WO2007065096A3 - Chalcogenide solar cells - Google Patents

Chalcogenide solar cells Download PDF

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Publication number
WO2007065096A3
WO2007065096A3 PCT/US2006/061324 US2006061324W WO2007065096A3 WO 2007065096 A3 WO2007065096 A3 WO 2007065096A3 US 2006061324 W US2006061324 W US 2006061324W WO 2007065096 A3 WO2007065096 A3 WO 2007065096A3
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WO
WIPO (PCT)
Prior art keywords
group
film
nanoparticles
iiia
chalcogenide
Prior art date
Application number
PCT/US2006/061324
Other languages
French (fr)
Other versions
WO2007065096A2 (en
Inventor
Duren Jeroen K J Van
Brent Bollman
Martin R Roscheisen
Brian M Sager
Original Assignee
Nanosolar Inc
Duren Jeroen K J Van
Brent Bollman
Martin R Roscheisen
Brian M Sager
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanosolar Inc, Duren Jeroen K J Van, Brent Bollman, Martin R Roscheisen, Brian M Sager filed Critical Nanosolar Inc
Priority to EP06840052A priority Critical patent/EP1961047A2/en
Priority to CN2006800520194A priority patent/CN101336487B/en
Publication of WO2007065096A2 publication Critical patent/WO2007065096A2/en
Publication of WO2007065096A3 publication Critical patent/WO2007065096A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1241—Metallic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
    • C23C18/127—Preformed particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/123—Spraying molten metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

A precursor material for forming a film of a group IB-IIIA- chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IDA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA- chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
PCT/US2006/061324 2005-11-29 2006-11-29 Chalcogenide solar cells WO2007065096A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP06840052A EP1961047A2 (en) 2005-11-29 2006-11-29 Chalcogenide solar cells
CN2006800520194A CN101336487B (en) 2005-11-29 2006-11-29 Chalcogenide solar cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/290,633 US8048477B2 (en) 2004-02-19 2005-11-29 Chalcogenide solar cells
US11/290,633 2005-11-29

Publications (2)

Publication Number Publication Date
WO2007065096A2 WO2007065096A2 (en) 2007-06-07
WO2007065096A3 true WO2007065096A3 (en) 2007-12-21

Family

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Family Applications (1)

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US (2) US8048477B2 (en)
EP (1) EP1961047A2 (en)
CN (1) CN101336487B (en)
WO (1) WO2007065096A2 (en)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8642455B2 (en) * 2004-02-19 2014-02-04 Matthew R. Robinson High-throughput printing of semiconductor precursor layer from nanoflake particles
US8846141B1 (en) 2004-02-19 2014-09-30 Aeris Capital Sustainable Ip Ltd. High-throughput printing of semiconductor precursor layer from microflake particles
US20070163639A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from microflake particles
US8372734B2 (en) * 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US8623448B2 (en) 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US7700464B2 (en) * 2004-02-19 2010-04-20 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
US20070163642A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles
US20070163641A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US8309163B2 (en) 2004-02-19 2012-11-13 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US7605328B2 (en) * 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US20070169809A1 (en) * 2004-02-19 2007-07-26 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US8319093B2 (en) * 2006-07-08 2012-11-27 Certainteed Corporation Photovoltaic module
KR100909179B1 (en) * 2006-07-24 2009-07-22 주식회사 엘지화학 Method for manufacturing a CIS-based solar cell absorption layer
US7709056B2 (en) * 2007-05-16 2010-05-04 Uchicago Argonne, Llc Synthesis of transparent conducting oxide coatings
US20090305449A1 (en) * 2007-12-06 2009-12-10 Brent Bollman Methods and Devices For Processing A Precursor Layer In a Group VIA Environment
TWI373148B (en) * 2007-12-20 2012-09-21 Ind Tech Res Inst Fabrication methods for nano-scale chalcopyritic powders and polymeric thin-film solar cells
KR100989077B1 (en) * 2008-02-27 2010-10-25 한국과학기술연구원 Fabrication of thin film for solar cells using paste and the thin film fabricated thereby
US8592675B2 (en) 2008-02-29 2013-11-26 International Business Machines Corporation Photovoltaic devices with enhanced efficiencies using high-aspect-ratio nanostructures
US8551558B2 (en) 2008-02-29 2013-10-08 International Business Machines Corporation Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures
US20110056564A1 (en) * 2008-05-09 2011-03-10 Korgel Brian A Nanoparticles and methods of making and using
AU2010206814A1 (en) 2009-01-21 2011-08-11 Purdue Research Foundation Selenization of precursor layer containing CulnS2 nanoparticles
FR2956869B1 (en) 2010-03-01 2014-05-16 Alex Hr Roustaei SYSTEM FOR PRODUCING HIGH CAPACITY FLEXIBLE FILM FOR PHOTOVOLTAIC AND OLED CELLS BY CYCLIC LAYER DEPOSITION
US7922804B2 (en) * 2009-03-25 2011-04-12 Jenn Feng Industrial Co., Ltd. Method for preparing sol-gel solution for CIGS solar cell
WO2010126699A2 (en) 2009-04-29 2010-11-04 Hunter Douglas Industries B.V. Architectural panels with organic photovoltaic interlayers and methods of forming the same
EP2435248A2 (en) * 2009-05-26 2012-04-04 Purdue Research Foundation Thin films for photovoltaic cells
AT508283A1 (en) * 2009-06-02 2010-12-15 Isovoltaic Gmbh COMPOSITE MATERIAL COMPRISING NANOPARTICLES AND MANUFACTURING PHOTOACTIVE LAYERS CONTAINING QUATERNARY, PENTANIC AND HIGHER ASSEMBLED SEMICONDUCTOR APPLICATIONS
US9103000B2 (en) * 2009-11-25 2015-08-11 Zetta Research and Development LLC—AQT Series Low melting point sputter targets for chalcogenide photovoltaic applications and methods of manufacturing the same
US20110215281A1 (en) * 2010-03-03 2011-09-08 Jenn Feng New Energy Co., Ltd Method for preparing cigs inks without surfactant
EP2560211A4 (en) * 2010-03-29 2014-05-07 Kyocera Corp Process for manufacture of photoelectric conversion device, and semiconductor-forming solution
US8546176B2 (en) * 2010-04-22 2013-10-01 Tsmc Solid State Lighting Ltd. Forming chalcogenide semiconductor absorbers
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US20130118585A1 (en) * 2010-06-22 2013-05-16 University Of Florida Research Foundation, Inc. Nanocrystalline copper indium diselenide (cis) and ink-based alloys absorber layers for solar cells
KR101079008B1 (en) * 2010-06-29 2011-11-01 조성매 Composition light converter for poly silicon solar cell and solar cell
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
EP2660871A1 (en) * 2010-12-27 2013-11-06 Toppan Printing Co., Ltd. Compound semiconductor thin film solar cell, and process for production thereof
CN102163637A (en) * 2011-01-20 2011-08-24 苏州瑞晟太阳能科技有限公司 CIGS (copper-indium-gallium-selenium) solar photocell and preparation method thereof
WO2012107256A1 (en) 2011-02-10 2012-08-16 Empa Process for producing light absorbing chalcogenide films
WO2012112821A1 (en) * 2011-02-16 2012-08-23 Sandia Solar Technologies Llc Solar absorbing films with enhanced electron mobility and methods of their preparation
US8647897B2 (en) 2011-03-21 2014-02-11 The Board Of Trustees Of The Leland Stanford Junior University Air-stable ink for scalable, high-throughput layer deposition
KR101262501B1 (en) * 2011-04-04 2013-05-08 엘지이노텍 주식회사 Solar cell apparatus and method of fabricating the same
US9368660B2 (en) 2011-08-10 2016-06-14 International Business Machines Corporation Capping layers for improved crystallization
JP5536153B2 (en) * 2011-09-16 2014-07-02 新日光能源科技股▲ふん▼有限公司 Method of forming chalcogenide semiconductor film and photovoltaic device
ES2402313B1 (en) 2011-09-30 2014-03-04 Universitat Jaume I De Castellón INKS FOR THE "IN SITU" OBTAINING OF CALCÓGENOS AND / OR CALCOGENUROS THAT GIVE PLACE TO SEMICONDUCTOR LAYERS, THEIR OBTAINING AND HOW TO USE
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
EP3460831A1 (en) 2012-07-09 2019-03-27 Nanoco Technologies, Ltd. Group 13 selenide nanoparticles
US9082619B2 (en) 2012-07-09 2015-07-14 International Solar Electric Technology, Inc. Methods and apparatuses for forming semiconductor films
US9105798B2 (en) * 2013-05-14 2015-08-11 Sun Harmonics, Ltd Preparation of CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks
US9196767B2 (en) 2013-07-18 2015-11-24 Nanoco Technologies Ltd. Preparation of copper selenide nanoparticles
US20160284901A1 (en) * 2013-08-30 2016-09-29 Korea Institute Of Energy Research Method of manufacturing ci(g)s-based thin film including aging of slurry comprising binary nanoparticles, and ci(g)s-based thin film manufactured thereby
US9960314B2 (en) * 2013-09-13 2018-05-01 Nanoco Technologies Ltd. Inorganic salt-nanoparticle ink for thin film photovoltaic devices and related methods
US20150162468A1 (en) * 2013-12-06 2015-06-11 Nanoco Technologies Ltd. Core-Shell Nanoparticles for Photovoltaic Absorber Films
US9231129B2 (en) 2014-03-28 2016-01-05 Sunpower Corporation Foil-based metallization of solar cells
KR101503043B1 (en) * 2014-04-14 2015-03-25 한국에너지기술연구원 A manufacturing method of absorption layer of thin film solar cell and thin film solar cell thereof
US10319589B2 (en) * 2014-09-12 2019-06-11 The Regents Of The University Of California High performance thin films from solution processible two-dimensional nanoplates
CN105845760B (en) * 2016-05-26 2017-05-10 电子科技大学 Copper-indium-gallium-selenium and copper-stibium-selenium composite nanomaterial and synthetic method therefor, and thin film battery
US10319588B2 (en) * 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
CN112501583B (en) * 2020-11-26 2023-01-24 北京大学深圳研究生院 Preparation method of transition metal diselenide film
CN117888060A (en) * 2024-03-12 2024-04-16 北京师范大学 Preparation method and application of limited-domain thin-layer two-dimensional material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050003187A1 (en) * 2000-10-13 2005-01-06 Adams Edward William Surface-modified semiconductive and metallic nanoparticles having enhanced dispersibility in aqueous media
US20050183767A1 (en) * 2004-02-19 2005-08-25 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5925443A (en) * 1991-09-10 1999-07-20 International Business Machines Corporation Copper-based paste containing copper aluminate for microstructural and shrinkage control of copper-filled vias
US5817410A (en) * 1991-11-18 1998-10-06 Matsushita Electric Industrial Co., Ltd. Nonlinear optical composites using linear transparent substances and method for producing the same
EP0574716B1 (en) * 1992-05-19 1996-08-21 Matsushita Electric Industrial Co., Ltd. Method for preparing chalcopyrite-type compound
JP3064701B2 (en) * 1992-10-30 2000-07-12 松下電器産業株式会社 Method for producing chalcopyrite-type compound thin film
EP0654831A3 (en) * 1993-11-18 1998-01-14 Matsushita Battery Industrial Co Ltd Method of manufacturing solar cell
EP0743686A3 (en) * 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Precursor for semiconductor thin films and method for producing semiconductor thin films
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US5905000A (en) * 1996-09-03 1999-05-18 Nanomaterials Research Corporation Nanostructured ion conducting solid electrolytes
US5985691A (en) * 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
US6323417B1 (en) * 1998-09-29 2001-11-27 Lockheed Martin Corporation Method of making I-III-VI semiconductor materials for use in photovoltaic cells
US6245849B1 (en) * 1999-06-02 2001-06-12 Sandia Corporation Fabrication of ceramic microstructures from polymer compositions containing ceramic nanoparticles
CN1211510C (en) * 1999-10-13 2005-07-20 钟渊化学工业株式会社 Porous acrylic fiber and fabric comprising same, and method of producing same
AU2249201A (en) * 1999-11-16 2001-05-30 Midwest Research Institute A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2
US6454886B1 (en) * 1999-11-23 2002-09-24 Technanogy, Llc Composition and method for preparing oxidizer matrix containing dispersed metal particles
EP1428243A4 (en) * 2001-04-16 2008-05-07 Bulent M Basol Method of forming semiconductor compound film for fabrication of electronic device and film produced by same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050003187A1 (en) * 2000-10-13 2005-01-06 Adams Edward William Surface-modified semiconductive and metallic nanoparticles having enhanced dispersibility in aqueous media
US20050183767A1 (en) * 2004-02-19 2005-08-25 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell

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US8048477B2 (en) 2011-11-01
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