WO2006130838A3 - Methods and apparatus for incorporating nitrogen in oxide films - Google Patents
Methods and apparatus for incorporating nitrogen in oxide films Download PDFInfo
- Publication number
- WO2006130838A3 WO2006130838A3 PCT/US2006/021498 US2006021498W WO2006130838A3 WO 2006130838 A3 WO2006130838 A3 WO 2006130838A3 US 2006021498 W US2006021498 W US 2006021498W WO 2006130838 A3 WO2006130838 A3 WO 2006130838A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- methods
- oxide films
- process chamber
- incorporating nitrogen
- plasma
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31641—Deposition of Zirconium oxides, e.g. ZrO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06760661A EP1900001A2 (en) | 2005-06-02 | 2006-06-02 | Methods and apparatus for incorporating nitrogen in oxide films |
CN2006800284717A CN101238540B (en) | 2005-06-02 | 2006-06-02 | Methods and apparatus for incorporating nitrogen in oxide films |
KR1020077030121A KR100931771B1 (en) | 2005-06-02 | 2006-06-02 | Method and apparatus for introducing nitrogen into an oxide film |
JP2008514911A JP5371425B2 (en) | 2005-06-02 | 2006-06-02 | Method and apparatus for incorporating nitrogen into an oxide film |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68709605P | 2005-06-02 | 2005-06-02 | |
US60/687,096 | 2005-06-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006130838A2 WO2006130838A2 (en) | 2006-12-07 |
WO2006130838A3 true WO2006130838A3 (en) | 2007-03-22 |
Family
ID=37482349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/021498 WO2006130838A2 (en) | 2005-06-02 | 2006-06-02 | Methods and apparatus for incorporating nitrogen in oxide films |
Country Status (6)
Country | Link |
---|---|
US (4) | US7902050B2 (en) |
EP (1) | EP1900001A2 (en) |
JP (1) | JP5371425B2 (en) |
KR (1) | KR100931771B1 (en) |
CN (1) | CN101238540B (en) |
WO (1) | WO2006130838A2 (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
KR100931771B1 (en) | 2005-06-02 | 2009-12-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Method and apparatus for introducing nitrogen into an oxide film |
US7601404B2 (en) * | 2005-06-09 | 2009-10-13 | United Microelectronics Corp. | Method for switching decoupled plasma nitridation processes of different doses |
US7837838B2 (en) | 2006-03-09 | 2010-11-23 | Applied Materials, Inc. | Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus |
US7645710B2 (en) | 2006-03-09 | 2010-01-12 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
US7678710B2 (en) * | 2006-03-09 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
JPWO2007111348A1 (en) * | 2006-03-28 | 2009-08-13 | 株式会社日立国際電気 | Substrate processing equipment |
WO2008039845A2 (en) | 2006-09-26 | 2008-04-03 | Applied Materials, Inc. | Fluorine plasma treatment of high-k gate stack for defect passivation |
US8137463B2 (en) * | 2007-12-19 | 2012-03-20 | Applied Materials, Inc. | Dual zone gas injection nozzle |
US7871942B2 (en) | 2008-03-27 | 2011-01-18 | Applied Materials, Inc. | Methods for manufacturing high dielectric constant film |
US8481433B2 (en) * | 2009-03-31 | 2013-07-09 | Applied Materials, Inc. | Methods and apparatus for forming nitrogen-containing layers |
JP5375362B2 (en) * | 2009-06-24 | 2013-12-25 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
JPWO2011125703A1 (en) * | 2010-03-31 | 2013-07-08 | 東京エレクトロン株式会社 | Plasma nitriding method |
US9054048B2 (en) | 2011-07-05 | 2015-06-09 | Applied Materials, Inc. | NH3 containing plasma nitridation of a layer on a substrate |
US20130134373A1 (en) * | 2011-11-28 | 2013-05-30 | Intermolecular, Inc. | Nonvolatile resistive memory element with a novel switching layer |
US9496132B2 (en) * | 2012-03-20 | 2016-11-15 | Translucent, Inc. | Nucleation of III-N on REO templates |
JP6022785B2 (en) | 2012-03-26 | 2016-11-09 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, and program |
US9828672B2 (en) | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
US10103027B2 (en) | 2016-06-20 | 2018-10-16 | Applied Materials, Inc. | Hydrogenation and nitridization processes for modifying effective oxide thickness of a film |
US10510545B2 (en) | 2016-06-20 | 2019-12-17 | Applied Materials, Inc. | Hydrogenation and nitridization processes for modifying effective oxide thickness of a film |
US10760158B2 (en) * | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
CN108766870B (en) * | 2018-05-31 | 2020-06-30 | 武汉华星光电技术有限公司 | Manufacturing method of LTPS TFT substrate and LTPS TFT substrate |
US10535524B1 (en) | 2019-03-11 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tuning threshold voltage through meta stable plasma treatment |
WO2021150625A1 (en) | 2020-01-23 | 2021-07-29 | Applied Materials, Inc. | Method of cleaning a structure and method of depositiing a capping layer in a structure |
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WO1999003312A1 (en) * | 1997-07-11 | 1999-01-21 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
WO2000022664A1 (en) * | 1998-10-14 | 2000-04-20 | Applied Materials, Inc. | Post deposition treatment of dielectric films for interface control |
Family Cites Families (20)
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JPH02215126A (en) * | 1989-02-16 | 1990-08-28 | Toshiba Corp | Dry processing of semiconductor wafer and processing device therefor |
JPH04354330A (en) * | 1991-05-31 | 1992-12-08 | Victor Co Of Japan Ltd | Device and method for dry etching |
JPH0897157A (en) * | 1994-09-29 | 1996-04-12 | Sony Corp | Method for forming film on semiconductor wafer |
US5843239A (en) * | 1997-03-03 | 1998-12-01 | Applied Materials, Inc. | Two-step process for cleaning a substrate processing chamber |
TW460943B (en) * | 1997-06-11 | 2001-10-21 | Applied Materials Inc | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions |
US6274058B1 (en) * | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
JP2000323475A (en) * | 1999-05-11 | 2000-11-24 | Nippon Asm Kk | Film forming method in apparatus for forming film on substrate |
JP4382219B2 (en) * | 1999-10-29 | 2009-12-09 | 日本電気株式会社 | Method of hydrogenating polycrystalline silicon film and method of manufacturing thin film transistor |
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US20020168847A1 (en) * | 2001-05-09 | 2002-11-14 | Applied Materials, Inc. | Methods of forming a nitridated surface on a metallic layer and products produced thereby |
US6626188B2 (en) * | 2001-06-28 | 2003-09-30 | International Business Machines Corporation | Method for cleaning and preconditioning a chemical vapor deposition chamber dome |
JP2003109941A (en) * | 2001-09-28 | 2003-04-11 | Canon Inc | Plasma treatment device and surface treatment method |
JP2003188254A (en) * | 2001-12-18 | 2003-07-04 | Hitachi Ltd | Semiconductor device and manufacturing method therefor |
JP2005045075A (en) * | 2003-07-23 | 2005-02-17 | Hitachi Kokusai Electric Inc | Method for substrate treatment |
JP2005150228A (en) * | 2003-11-12 | 2005-06-09 | Matsushita Electric Ind Co Ltd | Method of manufacturing semiconductor device |
JP2006005287A (en) * | 2004-06-21 | 2006-01-05 | Hitachi Kokusai Electric Inc | Substrate treatment method |
KR100931771B1 (en) | 2005-06-02 | 2009-12-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Method and apparatus for introducing nitrogen into an oxide film |
-
2006
- 2006-06-02 KR KR1020077030121A patent/KR100931771B1/en not_active IP Right Cessation
- 2006-06-02 EP EP06760661A patent/EP1900001A2/en not_active Withdrawn
- 2006-06-02 JP JP2008514911A patent/JP5371425B2/en active Active
- 2006-06-02 CN CN2006800284717A patent/CN101238540B/en active Active
- 2006-06-02 WO PCT/US2006/021498 patent/WO2006130838A2/en active Application Filing
- 2006-06-02 US US11/446,444 patent/US7902050B2/en active Active
- 2006-07-25 US US11/493,193 patent/US7913645B2/en active Active
-
2011
- 2011-03-25 US US13/072,177 patent/US8375892B2/en active Active
-
2013
- 2013-02-04 US US13/759,020 patent/US8658522B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1999003312A1 (en) * | 1997-07-11 | 1999-01-21 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
WO2000022664A1 (en) * | 1998-10-14 | 2000-04-20 | Applied Materials, Inc. | Post deposition treatment of dielectric films for interface control |
Also Published As
Publication number | Publication date |
---|---|
KR100931771B1 (en) | 2009-12-14 |
US20130149468A1 (en) | 2013-06-13 |
US20110168093A1 (en) | 2011-07-14 |
WO2006130838A2 (en) | 2006-12-07 |
US8658522B2 (en) | 2014-02-25 |
KR20080014073A (en) | 2008-02-13 |
CN101238540B (en) | 2010-12-08 |
EP1900001A2 (en) | 2008-03-19 |
US20070111458A1 (en) | 2007-05-17 |
US8375892B2 (en) | 2013-02-19 |
US7913645B2 (en) | 2011-03-29 |
US20070141856A1 (en) | 2007-06-21 |
JP5371425B2 (en) | 2013-12-18 |
CN101238540A (en) | 2008-08-06 |
JP2008543091A (en) | 2008-11-27 |
US7902050B2 (en) | 2011-03-08 |
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