of the
- sample from the outer zone connecting means 28 may reveal the presence or
- the outer zone 5 provides a space for installing a heater 8b surrounding
- the outer zone 5 provides a space required for efficiently
- the outer zone 5 plays various important aspects
- the outer zone may be partitioned into several
- the divided sections are preferred to be spatially communicated with each
- blaneket a felt, a foamed product, or a packing filler material.
- fluidized bed reactor may be installed in the outer zone 5 only, or installed alone
- means 8a, 8b may be installed in both the inner zone 4 and the outer zone 5, if
- Figure 2 illustrates an example when a plurality
- independent heating means 8a, 8b are installed in the outer zone 5.
- ⁇ 5 reactor they may be electrically connected in series or parallel relative to an electric
- the power supplying system comprising an electric source
- E and an electric energy supplying means 9a-9f may be constituted independently as
- 20 bed 4a may have an advantage of directly heating silicon particles in the fluidized
- the heater 8a is preferred to be positioned lower than the reaction gas
- gas 12 may be one or more selected from hydrogen, nitrogen, argon and helium.
- reactor shell and spatially connected to the outer zone 5 has the function of piping
- connection for supplying or discharging an inert gas 12 may be selected from a
- means 28 may be used to measure and control temperature, pressure or gas
- discharge of an inert gas may be independently performed by using a double-pipe
- inert gas connecting means 26a, 26b maintains an independent
- inert gas atmosphere in the outer zone 5 may also be used for measuring
- FIGS. 1 and 2 provide various examples in a comprehensive way
- the outer zone connecting means 28 may be installed to measure and/ or
- the outer zone connecting means 28 has the
- piping connection may be selected from a tube, a nozzle, a flange, a
- the outer zone connecting means 28 may be used to supply or discharge an
- inert gas 12 as well as to measure or control temperature, pressure or gas component.
- pressure (Pi) in the inner zone 4 changes according to the height in the inner zone 4
- pressure may be applied to the nature of the fluidization of solid particles.
- measuring or controlling pressure (Pi) in the inner zone 4 may be installed at such a
- Pressure controlling means i.e., the inner
- pressure controlling means 30 and the outer pressure controlling means 31 may be
- the pressure controlling means for the inner pressure i.e., the inner pressure
- controlling means 30 may be spatially connected to the inner zone 4 through an
- the pressure controlling means for the outer pressure i.e., the
- outer pressure controlling means 31 may be spatially connected to the outer zone 5
- pressure controlling means 30 and outer pressure controlling means 31 comprise the
- Either of the pressure controlling means, 30 and 31, comprises at least one
- the pressure controlling means for the inner pressure, 30, is interconnected
- control system selected from
- controlling means 31 may be independently constituted in terms of pressure, either
- the pressure controlling means may be partially or completely integrated with a
- either of the controlling means, 30 or 31, may further comprise a
- a separation device such as a filter or a scrubber for separating particles, or a container
- the inner pressure controlling means 30 may be installed at or
- zone 4 for measurement of pressure, temperature or gas component or for viewing
- the inner zone 4c may be stably measured and/ or controlled although it is
- the inner zone connecting means may be
- inner pressure controlling means 30 may also be installed at or connected to other
- a plurality of inner pressure controlling means 30 may be installed at
- the value of Pi is influenced by the characteristics of the fluidized
- connecting means 26a, 26b installed on or through the reactor shell, which is
- the outer zone 5 is preferred to be maintained under a substantially inert gas
- the outer zone connecting means 28 may also comprise the
- inert gas 12 to the outer zone 5 or an inert gas connecting means 26b that may be
- outer pressure controlling means 31 may be used to maintain the value of I Po - Pi
- Pimin / may be obtained when measured through a gas outlet means 17 or an
- the height of the reactor becomes too high to be used. In contrast,
- the pressure difference in the Hxiidized bed is preferred to be
- pressure value (Pi ma ⁇ ) and minimum pressure value (Pim m ) in the inner zone 4 is preferred to be within 1 bar.
- the inner pressure controlling means 30 may comprise a controlling means with an arithmetic processor that is capable of
- means 31 should comprise a pressure-difference
- controlling means that maintains the value of I Po - Pi I within 1 bar.
- the pressure-difference controlling means may be comprised in only one of
- controlling means with consideration that pressure value varies depending on the
- particle outlet means 16 or an inner zone connecting means, etc., which are spatially
- the pressure-difference controlling means may preferably be operated so that the requirements of Po ⁇ Pi and 0 bar ⁇ (Pi - Po) ⁇ 1 are satisfied. Then, the
- pressure-difference controlling means enables the outer zone pressure (Po) and
- the inner pressure controlling means 30 being spatially connected to an inner part of
- Pi is measured at a position that is spatially connected to the
- pressure-difference controlling means enables the requirement of 0 bar ⁇ (Po - Pi) ⁇ 1
- controlling means 30, 31 independently, or in the two controlling means 30, 31 in
- the pressure-difference controlling means maintains the value of I Po - Pi
- reaction pressure i.e., Po or Pi.
- fluidizing gas inlet means 14 can hardly be insulated to achieve a gas preheating to
- reaction pressure exceeds about 15 bar, it is difficult to heat the reaction pressure
- zone 4 (Pi) is preferred to be within about 1-15 bar based on the absolute pressure.
- the inner pressure controlling the inner pressure According to the pressure within the reactor, the inner pressure controlling the inner pressure
- the means 30 and/ or the outer pressure controlling means 31 may comprise a pressure-difference controlling means that can reduce the pressure difference
- the reaction pressure may be set to a high level by using the
- controlling means 30 for ultimate connection to the inner zone 4, both of the inner
- ⁇ pressure controlling means 30 and the outer pressure controlling means 31 may
- the inner pressure controlling means 30 may comprise a
- pressure-difference controlling means that maintains Pi at a predetermined value
- the outer pressure controlling means 31 may also comprise a
- pressure-difference controlling means that maintains Po at such a predetermined
- the outer pressure controlling means 31 may comprise a
- pressure-difference controlling means that maintains Po at a predetermined value
- the inner pressure controlling means 30 may also comprise a
- pressure-difference controlling means that maintains Pi at such a predetermined value, Pi*, that the requirement of I Po* - Pi*
- inner pressure controlling means 30 may comprise a pressure-difference controlling
- controlling means 31 may comprise a pressure-difference controlling means that
- Po* which are predetermined for maintaining the difference between Po and Po
- control parameters i.e., Pi* and Po*, for the pressure-difference controlling means.
- inner zone and the outer zone, respectively, may be predetermined based on the
- sealing means 41a, 41b may be deduced based on the component
- the influx of impurity elements from outer zone 5 into inner zone 4 may be
- impurity elements from inner zone 4 into outer zone 5 may be decreased or
- the pressure-difference controlling means may maintain the value of ⁇ P
- the outer pressure controlling means 31 in a manual, semi-automatic or automatic
- pressure-difference controlling means may comprise an equalizing line, which
- a connecting pipe which is comprised in the the inner pressure controlling
- means 30 and constitutes the equalizing line 23, may be installed at a position
- gas inlet means 15 a particle outlet means 16; a gas outlet means 17; or a seed
- crystals inlet means 18 all of which are spatially exposed to the inner zone in a
- outer pressure controlling means 31 and constitutes an equalizing line 23, may be
- outer zone 5 installed at a position selected for spatial connection with outer zone 5, including but
- the equalizing line 23 which interconnects spatially the inner pressure
- controlling means 30 and outer pressure controlling means 31, may be referred to as
- the impurity may undesirably be interchanged between two zones 4, 5.
- the impurity may undesirably be interchanged between two zones 4, 5.
- controlling means a pressure equalizing means, which can decrease or prevent the
- the pressure equalizing means may be further added to the equalizing line 23.
- the pressure equalizing means may be further added to the equalizing line 23.
- a 3-way valve a filter for separating particles, a damping container, a packed bed, a
- the pressure-difference controlling means may comprise a manual
- valve for controlling pressure or flow rate, or may further comprise a(n)
- a pressure gauge may be installed in combination with a pressure gauge or a pressure indicator that
- the pressure gauge or the pressure indicator is available commercially in the
- processing means such as a signal converter or a signal processor, etc., and/ or with a
- Figure 1 is a cross-sectional view of a high-pressure fluidized bed reactor for
- Figure 2 is a cross-sectional view of a high-pressure fiuidized bed reactor for
- Reactor shell 2 Reactor tube
- an inner pressure controlling means 30 may be any suitable inner pressure controlling means 30.
- an inert gas connecting means 26a may be constituted by interconnecting an inert gas connecting means 26a, a fourth
- the fourth pressure gauge 31a' and the fourth pressure control valve 31b' may be integrated with each other by a circuit, and thus
- the pressure in the outer zone may be controlled at a
- Po* may
- controlling means 31 may further comprise their own pressure-difference controlling
- an inner pressure controlling means 30 may be any suitable inner pressure controlling means 30.
- pressure of the upper part of the inner zone 4 may be controlled at a predetermined
- an inert gas connecting means 26b may be constituted by interconnecting an inert gas connecting means 26b, an on/ off
- valve 31c a third pressure gauge 31a and a third pressure control valve 31b.
- third pressure control valve 31b may be integrated with each other by a circuit
- the supply of an inert gas 12 may be controlled by the
- the pressure in the outer zone may be controlled at a
- Po* may
- controlling means 31 may further comprise their own pressure-difference controlling
- a gas outlet means 17 As illustrated in Figures 1 and 2, a gas outlet means 17, an off -gas treating
- an inner pressure controlling means 30 may be constituted by interconnecting the connecting pipe
- an inert gas connecting means 26b may be constituted by interconnecting an inert gas connecting means 26b and a
- an inert gas 12 may be supplied to the outer zone through an inert gas 12
- the pressure-difference gauge 32 is be a common
- controlling means 31 Besides the pressure control valve 31b, 31b' may be omitted.
- controlling means 31 are constituted as described above, the difference between the
- the inner pressure controlling means 30 may be connected to an
- first pressure control valve 30b may be controlled so that the condition of Pi ⁇ Po may be satisfied.
- the condition of 0 bar ⁇ 1 Po - Pi I ⁇ 1 bar may be satisfied at any position in
- control valve 30b in accordance with the values of ⁇ P measured with the
- a third pressure gauge 31a may be installed as the inner pressure controlling
- the pressure-difference controlling means may be further corrected or improved by
- an inner pressure controlling means 30 may be constituted by interconnecting a first pressure control valve 30b with the gas
- an inert gas 12 may be
- valve 31b, 31b' in Figure 1 may be omitted.
- controlling means 31 are constituted as described above, the difference between the
- valve 30b both of which behave as elements of a pressure-difference controlling
- the inner pressure controlling means 30 may be connected to an
- pressure control valve 30b may be controlled so that the condition of Pi > Po may be satisfied.
- the condition of 0 bar ⁇ I Po - Pi I ⁇ 1 bar may be satisfied at any position in
- first pressure control valve 3Ob 7 or by manual operation of the first pressure control
- valve 30b in accordance with the pressure value measured with the fourth pressure
- the outer pressure controlling means 31 may also be constituted by
- the object of the present Example may be accomplished by regulating
- the first pressure control valve 30b which behaves as an element of the
- pressure-difference controlling means that is comprised in a variety of outer
- an inner pressure controlling means 30 may ⁇
- a third pressure control valve 31b may be constituted by interconnecting a third pressure control valve 31b and
- the pressure-difference gauge 32 is a common element for both the inner
- controlling means 31 are constituted as described above, the difference between the
- control valve 31b both of which behave as elements of a pressure-difference controlling means.
- the inner pressure controlling means 30 may be connected to an
- the third pressure control valve 31b may be controlled so that the
- pressure control valve 30b may be controlled so that the condition of Pi > Po may be controlled
- the condition of 0 bar ⁇ j Po - Pi I ⁇ 1 bar may be satisfied at any position in
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Food Science & Technology (AREA)
- Silicon Compounds (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP07708807.8A EP1984297B1 (en) | 2006-02-07 | 2007-02-07 | High-pressure fluidized bed reactor for preparing granular polycrystalline silicon |
| US12/093,513 US7972562B2 (en) | 2006-02-07 | 2007-02-07 | High-pressure fluidized bed reactor for preparing granular polycrystalline silicon |
| ES07708807.8T ES2436770T3 (es) | 2006-02-07 | 2007-02-07 | Reactor de lecho fluidizado de alta presión para preparar silicio policristalino granular |
| CN2007800044671A CN101378989B (zh) | 2006-02-07 | 2007-02-07 | 用于制备粒状多晶硅的高压流化床反应器 |
| JP2008554132A JP4955706B2 (ja) | 2006-02-07 | 2007-02-07 | 粒状多結晶シリコン製造用流動層反応器 |
| US12/609,364 US8114352B2 (en) | 2006-02-07 | 2009-10-30 | High-pressure fluidized bed reactor for preparing granular polycrystalline silicon |
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| KR1020060011493A KR100756310B1 (ko) | 2006-02-07 | 2006-02-07 | 입자형 다결정실리콘 제조용 고압 유동층반응기 |
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| US12/609,364 Continuation US8114352B2 (en) | 2006-02-07 | 2009-10-30 | High-pressure fluidized bed reactor for preparing granular polycrystalline silicon |
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| EP (1) | EP1984297B1 (https=) |
| JP (1) | JP4955706B2 (https=) |
| KR (1) | KR100756310B1 (https=) |
| CN (1) | CN101378989B (https=) |
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|---|---|---|---|---|
| US8722141B2 (en) | 2007-05-04 | 2014-05-13 | Wacker Chemie Ag | Process for the continuous production of polycrystalline high-purity silicon granules |
| EP1990314A3 (de) * | 2007-05-04 | 2009-08-12 | Wacker Chemie AG | Verfahren zur kontinuierlichen Herstellung von polykristallinem hochreinen Siliciumgranulat |
| US8790782B2 (en) * | 2008-07-02 | 2014-07-29 | E I Du Pont De Nemours And Company | Method for making glass frit powders using aerosol decomposition |
| CN101318654B (zh) * | 2008-07-04 | 2010-06-02 | 清华大学 | 一种流化床制备高纯度多晶硅颗粒的方法及流化床反应器 |
| US9023425B2 (en) | 2009-11-18 | 2015-05-05 | Rec Silicon Inc | Fluid bed reactor |
| US8809746B2 (en) | 2010-03-04 | 2014-08-19 | Mitsubishi Materials Corporation | Apparatus for producing trichlorosilane and method for producing trichlorosilane |
| EP2436438A1 (en) * | 2010-10-01 | 2012-04-04 | Silicon Value LLC | Fluidized bed reactor |
| US8580203B2 (en) | 2010-10-01 | 2013-11-12 | Siliconvalue Llc | Fluidized bed reactor |
| EP2514520A1 (en) * | 2011-04-20 | 2012-10-24 | Silicon Value LLC | Polycrystal silicon manufacturing apparatus and method of manufacturing polycrystal silicon using the same |
| US8580204B2 (en) | 2011-04-20 | 2013-11-12 | Siliconvalue Llc | Fluidized bed reactor |
| US8377208B2 (en) | 2011-04-20 | 2013-02-19 | Siliconvalue Llc. | System and method for manufacturing polycrystal silicon |
| EP2514517A1 (en) * | 2011-04-20 | 2012-10-24 | Silicon Value LLC | Fluidized bed reactor |
| EP2987771A4 (en) * | 2013-04-16 | 2016-11-23 | Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd | SWITCH-LAYER REACTOR AND METHOD FOR THE PRODUCTION OF HIGH-PURITY GRANULAR POLYCRYSTALLINE SILICON |
| US9815041B2 (en) | 2013-04-16 | 2017-11-14 | Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd. | Fluidized bed reactor and a process using same to produce high purity granular polysilicon |
| US10081003B2 (en) | 2013-04-16 | 2018-09-25 | Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd. | Fluidized bed reactor and a process using same to produce high purity granular polysilicon |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101378989A (zh) | 2009-03-04 |
| RU2397952C2 (ru) | 2010-08-27 |
| ES2436770T3 (es) | 2014-01-07 |
| JP4955706B2 (ja) | 2012-06-20 |
| CN101378989B (zh) | 2012-09-05 |
| US20080267834A1 (en) | 2008-10-30 |
| US20100047136A1 (en) | 2010-02-25 |
| EP1984297A1 (en) | 2008-10-29 |
| EP1984297A4 (en) | 2012-10-10 |
| RU2008132506A (ru) | 2010-02-20 |
| US7972562B2 (en) | 2011-07-05 |
| US8114352B2 (en) | 2012-02-14 |
| JP2009525937A (ja) | 2009-07-16 |
| KR100756310B1 (ko) | 2007-09-07 |
| KR20070080306A (ko) | 2007-08-10 |
| EP1984297B1 (en) | 2013-10-30 |
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