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WO2007002151A3 - Packaging technique for the fabrication of polarized light emitting diodes - Google Patents

Packaging technique for the fabrication of polarized light emitting diodes

Info

Publication number
WO2007002151A3
WO2007002151A3 PCT/US2006/024078 US2006024078W WO2007002151A3 WO 2007002151 A3 WO2007002151 A3 WO 2007002151A3 US 2006024078 W US2006024078 W US 2006024078W WO 2007002151 A3 WO2007002151 A3 WO 2007002151A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
package
led
marker
die
polarization
Prior art date
Application number
PCT/US2006/024078
Other languages
French (fr)
Other versions
WO2007002151A2 (en )
Inventor
Steven P Denbaars
Hisashi Masui
Shuji Nakamura
Original Assignee
Steven P Denbaars
Hisashi Masui
Shuji Nakamura
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of optical devices, e.g. polarisers, reflectors or illuminating devices, with the cell
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of optical devices, e.g. polarisers, reflectors or illuminating devices, with the cell
    • G02F1/1336Illuminating devices
    • G02F1/13362Illuminating devices providing polarised light, e.g. by converting a polarisation component into another one
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54426Marks applied to semiconductor devices or parts for alignment
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/54486Located on package parts, e.g. encapsulation, leads, package substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

A polarized light emitting diode (LED) (500) includes a marker (504) indicating a polarization direction. A package (506) for the LED also includes a marker (508) indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to the package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.
PCT/US2006/024078 2005-06-21 2006-06-21 Packaging technique for the fabrication of polarized light emitting diodes WO2007002151A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US69251405 true 2005-06-21 2005-06-21
US60/692,514 2005-06-21

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008518342A JP5301988B2 (en) 2005-06-21 2006-06-21 Packaging technology of fabricating polarization-emitting diode
EP20060785239 EP1905088A4 (en) 2005-06-21 2006-06-21 Packaging technique for the fabrication of polarized light emitting diodes
KR20087001554A KR101310332B1 (en) 2005-06-21 2006-06-21 Light emitting diode device and method of fabricating the same

Publications (2)

Publication Number Publication Date
WO2007002151A2 true WO2007002151A2 (en) 2007-01-04
WO2007002151A3 true true WO2007002151A3 (en) 2007-06-28

Family

ID=37595773

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/024078 WO2007002151A3 (en) 2005-06-21 2006-06-21 Packaging technique for the fabrication of polarized light emitting diodes

Country Status (5)

Country Link
US (2) US7518159B2 (en)
EP (1) EP1905088A4 (en)
JP (1) JP5301988B2 (en)
KR (1) KR101310332B1 (en)
WO (1) WO2007002151A3 (en)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7518159B2 (en) * 2005-06-21 2009-04-14 The Regents Of The University Of California Packaging technique for the fabrication of polarized light emitting diodes
US7842527B2 (en) * 2006-12-11 2010-11-30 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
JP2009070893A (en) * 2007-09-11 2009-04-02 Rohm Co Ltd Light-emitting device and manufacturing method therefor
JP5263771B2 (en) * 2007-11-12 2013-08-14 学校法人慶應義塾 Surface emitting device and a polarized light source
JP2009123803A (en) * 2007-11-13 2009-06-04 Sanyo Electric Co Ltd Light emitting diode device
US8125579B2 (en) * 2007-12-19 2012-02-28 Texas Instruments Incorporated Polarized light emitting diode and use thereof
WO2009097611A1 (en) * 2008-02-01 2009-08-06 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
KR20100129280A (en) * 2008-02-01 2010-12-08 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation
US20110180781A1 (en) * 2008-06-05 2011-07-28 Soraa, Inc Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN
JP2010027924A (en) * 2008-07-22 2010-02-04 Sumitomo Electric Ind Ltd Group iii nitride light-emitting diode
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US20100032695A1 (en) * 2008-08-05 2010-02-11 The Regents Of The University Of California Tunable white light based on polarization sensitive light-emitting diodes
US8247886B1 (en) * 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
JP4815013B2 (en) * 2009-04-09 2011-11-16 パナソニック株式会社 Nitride-based semiconductor light-emitting device, a lighting device, a method of manufacturing a liquid crystal display device and a lighting device
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
WO2010141943A1 (en) * 2009-06-05 2010-12-09 The Regents Of The University Of California LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
KR101368906B1 (en) 2009-09-18 2014-02-28 소라, 인코포레이티드 Power light emitting diode and method with current density operation
EP2472608B1 (en) 2009-12-09 2013-09-18 Panasonic Corporation Lighting device with nitride-based semiconductor light-emitting elements, liquid crystal display device
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110186874A1 (en) * 2010-02-03 2011-08-04 Soraa, Inc. White Light Apparatus and Method
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8293551B2 (en) 2010-06-18 2012-10-23 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8313964B2 (en) 2010-06-18 2012-11-20 Soraa, Inc. Singulation method and resulting device of thick gallium and nitrogen containing substrates
US20110182056A1 (en) * 2010-06-23 2011-07-28 Soraa, Inc. Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
WO2013134432A1 (en) 2012-03-06 2013-09-12 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
DE102012217967A1 (en) 2012-10-01 2014-04-03 Carl Zeiss Microscopy Gmbh Confocal microscope with freely adjustable sample scanning
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US20030089899A1 (en) * 2000-08-22 2003-05-15 Lieber Charles M. Nanoscale wires and related devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04291474A (en) * 1991-03-20 1992-10-15 Tokyo Electric Co Ltd Bar code scanner
JPH06291155A (en) * 1993-03-31 1994-10-18 Victor Co Of Japan Ltd Die bonding equipment
JP3258221B2 (en) * 1995-12-26 2002-02-18 沖電気工業株式会社 Recognition mark and its forming method for positioning, recognition mark and the light emitting portion of the formation of the combined mask alignment method using a recognition mark for alignment
JP3816176B2 (en) * 1996-02-23 2006-08-30 富士通株式会社 The semiconductor light emitting element and an optical semiconductor device
JP3599917B2 (en) * 1996-09-30 2004-12-08 三洋電機株式会社 Semiconductor laser device
JP3235571B2 (en) * 1998-09-03 2001-12-04 日本電気株式会社 Method for measuring the relative position of the positioning mark and the active layer
JP4296644B2 (en) * 1999-01-29 2009-07-15 豊田合成株式会社 Light emitting diode
WO2001082386A1 (en) * 2000-04-24 2001-11-01 Rohm Co., Ltd. Edge-emitting light-emitting semiconductor device and method of manufacture thereof
JP3722693B2 (en) * 2000-11-28 2005-11-30 シャープ株式会社 The semiconductor laser device and a manufacturing method thereof
US7808011B2 (en) 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US7365370B2 (en) * 2004-06-18 2008-04-29 Chi Mei Optoelectronics Corp Light emitting diode package
US7518159B2 (en) * 2005-06-21 2009-04-14 The Regents Of The University Of California Packaging technique for the fabrication of polarized light emitting diodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US20030089899A1 (en) * 2000-08-22 2003-05-15 Lieber Charles M. Nanoscale wires and related devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1905088A2 *

Also Published As

Publication number Publication date Type
JP5301988B2 (en) 2013-09-25 grant
US7723746B2 (en) 2010-05-25 grant
EP1905088A4 (en) 2012-11-21 application
JP2008544552A (en) 2008-12-04 application
KR20080030033A (en) 2008-04-03 application
KR101310332B1 (en) 2013-09-23 grant
WO2007002151A2 (en) 2007-01-04 application
US20090065798A1 (en) 2009-03-12 application
US20060284206A1 (en) 2006-12-21 application
US7518159B2 (en) 2009-04-14 grant
EP1905088A2 (en) 2008-04-02 application

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