WO2006120610A1 - Electroluminescence light source - Google Patents
Electroluminescence light source Download PDFInfo
- Publication number
- WO2006120610A1 WO2006120610A1 PCT/IB2006/051385 IB2006051385W WO2006120610A1 WO 2006120610 A1 WO2006120610 A1 WO 2006120610A1 IB 2006051385 W IB2006051385 W IB 2006051385W WO 2006120610 A1 WO2006120610 A1 WO 2006120610A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- substrate
- light source
- layer
- electroluminescence
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Definitions
- the structure of the second light outcoupling layer must be adapted to the distribution of the angles of incidence.
- the distribution of the angles of incidence on the boundary surface between substrate andair depends very essentially on whether an additional first light outcoupling layer is present between a transparent electrode and a transparent substrate, which layer influences the angular distribution (angle between direction of propagation of the rays of light and the layer normal) of the light.
- a better luminous efficiency (number of light quanta outcoupled from the EL light source relative to the number of light quanta produced in the EL layer) is achieved than in EL light sources with one or more light outcoupling layers not tuned to each other.
- a first light outcoupling layer can improve the light incoupling into the substrate, without an improved light outcoupling from the EL light source being obtained.
- the non-uniform angular distribution has a maximum and an angle range of ⁇ 15 degrees around said maximum comprises more than 70% of the light, preferably more than 80% of the light, particularly preferably more than 90% of the light.
- the more light is coupled into the substrate, whose angles of incidence vary essentially only in a narrow range, the more optimally the second light outcoupling layer can be adapted to the angular distribution.
- the light outcoupling into the substrate can be additionally increased by this specific deviation from the strict periodicity in an ideal grid.
- surface structures of the second light outcoupling layer comprising square pyramidal structures, triangular pyramidal structures, hexagonal pyramidal structures, ellipsoidal dome structures or cone structures are particularly preferable.
- the second light outcoupling layer has a refractive index larger than or equal to that of the substrate, whereby total reflection at the boundary surface between substrate and second light outcoupling layer during light emergence from the substrate is avoided.
- the transparent electrode 4 can comprise, for example, p-doped silicon, Indium-doped Tin Oxide (ITO) or Antimony-doped Tin Oxide (ATO). It is also possible to produce the transparent electrode from an organic material with particularly high electrical conductivity, for example, Poly (3,4 ethylene dioxythiophene) in polystyrene sulfonic acid (PEDT/PSS, Baytron P from the company HC Starck). Preferably, the electrode 4 comprises ITO with a refractive index between 1.6 and 2.0.
- the reflecting electrode 6 itself can be reflecting, for example of a material like aluminum, copper, silver or gold, or can additionally have a reflecting layer structure.
- a further second light outcoupling layer 1 arranged on the substrate 2 at the boundary surface to air and having a surface structure 8 specially adapted to the special angular distribution n( ⁇ ) produced by the first light outcoupling layer 2 leads to an improvement of the outcoupled quantity of light in comparison to an EL light source without light outcoupling layers 3 and 1 or to an EL light source with one or more light outcoupling layers not matched to each other.
- First light outcoupling layers for producing a non-uniform angular distribution of the light outcoupled into the substrate can comprise layers with a local variation of the refractive index or layers of a matrix material with regularly or irregularly arranged centers in the matrix material for the refraction of light, light scattering or light reflection at these centers.
- Such centers can be, for example, air inclusions, defects or phase boundaries in the matrix material or particles in the matrix material or structures of materials having a higher and/or lower refractive index than the matrix material or having a reflecting surface or other centers with similar effect.
- First light outcoupling layers can be produced, for example, by thin film processes like vapor deposition or sputtering, also in combination with masking, lithography and/or etching processes for structuring the first and/or second material or by wet-chemical methods, such as so-termedspin coating with a suspension having statistically distributed particles.
- the first light outcoupling layer 3 can also comprise two or more sub-layers with different material properties. It is favorable if the thickness H 2 of the second light outcoupling layer ranges between 100 nm and 10 ⁇ m.
- the light outcoupling from an electroluminescence light source is optimized, which light source comprises a light outcoupling layer 3 as a scattering layer of a second material 10 with statistically distributed light-reflecting or refractive particles of at least one first material 9, and a second light outcoupling layer 1, which, as a surface structure 8, has an essentially planar surface with channels having steep side walls.
- Effective outcoupling of the part of the light having propagation angles larger than the critical angle is brought about by the channels between the planar areas, the side faces of the channels having a suitable depth and including an angle with the layer normal of the substrate in the range between 20 and 30 degrees.
- a suitable depth of such channels is obtained if the projected surface of all side faces, viewed in the direction of propagation of the rays of light with a large propagation angle ⁇ , is clearly larger than the projected surface of the planar areas.
- the first light outcoupling layer 3 comprises a first material 9, which is arranged in the second material, essentially in a periodic structure of a multiplicity of structural elements, in a plane parallel to the surface of the second light outcoupling layer 3, the structural elements being designed as spatial bodies, see Fig. 2.
- the structural elements can be arranged, as shown in Fig. 2, in a grid-like manner at the boundary surface between first light outcoupling layer 3 and substrate 2 or within the first light outcoupling layer 3.
- the periodic structure represents an optical grid, whose properties can be adapted, by a person skilled in the art varying the periodic structure, to the wavelength of the light emitted by the EL layer, to the layer structure and to the optical properties of the substrate.
- An example of embodiment of the electroluminescence light source in accordance with the invention comprises a first light outcoupling layer for producing a nonuniform angular distribution of the light when the light enters into the substrate, wherein the thickness H 2 of the first light outcoupling layer amounts to 700 nm, the refractive indices U 1 and n 2 of the first and second materials of the first light outcoupling layer amount to 1.42 and 1.94, respectively, the height H 1 of the structural elements in the first light outcoupling layer amounts to 220 nm and the average distance a0 between the structural elements amounts to 650 nm.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/913,876 US20080197764A1 (en) | 2005-05-12 | 2006-05-03 | Electroluminescence Light Source |
EP06744859A EP1883977A1 (en) | 2005-05-12 | 2006-05-03 | Electroluminescence light source |
JP2008510691A JP2008541368A (en) | 2005-05-12 | 2006-05-03 | Electroluminescence light source |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05103973.3 | 2005-05-12 | ||
EP05103973 | 2005-05-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006120610A1 true WO2006120610A1 (en) | 2006-11-16 |
Family
ID=36809177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2006/051385 WO2006120610A1 (en) | 2005-05-12 | 2006-05-03 | Electroluminescence light source |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080197764A1 (en) |
EP (1) | EP1883977A1 (en) |
JP (1) | JP2008541368A (en) |
KR (1) | KR20080010458A (en) |
CN (1) | CN101176214A (en) |
TW (1) | TW200713640A (en) |
WO (1) | WO2006120610A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009155899A1 (en) * | 2008-06-27 | 2009-12-30 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip |
FR2964254A1 (en) * | 2010-08-30 | 2012-03-02 | Saint Gobain | ORGANIC ELECTROLUMINESCENT DIODE DEVICE HOLDER, ORGANIC ELECTROLUMINESCENT DIODE DEVICE, AND MANUFACTURING METHOD THEREOF |
EP2001060A3 (en) * | 2007-06-08 | 2013-03-06 | OSRAM Opto Semiconductors GmbH | Opto-electronic component |
EP2838130A4 (en) * | 2012-04-13 | 2015-08-12 | Asahi Kasei E Materials Corp | Light extraction body for semiconductor light-emitting element, and light-emitting element |
US9172057B2 (en) | 2011-06-30 | 2015-10-27 | Osram Oled Gmbh | Encapsulation structure for an opto-electronic component |
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CN101694868B (en) * | 2009-09-29 | 2013-05-08 | 深圳丹邦投资集团有限公司 | Organic light-emitting device and manufacture method of light extraction structure thereof |
JP5258817B2 (en) * | 2010-03-02 | 2013-08-07 | 株式会社東芝 | LIGHTING DEVICE AND MANUFACTURING METHOD THEREOF |
JP2012069277A (en) * | 2010-09-21 | 2012-04-05 | Canon Inc | Light-emitting element and image display device using the same |
US9601719B2 (en) * | 2011-08-31 | 2017-03-21 | Oledworks Gmbh | Light source having an outsource device |
JPWO2013035299A1 (en) * | 2011-09-07 | 2015-03-23 | パナソニックIpマネジメント株式会社 | Light emitting device and light sheet |
JP5919821B2 (en) * | 2011-12-28 | 2016-05-18 | 大日本印刷株式会社 | Optical substrate, method for manufacturing the same, and light emitting display device |
JP6471905B2 (en) * | 2013-04-12 | 2019-02-20 | パナソニックIpマネジメント株式会社 | Light emitting device |
WO2014188631A1 (en) * | 2013-05-21 | 2014-11-27 | パナソニックIpマネジメント株式会社 | Light emitting apparatus |
WO2014196053A1 (en) * | 2013-06-06 | 2014-12-11 | パイオニア株式会社 | Light scattering film, light emitting element, light scattering film manufacturing method, and light emitting element manufacturing method |
JP6255235B2 (en) * | 2013-12-20 | 2017-12-27 | 株式会社ディスコ | Light emitting chip |
CN104091898B (en) * | 2014-07-30 | 2018-06-01 | 上海天马有机发光显示技术有限公司 | Organic electroluminescence display panel and its manufacturing method |
CN104638078B (en) * | 2015-03-05 | 2017-05-10 | 天津三安光电有限公司 | Light emitting diode and manufacturing method for same |
CN105870288B (en) * | 2016-04-27 | 2018-08-14 | 天津三安光电有限公司 | Light emitting diode and preparation method thereof |
CN107195245B (en) * | 2017-05-22 | 2020-07-14 | 茆胜 | Micro display and light cone coupling structure and manufacturing method thereof |
SI3407400T1 (en) * | 2017-05-24 | 2023-10-30 | Odelo Gmbh | Method for treating the surfaces of oleds intended for use as light sources in vehicle lights and light source with at least one correspondingly treated oled as light source |
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US20040041164A1 (en) * | 1999-12-03 | 2004-03-04 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
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JP2004513483A (en) * | 2000-11-02 | 2004-04-30 | スリーエム イノベイティブ プロパティズ カンパニー | Bright and contrast enhanced direct-view luminescent display |
JP4378891B2 (en) * | 2001-03-15 | 2009-12-09 | パナソニック電工株式会社 | Active matrix light emitting device and manufacturing method thereof |
KR100789142B1 (en) * | 2002-01-18 | 2007-12-28 | 삼성전자주식회사 | Light guided panel and thin type lcd using the same and sheet-less lcd using thereof |
US6710926B2 (en) * | 2002-04-10 | 2004-03-23 | The Regents Of The University Of California | Cylindrical microlens with an internally reflecting surface and a method of fabrication |
JP2004247077A (en) * | 2003-02-12 | 2004-09-02 | Semiconductor Energy Lab Co Ltd | Light-emitting device and its manufacturing method |
US20040217702A1 (en) * | 2003-05-02 | 2004-11-04 | Garner Sean M. | Light extraction designs for organic light emitting diodes |
JP2005063926A (en) * | 2003-06-27 | 2005-03-10 | Toyota Industries Corp | Light emitting device |
JP2005063838A (en) * | 2003-08-13 | 2005-03-10 | Toshiba Matsushita Display Technology Co Ltd | Optical device and organic el display device |
US6997595B2 (en) * | 2003-08-18 | 2006-02-14 | Eastman Kodak Company | Brightness enhancement article having trapezoidal prism surface |
US7385226B2 (en) * | 2004-03-24 | 2008-06-10 | Epistar Corporation | Light-emitting device |
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2006
- 2006-05-03 JP JP2008510691A patent/JP2008541368A/en active Pending
- 2006-05-03 CN CNA2006800162832A patent/CN101176214A/en active Pending
- 2006-05-03 WO PCT/IB2006/051385 patent/WO2006120610A1/en not_active Application Discontinuation
- 2006-05-03 US US11/913,876 patent/US20080197764A1/en not_active Abandoned
- 2006-05-03 EP EP06744859A patent/EP1883977A1/en not_active Withdrawn
- 2006-05-03 KR KR1020077028947A patent/KR20080010458A/en not_active Application Discontinuation
- 2006-05-09 TW TW095116436A patent/TW200713640A/en unknown
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US20040041164A1 (en) * | 1999-12-03 | 2004-03-04 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
Non-Patent Citations (2)
Title |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2001060A3 (en) * | 2007-06-08 | 2013-03-06 | OSRAM Opto Semiconductors GmbH | Opto-electronic component |
WO2009155899A1 (en) * | 2008-06-27 | 2009-12-30 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip |
TWI415296B (en) * | 2008-06-27 | 2013-11-11 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip |
FR2964254A1 (en) * | 2010-08-30 | 2012-03-02 | Saint Gobain | ORGANIC ELECTROLUMINESCENT DIODE DEVICE HOLDER, ORGANIC ELECTROLUMINESCENT DIODE DEVICE, AND MANUFACTURING METHOD THEREOF |
WO2012028809A1 (en) * | 2010-08-30 | 2012-03-08 | Saint-Gobain Glass France | Support for organic-light-emitting-diode device, such an organic-light-emitting-diode device and process for manufacturing said device |
US9172057B2 (en) | 2011-06-30 | 2015-10-27 | Osram Oled Gmbh | Encapsulation structure for an opto-electronic component |
EP2838130A4 (en) * | 2012-04-13 | 2015-08-12 | Asahi Kasei E Materials Corp | Light extraction body for semiconductor light-emitting element, and light-emitting element |
Also Published As
Publication number | Publication date |
---|---|
TW200713640A (en) | 2007-04-01 |
CN101176214A (en) | 2008-05-07 |
US20080197764A1 (en) | 2008-08-21 |
EP1883977A1 (en) | 2008-02-06 |
KR20080010458A (en) | 2008-01-30 |
JP2008541368A (en) | 2008-11-20 |
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