WO2006078471A3 - Determining wafer orientation in spectral imaging - Google Patents

Determining wafer orientation in spectral imaging Download PDF

Info

Publication number
WO2006078471A3
WO2006078471A3 PCT/US2006/000445 US2006000445W WO2006078471A3 WO 2006078471 A3 WO2006078471 A3 WO 2006078471A3 US 2006000445 W US2006000445 W US 2006000445W WO 2006078471 A3 WO2006078471 A3 WO 2006078471A3
Authority
WO
WIPO (PCT)
Prior art keywords
spectral imaging
wafer orientation
map
determining wafer
wafer
Prior art date
Application number
PCT/US2006/000445
Other languages
French (fr)
Other versions
WO2006078471A2 (en
Inventor
Scott A Chalmers
Randall S Geels
Original Assignee
Filmetrics Inc
Scott A Chalmers
Randall S Geels
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Filmetrics Inc, Scott A Chalmers, Randall S Geels filed Critical Filmetrics Inc
Publication of WO2006078471A2 publication Critical patent/WO2006078471A2/en
Publication of WO2006078471A3 publication Critical patent/WO2006078471A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
    • G01N21/274—Calibration, base line adjustment, drift correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G01N2021/213—Spectrometric ellipsometry

Abstract

Devices and methods for determining wafer orientation in spectral imaging are described. The devices and methods generate an image of a wafer that includes at least one spectral dimension. One or more properties are determined from the spectral dimension, and a map is generated based on the property. The generated map is compared to at least one other map, and data or information of the comparison is used to locate a region of the wafer, for example a measurement pad or other structure.
PCT/US2006/000445 2005-01-07 2006-01-07 Determining wafer orientation in spectral imaging WO2006078471A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64220205P 2005-01-07 2005-01-07
US60/642,202 2005-01-07

Publications (2)

Publication Number Publication Date
WO2006078471A2 WO2006078471A2 (en) 2006-07-27
WO2006078471A3 true WO2006078471A3 (en) 2007-02-15

Family

ID=36692717

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/000445 WO2006078471A2 (en) 2005-01-07 2006-01-07 Determining wafer orientation in spectral imaging

Country Status (1)

Country Link
WO (1) WO2006078471A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5333049A (en) * 1991-12-06 1994-07-26 Hughes Aircraft Company Apparatus and method for interferometrically measuring the thickness of thin films using full aperture irradiation
US5543919A (en) * 1993-05-14 1996-08-06 Integrated Process Equipment Corp. Apparatus and method for performing high spatial resolution thin film layer thickness metrology
US5659172A (en) * 1995-06-21 1997-08-19 Opal Technologies Ltd. Reliable defect detection using multiple perspective scanning electron microscope images
US5787190A (en) * 1995-06-07 1998-07-28 Advanced Micro Devices, Inc. Method and apparatus for pattern recognition of wafer test bins
US5856871A (en) * 1993-08-18 1999-01-05 Applied Spectral Imaging Ltd. Film thickness mapping using interferometric spectral imaging

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5333049A (en) * 1991-12-06 1994-07-26 Hughes Aircraft Company Apparatus and method for interferometrically measuring the thickness of thin films using full aperture irradiation
US5543919A (en) * 1993-05-14 1996-08-06 Integrated Process Equipment Corp. Apparatus and method for performing high spatial resolution thin film layer thickness metrology
US5856871A (en) * 1993-08-18 1999-01-05 Applied Spectral Imaging Ltd. Film thickness mapping using interferometric spectral imaging
US5787190A (en) * 1995-06-07 1998-07-28 Advanced Micro Devices, Inc. Method and apparatus for pattern recognition of wafer test bins
US5659172A (en) * 1995-06-21 1997-08-19 Opal Technologies Ltd. Reliable defect detection using multiple perspective scanning electron microscope images

Also Published As

Publication number Publication date
WO2006078471A2 (en) 2006-07-27

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