WO2007017271A2 - Plasma generating device and plasma generating method - Google Patents
Plasma generating device and plasma generating method Download PDFInfo
- Publication number
- WO2007017271A2 WO2007017271A2 PCT/EP2006/007889 EP2006007889W WO2007017271A2 WO 2007017271 A2 WO2007017271 A2 WO 2007017271A2 EP 2006007889 W EP2006007889 W EP 2006007889W WO 2007017271 A2 WO2007017271 A2 WO 2007017271A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- electrodes
- generating device
- plasma generating
- grid
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
Definitions
- the present invention relates to a plasma generating device and a plasma generation method for producing a Plasmajets, which is particularly suitable for the treatment of sheet goods and of planar and three-dimensional substrates.
- the substrate is passed between the electrodes. Since the distance between the electrodes is limited due to the increasing with the distance filament filament discharge, not arbitrarily thick substrates can be treated. Furthermore, the discharges form not only in the gas cavities above the surface of the substrate, but also partly between the electrode on which the substrate rests and the substrate. This effect known as backside treatment is often undesirable and often can not be avoided even with costly measures.
- the substrate In the case of metallic substrates, the substrate usually itself forms the electrode. Since the formation of the discharges depends directly on the formation of the electric field, it comes with non-planar substrates
- the exiting plasma has a low temperature when using noble gases.
- large beam diameters as well as distances between substrate and plasma source can be realized.
- noble gases are very expensive, the use for many applications is not worthwhile.
- the plasma heats the working gas to some 100 0 C, resulting in
- Damage to the substrates to be treated can lead.
- the low energy density of the discharge causes problems here. This requires a small distance between the substrate and the plasma source.
- DE 43 32 866 A1 discloses a further proposal for the use of dielectrically impeded designs.
- charges Here, a discharge between an electrode and a grid is ignited, wherein the substrate is located on the side facing away from the electrode of the grid.
- the substrate is modified by the ultraviolet radiation and / or fast electrons on the surface. Since the diffusion of the excited ions and molecules is very low, they do not contribute to the surface modification, or only directly at the lattice. In particular, the high-energy UV radiation is rapidly absorbed in air, which also severely limits the treatment effect. In addition, the electrons quickly hit with neutral atoms and molecules and have only a very short lifetime and thus range. This severely limits the application of this arrangement.
- WO 2004/051702 A2 also discloses a plasma generating device for treating substrates with a plasma under atmospheric pressure.
- This device has two electrodes, which are arranged planar one above the other, wherein a dielectric is located between the electrodes.
- the lower electrode has a multiplicity of openings through which a plasma stream in each case can emerge in the direction of a substrate.
- openings here is also a kind of perforated plate in question.
- the holes are consistently of macroscopic size in this perforated plate, so that large diameter plasma jets are ejected.
- the object of the present invention is achieved in that a plasma generating device is used which has two electrodes, between which a dielectric is arranged as a discharge barrier. This dielectric barrier prevents the direct short circuit of the electrodes. The electrical power and thus the temperature of the plasma are thus reduced.
- an opening is arranged as a gas or plasma outlet, through which the plasma can be expelled in the direction of a substrate.
- a grid, mesh or fabric is now arranged over the cross section of this opening. If several such openings are provided in the electrode, then one, several or even all of these openings can be provided with such a grid, mesh or fabric.
- the grid, mesh or fabric on a porosity, which characterizes the permeability of the grid, mesh or fabric.
- This porosity can be varied and determined by weave, number of layers, grain size, shape, distribution, orientation, phase content, etc.
- the porosity of the mesh, mesh or fabric is between 5% and 70%, advantageously between 30% and 55%.
- the mesh size of the grid, mesh or fabric is advantageously between 0.0005 mm and 2 mm, advantageously between 0.01 mm and 0.5 mm. All mesh shapes are possible, in particular rectangular or square meshes.
- the net or fabric can be not only simple, but also woven several times, one or more layers.
- grids, nets or fabrics can be used which are optically dense or opaque to light.
- the network can now be arranged on the side of the second electrode facing the first electrode, be arranged inside the opening or else be arranged on the outside of the second electrode facing the substrate.
- the grid, mesh or fabric is conductive, so that at the same time it also supplement or take over the function of the second electrode can.
- the grid, mesh or fabric may also be part of the second electrode itself or represent the second electrode in the region of the openings. If the second electrode or the conductive mesh, grid or tissue has the potential of the substrate, then there is no potential difference between the plasma jet and the substrate. It is then also possible to treat conductive surfaces without the formation of heat discharges. In addition, the unwanted backside treatment is avoided for all materials. However, the modifications made by the system on the surface of a substrate are still comparable to those of direct barrier discharge.
- the shape of the openings can be variable. In particular, it suggests that gaps, slots and / or holes may be used as openings. In particular, in the case of a gap, this may for example be oriented transversely to the feed direction of a substrate. The length of the gap then defines the width of the coated or treated area on the substrate. By suitable choice of the gap length and electrode length, a complete or desired partial treatment of the substrate can thus be achieved, adapted to each substrate.
- a particular advantage over conventional barrier or "corona" discharges is that the device described operates without a counter electrode and the generated plasma reaches the surface to be treated free of potential, making it possible to treat both conductive, semiconducting and insulating substrates
- the gap and gas flow are dimensioned such that flow velocities of more than 2 m / s are achieved in the gap.
- the range of the plasma is increased and it is possible to direct the plasma jet to more distant substrate surfaces.
- the plasma jet of the device is ideal for modifying surfaces.
- the system is not dependent on the use of noble gases.
- gases e.g. Air or nitrogen, oxygen, carbon dioxide, hydrogen, halogen-containing gases and gas mixtures are used.
- the gas contains only little oxygen or layer-forming substances. Thus, destruction and contamination of the electrode assembly can be avoided.
- the emerging from the device plasma jet strikes the substrate during the treatment and clings to this. This results in a much wider treatment zone than the gap width or the cross section of the jet measured. As a result, the gap can be selected small, without resulting in a reduction of the treatment zone.
- the electrode assembly is made long stretched, for example, about 15 cm to about 2 m, advantageously between 10 cm and 150 cm.
- web goods such as packaging film can be treated in one operation in full width.
- the duration of treatment results from the width of the plasma jet and the feed rate.
- the distance of the substrate can be freely selected over the exit length of the jet.
- the Linearj et the invention relates is also suitable for the surface coating of surfaces.
- a coating or a gas enriched with a precursor (coating precursor) is fed between two jets, which gas is activated in the discharge and is excited to deposit the layer on the substrate. Since the gap or the net of the jet is traversed by a non-coating gas, no parasitic contamination occurs there.
- the treatment area can additionally be purged with an inert gas or protected from the ingress of ambient gases. This allows, for example, oxygen-free treatments and coatings to be realized, as well as avoiding unwanted reactions.
- the excitation of the plasma between the electrodes can be carried out by commercially available corona generators.
- the discharge can be operated with typical voltages of a few hundred volts to a few tens of kv depending on the breakdown voltage of the gas.
- the frequency of the AC voltage can also be chosen very freely in the range of a few Hz up to a few MHz.
- the length of the jet is limited only by the length of the jet Electrodes limited.
- the gas supply can be homogenized over the entire area via gas distributor.
- a pressure difference must be created between the two sides of the network. This is typically between 1 mbar and 1 bar, more preferably between 1 mbar and 400 mbar.
- Plasma are pulsed by an intermittent voltage.
- the homogenization can also be promoted by the additional introduction of UV radiation.
- FIG. 1 shows a plasma generation device according to the invention.
- the description of the figure is the description of an embodiment, but individual aspects that are described in the context of the embodiment, yet as individual aspects own relevance relevant to the invention.
- FIG. 1 shows the cross section through a plasma generating device according to the invention.
- This has a first electrode 3, which, in the drawing, below, associated with a second electrode 4 is opposite.
- the first electrode 3 is surrounded by a dielectric 8, so that by applying a high voltage from the high voltage source 11 to the electrodes 3 and 4, a barrier discharge between the two electrodes 3 and 4 occurs in the gap 2 as a discharge space.
- the first electrode 3 is surrounded by a housing 14, which has an inlet 10 for a gas stream 12 on the side of the electrode 3 facing away from the electrode 4. This gas flows between the housing 149 and the electrode 3 in the discharge space 2, where it generates a plasma 13 under the high-voltage barrier discharge.
- the electrode 4 has an opening 5, which is formed in a gap shape. It extends in Figure 1 perpendicular to the plane of the drawing over the entire width of the substrate 7 shown in Figure 1 through this opening a Plasmajet 6 is ejected, which strikes the substrate 7.
- working gas and plasma gas for example, nitrogen is used here.
- FIG. 1 shows an embodiment of the plasma generating device, in which the electrodes 3 and 4 are arranged planar parallel to each other. It is also possible symmetrical arrangements of the two electrodes.
- a linear jet of 200 mm in length with a gas gap of 1 mm width is operated with 50 slm of nitrogen and a 150 W corona generator.
- the unit slm designates standard liters per minute, which means that as many gas particles flow out per minute as in a volume of one liter at normal pressure of 1013.25 mbar and normal temperature of
- the jet treats a BOPP film at a speed of 5 mm / s. Before treatment, the film has a surface energy of 30 tnN / m. After treatment, the surface energy is 60 mN / m.
- Example 2
- a silicon wafer is treated with the linear jet as before. Before the treatment, the contact angle of a drop of water on the wafer is 56 °. After treatment, the contact angle is 15 °.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Treatment Of Fiber Materials (AREA)
- Cleaning In General (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/063,328 US20090152097A1 (en) | 2005-08-11 | 2006-08-09 | Plasma generating device and plasma generating method |
DE112006002127T DE112006002127A5 (en) | 2005-08-11 | 2006-08-09 | Plasma generating device and plasma generating method |
JP2008525480A JP2009505342A (en) | 2005-08-11 | 2006-08-09 | Plasma generating apparatus and plasma generating method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005038079 | 2005-08-11 | ||
DE102005038079.4 | 2005-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007017271A2 true WO2007017271A2 (en) | 2007-02-15 |
WO2007017271A3 WO2007017271A3 (en) | 2007-04-12 |
Family
ID=37177780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2006/007889 WO2007017271A2 (en) | 2005-08-11 | 2006-08-09 | Plasma generating device and plasma generating method |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090152097A1 (en) |
JP (1) | JP2009505342A (en) |
DE (1) | DE112006002127A5 (en) |
WO (1) | WO2007017271A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009006484A1 (en) | 2009-01-28 | 2010-07-29 | Ahlbrandt System Gmbh | Device for modifying the surfaces of sheet, plate and sheet goods with a device for generating a plasma |
US20100193129A1 (en) * | 2007-08-31 | 2010-08-05 | Yoichiro Tabata | Apparatus for generating dielectric barrier discharge gas |
JP2011523760A (en) * | 2008-05-21 | 2011-08-18 | フラウンホーファーゲゼルシャフト ツール フォルデルング デル アンゲヴァンテン フォルシユング エー.フアー. | Plasma stamp, plasma processing apparatus, plasma processing method, and plasma stamp manufacturing method |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011110191A1 (en) * | 2010-03-10 | 2011-09-15 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e. V. | Method and arrangement for treating an object with a low- temperature plasma |
CN102519917B (en) * | 2011-12-13 | 2014-03-12 | 清华大学 | Dielectric barrier discharge based solid sample denudation method and device thereof |
JP5911178B2 (en) * | 2013-05-07 | 2016-04-27 | 株式会社イー・スクエア | Plasma surface treatment equipment |
KR101913985B1 (en) * | 2014-10-29 | 2018-10-31 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | Radical gas generation system |
CN104936371B (en) * | 2015-06-09 | 2017-07-07 | 北京三十四科技有限公司 | A kind of coreless armature dielectric impedance structure |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4332866A1 (en) * | 1993-09-27 | 1995-03-30 | Fraunhofer Ges Forschung | Surface treatment with barrier discharge |
US20030052096A1 (en) * | 2001-07-02 | 2003-03-20 | Plasmasol, Llc | Novel electrode for use with atmospheric pressure plasma emitter apparatus and method for using the same |
WO2004051702A2 (en) * | 2002-12-02 | 2004-06-17 | Sem Technology Co., Ltd | Apparatus for treating surfaces of a substrate with atmospheric pressure plasma |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4486286A (en) * | 1982-09-28 | 1984-12-04 | Nerken Research Corp. | Method of depositing a carbon film on a substrate and products obtained thereby |
JPH0521393A (en) * | 1991-07-11 | 1993-01-29 | Sony Corp | Plasma processor |
DE19532412C2 (en) * | 1995-09-01 | 1999-09-30 | Agrodyn Hochspannungstechnik G | Device for surface pretreatment of workpieces |
US6083363A (en) * | 1997-07-02 | 2000-07-04 | Tokyo Electron Limited | Apparatus and method for uniform, low-damage anisotropic plasma processing |
US20050011447A1 (en) * | 2003-07-14 | 2005-01-20 | Tokyo Electron Limited | Method and apparatus for delivering process gas to a process chamber |
-
2006
- 2006-08-09 US US12/063,328 patent/US20090152097A1/en not_active Abandoned
- 2006-08-09 DE DE112006002127T patent/DE112006002127A5/en not_active Withdrawn
- 2006-08-09 JP JP2008525480A patent/JP2009505342A/en active Pending
- 2006-08-09 WO PCT/EP2006/007889 patent/WO2007017271A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4332866A1 (en) * | 1993-09-27 | 1995-03-30 | Fraunhofer Ges Forschung | Surface treatment with barrier discharge |
US20030052096A1 (en) * | 2001-07-02 | 2003-03-20 | Plasmasol, Llc | Novel electrode for use with atmospheric pressure plasma emitter apparatus and method for using the same |
WO2004051702A2 (en) * | 2002-12-02 | 2004-06-17 | Sem Technology Co., Ltd | Apparatus for treating surfaces of a substrate with atmospheric pressure plasma |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100193129A1 (en) * | 2007-08-31 | 2010-08-05 | Yoichiro Tabata | Apparatus for generating dielectric barrier discharge gas |
US8857371B2 (en) * | 2007-08-31 | 2014-10-14 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Apparatus for generating dielectric barrier discharge gas |
JP2011523760A (en) * | 2008-05-21 | 2011-08-18 | フラウンホーファーゲゼルシャフト ツール フォルデルング デル アンゲヴァンテン フォルシユング エー.フアー. | Plasma stamp, plasma processing apparatus, plasma processing method, and plasma stamp manufacturing method |
DE102009006484A1 (en) | 2009-01-28 | 2010-07-29 | Ahlbrandt System Gmbh | Device for modifying the surfaces of sheet, plate and sheet goods with a device for generating a plasma |
WO2010085941A2 (en) | 2009-01-28 | 2010-08-05 | Ahlbrandt System Gmbh | Apparatus for modifying the surfaces of web, plate and sheet products using a device for generating plasma |
WO2010085941A3 (en) * | 2009-01-28 | 2010-11-18 | Ahlbrandt System Gmbh | Apparatus for modifying the surfaces of web, plate and sheet products using a device for generating plasma |
Also Published As
Publication number | Publication date |
---|---|
JP2009505342A (en) | 2009-02-05 |
WO2007017271A3 (en) | 2007-04-12 |
DE112006002127A5 (en) | 2008-07-03 |
US20090152097A1 (en) | 2009-06-18 |
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