WO2006065046A1 - Thin gallium nitride light emitting diode device - Google Patents
Thin gallium nitride light emitting diode device Download PDFInfo
- Publication number
- WO2006065046A1 WO2006065046A1 PCT/KR2005/004247 KR2005004247W WO2006065046A1 WO 2006065046 A1 WO2006065046 A1 WO 2006065046A1 KR 2005004247 W KR2005004247 W KR 2005004247W WO 2006065046 A1 WO2006065046 A1 WO 2006065046A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- emitting diode
- sub
- sapphire substrate
- substrate
- Prior art date
Links
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 229910002601 GaN Inorganic materials 0.000 title claims description 67
- 239000000758 substrate Substances 0.000 claims abstract description 244
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 128
- 239000010980 sapphire Substances 0.000 claims abstract description 128
- 239000013078 crystal Substances 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims description 88
- 229910052751 metal Inorganic materials 0.000 claims description 88
- 238000001312 dry etching Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 9
- 239000012778 molding material Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000007788 roughening Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 71
- 230000008569 process Effects 0.000 description 20
- 230000017525 heat dissipation Effects 0.000 description 16
- 239000010931 gold Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 238000013459 approach Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- -1 InGaN Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910017750 AgSn Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 206010065929 Cardiovascular insufficiency Diseases 0.000 description 1
- 229910020658 PbSn Inorganic materials 0.000 description 1
- 101150071746 Pbsn gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Definitions
- the sapphire substrate-free thin film type LED shows superior properties to the LED manufactured by the flip-chip bonding technique, because the former LED has a light emitting area of about 90% of the size of chips, while the latter LED has a light emitting area of about 60% of the size of chips.
- FIG. 3 is a flow chart showing the process for manufacturing a unit chip of a thin
- FIG. 7a and 7b are electrode wiring diagrams in the case of n-type ohmic contact metals, wherein only one wire bonding is formed in a large chip and the ohmic contact metals are used as electrode wires;
- FIG. 8 is a schematic cross-sectional view illustrating the structure of surface roughness formed on an n-type GaN layer;
- FIGs. 9a and 9b are schematic sectional views of GaN LEDs manufactured by way of the laser lift-off technique according to the present invention, wherein each LED uses a metal substrate or silicon substrate, and a ceramic or silicon substrate as a sub- mount substrate, respectively.
- a unit chip is in the size of a chip to be processed into a final LED lamp, which cannot be reduced in the following steps any more.
- the size is preferably about 1X1 ⁇ 5X5 mm .
- the size is preferably about 0.2X0.2 ⁇ 1X1 mm .
- the unit chips are preferably arranged periodically at adequate intervals of approximately several hundreds of microns between two adjacent chips, in consideration of the subsequent dicing step and wire bonding step of the sub-mount substrate. Additionally, it is preferable that the interval between two adjacent chips is controlled so as to prevent the unit chips from being placed over the edges of the region in which laser beams are irradiated subsequently for removing the sapphire substrate.
- the n-type ohmic contact metal can be formed only at a position where Au wire bonding of the LED chip 50 will be performed. Otherwise, as shown in FIGs. 7a and 7b, it is possible to decrease the number of wire bondings by forming the n-type ohmic contact metal 60 at a position where the wire bonding will be performed, and by further forming the strip line electrode 65 in addition.
- the ohmic contact point is a position, at which wire bonding is to be performed in the next step, i.e. a location to be connected to a cathode after performing the wire bonding. Therefore, it is different from the ohmic contact strip line.
- FlGs. 7a and 7b show embodiments of electrode wiring lines used to form a single
- FlG. 8 shows the structure of an LED having an n-type GaN layer with a roughened surface.
- the surface can be roughened so as to have the shape of polygonal cone thereon by means of a dry or wet etching treatment, before or after forming the n-type ohmic contact metal.
- the step of forming the roughened surface on the n-type GaN layer is preferably carried out after the step of forming the n-type ohmic contact metal.
- the surface roughening may be formed before the step of forming the n-type ohmic contact metal, if the n-ohmic contact metal may be damaged during the step of the surface roughening.
- the region of the n-type GaN layer, in which the n-type ohmic contact metal has not been formed is coated with a mixture containing epoxy and a material (e.g. TiO powder) having a refractive index of about 2.4, which is transparent under visible light and has a refractive index similar to that of GaN, to a thickness of less than a few microns, so as to induce an effect similar to the roughening of the surface.
- a material e.g. TiO powder
- the above characteristic structure has never been disclosed in the prior art, and can be obtained only by the inventive process comprising the steps of: forming a unit chip from a sapphire wafer, on which the crystal structure of a GaN LED has been grown; bonding at least one unit chip to a sub-mount substrate in such a manner that two adjacent unit chips are spaced apart from each other; and removing the sapphire substrate by means of laser. Additionally, according to the above process, the sapphire wafer, on which the crystal structure of a GaN LED has grown, is split into a unit chip, before the removal of the sapphire substrate.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20040105063 | 2004-12-13 | ||
KR10-2004-0105063 | 2004-12-13 | ||
KRPCT/KR2005/002031 | 2005-06-29 | ||
PCT/KR2005/002031 WO2006065010A1 (en) | 2004-12-13 | 2005-06-29 | METHOD FOR MANUFACTURING G a N-BASED LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY |
KR1020050086951A KR20060066618A (en) | 2004-12-13 | 2005-09-16 | Thin gan light emitting diode device |
KR10-2005-0086951 | 2005-09-16 | ||
KR10-2005-0086953 | 2005-09-16 | ||
KR1020050086953A KR100890467B1 (en) | 2004-12-13 | 2005-09-16 | METHOD FOR PRODUCING THIN GaN LIGHT EMITTING DIODE DEVICE |
KR1020050088664A KR20060066620A (en) | 2004-12-13 | 2005-09-23 | Gan light emitting diode device |
KR10-2005-0088664 | 2005-09-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006065046A1 true WO2006065046A1 (en) | 2006-06-22 |
Family
ID=36588069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2005/004247 WO2006065046A1 (en) | 2004-12-13 | 2005-12-13 | Thin gallium nitride light emitting diode device |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2006065046A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008021659A1 (en) | 2008-04-30 | 2009-11-05 | Ledon Lighting Jennersdorf Gmbh | LED element with a thin film semiconductor device based on gallium nitride |
WO2011018380A1 (en) * | 2009-08-10 | 2011-02-17 | Osram Opto Semiconductors Gmbh | Method for producing a light-emitting diode and light-emitting diode |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000101139A (en) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | Semiconductor light-emitting element, manufacture thereof and device using the same |
JP2003031895A (en) * | 2001-07-13 | 2003-01-31 | Sharp Corp | Semiconductor light emitting device and its manufacturing method |
JP2003037286A (en) * | 2001-05-18 | 2003-02-07 | Matsushita Electric Ind Co Ltd | Method of manufacturing semiconductor device |
US6818531B1 (en) * | 2003-06-03 | 2004-11-16 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing vertical GaN light emitting diodes |
-
2005
- 2005-12-13 WO PCT/KR2005/004247 patent/WO2006065046A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000101139A (en) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | Semiconductor light-emitting element, manufacture thereof and device using the same |
JP2003037286A (en) * | 2001-05-18 | 2003-02-07 | Matsushita Electric Ind Co Ltd | Method of manufacturing semiconductor device |
JP2003031895A (en) * | 2001-07-13 | 2003-01-31 | Sharp Corp | Semiconductor light emitting device and its manufacturing method |
US6818531B1 (en) * | 2003-06-03 | 2004-11-16 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing vertical GaN light emitting diodes |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008021659A1 (en) | 2008-04-30 | 2009-11-05 | Ledon Lighting Jennersdorf Gmbh | LED element with a thin film semiconductor device based on gallium nitride |
WO2011018380A1 (en) * | 2009-08-10 | 2011-02-17 | Osram Opto Semiconductors Gmbh | Method for producing a light-emitting diode and light-emitting diode |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20060124941A1 (en) | Thin gallium nitride light emitting diode device | |
KR100890467B1 (en) | METHOD FOR PRODUCING THIN GaN LIGHT EMITTING DIODE DEVICE | |
EP1727218B1 (en) | Method of manufacturing light emitting diodes | |
KR101254539B1 (en) | Vertical structure semiconductor devices | |
US6746889B1 (en) | Optoelectronic device with improved light extraction | |
KR100959079B1 (en) | Light emitting diode device having enhanced heat dissipation and preparation method thereof | |
KR100921457B1 (en) | LED Having Vertical Structure and Method Of Manufacturing The Same | |
US20050104081A1 (en) | Semiconductor light emitting diode and method for manufacturing the same | |
JP5881689B2 (en) | LIGHT EMITTING ELEMENT CHIP AND ITS MANUFACTURING METHOD | |
EP2320482A2 (en) | Highly efficient gallium nitride based light emitting diodes via surface roughening | |
KR20060136293A (en) | Light emitting diode device having enhanced heat dissipation and preparation method thereof | |
KR20080015794A (en) | Ingaaln light-emitting device and manufacturing method thereof | |
KR20070044099A (en) | Nitride-based light emitting diode and manufacturing method of the same | |
JP2011171327A (en) | Light emitting element, method for manufacturing the same, and light emitting device | |
KR100815226B1 (en) | Method of manufacturing gan type light emitting diode device | |
CN111106212A (en) | Deep ultraviolet light-emitting diode with vertical structure and preparation method thereof | |
KR100762003B1 (en) | Method of manufacturing vertically structured nitride type light emitting diode | |
US20040169185A1 (en) | High luminescent light emitting diode | |
KR20050000836A (en) | Method for manufacturing GaN LED | |
WO2005062392A1 (en) | Gan-based led and manufacturing method of the same utilizing the technique of sapphire etching | |
WO2006065046A1 (en) | Thin gallium nitride light emitting diode device | |
KR100934636B1 (en) | Method for light emitting diode device and intermediate therefor | |
KR100497338B1 (en) | Light emitting diode with vertical electrode structure and manufacturing method of the same | |
KR100530986B1 (en) | Light emitting diode having vertical electrode structure, manufacturing method of the same and etching method of sapphire substrate | |
KR20050078661A (en) | Light emitting diode having vertical electrode structure, manufacturing method of the same and etching method of sapphire substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KN KP KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1020067018818 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067018818 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 05822111 Country of ref document: EP Kind code of ref document: A1 |