WO2006085348A2 - A PROCESS FOR LARGE-SCALE PRODUCTION OF CdTe/CdS THIN FILM SOLAR CELLS, WITHOUT THE USE OF CdCl2 - Google Patents
A PROCESS FOR LARGE-SCALE PRODUCTION OF CdTe/CdS THIN FILM SOLAR CELLS, WITHOUT THE USE OF CdCl2 Download PDFInfo
- Publication number
- WO2006085348A2 WO2006085348A2 PCT/IT2006/000053 IT2006000053W WO2006085348A2 WO 2006085348 A2 WO2006085348 A2 WO 2006085348A2 IT 2006000053 W IT2006000053 W IT 2006000053W WO 2006085348 A2 WO2006085348 A2 WO 2006085348A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cdte
- film
- layer
- cds
- process according
- Prior art date
Links
- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 90
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000008569 process Effects 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000011031 large-scale manufacturing process Methods 0.000 title claims abstract description 11
- 239000010408 film Substances 0.000 claims abstract description 66
- 210000004027 cell Anatomy 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 19
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000460 chlorine Substances 0.000 claims abstract description 15
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 15
- 239000007787 solid Substances 0.000 claims abstract description 6
- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 claims abstract 3
- 238000010494 dissociation reaction Methods 0.000 claims abstract 2
- 230000005593 dissociations Effects 0.000 claims abstract 2
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 229910017629 Sb2Te3 Inorganic materials 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000004913 activation Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000859 sublimation Methods 0.000 description 6
- 230000008022 sublimation Effects 0.000 description 6
- 238000001994 activation Methods 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 235000012149 noodles Nutrition 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005329 float glass Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VOPWNXZWBYDODV-UHFFFAOYSA-N Chlorodifluoromethane Chemical compound FC(F)Cl VOPWNXZWBYDODV-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 230000009965 odorless effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011833 salt mixture Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- CdTe has to be etched in a solution of Br-methanol or in a mixture of nitric and phosphoric acid .
- Etching is necessary as CdO or CdTeO 3 are generally formed on the CdTe surface .
- CdO and/or CdTeO 3 have to be removed in order to make a good back contact onto CdTe .
- etching produces a Te-rich surface , the formation of an ohmic contact when a metal is deposited on top of CdTe is facilitated .
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2006213445A AU2006213445B2 (en) | 2005-02-08 | 2006-02-02 | A process for large-scale production of CdTe/CdS thin film solar cells, without the use of CdCl2 |
JP2007553786A JP4847477B2 (en) | 2005-02-08 | 2006-02-02 | Method for mass production of CdTe / CdS thin film solar cells without using CdCl 2 |
EP06711407A EP1846958A2 (en) | 2005-02-08 | 2006-02-02 | A PROCESS FOR LARGE-SCALE PRODUCTION OF CDTE/CDS THIN FILM SOLAR CELLS, WITHOUT THE USE OF CDCl2 |
CA002601749A CA2601749A1 (en) | 2005-02-08 | 2006-02-02 | A process for large-scale production of cdte/cds thin film solar cells, without the use of cdc12 |
US11/884,055 US20080149179A1 (en) | 2005-02-08 | 2006-02-02 | Process for Large-Scale Production of Cdte/Cds Thin Film Solar Cells, Without the Use of Cdci2 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT000002A ITLU20050002A1 (en) | 2005-02-08 | 2005-02-08 | A NEW PROCESS FOR THE TREATMENT IN CHLORINE ENVIRONMENT OF SOLID FILM CELLS OF CdTe / CdS without the use of CdC12. |
ITLU2005A000002 | 2005-02-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006085348A2 true WO2006085348A2 (en) | 2006-08-17 |
WO2006085348A3 WO2006085348A3 (en) | 2006-11-02 |
Family
ID=36604230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IT2006/000053 WO2006085348A2 (en) | 2005-02-08 | 2006-02-02 | A PROCESS FOR LARGE-SCALE PRODUCTION OF CdTe/CdS THIN FILM SOLAR CELLS, WITHOUT THE USE OF CdCl2 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20080149179A1 (en) |
EP (1) | EP1846958A2 (en) |
JP (1) | JP4847477B2 (en) |
CN (1) | CN100499182C (en) |
AU (1) | AU2006213445B2 (en) |
CA (1) | CA2601749A1 (en) |
IT (1) | ITLU20050002A1 (en) |
WO (1) | WO2006085348A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009001389A1 (en) * | 2007-06-28 | 2008-12-31 | Solar Systems & Equipments S.R.L. | Method for the formation of a non-rectifying back-contact in a cdte /cds thin film solar cell |
WO2011045728A1 (en) | 2009-10-13 | 2011-04-21 | Arendi S.P.A. | Method for the activation of cdte thin films for the application in cdte/cds type thin film solar cells |
EP2383363A1 (en) * | 2010-04-29 | 2011-11-02 | PrimeStar Solar, Inc | Cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices and methods of their manufacture |
ES2527976A1 (en) * | 2013-08-02 | 2015-02-02 | Universidad Autónoma de Madrid | System for the manufacture of multicapas for solar cells and procedure for the manufacture of these (Machine-translation by Google Translate, not legally binding) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITMI20081949A1 (en) * | 2008-11-05 | 2010-05-06 | Matteo Paolo Bogana | ACTIVATION PROCESS OF CADMIUM TELLURUR FILM FOR PHOTOVOLTAIC TECHNOLOGIES |
EP2377166A4 (en) * | 2008-12-18 | 2015-06-24 | First Solar Inc | Photovoltaic devices including back metal contacts |
CN101859809B (en) * | 2009-04-09 | 2012-08-15 | 中国科学院物理研究所 | Solar cell encapsulation structure and preparation method thereof |
CN101640233B (en) * | 2009-08-21 | 2011-11-30 | 成都中光电阿波罗太阳能有限公司 | Device for producing CdS/CdTe solar cell by magnetron sputtering method |
US20110143489A1 (en) * | 2009-12-11 | 2011-06-16 | General Electric Company | Process for making thin film solar cell |
US8252619B2 (en) * | 2010-04-23 | 2012-08-28 | Primestar Solar, Inc. | Treatment of thin film layers photovoltaic module manufacture |
FR2977372B1 (en) * | 2011-06-30 | 2015-12-18 | Soc Fr Detecteurs Infrarouges Sofradir | METHOD FOR PRODUCING AN ELECTRO-MAGNETIC RADIATION DETECTOR AND SENSOR OBTAINED THEREBY |
US10090431B2 (en) | 2013-03-12 | 2018-10-02 | New Jersey Institute Of Technology | System and method for thin film photovoltaic modules and back contact for thin solar cells |
US9093599B2 (en) | 2013-07-26 | 2015-07-28 | First Solar, Inc. | Vapor deposition apparatus for continuous deposition of multiple thin film layers on a substrate |
CN104425653B (en) * | 2013-08-30 | 2017-11-21 | 中国建材国际工程集团有限公司 | Additional bottom for thin-layer solar cell |
CN106206244A (en) * | 2015-04-29 | 2016-12-07 | 中国建材国际工程集团有限公司 | The method that the CdTe layer of CdTe thin-layer solar cell is nursed one's health |
US11710799B2 (en) * | 2018-03-22 | 2023-07-25 | Alliance For Sustainable Energy, Llc | Controlled thermomechanical delamination of thin films |
DE102018113251B4 (en) * | 2018-06-04 | 2021-12-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for manufacturing a CdTe solar cell |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040248340A1 (en) * | 2001-10-05 | 2004-12-09 | Nicola Romeo | Process for large-scale production of cdte/cds thin film solar cells |
Family Cites Families (10)
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US4650921A (en) * | 1985-10-24 | 1987-03-17 | Atlantic Richfield Company | Thin film cadmium telluride solar cell |
DE4132882C2 (en) * | 1991-10-03 | 1996-05-09 | Antec Angewandte Neue Technolo | Process for the production of pn CdTe / CdS thin-film solar cells |
US5501744A (en) * | 1992-01-13 | 1996-03-26 | Photon Energy, Inc. | Photovoltaic cell having a p-type polycrystalline layer with large crystals |
US5296640A (en) * | 1992-09-15 | 1994-03-22 | E. I. Du Pont De Nemours And Company | Process for preparing perhaloacyl chlorides |
US5557146A (en) * | 1993-07-14 | 1996-09-17 | University Of South Florida | Ohmic contact using binder paste with semiconductor material dispersed therein |
US5534107A (en) * | 1994-06-14 | 1996-07-09 | Fsi International | UV-enhanced dry stripping of silicon nitride films |
CN1055792C (en) * | 1995-07-20 | 2000-08-23 | 四川联合大学 | Cadmium telluride solar cell with transition layer |
JPH11195799A (en) * | 1997-12-26 | 1999-07-21 | Matsushita Battery Industrial Co Ltd | Method and system for producing cdte film for solar cell |
US6423565B1 (en) * | 2000-05-30 | 2002-07-23 | Kurt L. Barth | Apparatus and processes for the massproduction of photovotaic modules |
DE50014862D1 (en) * | 2000-07-26 | 2008-01-31 | Antec Solar Energy Ag | Method for activating CdTe thin-film solar cells |
-
2005
- 2005-02-08 IT IT000002A patent/ITLU20050002A1/en unknown
-
2006
- 2006-02-02 US US11/884,055 patent/US20080149179A1/en not_active Abandoned
- 2006-02-02 WO PCT/IT2006/000053 patent/WO2006085348A2/en active Application Filing
- 2006-02-02 JP JP2007553786A patent/JP4847477B2/en not_active Expired - Fee Related
- 2006-02-02 CA CA002601749A patent/CA2601749A1/en not_active Abandoned
- 2006-02-02 EP EP06711407A patent/EP1846958A2/en not_active Withdrawn
- 2006-02-02 AU AU2006213445A patent/AU2006213445B2/en not_active Ceased
- 2006-02-02 CN CNB2006800043195A patent/CN100499182C/en not_active Expired - Fee Related
Patent Citations (1)
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US20040248340A1 (en) * | 2001-10-05 | 2004-12-09 | Nicola Romeo | Process for large-scale production of cdte/cds thin film solar cells |
Non-Patent Citations (2)
Title |
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SUNG HYUN LEE ET AL.: "Polycrystalline sputtered Cd(Zn,Mn)Te films for top cells in PV tandem structures" PHYS. STAT. SOL., vol. 1, no. 4, 5 February 2004 (2004-02-05), pages 1042-1045, XP002388970 Weinheim * |
ZHOU T X ET AL: "VAPOR CHLORIDE TREATMENT OF POLYCRYSTALLINE CDTE/CDS FILMS" WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY. WAIKOLOA, DEC. 5 - 9, 1994, NEW YORK, IEEE, US, vol. VOL. 1 CONF. 1, 5 December 1994 (1994-12-05), pages 103-106, XP000681263 cited in the application * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009001389A1 (en) * | 2007-06-28 | 2008-12-31 | Solar Systems & Equipments S.R.L. | Method for the formation of a non-rectifying back-contact in a cdte /cds thin film solar cell |
WO2011045728A1 (en) | 2009-10-13 | 2011-04-21 | Arendi S.P.A. | Method for the activation of cdte thin films for the application in cdte/cds type thin film solar cells |
EP2383363A1 (en) * | 2010-04-29 | 2011-11-02 | PrimeStar Solar, Inc | Cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices and methods of their manufacture |
ES2527976A1 (en) * | 2013-08-02 | 2015-02-02 | Universidad Autónoma de Madrid | System for the manufacture of multicapas for solar cells and procedure for the manufacture of these (Machine-translation by Google Translate, not legally binding) |
Also Published As
Publication number | Publication date |
---|---|
AU2006213445B2 (en) | 2012-05-24 |
EP1846958A2 (en) | 2007-10-24 |
CA2601749A1 (en) | 2006-08-17 |
JP4847477B2 (en) | 2011-12-28 |
AU2006213445A1 (en) | 2006-08-17 |
JP2008530777A (en) | 2008-08-07 |
ITLU20050002A1 (en) | 2006-08-09 |
CN100499182C (en) | 2009-06-10 |
US20080149179A1 (en) | 2008-06-26 |
CN101116190A (en) | 2008-01-30 |
WO2006085348A3 (en) | 2006-11-02 |
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