WO2006061686A3 - A cathodic device - Google Patents

A cathodic device Download PDF

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Publication number
WO2006061686A3
WO2006061686A3 PCT/IB2005/003668 IB2005003668W WO2006061686A3 WO 2006061686 A3 WO2006061686 A3 WO 2006061686A3 IB 2005003668 W IB2005003668 W IB 2005003668W WO 2006061686 A3 WO2006061686 A3 WO 2006061686A3
Authority
WO
WIPO (PCT)
Prior art keywords
type layer
thickness
layer
energy level
negatively charged
Prior art date
Application number
PCT/IB2005/003668
Other languages
French (fr)
Other versions
WO2006061686A2 (en
Inventor
Johan Frans Prins
Original Assignee
Johan Frans Prins
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Johan Frans Prins filed Critical Johan Frans Prins
Publication of WO2006061686A2 publication Critical patent/WO2006061686A2/en
Publication of WO2006061686A3 publication Critical patent/WO2006061686A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of Metal-Insulator-Metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/308—Semiconductor cathodes, e.g. having PN junction layers

Abstract

A method of forming a cathodic device includes the steps of forming a p-type layer (18) and an n-type layer (20) below a surface (20) of a substrate. The material has a conduction band which is at an energy level no more than 0.5 electron-Volts (eV) below the lowest vacuum energy level. The layers are formed so that they are in contact, with the p-type layer located between the surface and the n-type layer, and so that they form a p-n junction. The thickness of the p-type layer is somewhat less than the average distance which an electron injected into the p-type layer travels by diffusion and the thickness of the negatively charged depletion layer in the p-type layer is such that the difference between the thickness of the p-type layer and the thickness of the negatively charged depletion layer in the p-type layer is substantially less than the said average distance.
PCT/IB2005/003668 2004-12-10 2005-12-05 A cathodic device WO2006061686A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA200410019 2004-12-10
ZA2004/10019 2004-12-10

Publications (2)

Publication Number Publication Date
WO2006061686A2 WO2006061686A2 (en) 2006-06-15
WO2006061686A3 true WO2006061686A3 (en) 2006-07-27

Family

ID=36061709

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/003668 WO2006061686A2 (en) 2004-12-10 2005-12-05 A cathodic device

Country Status (1)

Country Link
WO (1) WO2006061686A2 (en)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1147883A (en) * 1965-04-22 1969-04-10 Philips Electronic Associated Improvements in and relating to cathodes for electron tubes
US4040080A (en) * 1976-03-22 1977-08-02 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device
US5334853A (en) * 1993-09-29 1994-08-02 The United States Of America As Represented By The Secretary Of The Navy Semiconductor cold electron emission device
US5838019A (en) * 1986-05-08 1998-11-17 Canon Kabushiki Kaisha Electron emitting element
US5952772A (en) * 1997-02-05 1999-09-14 Smiths Industries Public Limited Company Diamond electron emitter
US20010011972A1 (en) * 1998-07-06 2001-08-09 Long N. Dinh Junction-based field emission structure for field emission display
WO2003019597A1 (en) * 2001-08-31 2003-03-06 Element Six (Pty) Ltd Cathodic device comprising ion-implanted emitted substrate having negative electron affinity
US6538368B1 (en) * 1999-03-06 2003-03-25 Smiths Group Plc Electron-emitting devices
EP1302961A2 (en) * 2001-10-12 2003-04-16 Hewlett-Packard Company Electron emitter
US20040095868A1 (en) * 2002-01-09 2004-05-20 Henryk Birecki Electron emitter device for data storage applications and method of manufacture
US20050133735A1 (en) * 2003-09-30 2005-06-23 Natsuo Tatsumi Electron emitting device

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1147883A (en) * 1965-04-22 1969-04-10 Philips Electronic Associated Improvements in and relating to cathodes for electron tubes
US4040080A (en) * 1976-03-22 1977-08-02 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device
US5838019A (en) * 1986-05-08 1998-11-17 Canon Kabushiki Kaisha Electron emitting element
US5334853A (en) * 1993-09-29 1994-08-02 The United States Of America As Represented By The Secretary Of The Navy Semiconductor cold electron emission device
US5952772A (en) * 1997-02-05 1999-09-14 Smiths Industries Public Limited Company Diamond electron emitter
US20010011972A1 (en) * 1998-07-06 2001-08-09 Long N. Dinh Junction-based field emission structure for field emission display
US6538368B1 (en) * 1999-03-06 2003-03-25 Smiths Group Plc Electron-emitting devices
WO2003019597A1 (en) * 2001-08-31 2003-03-06 Element Six (Pty) Ltd Cathodic device comprising ion-implanted emitted substrate having negative electron affinity
EP1302961A2 (en) * 2001-10-12 2003-04-16 Hewlett-Packard Company Electron emitter
US20040095868A1 (en) * 2002-01-09 2004-05-20 Henryk Birecki Electron emitter device for data storage applications and method of manufacture
US20050133735A1 (en) * 2003-09-30 2005-06-23 Natsuo Tatsumi Electron emitting device

Also Published As

Publication number Publication date
WO2006061686A2 (en) 2006-06-15

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