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Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece

Info

Publication number
WO2007008399A3
WO2007008399A3 PCT/US2006/024938 US2006024938W WO2007008399A3 WO 2007008399 A3 WO2007008399 A3 WO 2007008399A3 US 2006024938 W US2006024938 W US 2006024938W WO 2007008399 A3 WO2007008399 A3 WO 2007008399A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
sample
material
layers
specified
emitted
Prior art date
Application number
PCT/US2006/024938
Other languages
French (fr)
Other versions
WO2007008399A2 (en )
Inventor
Steve Hummel
Tom Walker
Original Assignee
Accent Optical Tech Inc
Steve Hummel
Tom Walker
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/6489Photoluminescence of semiconductors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9505Wafer internal defects, e.g. microcracks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/645Specially adapted constructive features of fluorimeters
    • G01N21/6456Spatial resolved fluorescence measurements; Imaging
    • G01N2021/646Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/8422Investigating thin films, e.g. matrix isolation method

Abstract

A method and apparatus uses photoluminescence to identify defects in one or more specified material layers of a sample. One or more filtering elements are used to filter out predetermined wavelengths of return light emitted from a sample. The predetermined wavelengths are selected such that only return light emitted from one or more specified material layers of the sample is detected. Additionally or alternatively, the wavelength of incident light directed into the sample may be selected to penetrate the sample to a given depth, or to excite only one or more selected material layers in the sample. Accordingly, defect data characteristic of primarily only the one or more specified material layers is generated.
PCT/US2006/024938 2005-07-06 2006-06-27 Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece WO2007008399A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US69685305 true 2005-07-06 2005-07-06
US60/696,853 2005-07-06

Publications (2)

Publication Number Publication Date
WO2007008399A2 true WO2007008399A2 (en) 2007-01-18
WO2007008399A3 true true WO2007008399A3 (en) 2007-12-13

Family

ID=37637675

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/024938 WO2007008399A3 (en) 2005-07-06 2006-06-27 Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece

Country Status (2)

Country Link
US (1) US7504642B2 (en)
WO (1) WO2007008399A3 (en)

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US20070000434A1 (en) * 2005-06-30 2007-01-04 Accent Optical Technologies, Inc. Apparatuses and methods for detecting defects in semiconductor workpieces
US7446321B2 (en) * 2005-07-06 2008-11-04 Nanometrics Incorporated Differential wavelength photoluminescence for non-contact measuring of contaminants and defects located below the surface of a wafer or other workpiece
WO2007008399A3 (en) 2005-07-06 2007-12-13 Accent Optical Tech Inc Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece
US20070008526A1 (en) * 2005-07-08 2007-01-11 Andrzej Buczkowski Apparatus and method for non-contact assessment of a constituent in semiconductor workpieces
JP4778755B2 (en) * 2005-09-09 2011-09-21 株式会社日立ハイテクノロジーズ Defect inspection method and apparatus using the same
JP2009512198A (en) * 2005-10-11 2009-03-19 ビーティー イメージング ピーティーワイ リミテッド Method and system for inspecting an indirect bandgap semiconductor structure
US20070176119A1 (en) * 2006-01-30 2007-08-02 Accent Optical Technologies, Inc. Apparatuses and methods for analyzing semiconductor workpieces
DE102008044881A1 (en) * 2008-08-29 2010-06-10 Albert-Ludwigs-Universität Freiburg Methods of measurement of a semiconductor structure
US8330946B2 (en) * 2009-12-15 2012-12-11 Nanometrics Incorporated Silicon filter for photoluminescence metrology
US8629411B2 (en) 2010-07-13 2014-01-14 First Solar, Inc. Photoluminescence spectroscopy
US9209096B2 (en) * 2010-07-30 2015-12-08 First Solar, Inc Photoluminescence measurement
DE112012002619T5 (en) 2011-06-24 2014-04-17 Kla-Tencor Corp. Method and apparatus for inspection of semiconductor light emitting elements by means of photoluminescent imaging
US20140212020A1 (en) * 2011-08-12 2014-07-31 Bt Imaging Pty Ltd Photoluminescence imaging of doping variations in semiconductor wafers
KR20140122608A (en) * 2013-04-10 2014-10-20 삼성전자주식회사 Apparatus and method for extracting depth information of defect, and method for improving semiconductor process using the depth information of defect
KR20140142568A (en) * 2013-06-04 2014-12-12 삼성디스플레이 주식회사 Method for inspecting polycrystal silicon layer
US9354177B2 (en) * 2013-06-26 2016-05-31 Kla-Tencor Corporation System and method for defect detection and photoluminescence measurement of a sample
US20150123014A1 (en) * 2013-11-01 2015-05-07 Kla-Tencor Corporation Determining Information for Defects on Wafers
US9875536B2 (en) * 2015-03-31 2018-01-23 Kla-Tencor Corp. Sub-pixel and sub-resolution localization of defects on patterned wafers
US20160327485A1 (en) * 2015-05-04 2016-11-10 Semilab SDI LLC Micro photoluminescence imaging with optical filtering
US9564854B2 (en) 2015-05-06 2017-02-07 Sunpower Corporation Photonic degradation monitoring for semiconductor devices

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Also Published As

Publication number Publication date Type
WO2007008399A2 (en) 2007-01-18 application
US20070008518A1 (en) 2007-01-11 application
US7504642B2 (en) 2009-03-17 grant

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