WO2007021549A3 - Ligh emitting diodes with quantum dots - Google Patents

Ligh emitting diodes with quantum dots Download PDF

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Publication number
WO2007021549A3
WO2007021549A3 PCT/US2006/030111 US2006030111W WO2007021549A3 WO 2007021549 A3 WO2007021549 A3 WO 2007021549A3 US 2006030111 W US2006030111 W US 2006030111W WO 2007021549 A3 WO2007021549 A3 WO 2007021549A3
Authority
WO
WIPO (PCT)
Prior art keywords
quantum dots
emitting diodes
group iii
matrix
ligh emitting
Prior art date
Application number
PCT/US2006/030111
Other languages
French (fr)
Other versions
WO2007021549A2 (en
Inventor
Hock Ng
Original Assignee
Lucent Technologies Inc
Hock Ng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc, Hock Ng filed Critical Lucent Technologies Inc
Priority to JP2008526071A priority Critical patent/JP2009505399A/en
Priority to EP06789206A priority patent/EP1913647A2/en
Publication of WO2007021549A2 publication Critical patent/WO2007021549A2/en
Publication of WO2007021549A3 publication Critical patent/WO2007021549A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

An apparatus includes a light-emitting diode. The light-emitting diode has a semiconductor matrix of one or more group III - nitride alloys and quantum dots dispersed inside the matrix. The quantum dots include a group III - nitride alloy different from the one or more group III - nitride alloys of the matrix.
PCT/US2006/030111 2005-08-11 2006-08-02 Ligh emitting diodes with quantum dots WO2007021549A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008526071A JP2009505399A (en) 2005-08-11 2006-08-02 Light emitting diode with quantum dots
EP06789206A EP1913647A2 (en) 2005-08-11 2006-08-02 Ligh emitting diodes with quantum dots

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/202,114 2005-08-11
US11/202,114 US20070034858A1 (en) 2005-08-11 2005-08-11 Light-emitting diodes with quantum dots

Publications (2)

Publication Number Publication Date
WO2007021549A2 WO2007021549A2 (en) 2007-02-22
WO2007021549A3 true WO2007021549A3 (en) 2007-04-19

Family

ID=37533263

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/030111 WO2007021549A2 (en) 2005-08-11 2006-08-02 Ligh emitting diodes with quantum dots

Country Status (5)

Country Link
US (1) US20070034858A1 (en)
EP (1) EP1913647A2 (en)
JP (1) JP2009505399A (en)
KR (1) KR20080029977A (en)
WO (1) WO2007021549A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100682928B1 (en) * 2005-02-03 2007-02-15 삼성전자주식회사 Energy downconversion film and quantum dot film comprising quantum dot
US7348212B2 (en) * 2005-09-13 2008-03-25 Philips Lumileds Lighting Company Llc Interconnects for semiconductor light emitting devices
US20080218068A1 (en) * 2007-03-05 2008-09-11 Cok Ronald S Patterned inorganic led device
KR101704022B1 (en) * 2010-02-12 2017-02-07 엘지이노텍 주식회사 Light emitting device, method for fabricating the same and light emitting device package
JP5732410B2 (en) * 2012-01-05 2015-06-10 富士フイルム株式会社 Method for forming quantum dot structure, wavelength conversion element, light-to-light conversion device, and photoelectric conversion device
GB2573576B (en) * 2018-05-11 2020-06-10 Rockley Photonics Ltd Optoelectronic device and method of manufacturing thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030059971A1 (en) * 2001-09-27 2003-03-27 Chua Soo Jin Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
US20040131097A1 (en) * 2003-01-07 2004-07-08 Deppe Dennis G Optoelectronic and electronic devices based on quantum dots having proximity-placed acceptor impurities, and methods therefor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
US6558995B1 (en) * 1998-07-31 2003-05-06 Emory University Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots
DE10218409A1 (en) * 2002-04-24 2003-11-06 Merck Patent Gmbh Process for the production of nitrides
AU2003274409A1 (en) * 2003-08-08 2005-02-25 Centre National De La Recherche Scientifique (C.N.R.S.) Method to manufacture indium nitride quantum dots
KR101119019B1 (en) * 2004-12-14 2012-03-12 주식회사 엘지실트론 GaN semiconductor and manufacturing methods for the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030059971A1 (en) * 2001-09-27 2003-03-27 Chua Soo Jin Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
US20040131097A1 (en) * 2003-01-07 2004-07-08 Deppe Dennis G Optoelectronic and electronic devices based on quantum dots having proximity-placed acceptor impurities, and methods therefor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YASUHIKO ARAKAWA: "Progress in GaN-Based Quantum Dots for Optoelectronics Applications", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 8, no. 4, July 2002 (2002-07-01), XP011066167, ISSN: 1077-260X *

Also Published As

Publication number Publication date
KR20080029977A (en) 2008-04-03
JP2009505399A (en) 2009-02-05
WO2007021549A2 (en) 2007-02-22
US20070034858A1 (en) 2007-02-15
EP1913647A2 (en) 2008-04-23

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